JP2014156632A - Plasma cvd apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a compact plasma CVD apparatus which can recover dust accumulating near exhaust means as well as prevent dust from intruding into the inside of the exhaust means.SOLUTION: A plasma CVD apparatus 1 includes: a vacuum chamber 2; a pair of film deposition rolls 5 which is disposed in the vacuum chamber 2 and has an AC power supply connected thereto; magnetic field generating means 6 which forms a plasma region P on a surface of the pair of film deposition rolls 5; exhaust means 8 which is disposed on one of the side walls of the vacuum chamber 2, and exhausts gas in the vacuum chamber 2 to outside. The plasma CVD apparatus 1 forms a film on the surface of a substrate W. Shield means 12 preventing film formation to the exhaust means 8 is provided between the exhaust means 8 and the plasma region P in the vacuum chamber 2.

Description

  The present invention relates to a plasma CVD apparatus for continuously forming a functional film on the surface of a sheet-like substrate such as a plastic film.

In recent years, for thin film used for food packaging etc. (for example, insulating materials such as plastic film) and thin film glass (glass film) used for substrate materials for display devices that display images, There is a high demand for oxygen-impermeable properties (barrier properties). In order to give a high barrier property to a sheet-like substrate (sheet material) such as a plastic film, it is necessary to coat the surface of the substrate with a transparent film such as SiO _x or Al ₂ O _3. There is.

Conventionally, as a coating technique of the SiOx film, there are physical vapor deposition methods (PVD methods) such as vacuum vapor deposition, sputtering, and ion plating methods. A chemical vapor deposition method (plasma CVD method) which is superior in terms of film formation has been used.
Documents disclosing the structure of a plasma CVD apparatus used in the above-described plasma CVD method include those disclosed in Patent Document 1 and Patent Document 2.

  Patent Document 1 discloses a plasma CVD film forming apparatus that continuously forms a long substrate while continuously forming a film on the substrate, and the first film forming roll and the first film forming roll. A film forming roll that includes a second film forming roll disposed oppositely in parallel and that winds and conveys the substrate; and is positioned between the first film forming roll and the second film forming roll; A line segment connecting the rotation axis of the film forming roll and the rotation axis of the second film forming roll with the shortest distance is divided into two equal parts, and a first symmetry plane orthogonal to the line segment, and the first film forming roll and A second symmetry plane that bisects the entire length of the second film forming roll and is orthogonal to the first symmetry plane is set, and is mirror-symmetric with respect to the first symmetry plane and the second symmetry plane. With respect to a cross line defined by intersecting the first symmetry plane and the second symmetry plane. A vacuum chamber having one or two or more vacuum exhaust ports arranged so as to be axially symmetric and storing the film forming roll, the first film forming roll, and the second film forming roll A plasma CVD apparatus including a film forming gas supply unit for supplying a film forming gas in between and a vacuum pump connected to the vacuum exhaust port and provided outside the vacuum chamber is disclosed.

  Further, Patent Document 2 includes a vacuum chamber and a film forming roll disposed in the vacuum chamber, and a CVD process for forming a film on the surface of a sheet-like substrate wound around the film forming roll. In the film apparatus, the vacuum chamber includes a plurality of film forming chamber units each provided with the film forming rolls, and a plurality of connection chamber units connecting the film forming chamber units. Discloses a plasma CVD apparatus in which the film forming rolls are arranged in a horizontal direction.

JP2011-137225A JP 2011-89165 A

As the work of forming a film on the surface of a sheet-like base material using a conventional plasma CVD apparatus as disclosed in Patent Document 1 and Patent Document 2, various processes as described below are performed. It is clear that problems will occur.
(Problem 1)
First, when film formation by a conventional plasma CVD apparatus is advanced, a thick film is also formed at both ends of a film forming roll provided in the vacuum chamber. The thick film formed on both ends of the film forming roll has a stress in the inside thereof, and peels off so as to be repelled as the film is deposited on both ends of the film forming roll. The peeled film becomes dust and falls below the film forming roll or reaches the opening of the vacuum pump (exhaust means) so that it is deposited in the vacuum chamber and around the opening of the exhaust means. Become.

  For example, in the plasma CVD apparatus of Patent Document 1, as shown in FIG. 1-2 of the same document, an opening of an exhaust unit is provided almost directly below the film forming roll, and the film is peeled off from the surface of the film forming roll. The dust (thick film) proceeds almost linearly in vacuum and directly enters the opening (vacuum exhaust port) of the exhaust means, which may cause damage or contamination of the exhaust means. Further, in the plasma CVD apparatus of Patent Document 2, as shown in FIG. 2 of the same document, an opening of the exhaust means is provided below the film forming roll so as to face the horizontal direction. There is a possibility that the dust that has entered the air enters the opening while the exhaust means is in operation, resulting in damage or contamination of the vacuum pump.

In particular, a turbo molecular pump (vacuum pump) in which the turbine (blade) rotates at high speed is used as the exhaust means of the plasma CVD apparatus, and the turbine is damaged if the scattered thick film hits the turbine rotating at high speed. In addition, the turbo molecular pump may be damaged or contaminated.
(Problem 2)
Further, when film formation by a conventional plasma CVD apparatus is advanced, there is a problem that a film is formed directly in the vicinity of the exhaust means and the opening of the exhaust means.

The plasma CVD apparatus is characterized in that powerful plasma and ions are formed in the vicinity of the film forming roll surface (plasma region), but ions and radicals (residual gas) that did not contribute to film formation on the surface of the substrate. ) May reach the vicinity of the exhaust means without losing energy from the film formation area (area where the film is formed on the surface of the base material) while repeatedly colliding with the obstacle. In that case, energy is imparted to the raw material gas and the decomposition product of the raw material gas between the film forming roll and the exhaust means. When the residual gas reaches the exhaust unit and the vicinity of the exhaust unit, a film is formed around the exhaust unit, for example, a vacuum pump turbine, or a film is formed in the opening of the exhaust unit or the exhaust path. There is a risk of forming a film that does not.
(Problem 3)
In the conventional plasma CVD apparatus, in order to control the film forming speed and the film quality of the film, it is very important to control the amount of gas to be supplied and the pressure in the vacuum chamber. Therefore, the plasma CVD apparatus is often provided with an exhaust speed adjusting means for adjusting the exhaust speed in order to adjust the pressure in the vacuum chamber based on a predetermined supply gas flow rate. However, as described in Problem 2, when a problem occurs that a film is formed around the exhaust means, a film is also formed on the exhaust speed adjusting means. In that case, the movement and performance of the exhaust speed adjusting means may be reduced, and the pressure in the vacuum chamber may not be controlled.
(Problem 4)
When film formation by a conventional plasma CVD apparatus proceeds, there is a problem that dust is transferred to the film-formed substrate.

As described in Problem 1, the film formed on both ends of the film forming roll peels off from the film forming roll and becomes dust. The dust rises in the vacuum chamber by a process such as introduction of air. The dust that has risen in the vacuum chamber adheres to the surface of the transport roll provided in the vacuum chamber. Dust adhering to the surface of the transport roll or the like may be transferred to the surface of the transported base material or cause contamination or film defects.
(Problem 5)
When a film is formed on the surface of the base material by operating the plasma CVD apparatus for a long time, there is a problem that the film is gradually formed on the inner wall surface of the vacuum chamber. Therefore, measures have been taken to provide a space (maintenance space) for removing the film in the vacuum chamber.

