JP2014204030A - Substrate processing apparatus and method of manufacturing semiconductor device and program to be executed by computer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus including an attachment structure (temperature measurement unit) of a temperature sensor in which burning of an O-ring is avoided, and generation and accumulation of particles are prevented, while reducing the amount of electromagnetic waves propagating through the temperature measurement unit, in a manufacturing apparatus of semiconductor device where a wafer is heated using electromagnetic waves, and to provide a manufacturing apparatus of semiconductor device and a program to be executed by a computer.SOLUTION: A substrate processing apparatus comprises: a processing container for housing a substrate; an electromagnetic wave irradiation unit for irradiating the substrate with electromagnetic waves; a temperature measurement unit attachment section provided on the wall of the processing container having an opening, the diameter of which is a quarter or less of the wavelength of the electromagnetic waves; and a temperature sensor provided in the temperature measurement unit attachment section and measuring the radiation temperature of the substrate.

Description

  The present invention relates to a semiconductor device manufacturing apparatus, a semiconductor device manufacturing method, and a program executed by a computer for heating a semiconductor wafer (also referred to as a semiconductor substrate in this specification) using electromagnetic waves such as microwaves. The present invention relates to a temperature sensor mounting structure that is not affected by electromagnetic waves.

  When a semiconductor device is manufactured, a semiconductor wafer (hereinafter simply referred to as a wafer or a substrate) heated to a desired temperature is exposed to gas, thereby oxidizing, diffusing, annealing, CVD (Chemical Vapor Deposition), etc. on the wafer. Is processed. In these processes, there are a single wafer type apparatus for processing wafers one by one and a batch type apparatus for processing many wafers one by one, and the wafers are heated in the processing chamber environment installed in these apparatuses. The As the heating method, for example, resistance heating, lamp heating, light heating, or electromagnetic wave heating such as microwaves is used.

In WLP (Wafer Level Package), wiring, sealing resin, and solder bumps necessary for a semiconductor package are formed on a wafer (substrate) on which an IC (Integrated Circuit) is formed, and separated into individual pieces. With this WLP, the package can be downsized to the same size as the chip size of the IC.
In normal LSI manufacturing, after the previous process is completed, the process proceeds to the subsequent process. In the post-process, first, the back grind that polishes and thins the wafer, the dicing that cuts the wafer into individual pieces (chips), the bonding that bonds and connects the chips to the package, the mold that seals the package, the finishing process, the test There are processes such as.

In manufacturing WLP such as SiP (System in Package), a new intermediate process is required between a pre-process and a post-process. In the intermediate process, after receiving the wafer in the previous process, the wiring of the chip is formed during the back grinding in the subsequent process, and a solder ball is mounted on the tip. Alternatively, in the intermediate process, wiring is performed in the wafer state, and solder balls are formed as connection terminals.
Thereafter, in order to make the wafer thinner, the back surface is polished and diced, so that attention must be paid to the thickness and warpage of the wafer.

Conventionally, resistance heaters have been used for heating and curing polyimide resins used for chip wiring. However, in recent years, methods using electromagnetic waves such as microwaves have been tried for the purpose of lowering the temperature and reducing the warpage of the wafer. Further, the application range is expanding to low temperature crystallization of ZrO ₂ (zirconium oxide) used as a gate insulating film.

  In an apparatus that performs heat treatment using electromagnetic waves such as microwaves, a radiation thermometer (a temperature sensor that measures the radiation temperature of a substrate) has been used instead of a thermocouple as a means for accurately measuring the temperature of a wafer ( (See Patent Document 1).

JP 2012-124456 A

As described above, when vacuum treatment (heat treatment) using electromagnetic waves is performed, the cavity needs to be a vacuum container that also serves to prevent leakage of electromagnetic waves. However, as a requirement unique to the semiconductor manufacturing apparatus, it is usually performed to attach an O-ring to the sealed portion of the cavity to avoid contact between metals, and the same applies to the temperature measurement unit.
If fluorine rubber such as non-conductive Viton (registered trademark) is used as the material of the O-ring, it is burned out by application of electromagnetic waves. There is a conductive O-ring in which a metal compound is mixed with fluororubber. By using a conductive O-ring, it is possible to prevent the O-ring from burning out while preventing leakage of electromagnetic waves. However, there is a problem that particles are generated due to metal compounds. If the amount of metal compound mixed in the conductive O-ring is reduced, the amount of particles generated can be reduced, but there is a problem that the conductivity is lowered, the electromagnetic wave leakage suppression effect is diminished, and burnout occurs. . There is a trade-off (a trade-off relationship) between O-ring burnout due to this decrease in conductivity and particle generation due to the amount of compound mixture. However, the cavity in the semiconductor device is required to have a structure that avoids burning of the O-ring and prevents generation and accumulation of particles.
Further, the temperature measurement unit is heated by the propagation of electromagnetic waves, and the temperature sensor may malfunction due to a temperature rise. Therefore, it is necessary to reduce the amount of electromagnetic waves propagating through the temperature measurement unit as much as possible.
In view of the above problems, the object of the present invention is to avoid the burning of the O-ring and prevent the generation and accumulation of particles in a semiconductor device manufacturing apparatus that heats a wafer using electromagnetic waves such as microwaves, It is another object of the present invention to provide a substrate processing apparatus, a semiconductor device manufacturing method, and a program to be executed by a computer, which are provided with a temperature sensor mounting structure (temperature measurement unit) with a small amount of electromagnetic waves propagating in the temperature measurement unit.

  In order to achieve the above object, according to one aspect of the present invention, a processing container that houses a substrate, an electromagnetic wave irradiation unit that irradiates the substrate with electromagnetic waves, and a wall of the processing container, the processing container A temperature measurement unit mounting part in which the diameter of the opening to the electromagnetic wave is ¼ or less of the wavelength of the electromagnetic wave, and a temperature sensor that is provided in the temperature measurement unit mounting part and measures the radiation temperature of the substrate A substrate processing apparatus is provided.

  According to another aspect of the present invention, the step of irradiating the substrate accommodated in the processing container with electromagnetic waves, the wall of the processing container is provided, and the diameter of the opening to the processing container is the wavelength of the electromagnetic waves And a step of measuring the radiation temperature of the substrate with a temperature sensor attached to the temperature measurement unit attachment portion that is less than or equal to one-fourth of the above.

  Further, according to another aspect of the present invention, a procedure for irradiating a substrate accommodated in a processing container with an electromagnetic wave, and a diameter of an opening provided on the processing container wall, the diameter of the opening to the processing container being the wavelength of the electromagnetic wave There is provided a program for causing a computer to execute a procedure for measuring the radiation temperature of the substrate with a temperature sensor that measures the radiation temperature attached to the temperature measurement unit attachment portion that is less than or equal to one fourth of the above.

  According to the present invention, it is possible to reduce the amount of electromagnetic waves such as microwaves that pass through the temperature measurement unit mounting portion and propagate outside the processing chamber. In addition, according to another effect of the present invention, it is required to suppress generation in the manufacturing process of the semiconductor device by preventing the temperature measurement unit mounting portion from being heated and protecting the sealing material such as the temperature sensor and the O-ring. Generation of particles can be prevented. Furthermore, according to the other effect of this invention, it becomes possible to make a vacuum state in a process chamber and the inside of a temperature sensor attachment part.

It is sectional drawing which shows the schematic structural example of the substrate processing apparatus which concerns on one Example of this invention. It is sectional drawing for demonstrating an example of the structure of the conventional temperature measurement unit. It is a figure which shows one Example of the calculation result calculated by the basic principle of this invention. It is a figure which shows one Example of a structure of the controller which concerns on the substrate processing apparatus of FIG. It is sectional drawing for demonstrating one Example of the structure of the temperature measurement unit in the substrate processing apparatus of this invention. It is a schematic diagram for demonstrating the basic principle of this invention. It is sectional drawing for demonstrating one Example of the structure of the temperature measurement unit in the substrate processing apparatus of this invention. It is a vertical sectional view showing the configuration of an ICP (Inductively Coupled Plasma) type plasma processing apparatus as a semiconductor manufacturing apparatus of the present invention. It is a vertical sectional view for explaining an ECR (Electron Cyclotron Resonance) plasma processing apparatus of one embodiment of the substrate processing apparatus of the present invention. It is sectional drawing for demonstrating one Example of the structure of the temperature measurement unit in the substrate processing apparatus of this invention. It is a vertical sectional view showing a configuration of an MMT type plasma processing apparatus as a semiconductor manufacturing apparatus of the present invention.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
In addition, the following description is for describing one embodiment of the present invention, and does not limit the scope of the present invention. Accordingly, those skilled in the art can employ embodiments in which these elements or all of the elements are replaced with equivalent ones, and these embodiments are also included in the scope of the present invention.
In the description of each drawing, the same reference numerals are assigned to components having a common function, and the description is not repeated as much as possible.

A substrate processing apparatus according to a first embodiment of the present invention will be briefly described with reference to FIG. FIG. 1 is a cross-sectional view showing a schematic configuration example of a substrate processing apparatus according to an embodiment of the present invention.
In FIG. 1, a substrate processing apparatus using an electromagnetic wave such as a microwave is taken as an example as a heating method in a processing chamber environment (processing container) of a semiconductor manufacturing apparatus.
The substrate processing apparatus 100 includes a processing chamber (cavity) 11, a transfer chamber (not shown), and a microwave supply unit 19 as an electromagnetic wave irradiation unit. The wafer (substrate) 1 is processed in the processing chamber 11. The microwave supply unit 19 includes a microwave generation unit 20 as an electromagnetic wave generation unit, a waveguide 21, and a waveguide port 22.

(Microwave generator)
The microwave generation unit 20 generates, for example, a fixed frequency microwave or a variable frequency microwave. As the microwave generation unit 20, for example, a microtron, a klystron, a gyrotron, or the like is used. The microwave generated by the microwave generation unit 20 is radiated into the processing chamber 11 through the waveguide 21 from the waveguide port 22 communicating with the processing chamber 11. Thereby, the efficiency of dielectric heating can be raised. The waveguide 21 is provided with a matching mechanism 26 that reduces the reflected power inside the waveguide 21.
A microwave supply unit 19 is configured by the microwave generation unit 20, the waveguide 21, the waveguide port 22, and the matching mechanism 26.

(Processing room)
The processing container 18 forming the processing chamber 11 is made of a metal material such as aluminum (Al) or stainless steel (SUS), and has a structure that electromagnetically shields the processing chamber 11 from the outside.
The microwave supplied into the processing chamber 11 is repeatedly reflected on the inner wall surface of the processing container 18. Therefore, since the microwave is reflected in various directions in the processing chamber 11, the processing chamber 11 is filled with the microwave. Further, the microwave hitting the wafer 1 in the processing chamber 11 is absorbed by the wafer 1, and the wafer 1 is dielectrically heated by the microwave.
A microwave supply unit 19 is configured by the microwave generation unit 20, the waveguide 21, the waveguide port 22, and the matching mechanism 26.

