JP2014154382A - Method of manufacturing thin-film device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film device capable of improving efficiency of a deposition step when an organic electroluminescence element and a TFT element for driving the organic electroluminescence element are integrally formed.SOLUTION: A foundation layer 11 and a gate electrode film 12 are formed on a substrate 1 (a step 1), and a gate insulating film 13 is formed (a step 2). Thereafter, an electron injection layer (a metal oxide) 3 of an organic electroluminescence element 10 and an oxide semiconductor layer (a layer having a source region and a drain region) 14 of a TFT element 20 are simultaneously formed by sputtering (a step 3). Next, a source/drain electrode film 16 is formed (a step 4), and a protection film 15 is formed (a step 5). Then, a buffer layer 9, an electron transport layer 4, a light-emitting layer 5, a hole transport layer 6, a hole injection layer 7, and an anode 8, of the organic electroluminescence element 10, are formed so as to be laminated in this order (a step 6).

Description

  The present invention relates to a method for manufacturing a thin film device, and more specifically, a pixel electrode of an organic electroluminescent element mounted on an organic EL display device or the like and a thin film transistor (TFT) for driving the organic electroluminescent element are placed close to each other. The present invention relates to a method for manufacturing a thin film device.

  The organic electroluminescent element has a structure in which a plurality of layers such as an electron transport layer, a light emitting layer, and a hole transport layer are laminated between a cathode and an anode, and is a material suitable for constituting each layer. Research and development are being conducted.

  Of these, materials that are easily deteriorated due to the influence of moisture and oxygen in the atmosphere, such as alkali metals such as LiF and aluminum, have been used for the cathode. Therefore, when applying an organic electroluminescent element to a display or the like, strict sealing is required, and it is difficult to reduce costs and make flexible. On the other hand, in recent years, by forming a metal oxide film that is stable in the air and has a low work function on the surface of the lower electrode, the electron injection into the organic layer is promoted, and the electroluminescent element that can operate stably in the air It is known that (organic-organic hybrid organic EL element: Hybrid Organic Inorganic LED: HOILED) can be realized.

  The characteristics of this hybrid organic electroluminescence device include <1> high atmospheric stability and <2> the lower electrode serving as the contact portion with the transistor used as a cathode in consideration of application to a display. (In a normal organic electroluminescence device, the lower electrode serves as an anode: see Non-patent Documents 1 and 2 below).

As a metal oxide constituting such an electron injecting oxide semiconductor layer, one having a high conduction band energy level is preferable. Titanium oxide (TiO ₂ ), zinc oxide (ZnO), tungsten oxide (WO ₃ ). It is already known that niobium oxide (Nb ₂ O ₅ ), iron oxide (Fe ₂ O ₃ ), tin oxide (SnO ₂ ) and the like can be used (see Patent Documents 1 and 2 below).

By the way, in order to increase the efficiency of the manufacturing process of a device comprising such an organic electroluminescent element and a TFT element that drives the organic electroluminescent element, the organic electroluminescent element and the TFT element are integrally formed. There is a known technique to do this.
Specifically, as shown in FIG. 3, a film forming method is known in which each layer of the organic electroluminescent element 110 and the TFT element 120 is sequentially formed.

That is, first, the base layer 111 is formed on the substrate 101, and then the pixel electrode 102 and the gate electrode film 112 are formed (step 1).
Next, a gate insulating film 113 of the TFT element is formed on the organic electroluminescent element and the TFT element (step 2).
Thereafter, an oxide semiconductor layer 114 of the TFT element is formed, and a predetermined region of the organic electroluminescent element and the TFT element is etched (step 3).
Subsequently, an electron injection layer (metal oxide) 103 of an organic electroluminescence device (HOILED) is formed (step 4).

Further, source / drain electrodes 116 of the TFT elements are formed (step 5).
Thereafter, a protective film 115 for the TFT element is formed on the organic electroluminescent element and the TFT element (step 6).
Subsequently, a buffer layer 109, an electron transport layer 104, a light-emitting layer 105, a hole transport layer 106, a hole injection layer 107, and an anode 108 of an organic electroluminescent element (HOILED) are stacked in this order (Step 7).
As described above, the organic electroluminescent element and the TFT element are integrally formed.