However, in the conventional plasma CVD apparatus, it is difficult to secure a sufficiently large maintenance space because the exhaust means occupies a large space and the scale of the vacuum chamber is small. Even if a space for maintenance can be secured, a maintenance opening is often formed at a location far from the film forming roll, so that a coating formed at an undesired location or collected dust can be recovered. Have difficulty. For example, in Patent Document 2, the evacuation unit is disposed below the film formation area so as to face each other in parallel with the rotation axis of the film formation roll, and a maintenance opening (door member) is provided. There is no space to install. It is conceivable that a maintenance door member is provided on a surface perpendicular to the rotation axis. However, when the width of the sheet-like base material is wide, it becomes difficult to reach the lower part of the center part of the base material, and maintenance becomes difficult. .

  Therefore, in view of the above problems, the present invention can prevent dust from entering the inside of the exhaust means and prevent dust from accumulating in the vicinity of the exhaust means. An object of the present invention is to provide a plasma CVD apparatus that can easily take out dust to the outside even if dust accumulates.

In order to achieve the above-described object, the present invention takes the following technical means.
The plasma CVD apparatus according to the present invention includes a vacuum chamber, a pair of film forming rolls disposed in the vacuum chamber and connected to an AC power source, and a magnetic field generation for forming a plasma region on the surfaces of the pair of film forming rolls In the plasma CVD apparatus, wherein the vacuum chamber is provided with a means and an exhaust means disposed on one side wall of the vacuum chamber and exhausting the gas in the vacuum chamber to the outside. A shielding means for preventing film formation on the exhaust means is provided between the exhaust means and the plasma region.

Preferably, the vacuum chamber includes a main chamber provided with the pair of film forming rolls, and a sub chamber provided below the main chamber having an exhaust unit on one of the side walls.
Preferably, the shielding means is disposed in front of an inflow opening provided in the exhaust means.

Preferably, the inflow opening of the exhaust means has an opening downward.
Preferably, the vacuum chamber is provided with a door portion on the other side wall so as to face exhaust means provided on one side wall, and the vacuum chamber and the external space are opened by opening the door portion. Should be able to communicate.
Preferably, an exhaust path is formed between the inflow opening of the exhaust means and the shielding means, and an exhaust speed adjustment for adjusting an inflow speed of the gas flowing into the exhaust means is provided in the exhaust path. Means may be provided.

Preferably, the exhaust speed adjusting means adjusts the flow area of the exhaust path and controls the flow rate of the gas passing through the exhaust path.
Preferably, the pair of film forming rolls are connected and disposed in the vacuum chamber so as to be adjacent to each other.
Preferably, a plurality of subchambers are provided for each of the pair of film forming rolls, a door part provided in one subchamber, and a door part provided in another subchamber adjacent to the one subchamber, Are preferably arranged so as to face each other.
Preferably, the base material is disposed only in the main chamber, and a door capable of separating the main chamber and the sub-chamber is provided.

  According to the plasma CVD apparatus of the present invention, it is possible to prevent dust from entering the inside of the exhaust means and to prevent dust from accumulating in the vicinity of the exhaust means. Even if it accumulates, dust can be easily taken out.

It is the figure which showed 1st Embodiment of the plasma CVD apparatus of this invention. It is the figure which showed the modification of 1st Embodiment of the plasma CVD apparatus of this invention. It is the figure which showed the modification of 1st Embodiment of the plasma CVD apparatus of this invention. It is the figure which showed 2nd Embodiment of the plasma CVD apparatus of this invention. It is the figure which showed 3rd Embodiment of the plasma CVD apparatus of this invention. It is the figure which showed 4th Embodiment of the plasma CVD apparatus of this invention.

Hereinafter, the plasma CVD apparatus 1 according to the present embodiment will be described with reference to the drawings.
In addition, in each embodiment and drawing demonstrated below, suppose that the same code | symbol and the same name are attached | subjected to the same structural member in the plasma CVD apparatus 1. FIG. Therefore, the same description will not be repeated for the components having the same reference numerals and the same names.
In FIG. 1, the horizontal direction of the paper is the horizontal direction of the plasma CVD apparatus 1. Further, the left direction on the paper surface is the upstream side of the plasma CVD apparatus 1, and the right direction on the paper surface is the downstream side of the plasma CVD apparatus 1. Further, the vertical direction of the paper surface is the vertical direction of the plasma CVD apparatus 1 of the present invention, and the through direction of the paper surface is the width direction (left-right direction) of the plasma CVD apparatus 1 of the present invention.
[First Embodiment]
The plasma CVD apparatus 1 of the present invention generates plasma by applying a pulse voltage with alternating current or polarity reversal to the film forming rolls 5 arranged side by side under reduced pressure. The plasma may be generated in the region where the substrate W is wound, but the plasma is mainly generated in the space opposed to the film forming roll 5 and is applied to the sheet-like substrate W wound around the film forming roll 5. Film formation is performed by plasma CVD.

  A plasma CVD apparatus 1 includes a main chamber 3 for forming a film on the surface of a substrate W, and a vacuum chamber 2 configured to communicate with the main chamber 3 and to protrude in the vertical direction thereof. A pair of film forming rolls 5 disposed in the main chamber 3 and connected to an electrode of an AC power source, a magnetic field generating means 6 for forming a plasma region P on the surface of the pair of film forming rolls 5, and a sub Exhaust means 8 (hereinafter referred to as a vacuum pump) is provided on one side wall of the chamber 4 and exhausts the gas in the vacuum chamber 2 to the outside. In the present embodiment, the sub chamber 4 is provided so as to protrude in the vertical direction of the main chamber 3.

In addition, gas supply means (not shown) for supplying a film forming gas (including a raw material gas) is provided around the film forming area A formed in the vacuum chamber 2.
The plasma CVD apparatus 1 allows a sheet-like substrate W wound around a pair of film forming rolls 5 disposed in the main chamber 3 to pass through the plasma region P formed by the magnetic field generating means 6. A film is formed on the surface of the substrate W.

Prior to describing the plasma CVD apparatus 1 of the present invention, the substrate W to be deposited will be described.
As shown in the background art, the base material W is composed of a thin film film used for food packaging and the like, for example, a thin sheet having a thickness of about 5 μm to 0.5 mm that can be transported in a vacuum. It is formed into a shape. More preferably, the substrate W may be formed into a very thin sheet having a thickness of about 50 to 200 μm. In this case, if the substrate W is thick, wrinkles are less likely to occur, and it becomes easier to form a film on the surface of the substrate W. However, the denseness of the film may drop, and the balance between wrinkle generation and film performance may be reduced. It is good to determine the thickness of the base material W. It is desirable to suppress the generation of wrinkles by processing the back surface of the base material to improve slipperiness.