A gas supply pipe 52 for supplying a gas such as nitrogen (N 2) is provided on the side wall of the processing container 18. The gas supply pipe 52 is provided with a gas supply source 55, a flow rate control device 54 that adjusts the gas flow rate, and an opening / closing valve 53 that opens and closes the gas flow path in order from the upstream side. The gas is supplied or stopped from the gas supply pipe 52 into the processing chamber 11. The gas supplied from the gas supply pipe 52 is used to cool the wafer 1 or push out the gas or atmosphere in the processing chamber 11 as a purge gas.
The gas supply unit 50 includes the gas supply pipe 52, the flow rate control device 54, and the opening / closing valve 53. The flow control device 54 and the opening / closing valve 53 are electrically connected to the control unit 80 and controlled by the control unit 80. A gas supply source 55 may be provided in the gas supply unit 50.

A gas discharge pipe 62 for exhausting the gas in the processing chamber 11 is provided on the side wall of the processing container 18. The gas discharge pipe 62 of the gas discharge unit 60 is provided with a vacuum pump 64 as an exhaust device and a pressure adjustment valve 63 in order from the upstream, and by adjusting the opening degree of the pressure adjustment valve 63, processing is performed. The pressure in the chamber 11 is adjusted to a predetermined value.
The gas exhaust pipe 62 and the pressure adjustment valve 63 constitute a gas exhaust unit 60. The pressure adjustment valve 63 and the vacuum pump 64 are electrically connected to the controller 80, and pressure adjustment control is performed by the controller 80. Note that a vacuum pump 64 may be provided in the gas discharge unit 60.

A wafer transfer port 71 for transferring the wafer 1 into and out of the processing chamber 11 is provided on the side wall of the processing container 18. The wafer transfer port 71 is provided with a gate valve 72 as an opening / closing part via a sealing part 74 such as an O-ring as a sealing part. A gate valve driving unit 73 is connected to the gate valve 72. The gate valve drive unit 73 is electrically connected to the controller 80, and the gate valve 72 is opened and closed by the controller 80. By opening and closing the gate valve 72, the inside of the processing chamber 11 and the inside of the transfer chamber (not shown) are configured to communicate with each other.
The wafer transfer port 71, the gate valve 72, and the gate valve drive unit 73 constitute a wafer transfer unit.
A transfer robot (not shown) for transferring the wafer 1 is provided in the transfer chamber. The transfer robot is provided with a transfer arm that supports the wafer 1 when the wafer 1 is transferred. By opening the gate valve 72, the wafer 1 is transferred between the processing chamber 11 and the transfer chamber by the transfer robot. The inside of the processing chamber 11 is sealed by closing the gate valve 72.

(Substrate support part)
In the processing chamber 11, a susceptor 25 is provided as a substrate support unit on which the wafer 1 is placed. The susceptor 25 includes lift pins (wafer push-up pins) 13 as a substrate support mechanism that supports the wafer 1 at its upper end 13a.
The lift pins 13 are formed of a material with low heat conductivity and good electrical insulation, such as quartz, ceramics, sapphire, or fluororesin. By using such a material, it is possible to suppress the lift pins 13 themselves from being heated, and further to suppress the heat escape from the wafer 1 to the substrate support pins 13. Since heat escape can be suppressed, the inside of the substrate can be heated uniformly. Further, by preventing the lift pins 13 from being heated, thermal deformation of the lift pins 13 can be prevented, and as a result, the wafer height due to the thermal deformation can be made constant. Accordingly, it becomes possible to heat the wafer around one slot with good reproducibility. The lift pins 13 are composed of a plurality (three in this embodiment).

In FIG. 1, the waveguide port 22 is provided on the upper wall of the processing container 18, that is, above the processing surface of the wafer 1. During substrate processing, the wafer 1 is supported upward by the lift pins 13 of the susceptor 25, and the distance between the waveguide port 22 and the surface of the wafer 1 is shorter than one wavelength of the supplied microwave. Further, the frequency of the microwave used is 5.8 [GHz], and the distance is shorter than the wavelength λ (= 51.7 [mm]) of the microwave.
It is considered that the direct wave emitted from the waveguide 22 is dominant in the range of the distance shorter than one wavelength from the waveguide 22. If it does as mentioned above, the direct wave directly emitted from the waveguide 22 becomes dominant in the microwave irradiated to the wafer 1, and the influence of the standing wave in the processing container 18 can be made relatively small. The wafer 1 in the vicinity of the waveguide port 22 can be rapidly heated.
In general, the temperature of the wafer 1 is low when the microwave power is low, and the temperature is high when the power is high. The substrate temperature varies depending on the size and shape of the processing container 18, the position of the microwave waveguide 22, and the position of the wafer 1. However, when the microwave power is increased, the correlation that the substrate temperature increases is lost. There is no.

The susceptor 25 is made of a metal material that is a conductor such as aluminum (Al).
Since the susceptor 25 is made of metal, the microwave potential is zero on the surface of the susceptor 25. If the wafer 1 is directly placed on the susceptor 25, the electric field intensity of the microwave is weak and is not heated. Therefore, in FIG. 1, the wafer 1 is placed at a position of about a quarter wavelength (λ / 4) of the microwave from the surface of the susceptor 25 or at an odd multiple of about λ / 4. The surface of the susceptor 25 here refers to a surface (upper surface) facing the back surface (lower surface) of the wafer 1 among the surfaces constituting the susceptor 25.
Since the electric field is strong at an odd multiple of λ / 4, the wafer 1 can be efficiently heated by microwaves. In this embodiment, for example, a microwave fixed at 5.8 [GHz] is used, and the wavelength of the microwave is 51.7 [mm]. Therefore, the height from the surface of the susceptor 25 to the wafer 1 is set to 12. .9 [mm].
A form in which the microwave frequency changes (varies) with time is also possible.
Alternatively, a plurality of fixed-frequency power sources may be provided, and microwaves having different frequencies may be switched and supplied from each.

A form in which the frequency of the microwave changes (varies) with time is also possible. In this case, the height from the surface of the susceptor 25 to the wafer 1 may be obtained from the wavelength of the representative frequency in the changing frequency band. For example, when changing from 5.8 [GHz] to 7.0 [GHz], the representative frequency is set to the center frequency of the changing frequency band, and the substrate is placed from the wavelength 46 [mm] of the representative frequency 6.4 [GHz]. The height from the surface of the portion 25 to the wafer 1 may be 11.5 [mm].
Alternatively, a plurality of fixed-frequency power sources may be provided, and microwaves having different frequencies may be switched and supplied from each.

On the side surface of the susceptor 25, a choke portion (not shown) as a groove portion is formed over the entire side surface. Then, the microwave is supplied in a state where the choke portion is disposed between the upper surface 25a of the substrate platform 25 and the seal portion 74 (wafer carry-in port 71). As a result, microwave leakage below the susceptor 25 can be prevented, and there is no need to use a conductive seal. Further, the microwave can be confined in the space above the susceptor 25, and the processing efficiency is improved. Further, it is possible to prevent the seal portion from being burned out.
For example, the depth of the choke portion is set to be equal to or less than a quarter wavelength (λ / 4) of the microwave. Thereby, the microwave cancellation at the end of the choke portion is maximized, and the microwave leakage prevention effect can be enhanced.
The choke portion may be filled with a dielectric. Thereby, it is possible to prevent particles from entering and accumulating into the choke portion while downsizing the apparatus. Examples of the dielectric filled in the choke portion include materials having a high dielectric constant such as SiO 2 (silicon dioxide), Al 2 O 3 (aluminum oxide), SiN (silicon nitride), and AlN (aluminum nitride).

The lower surface of the susceptor 25 is supported by the rotary shaft 23 and is connected to the lifting / lowering rotation mechanism 24. The up-and-down rotation mechanism 24 is electrically connected to the controller 80, and the susceptor 25 is rotated in the horizontal direction around the rotation shaft 23 by the controller 80 and is moved up and down in the vertical direction. By rotating the susceptor 25, the wafer 1 can be rotated in the horizontal direction, and the microwave can be uniformly applied to the surface side of the wafer 1.
Further, the microwave is usually irradiated at a position where the susceptor 25 is raised in the vertical direction from the substrate loading position where the wafer 1 is loaded from the transfer chamber to the processing chamber 11.
The susceptor 25, the lift pins 13, the rotating shaft 23, and the lifting / lowering mechanism 24 constitute a substrate support portion 27.

  The vicinity of the waveguide 22 is heated rapidly by the microwave because the electric field is strong. However, when the distance from the vicinity of the waveguide 22 is increased, the electric field becomes weak and is not easily heated. Therefore, the position of the waveguide opening 22 is decentered by 90 [mm] from the center position of the waveguide opening 22 to the center position of the wafer 1. As a result, the portion where the electric field is strong deviates from the center of the wafer 1. Therefore, the wafer 1 is rotated, and the portions of the surface of the wafer 1 are uniformly passed through the vicinity of the waveguide port 22 so that the film on the entire surface of the wafer 1 is uniformly heated.

(Temperature measurement mechanism)
Next, a temperature measurement mechanism in the processing chamber (cavity) 11 in the substrate processing apparatus 100 will be described.
Usually, in vacuum processing using electromagnetic waves such as microwaves, it is necessary to measure the temperature of a processed material in a cavity (cavity resonator) 11 that is a processing container by a temperature measuring device such as a temperature sensor. In FIG. 1, the temperature of the processing object (wafer 1) placed in the cavity is measured by the temperature measurement unit 331, and the measurement result is output to the controller 80.
FIG. 2 is a cross-sectional view for explaining an example of the structure of a conventional temperature measurement unit. In this example, an example in which a conventional temperature measurement unit 31 is attached instead of the temperature measurement unit 331 of the substrate processing apparatus 100 of FIG. 1 will be described.
In FIG. 2, a through hole having a diameter D1 is formed in the upper wall (thickness: L1) of the processing container 18 in the vicinity of the wafer 1, and the temperature sensor mounting portion 33 is fitted to the through hole. A lower part is provided. A temperature sensor 32 is attached to the upper part of the temperature sensor attachment portion 33.
Below the temperature sensor mounting portion 33, there is an adapter 36 fixed to the temperature sensor mounting portion 33 with a screw 37, and the adapter 36 and the temperature sensor mounting portion 33 are coupled by a vacuum seal 35. In addition, the upper portion of the adapter 36 and the lower portion of the temperature sensor mounting portion 33 include a dielectric 39, and the vacuum container 34 is hermetically sealed by the vacuum seal 34 as an upper connecting portion. A plurality of adapters 36 having different hole diameters (measurement window diameters) D0 corresponding to the frequency of the electromagnetic wave to be used are prepared and exchanged according to the frequency of the electromagnetic wave used for processing. The hole diameter (measuring instrument diameter) D0 ′ below the sensor 32 is determined by the sensor 32 to be attached. The distance L2 indicates the distance from the inlet (inside the cavity) of the through hole provided in the upper wall of the processing container 18 to the front surface of the temperature sensor 32.
The upper wall (outside) of the processing vessel 18 and the temperature sensor mounting portion 33 are connected by a vacuum seal 34, and the presser fitting 38 is screwed with a screw (not shown) from above to further strengthen the presser and secure the sealing performance. To do.
The temperature measurement unit shown in FIG. 1 when FIG. 2 is applied includes a temperature sensor 32, a temperature sensor mounting portion 33, vacuum seals 34 and 35, an adapter 36, a screw 37, and a presser fitting 38.
For example, Viton (registered trademark) O-rings are used as the vacuum seals 34 and 35, but conductive O-rings for preventing leakage of electromagnetic waves such as microwaves may be used.

