JP2014225682A - Method of manufacturing semiconductor chip with adhesive layer and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor chip with a thin adhesive layer, capable of miniaturizing a semiconductor device.SOLUTION: The method of manufacturing a semiconductor chip with an adhesive layer comprises: a coating step of applying an adhesive composition containing a solvent onto one surface of a semiconductor wafer having a circuit on the other surface; an adhesive layer forming step of removing the solvent in the adhesive composition to form an adhesive layer; and a cutting step of cutting the semiconductor wafer having the adhesive layer formed thereon to obtain a semiconductor chip with the adhesive layer. The adhesive composition contains (A) a thermoplastic resin, (B) a thermosetting resin, (C) the solvent removable by heating, and an inorganic filler. The content of the inorganic filler is 1-1,000 pts.mass based on 100 pts.mass of the thermoplastic resin (A).

Description

  The present invention relates to a method for manufacturing a semiconductor chip with an adhesive layer and a semiconductor device.

  A stack package type semiconductor in which a plurality of chips are stacked is used for a memory or the like. This stack package is becoming thinner year by year, and in recent years, chips of 50 μm or less have been used.

  Conventionally, when manufacturing such a semiconductor device, there is a method in which a wafer is processed to a thickness of about 50 μm, a film adhesive is pasted on the circuit back surface of the wafer, and then the chip and the adhesive are cut by dicing. Has been used.

  However, it is difficult to produce a film-like adhesive having a thickness of 5 μm or less, and a thin film is difficult to attach to a wafer. Therefore, it is difficult to manufacture a small semiconductor device.

  The present invention has been made in view of the above circumstances, and a method for manufacturing a semiconductor chip with a thin adhesive layer capable of downsizing a semiconductor device, and an adhesion obtained by this manufacturing method. An object of the present invention is to provide a semiconductor device having a semiconductor chip with an agent layer.

  The present invention includes an application step of applying an adhesive composition containing a solvent on the other side of a semiconductor wafer having a circuit on one side, and an adhesive forming an adhesive layer by removing the solvent of the adhesive composition There is provided a method for producing a semiconductor chip with an adhesive layer, comprising: an agent layer forming step; and a cutting step of cutting the semiconductor wafer on which the adhesive layer is formed to obtain a semiconductor chip with an adhesive layer.

  With this manufacturing method, it is possible to manufacture a semiconductor chip with an adhesive layer including an adhesive layer having a thickness of 5 μm or less.

  More preferably, the adhesive composition has a viscosity of 1000 mPa · s or less measured at 27 ° C. using an E-type viscometer. With such a viscosity, it is possible to make the adhesive composition applied to the circuit back surface of the semiconductor wafer uniform and have a predetermined thickness.

  The adhesive composition preferably includes (A) a thermoplastic resin, (B) a thermosetting resin, and (C) the solvent that can be removed by heating, and further includes (D) a colorant. But you can. By containing the colorant, it is possible to easily identify the adhesive layer having a small thickness, and it becomes easy to check a defective portion such as a void, thereby improving workability.

  (A) The thermoplastic resin more preferably contains a compound having an imide skeleton in the molecule. Thereby, the adhesiveness of an adhesive bond layer can be improved.

  (A) The glass transition temperature (Tg) of the thermoplastic resin is more preferably 10 to 100 ° C. Thereby, it becomes possible to heat-press the semiconductor chip with the adhesive layer to the adherend without damaging the circuit.

  More preferably, the adhesive layer has a thickness of 1 to 5 μm. As a result, a semiconductor chip with an adhesive layer that is thinner than the conventional one can be obtained.

  The tack strength at 30 ° C. of the adhesive layer is more preferably 0.98 N or less. A semiconductor chip having such an adhesive layer is suitable for the adhesiveness of the adhesive layer, so that it is easy to handle, breakable when dicing, peelable from the dicing sheet after dicing, and pick-up after dicing. It is.

  The present invention also provides a semiconductor device having a semiconductor chip with an adhesive layer obtained by the above manufacturing method. By having the semiconductor chip with an adhesive layer of the present invention, it is possible to reduce the size of the semiconductor device.

  The present invention provides a method for producing a thin semiconductor chip with an adhesive layer and a semiconductor device having the semiconductor chip with an adhesive layer obtained by this production method.

It is a figure which shows the process of grinding the circuit back surface of the semiconductor wafer on which the back grind tape was laminated | stacked. It is sectional drawing which shows the semiconductor wafer with an adhesive bond layer in which the back grind tape was laminated | stacked. (A) is sectional drawing which shows the state which laminated | stacked the dicing tape on the semiconductor wafer with an adhesive layer by which the back grind tape was laminated | stacked. (B) is sectional drawing which shows the state which peeled the back grind tape from the state of (a). (A), (b) is sectional drawing which shows one Embodiment of a cutting process. It is sectional drawing which shows one Embodiment of the semiconductor device of this invention. It is sectional drawing which shows one Embodiment of the semiconductor device of this invention.

  Hereinafter, preferred embodiments of the present invention will be described in detail, but the present invention is not limited to the following embodiments. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. In addition, the drawings are partially exaggerated for easy understanding, and the dimensional ratios do not necessarily match those described.

  The manufacturing method of this embodiment includes an application step of applying an adhesive composition containing a solvent on the other side of a semiconductor wafer having a circuit on one side, and an adhesive layer by removing the solvent of the adhesive composition. Forming an adhesive layer, and cutting the semiconductor wafer on which the adhesive layer is formed to obtain a semiconductor chip with an adhesive layer. Hereinafter, details of each process will be described.

  In the application step, the adhesive composition is applied to the circuit back surface of the semiconductor wafer. In this specification, the surface on which the circuit of the semiconductor wafer is formed is referred to as a circuit surface (one surface), and the back surface is referred to as a circuit back surface (the other surface).

