JP2014522118A - 半導体検出装置 - Google Patents
半導体検出装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 238000001514 detection method Methods 0.000 claims abstract description 99
- 239000000463 material Substances 0.000 claims abstract description 26
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- 238000009941 weaving Methods 0.000 description 13
- 238000011896 sensitive detection Methods 0.000 description 12
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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Abstract
【選択図】図2
Description
Claims (14)
- 入力イベントに応答して、電荷を生成する半導体材料の層と、
前記半導体材料の層内に形成され、前記半導体材料の層において生成された電荷を収集する画素が2次元で空間的に分散された画素のアレイと、
前記画素に接続され、前記画素からの収集された前記電荷を表す信号を、読み出し回路に供給するトラックと、を備え、
前記アレイの前記画素は、画素の複数のセットへとグループ化され、前記複数のセットのそれぞれにおける全ての前記画素は、同じ前記トラックに接続され、
1つの入力イベントによって生成された電荷を収集可能なn個の隣接する前記画素のグループが、前記画素のグループに固有のn個のトラックからなる組み合わせに接続されるように、前記画素の複数のセットが織り合わせられ、
前記nは、2、3または4のうちの何れか一つの値を有する、半導体検出装置。 - 前記画素の複数のセットは、前記画素のアレイにわたって空間的に分散する複数の画素のラインであり、
前記複数の画素のラインは、少なくとも2つの画素のサブアレイへとグループ化され、
前記サブアレイそれぞれ内の前記複数の画素のラインは、前記画素のアレイにわたって、前記サブアレイごとに異なる方向に空間的に分散される、請求項1に記載の半導体検出装置。 - 前記画素のアレイは、規則的な矩形のアレイであり、前記複数の画素のラインは、直線状に配列された前記複数の画素のラインである、請求項2に記載の半導体検出装置。
- 前記少なくとも2つの画素のサブアレイは、各ラインの前記画素が、前記矩形のアレイの行方向または列方向に空間的に分散する少なくとも1つのサブアレイを含む、請求項3に記載の半導体検出装置。
- 前記少なくとも2つの画素のサブアレイは、各列の前記画素が、前記矩形のアレイの斜め方向に空間的に分散される少なくとも1つのサブアレイを含む、請求項3または4に記載の半導体検出装置。
- 前記複数の画素の列は、2つの画素のサブアレイへとグループ化される、請求項2から5の何れか一項に記載の半導体検出装置。
- 前記画素のアレイは、前記半導体検出装置の領域にわたって連続して分布する、請求項1から6の何れか一項に記載の半導体検出装置。
- 前記画素のアレイは、画素の規則的なアレイである、請求項1から7の何れか一項に記載の半導体検出装置。
- 前記画素は、ボルタモードで動作するように設けられ、
前記画素はそれぞれ、前記画素によって収集された前記電荷を表す信号をバッファするバッファ装置構成を更に有し、
前記トラックは、バッファされた前記信号を受信するべく、前記バッファ装置構成と接続される、請求項1から8の何れか一項に記載の半導体検出装置。 - 前記画素はそれぞれ、前記画素をリセットするために、前記画素にリセット電圧を選択的に印加するリセット装置構成を更に有する、請求項9に記載の半導体検出装置。
- 前記半導体検出装置は、CMOS構造を備える、請求項9または10に記載の半導体検出装置。
- 前記画素は、導電モードで動作するように設けられる、請求項1から8の何れか一項に記載の半導体検出装置。
- 前記半導体材料の層は、入射粒子から電荷を生成し、
前記画素はそれぞれ、コンタクトを有し、
前記コンタクトは、前記半導体材料の層において生成された電荷を収集するために、前記半導体材料の層の一方の面上に、ドープされた半導体材料の能動領域を含む、請求項12に記載の半導体検出装置。 - 請求項1から13の何れか一項に記載の半導体検出装置と、
前記トラックに接続された読み出し回路と、を備え、
前記読み出し回路は、少なくともn個の前記トラックからなる組み合わせにおける時間的に一致する信号を検出し、検出された前記トラックの前記組み合わせに対応する電荷収集の領域の位置を示す信号を出力する、検出器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB201113436A GB201113436D0 (en) | 2011-08-03 | 2011-08-03 | Semiconductor detector device |
GB1113436.8 | 2011-08-03 | ||
PCT/GB2012/051679 WO2013017828A1 (en) | 2011-08-03 | 2012-07-13 | Semiconductor detector device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014522118A true JP2014522118A (ja) | 2014-08-28 |
JP2014522118A5 JP2014522118A5 (ja) | 2015-08-27 |
Family
ID=44735427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014523379A Pending JP2014522118A (ja) | 2011-08-03 | 2012-07-13 | 半導体検出装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9698181B2 (ja) |
EP (1) | EP2740154A1 (ja) |
JP (1) | JP2014522118A (ja) |
