JP2015008074A - Semiconductor type light source of vehicular lamp fitting and vehicular lamp fitting - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently radiate heat generated by an LED chip to the exterior.SOLUTION: The invention includes: an LED chip 3; a package member 4 on which the LED chip 3 is mounted; a power supply member 5 which supplies an electric current to the LED chip 3; a heat radiation member 6 equipped with the package member 4 and the power supply member 5; and a heat diffusion transmission member 7 which is disposed between the package member 4 and the heat radiation member 6 and transmits heat generated by the LED chip 3 from the package member 4 to the heat radiation member 6 while diffusing the heat. Consequently, the invention efficiently radiates the heat generated by the LED chip 3 to the exterior.

Description

  The present invention relates to a semiconductor-type light source for a vehicular lamp. The present invention also relates to a vehicular lamp including a semiconductor light source and a light distribution control member.

  Conventionally, this type of semiconductor light source is used (for example, Patent Document 1, Patent Document 2, and Patent Document 3). A conventional semiconductor-type light source is formed by mounting an LED chip on a ceramic substrate. By supplying current to the LED chip, the LED chip emits light. Then, the light is used as illumination light, signal light, decoration light, or the like via a vehicle lamp. Here, when current is supplied to the LED chip and the LED chip emits light, heat is generated in the LED chip.

JP 2008-16362 A JP 2010-55897 A JP 2011-187451 A

  In such a vehicular lamp, in order to improve the light emission efficiency of the LED chip, it is important to efficiently radiate the heat generated in the LED chip to the outside.

  The problem to be solved by the present invention is that it is important to efficiently radiate the heat generated in the LED chip to the outside.

  The present invention (the invention according to claim 1) is equipped with a semiconductor light emitting device, a package member on which the semiconductor light emitting device is mounted, a power supply member that supplies current to the semiconductor light emitting device, a package member, and a power supply member. A heat radiating member that is interposed between the package member and the heat radiating member and transmits heat generated in the semiconductor light emitting element while diffusing from the package member to the heat radiating member. It is characterized by.

  In the present invention (the invention according to claim 2), the package member, the heat diffusion transfer member, and the heat radiating member are arranged in the lateral direction or substantially lateral direction, or the package member is directed downward in the gravity direction. It is characterized by that.

  This invention (the invention according to claim 3) is characterized in that the semiconductor light emitting element is composed of a plurality of light emitting layers laminated in the light emitting direction.

  This invention (the invention according to claim 4) is characterized in that the package member is composed of a fluorescent member that converts the wavelength of light emitted from the semiconductor light emitting element into a different wavelength.

  The present invention (the invention according to claim 5) is a semiconductor-type light source for a vehicle lamp according to any one of claims 1 to 4, and a light distribution control for controlling light distribution from the semiconductor-type light source. And a member.

  The semiconductor-type light source of the vehicle lamp according to the present invention and the vehicle lamp according to the present invention are configured such that heat generated in the semiconductor light emitting element is transferred from the package member to the heat dissipation member by the heat diffusion transmission member between the package member and the heat dissipation member. Can be transmitted while being diffused. That is, the heat generated in the semiconductor light emitting element is efficiently transmitted from the package member to the heat dissipation member via the heat diffusion transmission member, and is efficiently radiated from the heat dissipation member to the outside. For this reason, the heat generated in the semiconductor light emitting device can be efficiently radiated to the outside. Thereby, the luminous efficiency of the semiconductor light emitting device can be improved. That is, strong light is obtained.

FIG. 1 is a schematic explanatory view of a vehicular lamp showing an embodiment of a semiconductor light source of a vehicular lamp according to the present invention and an embodiment of a vehicular lamp according to the present invention. FIG. 2 is a bottom view showing the semiconductor light source of the vehicular lamp (a view taken in the direction of arrow II in FIG. 1). FIG. 3 is a cross-sectional view (a cross-sectional view taken along the line III-III in FIG. 2) showing the semiconductor-type light source of the vehicular lamp. FIG. 4 is an explanatory view showing an LED chip. FIG. 5 is a cross-sectional view showing the heat diffusion transfer member. FIG. 6 is a partially enlarged cross-sectional view showing a heat diffusion transmission member.

