JP2014175612A - Heat radiation structure of terminal and semiconductor device - Google Patents

Heat radiation structure of terminal and semiconductor device Download PDF

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JP2014175612A
JP2014175612A JP2013049423A JP2013049423A JP2014175612A JP 2014175612 A JP2014175612 A JP 2014175612A JP 2013049423 A JP2013049423 A JP 2013049423A JP 2013049423 A JP2013049423 A JP 2013049423A JP 2014175612 A JP2014175612 A JP 2014175612A
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terminal
heat
heat dissipation
conductive substrate
metal member
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JP6186142B2 (en
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Koji Arioka
幸史 有岡
Hideaki Konagaya
秀明 小長谷
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Shindengen Electric Manufacturing Co Ltd
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Shindengen Electric Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

PROBLEM TO BE SOLVED: To provide a heat radiation structure of a terminal which improves heat radiation effect for heat generated in the terminal thereby securing sufficient current carrying capacity, and to provide a semiconductor device including the heat radiation structure.SOLUTION: A heat radiation structure of a terminal includes: a conductive substrate 11 on which an electronic component is mounted; a terminal 13 which is disposed on the conductive substrate 11 through an insulation layer 12, is electrically connected with the electronic component, and generates heat by energization; and a heat radiation metal member 14 which is disposed in the insulation layer 12 and is provided so as to contact with a conductive substrate side surface 13a of the terminal 13. The conductive substrate 11 and the heat radiation metal member 14 are electrically insulated by the insulation layer 12.

Description

本発明は、端子の放熱構造及び半導体装置に関する。   The present invention relates to a terminal heat dissipation structure and a semiconductor device.

従来、通電により発熱する電子部品（発熱部品）の熱を逃がす放熱構造としては、例えば特許文献１のように、ヒートシンク上に発熱部品を搭載すると共に、発熱部品とリードフレームとをボンディングワイヤにより結線した上で、ヒートシンクの下面が露出するように、発熱部品、リードフレーム、ボンディングワイヤ及びヒートシンクを樹脂で封止した構造がある。このような放熱構造では、発熱部品の熱をヒートシンクから外部に逃がすことができる。   Conventionally, as a heat dissipation structure that releases heat of an electronic component (heat generating component) that generates heat by energization, for example, as disclosed in Patent Document 1, a heat generating component is mounted on a heat sink, and the heat generating component and a lead frame are connected by a bonding wire. In addition, there is a structure in which a heat generating component, a lead frame, a bonding wire, and a heat sink are sealed with a resin so that the lower surface of the heat sink is exposed. In such a heat dissipation structure, the heat of the heat generating component can be released from the heat sink to the outside.

特開２００３−１１５６８１号公報JP 2003-115681 A

ところで、上記のような従来の構造では、発熱部品だけではなく、リードフレーム等の接続部材も通電により発熱する。特に、このような接続部材の中でも、電源電流が流れるような端子（電力端子）においては、大電流が流れるため、発熱が大きい。また、発熱部品や外部（配線）の熱が電力端子に伝わることもある。
しかしながら、上記従来のような構造では、他の部材と絶縁させるように、電力端子や、リードフレームや端子等の接続端子は熱伝導性の低い絶縁樹脂によって覆われているため、これら電力端子等の熱（ジュール熱）を効率よくヒートシンクに逃がすことができない欠点がある。その結果、電力端子等の温度が上昇して電流容量を十分に確保できない、という問題が生じる。 By the way, in the conventional structure as described above, not only the heat-generating parts but also the connection members such as the lead frame generate heat when energized. In particular, among such connection members, a large current flows in a terminal (power terminal) through which a power supply current flows, and thus heat generation is large. In addition, heat from heat-generating components and external (wiring) may be transmitted to the power terminal.
However, in the conventional structure, the power terminals and the connection terminals such as the lead frame and the terminals are covered with an insulating resin having low thermal conductivity so as to be insulated from other members. The heat (joule heat) cannot be efficiently released to the heat sink. As a result, there arises a problem that the temperature of the power terminal or the like rises and current capacity cannot be sufficiently secured.