  As the semiconductor wafer, a wafer having a circuit formed by integrating various semiconductor elements on the surface by a known manufacturing method is preferably used. The semiconductor wafer may be one in which the back surface of the circuit is mechanically ground to reduce its thickness (thinner). For example, as shown in FIG. 1, this cutting is performed by laminating a peelable adhesive tape (back grind tape 20) on the circuit surface 12 of the semiconductor wafer, and then using a back grinding device (back grinder 30) to peel the circuit back surface 14. This is done by grinding to a predetermined thickness.

  The application step is performed by applying the varnish-like adhesive composition to the circuit back surface 14 of the semiconductor wafer 10 by spin coating, printing method, ink jet method or the like.

  Subsequently, as shown in FIG. 2, in the adhesive layer forming step, the solvent of the adhesive composition applied to the circuit back surface 14 of the semiconductor wafer 10 is removed to form the adhesive layer 40. The removal of the solvent is not particularly limited, but can be performed by heating, for example. The semiconductor wafer 50 with an adhesive layer is obtained by the above process.

  Subsequently, in the cutting step, the semiconductor wafer 50 with an adhesive layer is cut by dicing, and is separated into individual semiconductor chips 70 with an adhesive layer. Although a cutting process may be performed by a well-known method, it can be performed as follows, for example.

  As shown in FIG. 3A, a peelable adhesive tape (dicing tape 60) is laminated on the adhesive layer 40 of the semiconductor wafer 50 with an adhesive layer, and as shown in FIG. 3B. Then, the back grind tape 20 is peeled off. At this time, it is preferable that the dicing tape 60 is first laminated on the adhesive layer 40 and then the back grind tape 20 is peeled off. This makes it possible to prevent cracks in the thinned wafer and to prevent the thinned wafer from warping.

  Subsequently, as shown in FIG. 4A, the adhesive layer-attached semiconductor wafer 50 is cut along dicing lines and separated into individual adhesive layer-attached semiconductor chips 70 by a known method. The semiconductor chip 70 with an adhesive layer includes the semiconductor chip 16 and the adhesive layer 40.

  As shown in FIG. 4B, the semiconductor chip 70 with an adhesive layer is separated by cutting the semiconductor wafer 50 with an adhesive layer along the dicing line without stacking the dicing tape 60, as shown in FIG. You may go. As described above, the semiconductor chip 70 with an adhesive layer can be obtained.

  Then, the semiconductor chip 70 with an adhesive layer can be obtained by peeling the individual semiconductor chip 70 with an adhesive layer from the dicing tape 60 or the back grind tape 20. For example, by using a pickup device, the semiconductor chip 70 with an adhesive layer can be picked up and bonded to an adherend.

  FIG. 5 is a cross-sectional view showing the semiconductor device of this embodiment. In the semiconductor device 200 shown in FIG. 5, the semiconductor chip 70 with an adhesive layer is bonded to the support member 100 via the adhesive layer 40, and the connection terminals (not shown) of the semiconductor chip 70 with the adhesive layer are wires 80. It is electrically connected to an external connection terminal (not shown) through the connector, and is further sealed with a sealing material 110.

  FIG. 6 is a cross-sectional view showing a semiconductor device according to another embodiment. In the semiconductor device 210 shown in FIG. 6, the first stage semiconductor chip 70a with an adhesive layer is bonded to the support member 100 on which the terminals 90 are formed via the adhesive layer 40a, and the semiconductor chip 210a with the adhesive layer is placed on the semiconductor chip 70a with the adhesive layer. The semiconductor chip 70b with an adhesive layer is bonded via the adhesive layer 40b and the whole is sealed with the sealing material 110. The connection terminals (not shown) of the adhesive layer-attached semiconductor chip 70a and the adhesive layer-attached semiconductor chip 70b are electrically connected to external connection terminals (not shown) via wires 80, respectively.

  In the semiconductor device shown in FIG. 5, a semiconductor chip 70 with an adhesive layer is placed on the support member 100 and bonded by thermocompression bonding (thermocompression bonding process), and then a wire bonding process and, if necessary, a sealing material. It can manufacture by passing through processes, such as a sealing process.

  In the semiconductor device shown in FIG. 6, the semiconductor chips 70a and 70b with adhesive layers are placed on the support member 100 and bonded by thermocompression bonding, and then a wire bonding step, and a sealing step using a sealing material as necessary. It can manufacture by going through.

  Then, the adhesive composition used suitably in the manufacturing method of the semiconductor chip with an adhesive layer of this embodiment is demonstrated.

  The adhesive composition preferably contains (A) a thermoplastic resin (B), a thermosetting resin (C), and a solvent that can be removed by heating.

  (A) The thermoplastic resin is not particularly limited, for example, polyimide resin, polyamide resin, polyamideimide resin, polyetherimide resin, polyurethaneimide resin, polyurethaneamideimide resin, siloxane polyimide resin, polyesterimide resin, In addition to these copolymers, phenoxy resins, polysulfone resins, polyethersulfone resins, polyphenylene sulfide resins, polyester resins, polyether ketone resins, (meth) acrylic copolymers having a weight average molecular weight of 100,000 to 1,000,000, etc. It is at least one resin selected from the group consisting of, and among them, a thermoplastic resin having an imide skeleton in the molecule is more preferable than other resins in terms of high adhesion, and among them, a polyimide resin is more preferably used. .

  The polyimide resin can be obtained, for example, by subjecting tetracarboxylic dianhydride and diamine to a condensation reaction by a known method. That is, in an organic solvent, tetracarboxylic dianhydride and diamine are equimolar or, if necessary, the composition ratio is 0 to 1.0 mol of tetracarboxylic dianhydride. It is adjusted in the range of 0.5 to 2.0 mol, preferably 0.8 to 1.0 mol (the order of addition of each component is arbitrary), and the addition reaction is performed at a reaction temperature of 80 ° C. or lower, preferably 0 to 60 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually increases, and polyamic acid, which is a polyimide precursor, is generated. The acid dianhydride is preferably recrystallized and purified with acetic anhydride in order to suppress deterioration of various properties of the adhesive composition.

