JP2014222528A - Memory system and method of controlling nonvolatile memory - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a memory system capable of holding information about whether or not a region that is indicated as being unnecessary in units of sectors by a trimming request is unnecessary without requiring an additional storage region for a flag.SOLUTION: A memory system includes: a nonvolatile memory 6; storage means 4 provided with a logical-physical conversion table that holds a correspondence between a logical address specified by a host 1 and a physical address on the nonvolatile memory 6, for each management unit; and a controller 3. When receiving from the host 1 a deletion notification in which a deletion region in the unit of the amount of data which is smaller than the management unit is specified, the controller 3 reads data in a second region on the nonvolatile memory 6, which corresponds to a first region corresponding to the deletion region in the logical-physical conversion table; overwrites a predetermined data pattern at a location corresponding to the deletion region of the read data; and writes the data to a third region on the nonvolatile memory 6 which is different from the second region.

Description

  Embodiments described herein relate generally to a memory system and a non-volatile memory control method.

In a memory system as a secondary storage device, the host issues a data read / write instruction in units of sectors. However, data written from the host is usually a nonvolatile in the memory system in a predetermined management unit having a size larger than the sector. Stored in a conductive semiconductor memory. In order to manage where each sector is stored in the nonvolatile semiconductor memory, the memory system is a correspondence table in a management unit between a logical block address (LBA) as a logical address and a position on the nonvolatile semiconductor memory. A logical-physical conversion table is held.

JP 2010-218290 A

The problem to be solved by the present invention is that it is possible to hold information about whether or not it is unnecessary without needing an additional storage area for a flag for an area that is notified that it is not required in units of sectors by a trim request. Is to provide a simple memory system.

In order to achieve the above object, a memory system according to an embodiment includes a logical-physical conversion table that holds a correspondence between a nonvolatile memory, a logical address designated by a host, and a physical address on the nonvolatile memory for each management unit. And a controller. When the controller receives from the host a deletion notification in which a deletion area is designated by a logical address in units of data smaller than the management unit, the controller includes a first deletion area that is less than the management unit among the deletion areas. Read data in the first area corresponding to the management unit and the second area on the non-volatile memory corresponding in the logical-physical conversion table, and place a predetermined number in the location corresponding to the first deletion area of the read data A data pattern is overwritten, and the overwritten data is written to a third area corresponding to the management unit on the non-volatile memory separately from the second area.

FIG. 1 is a block diagram illustrating a system configuration of a memory system (SSD) according to the embodiment. FIG. 2 is a diagram illustrating a correspondence relationship between an LBA aligned with a management unit and a data area allocated to the management unit on the NAND flash memory in the embodiment. FIG. 3 is a diagram illustrating a logical-physical conversion table in the embodiment. FIG. 4 is a flowchart illustrating processing of the memory system when a trim request is received in the embodiment. FIG. 5 is a flowchart illustrating a process of writing a predetermined data pattern in an area corresponding to the LBA requested to be trimmed in the embodiment. FIG. 6 is a conceptual diagram illustrating a process of writing a predetermined data pattern in an area corresponding to the LBA requested to be trimmed in the embodiment. FIG. 7 is a conceptual diagram showing that the management unit can be released when all of the management units have a predetermined data pattern in the embodiment. FIG. 8 is a flowchart illustrating a process of releasing a releasable management unit when data of the management unit is moved in the embodiment.

When data has not been written for all sectors in a certain management unit, the position on the nonvolatile semiconductor memory corresponding to the logical address of the management unit is “unallocated”.
It has become. When data is written from the host to a sector included in an unallocated management unit, the management unit including the corresponding logical address becomes “allocated”, and the location on the nonvolatile semiconductor memory where the actual data exists is physically Saved as an address. A memory system may move data on a nonvolatile semiconductor memory for the purpose of eliminating fragmentation of data. Received notification of the data area that is no longer needed from the host, and "allocated"
By returning the management unit to “unassigned”, unnecessary data movement can be reduced.

In a conventional memory system, notification of an area that is no longer necessary from the host, for example, INCI
Received notification (hereinafter referred to as trim request) by Data Set Management Command (commonly referred to as trim request) adopted by TS ATA8-ACS, and aligned to the management unit in the area notified by the trim request. For the area (area having the same size as the management unit), the management unit can be changed from “allocated” to “unallocated” to prevent unnecessary data movement. On the other hand, the area that is not aligned with the management unit among the trim requests, that is, the area for which the trim request is less than the management unit is “unallocated”.
The trim request information cannot be used.