The temperature measurement by the above-described temperature measurement unit 31 is of course used for controlling the electromagnetic wave treatment process, but is also very important for confirming the situation during the electromagnetic wave treatment process and detecting abnormalities in the electromagnetic wave ( (See Patent Document 1).
Further, when performing vacuum processing using electromagnetic waves, the cavity needs to be a vacuum container that also serves to prevent leakage of electromagnetic waves. However, as a requirement specific to semiconductor manufacturing equipment, a vacuum seal such as an O-ring is attached to the sealed portion of the cavity so that contact between metals is usually avoided, and a temperature measurement unit with a temperature sensor 32 attached. The same applies to 31.

(Structure of temperature measurement unit)
As described with reference to FIG. 1, the present invention is a semiconductor device including a microwave radiation mechanism (microwave supply unit 19) and a cavity (processing chamber) 11, and includes a wafer 1 disposed in the cavity 11. A temperature measurement unit for measuring the temperature of the gas and a temperature measurement unit mounting portion.
FIG. 3 is a cross-sectional view for explaining an embodiment of the structure of the temperature measurement unit and the temperature measurement unit mounting portion in the substrate processing apparatus of the present invention.
In FIG. 3, a through hole (opening) 341 having a diameter D is opened on the upper wall (thickness: L1) of the processing container 203 in the vicinity of the wafer 1 so as to be fitted into the through hole 341. A temperature sensor mounting lower portion 333 is provided. A temperature sensor mounting upper portion 332 is provided above the temperature sensor mounting lower portion 333. O-rings 334 and 335 are attached as vacuum seals to the vacuum vessel sealing portion between the temperature sensor attachment lower portion 333 and the temperature sensor attachment upper portion 332, and the processing vessel 203 and the temperature sensor attachment lower portion 333 are connected by screws 337. Fixed.
Furthermore, a dielectric 336 is attached above the temperature sensor attachment lower portion 333 and below the temperature sensor attachment upper portion 332 in contact with the cylindrical hollow portion having a diameter C1 of the temperature sensor attachment lower portion 333. The dielectric 336 is sealed by an O-ring 335 in order to maintain a hermetic seal between the hollow portion of the temperature sensor mounting lower portion 333 and the cylindrical hollow portion having the diameter D ′ of the temperature sensor mounting upper portion 332. Further, the temperature sensor mounting upper portion 332 and the temperature sensor mounting lower portion 333 are fixed with screws 338.

The temperature sensor mounting lower part 333 and the temperature sensor mounting upper part 332 are both made of a metal material such as aluminum (Al) or stainless steel (SUS).
As a requirement specific to a semiconductor manufacturing apparatus, an O-ring is usually attached to a vacuum container sealing portion so as to avoid contact between metals. For this reason, non-conductive Viton (registered trademark) or the like is adopted as the material of the O-rings 334 and 335. However, a conductive O-ring may be employed to prevent leakage of electromagnetic waves such as microwaves.
The temperature sensor mounting lower portion 333 and the temperature sensor mounting upper portion 332 that are sealed in a vacuum container by the O-rings 334 and 335 constitute a temperature sensor mounting adapter to which the temperature sensor 31 is mounted. The temperature sensor 32 is configured such that its lower part enters the inside of the upper part of the upper part of the temperature sensor attachment upper part 332, and the temperature sensor 32 is attached to the temperature sensor attachment adapter so that the temperature measurement is performed as shown in FIG. A unit 331 is configured.

As described above, the temperature sensor attachment lower portion 333 is fitted and attached to the through hole 341 provided in the upper wall of the processing container 203. An O-ring 339 is attached as a vacuum seal to the vacuum vessel sealing portion between the temperature sensor mounting lower portion 333 and the upper wall of the processing vessel 203, and is joined by the vacuum seal 339, and the presser fitting is screwed with a screw 337 from above. This further strengthens the presser foot and ensures sealing performance. That is, the temperature sensor mounting lower portion 333 is fixed to the upper wall of the processing vessel 203 with screws 337, and an O-ring 339 is attached as a vacuum seal to the vacuum vessel sealing portion of the connection portion.
Note that the temperature sensor mounting lower portion 333 and the processing container 203 are both made of a metal material such as aluminum (Al) or stainless steel (SUS).
Therefore, non-conductive Viton (registered trademark) or the like is adopted as the material of the O-ring 339 for the reason described above. In order to prevent leakage of electromagnetic waves such as microwaves, a conductive O-ring may be employed.

Next, the through-hole 341 is formed in a cylindrical shape, and the central axis of the cylinder coincides with the central axes of the temperature sensor mounting lower part 333 and the temperature sensor mounting upper part 332. Moreover, those central axes are configured to pass through the center of the sensing surface of the temperature sensor 32.
Further, the diameter C1 of the cylindrical hollow portion at the center of the temperature sensor mounting lower portion 333 is larger than the measurement window diameter D (D <C1).

An inner diameter C2 (not shown) of the upper portion of the temperature sensor mounting lower portion 333 is a circular bowl shape having a larger diameter (C2> C1) than the above-described cylindrical hollow portion having a diameter C1, and the temperature sensor mounting upper portion is placed in the bowl. The lower portion of 332 has a nested structure. The lower portion of the temperature sensor mounting upper portion 332 includes a dielectric 336, and the lower O-ring 338 and the information O-ring 334 seal the vacuum container portion of the connection. The temperature sensor mounting lower portion 333 and the temperature sensor mounting upper portion 332 are fixed by the screw 338. That is, the temperature measurement window (through hole 341) has a vacuum seal structure.
The diameter D ′ of the cavity below the sensor surface of the temperature sensor 32 is preferably configured to be equal to or smaller than the diameter D0 ′ of FIG. 2 if the temperature sensor 32 is the same as that of FIG. More preferably, the diameter D ′ is configured to be the same diameter as the diameter D.

Now, the basic structure of the microwave attenuation structure will be described. FIG. 4 is a schematic diagram for explaining the basic principle of the present invention. As shown in FIG. 4, the microwave is attenuated by the measurement window (hole diameter) D and its plate thickness (depth) L.
αT = 8.686 (2πL / λ) √ {(λ / λc) ^ 2-1} Equation (1)
λ = 299.8 / f√ {1+ (D ′ / D) ^ 2 (εr−1)} (2)
λC = 1.706D Formula (3)
Given in. (ΑT: attenuation [dB], D: measurement window, D ′: diameter of measuring device, λ: free space wavelength in dielectric, λC: cutoff wavelength)
The attenuation αT can be increased by reducing the measurement window diameter D as much as possible and increasing the window diameter depth L (or L + α) (L> λ / 4). These are based on a general choke mechanism.

From the above relationship between the hole diameter and the plate thickness, an optimal dimensional relationship can be found as shown in FIG. FIG. 5 is a diagram showing an example of a calculation result calculated according to the basic principle of the present invention. In FIG. 5, the horizontal axis represents the hole thickness L [mm], and the vertical axis represents the attenuation 1 αT1 [dB], the attenuation 2 αT2 [dB], and the attenuation 12 αT12 [dB]. In FIG. 5, the microwave frequency is 5850-6650 [MHz], and the hole diameter D is 20 [mm] and 10 [mm].
In Example 1, for example, the hole diameter D is set to about 5 to 40 [mm]. Preferably, when the frequency is 2.45 [GHz], the wavelength is 122.4 [mm]. A length of 30.6 [mm] or less is preferable.
For example, when the frequency of the microwave is 5850 [MHz], the wavelength (λ) is 51.3 [mm]. Therefore, the length of λ / 4 is preferably 12.9 [mm] or less, for example, 10 [ mm].
When the hole diameter is λ / 4 [mm] or less, when the plate thickness (depth) L is 20 [mm], it can be attenuated by about 60 [dB].
Further, when the hole diameter D cannot be reduced to 10 [mm] or the like, the microwave can be attenuated by increasing the thickness L. For example, when the hole diameter D is 20 [mm] and the thickness L is about 50 [mm], the same effect as when the hole diameter D is 10 [mm] and the thickness L is 20 [mm] is obtained. It is done. Thus, in Example 1, thickness L is about 10 [mm] -60 [mm]. If the thickness L cannot be increased, the temperature sensor mounting position should be as far as possible. For example, the same effect can be obtained by making the adapter longer or thickening only the adapter mounting portion.
As a requirement unique to semiconductor manufacturing equipment, a structure that prevents accumulation of particles is required. On the other hand, the choke structure does not satisfy this requirement by itself and also depends on the wavelength, so there is a limit to miniaturization.
By the way, when the propagation speed of the electromagnetic wave in the dielectric is considered, when the relative permittivity of the dielectric is εr, the permittivity in vacuum is ε0, and the permeability μ0, the propagation speed is
1 / √ (Vε0μ0) (4)
It becomes. Therefore, in the dielectric, the propagation speed is reduced by 1√εr and the wavelength is shortened at the same ratio as compared to the vacuum.

Therefore, as shown in FIG. 3, in the first embodiment of the present invention, the hole (through hole 341) of the temperature measurement window is shaped to be a choke mechanism. And
(I) The diameter of the through hole 341 is set to a length equal to or shorter than λ / 4 of the wavelength λ of the electromagnetic wave output from the microwave generator 19. As a result, electromagnetic waves such as microwaves can be forcibly attenuated.
(Ii) The thickness L of the chamber lid (the upper wall of the processing container 203) is increased (for example, L + α). Preferably, the thickness L is a length equal to or longer than λ / 4 of the wavelength λ of the electromagnetic wave output from the microwave generator 19. As a result, the amount of attenuation of electromagnetic waves such as microwaves can be increased, preventing malfunction of the temperature measuring device, preventing heating of the O-ring, and preventing leakage of electromagnetic waves such as microwaves.