  In addition, about the composition ratio of the said tetracarboxylic dianhydride and diamine, when the total of diamine exceeds 2.0 mol with respect to the total 1.0 mol of tetracarboxylic dianhydride, in the polyimide resin obtained When the total amount of amine-terminated polyimide oligomers is less than 0.5 mol, the amount of acid-terminated polyimide oligomers increases and the weight average molecular weight of the polyimide resin becomes excessively low. Since the properties such as heat resistance of the agent layer tend to decrease, it is not preferable. The molecular weight of the polyimide resin can be adjusted by adjusting the composition ratio of tetracarboxylic dianhydride and diamine within the above range.

  The acid dianhydride to be used is preferably heated and dried at a temperature lower than the melting point of the monomer by 10 to 20 ° C. for 12 hours or more, or recrystallized and purified with acetic anhydride before use. It is preferable that the difference between the endothermic start temperature and the endothermic peak temperature by a differential scanning calorimeter (DSC) is within 10 ° C. The above endothermic start temperature and endothermic peak temperature are, for example, the conditions of a sample amount of 5 mg, a temperature increase rate of 5 ° C./min, and a measurement atmosphere: nitrogen using DSC (DSC-7 manufactured by Perkin Elmer). The value measured with can be used.

  In addition, the said polyamic acid can also adjust the molecular weight by heating at the temperature of 50-80 degreeC, and making it depolymerize.

  The polyimide resin can be obtained by dehydrating and ring-closing the reaction product (polyamic acid). The dehydration ring closure can be performed by a thermal ring closure method in which heat treatment is performed and a chemical ring closure method using a dehydrating agent.

  There is no restriction | limiting in particular as tetracarboxylic dianhydride used as a raw material of a polyimide resin, For example, pyromellitic dianhydride, 3,3 ', 4,4'-biphenyl tetracarboxylic dianhydride, 2,2 ', 3,3'-biphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane Anhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, bis (2,3-dicarboxyphenyl) ) Methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 3,4,9,10-perylenetetracar Acid dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3 ′, 4′-benzophenone tetra Carboxylic dianhydride, 2,3,2 ′, 3′-benzophenone tetracarboxylic dianhydride, 3,3,3 ′, 4′-benzophenone tetracarboxylic dianhydride, 1,2,5,6- Naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,4,5-naphthalenetetra Carboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2, 3, 6, 7- Trachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride Anhydride, thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3,3 ′, 4′-biphenyltetracarboxylic dianhydride, 3,4,3 ′, 4′-biphenyltetra Carboxylic dianhydride, 2,3,2 ′, 3′-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4-dicarboxyphenyl) Methylphenylsilane dianhydride, bis (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride, 1, 3-bis (3,4-dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylenebis (trimellitic anhydride), ethylenetetracarboxylic dianhydride, 1,2 , 3,4-Butanetetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7- Hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic acid Dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic dianhydride, bicyclo- [2,2 , 2]-Oct -7-ene-2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2, -bis [4- (3 , 4-Dicarboxyphenyl) phenyl] propane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2, -bis [4- (3,4-di Carboxyphenyl) phenyl] hexafluoropropane dianhydride, 4,4′-bis (3,4-dicarboxyphenoxy) diphenyl sulfide dianhydride, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis (tri Merit acid anhydride), 1,3-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic acid anhydride), 5- (2,5-dioxotetrahydride) Furyl) -3-methyl-3-cyclohexene-1,2-dicarboxylic dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride, 4,4 ′,-oxydiphthalic dianhydride, Examples thereof include a tetracarboxylic dianhydride represented by the following general formula (I) and a tetracarboxylic dianhydride represented by the following structural formula (II).

  The tetracarboxylic dianhydride represented by the following general formula (I) can be synthesized, for example, from trimellitic anhydride monochloride and the corresponding diol, specifically 1,2- (ethylene) bis ( Trimellitate anhydride), 1,3- (trimethylene) bis (trimellitic anhydride), 1,4- (tetramethylene) bis (trimellitic anhydride), 1,5- (pentamethylene) bis (trimellitic anhydride), 1 , 6- (Hexamethylene) bis (trimellitic anhydride), 1,7- (heptamethylene) bis (trimellitic anhydride), 1,8- (octamethylene) bis (trimellitic anhydride), 1,9- (nonamethylene) ) Bis (trimellitic anhydride), 1,10- (decamethylene) bis (trimellitic anhydride), 1,12- (dodecamethylene) ) Bis (trimellitate anhydride), 1,16 (hexamethylene decamethylene) bis (trimellitate anhydride), 1,18 (octadecamethylene) bis (trimellitate anhydride) and the like. Among these, 4,4 ′,-oxydiphthalic dianhydride or tetracarboxylic dianhydride represented by the following structural formula (II) is preferable in that it can provide excellent moisture resistance reliability. The above-mentioned tetracarboxylic dianhydrides can be used singly or in combination of two or more.

［式中、ｎは２〜２０の整数を示す。］

[Wherein n represents an integer of 2 to 20. ]

  There is no restriction | limiting in particular as diamine used as a raw material of said polyimide resin, For example, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'- diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4′-diaminodiphenyl ether, 3,3′-diaminodiphenylmethane, 3,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylethermethane, bis (4-amino-3,5-dimethylphenyl) methane, bis ( 4-amino-3,5-diisopropylphenyl) methane, 3,3′-diaminodiphenyldifluoromethane, 3,4′-diaminodiphenyldifluoromethane, 4,4′-diaminodiphenyldifluoromethane, 3,3′-diaminodiphenyl Sulfo 3,4′-diaminodiphenylsulfone, 4,4′-diaminodiphenylsulfone, 3,3′-diaminodiphenylsulfide, 3,4′-diaminodiphenylsulfide, 4,4′-diaminodiphenylsulfide, 3,3 ′ -Diaminodiphenyl ketone, 3,4'-diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane, 2,2 '-(3,4'-diaminodiphenyl) Propane, 2,2-bis (4-aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2 -Bis (4-aminophenyl) hexafluoropropane, 1,3-bis (3-aminophenoxy) Benzene, 1,4-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 ′-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 3 , 4 ′-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 4,4 ′-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 2,2-bis (4- ( 3-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminoenoxy) phenyl) sulfide, bis (4- (4-aminoenoxy) phenyl) sulfide, bis (4- (3-amino Noenoxy) phenyl) sulfone, bis (4- (4-aminoenoxy) phenyl) sulfone, 3,3′-dihydroxy-4,4′-diaminobiphenyl, aromatic diamines such as 3,5-diaminobenzoic acid, 1,3 It is preferable to include -bis (aminomethyl) cyclohexane, 2,2-bis (4-aminophenoxyphenyl) propane, and an aliphatic ether diamine represented by the following general formula (III).

