JP2015026713A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus capable of further suppressing deterioration in performance of an insulating sheet made of a resin.SOLUTION: The semiconductor manufacturing apparatus according to the present invention as a mold structure for resin-sealing a semiconductor set 20 includes: a central mold 10 having an opening 11 vertically penetrating the central mold 10; an upper mold 8 which is used by being superposed on the upper side of the central mold 10 and is provided with, on its lower surface, a recess 9 connected to the opening 11 to form a space; and a lower mold 12 which is used by being superposed on the lower side of the central mold 10 and is provided with, on its upper surface, a recess 13 connected to the opening 11 to form a space.

Description

  The present invention relates to a semiconductor manufacturing apparatus.

  A single-sided cooling type power card is known. Patent Document 1 describes a semiconductor device in which an insulating resin film is formed on a metal layer, a heat sink and a semiconductor chip are disposed on the insulating resin film, and the resin is sealed.

JP 2004-165281 A

  However, in the semiconductor device manufacturing process, if the resinous insulation sheet is placed in the mold during soldering and the soldering is performed, the resin sheet will deteriorate beyond heat resistance and the resin will carbonize. As a result, there is a problem that the insulating property is lost.

  This invention is made | formed in order to solve such a problem, and it aims at providing the semiconductor manufacturing apparatus which can suppress the performance fall of a more resinous insulating sheet.

  The semiconductor manufacturing apparatus according to the present invention is a mold structure for resin-sealing a semiconductor device, and is used by being overlaid on a central mold having a central mold having an opening penetrating vertically. An upper mold provided with a concave portion connected to the opening to form a space on the lower surface and an upper mold provided under the central mold, and a concave portion connected to the opening to form a space were provided on the upper surface. And a lower mold. Thereby, the soldering process can be performed on the semiconductor device without bonding the insulating sheet to the heat sink.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor manufacturing apparatus which can suppress the performance fall of a more resinous insulation sheet can be provided.

It is a figure which shows the metal mold | die and semiconductor device concerning embodiment concerning embodiment. It is a figure which shows the state by which the semiconductor device before resin sealing is installed in the center metal mold | die of the semiconductor device concerning embodiment concerning embodiment. It is a figure which shows the cross section in the case of the bonding process concerning embodiment. It is a figure which shows the center metal mold | die and heat sink concerning embodiment. It is a figure for demonstrating the fixing method of the heat sink concerning embodiment. It is a figure for demonstrating the fixing method of the heat sink concerning embodiment. It is a figure for demonstrating the fixing method of the heat sink concerning embodiment. It is a figure which shows the conventional semiconductor device. 1 is a diagram illustrating a semiconductor device according to an embodiment.

Embodiment Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The present invention relates to a semiconductor device manufacturing apparatus. In order to explain the structure of the present invention, problems of the prior art will be described first.

  In order to release heat when the semiconductor element is energized, the semiconductor element is fixed to a plate-shaped heat sink. In order to improve heat dissipation efficiency, the semiconductor element and the heat sink need to be bonded with solder.

  Since the heat sink is formed of a conductor member, an insulating sheet is bonded to the other surface, which is a surface different from the one surface in close contact with the semiconductor element. The insulating sheet is formed of, for example, a resin having a metal film on the surface that is not bonded to the heat sink.

  As one method, there is conventionally a processing method in which a step of closely attaching an insulating sheet is performed after the resin sealing process of the semiconductor element is finished. However, when this process is present, a resin sheet thermocompression process is required separately from the resin sealing process, and there is a problem that both the equipment cost and the processing cost are increased.

  In addition, if the insulating sheet is bonded to the heat sink after the soldering process between the semiconductor element and the heat sink, the semiconductor element or wire bonding on the heat sink becomes an obstacle, and the heat sink is uniformly applied in a plane parallel to the insulating sheet. I can't press. Therefore, the insulating sheet and the heat sink cannot be bonded uniformly.

  On the other hand, a resin sheet is placed in a mold before resin sealing, and a semiconductor element, an electrode substrate, etc. for sealing treatment are placed on the resin sheet, and the components in the mold are sealed with resin at once. In the processing method of stopping, as described above, the resin sheet may be carbonized by processing such as soldering, and the insulation may be lost.