Next, the control unit 80 controls each device of the substrate processing apparatus such as a gas supply unit, a gas exhaust unit, and an excitation unit that constitutes the substrate processing apparatus.
For example, the flow control device 54 and the opening / closing valve 53 are electrically connected to the control unit 80 and controlled by the control unit 80. Further, for example, the pressure adjustment valve 63 and the vacuum pump 64 are electrically connected to the control unit 80, and pressure adjustment control is performed by the control unit 80. Further, for example, the gate valve driving unit 73 is electrically connected to the control unit 80, and the gate valve 72 is opened and closed by the control unit 80. Further, for example, the susceptor 25 is rotated in the horizontal direction around the rotation shaft 23 and is moved up and down in the vertical direction. Further, the raising / lowering rotating mechanism 24 is electrically connected to the control unit 80, and the substrate mounting unit 25 is rotated in the horizontal direction around the rotation shaft 23 by the control unit 80, and is moved up and down in the vertical direction.

  FIG. 6 shows a configuration example of the control unit 80 according to the substrate processing apparatus 100 of FIG. FIG. 6 is a diagram illustrating an example of the configuration of the control unit 80 according to the substrate processing apparatus 100 of FIG. As shown in FIG. 6, a controller (control unit) 80 that is a control unit is configured as a computer that includes a CPU (Central Processing Unit) 102 that is an arithmetic device, a storage device 104, and an I / O port 106. The storage device 104 and the I / O port 106 are configured to exchange data with the CPU 102 via the internal bus 108. For example, an input / output device 204 having a mouse, a keyboard, and a display, or an input / output device 204 configured as a touch panel or the like is connected to the controller 80. Further, the input / output device 204 may be configured to be integrated with the controller 80.

The storage device 104 is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 104, a control program that controls the operation of the substrate processing apparatus 100, a process recipe that describes the procedure and conditions of the substrate processing, and the like are stored in a readable manner. Note that the process recipe is a combination of functions so that a predetermined result can be obtained by causing the controller 80 to execute each procedure in the substrate processing step, and functions as a program. Hereinafter, the process recipe, the control program, and the like are collectively referred to as simply a program.
When the term “program” is used in this specification, it may include only a process recipe alone, may include only a control program alone, or may include both. In addition, a memory area (work area) for temporarily storing programs and data read by the CPU 121a may be separately configured in a RAM (Random Access Memory) or the like.
The program may be recorded on an internal recording medium provided in the storage device 104 from the beginning, and the program recorded on the external recording medium in the external storage device 206 is moved to the internal recording medium to perform internal recording. The medium program may be overwritten.
The I / O port 106 includes a temperature measurement unit 331, a gate valve 72, a susceptor up-and-down rotation mechanism 24, a heater of the susceptor 25, a gas supply unit 50, a valve 53, a flow rate control device 54, a pressure sensor, a vacuum pump 64, and a high-frequency power source. Are connected to each device of the substrate processing apparatus 100, etc., and control the operation of each device or receive the operation status of each unit.

  The CPU 102 is configured to read and execute a control program from the storage device 104 and to read a process recipe from the storage device 104 in response to an operation command input from the input / output device 204. And CPU102 is comprised so that each apparatus may be controlled so that the content (procedure, conditions, etc. of a substrate process) of the read process recipe may be followed.

  The controller 80 is not limited to being configured as a dedicated computer, and may be configured as a general-purpose computer. For example, an external storage device storing the above-described program (for example, magnetic tape, magnetic disk such as a flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card) The controller 80 according to the present embodiment can be configured by preparing the program 206 and installing the program in a general-purpose computer using the external storage device 206. The means for supplying the program to the computer is not limited to supplying the program via the external storage device 206. For example, the program may be supplied without using the external storage device 206 by using a communication means such as the network 110 or a dedicated line. Note that the storage device 104 and the external storage device 206 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. Note that in this specification, the term recording medium may include only the storage device 106 alone, only the external storage device 206 alone, or both.

Next, the substrate processing operation of this embodiment in the substrate processing apparatus 100 will be described. The operation of each part of the substrate processing apparatus 100 is controlled by the control device 80.
The processing operation of one embodiment of the substrate processing apparatus of the present invention is executed in the following steps S10 to S16 (procedure (1) to procedure (7)).

Procedure (1) Board loading step S10
In the substrate loading step S10, in the substrate loading step of loading the wafer 1 into the processing chamber 11, first, the gate valve 72 is opened to connect the processing chamber 11 and the transfer chamber. Next, the wafer 1 to be processed (substrate to be processed) is loaded from the transfer chamber into the processing chamber 11 through the wafer transfer port 71 by the transfer robot.

Procedure (2) Substrate Placement Step S11
In the substrate placement step S <b> 11, the wafer 1 loaded into the processing chamber 11 is placed on the upper end 13 a of the lift pins 13 by the transfer robot and supported by the lift pins 13. Next, when the transfer robot returns from the processing chamber 11 to the transfer chamber, the gate valve 72 is closed.

Procedure (3) Nitrogen gas supply step S12
Next, in the nitrogen gas supply step S12, the inside of the processing chamber 11 is replaced with a nitrogen (N2) atmosphere. Since the atmospheric atmosphere outside the processing chamber 11 is involved when the wafer 1 is loaded, the inside of the processing chamber 11 is replaced with an N2 atmosphere so that moisture and oxygen in the atmospheric atmosphere do not affect the process.

Procedure (4) Gas exhaust step S13
In the gas exhaust step S13, the open / close valve 53 is opened to supply the N 2 gas from the gas supply pipe 52 into the processing chamber 11, and the pressure in the processing chamber 11 is adjusted to a predetermined value by the pressure adjustment valve 63. The gas (atmosphere) in the processing chamber 11 is discharged from the gas discharge pipe 62 by the vacuum pump 64.

Procedure (5) Heat treatment (start of microwave supply) Step S14
Next, in the heat treatment step S14, the susceptor 25 is raised, and the choke portion moves to a position where it is disposed between the upper surface 25a of the susceptor 25 and the seal portion 74 (wafer carry-in port 71). Then, the wafer 1 is rotated, and the microwave generated by the microwave generation unit 20 is supplied from the waveguide port 22 into the processing chamber 11 to irradiate the surface of the wafer 1.

Microwaves generated by the microwave generation unit 20 are introduced into the processing container 18 from the waveguide port 22 and irradiated onto the surface of the wafer 11. In the present embodiment, the high-k film on the surface of the wafer 11 is heated to 100 [° C.] to 600 [° C.] by this microwave irradiation to modify the high-k film, that is, from the high-k film. An impurity such as C or H is removed, and a process for reforming into a dense and stable insulator thin film is performed.
A dielectric such as a high-k film has a different microwave absorption rate depending on the dielectric constant. The higher the dielectric constant, the easier it is to absorb microwaves. Our research has shown that when a wafer is irradiated with high-power microwaves, the dielectric film on the wafer is heated and modified. The feature of heating by microwave is dielectric heating by dielectric constant ε and dielectric loss tangent tan δ. When materials having different physical properties are heated at the same time, only a material that is easily heated, that is, a material having a higher dielectric constant is selectively used. It has been found that it can be heated to higher temperatures.
In this way, a substance having a high dielectric constant is heated rapidly, and other substances are used to take a relatively long time to be heated, and high-power microwaves are irradiated. As a result, the microwave irradiation time for performing desired heating on the dielectric can be shortened, so that other substances have a high dielectric constant by ending the microwave irradiation before being heated. The material can be selectively heated.

Hereinafter, annealing of the high-k film will be described. A high-k film has a higher dielectric constant ε than silicon, which is the substrate material of the wafer. For example, although the relative dielectric constant εr of silicon is 3.9, the relative dielectric constant εr of the HfO film that is a high-k film is 25, and the relative dielectric constant εr of the ZrO film is 35. Therefore, when the wafer on which the High-k film is formed is irradiated with microwaves, the High-k film is selectively heated to a higher temperature.
That is, experimentally, the effect of film reforming is greater when high-power microwaves are irradiated. When the high-power microwave is irradiated, the temperature of the High-k film can be rapidly increased.

On the other hand, when a relatively low power microwave is irradiated for a long time, the temperature of the whole substrate becomes high during the modification process. As time elapses, the temperature of the silicon rises due to heat conduction from the high-k film on the substrate surface irradiated with microwaves to the silicon on the back side of the substrate due to the dielectric heating of the silicon itself. Because it ends up. The reason why the film modification effect is large when irradiating high-power microwaves is that the dielectric can be heated to a high temperature by dielectric heating within the time until the temperature of the entire substrate rises and reaches the upper limit temperature. This is probably because of this.
Therefore, in this embodiment, a direct wave with strong energy is irradiated to the substrate surface side on which the High-k film is formed so as to increase the heating difference between the dielectric and the substrate.

Moreover, the temperature rise of the wafer 1 can be suppressed by cooling the wafer 1 during the microwave irradiation. In order to cool the wafer 1, for example, the temperature of the wafer 1 can be controlled by increasing the flow rate of an inert gas (for example, N 2 gas) introduced into the processing container 18 and controlling the flow rate.
Further, when the cooling effect of N 2 gas is positively used, the cooling effect by the gas can be improved by providing a gas supply pipe in the susceptor 25 and flowing the gas between the wafer 1 and the susceptor 25. The temperature of the wafer 1 can be controlled by controlling the flow rate of this gas.
In this embodiment, N2 gas is used. However, if there is no problem in process and safety, another gas having a high heat transfer coefficient, for example, diluted He gas, is added to the N2 gas, thereby improving the substrate cooling effect. It can also be improved.
Further, a cooling flow path for circulating a coolant such as a cooling water flow meter, an on-off valve, and a cooling water path may be provided in the susceptor 25.

Procedure (6) Microwave supply stop step S15
In the microwave supply stop step S15, as described above, the microwave is supplied for a predetermined time to perform the substrate heating process, and then the supply of the microwave is stopped.

Procedure (7) Substrate Unloading Step S16
In the substrate carry-out step S16, when the heat treatment process is completed, the heat-treated wafer 1 is carried out from the process chamber 11 into the transfer chamber by a procedure reverse to the procedure shown in the substrate carry-in step S10 described above.

  According to the first embodiment, by preventing propagation of electromagnetic waves such as microwaves, the temperature sensor can be protected from electromagnetic waves, and erroneous detection of the temperature sensor due to the influence of electromagnetic waves can be prevented. Further, since the sealing material can be protected by preventing propagation, particles can be prevented from being generated.

