JP2014225524A - Method for manufacturing detection device, detection device, and detection system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a detection device capable of suppressing influence of dark current and an increase in the time required for signal transmission.SOLUTION: A method for manufacturing a detection device including a conversion element having a pixel electrode 122, an impurity semiconductor part 123, and a semiconductor part 125 in this order on a substrate 100 from the substrate 100 side includes a step of covering a transparent conductive oxide to deposit an impurity semiconductor film 123' so that impurity concentration in a first region including a portion in contact with the transparent conductive oxide serving as the pixel electrode 122 in the impurity semiconductor film 123' serving as the impurity semiconductor part 123 becomes lower than impurity concentration in a second region deposited after the first region in the impurity semiconductor film.

Description

  The present invention relates to a detection apparatus manufacturing method, a detection apparatus, and a detection system that are applied to a medical diagnostic imaging apparatus, a nondestructive inspection apparatus, an analysis apparatus using radiation, and the like.

  In recent years, thin-film semiconductor manufacturing technology has been applied to detection devices having an array of pixels (pixel array) in which a switch element such as a TFT (thin film transistor) and a conversion element that converts radiation or light such as a photodiode into a charge are combined. It's being used. As a conventional detection device, Patent Document 1 discloses a switch element disposed on a substrate, a conversion element disposed on the switch element and electrically connected to the switch element, a substrate, the switch element, and the conversion element. And a detection device including an interlayer insulating layer disposed between the two. In addition, the conversion element of Patent Document 1 includes a pixel electrode electrically connected to the switch element, a counter electrode disposed to face the pixel electrode, and a semiconductor portion disposed between the pixel electrode and the counter electrode. And an impurity semiconductor portion disposed between the pixel electrode and the semiconductor portion. For this pixel electrode, a polycrystallized transparent conductive oxide is used for the purpose of improving the efficiency of light irradiation for reducing afterimages, etc. Further, the conversion element of Patent Document 1 includes a semiconductor portion and a pixel electrode. It is disclosed that a buffer layer may be provided to improve the adhesion to the substrate.

JP 2002-026300 A

  In the pixel electrode using the polycrystallized transparent conductive oxide, the surface may be uneven. Due to the unevenness, a defect occurs in the impurity semiconductor portion, and there is a possibility that the influence of dark current due to the defect may occur. Japanese Patent Application Laid-Open No. H10-260260 discloses that the surface irregularity of the pixel electrode is reduced by using an amorphous transparent conductive oxide for the pixel electrode. However, a pixel electrode using an amorphous transparent conductive oxide has a higher specific resistance than a pixel electrode using a polycrystallized transparent conductive oxide. As a result, there is a possibility that the time required for transferring the charge generated in the conversion element or a signal corresponding to the charge through the switch element becomes long. Therefore, an object of the present invention is to provide a detection device capable of suppressing the influence of dark current and an increase in time required for signal transfer.

  The manufacturing method of the detection device of the present invention is a manufacturing method of a detection device including a conversion element having a pixel electrode, an impurity semiconductor portion, and a semiconductor portion in order from the substrate side on a substrate, The impurity concentration in the first region including the portion in contact with the transparent conductive oxide serving as the pixel electrode in the impurity semiconductor film serving as the semiconductor portion is formed after the first region in the impurity semiconductor film. A step of forming the impurity semiconductor film so as to cover the transparent conductive oxide so as to be lower than the concentration of impurities in the second region; The manufacturing method of the detection device of the present invention is a manufacturing method of a detection device including a conversion element having a pixel electrode, an impurity semiconductor portion, and a semiconductor portion in order from the substrate side on a substrate, By forming a second impurity semiconductor film having the same polarity as the first impurity semiconductor film on the first impurity semiconductor film formed in contact with the transparent conductive oxide to be the pixel electrode, the transparent conductivity Including a step of forming an impurity semiconductor film to be the impurity semiconductor portion so as to cover the oxide, wherein the impurity concentration of the first impurity semiconductor film is lower than the impurity concentration of the second impurity semiconductor film. .

  The detection device of the present invention is a detection device detected by the above manufacturing method, and the detection system of the present invention includes the detection device, signal processing means for processing a signal from the detection device, and the signal Recording means for recording a signal from the processing means, display means for displaying the signal from the signal processing means, and transmission processing means for transmitting the signal from the signal processing means .

  According to the present invention, it is possible to provide a detection device capable of suppressing the influence of dark current and an increase in time required for signal transfer.

It is the plane schematic diagram and cross-sectional schematic diagram per pixel of the detection apparatus which concerns on 1st Embodiment. It is the cross-sectional schematic diagram and mask pattern for demonstrating the manufacturing method of the detection apparatus which concerns on 1st Embodiment. It is the cross-sectional schematic diagram and mask pattern for demonstrating the manufacturing method of the detection apparatus which concerns on 1st Embodiment. It is the plane schematic diagram and cross-sectional schematic diagram per pixel of the detection apparatus which concerns on the other example of 1st Embodiment. It is the plane schematic diagram and cross-sectional schematic diagram per pixel of the detection apparatus which concerns on 2nd Embodiment. It is a cross-sectional schematic diagram and a mask pattern for demonstrating the manufacturing method of the detection apparatus which concerns on 2nd Embodiment. It is the plane schematic diagram and cross-sectional schematic diagram per pixel of the detection apparatus which concerns on 3rd Embodiment. It is a cross-sectional schematic diagram and a mask pattern for demonstrating the manufacturing method of the detection apparatus which concerns on 3rd Embodiment. It is a conceptual diagram of the radiation detection system using the detection apparatus of this invention.

  Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings. In this specification, in addition to α-rays, β-rays, γ-rays, etc., which are beams produced by particles (including photons) emitted by radioactive decay, beams having the same or higher energy, such as X-rays, Particle rays and cosmic rays are also included in the radiation.

(First embodiment)
First, the detection apparatus according to the first embodiment will be described with reference to FIGS. FIG. 1A is a schematic plan view of one pixel constituting the detection device, and FIG. 1B is a schematic cross-sectional view taken along line AA ′ of FIG. In FIG. 1A, for the sake of simplicity, only the pixel electrode is shown as the conversion element.

  In the detection device of the present invention, a plurality of pixels 11 are arranged on a substrate 100. As shown in FIGS. 1A and 1B, one pixel 11 is a conversion element 12 that converts radiation or light into electric charge, and a switch element that outputs an electric signal corresponding to the electric charge of the conversion element 12. TFT (thin film transistor) 13. In this embodiment, an amorphous silicon PIN photodiode is used as the conversion element 12. The conversion element 12 is disposed on a TFT 13 provided on an insulating substrate 100 such as a glass substrate, with an interlayer insulating layer 120 made of an organic material interposed therebetween. The interlayer insulating layer 120 is disposed so as to cover the plurality of TFTs 13 which are a plurality of switch elements. As shown in FIG. 1B, the surface of the interlayer insulating layer 120 is covered with a covering member 121 and a pixel electrode 122 made of an inorganic material.

  The TFT 13 includes a control electrode 131, an insulating layer 132, a semiconductor layer 133, an impurity semiconductor layer 134 having an impurity concentration higher than that of the semiconductor layer 133, and a first main layer, which are arranged on the substrate 100 in order from the substrate side. An electrode 135 and a second main electrode 136 are included. The impurity semiconductor layer 134 is in contact with the first main electrode 135 and the second main electrode 136 in a partial region thereof, and a region between the regions of the semiconductor layer 133 in contact with the partial region is a channel region of the TFT. The control electrode 131 is electrically connected to the control wiring 15, the first main electrode 135 is electrically connected to the signal wiring 16, and the second main electrode 136 is electrically connected to the pixel electrode 122 of the conversion element 12. It is connected to the. In the present embodiment, the first main electrode 135, the second main electrode 136, and the signal wiring 16 are integrally formed of the same conductive layer, and the first main electrode 135 constitutes a part of the signal wiring 16. ing. The protective layer 137 is provided so as to cover the TFT 13, the control wiring 15, and the signal wiring 16. In this embodiment, an inverted stagger type TFT using the semiconductor layer 133 and the impurity semiconductor layer 134, which are mainly made of amorphous silicon, is used as the switch element. However, the present invention is not limited to this. For example, a staggered TFT mainly composed of polycrystalline silicon, an organic TFT, an oxide TFT, or the like can be used.

  The interlayer insulating layer 120 is disposed between the substrate 100 and a pixel electrode 122 of the conversion element 12 described later so as to cover the plurality of TFTs 13 and has a contact hole. The pixel electrode 122 of the conversion element 12 and the second main electrode 136 of the TFT 13 are electrically connected in a contact hole provided in the interlayer insulating layer 120.