JP 2012-4492 A JP 2007-53286 A

APPLIED PHYSICS LETTERS Volume 89, page 183510 (2006) Advanced Materials Volume 23, page 1829 (2011)

However, since the metal oxide constituting the above-described electron injection layer (metal oxide) 103 is assumed to be formed using a complicated manufacturing method such as a sputtering method, the film forming process is likely to be complicated. There has been a demand for an efficient film formation technique.
The present invention has been made in view of the above circumstances, and a thin film device capable of improving the efficiency of a film forming process when an organic electroluminescent element and a TFT element that drives the organic electroluminescent element are integrally formed. An object of the present invention is to provide a manufacturing method.

A method for manufacturing a thin film device according to the present invention includes:
In a method for manufacturing a thin film device in which an organic electroluminescent element and a TFT element that drives the organic electroluminescent element are integrally formed,
In the organic electroluminescent element, a plurality of layers including an electron injection layer and a light emitting layer are laminated between a first electrode film made of a cathode and a second electrode film made of an anode, and In the TFT element, a plurality of layers including a gate electrode film, a gate insulating film, and a layer having a source region and a drain region are stacked on the substrate,
At that time, the electron injection layer of the organic electroluminescence device and the layer having the source region and the drain region of the TFT device are simultaneously formed of the same metal oxide material.

  Here, “to form simultaneously” means not only the case where the electron injection layer and the layer having the source region and the drain region are physically formed at the same time, but also the positions of the film formation position and the film formation means, for example. The relationship is scanned relatively, and the case where the electron injection layer and the layer having the source region and the drain region are sequentially formed in a series of flows is also included.

Here, it is preferable that the electron injection layer and the layer having the source region and the drain region are formed by a sputtering method.
The electron injection layer of the organic electroluminescence device is preferably formed on the first electrode film made of a cathode.
In addition, the organic electroluminescent element is formed by stacking the first electrode film and the electron injection layer in this order on the substrate, and the TFT element is formed on the substrate with the gate electrode film and The gate insulating film and the layer having the source region and the drain region are preferably stacked in this order.

The metal oxide material is preferably an oxide semiconductor containing at least one element of indium, gallium, zinc, tin, aluminum, silicon, germanium, boron, manganese, titanium, and molybdenum.
The metal oxide material is preferably an oxide semiconductor containing indium gallium zinc oxide as a material.

  In addition, after the lamination process is completed, the layer having the electron injection layer of the organic electroluminescent element, the source region and the drain region of the TFT element from the substrate side or the opposite side of the lamination direction to the substrate. It is also possible to increase the electron mobility of the layer having the electron injection layer, the source region, and the drain region by irradiating the substrate with predetermined light.

  In this case, it is preferable that the predetermined light is any one of flash lamp light, excimer laser light, and CW laser light (continuous light). Incidentally, the “flash lamp” means that the electrodes are sealed at both ends of a quartz glass tube or a high silica glass tube having a straight tube shape, a spiral shape, a U shape, a ring shape, etc. It is a light source in which a rare gas such as xenon or hydrogen gas of ˜10 kPa is enclosed and hydrogen light is emitted only for a short time.

  According to the thin film device manufacturing method of the present invention, an organic electroluminescent element and a TFT element for driving the organic electroluminescent element are integrally formed, the electron injection layer of the organic electroluminescent element, and the TFT element The layers having the source region and the drain region are simultaneously laminated by sputtering the same metal oxide material, and the two steps that have been conventionally separated are combined into one step. Therefore, the efficiency of the film forming process can be greatly improved.

It is a figure which shows each process of the manufacturing method of the thin film device which concerns on this embodiment in time series. It is a schematic diagram which shows the layer structure of the organic electroluminescent element which concerns on this embodiment. It is a figure which shows each process of the manufacturing method of the thin film device which concerns on a prior art in time series.

<Embodiment>
Hereinafter, a method of manufacturing a thin film device according to an embodiment of the present invention will be described with reference to the drawings. The thin film device is manufactured by integrally forming an organic electroluminescent element (HOILED: hereinafter the same) 10 and a TFT element (thin film transistor element: same hereinafter) 20 for driving the organic electroluminescent element 10. It is.

