JP2014522118A - 半導体検出装置 - Google Patents

半導体検出装置 Download PDF

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Publication number
JP2014522118A
JP2014522118A JP2014523379A JP2014523379A JP2014522118A JP 2014522118 A JP2014522118 A JP 2014522118A JP 2014523379 A JP2014523379 A JP 2014523379A JP 2014523379 A JP2014523379 A JP 2014523379A JP 2014522118 A JP2014522118 A JP 2014522118A
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JP
Japan
Prior art keywords
pixels
pixel
detection device
array
semiconductor
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Pending
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JP2014523379A
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English (en)
Japanese (ja)
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JP2014522118A5 (enExample
Inventor
モルドバン、グリゴレ
イアン カークランド、アンガス
リン、チャオ
Original Assignee
アイシス イノヴェイション リミテッド
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Publication of JP2014522118A publication Critical patent/JP2014522118A/ja
Publication of JP2014522118A5 publication Critical patent/JP2014522118A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014523379A 2011-08-03 2012-07-13 半導体検出装置 Pending JP2014522118A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1113436.8 2011-08-03
GB201113436A GB201113436D0 (en) 2011-08-03 2011-08-03 Semiconductor detector device
PCT/GB2012/051679 WO2013017828A1 (en) 2011-08-03 2012-07-13 Semiconductor detector device

Publications (2)

Publication Number Publication Date
JP2014522118A true JP2014522118A (ja) 2014-08-28
JP2014522118A5 JP2014522118A5 (enExample) 2015-08-27

Family

ID=44735427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014523379A Pending JP2014522118A (ja) 2011-08-03 2012-07-13 半導体検出装置

Country Status (5)

Country Link
US (1) US9698181B2 (enExample)
EP (1) EP2740154A1 (enExample)
JP (1) JP2014522118A (enExample)
GB (1) GB201113436D0 (enExample)
WO (1) WO2013017828A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021145121A (ja) * 2020-03-10 2021-09-24 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited 固体撮像素子

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107219168B (zh) * 2017-08-02 2024-03-29 贵州工程应用技术学院 一种预损伤智能损伤探测器
WO2019233751A1 (en) * 2018-06-04 2019-12-12 Paul Scherrer Institut Pixel detector system optimized for pencil beam scanning proton therapy
US11264422B2 (en) 2019-08-30 2022-03-01 LightSpin Technologies Inc. Scalable position-sensitive photodetector device
US11762108B2 (en) 2020-01-21 2023-09-19 LightSpin Technologies Inc. Modular pet detector comprising a plurality of modular one-dimensional arrays of monolithic detector sub-modules

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61275683A (ja) * 1985-05-31 1986-12-05 Shimadzu Corp 半導体放射線位置検出装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4392057A (en) 1980-02-22 1983-07-05 National Research Development Corporation Position-sensitive radiation detector
US5117114A (en) * 1989-12-11 1992-05-26 The Regents Of The University Of California High resolution amorphous silicon radiation detectors
US6218668B1 (en) 1997-07-08 2001-04-17 The Regents Of The University Of California Coplanar interdigitated grid detector with single electrode readout
US6831263B2 (en) 2002-06-04 2004-12-14 Intel Corporation Very high speed photodetector system using a PIN photodiode array for position sensing
JP5027832B2 (ja) 2009-02-17 2012-09-19 株式会社日立製作所 放射線検出モジュール及び放射線撮像装置
US8723093B2 (en) * 2011-01-10 2014-05-13 Alexander Krymski Image sensors and methods with shared control lines

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61275683A (ja) * 1985-05-31 1986-12-05 Shimadzu Corp 半導体放射線位置検出装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021145121A (ja) * 2020-03-10 2021-09-24 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited 固体撮像素子
US11631709B2 (en) 2020-03-10 2023-04-18 Visera Technologies Company Limited Solid-state image sensor
JP7313318B2 (ja) 2020-03-10 2023-07-24 采▲ぎょく▼科技股▲ふん▼有限公司 固体撮像素子

Also Published As

Publication number Publication date
WO2013017828A1 (en) 2013-02-07
GB201113436D0 (en) 2011-09-21
US9698181B2 (en) 2017-07-04
EP2740154A1 (en) 2014-06-11
US20140159189A1 (en) 2014-06-12

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