The conversion element 12 is arranged on the interlayer insulating layer 120 in order from the interlayer insulating layer side (substrate side), the pixel electrode 122, the first conductivity type impurity semiconductor portion 123, the semiconductor portion 125, and the second A conductive impurity semiconductor portion 126 and a counter electrode 127 are included. The pixel electrode 122 is made of a polycrystallized transparent conductive oxide for the purpose of improving the efficiency of light irradiation for reducing afterimages and reducing the resistance. A light source (not shown) for irradiating light for reducing afterimages can be provided on the surface side of the substrate 100 facing the surface on which the pixels 11 are arranged. In the present embodiment, ITO is used as the transparent conductive oxide, but the present invention is not limited thereto, as long as it has a transmittance of 20% or more with respect to the light emitted from the light source, In addition to ITO, ZnO, SnO ₂ , CuAlO _{2 and the} like are preferably used. The first conductivity type impurity semiconductor portion 123 has a first conductivity type polarity and has a higher concentration of first conductivity type impurities than the semiconductor portion 124 and the second conductivity type impurity semiconductor portion 126. In addition, the second conductivity type impurity semiconductor part 126 has a second conductivity type polarity and has a higher concentration of second conductivity type impurities than the first conductivity type impurity semiconductor part 123 and the semiconductor part 124. This corresponds to another impurity semiconductor portion of the present invention. The first conductivity type and the second conductivity type are conductivity types having different polarities, and in this embodiment, the first conductivity type is n-type and the second conductivity type is p-type. However, the present invention is not limited thereto, and the first conductivity type may be p-type and the second conductivity type may be n-type. The electrode wiring 14 is electrically connected to the counter electrode 127 of the conversion element 12. The pixel electrode 122 of the conversion element 12 is electrically connected to the second main electrode 136 of the TFT 13 through a contact hole provided in the interlayer insulating layer 120. In this embodiment, the photodiode using the first conductivity type impurity semiconductor portion 123, the semiconductor portion 125, and the second conductivity type impurity semiconductor portion 126, which is mainly made of amorphous silicon, is used. The invention is not limited to this. For example, an element that directly converts radiation into an electric charge using the first conductive type impurity semiconductor portion 123, the semiconductor portion 125, and the second conductive type impurity semiconductor portion 126 that are mainly made of amorphous selenium can be used. . The counter electrode 127 is disposed to face the pixel electrode 122 and is electrically connected to the electrode wiring 14. In the present embodiment, the surface of the interlayer insulating layer 120 is covered with the pixel electrode 122 and the covering member 121 made of an inorganic material. Therefore, exposure of the surface of the interlayer insulating layer 120 is suppressed when an impurity semiconductor film to be the impurity semiconductor portion 123 is formed by a CVD method, a vapor deposition method, a sputtering method, or the like. Therefore, mixing of the organic material into the impurity semiconductor portion 123 can be reduced. In this embodiment, the impurity semiconductor portion 123, the semiconductor portion 125, and the impurity semiconductor portion 126 are separated or removed for each pixel on the covering member 121 that covers the surface of the interlayer insulating layer 120 with the pixel electrode 122. Yes. At the time of separation or removal, the covering member 121 serves as an etching stopper layer. Therefore, it is possible to suppress contamination of the conversion element by the organic material without exposing the interlayer insulating layer 120 to the dry etching species. And the passivation layer 128 is provided so that the electrode wiring 14, the conversion element 12, and the coating | coated member 121 may be covered.

  Next, the manufacturing method of the detection apparatus in 1st Embodiment is demonstrated using FIGS. In particular, the process of forming the pixel electrode 122 will be described in detail using a mask pattern and a cross-sectional view during the process. 2 (a), 2 (c), 3 (a), and 3 (c) are schematic cross-sectional views in each step at a position corresponding to AA ′ in FIG. 1 (a). is there. 2B, FIG. 2D, FIG. 3B, and FIG. 3D are schematic plan views of a mask pattern of a photomask used in each process in the pixel of FIG. 1A, respectively. It is.

  First, the TFT 13 is provided on the insulating substrate 100, and a protective film is formed so as to cover the TFT 13. Then, an acrylic resin, which is a photosensitive organic insulating material, is formed as an interlayer insulating film using a coating device such as a spinner so as to cover the TFT 13 and the protective film. In addition, polyimide resin or the like can be used as the organic material having photosensitivity. Then, the protective layer 137 and the interlayer insulating layer 120 having contact holes are formed by exposure and development using a desired mask. Next, in the process illustrated in FIG. 2A, a conductive film is formed so as to cover the interlayer insulating layer 120. Then, the conductive film is etched using the mask shown in FIG. 2B to form the pixel electrode 122 of the conversion element. In this embodiment, an amorphous transparent conductive oxide film made of ITO is used as the conductive film, and the transparent conductive oxide film is wet-etched using the mask shown in FIG. The pixel electrode 122 of the conversion element is formed by being polycrystallized by annealing treatment. Further, wet etching may be performed using a hydrofluoric acid-based etchant to remove the surface oxide of the pixel electrode 122.

  Next, in the step shown in FIG. 2C, an insulating film made of an inorganic material such as a silicon nitride film or silicon oxide is formed by plasma CVD so as to cover the interlayer insulating layer 120 and the pixel electrode 122. Then, the insulating film is etched using the mask illustrated in FIG. 2D, and the covering member 121 is formed so as to cover the region of the surface of the interlayer insulating layer 120 that is not covered with the pixel electrode 122. As a result, the surface of the interlayer insulating layer 120 is covered with the covering member 121 and the pixel electrode 122. In the present embodiment, an example in which the covering member 121 is formed using an inorganic insulating material has been described. However, the present invention is not limited thereto, and any inorganic film that can cover the surface may be used. For example, in the covering member 121, a region in contact with the pixel electrode 122 and the impurity semiconductor portion 123 may be formed using an inorganic insulating material, and the other region may be formed using an inorganic conductive material such as ITO, Al, or Cu. In the present embodiment, the covering member 121 is formed so as to cover the step of the protective layer 137 and the step of the interlayer insulating layer 120 in the contact hole of the interlayer insulating layer 120. Accordingly, the second main electrode 136 and the protective layer 137 are suppressed from being exposed to etching, and the second main electrode 136 and the protective layer 137 can be protected.