FIG. 1 shows each step of the manufacturing method according to the embodiment in order.
First, after forming the base layer 11 on the substrate 1, the pixel electrode (cathode in the embodiment shown in FIG. 1) 2 of the organic electroluminescence device 10 and the gate electrode film 12 of the TFT device 20 are formed (step 1). The gate electrode film 12 may be formed of a transparent electrode such as ITO, or may be formed of an opaque material such as aluminum.
Next, the gate insulating film 13 of the TFT element 20 is formed on the organic electroluminescent element 10 and the TFT element 20 (step 2).
Thereafter, an electron injection layer (metal oxide) 3 of the organic electroluminescence device 10 and an oxide semiconductor layer (layer having a source region and a drain region) 14 of the TFT device 20 are formed at the same time. A predetermined region of the TFT element 20 is etched (step 3).
That is, this step 3 is a characteristic feature of the present embodiment. The electron injection layer 3 and the oxide semiconductor layer (a layer having a source region and a drain region) 14 are formed of the same metal oxide material using a sputtering method. Are formed at the same time.

  This is because the same material is used for forming the electron injection layer 3 of the organic electroluminescence device 10 and the semiconductor (oxide) layer (layer having a source region and a drain region) 14 of the TFT device 20 that have been separately formed. By using a metal oxide (oxide semiconductor: the same applies hereinafter), simultaneous formation is possible, thereby improving the efficiency of the film formation process. Furthermore, when these films are formed using a sputtering method, the efficiency of the film forming process can be made more effective.

Further, the source / drain electrode film 16 of the TFT element 20 is formed (step 4).
Thereafter, a protective film 15 for the TFT element 20 is formed on the organic electroluminescent element 10 and the TFT element 20 (step 5).
Subsequently, the electron injection layer (organic layer) 9, the electron transport layer 4, the light emitting layer 5, the hole transport layer 6, the hole injection layer 7, and the anode 8 of the organic electroluminescent element 10 are laminated in this order (step 6). ).
As described above, the organic electroluminescent element 10 and the TFT element 20 are integrally formed, and a thin film device is manufactured.

  Comparing each step of FIG. 1 showing the present embodiment and each step of FIG. 3 showing the prior art, the step 3 and the step 4 of the prior art are summarized as a new step 3. That is, in step 3 in the present embodiment, the electron injection layer (metal oxide) 3 of the organic electroluminescent element 10 and the oxide semiconductor layer (layer having a source region and a drain region) 14 of the TFT element 20 are simultaneously and the same. The device is devised so as to be formed of a metal oxide material, thereby improving the efficiency of device manufacture.

FIG. 2 schematically shows the stacked structure of the organic electroluminescent element 10 in an enlarged manner. Hereinafter, each layer of the organic electroluminescent element 10 will be specifically described.
That is, as shown in FIG. 2, an electrode injection layer (first metal) made of an electrode film (cathode: pixel electrode film) 2 made of an ITO film and an IGZO (trademark registration No. 5451821) film on a transparent substrate 1. Oxide layer) 3, an electron injection layer 9 made of an organic layer, an electron transport layer 4, a light emitting layer 5, a hole transport layer 6 made of an α-npd layer, and a hole injection made of a molybdenum trioxide layer. A layer (second metal oxide layer) 7 and an electrode film (anode) 8 made of gold are laminated in this order.

  The layer configuration can be changed as appropriate, and the buffer layer 9 can be omitted. However, by providing the buffer layer 9 on the electron injection layer 3 in this manner, the crystallization of the low molecular compound in the low molecular compound layer is suppressed, whereby the organic-inorganic hybrid type organic electroluminescent device becomes a light emitting layer. Even in the case of having a layer formed of a low molecular compound, etc., it is possible to obtain a suppression of leakage current and uniform surface emission.

  In addition, each independent layer of the organic electroluminescent element includes, for example, an electrode film (cathode) 2, an electron injection layer (first metal oxide layer) 3 made of an IGZO film, an electron injection layer (organic layer) 9, and the like. And an electron transport layer 4, a light emitting layer 5, a hole injection layer (second metal oxide layer) 7 made of molybdenum trioxide layer, and an electrode film (anode) 8 made of gold. A form in which any of these functions as a hole transport layer and an electron transport layer is also one of the preferred forms of the organic electroluminescence device of the present embodiment.

The layer structure of the TFT element 20 will be briefly described below.
First, as shown in FIG. 1, a gate electrode film 12 made of, for example, a transparent aluminum (Al) layer or an opaque ITO layer is formed on a substrate 1 and a base layer 2, and then on the gate electrode film 12. A gate insulating film 13 made of silicon oxide is formed with a thickness of, for example, 100 nm on a part of the substrate 1, and an oxide semiconductor layer 14 such as IGZO is formed with a thickness of, for example, 50 nm on the gate insulating film 13. After that, a protective film 15 made of silicon oxide is formed at a substrate temperature of 300 ° C. by plasma CVD. This IGZO is amorphous in the film formation state.