  DESCRIPTION OF EMBODIMENTS Hereinafter, an embodiment (Example) of a semiconductor-type light source for a vehicle lamp according to the present invention and an example of an embodiment (Example) of a vehicle lamp according to the present invention will be described in detail with reference to the drawings. In addition, this invention is not limited by this embodiment. In this specification, front, rear, upper, lower, left, and right are the front, rear, and upper when a vehicle is equipped with the semiconductor-type light source of the vehicle lamp according to the present invention and the vehicle lamp according to the present invention. , Down, left, right.

(Description of Configuration of Embodiment)
Hereinafter, the semiconductor light source of the vehicle lamp in this embodiment and the configuration of the vehicle lamp in this embodiment will be described. 1-3, the code | symbol 1 is a semiconductor type light source of the vehicle lamp in this embodiment. In FIG. 1, reference numeral 100 denotes a vehicular lamp in this embodiment.

(Description of vehicle lamp 100)
The vehicle lamp 100 is, for example, a headlamp for an automotive headlamp. The vehicular lamp 100 is mounted on both the left and right sides of the front portion of the vehicle. The vehicular lamp 100 includes a lamp housing (not shown), a lamp lens (not shown), the semiconductor light source 1, and a light distribution control member 2.

  The lamp housing and the lamp lens (for example, a transparent outer lens) define a lamp chamber (not shown). The semiconductor light source 1 and the light distribution control member 2 constitute a lamp unit. The lamp units 1 and 2 are disposed in the lamp chamber, and the lamp housing is arranged via an optical axis adjustment mechanism for vertical direction (not shown) and an optical axis adjustment mechanism for horizontal direction (not shown). Is attached.

(Description of the light distribution control member 2)
The light distribution control member 2 controls the light distribution of the light from the semiconductor-type light source 1 (see the solid line arrow in FIG. 1), and includes a reflector 20 and an optical lens 21. . The reflector 20 is provided with a reflecting surface 22. The reflection surface 22 reflects light from the semiconductor light source 1 toward the optical lens 21. The optical lens 21 irradiates the front of the vehicle with the reflected light from the reflecting surface 22 as a predetermined light distribution pattern. In this example, the predetermined light distribution pattern is a low beam light distribution pattern (passing light distribution pattern) or a high beam light distribution pattern (traveling light distribution pattern).

(Description of the semiconductor-type light source 1)
The semiconductor light source 1 includes an LED chip 3 as a semiconductor light emitting element, a package member 4 on which the LED chip 3 is mounted, a power supply member 5 for supplying current to the LED chip 3, the package member 4 and A heat dissipating member (heat sink member) 6 equipped with the power supply member 5 and a heat diffusion transfer member 7 interposed between the package member 4 and the heat dissipating member 6 are provided.

  The semiconductor light source 1 is disposed on the upper side with respect to the reflector 20. The semiconductor-type light source 1 is disposed behind the optical lens 21 together with the reflector 20.

(Description of LED chip 3)
In this example, the LED chip 3 emits blue light. As shown in FIG. 4, the LED chip 3 is a flip chip mounting type (face-down type) LED chip. The LED chip 3 includes a P electrode 30 (made of a metal such as gold) as a first electrode, a current diffusion layer (P-type GaN layer) 33, and a P-type semiconductor layer (P-type InGaN) as a first semiconductor layer. Layer or P-type GaN layer) 34, a first light emitting layer (MQW, that is, an InGaN stacked portion having a slightly different composition in a multiple quantum well structure) 351, and an intermediate layer (InGaN layer or GaN layer) 39. A second light emitting layer (MQW, that is, an InGaN stacked portion having a slightly different composition in a multiple quantum well structure) 352, an N-type semiconductor layer (N-type GaN layer) 36 as a second semiconductor layer, and a second electrode And an N electrode 37 (made of metal such as gold) and a reinforcing transparent support layer (transparent sapphire substrate such as Al 2 O 3 or sapphire) 38. The current diffusion layer 33 and the P-type semiconductor layer 34 may be used in combination.

  The first light emitting layer 351 is formed on one surface (lower surface) of the P-type semiconductor layer 34. The P electrode 30 is formed on the other surface (the surface opposite to the first light emitting layer 351, the upper surface) of the P-type semiconductor layer 34 via the current diffusion layer 33. The intermediate layer 39 is formed on one surface of the first light emitting layer 351 (the surface opposite to the P-type semiconductor layer 34, the lower surface). The second light emitting layer 352 is formed on one surface of the intermediate layer 39 (the surface opposite to the first light emitting layer 351, the lower surface). The N-type semiconductor layer 36 is formed on one surface of the second light emitting layer 352 (a surface opposite to the intermediate layer 39, a lower surface). The transparent support layer 38 is formed on one surface of the N-type semiconductor layer 36 (surface opposite to the second light emitting layer 352, lower surface).