Next, in the step shown in FIG. 3A, n in which phosphorus, which is a pentavalent element, is mixed as an impurity as the first conductivity type impurity semiconductor film 123 ′ so as to cover the covering member 121 and the pixel electrode 122. A type amorphous silicon film is formed by plasma CVD. Specifically, a plasma CVD apparatus using SiH ₄ as the main source gas, PH ₃ as the auxiliary source gas, and H ₂ as the dilution gas is used. Here, when the first conductive type impurity semiconductor film 123 ′ is formed, the surface of the transparent conductive oxide may be reduced, and irregularities may be generated on the surface of the transparent conductive oxide. If this unevenness becomes too large, defects such as defects may occur in the impurity semiconductor film 123 ′ to be formed, and there is a possibility that the influence of dark current due to the defects may occur. Therefore, the impurity semiconductor film 123 ′ is formed so as to suppress energy for reducing the surface of the transparent conductive oxide. When the impurity semiconductor film 123 ′ is formed so as to suppress energy for reducing the surface of the transparent conductive oxide, the concentration of phosphorus that is an impurity in the impurity semiconductor film 123 ′ is lowered. That is, the impurity concentration in the first region including the portion in contact with the transparent conductive oxide in the impurity semiconductor film 123 ′ to be the impurity semiconductor portion 123 is formed with energy that can suppress reduction of the surface of the transparent conductive oxide. It is desirable that it be low. However, if such an impurity semiconductor film 123 ′ is formed over the entire area of the impurity semiconductor portion 123, the impurity concentration is low throughout the impurity semiconductor portion 123, and the reverse bias of the PIN photodiode is applied. The reverse saturation current, i.e. dark current, increases. Further, when the impurity concentration of the impurity semiconductor portion 123 is low, the specific resistance of the impurity semiconductor portion 123 increases. Therefore, it is desirable that a sufficient impurity concentration is ensured when viewed over the entire impurity semiconductor portion 123. Therefore, it is desirable that the impurity concentration in the second region formed after the first region in the impurity semiconductor film 123 ′ is high so that an increase in dark current and an increase in specific resistance can be suppressed. That is, the impurity concentration in the first region including the portion in contact with the transparent conductive oxide in the impurity semiconductor film 123 ′ is lower than the impurity concentration in the second region formed after the first region. It is desirable to form the impurity semiconductor film 123 ′. A first example of forming such an impurity semiconductor film 123 ′ by a CVD method using a main source gas, a sub source gas, and a dilution gas is a main source gas for forming the first region. Is made higher than the partial pressure of the main source gas when the second region is formed. A second example is to control the film formation temperature. Specifically, the film formation temperature for forming the first region is set lower than the film formation temperature for forming the second region. In the first example and the second example, the deposition rate of the impurity semiconductor film is increased, the time during which the transparent conductive oxide is exposed during the film formation can be shortened, and the surface of the transparent conductive oxide is reduced. It becomes possible to suppress the reduction of. In the third example, the power (RF power) input between the anode electrode and the cathode electrode of the CVD apparatus when the first region is formed by the CVD method, and the power input when the second region is formed. Lower than. In the present embodiment, a plasma CVD apparatus is used as the CVD apparatus. In the second and third examples, the main raw material gas, SiH ₄ , the auxiliary raw material gas, PH ₃ , the diluent gas, H ₂ , or various ions generated based on them are transparent. The energy given to the surface of the conductive oxide is lowered. Thereby, it becomes possible to suppress reduction of the surface of the transparent conductive oxide. By controlling the above-described conditions for forming the impurity semiconductor film 123 ′ in this way, the impurity concentration in the first region is low, and the impurity concentration in the second region formed after the first region is high. Thus, the impurity semiconductor film 123 can be formed. Here, the concentration of phosphorus, which is the first conductivity type impurity in the first region, is desirably less than 1.0 × 10 ²¹ [atoms / cc] by SIMS (Secondary Ion Mass Spectrometry) analysis. In this case, the electric conductivity of the first region is less than 5.0 × 10 ⁻⁴ [(Ωcm) ⁻¹ ], and the activation energy is less than 0.3 [eV]. In addition, since there is a correlation between the impurity concentration and the hydrogen concentration in the amorphous silicon, the hydrogen concentration in the first region is 1.0 × 10 ²² [atoms / cc] or more by SIMS analysis. Further, the phosphorus concentration in the second region is preferably 1.0 × 10 ²¹ [atoms / cc] or more by SIMS analysis. In this case, the electric conductivity of the second region is 5.0 × 10 ⁻⁴ [(Ωcm) ⁻¹ ] or more, the activation energy of the second region is 1.0 × 10 ²² [eV] or more, and the second region The concentration of hydrogen in the region is less than 1.0 × 10 ²² [atoms / cc]. The control of the conditions listed in the first to third examples may be performed gradually, or may be performed instantaneously at a certain time. That is, the impurity concentration of the impurity semiconductor film 123 ′ may change gradually or may change sharply. In the case of abrupt change, the impurity semiconductor film has a multilayer structure, and an impurity semiconductor portion is constituted by the first impurity semiconductor layer 123a and the second impurity semiconductor layer 124, for example, as shown in FIG. In this case, first, a first impurity semiconductor film to be the first impurity semiconductor layer 123a is formed in contact with the transparent conductive oxide to be the pixel electrode 122. Next, a second impurity semiconductor film having the same polarity as the first impurity semiconductor film is formed on the first impurity semiconductor film, thereby forming an impurity semiconductor film that covers the transparent conductive oxide and becomes the impurity semiconductor portion. It will be filmed.