［式中、Ｑ_１、Ｑ_２、及びＱ_３は、各々独立に炭素数１〜１０のアルキレン基を示し、ｍは２〜８０の整数を示す。］

[Wherein, Q ₁ , Q ₂ , and Q ₃ each independently represent an alkylene group having 1 to 10 carbon atoms, and m represents an integer of 2 to 80. ]

  Specific examples of the diamine represented by the general formula (III) include an aliphatic diamine having the following structural formula.

  The diamine represented by the general formula (III) may be an aliphatic ether diamine of the following general formula (IV).

［式中、ｐは０〜８０の整数を示す。］

[In formula, p shows the integer of 0-80. ]

  The diamine represented by the general formula (III) may be an aliphatic diamine represented by the following general formula (V), specifically 1,2-diaminoethane, 1,3-diaminopropane, 1,4. -Diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diamino It may be undecane, 1,12-diaminododecane, 1,2-diaminocyclohexane and the like.

［式中、ｎは５〜２０の整数を示す。］

[In formula, n shows the integer of 5-20. ]

  The diamine represented by the above general formula (III) may be a siloxane diamine represented by the following general formula (VI). When p is 1 in the following general formula (VI), 1,1,3 , 3-tetramethyl-1,3-bis (4-aminophenyl) disiloxane, 1,1,3,3-tetraphenoxy-1,3-bis (4-aminoethyl) disiloxane, 1,1,3 , 3-tetraphenyl-1,3-bis (2-aminoethyl) disiloxane, 1,1,3,3-tetraphenyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3 , 3-tetramethyl-1,3-bis (2-aminoethyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3 , 3-Tetramethyl-1,3-bis (3-aminobu E) Disiloxane, 1,3-dimethyl-1,3-dimethoxy-1,3-bis (4-aminobutyl) disiloxane and the like, and when p is 2, 1,1,3,3,5 , 5-hexamethyl-1,5-bis (4-aminophenyl) trisiloxane, 1,1,5,5-tetraphenyl-3,3-dimethyl-1,5-bis (3-aminopropyl) trisiloxane, 1,1,5,5-tetraphenyl-3,3-dimethoxy-1,5-bis (4-aminobutyl) trisiloxane, 1,1,5,5-tetraphenyl-3,3-dimethoxy-1, 5-bis (5-aminopentyl) trisiloxane, 1,1,5,5-tetramethyl-3,3-dimethoxy-1,5-bis (2-aminoethyl) trisiloxane, 1,1,5,5 -Tetramethyl-3,3-dimethoxy -1,5-bis (4-aminobutyl) trisiloxane, 1,1,5,5-tetramethyl-3,3-dimethoxy-1,5-bis (5-aminopentyl) trisiloxane, 1,1, 3,3,5,5-hexamethyl-1,5-bis (3-aminopropyl) trisiloxane, 1,1,3,3,5,5-hexaethyl-1,5-bis (3-aminopropyl) trisiloxane Examples include siloxane diamines such as siloxane and 1,1,3,3,5,5-hexapropyl-1,5-bis (3-aminopropyl) trisiloxane. These diamines can be used alone or in combination of two or more.

［式中、Ｑ^４及びＱ^９は各々独立に炭素数１〜５のアルキレン基又は置換基を有してもよいフェニレン基を示し、Ｑ^５、Ｑ^６、Ｑ^７、及びＱ^８は各々独立に炭素数１〜５のアルキル基、フェニル基又はフェノキシ基を示し、ｐは１〜５の整数を示す。］

[Wherein, Q ⁴ and Q ⁹ each independently represent an alkylene group having 1 to 5 carbon atoms or a phenylene group which may have a substituent, and Q ⁵ , Q ⁶ , Q ⁷ and Q ⁸ are each independently Represents an alkyl group having 1 to 5 carbon atoms, a phenyl group or a phenoxy group, and p represents an integer of 1 to 5. ]

  Moreover, said polyimide resin may mix (blend) individually or in mixture of 2 or more types as needed.

  The temperature at which the adhesive layer of the semiconductor chip with an adhesive layer obtained by the manufacturing method of the present embodiment can be pressure-bonded to the adherend is preferably 20 to 100 ° C. from the viewpoint of not damaging the circuit surface. ° C is more preferable, and 20-60 ° C is still more preferable. In order to enable pressure bonding at this temperature, the glass transition temperature (Tg) of the adhesive layer is preferably 10 to 100 ° C., and for that purpose, the Tg of the polyimide resin is adjusted to 10 to 100 ° C. It is preferably 10 to 60 ° C, more preferably 20 to 60 ° C. When the Tg of the polyimide resin exceeds 100 ° C., the possibility that the pressure bonding temperature may exceed 100 ° C. may increase. When the Tg is less than 10 ° C., the adhesive force on the surface of the adhesive layer becomes strong, and the handleability is increased. May get worse.

  Moreover, when determining the composition of the polyimide resin, it is preferably designed so that its Tg is 10 to 100 ° C. As the diamine that is a raw material of the polyimide resin, the fat represented by the following general formula (VII) It is preferable to use a group ether diamine. Specific examples include aliphatic diamines such as polyoxyalkylene diamines such as polyetheramine D-230, D-400, and D-2000 (all trade names, manufactured by BASF). These diamines are preferably 1 to 80 mol%, more preferably 5 to 60 mol% of the total diamine. If it is less than 1 mol%, it may be difficult to impart low-temperature adhesiveness and hot fluidity. If it exceeds 80 mol%, the Tg of the polyimide resin becomes too low, and the adhesive layer is easy to handle. May be damaged.