  FIG. 1A is an exploded cross-sectional view of the mold according to the embodiment and the semiconductor set 20 before resin sealing. FIG. 1B is a view showing a cross section of the resin-sealed semiconductor device 2. FIG. 1C is a view showing a cross section of the semiconductor device 2 removed from the mold.

  The semiconductor manufacturing apparatus 1 according to the present embodiment includes an upper mold 8, a central mold 10, and a lower mold 12. Note that a structure including a semiconductor element before resin sealing is referred to as a semiconductor set 20, and a structure including a semiconductor element after resin sealing is referred to as a semiconductor device 2.

  The upper mold 8 has a recess 9 in the center of the surface facing the central mold 10 for resin sealing. The central mold 10 has an opening 11. Thereby, the bottom part of the heat sink 21 is opened. The lower mold 12 has a recess 13 on the surface facing the central mold 10. An insulating sheet 28 is installed at the center of the recess 13 and bonded to the bottom surface of the heat sink 21.

  The recess 9 of the upper mold 8, the opening 11 of the central mold 10, and the recess 13 of the lower mold 12 form a space for resin sealing of the semiconductor set 20.

  FIG. 2 is a diagram illustrating a top view and a cross-sectional view taken along line BB ′ in a state where the semiconductor set 20 before resin sealing is installed in the central mold 10 of the semiconductor device according to the embodiment. .

  The central mold 10 has an opening 11 and the bottom surface portion of the heat sink 21 is open. The semiconductor set 20 includes a heat sink 21 integrated with electrodes, a control terminal 22, semiconductor elements 24 and 25, connection pads 26, and bonding wires 27. The semiconductor elements 24 and 25 are bonded onto the heat sink 21 by a method such as solder bonding.

  In the semiconductor device manufacturing apparatus according to the present embodiment, the semiconductor set 20 is fitted into the opening 11 of the central mold 10. Conventionally, when the semiconductor elements 24 and 25 are solder-bonded to the heat sink 21, it is necessary to install the insulating sheet 28 in the mold in advance, and there is a risk that the insulating performance of the insulating sheet 28 may be lowered by the heat of soldering. there were.

  In the present embodiment, since the central mold 10 and the lower mold 12 are divided, the insulating sheet 28 can be bonded to the heat sink 21 after soldering. Therefore, it is possible to suppress a decrease in the insulating performance of the insulating sheet 28.

  Next, how to fix the heat sink 21 and the control terminal 22 when the semiconductor set 20 is arranged in the central mold 10 will be described. FIG. 3 is a diagram showing a cross section during the bonding process. The central mold 10 and the heat sink 21 are disposed on the support base 30. The support base 30 has an end portion on the heat sink side of the control terminal 22, and has a terminal support portion 31 for supporting a portion protruding from the central mold 10. Thereby, the ultrasonic vibration from the tool 32 at the time of bonding is stably propagated to the control terminal 22, and the bonding quality of the bonding process can be further improved.

  Further, since the lower mold 12 and the central mold 10 are divided, the amount of heat of the mold is smaller than the structure in which the lower mold 12 and the central mold 10 are integrated. Thereby, in the process of soldering the semiconductor elements 24 and 25, etc., it is possible to heat to the soldering temperature with a little heating energy.

  Moreover, since the heat sink 21 can be directly heated by infrared rays, laser light, a heater, etc., temperature can be raised rapidly and the soldering processing time can be shortened more.

  Further, when inspecting the solder for joining the semiconductor elements 24 and 25 and the heat sink 21, since there is no lower mold 12, it is possible to inspect with weaker X-rays.

  Next, a structure for fixing the heat sink 21 to the central mold 10 will be described. FIG. 4 is a diagram illustrating a top view of the central mold 10 and the heat sink 21 according to the embodiment and a cross section along the line DD ′. As shown in the drawing, if the heat sink 21 is arranged as it is in the central mold 10, the heat sink 21 may rotate.

  5-7 is a figure for demonstrating the fixing method of the heat sink 21. As shown in FIG. 5 to 7 show a top surface and a cross section of the central mold 10 and the heat sink 21, respectively. Note that the methods described below are merely examples, and the implementation is not limited to these methods.

  In the method shown in FIG. 5, the fixing member 34 is further stacked on the portion where the heat sink 21 overlaps the central mold 10 to fix the heat sink 21. The shape of the fixing member 34 is not limited to a rectangular parallelepiped.