  Returning to FIG. 3A, following the impurity semiconductor film 123 ′, a semiconductor film 125 ′ made of an amorphous silicon film, and boron, which is a trivalent element, as an impurity semiconductor film 126 ′ of the second conductivity type are used as impurities. The mixed amorphous silicon film is formed in this order by the plasma CVD method.

  Next, a conductive film such as Al to be the electrode wiring 14 is formed by sputtering so as to cover the impurity semiconductor film 126 '. Then, the conductive film is wet etched using the mask shown in FIG. 3B to form the electrode wiring 14.

  Note that when the impurity semiconductor film 123 ′ is formed, if the interlayer insulating layer 120 is not covered with the covering member 121 and the pixel electrode 122, the interlayer insulating layer 120 is exposed to plasma. When the interlayer insulating layer 120 made of an organic material is exposed to this plasma, the organic material may be scattered and mixed into the impurity semiconductor film 123 ′. Therefore, in this embodiment, the interlayer insulating layer 120 is covered with the covering member 121 and the pixel electrode 122 so that the surface of the interlayer insulating layer 120 is not exposed when the impurity semiconductor film 123 ′ is formed. Accordingly, the organic material can be prevented from being scattered and mixed into the impurity semiconductor film 123 ′.

  Next, in the step shown in FIG. 3C, a transparent conductive oxide film is formed by sputtering so as to cover the impurity semiconductor film 126 ′ and the electrode wiring 14. Next, the transparent conductive oxide film is wet-etched using the mask shown in FIG. 3D to form the counter electrode 127 of the conversion element 12. Then, the impurity semiconductor film 126 ′, the semiconductor film 125 ′, and the impurity semiconductor film 123 ′ are removed by dry etching using the same mask shown in FIG. To do. An impurity semiconductor portion 126, a semiconductor portion 125, and an impurity semiconductor portion 123 are formed in the element 12 that has been isolated. Pixel separation by this dry etching is performed on the covering member 121. Therefore, the covering member 121 functions as an etching stopper layer, and the interlayer insulating layer 120 is not exposed to the dry etching species, and contamination of each layer by the organic material can be prevented. Further, the pixel electrode 122 has a shape covered with the impurity semiconductor portion 123. Therefore, the pixel electrode 122 and the semiconductor layer 124 are not directly connected to the Schottky connection. In the present embodiment, the transparent conductive oxide is used as the material of the counter electrode 126. However, the present invention is not limited thereto, and any conductive film may be used. For example, when an element that directly converts radiation into electric charge is used as the conversion element, a conductive film that easily transmits radiation such as Al can be used. And the passivation layer 128 is formed so that the conversion element 12 and the coating | coated member 121 may be covered, and the structure shown in FIG.1 (b) is obtained.

(Second Embodiment)
Next, a detection apparatus according to the second embodiment will be described with reference to FIGS. FIG. 5A is a schematic plan view of one pixel constituting the detection device, and FIG. 5B is a schematic cross-sectional view taken along the line BB ′ of FIG. In FIG. 5A, for the sake of simplicity, only the pixel electrode is shown as the conversion element. In addition, the same thing as what was demonstrated in previous embodiment attaches | subjects the same number, and omits detailed description.

  In the present embodiment, in addition to the configuration of the first embodiment shown in FIG. 4, a metal member 129 is provided on part of the surface of the pixel electrode 122. The metal member 129 is disposed so as to be in direct contact with the second impurity semiconductor layer 124, which is the second region of the impurity semiconductor portion, and the pixel electrode 122. As described in the first embodiment, in order to suppress reduction of the surface of the transparent conductive oxide, if the impurity concentration of the first impurity semiconductor layer 123a that is the first region of the impurity semiconductor portion is reduced, Mobility can be reduced. Therefore, in the present embodiment, the second impurity semiconductor layer 124, which is a second region having a higher impurity concentration than the first region, is provided so as to be in direct contact with the metal member 129 provided in contact with the pixel electrode 122. . Thereby, a decrease in carrier mobility due to the first impurity semiconductor layer 123a can be suppressed. In addition, since the metal material used for the metal member 129 generally has higher adhesion to an impurity semiconductor layer having a high impurity concentration and durability against the formation of the impurity semiconductor film than the transparent conductive oxide, A conversion element having stable characteristics can be obtained. As a material of the metal member 129, Al, Cu, Mo, W, an alloy thereof, or a laminate of a plurality of materials can be used. In this embodiment, Mo that can be resistively connected to the impurity semiconductor layer 124 is used. Is used.