［式中、ｐは０〜８０の整数を示す。］

[In formula, p shows the integer of 0-80. ]

  The weight average molecular weight of the polyimide resin is preferably in the range of 20000 to 100,000, more preferably 30000 to 80000, and still more preferably 30000 to 60000. When the weight average molecular weight is in this range, good film formability, flexibility, and breakability can be obtained when the adhesive layer is formed, and good hot fluidity can be obtained. Therefore, it is possible to achieve both dicing properties and good embeddability to the steps present on the adherend. When the above weight average molecular weight is less than 20000, the film formability may be deteriorated, and the toughness may be reduced. When it exceeds 100000, the breakability and the hot fluidity may be reduced. In some cases, the dicing property, that is, the uncut portion due to ductility during dicing increases, or the embedding property of the adherend to the unevenness may decrease.

  By setting the Tg and weight average molecular weight of the polyimide resin within the above ranges, not only can the pressure bonding temperature to the adherend be kept low and the damage to the circuit surface can be suppressed, but also the warpage of the semiconductor element can be increased. Can be suppressed. Moreover, the favorable cut property at the time of dicing is securable. Moreover, when the said adherend is an organic substrate, vaporization of the moisture absorption of the organic substrate by the heating temperature at the time of die bonding can be suppressed, and foaming of the die bonding material layer by vaporization can be suppressed.

  In this specification, the glass transition temperature (Tg) is the main dispersion peak temperature when the adhesive composition is formed into a film. The main dispersion peak temperature was measured using a rheometric viscoelasticity analyzer RSA-2, and the film size was 35 mm long × 10 mm wide × 40 μm thick, the heating rate was 5 ° C./min, the frequency was 1 Hz, and the measurement temperature was −150 to 300. It is a tan δ peak temperature in the vicinity of Tg, measured under the condition of ° C. Moreover, a weight average molecular weight is a weight average molecular weight when it measures in polystyrene conversion using a high performance liquid chromatography (Shimadzu C-R4A).

  The (B) thermosetting resin is not particularly limited as long as it is a component composed of a reactive compound that undergoes a crosslinking reaction by heat. For example, epoxy resin, cyanate ester resin, maleimide resin, allyl nadiimide resin Phenol resin, urea resin, melamine resin, alkyd resin, acrylic resin, unsaturated polyester resin, diallyl phthalate resin, silicone resin, resorcinol formaldehyde resin, xylene resin, furan resin, polyurethane resin, ketone resin, triallyl cyanurate resin, Polyisocyanate resin, resin containing tris (2-hydroxyethyl) isocyanurate, resin containing triallyl trimellitate, thermosetting resin synthesized from cyclopentadiene, thermosetting by trimerization of aromatic dicyanamide Resin And the like. Among these, an epoxy resin, a maleimide resin, and an allyl nadiimide resin are preferable in that an excellent adhesive force at a high temperature can be given in combination with a polyimide resin. In addition, these thermosetting resins can be used individually by 1 type or in combination of 2 or more types.

  When using the above-mentioned thermosetting resin, the content is low outgassing property, film forming property (toughness), fluidity at the time of heat, and also the point that high adhesive force at high temperature by thermosetting can be effectively provided. (A) 1 to 200 parts by weight is preferable and 10 to 100 parts by weight is more preferable with respect to 100 parts by weight of the thermoplastic resin.

  A curing agent or a catalyst can be used for curing the thermosetting resin, and a curing agent and a curing accelerator, or a catalyst and a promoter can be used in combination as necessary. About the addition amount of the said hardening | curing agent and a hardening accelerator, and the presence or absence of addition, it adjusts in the range which can ensure the desired heat fluidity mentioned later and the heat resistance after hardening.

  As an epoxy resin which is one of the preferred thermosetting resins, those containing at least two epoxy groups in the molecule are more preferable, and phenol glycidyl ether type epoxy resins are extremely preferable in terms of curability and cured product characteristics. preferable. Examples of such resins include bisphenol A type (or AD type, S type, and F type) glycidyl ether, water-added bisphenol A type glycidyl ether, ethylene oxide adduct bisphenol A type glycidyl ether, and propylene oxide adduct. Bisphenol A type glycidyl ether, phenol novolac resin glycidyl ether, cresol novolac resin glycidyl ether, bisphenol A novolac resin glycidyl ether, naphthalene resin glycidyl ether, trifunctional (or tetrafunctional) glycidyl ether, dicyclo Glycidyl ether of pentadiene phenol resin, glycidyl ester of dimer acid, trifunctional (or tetrafunctional) glycidyl amine, glycidyl amine of naphthalene resin, etc. It is below. These can be used individually by 1 type or in combination of 2 or more types. In addition, it is preferable to use high-purity products in which the impurity ions such as alkali metal ions, alkaline earth metal ions, halogen ions, particularly chlorine ions and hydrolyzable chlorine are reduced to 300 ppm or less for these epoxy resins. This is preferable for prevention of corrosion and corrosion of metal conductor circuits.

  (B) When using said epoxy resin as a thermosetting resin, a hardening | curing agent can also be used as needed. Examples of the curing agent include phenolic compounds, aliphatic amines, alicyclic amines, aromatic polyamines, polyamides, aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, dicyandiamide, and organic acid dihydrazides. , Boron trifluoride amine complexes, imidazoles, tertiary amines and the like. Among these, phenol compounds are preferable, and phenol compounds having at least two phenolic hydroxyl groups in the molecule are more preferable. Examples of such compounds include phenol novolak resins, cresol novolak resins, t-butylphenol novolak resins, dicyclopentagencresol novolak resins, dicyclopentagen phenol novolak resins, xylylene-modified phenol novolak resins, naphthol compounds, trisphenols. Examples thereof include tetrakisphenol novolak resin, bisphenol A novolak resin, poly-p-vinylphenol resin, and phenol aralkyl resin. Among these, those having a number average molecular weight in the range of 400 to 1500 are preferable. Thereby, at the time of heating at the time of assembling the semiconductor device, it is possible to effectively reduce outgas that causes contamination of the semiconductor element or the device. In order to ensure the heat resistance of the cured product, the compounding amount of these phenolic compounds is such that the equivalent ratio of the epoxy equivalent of the epoxy resin and the OH equivalent of the phenolic compound is 0.95 to 1.05: Adjust to 0.95 to 1.05.