  FIG. 6 shows a method of fixing the heat sink 21 by pressing it in the lateral direction of the central mold 10 with the support pins 35. In FIG. 7, a support portion 211 is provided on the heat sink 21 so that the heat sink 21 is disposed on the central mold 10.

  In the embodiment, after the semiconductor elements 24 and 25 and the heat sink 21 are joined with solder, the heat sink 21 and the insulating sheet 28 are sealed at once with the sealing resin 40. Therefore, for example, there is no need to further heat-press the semiconductor elements 24 and 25 and the resin-sealed heat sink 21 to bond the insulating sheet 28, and the processing process can be further simplified. Further, since the heat sink 21 and the insulating sheet 28 are resin-sealed at once, the insulating sheet 28 is uniformly bonded to the bottom surface of the heat sink 21.

  Next, effects of the semiconductor device according to the embodiment will be further described. The semiconductor device 2 is disposed and used on the upper surface of the cooler 41. The cooler 41 has a refrigerant 411 inside, and cools the semiconductor device 2.

  First, the conventional semiconductor device 100 will be described. FIG. 8A shows the semiconductor device 100 before the lead frame 43 is diver cut. The semiconductor device 100 is resin-sealed after connecting the control terminal 122 which is a part of the lead frame 43 and the connection pad 26. Then, an unnecessary portion of the lead frame 43, that is, a fixed portion outside the sealing resin 40, and the like are cut with a diver.

  FIG. 8B shows a top view of the semiconductor device 100 after the diver cut. FIG. 8C shows a cross-sectional view taken along the line II ′ of FIG. FIG. 8D is a diagram showing a partially enlarged view of the cross section of the semiconductor device 100. The semiconductor device 100 has a structure in which an end portion 431 that protrudes from the outer peripheral portion of the sealing resin 40 and remains as a cut mark of the lead frame 43 remains.

  Since the heat sink 21 has a high voltage, it is necessary to insulate it from external structures such as the cooler 41. For insulation, the distance between the cooler 41 and the end portion 431 of the lead frame 43 shown by the arrow in FIG. 8D must be increased, and therefore the heat sink 21 thickness is increased. Was necessary. Therefore, in the semiconductor device 100, it has been difficult to reduce the size of the semiconductor device 100 in order to secure an insulation distance.

  On the other hand, since the heat sink 21 and the insulating sheet 28 are bonded to each other in the semiconductor device 2 according to the present embodiment, the discharge path reaching the cooler 41 from the heat sink 21 via the insulating sheet 28 is the insulating sheet 28. It is insulated by. Therefore, the semiconductor device 2 can be made smaller regardless of the insulation distance between the heat sink 21 and the cooler 41.

  FIG. 9A shows a top view of the semiconductor device 2. FIG. 8B is a sectional view taken along line JJ ′ of FIG. FIG. 9C is a diagram showing a partially enlarged view of the cross section of the semiconductor device 2. As shown in FIG. 9, the semiconductor device 2 has no portion protruding from the sealing resin 40 other than the control terminal 22, so it is not necessary to secure an insulation distance, and the thickness of the semiconductor device 2 can be further reduced. It is.

  Note that the present invention is not limited to the above-described embodiment, and can be changed as appropriate without departing from the spirit of the present invention.

DESCRIPTION OF SYMBOLS 1 Semiconductor device 8 Upper die 9 Recess 10 Central die 11 Opening 12 Lower die 13 Recess 20 Semiconductor set 21 Heat sink 22 Control terminal 24, 25 Semiconductor element 26 Connection pad 27 Bonding wire 28 Insulating sheet 30 Support base 31 Terminal support Part 32 Tool 34 Fixing member 35 Support pin 40 Sealing resin 41 Cooler 411 Refrigerant 43 Lead frame 211 Support part 100 Semiconductor device 122 Control terminal 431 End

Claims (1)

A mold structure for resin-sealing a semiconductor device,
A central mold having an opening penetrating the top and bottom;
An upper mold provided on the lower surface with a recess that is used by being superimposed on the central mold and connected to the opening to form a space;
A semiconductor manufacturing apparatus, comprising: a lower mold that is used by being overlapped under the central mold and is provided with a concave portion connected to the opening to form a space on an upper surface.

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