If a flag indicating whether or not an area is unnecessary for each sector is separately introduced, the area can be unassigned when an unnecessary area for the management unit is created in combination with information of subsequent trim requests. However, in this case, an additional storage area for storing the flag information is required, and a special process for writing the flag needs to be introduced.

Exemplary embodiments of a memory system and a memory system control method will be explained below in detail with reference to the accompanying drawings. In addition, this invention is not limited by this embodiment.

(Embodiment)
FIG. 1 is a block diagram illustrating an example of a configuration of an SSD (Solid State Drive) 2 as a memory system according to the embodiment. The SSD 2 that is a semiconductor storage device includes a RAM 4 including a management information storage unit 40, a data pattern detection unit 5 described below, a NAND flash memory 6 that actually stores data, and a controller 3 that controls them. SSD
2 receives a read / write instruction from the host 1 via an interface (not shown). The interface between the host 1 and the SSD 2 conforms to, for example, the SATA (Serial ATA) standard, but is not limited to this. The data pattern detection unit 5 may be implemented as hardware, or may be implemented as a firmware module executed by the controller 3.

The NAND flash memory 6 includes a memory cell array in which a plurality of nonvolatile memory cells are arranged in a matrix, and a peripheral circuit for controlling write, read, and erase operations for the memory cell array. The memory cell array is configured by arranging a plurality of blocks which are the minimum unit of data erasure. Each block is configured by arranging a plurality of pages which are the minimum units for data writing and reading. The storage capacity of one block is 1024KB, for example
For example, the storage capacity of one page is 8 KB. Each memory cell may be configured to store 1 bit, or may be configured to store 2 bits or more. In the NAND flash memory 6, rewriting to the same page in the block is permitted only after the entire block including the page is once erased.

Da of ATA standard, which is a standard for exchanging data between host and memory system
In ta Set Management Command, an attribute called Trim is defined. This
The host can notify the memory system of the area that has become unnecessary in units of sectors. For this, refer to the ATA command standard (http://www.t13.org/Documents/Up
loadedDocuments / docs2009 / d2015r1a-ATAATAPI_Command_Set _-_ 2_ACS-2.pdf), details of which are not described here. Such a command is hereinafter referred to as a trim command (trim request). According to this command, the storage area that is no longer needed is the first logical address (LBA).
And the sector size. In the present embodiment, not only the ATA standard trim request but also A
Even a standard other than TA can be applied as long as it has a similar specification.

Returning to FIG. Data written from the host 1 is NAN in a predetermined management unit
It is stored in the D flash memory 6. Using consecutive addresses in the logical address space as units of logical-physical conversion (conversion between logical addresses and physical addresses), the continuous addresses are collectively assigned to a physical area on the NAND flash memory 6. This management unit is larger than the sector unit specified by the trim request described above, and a plurality of sectors with consecutive logical addresses are arranged in order within the management unit. The size of the management unit is arbitrary,
For example, the page size or block size of the NAND flash memory 6 or the cluster size of the file system adopted by the host 1 can be matched.

If the update data written from host 1 is not aligned to the management unit, N
Data already stored in the area of the size of the management unit on the AND flash memory 6;
The newly written update data that is less than the size of the management unit is merged on the RAM 4,
After the management unit data is created, it is written in the empty area of the NAND flash memory 6 (read-modify-write). Where the data written from the host 1 is written on the NAND flash memory 6 changes dynamically, and the corresponding relationship is managed by a logical-physical conversion table described later. As the logical address, for example, an LBA (Logical Block Address) in which a serial number from 0 to the sector is assigned to the logical capacity is employed. The sector size is, for example, 512B.

FIG. 2 is a diagram showing a correspondence relationship between LBAs aligned in management units and data areas allocated to management units in the NAND flash memory. As shown in FIG. 2, the LBA specified by the host 1 in the write request is in units of sectors.
Are aligned in the size of the management unit (for example, page size), and sectors corresponding to consecutive LBAs in the management unit are collectively stored in the management unit area of the NAND flash 6. For example, when the size of the management unit is equal to the page size, a plurality of sectors corresponding to the LBAs aligned with the page size are written in an area corresponding to the page size of the NAND flash memory 6.