  Moreover, a hardening accelerator can also be used as needed. The curing accelerator is not particularly limited as long as it cures a thermosetting resin. For example, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4 -Methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate and the like.

  As the maleimide resin which is one of preferable (B) thermosetting resins, a compound containing two or more maleimide groups in the molecule is preferable, and a bismaleimide resin represented by the following general formula (VIII) or And a novolac maleimide resin represented by the formula (IX).

［式中、Ｒ_５は芳香族環及び／又は直鎖、分岐若しくは環状脂肪族炭化水素を含む２価の有機基を示す。］

[Wherein R ₅ represents a divalent organic group containing an aromatic ring and / or a linear, branched or cyclic aliphatic hydrocarbon. ]

［式中、ｎは０〜２０の整数を示す。］

[In formula, n shows the integer of 0-20. ]

R ₅ in the general formula (VIII) is not particularly limited as long as it is a divalent organic group containing an aromatic ring and / or a linear, branched or cyclic aliphatic hydrocarbon, but preferably Examples thereof include a benzene residue, a toluene residue, a xylene residue, a naphthalene residue, a linear, branched, or cyclic alkyl group, or a mixed group thereof, more preferably a divalent organic group having the following structure.

［式中、ｎは１〜１０の整数を示す。］

[Wherein n represents an integer of 1 to 10. ]

As R ₅ in the general formula (VIII), among the above organic groups, bismaleimide resin of the following structural formula (X) can be imparted with heat resistance and high-temperature adhesive force after curing of the adhesive layer, And / or the novolak-type maleimide resin of the following general formula (XI) is preferably used.

［式中、ｎは０〜２０の整数を示す。］

[In formula, n shows the integer of 0-20. ]

  For curing the maleimide resin, allylated bisphenol A, a cyanate ester compound and the like can be used in combination, and a catalyst such as a peroxide may be used. About the addition amount of the said compound and a catalyst, and the presence or absence of addition, it adjusts suitably in the range which can ensure the target characteristic.

  The preferred allyl nadiimide resin (B) is a compound containing two or more allyl nadimide groups in the molecule, and is a bisallyl nadiimide resin represented by the following general formula (XII) Is mentioned.

［式中、Ｒ_１は芳香族環及び／又は直鎖、分岐若しくは環状脂肪族炭化水素を含む２価の有機基を示す。］

[Wherein, R ₁ represents a divalent organic group containing an aromatic ring and / or a linear, branched or cyclic aliphatic hydrocarbon. ]

R ₁ in the above general formula (XII) is a divalent organic group containing an aromatic ring and / or a linear, branched or cyclic aliphatic hydrocarbon, preferably a benzene residue, a toluene residue, Examples include a xylene residue, a naphthalene residue, a linear, branched, or cyclic alkyl group, or a mixed group thereof, more preferably a divalent organic group having the following structure.

［式中、ｎは１〜１０の整数を示す。］

[Wherein n represents an integer of 1 to 10. ]

As R ₁ in the above general formula (XII), among the above organic groups, liquid hexamethylene-type bisallylnadiimide represented by the following structural formula (XIII), and low represented by the following structural formula (XIV) Melting point (melting point: 40 ° C.) Solid xylylene-type bisallyl nadiimide also acts as a compatibilizing agent between different components constituting the adhesive composition, and good heat flow at the B stage of the adhesive layer In addition to good heat fluidity, solid xylylene-type bisallyldiimide can suppress an increase in adhesiveness on the surface of the adhesive layer at room temperature, handling properties, and pickup It is more preferable in terms of easy detachment from the dicing tape and suppression of re-bonding of the cut surface after dicing. In addition, these bisallyl nadiimide can be used individually by 1 type or in combination of 2 or more types.

  The allyl nadiimide resin described above requires a curing temperature of 250 ° C. or higher when singly cured in the absence of a catalyst, which is a major obstacle to practical use. Only metal corrosive catalysts, which are a serious drawback in electronic materials such as onium salts and onium salts, can be used, and a temperature of around 250 ° C. is required for final curing. However, it can be cured at a low temperature of 200 ° C. or less by using any one of the above allyl nadiimide resin and a bifunctional or higher acrylate compound, a methacrylate compound, or a maleimide resin (reference: A. Renner, A. Kramer, “Allylnadic-Imides: A New Class of Heat-Resistant Thermosets”, J. Polym. Sci., Part A Polym. Chem., 27, 1301 (1989).

  The acrylate compound is not particularly limited as long as the number of acrylic functional groups in one molecule is 2 or more. For example, pentenyl acrylate, tetrahydrofurfuryl acrylate, diethylene glycol diacrylate, triethylene Glycol diacrylate, tetraethylene glycol diacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, ethylene oxide modified neopentyl glycol Acrylate, polypropylene glycol diacrylate, phenoxyethyl acrylate, tricyclodecane dimethylol diacrylate, di Trimethylolpropane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol hexaacrylate, tri acrylate tris (beta-hydroxyethyl) isocyanurate.

  The bifunctional or higher methacrylate compound is not particularly limited as long as the number of methacrylic functional groups in one molecule is 2 or more. For example, pentenyl methacrylate, tetrahydrofurfuryl methacrylate, diethylene glycol dimethacrylate, triethylene Glycol dimethacrylate, tetraethylene glycol dimethacrylate, trimethylolpropane dimethacrylate, trimethylolpropane trimethacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol dimethacrylate, polyethylene glycol dimethacrylate, ethylene oxide modified neopentyl glycol Methacrylate, polypropylene glycol dimethacrylate, phenoxyethyl methacrylate, tricyclodecane Methylol dimethacrylate, ditrimethylolpropane tetramethacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol hexa methacrylate, trimethacrylate of tris (beta-hydroxyethyl) isocyanurate. These acrylate compounds or methacrylate compounds can be used singly or in combination of two or more.