GB (1) | GB201113436D0 (ja) |
WO (1) | WO2013017828A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021145121A (ja) * | 2020-03-10 | 2021-09-24 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | 固体撮像素子 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107219168B (zh) * | 2017-08-02 | 2024-03-29 | 贵州工程应用技术学院 | 一种预损伤智能损伤探测器 |
WO2019233751A1 (en) * | 2018-06-04 | 2019-12-12 | Paul Scherrer Institut | Pixel detector system optimized for pencil beam scanning proton therapy |
US11264422B2 (en) | 2019-08-30 | 2022-03-01 | LightSpin Technologies Inc. | Scalable position-sensitive photodetector device |
US11762108B2 (en) | 2020-01-21 | 2023-09-19 | LightSpin Technologies Inc. | Modular pet detector comprising a plurality of modular one-dimensional arrays of monolithic detector sub-modules |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61275683A (ja) * | 1985-05-31 | 1986-12-05 | Shimadzu Corp | 半導体放射線位置検出装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4392057A (en) | 1980-02-22 | 1983-07-05 | National Research Development Corporation | Position-sensitive radiation detector |
US5117114A (en) * | 1989-12-11 | 1992-05-26 | The Regents Of The University Of California | High resolution amorphous silicon radiation detectors |
US6218668B1 (en) | 1997-07-08 | 2001-04-17 | The Regents Of The University Of California | Coplanar interdigitated grid detector with single electrode readout |
US6831263B2 (en) | 2002-06-04 | 2004-12-14 | Intel Corporation | Very high speed photodetector system using a PIN photodiode array for position sensing |
JP5027832B2 (ja) | 2009-02-17 | 2012-09-19 | 株式会社日立製作所 | 放射線検出モジュール及び放射線撮像装置 |
US8723093B2 (en) * | 2011-01-10 | 2014-05-13 | Alexander Krymski | Image sensors and methods with shared control lines |
-
2011
- 2011-08-03 GB GB201113436A patent/GB201113436D0/en not_active Ceased
-
2012
- 2012-07-13 WO PCT/GB2012/051679 patent/WO2013017828A1/en active Application Filing
- 2012-07-13 JP JP2014523379A patent/JP2014522118A/ja active Pending
- 2012-07-13 EP EP12737866.9A patent/EP2740154A1/en not_active Withdrawn
- 2012-07-13 US US14/236,533 patent/US9698181B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61275683A (ja) * | 1985-05-31 | 1986-12-05 | Shimadzu Corp | 半導体放射線位置検出装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021145121A (ja) * | 2020-03-10 | 2021-09-24 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | 固体撮像素子 |
US11631709B2 (en) | 2020-03-10 | 2023-04-18 | Visera Technologies Company Limited | Solid-state image sensor |
JP7313318B2 (ja) | 2020-03-10 | 2023-07-24 | 采▲ぎょく▼科技股▲ふん▼有限公司 | 固体撮像素子 |
Also Published As
Publication number | Publication date |
---|---|
GB201113436D0 (en) | 2011-09-21 |
US20140159189A1 (en) | 2014-06-12 |
US9698181B2 (en) | 2017-07-04 |
WO2013017828A1 (en) | 2013-02-07 |
EP2740154A1 (en) | 2014-06-11 |
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