  Examples of the substrate W to be formed include a plastic film, a resin sheet, paper, and a glass film. Examples of plastic films and resin sheets include PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethersulfone), CCP (chain-cured polymer), COP (cyclic polyolefin), polycarbonate, Examples include olefin and polyimide. A pretreatment or an undercoat may be formed on the surface of the substrate W by dry treatment or wet treatment for smoothing or improving adhesion. The amount of moisture and residual raw material contained in the substrate W before performing the film forming process may be adjusted or removed, and these pretreatments may be performed in the same vacuum chamber. Since the substrate W has flexibility due to its thinness, it can be wound up in a roll shape. Moreover, the base material W is also an insulating material.

As described above, since the base material W is an insulating material, no current can flow when a DC voltage is applied, but an appropriate frequency (approximately 1 kHz to 100 MHz, preferably 10 kHz).
(kHz to 100 MHz), it is possible to propagate the current through the substrate W. The discharge voltage supplied from the AC power supply is preferably in the range of several hundred V to 2,000 V.
As shown in FIG. 1, the base material W described above is accommodated in a vacuum chamber 2 constituting a plasma CVD apparatus 1. The base material W can be sent into the vacuum chamber from the atmosphere without being accommodated in the vacuum chamber, but in this case, the base material W is thin so that the air does not flow into the vacuum chamber from the vicinity of the passage of the base material W. It is sent into the vacuum chamber from the atmosphere through the gap.

  The vacuum chamber 2 is a chamber whose inside can be decompressed to a vacuum state. The vacuum chamber 2 is a hollow casing formed of a metal plate such as stainless steel, and holds the inside airtight. The vacuum chamber 2 includes a main chamber 3 for forming a film on the surface of the substrate W, and a sub chamber 4 provided so as to communicate with the main chamber 3 and protrude downward. Yes.

The main chamber 3 is a casing having an opening at the bottom, and includes a film forming apparatus 7 that applies a transparent film such as SiO _x or TiO _x to the base material W. The film forming apparatus 7 includes a pair of film forming rolls 5 formed in a cylindrical shape or a columnar shape and a magnetic field generating means 6 for generating plasma, and the pair of film forming rolls 5 conveys the substrate W. Is going. That is, the main chamber 3 performs surface treatment such as CVD on the substrate W being conveyed by the film forming roll 5.

  The sub-chamber 4 is a housing having a U-shaped cross section with an upper opening, and a vacuum pump 8 is provided on one side wall of the sub-chamber 4. The vacuum pump 8 can reduce the pressure inside the vacuum chamber 2 to a vacuum state or a low pressure state. The vacuum pump 8 is a turbo molecular pump having a turbine (blade) that rotates at a high speed, and a dry quote pump or the like is installed downstream.

  The film forming roll 5 is a cylinder formed of a stainless material or the like, and is a roller that is rotatably disposed in the main chamber 3. Usually, the two film forming rolls 5 have the same diameter and the same length, but may have different diameters and lengths. A pair of film forming rolls 5 are provided so as to face each other with a predetermined interval, their rotation centers are arranged at substantially the same height, and the axes of the film forming rolls 5 are parallel and horizontal. Have been deployed. The substrate W to be deposited is wound around the deposition roll 5, and the substrate W is conveyed along with the rotation of the deposition roll 5. Each film forming roll 5 is provided with a rotational torque load mechanism such as a vacuum seal part, a power feeding part, and a heating medium introducing part such as temperature adjusting water, which is not shown, and the rotational torque load mechanism is a film forming roll. 5 is driven at an arbitrary rotational speed.

  The surface of the film forming roll 5 is hardened with a super hard material or a chromium-based material so that it does not wrinkle due to maintenance or the like. The pair of film forming rolls 5 are electrically insulated from the vacuum chamber 2 and are electrically insulated from each other, and are connected to electrodes (both electrodes) of an AC power supply. The AC power supply can generate a high-frequency AC voltage or a pulsed voltage that can reverse the polarity of both poles.

Forming area partitioning means 9 for isolating the inside of the main chamber 3 into two areas is provided so as to surround the peripheral area of the pair of film forming rolls 5.
The film formation area partitioning means 9 is a partition wall made of a metal plate material such as stainless steel or an insulator of resin or ceramic, and more specifically, a side wall standing vertically from the bottom of the main chamber 3 And an upper wall that closes the upper side of the pair of film forming rolls 5 and fixes the side walls so as to cross each other. In other words, the inside of the main chamber 3 is set as the film forming area A and the outside thereof as the pressurizing area B by the film forming area partitioning means 9.

The film formation area A is an area where a film is formed on the surface of the substrate W while the film formation gas is filled. On the other hand, the pressurized area B is an area filled with a pressurized discharge gas having a higher pressure than that in the film forming area A. Examples of the pressurized discharge gas include gases such as oxygen, nitrogen, and Ar. In the film formation area A, a gas supply means for supplying a film formation gas to the film formation area A is provided. The gas supply means may be a cylindrical tube, a rectangular tube, or a gas shower in which a plurality of holes are formed in a tubular part such as a part having a space inside a lid formed on a groove-shaped part formed by machining. The arrangement of the hole interval and the like, the diameter and depth of the holes, and the like should be adjusted as appropriate in order to determine the film thickness distribution of the film formation. Instead of a hole shape, a slit shape may be used. The gas supply means may be provided with a temperature adjusting means for preventing condensation of the source gas. The temperature adjusting means may be performed by flowing a heating medium such as water, or a heater such as an electric heater may be used. It is more preferable that the surface of the raw material supply means is replaceable so that unnecessary films attached to the surface of the gas supply means can be removed and maintenance can be facilitated. The raw material supply means may be detachable from above the vacuum chamber to improve maintainability.

  The gas supply means supplies a film-forming gas that contributes to the formation of a film on the surface of the substrate W after the pressure in the film-forming area A is reduced (the raw material gas is essential and the reaction gas and auxiliary gas are included). To do. Further, the gas supply means are often arranged in the horizontal direction above the film forming roll 5, but the relative position with respect to the film forming roll 5 can be freely adjusted so that the film forming gas (raw material gas) is formed. It is preferable that the time for reaching the film roll 5 can be changed.

Here, the film forming gas (raw material gas) supplied into the film forming area A will be described.
The source gas is a gas that supplies a material that is a main component of the film. For example, when forming a SiO _x film on the surface of the substrate W, HMDSO (hexamethyldisiloxane), TEOS (tetraethoxysilane) A gas containing Si such as silane. Those containing oxygen in the molecule are suitable for forming SiOx, and those containing nitrogen in the molecule and those not containing oxygen in the molecule are suitable for forming a SiN-based film. Alternatively, a gas containing Ti such as titanium isopropoxide or TDMAT (tetrakisdimethylaminotitanium) or a gas containing Al such as TMA (trimethylaluminum) may be used. A metal organic compound, a metal chloride, a metal fluoride, or the like that can be vaporized by heating may be used. The raw material flow rate is adjusted in the liquid phase or gas phase state and supplied to the vacuum chamber 2.
Further, when a carbon-based film is formed on the surface of the substrate W, a hydrocarbon gas such as methane, butane, propane, ethylene, acetylene, toluene, or benzene may be used.