  In addition, although the film thickness etc. of each said layer can be adjusted suitably, Preferably it is 1-150 nm, More preferably, it is 20-100 nm. In addition to the sputtering method, other film forming methods such as an evaporation method and an ion plating method can be employed as the film forming method.

  Therefore, in Step 3 of FIG. 1, the electron injection layer (metal oxide) 3 and the oxide semiconductor layer 14 can be replaced by another film formation method such as an evaporation method instead of the sputtering method.

In the present embodiment, in the stacked element structure, an electron injection layer (metal oxide) 3 made of an IGZO film and an oxide semiconductor layer are formed from the substrate (transparent resin substrate such as glass substrate or PET) 1 side. 14 may be irradiated with predetermined light.
The light irradiation toward the electron injection layer (metal oxide) 3 and the oxide semiconductor layer 14 may be performed simultaneously or sequentially.

  In this case, if the predetermined light is light capable of increasing free electrons by losing oxygen due to a direct action effect by light energy and a temperature increase effect accompanying light irradiation in the irradiated region. The light is not limited to flash lamp light or excimer laser, and may be other light. For example, a gas laser such as an Ar laser or a solid-state laser such as a YAG laser may be used, and continuous light such as a CW laser may be used.

Here, a case where flash lamp light and excimer laser light are used will be described as a representative example.
First, the flash lamp light will be described. The region of the electron injection layer (metal oxide) 3 made of the IGZO film irradiated with the flash lamp light has a direct action effect due to light energy and a temperature rise effect due to light irradiation. Since oxygen is deficient and free electrons increase due to the addition of, the region has a lower resistance than the region not irradiated with flash lamp light.

  In addition, the oxide semiconductor layer (a layer having a source region and a drain region) 14 made of an IGZO film irradiated with flash lamp light is also irradiated with predetermined light after film formation to improve the electron mobility. Therefore, a layer containing a metal oxide which is originally not suitable as an electron injection layer because of low electron mobility can be easily formed as a good electron injection layer.

Here, the energy density (irradiation intensity) per pulse of the flash lamp needs to be an energy density at which the oxygen bonds in the IGZO film are released by the irradiation, oxygen atoms are lost, and free electrons increase. is there. As a result, the resistance value in this region decreases. On the other hand, the energy density (irradiation intensity) per pulse is determined by the shrinkage or warpage of the substrate (corresponding to the transparent substrate 1 shown in FIG. 1; the same in the following embodiment) or the layer from this substrate. It is necessary to set the density (strength) so that no peeling occurs. From this point of view, the energy density (irradiation intensity) per pulse of the flash lamp light is preferably 0.01 to 500 J / cm ² .

  The width per pulse (light emission time) is also preferably set to 0.001 to 100 msec, for the same reason as described for the energy density (irradiation intensity).

Furthermore, it is preferable that the wavelength of the flash lamp light includes a wavelength in the range of 200 to 1500 nm for the same reason as described for the energy density (irradiation intensity).
In addition, it is preferable that the said flash lamp light contains the wavelength from which the absorptivity in an IGZO film becomes high.

Next, in the above embodiment, a case where excimer laser light is used instead of flash lamp light as irradiation light will be briefly described.
As the excimer laser, a KrF laser, an ArF laser, a XeF laser, a KrCl laser, an ArCl laser, or the like can be used in addition to the XeCl excimer laser.
In addition, although a basic laminated structure is not different from that irradiated with the flash lamp light, for example, an appropriate film thickness of each layer may be different.

The energy density (irradiation intensity) per pulse of the excimer laser light is preferably 1 to 1000 mJ / cm ² , for example, and the width (light emission time) per pulse is set to 1 to 1000 nsec, for example. Further, the wavelength of the excimer laser light preferably includes a wavelength within a range of 400 nm or less, for example.

  In addition, the irradiation light acts on the IGZO film, but it is necessary to prevent the substrate from being damaged as much as possible. From this point of view, it is preferable to select pulsed light such as flash light or excimer laser light that can intermittently apply energy.