  The N-type semiconductor layer 36 and a part of the transparent support layer 38 include the P electrode 30, the current diffusion layer 33, the P-type semiconductor layer 34, the first light emitting layer 351, the intermediate layer 39, and the second layer. The light emitting layer 352 protrudes in a direction intersecting (orthogonal or almost orthogonal) with respect to the stacking direction of the light emitting layer 352. That is, a part of the current diffusion layer 33, the P-type semiconductor layer 34, the first light-emitting layer 351, the intermediate layer 39, and the second light-emitting layer 352 are removed, and the protrusion of the N-type semiconductor layer 36 is performed. The part is exposed. The N electrode 37 is formed on the exposed surface (the surface opposite to the transparent support layer 38 and on the second light emitting layer 352 side) of the protrusion of the N-type semiconductor layer 36. Note that there is a step between the junction surface between the second light emitting layer 352 and the N-type semiconductor layer 36 and the exposed surface of the protruding portion of the N-type semiconductor layer 36.

  The LED chip 3 of the flip chip mounting type has a light emitting surface located on the side opposite to the P electrode 30. For this purpose, a layer having a high reflectance such as silver (Ag) is preferably formed on the current diffusion layer 33 side of the P electrode 30 of the LED chip 3.

(Description of the package member 4)
The package member 4 includes a substrate 40, a frame body 42, a fluorescent member 43, and wiring patterns 44 and 45. The LED chip 3 is mounted on the package member 4.

  The substrate 40 is made of, for example, a ceramic (AlN) plate. On the one surface (lower surface) of the substrate 40, the wiring patterns 44 and 45 are formed (mounted) by, for example, gold. The P electrode 30 on the light emitting layer side of the LED chip 3 is bonded to the wiring pattern 44 of the substrate 40 via metal bumps (metal bumps such as gold) 80 as a metal bonding material. Further, the N electrode 37 of the LED chip 3 is bonded to the wiring pattern 45 of the substrate 40 via metal bumps (metal bumps such as gold) 81 as a metal bonding material.

  The frame body 42 is bonded to one surface of the substrate 40. The frame body 42 surrounds the LED chip 3. The frame 42 is made of a highly reflective member (for example, a resin containing a highly reflective material such as titanium oxide, ceramic, or a combination thereof). The inner peripheral surface of the frame body 42 forms a vertical surface. In addition, the inner peripheral surface of the frame body 42 is inclined to reflect the light from the LED chip 3 to the open side of the frame body 42 (the side opposite to the side closed by the substrate 40). Also good.

  The frame member 42 is filled with the fluorescent member 43. The LED chip 3 is sealed with the fluorescent member 43. In this example, the fluorescent member 43 is a liquid silicone resin containing yellow light-emitting phosphor particles, and is applied to the frame body 42 and cured. The fluorescent member 43 is excited by the blue light from the LED chip 3 to emit, for example, yellow light, and is mixed with the blue light from the LED chip 3 to become white light. That is, the fluorescent member 43 converts the wavelength of light emitted from the LED chip 3 into a different wavelength. Many other combinations are possible. For example, an LED chip that emits ultraviolet light and phosphors (three types) that emit red, blue, and green may be combined.

(Description of power supply member 5)
The power feeding member 5 holds the package member 4 on the heat radiating member 6 and supplies current to the LED chip 3. The power supply member 5 includes the wiring patterns (pattern wiring portion, made of metal such as gold) 50 and 51, terminals (terminals) 52 and 53, external lead wires 54 and 55, a holder 56, and a pressing plate 57. And a screw 58.

  The terminals 52 and 53 are made of a conductive member. The terminals 52 and 53 and the external lead wires 54 and 55 are electrically connected. The external lead wires 54 and 55 are electrically connected to a power source (battery) (not shown) via a connector or the like (not shown).