Next, the reactive gas is a gas that itself does not contribute to forming a film on the surface of the substrate W, but reacts with the raw material gas and is taken into the film to be formed. is there. For example, in the case of SiO _x film formation, oxygen (O ₂ ) and N ₂ O correspond to this. In the case of forming a SiN film, nitrogen (N ₂ ), ammonia (NH ₃ ), and the like correspond to this. Further, hydrogen (H ₂ ) may be used for the purpose of containing hydrogen in the film.

The auxiliary gas is a gas that is not contained in the film in principle, but is a gas supplied for the purpose of improving the stability of discharge and improving the film quality of the film. For example, in the case of SiO _x film formation, argon (A _r ), helium (H _e ), and the like correspond thereto.
In general, the gas supply means is disposed above the pair of film forming rolls 5, and the axis of the shaft provided in the gas supply means and the axis of the rotating shaft 11 of the film forming roll 5 are substantially parallel. However, in order to prevent the film formed on the gas supply means from adhering to the film forming roll 5, the gas supply means may be provided below the film forming roll 5. . Further, gas supply means may be provided for each purpose such as source gas, reaction gas, auxiliary gas, and the type of gas to be supplied, and the gas supply means may supply the film formation area A, or each Gases may be mixed and supplied to the film formation area A from one gas supply means.

Inside the film forming roll 5, magnetic field generating means 6 for generating plasma on the surface of the pair of film forming rolls 5 and forming a plasma region P is provided. The magnetic field generating means 6 is for making the plasma region P a predetermined region of each film forming roll 5.
The magnetic field generating means 6 is configured such that the generated lines of magnetic force reach from the inner surface to the outer surface (surface) of the film forming roll 5 and return to the inside of the film forming roll 5 again. The magnetic field generating means 6 is positioned with respect to the vacuum chamber 2 and can always generate a magnetic field at a predetermined position with respect to the vacuum chamber 2 even when the film forming roll 5 rotates. By changing the relative position of the vacuum chamber 2 and the magnetic field generation means 6, the generation position of the magnetic field can be adjusted, and by rotating or swinging, the plasma generation position can be moved to form a film. It is.

The plasma region P is a region formed by collecting plasma on the surface of the pair of film forming rolls 5 located in the film forming area A by the magnetic field generating means 6. Film formation is also performed outside the plasma P, but since the dense film formation is performed in the plasma region P, the plasma region P can be considered as the film formation region.
The film forming gas is jetted from the gas supply means so as to be directed to the plasma region P. Then, the substrate W wound around the pair of film forming rolls 5 passes through the plasma region P formed by the magnetic field generating means 6.

  Various types of magnetic field generating means 6 can be employed. For example, a central magnet that is long in the roll axis direction, a racetrack-shaped outer peripheral magnet that surrounds the central magnet, and these are arranged inside the roll. A magnetron magnetic field (race track magnetic field) generating mechanism including a magnetic field short-circuit member to be connected can be used. Further, if one film forming roll 5 that can form a plurality of magnetron magnetic fields is used, a film can be formed efficiently, so that productivity is further increased.

  Now, a vacuum pump 8 (exhaust means) is provided on the lower side of the vacuum chamber 2, that is, in the sub-chamber 4. The vacuum pump 8 is arranged at the center of one side wall, and is arranged so that the inflow opening 10 faces the other side wall. That is, the inflow opening 10 of the vacuum pump 8 is arranged to face the horizontal direction. It can also be said that the vacuum pump 8 is disposed on one side with respect to a plane defined by a set of points having an equal distance from the axis of the rotation shaft 11 of the pair of film forming rolls 5. In other words, the vacuum pump 8 faces the surface in the vertical (vertical) direction formed at the center between one (left side in the drawing) film forming roll 5 and the other (right side in the drawing) film forming roll 5. It is deployed on one side wall.

The vacuum pump 8 depressurizes the inside of the vacuum chamber 2 and the film formation area A before the film is formed on the surface of the substrate W, or is supplied from the gas supply means and contributes to the film formation of the film. It has a function of discharging the deposition gas to the outside of the vacuum chamber 2.
In general, the vacuum pump 8 of the plasma CVD apparatus 1 often uses a turbo molecular pump having a bearing structure suitable for this apparatus. Further, the vacuum pump 8 having a pumping speed control mechanism based on the number of rotations of the pump is more preferable because this pumping speed control mechanism can be used for controlling the film forming pressure of the plasma CVD apparatus 1.

As shown in FIG. 1, shielding means 12 is provided in the sub-chamber 4 between the vacuum pump 8 and the plasma region P to shield the dust Z generated during film formation from flowing into the vacuum pump 8. Yes. In other words, the film forming roll 5 is not seen from the inflow opening 10 of the vacuum pump 8 by the shielding means 12.
As with the vacuum chamber 2, the shielding means 12 is formed of a metal plate material such as stainless steel and is thinner than the thickness of the plate material constituting the sub-chamber 4. The shielding means 12 is formed so as to protrude from one side wall of the sub-chamber 4 (the left side wall of the sub-chamber 4 in FIG. 1), and the tip thereof extends so as to hang downward. That is, the shielding means 12 is formed in an inverted L shape in a front view, and protrudes like a ridge from one side wall of the sub chamber 4. Further, the width in the left-right direction of the shielding means 12 is wide enough to sufficiently block the inflow opening 10.

  The upper surface of the shielding means 12 is flush with the bottom of the main chamber 3, and the hanging side wall of the shielding means 12 is disposed at a predetermined interval from one side wall of the sub chamber 4. Further, it is provided in front of the inflow opening 10 provided in the vacuum pump 8. Further, the shielding means 12 is configured to shield a part (upper side) of the front of the inflow opening 10 from the sub-chamber 4, and an exhaust passage 13 is secured when the vacuum pump 8 is driven.

That is, the shielding means 12 is provided so as to intersect with a straight line connecting the vacuum pump 8 and the plasma region P, and shields the dust Z generated during film formation.
The shielding means 12 is fixed to the sub-chamber 4 (vacuum chamber 2) by a fastener (not shown) such as a bolt, and is removable from the sub-chamber 4. Therefore, the shielding means 12 can be easily replaced during maintenance of the plasma CVD apparatus 1.

Next, a procedure for forming a film on the surface of the substrate W using the plasma CVD apparatus 1 of the first embodiment described above will be described.
As shown in FIG. 1, first, the vacuum pump 8 (exhaust means) is operated to discharge the air inside the vacuum chamber 2 to the outside to bring it into a substantially vacuum state. Then, after the inside of the film formation area A is depressurized before the film is formed on the surface of the substrate W, the film supply gas (raw material gas, reaction gas, Auxiliary gas) is supplied. At this time, the pressure is adjusted so as to be the pressure P (P = about 0.1 Pa to 10 Pa) in the film formation area A, and the inside of the film formation area A is maintained at the predetermined pressure described above.