本発明は、上述した事情に鑑みたものであって、端子において発生した熱に対する放熱効果を向上させることにより、電流容量を十分に確保することが可能な端子の放熱構造、及び当該放熱構造を備えた半導体装置を提供することを目的とする。
なお、本明細書における「端子」は、電源電流が流れるような端子（電力端子）、リードフレーム、接続端子等を包含するものである。 The present invention has been made in view of the above-described circumstances, and by improving the heat dissipation effect for the heat generated in the terminal, a terminal heat dissipation structure capable of sufficiently securing a current capacity, and the heat dissipation structure are provided. An object of the present invention is to provide a provided semiconductor device.
The “terminal” in this specification includes a terminal (power terminal) through which a power supply current flows, a lead frame, a connection terminal, and the like.

本発明の要旨は以下の通りである。
上記課題を解決するために、本発明の端子の放熱構造は、電子部品が搭載された導電性基板と、前記導電性基板上に絶縁層を介して配置されるとともに、前記電子部品と電気的に接続され、通電により発熱する端子と、前記絶縁層内に配置され、前記端子の前記導電性基板側の面と接するように設けられた放熱用金属部材と、を備え、前記導電性基板と放熱用金属部材とは、前記絶縁層により電気的に絶縁されていることを特徴とする。 The gist of the present invention is as follows.
In order to solve the above-described problems, a terminal heat dissipation structure according to the present invention includes a conductive substrate on which an electronic component is mounted, an insulating layer disposed on the conductive substrate, and an electrical connection with the electronic component. And a terminal that generates heat when energized, and a heat dissipating metal member that is disposed in the insulating layer and is in contact with the surface of the terminal on the side of the conductive substrate. The metal member for heat dissipation is electrically insulated by the insulating layer.

本発明によれば、端子において発生した熱に対する放熱効果を向上させることにより、電流容量を十分に確保することが可能な端子の放熱構造、及び当該放熱構造を備えた半導体装置を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the heat dissipation effect with respect to the heat which generate | occur | produced in the terminal is improved, and the semiconductor device provided with the heat dissipation structure of the terminal which can ensure sufficient current capacity, and the said heat dissipation structure is provided. it can.

図１は、本発明の一実施形態である端子の放熱構造を示す側断面模式図である。FIG. 1 is a schematic side sectional view showing a terminal heat dissipation structure according to an embodiment of the present invention. 図２Ａは、本発明の一実施形態である端子の放熱構造を複数備えた半導体装置を示す上面模式図である。FIG. 2A is a schematic top view showing a semiconductor device including a plurality of terminal heat dissipation structures according to an embodiment of the present invention. 図２Ｂは、本発明の一実施形態である端子の放熱構造を複数備えた半導体装置を示す側断面模式図である。FIG. 2B is a schematic side sectional view showing a semiconductor device including a plurality of terminal heat dissipation structures according to an embodiment of the present invention.

以下、本発明の端子の放熱構造及びそれを備えた半導体装置について、図面を参照しながら詳細に説明する。
なお、以下の説明で用いる図面は、特徴を分かりやすくするために、便宜上特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率などが実際と同じであるとは限らない。また、以下の説明において例示される材料、寸法等は一例であって、本発明はそれらに必ずしも限定されるものではなく、その要旨を変更しない範囲で適宜変更して実施することが可能である。 DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a terminal heat dissipation structure and a semiconductor device including the same according to the present invention will be described in detail with reference to the drawings.
In addition, in the drawings used in the following description, in order to make the characteristics easy to understand, there are cases where the characteristic portions are enlarged for convenience, and the dimensional ratios of the respective components are not always the same as the actual ones. Absent. In addition, the materials, dimensions, and the like exemplified in the following description are merely examples, and the present invention is not necessarily limited thereto, and can be appropriately modified and implemented without departing from the scope of the invention. .