  The holder 56 is made of an insulating member. The thickness of the holder 56 is substantially equal to the thickness of the substrate 40. The size of the holder 56 in a top view (bottom view) is larger than that in the top view (bottom view) of the substrate 40. An opening surrounding the substrate 40 is provided at the center of the holder 56.

  The pressing plate 57 is composed of a spring plate. Two pressing plates 57 are provided on both long sides of the opening of the holder 56. One end of the pressing plate 57 is embedded in the inner wall of the opening of the holder 56. The other end of the pressing plate 57 protrudes from the inner wall of the opening of the holder 56 into the opening.

(Description of heat dissipation member 6)
The heat radiating member 6 is made of a material having high thermal conductivity such as resin or metal die casting (aluminum die casting). The heat dissipation member 6 includes a fixed plate portion 60 and a plurality of fin portions 61 provided integrally from one surface (upper surface) of the fixed plate portion 60.

  The package member 4 and the power supply member 5 are provided on the other surface (lower surface) of the fixed plate portion 60 via the heat diffusion transmission member 7. That is, the heat diffusion transmission member 7 is placed on the fixed plate portion 60. The package member 4 and the power supply member 5 are placed on the heat diffusion transfer member 7 in a state where the package member 4 is disposed in the opening of the holder 56. The pressing plate 57 is brought into contact with the substrate 40. The terminals 52 and 53 are placed on the substrate 40 and the holder 56.

  Screws 62 and 63 are screwed into the fixed plate portion 60 through the terminals 52 and 53, the holder 56, and the heat diffusion transmission member 7. Accordingly, the terminals 52 and 53, the holder 56, and the heat diffusion transmission member 7 are fixed to the fixing plate portion 60. The substrate 40 is pressed against the heat diffusion transfer member 7 by the terminals 52 and 53 and the pressing plate 57. As a result, the package member 4 and the power supply member 5 are mounted on the heat dissipation member 6 via the heat diffusion transmission member 7.

(Description of heat diffusion transfer member 7)
As shown in FIGS. 5 and 6, the heat diffusion transfer member 7 includes an upper plate 70, a lower plate 71, a mesh plate 72, and a refrigerant 73. In FIG. 3, a part (intermediate part) of the heat diffusion transfer member 7 is not shown in cross section. Further, in FIG. 6, the refrigerant 73 is indicated by dots.

  The upper plate 70, the lower plate 71, and the mesh plate 72 are composed of members having high thermal conductivity (for example, copper plates). A large number of recesses (dimples) 74 are provided on the inner surfaces of the upper plate 70 and the lower plate 71. The mesh plate 72 is provided with a large number of through holes (punching holes) 75.

  The upper plate 70, the lower plate 71, and the mesh plate 72 are fixed to each other in a state where one or more mesh plates 72 are sandwiched between the upper plate 70 and the lower plate 71. Has been. In the space formed by the concave portions 74 of the upper plate 70 and the lower plate 71 and the through holes 75 of the mesh plate 72, the refrigerant 73 is sealed (sealed and filled). The refrigerant 73 uses water, for example. The refrigerant 73 is injected into the space after the air in the space is removed, and is in a state that is very easy to vaporize.

  The heat diffusion transfer member 7 is interposed between the package member 4 and the heat dissipation member 6. The heat diffusion transmission member 7 transmits heat generated in the LED chip 3 from the package member 4 to the heat dissipation member 6 while diffusing.

  Between the upper surface of the upper plate 70 and the lower surface of the fixed plate portion 60 and between the lower surface of the lower plate 71 and the upper surface of the substrate 40, a heat conductive material (heat radiation grease) 8 is interposed. Yes.

(Description of the operation of the embodiment)
The semiconductor-type light source 1 of the vehicle lamp according to this embodiment and the vehicle lamp 100 according to this embodiment (hereinafter referred to as “semiconductor-type light source 1 and vehicle lamp 100 according to this embodiment”) are configured as described above. Hereinafter, the operation will be described.

  A current is applied to the LED chip 3. Then, the current is one (P electrode side, anode side, + side) external lead wire 54 → one (P electrode side, anode side, + side) terminal 52 → one (P electrode side, anode side, + side). ) Wiring pattern 44 → P electrode 30 → current diffusion layer 33 → P type semiconductor layer 34 → first light emitting layer 351 → intermediate layer 39 → second light emitting layer 352 → N type semiconductor layer 36 → N electrode 37 → the other (N The electric current flows from the wiring pattern 45 on the electrode side, cathode side, and − side to the terminal 53 on the other side (N electrode side, cathode side, and − side) → the external lead wire 55 on the other side (N electrode side, cathode side and − side).