  In addition, since the present embodiment is a TFT element having a “bottom gate structure”, the gate electrode film 12 is formed before the oxide semiconductor layer (IGZO film 14). There is no damage to the oxide semiconductor layer during film formation, which is advantageous in terms of characteristic deterioration and characteristic variation as compared with the TFT element having the “top gate structure” according to the second embodiment described below. In addition, it is convenient in manufacturing because it can be used in common with the a-Si line.

However, as a matter of course, the method for manufacturing a thin film device according to the embodiment of the present invention can be applied not only to a bottom gate structure but also to a thin film device including a TFT element having a top gate structure.
In addition, the light applied to the electron injection layer 3 and the oxide semiconductor layer 14 may be incident from the substrate 1 side or may be incident from the opposite side (the opposite side of the substrate 1 in the stacking direction). It is preferable that the light is incident from a direction in which light irradiation is efficiently performed.

  In the above embodiment, the layer configuration of the organic electroluminescent element 10 and the TFT element 20 is an example, and is not limited to this.

  In the above embodiment, the IGZO film is used as the oxide semiconductor layer. However, the present invention is not limited to this, and instead of this, indium, gallium, zinc, tin, aluminum, silicon, germanium, and boron are used. Alternatively, an oxide semiconductor layer containing at least one element of manganese, titanium, and molybdenum may be used. The composition ratio of IGZO constituting the IGZO film is In: Ga: Zn: O = 1: 1: 1: 4, but this composition ratio is not limited to this.

  In the above embodiment, an amorphous IGZO film is used as the oxide semiconductor layer. However, the oxide semiconductor layer is formed of another amorphous metal oxide material or a polycrystalline metal oxide material such as a ZnO film. May be.

  In the above-described embodiment method, the metal oxide layers (corresponding to the IGZO film) 3 and 14 are formed by the sputtering method. However, the pulse laser deposition method, the electron beam deposition method, the coating process is performed. Other film forming methods such as a film method may be used.

  Hereinafter, the manufacturing method of the thin film device according to the present embodiment will be further described using specific examples.

(Example)
[1] (Step 1)
A commercially available transparent glass substrate (hereinafter also simply referred to as a substrate) 1 with an ITO electrode film 2 having an average thickness of 0.7 mm is prepared, and this substrate 1 is a substrate in a chamber of a mirrortron sputtering apparatus having an ITO target. Fixed to the holder. At this time, a metal mask was additionally provided so that the ITO electrode film 2 on the substrate 1 could be patterned to a width of 3 mm. After reducing the pressure in the chamber to about 1 × 10 ⁻⁴ Pa, sputtering was performed with argon and oxygen introduced. Thereby, the ITO electrode film 2 having a thickness of 90 nm was formed.
Further, a gate electrode film 12 having a thickness of 50 nm made of an aluminum layer was formed by a sputtering method.

[2] (Step 2)
Thereafter, a gate insulating film 13 having a thickness of 100 nm was formed on the pixel electrode 2 and the gate electrode film 12 by plasma CVD.

[3] (Step 3)
Next, the substrate 1 was fixed to a substrate holder in a chamber of a magnetron sputtering apparatus having an IGZO target with a metal mask. After reducing the pressure in the chamber to about 1 × 10 ⁻⁴ Pa, sputtering of IGZO was performed in the same pattern as ITO with argon and oxygen introduced. As a result, an electron injection layer (IGZO film) 3 for the organic electroluminescent element 10 having a thickness of 10 nm was formed. Thereafter, ultrasonic cleaning was performed in acetone and isopropanol for 10 minutes, respectively, and the mixture was further boiled in isopropanol for 5 minutes. The substrate 1 subjected to such treatment was taken out of isopropanol, dried by nitrogen blowing, and UV ozone cleaning was performed for 20 minutes.

  Simultaneously with the formation of the electron injection layer (IGZO film) 3, an oxide semiconductor layer (oxide semiconductor layer (a layer having a source region and a drain region)) 14 for the TFT element 20 was formed by the sputtering process. .

[4] (Step 4)
Next, the source / drain electrode film 16 for the TFT element 20 was formed by sputtering molybdenum.

[5] (Step 5)
Next, the protective film 15 for TFT elements made of silicon oxide was formed by plasma CVD.

[6] (Step 6)
Thereafter, the remaining layers of the organic electroluminescent element 10 were formed.
That is, the buffer layer 9 having a thickness of 10 nm was formed by spin coating, and the electron transport layer 4 having a thickness of 30 nm was formed by vacuum deposition.