  The pressure in the film formation area A can be adjusted by adjusting the exhaust speed using a variable opening valve or the like, or a method of adjusting the exhaust speed of the vacuum pump 8 may be used. Also, in anticipation of changes such as increase in pressure due to decomposition of raw material gas by application of voltage from an AC power source (not shown), a variable opening valve for exhaust speed adjustment is set at a predetermined opening in advance. An opening degree adjusting method such as fixing and setting a low pressure may be used in combination. In this way, the time for stabilizing the pressure in the film forming area A after voltage application can be shortened.

  When a high-frequency AC or pulsed voltage from an AC power source is applied to the film forming roll 5 while maintaining a predetermined pressure condition, the film is selectively grown in the space where the magnetic field is generated by the magnetic field generating means 6. Discharge occurs, and powerful plasma and ions are generated. This plasma is generated in the vicinity of the surface of the film forming roll 5, and the region becomes a plasma region P. A film forming gas is supplied to the plasma region P by the gas supply means, and the source gas contained in the supplied film forming gas is decomposed by the plasma, and a desired film is formed on the surface of the substrate W by a chemical reaction or the like. It is formed.

  Under such circumstances, the substrate W unwound from the unwinding roll (not shown) passes through the plasma region P while being wound around the outer peripheral surface of one film forming roll 5 (upstream side). . By passing through the plasma region P, the substrate W is subjected to surface treatment. And the base material W is conveyed by the other film-forming roll 5 (downstream side) with the conveyance roller (free roll 17). The conveyed substrate W passes through the plasma region P again while being wound around the outer peripheral surface of the other film forming roll 5. The base material W is formed twice, and is wound up on a winding roll (not shown).

  At this time, since the surface of the film forming roll 5 is not exposed to the plasma region P at the center of the film forming roll 5 around which the substrate W is wound, a film is formed on the surface of the film forming roll 5. There is nothing. However, at both ends of the film forming roll 5 around which the substrate W is not wound, an insulator or the like installed on the film forming roll 5 is exposed, and the plasma CVD apparatus 1 is operated for a long time. A thick film is formed on both ends of the film forming roll 5.

The formed film has an internal stress and may peel off so as to repel as the film is deposited. The peeled film falls as dust Z so as to be pulled by gravity under the film forming roll 5, or a part of the peeled film may be scattered radially in the vacuum chamber 2. .
The residual gas that has not passed through the film forming roll 5 and has not contributed to the film formation proceeds from the plasma region P toward the vacuum pump 8. On the other hand, some of the ions and radicals formed in the vicinity of the film forming roll 5 collide with an obstacle and reach the vicinity of the vacuum pump 8 without losing energy. The ions and radicals give energy to the source gas (residual gas) and the decomposition product of the source gas between the film forming roll 5 and the vacuum pump 8, and form a film around the vacuum pump 8. It becomes like this.

  Here, in the plasma CVD apparatus 1 of the present embodiment, a shielding means 12 for preventing intrusion of dust Z (peeled film) is provided in front of the opening of the vacuum pump 8. The shielding means 12 is disposed below the pair of film forming rolls 5 and shields the falling dust Z. The dust Z comes to adhere to the side wall of the shielding means 12 and does not reach the inflow opening 10 of the vacuum pump 8. Therefore, damage to the vacuum pump 8 can be prevented by providing the shielding means 12 in the sub-chamber 4. Further, the dust Z does not accumulate in the inflow opening 10 of the vacuum pump 8, and the exhaust flow path 13 in the vacuum pump 8 can be secured.

This shielding means 12 is detachable from the sub-chamber 4, and when dust Z accumulates or the side wall is contaminated, another shielding means 12 (shielding means 12 from which dust Z has been removed) is used. Can be exchanged. By increasing the frequency of replacement of the shielding means 12, it is possible to prevent the dust Z from rising in a process such as introduction of the atmosphere, or the dust Z attached to the free roll 17 or the like is transferred to the substrate W. The cause of contamination and film defects can be eliminated. In addition, in the case of the large shielding means 12, it is good to be able to disassemble or separate itself.

As described above, by using the plasma CVD apparatus 1 of the first embodiment, dust Z can be prevented from entering the vacuum pump 8 and dust Z can be deposited in the vicinity of the vacuum pump 8. It becomes possible to prevent.
[First Modification of First Embodiment]
Next, the 1st modification of 1st Embodiment in the plasma CVD apparatus 1 of this invention is demonstrated with reference to figures.

As shown in FIG. 2, the configuration of the plasma CVD apparatus 1 according to the second modification of the first embodiment is substantially the same as the apparatus of the first embodiment (see FIG. 1).
That is, the plasma CVD apparatus 1 of the first modified example includes a vacuum chamber 2 composed of a main chamber 3 and a sub chamber 4, a pair of film forming rolls 5 disposed in the main chamber 3, and a pair of film forming films. This is the same in that it has a magnetic field generating means 6 for forming a plasma region P on the surface of the roll 5 and a vacuum pump 8 (evacuation means) arranged on one side wall of the sub chamber 4.

In addition, a gas supply means for supplying a film forming gas around the film forming area A in the vacuum chamber 2 is the same.
However, in the first modification, the structure and shape of the shielding means 12 provided in the sub-chamber 4 are greatly different. Accordingly, the arrangement of the vacuum pump 8 is also greatly different. That is, in this modification, the exhaust passage 13 is formed between the inflow opening 10 of the vacuum pump 8 and one side wall (the left side wall in FIG. 1) of the sub chamber 4. The flow path wall 14 (adapter chamber) is the shielding means 12. The flow path wall 14 is formed so as to protrude in the upstream direction from the center of one side wall, and connects the inflow opening 10 of the vacuum pump 8 and one side wall of the sub chamber 4 at a predetermined interval. It is. That is, the exhaust flow path 13 is arranged so that the vacuum pump 8 is away from the sub chamber 4 in the upstream direction. Further, the film forming roll 5 is not seen from the inflow opening 10 of the vacuum pump 8 by the flow path wall 14 (shielding means 12).

  Since the inflow opening 10 of the vacuum pump 8 does not face the side wall of the sub chamber 4, it is possible to prevent the dust Z from entering directly from the film forming roll 5. In addition, dust Z accumulates on the flow path wall 14 and does not reach the vacuum pump 8. In addition, the inflow opening 10 of the vacuum pump 8 is secured large, and problems such as performance degradation during evacuation do not occur.

In this way, by configuring the shielding means 12, the intrusion of dust Z into the vacuum pump 8 can be blocked, and damage to the vacuum pump 8 can be prevented.
In addition, since the other structure in the 1st modification of 1st Embodiment and the effect to show | play are substantially the same as 1st Embodiment, the description is abbreviate | omitted.
[Second Modification of First Embodiment]
Next, a second modification of the first embodiment in the plasma CVD apparatus 1 of the present invention will be described with reference to the drawings.

As shown in FIG. 3, the configuration of the plasma CVD apparatus 1 according to the second modification of the first embodiment is substantially the same as the apparatus of the first embodiment (see FIG. 1).
That is, the plasma CVD apparatus 1 of the second modified example includes a vacuum chamber 2 composed of a main chamber 3 and a sub-chamber 4, a pair of film forming rolls 5 disposed in the main chamber 3, and a pair of the components. This is the same in that it has a magnetic field generating means 6 for forming a plasma region P on the surface of the film roll 5 and a vacuum pump 8 (exhaust means) arranged on one side wall of the sub chamber 4.

