JP2014154493A5 - - Google Patents

Download PDF

Info

Publication number
JP2014154493A5
JP2014154493A5 JP2013025679A JP2013025679A JP2014154493A5 JP 2014154493 A5 JP2014154493 A5 JP 2014154493A5 JP 2013025679 A JP2013025679 A JP 2013025679A JP 2013025679 A JP2013025679 A JP 2013025679A JP 2014154493 A5 JP2014154493 A5 JP 2014154493A5
Authority
JP
Japan
Prior art keywords
voltage
semiconductor light
output
lighting device
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013025679A
Other languages
Japanese (ja)
Other versions
JP2014154493A (en
JP6032042B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2013025679A priority Critical patent/JP6032042B2/en
Priority claimed from JP2013025679A external-priority patent/JP6032042B2/en
Publication of JP2014154493A publication Critical patent/JP2014154493A/en
Publication of JP2014154493A5 publication Critical patent/JP2014154493A5/ja
Application granted granted Critical
Publication of JP6032042B2 publication Critical patent/JP6032042B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Description

第1の発明は、半導体発光素子の点灯装置であって、
直流電源に直列接続されてオンオフ制御されるスイッチング素子と、
前記スイッチング素子と直列に接続されて前記スイッチング素子のオン時に前記直流電源から電流が流れるインダクタンス要素と、
前記スイッチング素子のオン時に前記インダクタンス要素に蓄積されたエネルギーを前記スイッチング素子のオフ時に半導体発光素子に放出する回生ダイオードと、
前記スイッチング素子と直列に接続した検出抵抗を備え、前記検出抵抗の端子間電圧を検出することで前記スイッチング素子に流れる電流を検出する検出手段と、
第1端子に前記検出手段により検出された検出値を受け且つ第2端子に閾値を受け前記検出値が前記閾値に達すると出力を切り替えるコンパレータを含み、前記コンパレータの出力に応じて前記スイッチング素子をオフさせると共に、前記インダクタンス要素のエネルギー放出が完了したときに前記スイッチング素子をオンさせる制御手段と、
前記閾値を決定する電圧を変更可能な可変抵抗素子と、
を備えることを特徴とする。
1st invention is a lighting device of a semiconductor light emitting element,
A switching element connected in series to a DC power source and controlled to be turned on and off;
An inductance element connected in series with the switching element and through which a current flows from the DC power source when the switching element is on;
A regenerative diode that releases energy stored in the inductance element when the switching element is on to the semiconductor light emitting element when the switching element is off;
A detection unit including a detection resistor connected in series with the switching element, and detecting a current flowing through the switching element by detecting a voltage between terminals of the detection resistor;
The detection value receiving the threshold and the second terminal receives the detection value detected by the detection means to the first terminal includes a comparator for switching the output to reach the threshold value, the switching element in response to the output of the comparator Control means for turning off and turning on the switching element when energy release of the inductance element is completed;
A variable resistance element capable of changing a voltage for determining the threshold;
It is characterized by providing.

制御集積回路IC1の4番ピン(CS)はチョッパ電流検出端子であり、その電圧が、
IC内部のRNFとCNFで構成されるノイズフィルタを介して、コンパレータCP1の
+入力端子に印加される。コンパレータCP1の−入力端子には乗算回路52から出力される閾値電圧Vthcsが印加されている。
The fourth pin (CS) of the control integrated circuit IC1 is a chopper current detection terminal, and its voltage is
The voltage is applied to the + input terminal of the comparator CP1 through a noise filter composed of R NF and C NF inside the IC. The threshold voltage V thcs output from the multiplier circuit 52 is applied to the negative input terminal of the comparator CP1.