FIG. 3 is a diagram illustrating a logical-physical conversion table in the embodiment. The management information storage unit 40
A logical-physical conversion table is stored that indicates a correspondence relationship where the data specified by the LBA is written in the NAND flash memory 6. The logical-physical conversion table of FIG. 3 includes a value obtained by aligning the LBA specified by the host 1 as a logical address in a management unit, and a value obtained by aligning the physical address of the NAND flash memory 6 in a management unit as a physical address. . For example, if the management unit is equal to the page size, a physical page number is registered as a physical address. For example, if the management unit is equal to the block size, a physical block number is registered as a physical address.

When no data has been written from the host 1 for a certain LBA aligned in the management unit, an invalid value is written at the position of the physical address corresponding to the LBA in the logical-physical conversion table. "Assigned" status. When data is written to a sector in the management unit, the management unit becomes “allocated”, and the position on the NAND flash memory 6 is recorded in the logical-physical conversion table. The SSD 2 may move management unit data that has been “assigned” for the purpose of eliminating data fragmentation. By receiving a notification of an unnecessary area from the host 1 and setting a management unit that is no longer used to “unassigned”, it is possible to reduce unnecessary data movement.

FIG. 4 is a flowchart showing processing of the memory system when a trim request is received. The controller 3 receives a trim request from the host 1 (step S11). As described above, the trim request includes the head LBA and the sector size of the trim target area. 1
A plurality of trim target areas may be set by one trim request.

The controller 3 determines whether or not the LBA range designated as the trim target area includes the entire area of at least one management unit. When a plurality of management unit areas are included, the processing in step 13 is applied to all of them. (Step S12). When the management unit area is included (step S12: Yes), the controller 3 operates the logical-physical conversion table,
The LBA of the management unit is changed to “unallocated”, and the area on the NAND flash memory 6 allocated to the LBA of the management unit is released (step S13).

The controller 3 determines whether or not the LBA range designated as the trim target area includes an area less than the management unit (step S14). If there is a trim target area less than the management unit (step S14: Yes), the controller 3 writes “predetermined data pattern” to the trim target area less than the management unit (step S15). In the present embodiment, the fact that “predetermined data pattern” is written is used as a flag indicating that the area is unnecessary.

Here, the details of the process of step S15 will be described. The processing described here is not limited to the case where “predetermined data pattern” is written in the trim request.
Even when normal data is written from the host 1, data is written to the NAND flash memory 6 by the same processing.

When the SSD 2 writes data to the NAND flash memory 6, there are the following restrictions. The controller 3 can manage data only in a predetermined management unit larger than the resolution of the logical-physical conversion table, that is, the sector unit. That is, data cannot be written at different positions in units of sectors. Further, the NAND flash memory 6 cannot overwrite data. Details of the processing procedure (read modify write) of step S15 for writing data less than the management unit (not aligned with the management unit) under these restrictions are shown in the flowcharts of FIGS. 1 and 5 and FIG. This will be described with reference to the conceptual diagram shown.

FIG. 5 is a flowchart showing a process of writing a predetermined data pattern in an area corresponding to the LBA requested to be trimmed. FIG. 6 is a conceptual diagram showing a process of writing a predetermined data pattern in an area corresponding to the LBA requested to be trimmed. When there is a trim request from the host 1 to the area 50 smaller than the management unit, the controller 3 reads the data of the entire management unit 61 including the sector requested to be trimmed from the NAND flash memory 6, and R
It holds in AM4 (FIG. 5, step S21). The management unit 61 indicates an area on the NAND flash memory 6 associated with a value obtained by aligning the LBA requested for trimming in the management unit in the logical-physical conversion table, and stores data previously written from the host 1. doing.

The controller 3 overwrites the “predetermined data pattern” 77 in the RAM 4 in the area requested to trim the data read from the management unit 61.
The data other than the trimming target area written in the “merging data” and the “predetermined data pattern” 77 are merged (step S22). The merge operation here is also the same when overwriting update data written from the host 1 with data written in the management unit 61 in general. Here, in response to a trim request that is less than the size of the management unit 61, the “predetermined data pattern” 77 is overwritten on the sector in the range in which the trim request has been written in the data written to the management unit 61. To do.

The controller 3 transfers the new data merged in the RAM 4 in this way to the NAN.
The data is written into an empty area (new erased management unit 68) in the D flash memory 6 (step S23). The controller 3 records the physical address corresponding to the management unit 68 for the LBA aligned in the management unit including the trim target area by operating the logical-physical conversion table of FIG. The management unit 61 in which old data previously written from the host 1 is stored is released from the association with the LBA and invalidated, and is treated as a free area after data erasure (step S24).

