JP2015014578A5 - - Google Patents
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- JP2015014578A5 JP2015014578A5 JP2013142746A JP2013142746A JP2015014578A5 JP 2015014578 A5 JP2015014578 A5 JP 2015014578A5 JP 2013142746 A JP2013142746 A JP 2013142746A JP 2013142746 A JP2013142746 A JP 2013142746A JP 2015014578 A5 JP2015014578 A5 JP 2015014578A5
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- JP
- Japan
- Prior art keywords
- semiconductor chip
- adhesive
- flow sensor
- support substrate
- diaphragm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 33
- 239000000853 adhesive Substances 0.000 claims 27
- 230000001070 adhesive Effects 0.000 claims 25
- 230000002093 peripheral Effects 0.000 claims 21
- 239000000758 substrate Substances 0.000 claims 19
- 238000001514 detection method Methods 0.000 claims 10
- 239000011347 resin Substances 0.000 claims 10
- 229920005989 resin Polymers 0.000 claims 10
- 230000000875 corresponding Effects 0.000 claims 7
- 230000015572 biosynthetic process Effects 0.000 claims 5
- 238000005755 formation reaction Methods 0.000 claims 5
- 239000010419 fine particle Substances 0.000 claims 1
- 239000011859 microparticle Substances 0.000 claims 1
- 230000002265 prevention Effects 0.000 claims 1
Claims (20)
前記支持基板上に搭載され、流量検出部が形成された主面と前記主面に対向する裏面とを有し、前記裏面に凹部が形成され、前記主面における前記凹部上にダイヤフラムが形成された半導体チップと、
前記流量検出部を露出して前記半導体チップの前記主面および前記半導体チップの周側面を覆う樹脂と、
前記半導体チップの前記裏面における少なくとも前記ダイヤフラム周辺領域と前記ダイヤフラム周辺領域に対応する前記支持基板との間に設けられ、前記半導体チップと前記支持基板とを接着する接着剤と、
前記半導体チップの前記裏面、前記支持基板の上面、または前記半導体チップの前記裏面と前記支持基板の前記上面との間の少なくともいずれかに設けられた、前記接着剤が流動する接着剤流動構造と、を備える流量センサ。 A support substrate;
Mounted on the support substrate, having a main surface on which a flow rate detection unit is formed and a back surface opposite to the main surface, a recess is formed on the back surface, and a diaphragm is formed on the recess on the main surface A semiconductor chip,
A resin that exposes the flow rate detection unit and covers the main surface of the semiconductor chip and the peripheral side surface of the semiconductor chip;
An adhesive that is provided between at least the diaphragm peripheral region and the support substrate corresponding to the diaphragm peripheral region on the back surface of the semiconductor chip, and bonds the semiconductor chip and the support substrate;
An adhesive flow structure in which the adhesive flows, provided on at least one of the back surface of the semiconductor chip, the top surface of the support substrate, or the back surface of the semiconductor chip and the top surface of the support substrate; A flow sensor comprising:
前記接着剤流動構造は、前記支持基板の上面に設けられた溝部を備える、流量センサ。 The flow sensor according to claim 1,
The adhesive flow structure is a flow sensor including a groove provided on an upper surface of the support substrate.
前記溝部内に、前記接着剤の一部が流動して収容されている、流量センサ。 The flow sensor according to claim 2,
A flow sensor in which a part of the adhesive flows and is accommodated in the groove.
前記溝部は、前記半導体チップの少なくとも一側面の内側から前記一側面の外側に亘って設けられている、流量センサ。 The flow sensor according to claim 3,
The groove portion is a flow rate sensor provided from the inner side of at least one side surface of the semiconductor chip to the outer side of the one side surface.
前記溝部は、前記半導体チップの周側面に沿って、前記周側面の内側から前記周側面の外側に亘って設けられている、流量センサ。 The flow sensor according to claim 4, wherein
The groove portion is a flow sensor provided along the peripheral side surface of the semiconductor chip from the inside of the peripheral side surface to the outside of the peripheral side surface.
前記接着剤流動構造は、前記半導体チップの前記裏面に設けられた溝部を備える、流量センサ。 The flow sensor according to claim 1,
The adhesive flow structure is a flow sensor including a groove provided in the back surface of the semiconductor chip.
前記溝部内に、前記接着剤の一部が流動して収容されている、流量センサ。 The flow sensor according to claim 6, wherein
A flow sensor in which a part of the adhesive flows and is accommodated in the groove.
前記溝部は、前記半導体チップの前記裏面における前記半導体チップの周側面の内側に設けられている、流量センサ。 The flow sensor according to claim 7,
The groove portion is a flow rate sensor provided on the inner side of the peripheral side surface of the semiconductor chip on the back surface of the semiconductor chip.