本発明の一実施形態である端子の放熱構造１００について説明する。
図１に示すように、本実施形態の端子の放熱構造１００は、電子部品（不図示）が搭載された導電性基板（ベース金属）１１と、導電性基板１１上に絶縁層１２を介して配置されるとともに、前記電子部品と電気的に接続され、通電により発熱する端子１３と、絶縁層１２内に配置され、端子１３の導電性基板１１側の面１３ａと接するように設けられた放熱用金属部材１４と、を備え、導電性基板１１と放熱用金属部材１４とは、絶縁層１２により電気的に絶縁されていることを特徴とする。
なお、本実施形態においては、端子の一例として、電源電流が流れるような端子（電力端子）を例に挙げ説明するが、本発明の端子はこれに限らず、例えば、外部配線との接続端子、発熱部品との接続端子等にも適用できる。 A terminal heat dissipation structure 100 according to an embodiment of the present invention will be described.
As shown in FIG. 1, the terminal heat dissipation structure 100 of this embodiment includes a conductive substrate (base metal) 11 on which electronic components (not shown) are mounted, and an insulating layer 12 on the conductive substrate 11. And a terminal 13 that is electrically connected to the electronic component and generates heat when energized, and a heat dissipating element disposed in the insulating layer 12 and in contact with the surface 13a of the terminal 13 on the conductive substrate 11 side. The conductive substrate 11 and the heat radiating metal member 14 are electrically insulated by the insulating layer 12.
In the present embodiment, as an example of the terminal, a terminal (power terminal) through which a power supply current flows is described as an example. However, the terminal of the present invention is not limited to this, for example, a connection terminal with external wiring It can also be applied to connection terminals with heat-generating components.

導電性基板１１上には、絶縁層１２が設けられた領域とはほかの領域に設けられた絶縁層３１を介して配線パターン３０が形成されており、この配線パターン３０に電子部品（不図示）が電気接続されることで回路が形成されている。本実施形態では、導電性基板１１の上面１１ａ側に配線パターン３０が形成されている。また、本実施形態では、配線パターン３０と端子１３とがワイヤボンド３２により接続されている。   A wiring pattern 30 is formed on the conductive substrate 11 via an insulating layer 31 provided in a region other than the region where the insulating layer 12 is provided, and an electronic component (not shown) is formed on the wiring pattern 30. ) Are electrically connected to form a circuit. In the present embodiment, the wiring pattern 30 is formed on the upper surface 11 a side of the conductive substrate 11. In the present embodiment, the wiring pattern 30 and the terminal 13 are connected by a wire bond 32.

端子１３は、導電性基板１１上に絶縁層１２を介して配置されるとともに、ワイヤボンド３２及び配線パターン３０を介して前記電子部品と電気的に接続される。   The terminal 13 is disposed on the conductive substrate 11 via the insulating layer 12 and is electrically connected to the electronic component via the wire bond 32 and the wiring pattern 30.

導電性基板１１と端子１３との間に配置された絶縁層１２内には、端子１３の導電性基板１１側の面１３ａと接するように放熱用金属部材１４が設けられている。なお図１においては、放熱用金属部材１４は、端子１３のうち外部配線部材側１３Ａに設けられているが、これに限らず、端子１３の配線パターン側１３Ｂに設けてもよい。
なお、放熱性金属部材１４の寸法は端子１３の寸法、特に端子１３の導電性基板１１側の面１３ａの表面積に応じて適宜決定してよいが、端子１３において生じた熱を導電性基板１１側へ効率よく放熱させる観点から、端子１３と放熱性金属部材１４の接触面積を十分に確保するよう、放熱性金属部材の１４の寸法を設計することが好ましい。 In the insulating layer 12 disposed between the conductive substrate 11 and the terminal 13, a heat radiating metal member 14 is provided so as to contact the surface 13 a of the terminal 13 on the conductive substrate 11 side. In FIG. 1, the heat dissipating metal member 14 is provided on the external wiring member side 13 </ b> A of the terminal 13, but is not limited thereto, and may be provided on the wiring pattern side 13 </ b> B of the terminal 13.
The size of the heat radiating metal member 14 may be appropriately determined according to the size of the terminal 13, particularly the surface area of the surface 13 a of the terminal 13 on the conductive substrate 11 side. From the viewpoint of efficiently radiating heat to the side, it is preferable to design the dimensions of the heat dissipating metal member 14 so as to ensure a sufficient contact area between the terminal 13 and the heat dissipating metal member 14.