Next, a second embodiment of the present invention will be described below. The second embodiment is an embodiment in which FIG. 3 of the first embodiment is replaced with FIG. That is, FIG. 7 is a cross-sectional view for explaining an embodiment of the structure of the temperature measurement unit in the substrate processing apparatus of the present invention, as in FIG.
FIG. 7 shows a chamfered portion 342 as a second opening provided on the inside (cavity side) of the processing vessel 203 in the through hole 341 in FIG. 3. The chamfered part 342 as the second opening functions as a discharge generation preventing part in the substrate processing apparatus 300. The diameter of the second opening is larger than the diameter of the first opening (through hole (opening) 341).

  According to the second embodiment, by providing the discharge generation preventing section as the second opening, in addition to the effects of the first embodiment, it is possible to prevent the occurrence of an arc due to the concentration of electromagnetic waves.

  In the present embodiment, an example in which corners are simply deleted is shown, but the present invention is not limited to this, and an R (curve) may be provided.

Next, a third embodiment of the present invention will be described below. The third embodiment is an embodiment in which FIG. 3 of the first embodiment is replaced with FIG. That is, FIG. 8 is a cross-sectional view for explaining an example of the structure of the temperature measurement unit in the substrate processing apparatus of the present invention, as in FIG.
FIG. 8 shows a case where the dielectric 251 is filled in the through hole 341 shown in FIG.

  The dielectric 251 is preferably made of a material that easily attenuates electromagnetic waves while transmitting radiant heat radiated from the substrate. For example, it is configured to include at least one of silicon oxide, aluminum oxide, and aluminum nitride.

According to the third embodiment, since the dielectric 251 is filled, in addition to the effects of the first embodiment, intrusion of particles can be prevented. Further, the groove can be reduced in size.
In addition, by applying the third embodiment to the second embodiment, it is possible to prevent the occurrence of arc due to the concentration of electromagnetic waves in addition to the above effects.

  Next, a fourth embodiment of the present invention will be described below with reference to FIG. The fourth embodiment is another embodiment of the semiconductor manufacturing apparatus of the present invention. FIG. 9 is a vertical sectional view showing a configuration of an ICP (Inductively Coupled Plasma) type plasma processing apparatus as a semiconductor manufacturing apparatus of the present invention. Accordingly, only the temperature measurement unit of the first to third embodiments can be applied except that FIG. 1 is replaced with FIG.

In the detailed description of the configuration according to the fourth embodiment, constituent elements having the same functions as those of the first embodiment are denoted by the same reference numerals and omitted. Also, the gas supply unit is not shown.
The configuration example of the controller according to the substrate processing apparatus is the same as that shown in FIG.
Further, since the temperature measurement unit is the same as the temperature measurement unit 331 of FIG. 1, it is not shown in FIG. In short, the temperature measurement unit 331 may satisfy the function of measuring the temperature of the processing object (wafer 1) placed in the cavity and outputting the measurement result to the controller 80. Therefore, the installation location of the temperature measurement unit is not limited to the upper wall of the processing container 18 and may be provided on the side wall.
The ICP plasma processing apparatus 300 according to the fourth embodiment generates plasma by supplying electric power via the matching units 272a and 272b, the high frequency power supplies 273a and 273b, and the dielectric coils 315a and 315b, respectively. The dielectric coil 315a is laid outside the processing container 203 on the ceiling side. The dielectric coil 315 b is laid outside the outer peripheral wall of the processing container 203.

Also in the fourth embodiment, a processing gas containing hydrogen atoms, nitrogen atoms and the like is supplied from the gas supply pipe 232 into the processing chamber 201 via the gas inlet 234 in the metal removal processing and the product substrate processing. . Further, when high-frequency power is supplied to the dielectric coils 315a and 315b, which are excitation portions, before and after the gas supply, an electric field is generated by electromagnetic induction. Using this electric field as energy, the supplied processing gas can be excited as a plasma state to generate active species.
And the metal removal process of this invention is performed in the state which floated the dummy wafer from the susceptor upper surface.

(2-1) Substrate Main Processing Step First, the main substrate processing step as a product substrate processing step will be described. The substrate processing process for products includes the following (A) substrate loading process, (B) substrate heating process, (C) substrate transfer process, (D) processing gas supply process, (E) plasma processing process, ( F) It is composed of an exhaust process and (G) a substrate carry-out process.

First, after the inside of the processing chamber 201 is set to the same pressure (50 [Pa] to 300 [Pa]) as the pressure in the substrate transfer chamber, for example, 100 [Pa], the wafer 1 on which the oxide film is formed is transferred to the substrate. It is carried into the processing chamber 201 from the chamber. Specifically, the inside of the processing chamber 201 is evacuated using the vacuum pump 246, and an inert gas, for example, N ₂ gas, for the processing applied to the wafer 1 and the wafer 1 is supplied to adjust the pressure.
Next, the susceptor 217 is lowered to the transfer position of the wafer 1, and the wafer push-up pins (lift pins) 266 are passed through the through holes 217 a of the susceptor 217. As a result, the wafer push-up pins 266 protrude from the upper surface of the susceptor 217 by a predetermined height, for example, about 0.5 [mm] to 3.0 [mm].
Subsequently, the gate valve 244 is opened, and the wafer 1 is loaded into the process chamber 201 from a substrate transfer chamber (not shown) adjacent to the process chamber 201 using a transfer mechanism not shown in the drawing. As a result, the wafer 1 is supported in a horizontal posture on the wafer push-up pins 266 protruding from the upper surface of the susceptor 217. After the wafer 1 is loaded into the processing chamber 201, the transfer mechanism is moved out of the processing chamber 201, and the gate valve 244 is closed to seal the processing chamber 201.

Electric power is supplied to the heater 217c in advance, and the heater 271c and the susceptor 217 are heated to a predetermined temperature within a range of, for example, 25 [° C.] to 700 [° C.]. Here, if the loaded wafer 1 is immediately transferred onto the susceptor 217, the contact surface of the wafer 1 with the susceptor 217 is more easily heated, and there is a difference in the rate of temperature increase with the opposite surface of the wafer 1. End up. As a result, the wafer 1 may be warped due to a difference in thermal expansion between both surfaces of the wafer 1. The warp of the wafer 1 is likely to occur when, for example, the heater set temperature is 700 [° C.] or higher.
Therefore, in the present embodiment, warping of the wafer 1 is suppressed by performing the following substrate temperature raising step before the wafer 1 is transferred to the susceptor 217.

(B) Substrate temperature raising step In the substrate temperature raising step, the temperature of the wafer 1 carried into the processing chamber 201 is raised. Specifically, for example, the wafer 1 is supported by the wafer push-up pins 266 so as to be separated from the susceptor 217 above the susceptor 217 heated to a predetermined temperature within a range of 25 [° C.] to 900 [° C.]. Further, the inside of the processing chamber 201 is evacuated by the vacuum pump 246 through the gas exhaust pipe 231a, and the pressure in the processing chamber 201 is set to a predetermined value within a range of 0.1 [Pa] to 266 [Pa], for example. The vacuum pump 246 is kept operating until at least a (G) substrate unloading process described later is completed.

  By maintaining the above state for a predetermined time, for example, for 40 [seconds] to 60 [seconds], the wafer 1 is gradually heated from the surface on the susceptor 217 side by the radiation of heat from the susceptor 217 and is heated to a predetermined temperature. It becomes. At this time, since the wafer 1 is supported away from the susceptor 217, the surface of the wafer 1 on the susceptor 217 side is prevented from being heated rapidly, and the surface of the wafer 1 on the susceptor 217 side (hereinafter referred to as the lower surface). The temperature rise rate difference between the opposite surface (hereinafter also referred to as the upper surface) and the warpage of the wafer 1 can be suppressed.

  Further, the distance between the wafer 1 and the susceptor 217 is preferably adjusted according to the difference between the temperature of the wafer 1 at the time of loading (for example, room temperature) and the temperature of the susceptor 217 heated to a predetermined temperature. That is, when the difference between the temperature of the wafer 1 and the temperature of the susceptor 217 is large, by increasing the distance between the wafer 1 and the susceptor 217, the lower surface of the wafer 1 is rapidly heated, and the rate of temperature increase with the upper surface is increased. Suppresses the difference. When the difference between the temperature of the wafer 1 and the temperature of the susceptor 217 is small, the temperature of the wafer 1 is accelerated by increasing the distance between the wafer 1 and the susceptor 217 so that the wafer 1 reaches a predetermined temperature. Can be shortened. The distance between the wafer 1 and the susceptor 217 can be adjusted by elevating the susceptor 217 by the susceptor elevating mechanism 268, for example.

(C) Substrate Transfer Process After a predetermined time has elapsed, the wafer 1 heated to a predetermined temperature is transferred from the wafer push-up pins (lift pins) 266 to the susceptor 217. That is, the susceptor 217 is raised by the susceptor lifting mechanism 268 to support the wafer 1 on the upper surface of the susceptor 217. Thereafter, the wafer 1 is raised to a predetermined processing position.

(D) Process gas supply process Next, a nitrogen-containing gas (N ₂ gas in the present embodiment) and hydrogen (H ₂ ) gas as a modified process gas for nitriding the oxide film on the surface of the wafer 1 are processed. Supply into the chamber 201. As described above, the hydrogen gas is used for adjusting the nitrogen concentration in the processing chamber 201 and improving the nitriding efficiency of the oxide film on the surface of the wafer 1.
Specifically, the opening / closing valve (see the opening / closing valve 53 in FIG. 1) is opened, and the H ₂ gas and N ₂ gas are supplied into the processing chamber 201 through the buffer chamber or the like while controlling the flow rate with a mass flow controller (not shown). Supply. At this time, the flow rates of H ₂ gas and N ₂ gas are set to predetermined values within a range of, for example, 50 [sccm] or more and 2000 [sccm] or less. Further, the opening degree of the APC 242 is adjusted and the inside of the processing chamber 201 is exhausted so that the pressure in the processing chamber 201 becomes, for example, a predetermined pressure in a range of 1 [Pa] to 266 [Pa]. In this manner, the H ₂ gas and the N ₂ gas are continuously supplied until the E plasma processing step described later is completed while the inside of the processing chamber 201 is appropriately exhausted.
In the process gas supply step (D), an opening / closing valve may be provided for each type of gas, and the opening / closing of the plurality of opening / closing valves may be controlled as necessary, and the flow rate may be controlled by a mass flow controller. For example, in addition to H ₂ gas and N ₂ gas, a valve for supplying Ar gas is provided, and Ar gas is supplied while H ₂ gas and N ₂ gas are supplied to dilute the reforming process gas. Anyway.