FIG. 7 is a conceptual diagram showing that the management unit can be released when all the management units have a predetermined data pattern. As described above, the “predetermined data pattern” 77 corresponding to the trim target area is merged with the data of the management unit on the NAND flash memory 6 and written to the NAND flash memory 6 in the same manner as the normal writing from the host 1. Written.
As a result of the merge, the controller 3 changes the logical address of the management unit to “unassigned” when all sectors in the management unit become “predetermined data pattern” as shown in FIG. Can be released.

FIG. 8 is a flowchart showing processing for releasing a releasable management unit area when moving management unit data. When the controller 3 moves data on the NAND flash memory 6 or the like, when data for the management unit is read from the data to be moved (step S31), the data pattern detection unit 5 applies to all sectors in the management unit. It is determined whether or not “predetermined data pattern” has been written (step S32).

For example, if the old data that has been invalidated increases and the area where new data can be written decreases, the data in the management unit stored in the “allocated” area is transferred to a specific block. This is done when collecting and erasing blocks that contain only old data to increase free space (called compaction or garbage collection). Alternatively, when the data deteriorates after a long time after writing to the memory cell,
This is performed in order to improve reliability by rewriting data in another free area (referred to as refresh).

When the data pattern detection unit 5 detects that all the sectors in the management unit are “predetermined data pattern” (step S32: Yes), the data pattern detection unit 5 notifies the controller 3 accordingly. The controller 3 receives the notification from the data pattern detection unit 5 and sets the management unit to “
The area is changed to “unallocated” and the area on the NAND flash memory 6 allocated to the LBA of the management unit is released (step S33).

If all the sectors in the management unit are not “predetermined data pattern” (step S32: No), the data pattern detection unit 5 notifies the controller 3 accordingly. The controller 3 receives the notification from the data pattern detection unit 5 and writes the read data as it is to the movement destination on the NAND flash memory 6 (step S34).

After steps S33 and S34, the controller 3 determines whether all the movement target data has been read (step S35). If not all have been read (step S35:
No) returns to step S31. When all the data to be moved is read (step S3
5: Yes), the data movement process is terminated.

In addition, when the memory system of the present embodiment performs the above-described operation, it is preferable to further execute the following operation in order to function smoothly as a memory system. That is,
Data mismatch does not occur even when a “predetermined data pattern” is written in the NAND flash memory 6 instead of as a trim request from the host 1.

Specifically, an invalid value is written at the physical address position in the logical-physical conversion table of FIG.
When there is a read request from the host 1 for an “unallocated” LBA, a “predetermined data pattern” is returned to the host 1. As a result, the semiconductor memory device SSD2
Therefore, it is not necessary to distinguish between the case where the “predetermined data pattern” is written by the trim request and the case where the host 1 actually receives the “predetermined data pattern” write request.

Therefore, when a “predetermined data pattern” of a size aligned from the host 1 to the management unit is written instead of the trim request, a contradiction occurs even if the management unit is released in step S33 according to the flow of FIG. Absent. If there is a read request to the LBA corresponding to the released area, the actual data is invalidated and does not exist, but it is possible to guarantee the write data by returning “predetermined data pattern”. is there.

As described above, when the memory system according to the present embodiment receives a trim request from the host, the memory system immediately releases the area aligned with the data management unit of the memory system among the areas that are unnecessary due to the trim request. . When an unnecessary area is not aligned with a data management unit, information indicating that the area is unnecessary is held by writing a “predetermined data pattern” in the unnecessary area. After that, in combination with the subsequent trim request, when a releasable area having all management units of “predetermined data pattern” is created, the area is released. That is, when a “predetermined data pattern” aligned with the data management unit is detected when the data is subsequently read, the area is released. As a result, the trim request information can be fully utilized.

Further, according to the present embodiment, it is possible to increase the area that can be used by the memory system by releasing the management unit in which the “predetermined data pattern” is written as unnecessary.
Even if the host accidentally writes a “predetermined data pattern” or the controller writes due to receiving a trim request, there is no particular need to distinguish. Since the “predetermined data pattern” is used as a trim target area flag, an additional storage area for storing a flag indicating whether each sector is unnecessary is not required.