Claims (6)

直流電源に直列接続されてオンオフ制御されるスイッチング素子と、
前記スイッチング素子と直列に接続されて前記スイッチング素子のオン時に前記直流電源から電流が流れるインダクタンス要素と、
前記スイッチング素子のオン時に前記インダクタンス要素に蓄積されたエネルギーを前記スイッチング素子のオフ時に半導体発光素子に放出する回生ダイオードと、
前記スイッチング素子と直列に接続した検出抵抗を備え、前記検出抵抗の端子間電圧を検出することで前記スイッチング素子に流れる電流を検出する検出手段と、
第1端子に前記検出手段により検出された検出値を受け且つ第2端子に閾値を受け前記検出値が前記閾値に達すると出力を切り替えるコンパレータを含み、前記コンパレータの出力に応じて前記スイッチング素子をオフさせると共に、前記インダクタンス要素のエネルギー放出が完了したときに前記スイッチング素子をオンさせる制御手段と、
前記閾値を決定する電圧を変更可能な可変抵抗素子と、
を備えることを特徴とする半導体発光素子の点灯装置。
A switching element connected in series to a DC power source and controlled to be turned on and off;
An inductance element connected in series with the switching element and through which a current flows from the DC power source when the switching element is on;
A regenerative diode that releases energy stored in the inductance element when the switching element is on to the semiconductor light emitting element when the switching element is off;
A detection unit including a detection resistor connected in series with the switching element, and detecting a current flowing through the switching element by detecting a voltage between terminals of the detection resistor;
The detection value receiving the threshold and the second terminal receives the detection value detected by the detection means to the first terminal includes a comparator for switching the output to reach the threshold value, the switching element in response to the output of the comparator Control means for turning off and turning on the switching element when energy release of the inductance element is completed;
A variable resistance element capable of changing a voltage for determining the threshold;
A lighting device for a semiconductor light-emitting element, comprising:
前記可変抵抗素子は、予め定められた温度特性で前記半導体発光素子に供給する出力電流を調整するように温度に応じて抵抗値が変化する感温抵抗素子を含むことを特徴とする請求項1に記載の半導体発光素子の点灯装置。 2. The variable resistance element includes a temperature- sensitive resistance element whose resistance value changes according to temperature so as to adjust an output current supplied to the semiconductor light emitting element with a predetermined temperature characteristic. A lighting device for a semiconductor light-emitting element according to 1. 前記可変抵抗素子は、抵抗値が可変な回路素子を含むことを特徴とする請求項1に記載の半導体発光素子の点灯装置。 The lighting device for a semiconductor light emitting element according to claim 1, wherein the variable resistance element includes a circuit element having a variable resistance value. 前記制御手段が、
入力電圧を受ける第3端子と、
制御電源電圧を第1入力として受け、自身の出力を第2入力として帰還的に受けるエラーアンプと、
前記入力電圧および前記エラーアンプの出力を受けて出力電圧を生成し、前記出力電圧を前記コンパレータの前記第2端子に前記閾値として与える乗算回路と、
を含み
前記可変抵抗素子と直列に接続する分圧抵抗をさらに備え、
前記可変抵抗素子は、前記分圧抵抗とともに前記制御電源電圧を分圧することで前記入力電圧を生成し、
前記入力電圧が、前記閾値を決定する電圧であり、
前記乗算回路における前記入力電圧と前記出力電圧の入出力特性が線形領域と飽和領域とを有し、前記可変抵抗素子の抵抗値可変幅は、少なくとも前記入出力特性における動作点を前記線形領域に位置させる範囲で前記入力電圧を可変生成するように予め定められたことを特徴とする請求項1乃至3のいずれか1項に記載の半導体発光素子の点灯装置。
The control means is
A third terminal for receiving an input voltage;
An error amplifier that receives a control power supply voltage as a first input and receives its output as a second input in a feedback manner;
A multiplication circuit that receives the input voltage and the output of the error amplifier to generate an output voltage, and applies the output voltage to the second terminal of the comparator as the threshold;
It includes,
A voltage dividing resistor connected in series with the variable resistance element;
The variable resistance element generates the input voltage by dividing the control power supply voltage together with the voltage dividing resistor,
The input voltage is a voltage that determines the threshold;
The input / output characteristics of the input voltage and the output voltage in the multiplier circuit have a linear region and a saturation region, and the variable resistance element has a resistance value variable width at least an operating point in the input / output characteristic in the linear region. 4. The lighting device for a semiconductor light emitting element according to claim 1 , wherein the input voltage is variably generated within a range to be positioned . 5.
前記第2入力が、前記エラーアンプが飽和するクランプ電圧であることを特徴とする請求項4に記載の半導体発光素子の点灯装置。   The lighting device for a semiconductor light emitting element according to claim 4, wherein the second input is a clamp voltage at which the error amplifier is saturated. 請求項1乃至5のいずれか1項に記載の半導体発光素子の点灯装置と、
前記半導体発光素子の点灯装置から電流を供給される半導体発光素子と、
を備えることを特徴とする照明装置。
A lighting device for a semiconductor light-emitting element according to any one of claims 1 to 5,
A semiconductor light emitting element supplied with a current from the lighting device of the semiconductor light emitting element;
A lighting device comprising:
JP2013025679A 2013-02-13 2013-02-13 Semiconductor light-emitting element lighting device and lighting fixture using the same Active JP6032042B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013025679A JP6032042B2 (en) 2013-02-13 2013-02-13 Semiconductor light-emitting element lighting device and lighting fixture using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013025679A JP6032042B2 (en) 2013-02-13 2013-02-13 Semiconductor light-emitting element lighting device and lighting fixture using the same