放熱性金属部材１４は断面視略Ｕ字状の形状を有し、放熱用金属部材１４の端子１３側表面１４ａには凹部２０が設けられており、この凹部２０内にナット２１が配されている。そして、端子１３のうちナット２１と対向する位置にボルト２２を貫通させる貫通孔１３ｃが形成されている。
また、本実施形態においては、端子１３上に、例えば、外部電源（不図示）から配線パターン３０へ電流を供給するための外部配線部材１８を配されている。そして、貫通孔１３ｃに挿入されるボルト２２と凹部２０内に配されたナット２１によって、外部配線部材１８と端子１３が固定される。このようにして、導電性基板１１に搭載された配線パターン３０へは、外部電源（不図示）より、外部配線部材１８、端子１３及びワイヤボンド３２を介して電流が流れる。 The heat dissipating metal member 14 has a substantially U shape in cross-section, and a recess 20 is provided on the terminal 13 side surface 14 a of the heat dissipating metal member 14, and a nut 21 is disposed in the recess 20. Yes. And the through-hole 13c which penetrates the volt | bolt 22 in the position facing the nut 21 among the terminals 13 is formed.
In the present embodiment, for example, an external wiring member 18 for supplying a current from an external power source (not shown) to the wiring pattern 30 is disposed on the terminal 13. The external wiring member 18 and the terminal 13 are fixed by the bolt 22 inserted into the through hole 13 c and the nut 21 disposed in the recess 20. In this way, current flows to the wiring pattern 30 mounted on the conductive substrate 11 from the external power source (not shown) through the external wiring member 18, the terminal 13, and the wire bond 32.

本実施形態に係る放熱用金属部材１４は、熱伝導率の高い材料を用いることが好ましく、特に、Ｃｕ、Ａｌ、またはその合金からなることがさらに好ましい。
端子１３では、外部配線部材１８から伝わる熱や、配線パターン３０への電源電流供給時における端子１３とワイヤボンド３２との接続部分での抵抗熱が生じる。そのため、端子１３において生じた熱を導電性基板１１側へ放熱させることが非常に重要である。そのため、放熱金属部材１４は熱伝導率が高い放熱性に優れた材料を用いることが好ましい。 The heat radiating metal member 14 according to the present embodiment is preferably made of a material having high thermal conductivity, and more preferably made of Cu, Al, or an alloy thereof.
In the terminal 13, heat transmitted from the external wiring member 18 and resistance heat at a connection portion between the terminal 13 and the wire bond 32 when the power supply current is supplied to the wiring pattern 30 are generated. Therefore, it is very important to dissipate the heat generated in the terminal 13 to the conductive substrate 11 side. Therefore, it is preferable to use a material with high heat conductivity and excellent heat dissipation for the heat dissipation metal member 14.

また、前述したように、端子１３では、外部配線部材１８からの熱や、抵抗熱が生じるため、このような熱を放熱させることが非常に重要である。このような観点から、放熱用金属部材１４と端子１３とを同じ材料とすることが好ましい。
放熱用金属部材１４と端子１３とを同じ材料とすることで、放熱用金属部材１４と端子１３の界面において電気抵抗の差をなくし、また、端子１３を熱伝導率が高い放熱用金属部材１４と同材料とすることで、さらに効率よく放熱効果を向上させることができる。 Further, as described above, since the terminal 13 generates heat from the external wiring member 18 and resistance heat, it is very important to dissipate such heat. From such a viewpoint, it is preferable that the heat radiating metal member 14 and the terminal 13 are made of the same material.
By using the same material for the heat dissipating metal member 14 and the terminal 13, a difference in electrical resistance is eliminated at the interface between the heat dissipating metal member 14 and the terminal 13, and the heat dissipating metal member 14 having a high thermal conductivity. By using the same material, the heat dissipation effect can be improved more efficiently.