(E) Plasma processing step After the pressure in the processing chamber 201 is stabilized, for example, a range of 150 [W] or more and 1000 [W] or less from the high frequency power sources 273a and 273b to the electrode 215 via the matching units 272a and 272b. Application of high-frequency power having a predetermined output value is started. At this time, the impedance variable mechanism 274 (not shown) is previously controlled to a predetermined impedance value, and the bias voltage of the susceptor 217 is controlled to a predetermined value. As a result, plasma discharge is generated in the processing chamber 201, more specifically, in the first plasma generation region 224 above the wafer 1 to excite N ₂ gas and H ₂ gas. For example, the N ₂ gas and the H ₂ gas are converted into plasma and dissociated to generate reactive species such as nitrogen active species containing nitrogen (N ₂ ). The surface of the wafer 1 is subjected to a nitridation process, which is a modification process, by nitrogen active species generated by exciting the N ₂ gas.
Thereafter, after a predetermined processing time (5 [seconds] to 120 [seconds]), for example, 45 [seconds] has elapsed, the application of power from the high frequency power supply 273 is stopped, and plasma discharge in the processing chamber 201 is performed. Stop. Further, the valve is closed, and supply of H ₂ gas and N ₂ gas into the processing chamber 201 is stopped. Thus, the E plasma treatment process is completed.

(F exhaust process)
After the supply of H ₂ gas and N ₂ gas is stopped, the inside of the processing chamber 201 is exhausted using the gas exhaust pipe 231a. Thereby, the H ₂ gas and N ₂ gas in the processing chamber 201, the gas after the N ₂ gas reacts, and the like are exhausted to the outside of the processing chamber 201. Thereafter, the opening degree of the APC 242 is adjusted, and the pressure in the processing chamber 201 is adjusted to the same pressure (for example, 100 [Pa]) as the substrate transfer chamber adjacent to the processing chamber 201 (the unloading destination of the wafer 1). .

(G) Substrate Unloading Step After the inside of the processing chamber 201 reaches a predetermined pressure, the susceptor 217 is lowered to the transfer position of the wafer 1 and the wafer 1 is supported on the wafer push-up pins (lift pins) 266. Then, the gate valve 244 is opened, and the wafer 1 is carried out of the processing chamber 201 using a transfer mechanism not shown in the drawing. Thus, the product substrate processing step is completed.

(2-2) Metal Removal Step Next, the metal removal step is performed in order to prevent the product wafer from being contaminated with metal in the processing chamber 201 in the product substrate processing step as the main processing step, in particular, the susceptor 217 and the processing chamber 201. This is performed before or after the product substrate processing step so as not to be contaminated by metals such as sodium (Na) coming out of the quartz material of the inner wall. For example, it is performed after the product substrate processing step is performed a predetermined number of times.
In the metal removal step, a space is formed between the dummy wafer and the susceptor 217 in a state where the dummy wafer is lifted from the upper surface of the susceptor 217. By performing plasma processing in this state, plasma is generated in the formed space (second plasma generation region), and metal such as sodium existing in the susceptor 217 or the inner wall of the processing chamber 201 is struck out. The deposited metal is mainly attached to the back surface of the dummy wafer 200. The rear surface of the dummy wafer is a surface facing the susceptor 217 and is the lower surface of the dummy wafer. Then, by collecting the dummy wafer to which the metal is attached, the metal in the processing chamber 201 can be removed, thereby suppressing metal contamination of the product substrate in the product substrate processing step.
As a dummy wafer for removing metal, a bare wafer having no film formed on the front surface or the back surface is used. Preferably, a new wafer or a bare wafer cleaned with a controlled apparatus and having little metal contamination is preferable.
In the metal removal process, a stronger plasma than the first plasma generation region 224 is generated in the second plasma generation region when knocking out metal such as sodium existing in the susceptor 217 or the inner wall of the processing chamber 201. It is desirable to make it. Note that generating a plasma stronger than the first plasma generation region 224 in the second plasma generation region described above means that the charge density of the second plasma generation region is higher than the charge density of the first plasma generation region 224. It means high (a large amount of ions and radicals).

As described above, also in the fourth embodiment, the same effects as in the first embodiment can be obtained by applying the second or third embodiment.
That is, it is possible to protect the temperature sensor by preventing microwave propagation and prevent erroneous detection. Further, by preventing propagation, a normal sealing material can be protected so that particles are not generated. Moreover, even if particles resulting from a metal compound are generated in the sealing agent, the particles can be removed. Furthermore, it can respond also to a vacuum vessel by using this technique.

Next, a fifth embodiment of the present invention will be described below with reference to FIG. The fifth embodiment is another embodiment of the semiconductor manufacturing apparatus of the present invention. FIG. 10 is a vertical sectional view showing a configuration of an ECR (Electron Cyclotron Resonance) type plasma processing apparatus as a semiconductor manufacturing apparatus of the present invention. Accordingly, only the temperature measurement unit of Example 2 or Example 3 can be applied as in Example 1 and Example 4 except that FIG. 1 is replaced with FIG. In the detailed description of the configuration according to the fifth embodiment, constituent elements having the same functions as those of the first to fourth embodiments are denoted by the same reference numerals and omitted. Also, the gas supply unit is not shown.
A configuration example of the controller according to the substrate processing apparatus 400 is the same as that in FIG.
Further, since the temperature measurement unit is the same as the temperature measurement unit 331 of FIG. 1, it is not shown in FIG. In short, the temperature measurement unit 331 may satisfy the function of measuring the temperature of the processing object (wafer 1) placed in the cavity and outputting the measurement result to the controller 80. Therefore, the installation location of the temperature measurement unit is not limited to the upper wall of the processing container 18 and may be provided on the side wall.
The ECR plasma processing apparatus 400 according to the fifth embodiment includes a matching unit 272b that supplies a microwave to generate plasma, a high-frequency power source 273b, a microwave introduction tube 415a, and a dielectric coil 415b. The microwave introduction tube 415 a is laid on the ceiling wall of the processing container 203. The dielectric coil 415 b is laid outside the outer peripheral wall of the processing container 203.

Also in the fifth embodiment, in the metal removal process and the product substrate process, a processing gas containing hydrogen atoms, nitrogen atoms, and the like is supplied from the gas supply pipe 232 into the processing chamber 201 via the gas inlet 234. Further, before and after the gas supply, the microwave 418 a is introduced into the microwave introduction tube 415 a, and the microwave 418 a is radiated to the processing chamber 201. By the microwave 418a and the high frequency power from the dielectric coil 415b, the supplied processing gas can be excited as a plasma state to generate active species. As the microwave, for example, a variable frequency microwave (VFM), a fixed frequency microwave (FFM), or the like can be used.
And the metal removal process of this invention is performed in the state which floated the dummy wafer from the susceptor upper surface.

As described above, also in the fifth embodiment, the same effects as those of the first or fourth embodiment can be obtained by applying the temperature measurement unit according to the second or third embodiment.
That is, it is possible to protect the temperature sensor by preventing microwave propagation and prevent erroneous detection. Further, by preventing propagation, a normal sealing material can be protected so that particles are not generated. Moreover, even if particles resulting from a metal compound are generated in the sealing agent, the particles can be removed. Furthermore, it can respond also to a vacuum vessel by using this technique.

Next, a sixth embodiment of the present invention will be described below.
In the sixth embodiment, only the temperature measurement unit of the second or third embodiment is applicable as in the first, fourth, or fifth embodiment, except that FIG. It is. In the detailed description of the configuration according to the sixth embodiment, constituent elements having the same functions as those of the first embodiment, the fourth embodiment, and the fifth embodiment are denoted by the same reference numerals and omitted. Also, the gas supply unit is not shown.

(1) Configuration of Substrate Processing Apparatus The configuration of the substrate processing apparatus will be described with reference to FIG.
FIG. 11 is a vertical sectional view for explaining an MMT type plasma processing apparatus according to an embodiment of the substrate processing apparatus of the present invention. An MMT type plasma processing apparatus, which is one of the substrate processing apparatuses of the present invention, uses a modified magnetron type plasma source that generates high density plasma by an electric field and a magnetic field, and uses a silicon (Si) substrate. A modified magnetron type plasma processing apparatus (hereinafter, referred to as an MMT apparatus) for plasma processing the wafer 1. The MMT apparatus 500 carries a single wafer 1 into a processing chamber 201 that maintains hermeticity, and causes a magnetron discharge by applying high-frequency voltages to various gases supplied into the processing chamber 201 under a certain pressure. It is configured as follows. According to the MMT apparatus 500, for example, a processing gas or the like is excited by such a mechanism to perform diffusion processing such as oxidation or nitridation on the wafer 1, to form a thin film, or to etch the surface of the wafer 1 or the like. Plasma treatment can be performed.

(Processing room)
The MMT apparatus 500 includes a processing furnace 202 that performs plasma processing on the wafer 1. The processing furnace 202 is provided with a processing container 203 that constitutes a processing chamber 201. That is, the inside of the wall forming the processing container 203 is the processing chamber 201. The processing container 203 includes a dome-shaped upper container 210 that is a first container and a bowl-shaped lower container 211 that is a second container. The processing chamber 201 is formed by the upper container 210 covering the lower container 211. The upper container 210 is made of a non-metallic material such as aluminum oxide (Al ₂ O ₃ ) or quartz (SiO ₂ ), for example, and the lower container 211 is made of aluminum (Al), for example. A quartz plate (not shown) for preventing metal contamination is installed inside the processing chamber 201.

  A gate valve 244 is provided on the lower side wall of the lower container 211. When the gate valve 244 is open, the wafer 1 is transferred from the transfer chamber (not shown) into the process chamber 201 using the transfer mechanism (not shown), or the wafer 1 is transferred from the process chamber 201 to the transfer chamber. It is comprised so that it can carry out. Further, the gate valve 244 is configured to be a gate valve that keeps the airtightness in the processing chamber 201 when closed.

(Susceptor)
A susceptor 217 that supports a wafer 1 as a processing substrate is disposed at the bottom center in the processing chamber 201. The susceptor 217 is made of a non-metallic material such as aluminum nitride (AlN), ceramics, quartz, or the like, and is configured to reduce metal contamination on a film or the like formed on the wafer 1. .
A heater 217c as a heating mechanism is integrally embedded in the susceptor 217. The heater 217c is configured to heat the surface of the wafer 1 to, for example, about 25 [° C.] to 700 [° C.] when electric power is supplied.