Publications (3)

Publication Number Publication Date
JP2014154493A JP2014154493A (en) 2014-08-25
JP2014154493A5 true JP2014154493A5 (en) 2016-03-17
JP6032042B2 JP6032042B2 (en) 2016-11-24

Family

ID=51576133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013025679A Active JP6032042B2 (en) 2013-02-13 2013-02-13 Semiconductor light-emitting element lighting device and lighting fixture using the same

Country Status (1)

Country Link
JP (1) JP6032042B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6308082B2 (en) * 2014-09-22 2018-04-11 株式会社デンソー Injector drive device
JP6545946B2 (en) * 2014-11-04 2019-07-17 ローム株式会社 Switching converter, control circuit therefor, lighting device using the same, electronic device
KR101768528B1 (en) * 2016-03-21 2017-08-18 주식회사 대한엠피에스 A frying system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3496525B2 (en) * 1998-07-09 2004-02-16 松下電工株式会社 Power supply
JP2001286131A (en) * 2000-04-03 2001-10-12 Matsushita Electric Works Ltd Power-source unit

Similar Documents

Publication Publication Date Title
JP2014507752A5 (en)
JP2017521840A5 (en)
JP2015533451A5 (en)
JP2012010574A5 (en) Semiconductor device, power supply device and LED lighting device
CN103945601B (en) LED driver circuit
JP2015116077A5 (en)
DE602009000908D1 (en) LEDs lighting device
JP2014166135A5 (en)
TWI596981B (en) control circuit for LED AND Active Bleeder THEREOF
MY176670A (en) Semiconductor device
JP2014154493A5 (en)
RU2015104900A (en) FUSE BURNING INDICATOR
JP2010533965A5 (en)
JP2017539079A5 (en)
JP2012160392A5 (en)
JP2018501628A5 (en)
JP2011008514A5 (en)
JP2017195150A5 (en)
TWI457046B (en) Light emitting diode driving integrated circuit with a multi-step current setting function and method of setting a multi-step current of a light emitting diode driving integrated circuit
JP2015515839A5 (en)
JP6495911B2 (en) Breeder for improving LED dimming
JP2017021970A (en) Lighting device, luminaire and vehicle using the same
KR101265135B1 (en) Unidirectional lighting emitting diode module device
TW201511455A (en) Power supply
KR101265136B1 (en) Unidirectional lighting emitting diode module device capable of dimming control