  Next, the manufacturing method of the detection apparatus in 2nd Embodiment is demonstrated using Fig.6 (a)-(f). Detailed description of the same steps as those described in the first embodiment is omitted. In particular, the steps described with reference to FIGS. 2A and 2B up to the step of forming the pixel electrode 122 and the steps after the formation of the covering member 121 and the first region are illustrated in FIGS. ) Are the same as those described with reference to), and other steps will be described. FIG. 6A, FIG. 6C, and FIG. 6E are schematic cross-sectional views in each step at a position corresponding to B-B ′ in FIG. FIGS. 6B, 6D, and 6F are schematic plan views of a mask pattern of a photomask used in each process in the pixel of FIG. 5A.

  In the step shown in FIG. 6A, a pentavalent impurity semiconductor film 123′a is formed so as to cover the interlayer insulating layer 120 and the pixel electrode 122 formed as shown in FIG. An amorphous silicon film mixed with phosphorus, which is an element, as an impurity is formed by a plasma CVD method. The conditions for forming the impurity semiconductor film 123'a are the same as those of the first region of the impurity semiconductor film 123 'of the first embodiment or the first impurity semiconductor film 123'. Next, using the same mask shown in FIG. 6B, the impurity semiconductor film 123'a is removed by dry etching to form a first impurity semiconductor layer 123a.

  Next, in a process illustrated in FIG. 6C, a metal film containing Mo is formed by a sputtering method so as to cover the interlayer insulating layer 120, the pixel electrode 122, and the first impurity semiconductor layer 123a. Then, the metal film is wet etched using the mask shown in FIG.

  Next, in the step shown in FIG. 6E, a common material such as a silicon nitride film or silicon oxide is formed so as to cover the interlayer insulating layer 120, the pixel electrode 122, the first impurity semiconductor layer 123a, and the metal member 129a. An insulating film made of an inorganic material is formed by a plasma CVD method. Then, the insulating film is etched using the mask shown in FIG. 6F, and the covering member 121 is formed so as to cover the region of the surface of the interlayer insulating layer 120 that is not covered with the pixel electrode 122. Thereafter, phosphorus, which is a pentavalent element, is mixed as an impurity as the first conductivity type impurity semiconductor film 124 ′ so as to cover the pixel electrode 122, the first impurity semiconductor layer 123a, the metal member 129a, and the covering member 121. The amorphous silicon film thus formed is formed by plasma CVD. The conditions for forming the impurity semiconductor film 124 ′ are the same as those for the second region or the second impurity semiconductor film 124 ′ of the impurity semiconductor film 123 ′ of the first embodiment. As a result, the impurity semiconductor film 124 ′ that becomes the second region of the impurity semiconductor layer is formed so as to be in contact with the metal member 129 that is in contact with the transparent conductive oxide of the pixel electrode 122. Thereafter, the same process as the process after the formation of the semiconductor film 125 ′ described with reference to FIGS. 3A to 3D is performed, and the structure shown in FIG. 5B is obtained.

(Third embodiment)
Next, a detection apparatus according to the third embodiment will be described with reference to FIGS. FIG. 7A is a schematic plan view of one pixel constituting the detection device, and FIG. 7B is a schematic cross-sectional view taken along CC ′ in FIG. In FIG. 7A, only the pixel electrode is shown as the conversion element for the sake of simplicity. In addition, the same thing as what was demonstrated in 1st Embodiment is provided with the same number, and detailed description is omitted.

  In the present embodiment, the semiconductor film 125 ′ is used as it is as the semiconductor portion in place of the semiconductor portion 125 of the first embodiment shown in FIGS. Further, in place of the second conductivity type impurity semiconductor portion 127, the impurity semiconductor film 126 'is used as it is as the second conductivity type impurity semiconductor portion. That is, the semiconductor portion of the conversion element 12 and the second conductivity type impurity semiconductor portion are not separated for each pixel.

  Next, the manufacturing method of the detection device in the third embodiment will be described with reference to FIGS. Detailed description of the same steps as those described in the first embodiment is omitted. In particular, the steps up to forming the pixel electrode 122 and the covering member 121 are the same as those described with reference to FIGS. 2A to 2D, and the other steps will be described. 8A, FIG. 8C, and FIG. 8E are schematic cross-sectional views in the respective processes at positions corresponding to C-C ′ in FIG. 7A. FIG. 8B, FIG. 8D, and FIG. 8F are schematic plan views of the mask pattern of the photomask used in each step in the pixel of FIG. 7A, respectively.

  In the step shown in FIG. 8A, similarly to the first embodiment, phosphorus, which is a pentavalent element, is formed as the first conductivity type impurity semiconductor film 123 ′ so as to cover the covering member 121 and the pixel electrode 122. An amorphous silicon film mixed with impurities as an impurity is formed by plasma CVD. Then, the impurity semiconductor film 123 ′ is removed by dry etching using the mask shown in FIG. 8B, thereby forming the first conductivity type impurity semiconductor portion 123 separated for each pixel.