  Here, in FIG. 4, one (upper side) of the first light emitting layer 351 and the second light emitting layer 352 is P-type and the other (lower side) is N-type. For this reason, if the intermediate layer 39 is not provided, the other (lower) N-type of the first light-emitting layer 351 and the one (upper) P-type of the second light-emitting layer 352 are in contact with each other. No current flows to P type (becomes reverse bias). Therefore, the intermediate layer 39 has a multilayer structure that gradually changes from N-type to P-type, or a metal thin layer that is neither P-type nor N-type, ITO (indium, tin oxide), or the like. This structure has a transparent conductive layer.

  When this current flows through the first light-emitting layer 351 and the second light-emitting layer 352 of the LED chip 3, the first light-emitting layer 351 and the second light-emitting layer 352 emit blue light. Most of the light emitted in blue in the first light emitting layer 351 and the second light emitting layer 352 is directly radiated to the outside from the transparent sapphire substrate 38, as indicated by the white arrows in FIG. The light is reflected by the P electrode 30 and emitted from the transparent sapphire substrate 38 to the outside. Note that light is also emitted to the outside from locations other than the transparent sapphire substrate 38 of the LED chip 3 (surfaces other than the surface mounted on the substrate 40).

  The light emitted from the first light emitting layer 351 and the second light emitting layer 352 of the LED chip 3 is emitted from the LED chip 3 to the outside. The light emitted to the outside, that is, the blue light, is combined with the yellow light excited by the fluorescent member 43 filled in the frame 42 of the package member 4 to become white light. This white light (hereinafter referred to as “light”) is directly emitted from the fluorescent member 43 of the package member 4 or reflected by the frame 42 of the package member 4 and emitted from the fluorescent member 43 to the outside. .

  As indicated by solid line arrows in FIG. 1, light (white light) emitted from the fluorescent member 43 of the package member 4 that is light from the LED chip 3 is irradiated from the semiconductor-type light source 1 to the reflector 20 side. The The irradiated light is reflected by the reflecting surface 22 of the reflector 20 to the optical lens 21 side. The reflected light passes through the optical lens 21 and is irradiated in front of the vehicle as a predetermined light distribution pattern, low beam light distribution pattern, or high beam light distribution pattern.

  When the LED chip 3 emits light, heat is generated in the LED chip 3 (particularly, the first light emitting layer 351 and the second light emitting layer 352). This heat is transmitted from the P electrode 30 and the N electrode 37 of the LED chip 3 to the substrate 40 of the package member 4 through the metal bumps 80 and 81 and the wiring patterns 44 and 45. The heat transferred to the substrate 40 is transferred to the heat diffusion transfer member 7 through the heat conductive material 8. The heat transmitted to the heat diffusion transmitting member 7 is diffused in the heat diffusion transmitting member 7 and transmitted to the fixed plate portion 60 of the heat radiating member 6 through the heat conducting material 8. The heat transmitted to the fixed plate portion 60 is transmitted to the fin portion 61 of the heat dissipation member 6 and radiated from the fin portion 61 to the outside. A part of the heat transmitted to the fixed plate portion 60 is radiated directly from the fixed plate portion 60 to the outside.

  Here, heat diffusion transmission in the heat diffusion transmission member 7 will be described. The heat generated in the LED chip 3 is diffused and transmitted from the substrate 40 to the lower plate 71 of the heat diffusion transmission member 7 via the heat conducting material 8. Then, the refrigerant 73 in contact with the lower plate 71 takes the heat of vaporization from the lower plate 71 and cools and vaporizes the lower plate 71. The vaporized refrigerant 73 moves left and right through the recess 74 and the through hole 75. The vaporized refrigerant 73 is cooled in the vicinity of the upper plate 70 cooled by the heat radiating member 6, passes heat to the upper plate 70, and returns to water. The refrigerant 73 that has returned to water moves downward through the recess 74 and the through-hole 75 due to gravity. The refrigerant 73 that has returned to the water repeats evaporation and condensation again, and efficiently transfers the heat generated in the LED chip 3 to the heat radiating member 6 while spreading it over a large area.