Thereafter, the substrate 1 was fixed to the substrate holder in the chamber of the vacuum deposition apparatus. Bis (10-hydroxybenzo [h] quinolinato) beryllium (Bebq2), iridium tris (1-phenylisoquinoline) (Ir (piq) 3) (see formula (1) below), N, N′-di ( 1-naphthyl) -N, N′-diphenyl-1,1′-biphenyl-4,4′-diamine (α-NPD) (see the following formula (2)) is placed in an alumina crucible, and a deposition source. Set. The inside of the vacuum deposition apparatus was depressurized to about 1 × 10 ⁻⁵ Pa, and co-deposited with Bebq2 as a host and Ir (piq) 3 as a dopant. Thereby, the light emitting layer 5 having a thickness of 35 nm was formed. At this time, the doping concentration was such that Ir (piq) 3 was 6% by weight with respect to the entire light emitting layer.

Next, α-NPD was deposited to form a hole transport layer 6 having a thickness of 40 nm. Next, after purging with nitrogen, molybdenum trioxide and gold were placed in an alumina crucible and set in a vapor deposition source. The inside of the vacuum evaporation apparatus was depressurized to about 1 × 10 ⁻⁵ Pa, molybdenum trioxide (second metal oxide) was evaporated, and a 10 nm-thick hole injection layer 7 was formed. Next, gold was deposited to form an electrode film (second electrode film: anode) 8 having a thickness of 50 nm.
In order to form each layer of the organic electroluminescent element 10, a layer having a desired pattern was formed using a stainless steel vapor deposition mask.

1, 101 substrate (transparent substrate)
2,102 Pixel electrode 3,103 Electron injection layer (metal oxide)
9, 109 Buffer layer 4, 104 Electron transport layer 5, 105 Light emitting layer 6, 106 Hole transport layer 7, 107 Hole injection layer (second metal oxide layer)
8,108 Gold (electrode film (anode))
DESCRIPTION OF SYMBOLS 10, 110 Organic electroluminescent element 11, 111 Underlayer 12, 112 Gate electrode film 13, 113 Gate insulating film 14, 114 Oxide semiconductor layer 15, 115 TFT protective film 16, 116 Source / drain electrode film 20, 120 TFT element

Claims (8)

In a method for manufacturing a thin film device in which an organic electroluminescent element and a TFT element that drives the organic electroluminescent element are integrally formed,
In the organic electroluminescent element, a plurality of layers including an electron injection layer and a light emitting layer are laminated between a first electrode film made of a cathode and a second electrode film made of an anode, and In the TFT element, a plurality of layers including a gate electrode film, a gate insulating film, and a layer having a source region and a drain region are stacked on the substrate,
In that case, a method of manufacturing a thin film device, wherein the electron injection layer of the organic electroluminescence device and the layer having the source region and the drain region of the TFT device are formed simultaneously using the same metal oxide material. .   2. The method of manufacturing a thin film device according to claim 1, wherein the electron injection layer and the layer having the source region and the drain region are formed by a sputtering method.   3. The method of manufacturing a thin film device according to claim 1, wherein an electron injection layer of the organic electroluminescence element is formed on the first electrode film.   The organic electroluminescent element is formed by stacking the first electrode film and the electron injection layer in this order on the substrate, and the TFT element is formed on the substrate by the gate electrode film and the gate. The method for manufacturing a thin film device according to claim 1, wherein an insulating film and a layer having the source region and the drain region are stacked in this order.   The metal oxide material is an oxide semiconductor containing at least one element of indium, gallium, zinc, tin, aluminum, silicon, germanium, boron, manganese, titanium, and molybdenum. The manufacturing method of the thin film device any one of 1-4.   The method of manufacturing a thin film device according to claim 1, wherein the metal oxide material is an oxide semiconductor containing indium gallium zinc oxide as a material.   After the lamination process is completed, the electron injection layer of the organic electroluminescent element and the layer having the source region and the drain region of the TFT element are predetermined from the substrate side or the opposite side of the lamination direction to the substrate. The thin film device according to claim 1, wherein the electron mobility of the electron injection layer and the layer having the source region and the drain region is increased. Method. In this case, the predetermined light is any one of flash lamp light, excimer laser light, and CW laser light (continuous light). The thin film device according to any one of claims 1 to 7, Production method.