In addition, a gas supply means for supplying a film forming gas (raw material gas) around the film forming area A is the same.
However, in the second modification, the structure and shape of the shielding means 12 provided in the sub-chamber 4 are greatly different. Accordingly, the arrangement of the vacuum pump 8 is also greatly different. That is, in this modification, the exhaust flow path 13 is formed between the bottom of the sub-chamber 4 and the vacuum pump 8, and the flow path wall 14 constituting the exhaust flow path 13 is the shielding means 12. Is a feature.

  The exhaust passage 13 is formed in a horizontally elongated shape at the lower end of one side wall of the sub-chamber 4, that is, at the bottom of the sub-chamber 4, and projects from the bottom of the sub-chamber 4 in the horizontal direction. A wall 14 is formed. The flow path wall 14 is formed so as to protrude in the upstream direction from the bottom of one side wall (the left side wall in FIG. 1) of the sub chamber 4. That is, it can be said that the sub-chamber 4 of the present modification is an L-shaped housing in front view.

  The inflow opening 10 of the sub chamber 4 is connected to the upper side of the flow path wall 14 so as to face downward. That is, the exhaust flow path 13 is arranged so that the vacuum pump 8 is away from the sub chamber 4 in the upstream direction so that the inflow opening 10 does not face the sub chamber 4 side. Further, the film forming roll 5 is not seen from the inflow opening 10 of the vacuum pump 8 by the flow path wall 14 (shielding means 12).

  Since the inflow opening 10 of the vacuum pump 8 does not face the side wall of the sub chamber 4, it is possible to prevent the dust Z from entering directly from the film forming roll 5. In addition, dust Z accumulates on the flow path wall 14 and does not reach the vacuum pump 8. In addition, the inflow opening 10 of the vacuum pump 8 is secured large, and problems such as performance degradation during evacuation do not occur.

In this way, by configuring the shielding means 12, the intrusion of dust Z into the vacuum pump 8 can be blocked, and damage to the vacuum pump 8 can be prevented.
In addition, since the other structure in the 2nd modification of 1st Embodiment and the effect to show | play are substantially the same as the 1st modification of 1st Embodiment, the description is abbreviate | omitted.
[Second Embodiment]
Next, 2nd Embodiment in the plasma CVD apparatus 1 of this invention is described with reference to figures.

As shown in FIG. 4, the configuration of the plasma CVD apparatus 1 according to the second embodiment is substantially the same as the apparatus of the first embodiment (see FIG. 1).
That is, the plasma CVD apparatus 1 of the second embodiment includes a vacuum chamber 2 composed of a main chamber 3 and a sub chamber 4, a pair of film forming rolls 5 arranged in the main chamber 3, and a pair of film forming. This is the same in that it has a magnetic field generating means 6 for forming a plasma region P on the surface of the roll 5 and a vacuum pump 8 (evacuation means) arranged on one side wall of the sub chamber 4. In addition, the gas supply means for supplying a film forming gas around the film forming area A is provided, and the shield means 12 is provided in the sub chamber 4 in the same way.

  However, the second embodiment is greatly different in that the door 15 is provided on the other side wall of the sub-chamber 4. That is, 2nd Embodiment equips the other side wall with the door part 15 so that the vacuum pump 8 arrange | positioned at one side wall of the subchamber 4 may be faced, and the door part 15 can be opened and closed freely. Further, the opening of the door portion 15 allows the sub chamber 4 and the external space to communicate with each other.

  The door portion 15 is attached to the other side wall of the sub chamber 4 via a rotation mechanism such as a hinge. The door portion 15 has the same thickness as the sub-chamber 4 and is formed of a metal plate material such as stainless steel. The door portion 15 is closed so as to be in close contact with the sub-chamber 4, and holds the inside of the sub-chamber 4 (vacuum chamber 2) in an airtight manner. Moreover, the door part 15 is good in the magnitude | size and attachment method which can take out the shielding means 12 in the subchamber 4 easily outside. A handle (not shown) that facilitates opening and closing may be provided on the outer wall of the door portion 15.

Further, in order to monitor the dust Z in the vicinity of the vacuum pump 8 and the film formed on the periphery thereof, and to confirm the discharge state of the film forming roll 5, acrylic or A transparent member such as tempered glass may be used. By using such a door portion 15, the exhaust port on the vacuum pump 8 side can be observed from the front or maintained. As a result, the time required for maintenance can be shortened and productivity can be improved. The door 15 may have any opening mechanism as long as the sub-chamber 4 and the external space can communicate with each other.

  Thus, by configuring the door portion 15, when removing the dust Z, it becomes easy to guide the film forming roll 5 that is most easily contaminated. Further, since the door portion 15 having a size sufficient for maintenance is provided, it is easy to collect and remove the accumulated dust Z and film. Furthermore, since the vacuum pump 8 does not exist in the vicinity where maintenance is performed, the piping and wiring of the vacuum pump 8 are not interfered with, and a sufficient maintenance space can be secured.

In addition, since the other structure in 2nd Embodiment and the effect to show | play are substantially the same as 1st Embodiment, the description is abbreviate | omitted.
[Third Embodiment]
Next, 3rd Embodiment in the plasma CVD apparatus 1 of this invention is described with reference to figures.

As shown in FIG. 5, the configuration of the plasma CVD apparatus 1 according to the third embodiment is substantially the same as the apparatus of the first embodiment (see FIG. 1).
That is, the plasma CVD apparatus 1 according to the third embodiment includes a vacuum chamber 2 composed of a main chamber 3 and a sub chamber 4, a pair of film forming rolls 5 disposed in the main chamber 3, and a pair of film forming films. This is the same in that it has a magnetic field generating means 6 for forming a plasma region P on the surface of the roll 5 and a vacuum pump 8 (evacuation means) arranged on one side wall of the sub chamber 4.

In addition, a gas supply means for supplying a film forming gas around the film forming area A is also provided. In addition, the shielding means 12 is provided on one side wall of the sub-chamber 4 and the door portion 15 is provided on the other side wall.
However, in the third embodiment, the exhaust flow path 13 is formed between the inflow opening 10 of the vacuum pump 8 and the shielding means 12, and the exhaust speed adjusting means 16 is provided in the exhaust flow path 13. The point is very different. That is, in the third embodiment, the exhaust speed adjusting means 16 is provided between the shielding means 12 and the exhaust flow path 13 connected to the vacuum pump 8, and the exhaust flow rate adjusting means 16 adjusts the flow area of the exhaust flow path 13. The feature is that the flow rate of the gas passing through the exhaust passage 13 is controlled.

  The exhaust speed adjusting means 16 is a plate member that is pivotably suspended at the lower end of the side wall of the shielding means 12, and the exhaust speed adjusting means 16 rotates around the horizontal axis to cause the flow path of the exhaust flow path 13. The area is adjusted. A linear motion mechanism (open / close door that slides up and down) that moves the exhaust speed adjusting means 16 up and down may be used. The width of the exhaust velocity adjusting means 16 in the left-right direction is the same as that of the shielding means 12 and has a width that sufficiently blocks the inflow opening 10.