(Explanation of effect of embodiment)
The semiconductor-type light source 1 and the vehicular lamp 100 in this embodiment are configured and operated as described above, and the effects thereof will be described below.

  In the semiconductor light source 1 and the vehicle lamp 100 in this embodiment, heat generated in the LED chip 3 is generated by the heat diffusion transmission member 7 between the substrate 40 of the package member 4 and the fixed plate portion 60 of the heat dissipation member 6. It can be transmitted from the package member 4 to the heat dissipation member 6 while being diffused. That is, the heat generated in the LED chip 3 having a small area is efficiently transmitted from the package member 4 to the heat radiating member 6 via the heat diffusing and transmitting member 7 having a large area, and is efficiently radiated from the heat radiating member 6 to the outside. The For this reason, the heat generated in the LED chip 3 can be efficiently radiated to the outside. Thereby, the luminous efficiency of the LED chip 3 can be improved. That is, strong light is obtained.

  In the semiconductor light source 1 and the vehicular lamp 100 in this embodiment, the package member 4, the heat diffusion transfer member 7, and the heat dissipation member 6 are arranged so that the package member 4 faces downward in the gravity direction. As a result, the heat diffusion transmission member 7 is positioned above the package member 4, and the heat dissipation member 6 is positioned above the heat diffusion transmission member 7. Thereby, the heat generated in the LED chip 3 mounted on the package member 4 can be diffused and transmitted from the package member 4 to the heat radiating member 6 through the heat diffusion transmission member 7 more efficiently. it can.

  The semiconductor-type light source 1 and the vehicle lamp 100 in this embodiment are composed of two light emitting layers, that is, a first light emitting layer 351 and a second light emitting layer 352, in which the LED chip 3 is stacked in the light emitting direction. The amount of heat generated in the LED chip 3 increases. However, since the semiconductor-type light source 1 and the vehicle lamp 100 in this embodiment use the heat diffusion transfer member 7, the heat generated in the two light-emitting layers, that is, the first light-emitting layer 351 and the second light-emitting layer 352, is packaged. It can be efficiently diffused and transmitted from the member 4 to the heat radiating member 6 through the heat diffusion transmission member 7. As a result, the semiconductor light source 1 and the vehicle lamp 100 in this embodiment are effective and optimal for the LED chip 3 composed of a plurality of light emitting layers.

  The semiconductor-type light source 1 and the vehicle lamp 100 in this embodiment are composed of two light-emitting layers, that is, a first light-emitting layer 351 and a second light-emitting layer 352, in which the LED chip 3 is laminated in the light emission direction. For this reason, the light of the LED chip 3 can be increased without increasing the light emitting area of the LED chip 3 (the luminance can be increased). Thereby, it is most suitable for the vehicle lamp 100, for example, the headlamp of the headlamp for motor vehicles. That is, when the light emitting area of the LED chip 3 is large, it is difficult to design the light distribution of the light distribution control member 2 and to control the light distribution with high accuracy by the light distribution control member 2. Moreover, if the brightness | luminance of LED chip 3 is low, it will be difficult to obtain a high-intensity light distribution pattern, for example, a high beam light distribution pattern. However, since the semiconductor-type light source 1 and the vehicular lamp 100 in this embodiment have a small light emitting area and a high luminance of the LED chip 3, the vehicular lamp 100, for example, an automobile front that irradiates a high beam light distribution pattern is used. Ideal for lighting headlamps.

  In the semiconductor-type light source 1 and the vehicle lamp 100 in this embodiment, the package member 4 converts the wavelength of the light emitted from the LED chip 3 into a different wavelength, that is, from the fluorescent member 43 that converts blue light into yellow light. It is configured. As a result, it is most suitable for the vehicular lamp 100, for example, a headlamp of an automotive headlamp.

(Description of example other than embodiment)
In the embodiment, the package member 4, the heat diffusion transfer member 7, and the heat dissipation member 6 are arranged from the bottom to the top. However, in the present invention, the package member 4, the heat diffusion transfer member 7, and the heat dissipation member 6 may be arranged in the lateral direction or substantially in the lateral direction. In this case, the heat dissipation effect is almost the same as that arranged from the bottom to the top. Moreover, in this invention, you may arrange | position the package member 4, the thermal-diffusion transmission member 7, and the heat radiating member 6 from the top to the bottom.