ここで、端子１３において生じた熱を効率良く放熱させるためには、端子１３から放熱金属部材１４への放熱に加え、さらに導電性基板１１側へ熱を逃がすことが好ましい。しかしながら、放熱用金属部材１４と導電性基板１１との間には絶縁層１２が介在しているため、通常、放熱用金属部材１４から導電性基板１１側へ放熱させることは困難である。
一般的に、導電性基板１１と放熱用金属部材１４の間に介在する絶縁層１２の厚み（導電性基板１１と放熱用金属部材１４の間隔）は、要求される絶縁耐圧で決定される。
しかしながら、本実施形態においては、導電性基板１１と放熱用金属部材１４の間に介在する絶縁層１２の厚みを設計する際、前記絶縁耐圧を考慮するのは勿論であるが、放熱用金属部材１４から導電性基板１１側へ放熱させる観点から、絶縁層１２の厚みを極力小さく設定することが好ましい。
すなわち、放熱性金属部材１４から導電性基板１１への放熱性を向上させるためには、導電性基板１１と放熱用金属部材１４の間に介在する絶縁層１２の厚みを、放熱用金属部材１４の熱を導電性基板１１に伝えることが可能な厚みに設定されていることが好ましい。
また、放熱用金属部材１４から導電性基板１１側へ放熱させる観点から、絶縁層１２の材料は、熱伝導率の高い材料を用いることが好ましい。 Here, in order to efficiently dissipate the heat generated in the terminal 13, it is preferable to release the heat to the conductive substrate 11 side in addition to the heat radiation from the terminal 13 to the heat radiating metal member 14. However, since the insulating layer 12 is interposed between the heat dissipating metal member 14 and the conductive substrate 11, it is usually difficult to dissipate heat from the heat dissipating metal member 14 to the conductive substrate 11 side.
Generally, the thickness of the insulating layer 12 (interval between the conductive substrate 11 and the heat radiating metal member 14) interposed between the conductive substrate 11 and the heat radiating metal member 14 is determined by a required withstand voltage.
However, in the present embodiment, when designing the thickness of the insulating layer 12 interposed between the conductive substrate 11 and the heat radiating metal member 14, it is a matter of course that the withstand voltage is taken into consideration. From the viewpoint of radiating heat from 14 to the conductive substrate 11 side, it is preferable to set the thickness of the insulating layer 12 as small as possible.
That is, in order to improve the heat dissipation from the heat-dissipating metal member 14 to the conductive substrate 11, the thickness of the insulating layer 12 interposed between the conductive substrate 11 and the heat-dissipating metal member 14 is changed to the heat-dissipating metal member 14. It is preferable that the thickness is set so that the heat can be transferred to the conductive substrate 11.
In addition, from the viewpoint of radiating heat from the heat radiating metal member 14 to the conductive substrate 11 side, it is preferable to use a material having high thermal conductivity as the material of the insulating layer 12.