The exhaust speed adjusting means 16 is controlled by a control unit (not shown) provided in the plasma CVD apparatus 1.
For example, when the exhaust velocity adjusting means 16 is in an almost upright state, the exhaust passage 13 is blocked, and it is possible to prevent the film forming gas from passing through the exhaust passage 13. When the control unit rotates the exhaust speed adjusting means 16 so as to swing upward, the exhaust flow path 13 is opened little by little, and the flow area of the exhaust flow path 13 is increased and the exhaust flow rate is increased. A film forming gas or the like can be passed through the flow path 13. Therefore, the exhaust speed adjusting means 16 is controlled in its upward rotation amount by the control unit, and changes the flow passage area of the exhaust flow passage 13.

Further, the exhaust speed adjusting means 16 is disposed below the vacuum pump 8 so that the exhaust of the film forming gas or the like flowing from the film forming roll 5 once passes through the bottom of the sub chamber 4. Yes. At this time, a large dust Z contained in the exhaust gas such as a film forming gas is deposited on the bottom of the sub-chamber 4 so that the dust Z does not reach the vacuum pump 8.
The shaft center of the rotary shaft 11 of the exhaust speed adjusting means 16 may be arranged at the upper end of the exhaust speed adjusting means 16 or at the lower end thereof, or the exhaust speed adjusting means 16
It may be arranged in the approximate center.

  For example, as shown in FIG. 5, when the axis of the rotating shaft 11 of the exhaust speed adjusting means 16 is at the upper end, opening the exhaust speed adjusting means 16 causes the dust Z accumulated on the bottom of the subchamber 4 to pass through the door. 15 can be easily brought to the side, and the dust Z can be easily recovered from the door portion 15. On the other hand, when the axis of the rotary shaft 11 of the exhaust speed adjusting means 16 is at the lower end, the upper part of the exhaust speed adjusting means 16 rotates largely, but the shaft center part (lower part) does not rotate compared to the upper part. The dust Z collected in the vicinity of the shaft center does not get over the exhaust speed adjusting means 16, and the dust Z does not collect on the vacuum pump 8 side.

If a mechanism capable of sealing is added to the exhaust speed adjusting means 16, the amount of gas such as a film forming gas flowing into the vacuum pump 8 when the exhaust speed adjusting means 16 is closed can be stopped. And the film-forming area A and the exterior can be connected without stopping the vacuum pump 8.
Further, the exhaust speed adjusting means 16 is detachable from the shielding means 12, and can be easily replaced during maintenance of the plasma CVD apparatus 1. When the exhaust speed adjusting means 16 is wide, it is preferable to have a structure that can be disassembled and separated in order to facilitate replacement when the exhaust speed adjusting means 16 becomes dirty.

In this way, by providing the evacuation speed adjusting means 16 in the shielding means 12, the pressure in the vacuum chamber 2 during film formation can be adjusted without depending on the adjustment of the exhaust capability of the vacuum pump 8 (exhaust means). Can do.
Next, a procedure for reducing the pressure in the film forming area A using the exhaust speed adjusting means 16 will be described.

First, the vacuum pump 8 is operated to depressurize the film formation area A before forming a film on the substrate W, and then the film supply gas is continuously supplied into the film formation area A by the gas supply means. At the same time, the pressure in the film formation area A is adjusted and maintained so that the pressure in the film formation area A becomes PD (PD = about 0.1 Pa to 10 Pa).
At this time, the pressure in the film forming area A is adjusted by the exhaust speed adjusting means 16. The flow area of the exhaust flow path 13 is adjusted by the rotation of the exhaust speed adjusting means 16, and the flow rate of the gas passing through the exhaust flow path 13 is controlled. By controlling in this way, the pressure in the film formation area A can be adjusted to a desired pressure. Therefore, when a film is formed on the substrate W, the vacuum pump 8 can be operated in a state close to the rated rotational speed.

Also, in anticipation of changes such as increase in pressure due to decomposition of raw material gas by application of voltage from an AC power source (not shown), a variable opening valve for exhaust speed adjustment is set at a predetermined opening in advance. Fix and set to low pressure. In this way, the time for stabilizing the pressure in the film forming area A after voltage application can be shortened.
As described above, when the pressure in the film forming area A is reduced using the exhaust speed adjusting means 16, the vacuum pump 8 can be maintained near the rated rotation speed, and the operation of the vacuum pump 8 becomes stable. Therefore, the process of reducing the pressure in the film forming area A can be stably performed. Further, by making it possible to adjust the exhaust speed using the exhaust speed adjusting means 16, the pressure adjustment range can be increased, or the pressure adjustment response speed can be increased.

In addition, since the other structure in 3rd Embodiment and the effect to show | play are substantially the same as 1st Embodiment, the description is abbreviate | omitted.
[Fourth Embodiment]
Next, 4th Embodiment in the plasma CVD apparatus 1 of this invention is described with reference to figures.

As shown in FIG. 6, the configuration of the plasma CVD apparatus 1 according to the fourth embodiment is substantially the same as the apparatus of the third embodiment (see FIG. 5).
That is, the plasma CVD apparatus 1 of the fourth embodiment includes a vacuum chamber 2 composed of a main chamber 3 and a sub chamber 4, a pair of film forming rolls 5 arranged in the main chamber 3, and a pair of film forming. This is the same in that it has a magnetic field generating means 6 for forming a plasma region P on the surface of the roll 5 and a vacuum pump 8 (evacuation means) arranged on one side wall of the sub chamber 4. In addition, a gas supply means for supplying a film forming gas around the film forming area A is also provided. The same is true in that the shielding means 12 is provided on one side wall of the sub-chamber 4 and the door portion 15 is provided on the other side wall. Further, the exhaust passage 13 is formed between the inflow opening 10 of the vacuum pump 8 and the shielding means 12, and the exhaust speed adjusting means 16 is provided in the exhaust passage 13.

  However, the fourth embodiment is greatly different in that a plurality of main chambers 3 are connected so as to be adjacent in the upstream / downstream direction (horizontal direction) and the vacuum chamber 2 is connected to the main chamber 3. . Further, in the fourth embodiment, a plurality of plasma CVD apparatuses 1 of the third embodiment are connected, and a door portion 15 provided in one sub-chamber 4 constituting the vacuum chamber 2 and one sub-chamber 4 are provided. The door portion 15 provided in another adjacent sub-chamber 4 is characterized by being arranged so as to face each other.

In the case of this embodiment, two subchambers 4 are provided in the vacuum chamber 2 as shown in FIG.
First, the one sub-chamber 4 is arranged such that the door portion 15 provided on the side wall of the one sub-chamber 4 is on the downstream side (right side in the drawing). Therefore, the vacuum pump 8 provided in one sub-chamber 4 is arranged on the upstream side (left side in the drawing). Next, the door 15 provided on the side wall of the other sub-chamber 4 is arranged so as to be on the upstream side (left side in the drawing). Therefore, the vacuum pump 8 provided in the other sub-chamber 4 is arranged on the downstream side (right side in the drawing). That is, one sub-chamber 4 on the upstream side and the other sub-chamber 4 adjacent to one sub-chamber 4 are arranged such that the door portions 15 provided on the side walls of each sub-chamber 4 face each other. Yes.