  In this embodiment, the LED chip 3 is composed of two light emitting layers stacked in the light emission direction, that is, a first light emitting layer 351 and a second light emitting layer 352. However, in the present invention, one or more light emitting layers may be provided.

  Furthermore, in this embodiment, a low beam light distribution pattern or a high beam light distribution pattern is irradiated. However, in the present invention, a light distribution pattern other than a low beam distribution pattern or a high beam distribution pattern, for example, a bi-function light distribution pattern for switching between a low beam distribution pattern and a high beam distribution pattern, a fog lamp distribution pattern, and a stop lamp Other light distribution patterns such as a light distribution pattern and a tail lamp light distribution pattern may be used.

  Furthermore, in this embodiment, the light distribution control member 2 composed of the reflector 20 and the optical lens 21 is used. However, in the present invention, as the light distribution control member, a light distribution control member other than the light distribution control member 2 constituted by the reflector 20 and the optical lens 21, for example, a lens direct light type light distribution control member, a projector type Alternatively, a light distribution control member, a reflector type light distribution control member, or the like may be used.

  Furthermore, in this embodiment, the LED chip 3 is used as the semiconductor light emitting element. However, in the present invention, a light emitting element other than the LED chip 3, such as a laser diode (LD), may be used as the semiconductor light emitting element.

  Furthermore, in this embodiment, the heat diffusion transfer member 7 is composed of an upper plate 70, a lower plate 71, a mesh plate 72, and a refrigerant 73. However, in this invention, you may use things other than the thing of the said structure as a thermal-diffusion transmission member. For example, you may use what laminated | stacked the graphite board (ultra high heat conductive graphite board) with an extremely high thermal conductivity. As an example of use, a graphite plate laminate member is sandwiched between a package member and a heat dissipation member so that the surface of the graphite plate is parallel or nearly parallel to the line connecting the package member (light emitting element) and the heat dissipation member. To do. At this time, the heat radiation efficiency can be further improved by making the surface of the laminated member of the graphite plate sufficiently larger than the surface of the package member (light emitting element).

DESCRIPTION OF SYMBOLS 1 Semiconductor type light source 2 Light distribution control member 20 Reflector 21 Optical lens 22 Reflecting surface 3 LED chip 30 P electrode 33 Current diffusion layer 34 P type semiconductor layer 351 First light emitting layer 352 Second light emitting layer 36 N type semiconductor layer 37 N electrode 38 Transparent Support Layer 39 Intermediate Layer 4 Package Member 40 Substrate 42 Frame 43 Fluorescent Member 44, 45 Wiring Pattern 5 Power Feed Member 52, 53 Terminal 54, 55 External Lead Wire 56 Holder 57 Presser Plate 6 Heat Dissipation Member 60 Fixed Plate Part 61 Fin Portion 62, 63 Screw 7 Heat diffusion transmission member 70 Upper plate 71 Lower plate 72 Mesh plate 73 Refrigerant 74 Recessed portion 75 Through hole 8 Thermal conductive material 80, 81 Metal bump 100 Vehicle lamp

Claims (5)

In a semiconductor-type light source for a vehicle lamp,
A semiconductor light emitting device;
A package member on which the semiconductor light emitting element is mounted;
A power supply member for supplying a current to the semiconductor light emitting element;
A heat radiating member equipped with the package member and the power feeding member;
A heat diffusion transmission member that is interposed between the package member and the heat dissipation member and transmits heat generated in the semiconductor light emitting element from the package member to the heat dissipation member while diffusing;
A semiconductor-type light source for a vehicular lamp characterized by comprising: The package member, the heat diffusion transfer member, and the heat dissipation member are arranged in a lateral direction or a substantially lateral direction, or such that the package member is directed downward in the direction of gravity.
The semiconductor-type light source of the vehicular lamp according to claim 1. The semiconductor light emitting element is composed of a plurality of light emitting layers stacked in a light emitting direction.
The semiconductor-type light source of the vehicular lamp according to claim 1 or 2. The package member is composed of a fluorescent member that converts the wavelength of light emitted from the semiconductor light emitting element into a different wavelength.
The semiconductor light source of the vehicular lamp according to any one of claims 1 to 3. The semiconductor type light source of the vehicular lamp according to any one of claims 1 to 4,
A light distribution control member for controlling light distribution from the semiconductor-type light source;
A vehicular lamp characterized by comprising:

Images