なお、本実施形態においては、端子１３とナット２１との間に、放熱材４０が介在していることが好ましい。
前述したように、貫通孔１３ｃに挿入されるボルト２２と凹部２０内に配されたナット２１によって、外部配線部材１８と端子１３が固定されるため、ナット２１と端子１３の導電性基板側の面１３ａとは接触することとなる。そのため、端子１３にて生じた熱を放熱用金属部材１４側へ効率良く逃がすために、ナット２１と端子１３の接触面に放熱材４０を介在させることが好ましい。
放熱材４０としては、例えば放熱シートや放熱グリスを採用できる。 In the present embodiment, it is preferable that the heat dissipating material 40 is interposed between the terminal 13 and the nut 21.
As described above, the external wiring member 18 and the terminal 13 are fixed by the bolts 22 inserted into the through holes 13c and the nuts 21 disposed in the recesses 20, so that the nuts 21 and the terminals 13 on the conductive substrate side are fixed. The surface 13a comes into contact. Therefore, in order to efficiently release the heat generated in the terminal 13 to the heat radiating metal member 14 side, it is preferable to interpose the heat radiating material 40 on the contact surface between the nut 21 and the terminal 13.
As the heat dissipation material 40, for example, a heat dissipation sheet or heat dissipation grease can be employed.

また、ボルト２２とナット２１により外部配線部材１８と端子１３を固定する際、端子１３とナット２１との間に座金（ワッシャー）を介して固定してもよい。
このような場合、端子１３において生じた熱の放熱経路は、ワッシャー、ナット、放熱用金属部材１４の順となる。そのため、放熱性の観点から、ワッシャーの材料としては、熱伝導率がナットの熱伝導率と同等な材料を用いることが好ましい。 Further, when the external wiring member 18 and the terminal 13 are fixed by the bolt 22 and the nut 21, the terminal 13 and the nut 21 may be fixed via a washer (washer).
In such a case, the heat radiation path of the heat generated in the terminal 13 is in the order of the washer, the nut, and the heat radiating metal member 14. Therefore, from the viewpoint of heat dissipation, it is preferable to use a material having a thermal conductivity equivalent to that of the nut as the washer material.

また、本実施形態に係る半導体装置においては、上述してきたような端子の放熱構造を少なくとも１つ備えてもよい。
図２Ａに、本実施形態である端子の放熱構造を複数備えた半導体装置を示す上面模式図を、そして図２Ｂにその側断面模式図を示す。なお、図１に示した部材と同一の部材については同一の符号を付して示している。
図２Ａに示すように、本実施形態に係る半導体装置は、配線パターンの配列方向と平行に複数の放熱構造を配置してもよい。なお、この場合は、隣合う放熱構造（例えば、図２Ａ中の放熱構造１００と放熱構造１０１）は、絶縁耐圧を保持する間隔を維持するように配置する。
なお、絶縁層５０は、配線パターン３０，１３０や端子１３，１１３の一部を封止する役割を担っており、図２Ａ，Ｂ中では絶縁層１２や絶縁層３１とは別部材として示しているが、本実施形態では当該構成に限らず、絶縁層５０が、絶縁層１２または絶縁層３１の少なくとも一方と連結されて同一部材とされていてもよい。
また、図２Ｂに示すように配線パターン３０，１３０や端子１３，１１３の一部を封止するに絶縁層５０を設けた場合（絶縁層５０が、絶縁層１２または絶縁層３１の少なくとも一方と連結されている場合も含む）、従来の構造では端子等で生じた熱の放熱効率が低くなるという問題があった。しかしながら、本実施形態に係る放熱構造１００、１０１では、端子１３の導電性基板１１側の面１３ａと接するように放熱用金属部材１４を設けているため、絶縁層５０を設けた場合においても端子１３において生じた熱を導電性基板１１側へ効率よく逃がすことができる。 Further, the semiconductor device according to the present embodiment may include at least one terminal heat dissipation structure as described above.
FIG. 2A is a schematic top view showing a semiconductor device having a plurality of terminal heat dissipation structures according to this embodiment, and FIG. 2B is a schematic side sectional view thereof. In addition, the same code | symbol is attached | subjected and shown about the member same as the member shown in FIG.
As shown in FIG. 2A, in the semiconductor device according to the present embodiment, a plurality of heat dissipation structures may be arranged in parallel with the arrangement direction of the wiring patterns. In this case, the adjacent heat dissipation structures (for example, the heat dissipation structure 100 and the heat dissipation structure 101 in FIG. 2A) are arranged so as to maintain an interval for maintaining the withstand voltage.
The insulating layer 50 serves to seal part of the wiring patterns 30 and 130 and the terminals 13 and 113, and is shown as a separate member from the insulating layer 12 and the insulating layer 31 in FIGS. However, the present embodiment is not limited to this configuration, and the insulating layer 50 may be connected to at least one of the insulating layer 12 or the insulating layer 31 to be the same member.
2B, when the insulating layer 50 is provided to seal part of the wiring patterns 30 and 130 and the terminals 13 and 113 (the insulating layer 50 is formed of at least one of the insulating layer 12 and the insulating layer 31). In the conventional structure, there is a problem that the heat radiation efficiency of the heat generated at the terminal is lowered. However, in the heat dissipation structures 100 and 101 according to the present embodiment, since the heat dissipation metal member 14 is provided so as to be in contact with the surface 13a of the terminal 13 on the conductive substrate 11 side, the terminal is provided even when the insulating layer 50 is provided. The heat generated in 13 can be efficiently released to the conductive substrate 11 side.