  (C) The solvent that can be removed by heating is not particularly limited as long as the material can be dissolved or dispersed uniformly. For example, dimethylformamide, toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, Examples include ethyl cellosolve acetate, dioxane, cyclohexanone, ethyl acetate, and N-methyl-pyrrolidinone.

  (C) It is preferable that content of the solvent which can be removed by heating is 10-1000 mass parts with respect to 100 mass parts of a thermoplastic resin. If it is 10 parts by mass or less, the film uniformity of the adhesive layer may not be obtained, and if it is 1000 parts by mass or more, it may be difficult to form a thick film.

  The viscosity of the adhesive composition is preferably 10 to 10000 mPa · s, more preferably 100 to 1000 mPa · s when measured at 27 ° C. using an E-type viscometer. As a result, the thickness of the adhesive layer can be made uniform and predetermined.

  The film thickness of the adhesive layer is preferably 1 to 5 μm. When the thickness is 1 μm or less, the adhesiveness to the adherend is lowered, and when the thickness is 5 μm or more, the thickness of the semiconductor chip with an adhesive layer is increased, and it is difficult to reduce the package.

  The tack strength at 30 ° C. of the adhesive layer is preferably 0.98 N or less, more preferably 0.49 N or less, and particularly preferably 0.20 N or less. The tack strength is the method described in JIS Z0237-1991 (probe diameter: 5.1 mm, peeling speed: 10 mm / second, contact load on the surface of the adhesive layer using a probe tacking tester manufactured by Reska. : 9.8 Pa, contact time: 1 second), the tack strength (adhesive strength) at 30 ° C. is measured.

  If the tack strength exceeds 0.98 N, the adhesive layer of the resulting adhesive layer has high surface tackiness at the room temperature, which may result in poor handling, and burrs are likely to remain due to a decrease in breakability due to ductility during dicing. In some cases, there may be a problem such as a decrease in peelability from the dicing sheet after dicing, or a decrease in pick-up property due to re-fusion of the cut surface of the adhesive layer after dicing. In addition, in this specification, room temperature is 5-30 degreeC.

  The adhesive composition preferably further contains (D) a colorant. The colorant may be a pigment or a dye, or a mixture thereof. By containing the colorant, it is possible to easily identify the adhesive layer having a small thickness, and it becomes easy to check a defective portion such as a void, thereby improving workability.

  The colorant preferably has heat resistance, and quinacridone, perylene, anthraquinone, and diketopyrrolopyrrole pigments are preferred. Also preferred are phthalocyanine and azo dyes.

  The content of the colorant is preferably 0.001 to 100 parts by weight, more preferably 0.01 to 10 parts by weight, and 0.05 to 5 parts by weight with respect to 100 parts by weight of the thermoplastic resin (A). Is most preferred. When it is 0.001 part by mass or less, coloring becomes insufficient and it becomes difficult to distinguish. Moreover, the adhesiveness of an adhesive bond layer may fall that it is 100 mass parts or more.

  The adhesive composition may contain an inorganic filler. Inorganic fillers include alumina, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, crystalline silica, amorphous silica, Fillers such as boron nitride, titania, glass, iron oxide, and ceramic can be used. These inorganic fillers can be used alone or in combination of two or more. Among these, silica is preferable because high adhesion can be obtained and impurities that cause metal corrosion can be reduced, so that the reliability of the semiconductor device can be improved. Moreover, it is preferable that the shape of the inorganic filler to be used is spherical in terms of thermal fluidity in the thickness direction of the adhesive layer and high adhesive force, as will be described later. The spherical shape includes shapes such as a true spherical shape, a circular granular shape, and an elliptical shape.

  The content of the inorganic filler is determined according to the properties and functions to be imparted, but when the (A) thermoplastic resin is 100 parts by mass, the mass part of the inorganic filler is preferably 1-1000 parts by mass, More preferably, it is 5-100 mass parts, and it is still more preferable that it is 5-50 mass parts. By appropriately increasing the amount of inorganic filler, the adhesive layer surface can be made less sticky and have a higher elastic modulus, dicing properties (cutability with a dicer blade), pick-up properties (easy release from dicing tape), wire Bondability (ultrasonic efficiency) and adhesive strength during heating can be effectively improved. If the amount of the inorganic filler is increased more than necessary, the interfacial adhesion with the adherend and the fluidity during heat are impaired, and the reliability including reflow resistance is reduced, so the amount of the inorganic filler used is within the above range. It is preferable to fit in. In order to balance the required characteristics, the optimum content of the inorganic filler is determined. Mixing and kneading in the case of using an inorganic filler can be carried out by appropriately combining ordinary stirrers, crackers, three-rollers, ball mills and other dispersers.

  The maximum particle size of the inorganic filler is preferably 5.0 μm or less, and more preferably 1.0 μm or less. A lower limit value of the minimum particle size is not particularly provided, but is preferably 0.001 μm or more. If the particle size is less than 0.001 μm, the interfacial area with the resin increases, dispersibility in the resin varnish decreases, and may cause a decrease in hot fluidity due to an increase in hot melt viscosity, When the particle size exceeds 5.0 μm, high adhesive strength may not be obtained, or the surface of the adhesive layer may become rough, and film formability may be impaired.

  The inorganic filler has at least two particle size distributions in a range where the maximum particle size is 5.0 μm or less, and the difference in particle size at which the frequency of each particle size distribution peaks is preferably 1 μm or more, preferably 2 μm or more. It is more preferable that In this way, by using together large and small inorganic fillers with different particle size distributions, the packing density of the inorganic filler in the adhesive layer is increased, surface tack after heating is reduced, cutting performance is improved during dicing, and the cut surface is re-cut after dicing. Effects such as fusion suppression can be obtained. Further, by using fillers having different particle sizes in combination, it is possible to effectively suppress an increase in hot melt viscosity after heating due to an increase in filler filling amount. That is, it is considered that the stress transmission effect in the thickness direction of the adhesive layer is increased when the resin is in a fluid state by thermocompression bonding.