前記接着剤流動構造は、前記ダイヤフラム周辺領域に設けられた前記接着剤の外方に設けられた、前記接着剤の空隙部を含む、流量センサ。 The flow sensor according to claim 1,
The adhesive flow structure includes a gap portion of the adhesive provided outside the adhesive provided in a peripheral area of the diaphragm.
前記接着剤の空隙部内に、前記接着剤の一部が流動して収容されている、流量センサ。 The flow sensor according to claim 9,
A flow rate sensor in which a part of the adhesive flows and is accommodated in the gap of the adhesive.
前記接着剤の空隙部は、前記半導体チップの少なくとも一側面の内側から前記一側面の外側に亘って設けられている、流量センサ。 The flow sensor according to claim 9,
The gap portion of the adhesive is a flow sensor provided from the inside of at least one side surface of the semiconductor chip to the outside of the one side surface.
前記接着剤流動構造は、前記ダイヤフラム周辺領域に対応して形成された前記接着剤と、前記ダイヤフラム周辺領域の外方に設けられ、前記接着剤とはヤング率が異なる第２の接着剤とを含む、流量センサ。 The flow sensor according to claim 1,
The adhesive flow structure includes the adhesive formed corresponding to the diaphragm peripheral region and a second adhesive having a Young's modulus different from that of the adhesive provided outside the diaphragm peripheral region. Including flow sensor.
前記第２の接着剤は、前記ダイヤフラム周辺領域に対応して形成された前記接着剤よりもヤング率が低い、流量センサ。 The flow sensor according to claim 12,
The flow rate sensor, wherein the second adhesive has a Young's modulus lower than that of the adhesive formed corresponding to the diaphragm peripheral region.
前記支持基板上に搭載され、流量検出部が形成された主面と前記主面に対向する裏面とを有し、前記裏面に凹部が形成され、前記主面における前記凹部上にダイヤフラムが形成された半導体チップと、
前記流量検出部を露出して前記半導体チップの前記主面および前記半導体チップの周側面を覆う樹脂と、
前記半導体チップの前記裏面における少なくとも前記ダイヤフラム周辺領域と前記ダイヤフラム周辺領域に対応する前記支持基板との間に設けられ、前記半導体チップと前記支持基板とを接着する接着剤と、を備え、
前記樹脂は、前記流量検出部を露出する第１の樹脂非形成領域と、前記第１の樹脂非形成領域から離間する位置において、前記半導体チップの前記主面の一部を露出する少なくとも１つの第２の樹脂非形成領域とを備える、流量センサ。 A support substrate;
Mounted on the support substrate, having a main surface on which a flow rate detection unit is formed and a back surface opposite to the main surface, a recess is formed on the back surface, and a diaphragm is formed on the recess on the main surface A semiconductor chip,
A resin that exposes the flow rate detection unit and covers the main surface of the semiconductor chip and the peripheral side surface of the semiconductor chip;
An adhesive that is provided between at least the diaphragm peripheral region on the back surface of the semiconductor chip and the support substrate corresponding to the diaphragm peripheral region, and bonds the semiconductor chip and the support substrate;
The resin has at least one of a first resin non-formation region that exposes the flow rate detection unit and at least one part of the main surface of the semiconductor chip that is spaced from the first resin non-formation region. A flow sensor comprising a second resin non-formation region.
さらに接続用リードを備え、前記接続用リードの一端は、少なくとも前記第２の樹脂非形成領域よりも前記第１の樹脂非形成領域の近傍で前記半導体チップに接続されている、流量センサ。 The flow sensor according to claim 14,
A flow sensor further comprising a connection lead, wherein one end of the connection lead is connected to the semiconductor chip at least in the vicinity of the first resin non-formation region rather than the second resin non-formation region.
前記支持基板上に搭載され、流量検出部が形成された主面と前記主面に対向する裏面とを有し、前記裏面に凹部が形成され、前記主面における前記凹部上にダイヤフラムが形成された半導体チップと、
前記流量検出部を露出して前記半導体チップの前記主面および前記半導体チップの周側面を覆う樹脂と、
前記半導体チップの前記裏面における少なくとも前記ダイヤフラム周辺領域と前記ダイヤフラム周辺領域に対応する前記支持基板との間に設けられ、前記半導体チップと前記支持基板とを接着する接着剤層と、を備え、
前記接着剤層は、接着剤と、前記接着剤中に分散された微粒子とを含む、流量センサ。 A support substrate;
Mounted on the support substrate, having a main surface on which a flow rate detection unit is formed and a back surface opposite to the main surface, a recess is formed on the back surface, and a diaphragm is formed on the recess on the main surface A semiconductor chip,
A resin that exposes the flow rate detection unit and covers the main surface of the semiconductor chip and the peripheral side surface of the semiconductor chip;
An adhesive layer provided between at least the diaphragm peripheral region on the back surface of the semiconductor chip and the support substrate corresponding to the diaphragm peripheral region, and bonding the semiconductor chip and the support substrate;
The said adhesive bond layer is a flow sensor containing an adhesive agent and the microparticles | fine-particles disperse | distributed in the said adhesive agent.