  The susceptor 217 is electrically insulated from the lower container 211. An impedance adjustment electrode 217b is provided inside the susceptor 217. The impedance adjustment electrode 217b is grounded via an impedance variable mechanism 274 as an impedance adjustment unit. The impedance adjustment electrode 217b functions as a second electrode for the cylindrical electrode 215 serving as the first electrode. The impedance variable mechanism 274 includes a coil and a variable capacitor. By controlling the inductance and resistance of the coil and the capacitance value of the variable capacitor, the potential (bias) of the wafer 1 is passed through the impedance adjustment electrode 217b and the susceptor 217. Voltage) can be controlled. Thus, the impedance variable mechanism 274 constitutes a substrate potential changing unit that changes the potential of the wafer 1.

(Substrate potential changing part)
The susceptor 217 is a substrate mounting table on which the wafer 1 is mounted. The susceptor 217 is provided with a susceptor lifting mechanism 268 that lifts and lowers the susceptor 217. The susceptor 217 is provided with a through hole 217 a, while a wafer push-up pin 266 is provided on the bottom surface of the lower container 211. The through holes 217a and the wafer push-up pins 266 are provided at least at three locations at positions facing each other. As shown in FIG. 11, when the susceptor 217 is lowered by the susceptor elevating mechanism 268, the wafer push-up pin 266 penetrates the through-hole 217 a in a non-contact state with the susceptor 217. The wafer 1 carried into the processing chamber 201 is temporarily supported. Further, when the susceptor 217 is raised by the susceptor elevating mechanism 268, the wafer 1 is transferred from the wafer push-up pins 266 to the susceptor 217.
The wafer push-up pins 266 function as a substrate support unit that supports a dummy wafer (described later) in the metal removal process.
The upper surface of the substrate mounting table (susceptor 217) described above may be substantially flat, may have a structure in which one or more protrusions (embosses) are provided on the upper surface, or may have a structure in which countersinks are provided. Further, a cover that covers the substrate mounting table may be provided on the upper surface of the substrate mounting table.
In addition, when a countersink or emboss is provided on the upper surface of the substrate mounting table to form a complicated structure, it is difficult to remove the metal by the conventional metal removal method. However, the metal removal process can be performed efficiently. It can be carried out.

(Gas supply part)
A gas supply pipe 232 and a shower head 236 are provided above the processing chamber 201, that is, above the upper container 210. The shower head 236 includes a cap-shaped lid 233, a gas inlet 234, a buffer chamber 237, an opening 238, a shielding plate 240, and a gas outlet 239, and various gases are contained in the processing chamber 201. It is configured so that it can be supplied to. The buffer chamber 237 is configured as a dispersion space for dispersing the gas introduced from the gas introduction port 234.

The gas supply pipe 232 has a downstream end of a hydrogen-containing gas supply pipe 232a that supplies hydrogen (H ₂ ) gas as a hydrogen-containing gas, and a downstream end of 232b that supplies nitrogen (N ₂ ) gas as a nitrogen-containing gas. A downstream end of an oxygen-containing gas supply pipe 232c that supplies oxygen (O ₂ ) gas as an oxygen-containing gas, and a lower end of a rare gas-containing gas supply pipe 232d that supplies argon (Ar) gas as a rare gas-containing gas And are connected to join.
The hydrogen-containing gas supply pipe 232a is provided with an H ₂ gas supply source 250a, a mass flow controller 252a as a flow rate control device, and a valve 253a as an on-off valve in order from the upstream side.
The nitrogen-containing gas supply pipe 232b is provided with an N ₂ gas supply source 250b, a mass flow controller 252b as a flow rate control device, and a valve 253b as an on-off valve in order from the upstream side.
The oxygen-containing gas supply pipe 232c is provided with an O ₂ gas supply source 250c, a mass flow controller 252c as a flow rate control device, and a valve 253c as an on-off valve in order from the upstream side.
The rare gas-containing gas supply pipe 232d is provided with an Ar gas supply pipe 250d, a mass flow controller 252d as a flow rate control device, and a valve 253d as an on-off valve in order from the upstream side.

  A valve 254 is provided on the downstream side where the hydrogen-containing gas supply pipe 232a, the nitrogen-containing gas supply pipe 232b, the oxygen-containing gas supply pipe 232c, and the rare gas-containing gas supply pipe 232d merge, and gas is introduced through the gasket 203b. Connected to the mouth 234. By opening the valves 253a, 253b, 253c, 253d, and 254, while adjusting the flow rate of each gas by the mass flow controllers 252a, 252b, 252c, and 252d, the hydrogen is supplied through the gas supply pipes 232a, 232b, 232c, and 232d. It is configured so that the containing gas, the nitrogen-containing gas, the oxygen-containing gas, and the rare gas-containing gas can be supplied into the processing chamber 201.

The gas supply unit of FIG. 11 is mainly configured by the gas inlet 234, the gas supply pipe 232, the mass flow controllers 252a, 252b, 252c, and 252d, and the valves 253a, 253b, 253c, 253d, and 254. Shower head 236 (cover 233, buffer chamber 237, opening 238, shielding plate 240 and gas outlet 239), hydrogen-containing gas supply pipe 232a, nitrogen-containing gas supply pipe 232b, oxygen-containing gas supply pipe 232c, H _Two gas supply sources 250a, an N ₂ gas supply source 250b, an O ₂ gas supply source 250c, and a rare gas-containing gas supply source 250d may be included in the gas supply unit.

(Gas exhaust part)
A gas exhaust port 235 for exhausting gas from the processing chamber 201 is provided on the side wall of the lower container 211. The gas exhaust port 235 is connected to the upstream end of the gas exhaust pipe 231a. The gas exhaust port 235 is provided with a diaphragm gauge 245 as a pressure control sensor such as a capacitance manometer. The diaphragm gauge 245 is configured to be able to measure up to 2 [Torr] (266 [Pa]) as an upper limit pressure, for example.
The gas exhaust pipe 231a includes, in order from the upstream side, an APC (Auto Pressure Controller) 242 as a pressure regulator (pressure regulator), a turbo molecular pump 246a as a vacuum exhaust device (vacuum pump), and a main valve as an on-off valve. 243a and a dry pump 246b as an evacuation device are provided.

The APC 242 can be evacuated or stopped by opening and closing the valve, and further adjusting the pressure in the processing chamber 201 by adjusting the opening of the valve based on pressure information measured by a diaphragm gauge 245 as a vacuum gauge. This is an open / close valve capable of The substrate processing using the MMT apparatus 400 is performed under a pressure of 240 [Pa] or less, for example. By setting the upper limit pressure of the diaphragm gauge 245 to, for example, 2 [Torr] (266 [Pa]), the measurement accuracy in the pressure region of the substrate processing is improved, and high pressure controllability and resolution can be obtained during substrate processing. it can.
Here, a diaphragm gauge is shown, but a Pirani gauge or an ion gauge may be used.

For example, a broadband type can be used as the turbo molecular pump 246a. In this case, the maximum pressure on the upstream side of the turbo molecular pump 246a, that is, the primary side of the turbo molecular pump 246a can be set up to 400 [Pa]. Has been.
A gas exhaust pipe 231b constituting a slow exhaust line is provided on the downstream side of the turbo molecular pump 246a, that is, on the secondary side of the turbo molecular pump 246a. Specifically, the upstream end of the gas exhaust pipe 231b is connected between the turbo molecular pump 246a and the main valve 243a of the gas exhaust pipe 231a. A downstream end of the gas exhaust pipe 231b is connected between the main valve 243a of the gas exhaust pipe 231a and the dry pump 246b. For example, 3/8 [inch] piping is used for the gas exhaust pipe 231b, and a slow exhaust valve 243b as an on-off valve is provided.
The gas exhaust port according to the present embodiment is mainly configured by the gas exhaust port 235, the vacuum gauge 245, the gas exhaust pipe 231a, and the APC 242. The turbo molecular pump 246a, the main valve 243a, the dry pump 246b, the gas exhaust pipe 231b, and the slow exhaust valve 243b may be included in the gas exhaust unit.

(Excitation part)
Next, a plasma generation unit as an excitation unit will be described.
A cylindrical electrode 215 as a first electrode is provided on the outer periphery of the processing chamber 201, that is, outside the side wall of the upper container 210 so as to surround the processing chamber 201. The electrode 215 is formed in a cylindrical shape, for example, a cylindrical shape. The electrode 215 is connected to a high frequency power source 273 having a frequency of 13.56 [MHz], for example, through which a high frequency power is applied via a matching unit 272 that performs impedance matching.
Upper and lower magnets 216a and 216b are attached to upper and lower ends of the outer surface of the electrode 215, respectively. Both the upper magnet 216a and the lower magnet 216b are formed of a permanent magnet formed in a cylindrical shape, for example, a cylindrical shape. The upper magnet 216a and the lower magnet 216b have magnetic poles on the surface side facing the processing chamber 201 and on the opposite surface side. The direction of the magnetic poles of the upper magnet 216a and the lower magnet 216b is arranged to be opposite to each other. That is, the magnetic poles on the surface side of the upper magnet 216a and the lower magnet 216b facing the processing chamber 201 are different from each other. Thereby, a magnetic force line in the cylindrical axis direction is formed along the inner surface of the electrode 215.

A magnetic field is generated by the upper magnet 216a and the lower magnet 216b, and various gases are introduced into the processing chamber 201. Then, a high frequency power is supplied to the electrode 215 to form an electric field, thereby forming a first electric field in the processing chamber 201. Magnetron discharge plasma is generated in one plasma generation region 224. By causing the above-described electric and magnetic fields to circulate around the emitted electrons, the ionization rate of plasma is increased, and a long-life and high-density plasma can be generated.
The electrode 215, the upper magnet 216a, and the lower magnet 216b are made of a metal that effectively shields the electric field and magnetic field so that the electric field and magnetic field formed by these do not adversely affect other devices and the external environment. A shielding plate 223 is provided.
The first electrode (electrode 215), the matching unit 272, the high frequency power supply 273, the upper magnet 216a, and the lower magnet 216b mainly constitute a plasma generation unit as an excitation unit according to the present embodiment.