  With the above design, the filler blending system can effectively achieve both low adhesion and hot fluidity, which are usually in a reciprocal relationship. This design also has the effect of increasing the filling density of the filler, and since the apparent area occupied by the resin can be reduced on the cut surface of the adhesive layer after dicing, the effect of suppressing re-bonding of the cut surface after dicing can be obtained. . In addition, the filler density is increased by using fillers with different particle diameters in combination, and the filler is a polishing agent against the dicing blade at the time of dicing due to the synergistic effect of the shape factor due to the mixture of different particle diameter fillers. It is considered that the polishing efficiency with respect to the cut surface of the adhesive layer during dicing is improved. When the difference between the particle sizes at which the frequency of each particle size distribution described above is a peak is less than 1 μm, it may be difficult to obtain these effects.

  As a method of giving the inorganic filler two particle size distributions, there is a method of using two inorganic fillers having different average particle sizes in addition to using a single inorganic filler designed to have two particle size distributions. In this case, it is preferable that the difference of the average particle diameter of each filler is 1 micrometer or more. Moreover, when using together 2 types of inorganic fillers, the average particle diameter of one filler may be 0.01-2.0 micrometers, and the average particle diameter of the other filler may be 2.0-10.0 micrometers. Preferably, the fillers are selected and combined so that the difference between the average particle diameters of both is 1 μm or more. If the average particle size of the filler is less than 0.01 μm or exceeds 10.0 μm, it may be unfavorable for the same reason as described above.

  When two kinds of fillers having different average particle diameters are used in combination, the ratio of the filler having a small average particle diameter is 10 to 70% by weight with respect to the whole filler, and the ratio of the filler having a large average particle diameter is 30% with respect to the whole filler. By adjusting in the range of ˜90% by weight, the above-mentioned effects can be effectively ensured. The particle size or average particle size of the filler is a value obtained when measuring the particle size distribution. The particle size distribution, particle size, and average particle size of the inorganic filler filled in the adhesive layer were determined by heating the adhesive composition in an oven at 600 ° C. for 2 hours to decompose and volatilize the resin component, and remove the remaining inorganic filler. It can be estimated by a method such as observation by SEM or calculation from the particle size distribution measurement.

  Various coupling agents can be added to the adhesive composition in order to improve interfacial bonding between different materials. Examples of the coupling agent include silane-based, titanium-based, and aluminum-based, and among these, a silane-based coupling agent is preferable because it is highly effective. The content of the coupling agent is preferably 0.01 to 20 parts by weight with respect to 100 parts by weight of the thermoplastic resin (A) from the viewpoint of the effect, heat resistance and cost.

  An ion scavenger can be further added to the adhesive composition in order to adsorb ionic impurities and improve insulation reliability during moisture absorption. There are no particular restrictions on the ion scavenger, for example, triazine thiol compounds, bisphenol-based reducing agents, such as compounds known as copper damage inhibitors to prevent copper ionization and dissolution, zirconium-based, antimony bismuth And inorganic ion adsorbents such as magnesium aluminum compounds. The content of the ion scavenger is preferably 0.01 to 10 parts by weight with respect to 100 parts by weight of the thermoplastic resin (A) from the viewpoint of the effect of addition, heat resistance, and cost.

  A softener, an anti-aging agent, a colorant, a flame retardant, a tackifier such as a terpene resin, and a thermoplastic polymer component may be appropriately added to the adhesive composition. Thereby, the adhesiveness improvement and the stress relaxation property at the time of hardening can be provided. Examples of the thermoplastic polymer component include polyvinyl butyral resin, polyvinyl formal resin, polyester resin, polyamide resin, polyimide resin, xylene resin, phenoxy resin, polyurethane resin, urea resin, and acrylic rubber. These polymer components preferably have a molecular weight of 5,000 to 500,000.

  The present invention provides a method for producing a thin semiconductor chip with an adhesive layer and a semiconductor device having the semiconductor chip with an adhesive layer obtained by this production method.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor wafer, 12 ... Circuit surface, 14 ... Circuit back surface, 16, 16a, 16b ... Semiconductor chip, 20 ... Back grind tape, 30 ... Back grinder, 40, 40a, 40b ... Adhesive layer, 50 ... Adhesive layer Semiconductor wafer with 60, Dicing tape, 70, 70a, 70b Semiconductor chip with adhesive layer, 80 Wire, 90 Terminal, 100 Support member, 110 Sealant.

Claims (8)

An application step of applying an adhesive composition containing a solvent on the other side of the semiconductor wafer having a circuit on one side;
An adhesive layer forming step of forming an adhesive layer by removing the solvent of the adhesive composition;
A cutting step of cutting the semiconductor wafer on which the adhesive layer is formed to obtain a semiconductor chip with an adhesive layer;
With
The adhesive composition includes (A) a thermoplastic resin, (B) a thermosetting resin, (C) the solvent that can be removed by heating, and an inorganic filler,
The manufacturing method of the semiconductor chip with an adhesive layer whose content of the said inorganic filler is 1-1000 mass parts with respect to 100 mass parts of (A) thermoplastic resins.   The said adhesive composition is a manufacturing method of Claim 1 whose viscosity measured at 27 degreeC using an E-type viscosity meter is 1000 mPa * s or less.   The manufacturing method according to claim 1 or 2, wherein the adhesive composition further contains (D) a colorant.   The said (A) thermoplastic resin is a manufacturing method as described in any one of Claims 1-3 containing the compound which has an imide skeleton in a molecule | numerator.   The glass transition temperature (Tg) of said (A) thermoplastic resin is a manufacturing method as described in any one of Claims 1-4 which is 10-100 degreeC.   The said adhesive bond layer is a manufacturing method as described in any one of Claims 1-5 which has a thickness of 1-5 micrometers.   The manufacturing method as described in any one of Claims 1-6 whose tack strength in 30 degreeC of the said adhesive bond layer is 0.98N or less. The semiconductor device which has a semiconductor chip with an adhesive layer obtained by the manufacturing method as described in any one of Claims 1-7.

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