以上説明したような上記端子の放熱構造１００によれば、端子１３の導電性基板１１側の面と接するように、放熱用金属部材１４が設けられているため、端子１３が通電により発熱しても、この熱を放熱用金属部材１４に効率よく逃がすことができる。また、電子部品や外部（配線等）の熱が端子１３に伝わった場合でも、同様に、端子１３にて生じた熱を放熱用金属部材１４に効率よく逃がすことが可能となる。そして、このように端子１３にて生じた熱を放熱させることが可能となるため、端子１３の温度上昇を抑制することができ、電流容量を十分に確保できる。   According to the terminal heat dissipation structure 100 as described above, since the heat dissipation metal member 14 is provided so as to be in contact with the surface of the terminal 13 on the conductive substrate 11 side, the terminal 13 generates heat when energized. However, this heat can be efficiently released to the heat radiating metal member 14. Further, even when heat from an electronic component or the outside (wiring, etc.) is transmitted to the terminal 13, similarly, the heat generated at the terminal 13 can be efficiently released to the heat radiating metal member 14. And since it becomes possible to radiate | emit the heat which generate | occur | produced in the terminal 13 in this way, the temperature rise of the terminal 13 can be suppressed and current capacity can fully be ensured.

また、上記端子の放熱構造１００を備えた半導体装置によれば、端子１３が通電により発熱しても、この熱を放熱用金属部材１４に効率よく逃がすことができるため、電流容量を十分に確保できる。その結果、このような半導体装置において素子特性の劣化を抑制することが可能となる。   Further, according to the semiconductor device provided with the terminal heat dissipation structure 100, even if the terminal 13 generates heat by energization, the heat can be efficiently released to the heat dissipation metal member 14, so that a sufficient current capacity is secured. it can. As a result, it is possible to suppress deterioration of element characteristics in such a semiconductor device.

以上、本発明の詳細について説明したが、本発明は上述した実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることができる。   Although the details of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.

放熱用金属部材１４と端子１３との固定手段として、上記ではボルトとナットで固定する形態について説明したが、本発明はこれに限らず、例えば、端子１３と放熱用金属部材１４が同一材料からなる場合、端子１３として、予め放熱用金属部材１４と一体となった部品を端子１３として用いることにより、放熱効率の向上効果を享受できるほか、放熱構造を構成する部品点数を削減することが可能となる。   As a fixing means for the heat radiating metal member 14 and the terminal 13, the embodiment in which the bolt and the nut are used for fixing is described above. However, the present invention is not limited to this. In this case, by using as the terminal 13 a part integrated with the heat radiating metal member 14 in advance as the terminal 13, the effect of improving the heat dissipation efficiency can be enjoyed, and the number of parts constituting the heat dissipation structure can be reduced. It becomes.