(Control part)
The controller 80 as a control unit controls each device of the substrate processing apparatus such as a gas supply unit, a gas exhaust unit, and an excitation unit that constitutes the substrate processing apparatus 500. For example, the controller 80 controls the diaphragm gauge 245, the APC 242, the turbo molecular pump 246a, the dry pump 246b, the main valve 243a, and the slow exhaust valve 243b through the signal line A. Further, for example, the controller 80 controls the susceptor elevating mechanism 268 through the signal line B, and controls the heater 217 c and the impedance variable mechanism 274 through the signal line C. For example, the controller 80 controls the gate valve 244 through the signal line D, and controls the matching unit 272 and the high-frequency power source 273 through the signal line E. For example, the controller 80 controls the mass flow controllers 252a, 252b, 252c and the valves 253a, 253b, 253c, 254 through the signal line F, and controls the lamp heating unit 280 through the signal line G. For example, the controller 80 acquires temperature information from the temperature sensor 331 of the temperature measurement unit 31 through the signal line H, and controls each device based on the acquired temperature information.
A configuration example of a controller according to the substrate processing apparatus 500 of FIG. 11 is the same as that of FIG.
Further, since the temperature measurement unit is the same as the temperature measurement unit 331 of FIG. 1, it is not shown in FIG. In short, the temperature measurement unit 331 may satisfy the function of measuring the temperature of the processing object (wafer 1) placed in the cavity and outputting the measurement result to the controller 80. Therefore, the installation location of the temperature measurement unit is not limited to the upper wall of the processing container 18 and may be provided on the side wall.

(Substrate transfer chamber)
Further, the MMT apparatus 400 is provided with a substrate transfer chamber (not shown) adjacent to the processing chamber 201 via the gate valve 244. A substrate transfer chamber (not shown) is provided in the substrate transfer chamber, and the substrate can be transferred into and out of the processing furnace 202. Note that the temperature in the substrate transfer chamber is room temperature, and the pressure is maintained at 0.1 [Pa] or more and 266 [Pa] or less, for example, about 100 [Pa], and particles are generated in the substrate transfer chamber. However, it is configured so that particles do not fly due to the operation of the transport mechanism.

(2) Substrate Processing Step Next, a substrate processing step using the substrate processing apparatus 500 of the present invention will be described. The substrate processing step includes (2-1) a main substrate processing step for processing a product substrate, and (2-2) a metal removal step using a dummy substrate (dummy wafer) that is not a product substrate, for example. . This substrate processing step is performed by the above-described MMT apparatus 300 as one step of a semiconductor device manufacturing process, for example. In the product substrate processing step, a nitridation process is performed as a modification process on a processing substrate (product substrate) for semiconductor chip production, for example, an oxide film formed on the surface of a wafer 1 made of silicon (Si). In the following description, the operation of each device constituting the MMT apparatus 300 is controlled by the controller 80.

As described above, also in the sixth embodiment, by applying the second or third embodiment, the same effects as those of the first, fourth, or fifth embodiment can be obtained.
That is, it is possible to protect the temperature sensor by preventing microwave propagation and prevent erroneous detection. Further, by preventing propagation, a normal sealing material can be protected so that particles are not generated. Moreover, even if particles resulting from a metal compound are generated in the sealing agent, the particles can be removed. Furthermore, it can respond also to a vacuum vessel by using this technique.

  In this manner, in the processing apparatus using various forms of electromagnetic waves as described above, the temperature sensor can be protected from electromagnetic waves by configuring the above-described temperature measurement unit mounting portion. False detection can be prevented. Further, since the sealing material can be protected by preventing propagation, particles can be prevented from being generated. In the apparatus using plasma, even if particles are generated by performing the above-described metal removal step, particles and metal contamination can be removed.

  Hereinafter, preferred embodiments of the present invention will be additionally described.

(Appendix 1)
According to one aspect of the invention,
A processing container for containing a substrate;
An electromagnetic wave irradiation unit for irradiating the substrate with an electromagnetic wave;
A temperature measurement unit mounting portion provided on a wall of the processing container, wherein a diameter of an opening to the processing container is equal to or less than a quarter of the wavelength of the electromagnetic wave;
A temperature sensor provided in the temperature measurement unit for measuring a radiation temperature of the substrate;
A substrate processing apparatus is provided.
As a result, by reducing the diameter of the opening to λ / 4 or less, the electromagnetic wave reaching the temperature sensor is attenuated, and deterioration due to heating of the O-ring provided in the temperature sensor mounting portion and malfunction of the temperature sensor are prevented. Can do.

(Appendix 2)
The substrate processing apparatus according to appendix 1, preferably,
A discharge generation prevention unit is provided on the processing chamber side of the opening.
As described above, by providing the discharge generation preventing unit, it is possible to prevent the generation of arc due to the concentration of electromagnetic waves.

(Appendix 3)
The substrate processing apparatus according to any one of Supplementary Note 1 and Supplementary Note 2, wherein the opening preferably has a first opening having a diameter of ¼ or less of a wavelength λ of the electromagnetic wave, and the first The second opening is larger than the first opening.
As a result, by reducing the diameter of the opening to λ / 4 or less, the electromagnetic wave reaching the temperature sensor is attenuated, and deterioration due to heating of the O-ring provided in the temperature sensor mounting portion and malfunction of the temperature sensor are prevented. Moreover, the concentration of electromagnetic waves can be suppressed, and arcing due to the concentration of electromagnetic waves can be prevented.

(Appendix 4)
The substrate processing apparatus according to any one of appendix 1 to appendix 3, wherein
The thickness of the wall of the processing vessel in which the temperature measurement unit is provided is equal to or more than a quarter of the wavelength of the electromagnetic wave.
As a result, the thickness of the wall of the processing container (distance from the inside of the wall to the temperature sensor) is set to λ / 4 or more of the wavelength λ of the electromagnetic wave, thereby heating the O-ring provided in the temperature measurement unit and the temperature sensor. Can be prevented from malfunctioning.

(Appendix 5)
The substrate processing apparatus according to any one of supplementary notes 1 to 4, preferably,
The opening is filled with a dielectric.

(Appendix 6)
The substrate processing apparatus according to appendix 5, preferably,
The dielectric includes at least one of silicon oxide, aluminum oxide, and aluminum nitride.

(Appendix 7)
The substrate processing apparatus according to any one of supplementary notes 1 to 6, preferably,
A seal member is provided outside the opening.

(Appendix 8)
According to yet another aspect,
Irradiating the substrate accommodated in the processing container with electromagnetic waves;
A temperature sensor for measuring a radiation temperature attached to a temperature measurement unit mounting portion provided on a wall of the processing vessel and having a diameter of an opening to the processing vessel being equal to or less than a quarter of the wavelength of the electromagnetic wave. Measuring the radiation temperature of the substrate;
A method for manufacturing a semiconductor device comprising:

(Appendix 9)
A method for manufacturing a semiconductor device according to appendix 8, preferably,
The opening has a first opening having a diameter that is not more than a quarter of the wavelength of the electromagnetic wave;
A second opening larger than the first opening;

(Appendix 10)
A method for manufacturing a semiconductor device according to any one of appendix 8 and appendix 9, preferably,
A discharge generation prevention unit is provided on the processing chamber side of the opening.

(Appendix 11)
A method of manufacturing a semiconductor device according to any one of appendix 8 to appendix 10, wherein
The thickness of the wall of the processing container provided with the temperature measurement unit mounting portion is not less than one quarter of the wavelength of the electromagnetic wave.

(Appendix 12)
A method of manufacturing a semiconductor device according to any one of appendix 8 to appendix 11, wherein
The opening has a dielectric.

(Appendix 13)
The method for manufacturing a semiconductor device according to appendix 12, preferably,
The dielectric includes at least one of silicon oxide, aluminum oxide, and aluminum nitride.

(Appendix 14)
According to yet another aspect,
A procedure of irradiating the substrate contained in the processing container with electromagnetic waves;
A temperature sensor for measuring a radiation temperature attached to a temperature measurement unit mounting portion provided on a wall of the processing vessel and having a diameter of an opening to the processing vessel being equal to or less than a quarter of the wavelength of the electromagnetic wave. Measuring the radiation temperature of the substrate;
A program for causing a computer to execute is provided.

(Appendix 15)
According to yet another aspect,
A procedure of irradiating the substrate contained in the processing container with electromagnetic waves;
A temperature sensor for measuring a radiation temperature attached to a temperature measurement unit mounting portion provided on a wall of the processing vessel and having a diameter of an opening to the processing vessel being equal to or less than a quarter of the wavelength of the electromagnetic wave. Measuring the radiation temperature of the substrate;
A recording medium on which a program for causing a computer to execute is recorded is provided.

DESCRIPTION OF SYMBOLS 1: Wafer 11: Cavity (cavity resonator) 13: Lift pin 13a: Upper end 17: Susceptor 18: Processing container 19: Microwave supply part 20: Microwave generation part 21: Waveguide 22: Waveguide opening, 23: Rotating shaft, 24: Lifting / rotating mechanism, 25: Susceptor, 26: Matching mechanism, 27: Substrate support section, 31: Temperature measurement unit, 33: Temperature sensor mounting section, 34, 35: Vacuum Seal: 36: Adapter, 37: Screw, 38: Presser fitting, 52: Gas supply pipe, 53: Open / close valve, 53: Flow control device, 55: Gas supply source, 60: Gas discharge section, 62: Gas discharge pipe, 63: Pressure adjustment valve, 64: Vacuum pump, 71: Wafer transfer port, 72: Gate valve, 73: Gate valve drive unit, 74: Seal unit, 80: Controller Control unit), 100, 200, 300, 400, 500: substrate processing apparatus, 102: CPU, 104: storage device, 106: I / O port, 108: internal bus, 204: input / output device, 206: external storage device 331: Temperature measurement unit, 332: Temperature sensor mounting upper part, 333: Temperature sensor mounting lower part, 334, 335, 339: O-ring, 336: Dielectric, 337, 338: Screw, 341: Through hole, 342: Chamfering Part, D ₀ : measurement window diameter, D ₀ ′: measurement instrument diameter, L ₁ : thickness of the upper wall of the processing container.

Claims (3)

A processing container for containing a substrate;
An electromagnetic wave irradiation unit for irradiating the substrate with an electromagnetic wave;
A temperature measurement unit mounting portion provided on a wall of the processing container, wherein a diameter of an opening to the processing container is equal to or less than a quarter of the wavelength of the electromagnetic wave;
A temperature sensor provided at the temperature measurement unit mounting portion and measuring a radiation temperature of the substrate;
A substrate processing apparatus. Irradiating the substrate accommodated in the processing container with electromagnetic waves;
A temperature sensor for measuring a radiation temperature attached to a temperature measurement unit mounting portion provided on a wall of the processing vessel and having a diameter of an opening to the processing vessel being equal to or less than a quarter of the wavelength of the electromagnetic wave. Measuring the radiation temperature of the substrate;
A method for manufacturing a semiconductor device comprising: A procedure of irradiating the substrate contained in the processing container with electromagnetic waves;
A temperature sensor for measuring a radiation temperature attached to a temperature measurement unit mounting portion provided on a wall of the processing vessel and having a diameter of an opening to the processing vessel being equal to or less than a quarter of the wavelength of the electromagnetic wave. Measuring the radiation temperature of the substrate;
A program that causes a computer to execute.

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