Also, among trim requests, information on the area that is not aligned with the management unit that was previously discarded or added to the storage area is stored without the need for an additional storage area. It becomes possible to utilize information of. It is possible to release a management unit by combining a plurality of trim requests not aligned with the management unit, and to increase the area of the nonvolatile semiconductor memory that can be used.

In the above embodiment, the management unit larger than the sector is described as one type. However, for example, a cluster (for example, two or more natural number times of the sector) and a track (for example, two or more natural number times of the cluster). In the case where there are a plurality of types of management units larger than a sector, for example, when the defragmentation is performed from a small management unit to a large management unit, the invalidation process described above may be executed at that time. Specifically, when all of the lower management units constituting a certain upper management unit become “predetermined data pattern”, the upper management unit may be released.

In the above embodiment, the trim command has been described as an example of the command for writing the “predetermined data pattern”. However, the present invention is not limited to this. For example, when information indicating the position of the defective sector is sent from the host, a “predetermined data pattern” may be written in the LBA corresponding to the defective sector.

Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

1 host, 2 SSD, 3 controller, 4 RAM, 5 data pattern detection unit, 6 NAND flash memory, 40 management information storage unit.

Claims (12)

Non-volatile memory;
A storage unit including a logical-physical conversion table that holds a correspondence between a logical address designated by a host and a physical address on the nonvolatile memory for each management unit;
The management unit including a first deletion area that is less than the management unit among the deletion areas when a deletion notification in which a deletion area is specified by a logical address is received from the host with a data amount smaller than the management unit as a unit The data in the second area on the nonvolatile memory corresponding to the first area corresponding to the logical-physical conversion table in the logical-physical conversion table is read, and a predetermined data pattern is applied to the location corresponding to the first deletion area of the read data A memory system comprising: a controller for overwriting and writing the overwritten data in a third area corresponding to the management unit on the non-volatile memory separately from the second area. When the controller receives the deletion notification, the controller deletes a second deletion area corresponding to the management unit in the deletion area and a physical address corresponding to the logical-physical conversion table in the logical-physical conversion table. The memory system according to claim 1, wherein an invalid value is written in the area. When the data read from the fourth area corresponding to the management unit on the nonvolatile memory is the predetermined data pattern, the controller stores the physical address corresponding to the fourth area. The memory system according to claim 1, wherein an invalid value is written in an area in the conversion table. When the controller receives a read request designating a logical address in which an invalid value is written in an area in which the corresponding physical address is stored in the logical-physical conversion table, the predetermined data pattern is used as read data. The memory system according to any one of claims 1 to 3, wherein the memory system is transmitted to the host. The memory system according to any one of claims 1 to 4, wherein the management unit is a page unit. The memory system according to any one of claims 1 to 5, wherein a deletion area is designated in the deletion notification by a logical address in a sector unit. A non-volatile memory control method comprising:
Manage the logical-physical conversion table that holds the correspondence between the logical address specified by the host and the physical address on the nonvolatile memory for each management unit,
When a deletion notification in which a deletion area is designated by a logical address with a data amount smaller than the management unit as a unit is received from the host,
Read the data of the first area corresponding to the management unit and the second area on the nonvolatile memory corresponding to the logical-physical conversion table including the first deletion area that is less than the management unit among the deletion areas,
A predetermined data pattern is overwritten at a location corresponding to the first deletion area of the read data, and the overwritten data is different from the second area and corresponds to the management unit on the nonvolatile memory. Control method for writing to the third area. When the deletion notification is received, the second deletion area corresponding to the management unit in the deletion area and the area in the logical-physical conversion table in which the physical address corresponding to the logical-physical conversion table is stored are invalid. The method for controlling a nonvolatile memory according to claim 7, wherein a value is written. When the data read from the fourth area corresponding to the management unit on the nonvolatile memory is the predetermined data pattern, the physical address corresponding to the fourth area is stored in the logical-physical conversion table. The non-volatile memory control method according to claim 7, wherein an invalid value is written in the area. When a read request specifying a logical address in which an invalid value is written in an area where the corresponding physical address is stored in the logical-physical conversion table is received from the host, the predetermined data pattern is transmitted to the host as read data The method for controlling a nonvolatile memory according to any one of claims 7 to 9. The method for controlling a nonvolatile memory according to claim 7, wherein the management unit is a page unit. The non-volatile memory control method according to claim 7, wherein the deletion notification has a deletion area specified by a logical address in units of sectors.

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