さらに、前記流量検出部を制御する制御回路部を備える、流量センサ。 The flow sensor according to any one of claims 1 to 16,
Furthermore, a flow sensor provided with the control circuit part which controls the said flow volume detection part.
前記制御回路部は前記半導体チップに形成されている、流量センサ。 The flow sensor according to claim 17,
The control circuit unit is a flow sensor formed in the semiconductor chip.
前記制御回路部を有する制御用半導体チップを備える、流量センサ。 The flow sensor according to claim 17,
A flow sensor comprising a control semiconductor chip having the control circuit unit.
前記支持基板上に搭載され、流量検出部が形成された主面と前記主面に対向する裏面とを有し、前記裏面側に凹部が形成され、前記主面側における前記凹部上にダイヤフラムが形成された半導体チップと、
前記流量検出部を露出して前記半導体チップの前記主面および前記半導体チップの周側面を覆う樹脂と、
前記半導体チップの前記裏面における少なくとも前記ダイヤフラム周辺領域と前記ダイヤフラム周辺領域に対応する前記支持基板との間に設けられ、前記半導体チップと前記支持基板とを接着する接着剤と、備え、
前記ダイヤフラム周辺領域に対応する前記接着剤の領域が押し潰されることにより前記半導体チップに生じる変形を防ぐため、前記接着剤の局所的な潰れを防止する潰れ防止機構を備える、流量センサ。 A support substrate;
Mounted on the support substrate, having a main surface on which a flow rate detection unit is formed and a back surface facing the main surface, a recess is formed on the back surface side, and a diaphragm is formed on the recess on the main surface side A formed semiconductor chip; and
A resin that exposes the flow rate detection unit and covers the main surface of the semiconductor chip and the peripheral side surface of the semiconductor chip;
An adhesive that is provided between at least the diaphragm peripheral region on the back surface of the semiconductor chip and the support substrate corresponding to the diaphragm peripheral region, and bonds the semiconductor chip and the support substrate;
A flow sensor comprising a crush prevention mechanism for preventing local crushing of the adhesive in order to prevent deformation of the semiconductor chip caused by crushing the area of the adhesive corresponding to the peripheral area of the diaphragm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013142746A JP6067498B2 (en) | 2013-07-08 | 2013-07-08 | Flow sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013142746A JP6067498B2 (en) | 2013-07-08 | 2013-07-08 | Flow sensor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015014578A JP2015014578A (en) | 2015-01-22 |
| JP2015014578A5 true JP2015014578A5 (en) | 2016-03-03 |
| JP6067498B2 JP6067498B2 (en) | 2017-01-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013142746A Active JP6067498B2 (en) | 2013-07-08 | 2013-07-08 | Flow sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6067498B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7117885B2 (en) * | 2018-04-10 | 2022-08-15 | 株式会社日立ハイテク | semiconductor equipment |
| JP6905962B2 (en) * | 2018-07-12 | 2021-07-21 | 日立Astemo株式会社 | Flow sensor |
| JP7127441B2 (en) * | 2018-09-06 | 2022-08-30 | 株式会社デンソー | Physical quantity measuring device and flow rate measuring device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3514666B2 (en) * | 1999-06-30 | 2004-03-31 | 株式会社日立製作所 | Thermal air flow sensor |
| JP4281630B2 (en) * | 2004-06-18 | 2009-06-17 | 株式会社デンソー | Manufacturing method of sensor device |
| JP4894669B2 (en) * | 2007-08-01 | 2012-03-14 | 株式会社デンソー | Sensor device and manufacturing method thereof |
| JP5012330B2 (en) * | 2007-08-29 | 2012-08-29 | 株式会社デンソー | Manufacturing method of sensor device and sensor device |
| JP2009162695A (en) * | 2008-01-09 | 2009-07-23 | Denso Corp | Mounting structure of air flow detection chip |
| JP5220955B2 (en) * | 2010-10-13 | 2013-06-26 | 日立オートモティブシステムズ株式会社 | Flow sensor |
| WO2012049742A1 (en) * | 2010-10-13 | 2012-04-19 | 日立オートモティブシステムズ株式会社 | Flow sensor and production method therefor, and flow sensor module and production method therefor |
| JP5456815B2 (en) * | 2010-10-13 | 2014-04-02 | 日立オートモティブシステムズ株式会社 | Flow sensor and manufacturing method thereof |
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