  Next, in the step shown in FIG. 8C, a semiconductor film 125 ′ made of an amorphous silicon film is formed in this order by plasma CVD so as to cover the impurity semiconductor portion 123 and the covering member 121. Subsequently, an amorphous silicon film in which boron, which is a trivalent element, is mixed as an impurity is formed as a second conductive type impurity semiconductor film 126 ′ by plasma CVD. Next, a conductive film such as Al to be the electrode wiring 14 is formed by sputtering so as to cover the impurity semiconductor film 126 '. Then, the conductive film is wet etched using the mask shown in FIG. 8D to form the electrode wiring 14.

  Next, in the step shown in FIG. 8E, a transparent conductive oxide film is formed by a sputtering method so as to cover the impurity semiconductor film 126 ′ and the electrode wiring 14. Next, the transparent conductive oxide film is wet-etched using the mask shown in FIG. 3D to form the counter electrode 127 of the conversion element 12. Then, a passivation layer 128 is formed so as to cover the impurity semiconductor film 126 ′ and the counter electrode 127, and the configuration shown in FIG. 7B is obtained. In this embodiment, the counter electrode 127 is separated for each pixel. However, the present invention is not limited to this, and the counter electrode 127 may not be separated for each pixel.

(Application embodiment)
Next, a radiation detection system using the detection apparatus of the present invention will be described with reference to FIG.

  X-rays 6060 generated by an X-ray tube 6050 serving as a radiation source pass through the chest 6062 of the patient or subject 6061 and enter each conversion element included in the radiation detection device 6040. This incident X-ray includes information inside the body of the patient 6061. Corresponding to the incidence of X-rays, the conversion unit 3 converts the radiation into electric charges to obtain electrical information. This information is converted into digital data, image-processed by an image processor 6070 as a signal processing means, and can be observed on a display 6080 as a display means in a control room.

  Further, this information can be transferred to a remote place by transmission processing means such as a telephone line 6090, and can be displayed on a display 6081 serving as a display means such as a doctor room in another place or stored in a recording means such as an optical disk. It is also possible for a doctor to make a diagnosis. Moreover, it can also record on the film 6110 used as a recording medium by the film processor 6100 used as a recording means.

DESCRIPTION OF SYMBOLS 11 Pixel 12 Conversion element 13 Switch element 14 Electrode wiring 15 Control wiring 16 Signal wiring 100 Substrate 120 Interlayer insulating layer 121 Cover member 122 Pixel electrode 123 ′ First conductive type impurity semiconductor film 125 ′ Semiconductor film 126 ′ Second conductive type Impurity semiconductor film 127 Counter electrode

Claims (20)