  When another sub-chamber 4 (including the main chamber 3) exists on the upstream side of one sub-chamber 4, the door portion 15 provided on the side wall of the other sub-chamber 4 is located on the upstream side (left side). The other subchamber 4 and the one subchamber 4 are arranged so that the vacuum pumps 8 provided in each subchamber 4 face each other. When another sub-chamber 4 (including the main chamber 3) is present on the downstream side of the other sub-chamber 4, the door portion 15 provided on the side wall of the further sub-chamber 4 is provided on the downstream side (right side). The vacuum pumps 8 provided in each sub-chamber 4 face each other in another sub-chamber 4 and another sub-chamber 4.

  As described above, the door portions 15 provided on the side walls of the respective sub-chambers 4 are arranged so as to face each other, so that the space where the door portions 15 face each other can be used as a work space for maintenance. As a result, the maintainability of each sub-chamber 4 is enhanced. Further, by providing one space for two adjacent sub-chambers 4, maintenance of the adjacent sub-chambers 4 can be performed simultaneously.

In addition, since the other structure in 4th Embodiment and the effect to show | play are substantially the same as 3rd Embodiment, the description is abbreviate | omitted.
As described above, the shielding means 12 is provided in the sub-chamber 4 of the plasma CVD apparatus 1 to prevent the dust Z from entering the vacuum pump 8 and to deposit the dust Z in the vicinity of the vacuum pump 8. Can be prevented. Further, by providing the door portion 15 on the side wall of the sub-chamber 4, even if dust Z accumulates in the vicinity of the vacuum pump 8, the dust Z can be easily taken out.
[Fifth Embodiment]
Next, a fifth embodiment in the plasma CVD apparatus 1 of the present invention will be described.

The configuration of the plasma CVD apparatus 1 according to the fifth embodiment is substantially the same as the apparatus of the first to fourth embodiments.
However, the fifth embodiment is characterized in that the base material W is disposed only in the main chamber 3 and a door capable of separating between the main chamber 3 and the sub chamber 4 is provided.
When film formation is completed and the substrate W is taken out, a gas such as air or nitrogen is taken into the main chamber 3 or the sub-chamber 4 to bring the inside to atmospheric pressure, which is called a vent. The film adhering to the inside of the chamber is peeled off and scattered by an inflow of gas due to the vent, and scattered and adheres as dust Z in the chamber. In particular, in the sub-chamber 4 located downstream of the film formation area A, more dust Z is generated and scattered than in the main chamber 3.

  By closing the door that can separate the main chamber 3 and the sub chamber 4 and venting, the dust Z generated and scattered in the sub chamber remains in the sub chamber 4 and is prevented from being transported to the main chamber 3. it can. In the main chamber 3, a film forming roll 5 and a free roll 17 for transporting the substrate W to be formed and a substrate W are disposed, and dust generated in the sub-chamber 4 on these surfaces. Z can be prevented from adhering, dust Z adhering to the surface of the substrate W can be reduced, and the quality of the film can be improved.

If the door capable of separating the main chamber 3 and the sub chamber 4 can seal the opening, the main chamber 3 and the sub chamber 4 can be independently vented.
Thereby, for example, the sub-chamber 4 can vent the main chamber 3 while maintaining the vacuum, and the substrate W can be replaced. Since the sub-chamber 4 can be maintained in a vacuum state during the exchange of the substrate W, it is possible to prevent the coating in the sub-chamber 4 from being peeled off or scattered by adsorbing moisture in the air.

Further, while maintaining the main chamber 3 in a vacuum, only the sub-chamber 4 can be vented to perform maintenance of the dust Z adhering to the sub-chamber 4. It is also possible to shorten the evacuation for the time required.
Therefore, it is preferable to provide valves for introducing gas and air into the main chamber 3 and the sub chamber 4 individually.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. In particular, in the embodiment disclosed this time, matters that are not explicitly disclosed, for example, operating conditions and operating conditions, various parameters, dimensions, weights, volumes, and the like of a component deviate from a range that a person skilled in the art normally performs. Instead, values that can be easily assumed by those skilled in the art are employed.

DESCRIPTION OF SYMBOLS 1 Plasma CVD apparatus 2 Vacuum chamber 3 Main chamber 4 Subchamber 5 Film-forming roll 6 Magnetic field generation means 7 Film-forming apparatus 8 Exhaust means (vacuum pump)
DESCRIPTION OF SYMBOLS 9 Deposition area partition means 10 Inflow opening part 11 Rotating shaft 12 Shielding means 13 Exhaust flow path 14 Flow path wall (adapter chamber)
15 Door 16 Exhaust speed adjusting means 17 Free roll A Deposition area B Pressurization area P Plasma area W Substrate Z Dust

Claims (10)

A vacuum chamber, a pair of film forming rolls disposed in the vacuum chamber and connected to an AC power source, a magnetic field generating means for forming a plasma region on the surface of the pair of film forming rolls, and one of the vacuum chambers In a plasma CVD apparatus having an exhaust means disposed on the side wall and exhausting gas in the vacuum chamber to the outside, and forming a film on the surface of the substrate,
A plasma CVD apparatus, wherein a shielding means for preventing film formation on the exhaust means is provided in the vacuum chamber between the exhaust means and the plasma region.   2. The plasma CVD apparatus according to claim 1, wherein the vacuum chamber includes a main chamber provided with the pair of film forming rolls and a sub chamber provided below the main chamber having an exhaust unit on one of the side walls.   The plasma CVD apparatus according to claim 1, wherein the shielding unit is disposed in front of an inflow opening provided in the exhaust unit.   The plasma CVD apparatus according to claim 1 or 2, wherein the inflow opening of the exhaust means has an opening downward.   The vacuum chamber is provided with a door portion on the other side wall so as to face the exhaust means provided on one side wall, and the vacuum chamber and the external space can communicate with each other by opening the door portion. The plasma CVD apparatus according to any one of claims 1 to 4, wherein: An exhaust path is formed between the inflow opening of the exhaust means and the shielding means,
The plasma CVD apparatus according to any one of claims 1 to 5, wherein an exhaust speed adjusting means for adjusting an inflow speed of a gas flowing into the exhaust means is provided in the exhaust path.   The plasma CVD apparatus according to claim 6, wherein the exhaust speed adjusting means adjusts a flow area of the exhaust path and controls a flow rate of gas passing through the exhaust path.   The plasma CVD apparatus according to any one of claims 1 to 7, wherein the pair of film forming rolls are connected and disposed in the vacuum chamber so as to be adjacent to each other.   A plurality of subchambers are provided for each of the pair of film forming rolls, and a door part provided in one subchamber and a door part provided in another subchamber adjacent to the one subchamber are mutually connected. The plasma CVD apparatus according to claim 8, wherein the plasma CVD apparatus is disposed so as to face each other.   The plasma CVD apparatus according to any one of claims 2 to 9, wherein the base material is disposed only in the main chamber, and a door capable of separating the main chamber and the sub-chamber is provided.