１１・・・導電性基板
１１ａ・・・上面
１２・・・絶縁層
１３、１１３・・・端子
１３ａ・・・導電性基板側表面
１３ｃ・・・貫通孔
１４、１１４・・・放熱用金属部材
１８、１１８・・・外部接続部材
２０・・・凹部
２１・・・ナット
２２、１２２・・・ボルト
３０、１３０・・・配線パターン
３１・・・絶縁層
３２、１３２・・・ワイヤボンド
４０・・・放熱材
５０・・・絶縁層
１００、１０１・・・放熱構造 DESCRIPTION OF SYMBOLS 11 ... Conductive substrate 11a ... Upper surface 12 ... Insulating layer 13, 113 ... Terminal 13a ... Conductive substrate side surface 13c ... Through-hole 14, 114 ... Metal member for heat dissipation 18, 118 ... External connection member 20 ... Recess 21 ... Nut 22, 122 ... Bolt 30, 130 ... Wiring pattern 31 ... Insulating layer 32, 132 ... Wire bond 40 ..Heat dissipation material 50 ... Insulating layer 100, 101 ... Heat dissipation structure

Claims (7)

電子部品が搭載された導電性基板と、
前記導電性基板上に絶縁層を介して配置されるとともに、前記電子部品と電気的に接続され、通電により発熱する端子と、
前記絶縁層内に配置され、前記端子の前記導電性基板側の面と接するように設けられた放熱用金属部材と、を備え、
前記導電性基板と放熱用金属部材とは、前記絶縁層により電気的に絶縁されていることを特徴とする端子の放熱構造。 A conductive substrate on which electronic components are mounted;
A terminal disposed on the conductive substrate via an insulating layer, electrically connected to the electronic component and generating heat when energized;
A heat dissipating metal member disposed in the insulating layer and provided so as to be in contact with the surface of the terminal on the conductive substrate side,
The terminal heat dissipation structure, wherein the conductive substrate and the heat dissipation metal member are electrically insulated by the insulating layer. 前記導電性基板と前記放熱用金属部材の間に介在する前記絶縁層の厚みが、前記放熱用金属部材の熱を前記導電性基板に伝えることが可能な厚みに設定されていることを特徴とする請求項１に記載の端子の放熱構造。   The thickness of the insulating layer interposed between the conductive substrate and the metal member for heat dissipation is set to a thickness capable of transferring heat of the metal member for heat dissipation to the conductive substrate. The terminal heat dissipation structure according to claim 1. 前記放熱用金属部材の前記端子側表面には凹部が設けられ、
当該凹部内にはナットが配され、
前記端子のうち当該ナットと対向する位置にボルトを貫通させる貫通孔が形成されていることを特徴とする請求項１又は２に記載の端子の放熱構造。 A recess is provided on the terminal side surface of the metal member for heat dissipation,
A nut is arranged in the recess,
The terminal heat dissipation structure according to claim 1, wherein a through hole through which the bolt passes is formed at a position facing the nut among the terminals. 前記ナットと前記端子との間に、放熱材が介在していることを特徴とする請求項３に記載の端子の放熱構造。   The heat dissipation structure for a terminal according to claim 3, wherein a heat dissipation material is interposed between the nut and the terminal. 前記端子上に外部配線部材を配し、前記ボルト及び前記ナットによって、前記外部配線部材と前記端子と前記放熱用金属部材とを固定することを特徴とする請求項３又は４の何れか一項に記載の端子の放熱構造。   5. The external wiring member is disposed on the terminal, and the external wiring member, the terminal, and the heat radiating metal member are fixed by the bolt and the nut. The terminal heat dissipation structure described in 1. 前記放熱用金属部材と前記端子とが同じ材料からなることを特徴とする請求項１〜５の何れか一項に記載の端子の放熱構造。   The terminal heat dissipation structure according to any one of claims 1 to 5, wherein the metal member for heat dissipation and the terminal are made of the same material. 請求項１〜６の何れか一項に記載の端子の放熱構造を少なくとも１つ備えることを特徴とする半導体装置。   A semiconductor device comprising at least one of the terminal heat dissipation structures according to claim 1.
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