A manufacturing method of a detection device including a conversion element having a pixel electrode, an impurity semiconductor portion, and a semiconductor portion in order from the substrate side on a substrate,
The impurity concentration in the first region including the portion in contact with the transparent conductive oxide serving as the pixel electrode in the impurity semiconductor film serving as the impurity semiconductor portion is formed after the first region in the impurity semiconductor film. A method for manufacturing a detection device, comprising: forming the impurity semiconductor film so as to cover the transparent conductive oxide so as to be lower than the concentration of impurities in the second region. The film forming step is performed by a CVD method using a main source gas, a sub source gas, and a dilution gas,
The method for manufacturing a detection device according to claim 1, wherein a film formation temperature when forming the first region is lower than a film formation temperature when forming the second region. The film forming step is performed by a CVD method using a main source gas, a sub source gas, and a dilution gas,
The electric power supplied between the anode electrode and the cathode electrode of the CVD apparatus when forming the first region is supplied between the anode electrode and the cathode electrode of the CVD device when forming the second region. The method of manufacturing a detection apparatus according to claim 1, wherein the detection apparatus is lower than electric power. The film forming step is performed by a CVD method using a main source gas, a sub source gas, and a dilution gas,
2. The partial pressure of the main source gas when forming the first region is higher than a partial pressure of the main source gas when forming the second region. A method for manufacturing a detection device. A manufacturing method of a detection device including a conversion element having a pixel electrode, an impurity semiconductor portion, and a semiconductor portion in order from the substrate side on a substrate,
The second region is formed after the first region including the portion in contact with the transparent conductive oxide to be the pixel electrode is formed by the CVD method using the main source gas, the auxiliary source gas, and the dilution gas. A step of forming an impurity semiconductor film to be the impurity semiconductor portion,
A method for manufacturing a detection apparatus, wherein a film formation temperature when forming the first region is lower than a film formation temperature when forming the second region. A manufacturing method of a detection device including a conversion element having a pixel electrode, an impurity semiconductor portion, and a semiconductor portion in order from the substrate side on a substrate,
The second region is formed after the first region including the portion in contact with the transparent conductive oxide to be the pixel electrode is formed by the CVD method using the main source gas, the auxiliary source gas, and the dilution gas. A step of forming an impurity semiconductor film to be the impurity semiconductor portion,
The electric power supplied between the anode electrode and the cathode electrode of the CVD apparatus when forming the first region is the electric power supplied between the anode electrode and the cathode electrode of the CVD device when forming the second region The manufacturing method of the detection apparatus characterized by the above-mentioned. A manufacturing method of a detection device including a conversion element having a pixel electrode, an impurity semiconductor portion, and a semiconductor portion in order from the substrate side on a substrate,
The second region is formed after the first region including the portion in contact with the transparent conductive oxide to be the pixel electrode is formed by the CVD method using the main source gas, the auxiliary source gas, and the dilution gas. A step of forming an impurity semiconductor film to be the impurity semiconductor portion,
A method of manufacturing a detection device, wherein a partial pressure of the main source gas when forming the first region is higher than a partial pressure of the main source gas when forming the second region.   The method for manufacturing a detection device according to claim 2, wherein the transparent conductive oxide is polycrystallized, and the CVD apparatus is a plasma CVD apparatus. The method of manufacturing a detection apparatus according to claim 8, wherein the main raw material gas includes SiH ₄ , and the dilution gas includes H ₂ .   The said conversion element further has the other impurity semiconductor part from which the polarity differs from the said impurity semiconductor part between the said semiconductor part and the said counter electrode, The any one of Claim 1 to 9 characterized by the above-mentioned. A method for producing the detection device according to 1. The method of manufacturing a detection apparatus according to claim 10, wherein the auxiliary source gas contains PH ₃ , and the impurity semiconductor portion is made of n-type amorphous silicon.   2. The film forming step is characterized in that the impurity semiconductor film is formed so that the second region is in contact with a metal member formed in contact with a part of the transparent conductive oxide. The manufacturing method of the detection apparatus of any one of 1-11. The detection device includes a switch element disposed between the substrate and the pixel electrode, and an interlayer insulating layer disposed between the substrate and the switch element and the pixel electrode. The interlayer insulating layer is provided with a contact hole for electrically connecting the pixel electrode and the switch element,
Forming an interlayer insulating film of an organic insulating material to be the interlayer insulating layer so as to cover the switch element formed on the substrate and the substrate;
Forming a contact hole in a region corresponding to the switch element of the interlayer insulating film to form the interlayer insulating layer;
Forming a covering member made of an inorganic material and the pixel electrode so as to cover the interlayer insulating layer;
Further including
The method for manufacturing a detection device according to claim 1, wherein the impurity semiconductor film is formed so as to cover the covering member and the pixel electrode. A manufacturing method of a detection device including a conversion element having a pixel electrode, an impurity semiconductor portion, and a semiconductor portion in order from the substrate side on a substrate,
By forming a second impurity semiconductor film having the same polarity as the first impurity semiconductor film on the first impurity semiconductor film formed in contact with the transparent conductive oxide to be the pixel electrode, the transparent conductivity Forming an impurity semiconductor film that covers the oxide and becomes the impurity semiconductor portion;
A method for manufacturing a detection device, wherein an impurity concentration of the first impurity semiconductor film is lower than an impurity concentration of the second impurity semiconductor film. A manufacturing method of a detection device including a conversion element having a pixel electrode, an impurity semiconductor portion, and a semiconductor portion in order from the substrate side on a substrate,
A second impurity semiconductor is formed after forming a first impurity semiconductor film including a portion in contact with the transparent conductive oxide serving as the pixel electrode by a CVD method using a main source gas, a sub source gas, and a dilution gas. Forming an impurity semiconductor film to be the impurity semiconductor portion by forming a film,
A method for manufacturing a detection device, wherein a film formation temperature when forming the first impurity semiconductor film is lower than a film formation temperature when forming the second impurity semiconductor film. A manufacturing method of a detection device including a conversion element having a pixel electrode, an impurity semiconductor portion, and a semiconductor portion in order from the substrate side on a substrate,
A second impurity semiconductor is formed after forming a first impurity semiconductor film including a portion in contact with the transparent conductive oxide serving as the pixel electrode by a CVD method using a main source gas, a sub source gas, and a dilution gas. Forming an impurity semiconductor film to be the impurity semiconductor portion by forming a film,
The electric power supplied between the anode electrode and the cathode electrode of the CVD apparatus when forming the first region is the electric power supplied between the anode electrode and the cathode electrode of the CVD device when forming the second region The manufacturing method of the detection apparatus characterized by the above-mentioned. A manufacturing method of a detection device including a conversion element having a pixel electrode, an impurity semiconductor portion, and a semiconductor portion in order from the substrate side on a substrate,
A second impurity semiconductor is formed after forming a first impurity semiconductor film including a portion in contact with the transparent conductive oxide serving as the pixel electrode by a CVD method using a main source gas, a sub source gas, and a dilution gas. Forming an impurity semiconductor film to be the impurity semiconductor portion by forming a film,
The detection apparatus characterized in that a partial pressure of the main source gas when forming the first impurity semiconductor film is higher than a partial pressure of the main source gas when forming the second impurity semiconductor film. Manufacturing method.   The detection apparatus manufactured by the manufacturing method of any one of Claim 1 to 17. A detection device according to claim 18,
Signal processing means for processing a signal from the detection device;
Recording means for recording a signal from the signal processing means;
Display means for displaying a signal from the signal processing means;
Transmission processing means for transmitting a signal from the signal processing means;
A detection system comprising:   The detection system according to claim 19, further comprising a radiation source that emits radiation toward the detection device.

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