JP2014132621A - Thin film device manufacturing method - Google Patents

Thin film device manufacturing method Download PDF

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Publication number
JP2014132621A
JP2014132621A JP2013000620A JP2013000620A JP2014132621A JP 2014132621 A JP2014132621 A JP 2014132621A JP 2013000620 A JP2013000620 A JP 2013000620A JP 2013000620 A JP2013000620 A JP 2013000620A JP 2014132621 A JP2014132621 A JP 2014132621A
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thin film
oxide semiconductor
light
element
film
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Mitsuru Nakada
充 中田
Hiroto Sato
弘人 佐藤
Hirohiko Fukagawa
弘彦 深川
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Nippon Hoso Kyokai <Nhk>
日本放送協会
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Abstract

A method of manufacturing a thin film device in which a pixel electrode of a pixel element as well as a source region and a drain region of a thin film transistor can be formed of the same oxide semiconductor without increasing the number of photolithography processes.
Among thin film devices, a TFT element is formed by laminating a plurality of layers including a gate electrode film, a gate insulating film, and a predetermined oxide semiconductor layer (hereinafter referred to as IGZO film) on a substrate. At the same time, the pixel element (organic EL element 200) is formed by laminating a plurality of layers including the predetermined IGZO film 4 on the substrate 1, and at this time, the IGZO film 4 in the TFT element 100 and the pixel element The IGZO film 4 is integrally formed using the same material, and the excimer laser light is irradiated from the substrate 1 side to the IGZO film 4 so that the IGZO film 4 overlaps the gate electrode film 2 when viewed from the substrate 1 side. The regions (source region 6a, drain region 6b, and pixel electrode 6c) of the IGZO film 4 that do not become low resistance are reduced.
[Selection] Figure 1

Description

  The present invention relates to a method for manufacturing a thin film device, and more particularly to a method for manufacturing a thin film device in which a thin film transistor and a pixel electrode mounted in an organic EL display device or a liquid crystal display device are arranged close to each other.

  In recent years, thin film transistors (hereinafter sometimes referred to as TFTs) intended for use in display driving elements and the like include oxide semiconductors containing indium, gallium, and zinc (indium gallium zinc oxide (InGaZnO (IGZO))), Research on a manufacturing method of a TFT using an oxide semiconductor made of zinc oxide (ZnO) or the like as a channel has been actively conducted, and various studies have been applied to actual devices.

  A TFT using such an oxide semiconductor for a channel has an advantage of higher mobility than a TFT using amorphous silicon (a-Si), which is well-known as a liquid crystal display driving element, for a channel.

  In addition, since oxide semiconductors can be formed at room temperature using sputtering or the like, TFTs using oxide semiconductors for channels can be used not only for glass substrates but also for resins such as polyethylene naphthalate (PEN) and polyethersulfone (PES). It can also be formed on a substrate.

On the other hand, transparent conductive films such as an ITO film that is an oxide containing indium and tin have high transmittance for visible light, and are used as pixel electrodes for liquid crystals and organic EL.
In a liquid crystal display or an organic EL display driven by a TFT, the voltage applied to the pixel electrode and the current flowing through the pixel electrode are controlled by connecting the pixel electrode of the pixel element to the source / drain electrode of the TFT. Conventionally, since transparency is required for such a pixel electrode, a transparent conductive material such as indium tin oxide (ITO) is used unlike the opaque source / drain electrode material of TFT.
By the way, in such a technique, in order to increase the efficiency of the process of forming the transparent electrode, an attempt is made to integrally form the source / drain portion of the TFT element and the pixel electrode of the pixel element.

  That is, in the method for manufacturing a thin film transistor array described in Patent Document 1, the channel region, the source region, the drain region, and the pixel electrode are formed of the same oxide semiconductor. After forming all the layer structures in the TFT, an opening extending to the oxide semiconductor layer is provided in a desired region (a region corresponding to the source region, the drain region, and the pixel electrode) of the uppermost protective insulating film. Thus, by exposing the oxide semiconductor to reducing plasma (or plasma containing a doping element), the resistance of the source region, the drain region, and the pixel electrode is simultaneously reduced and the channel region (the region on the oxide semiconductor layer) is reduced. Thus, the region facing the gate electrode) remains high resistance.

JP 2008-40343

  However, in the manufacturing method described in Patent Document 1 described above, in order to expose only a desired region of the oxide semiconductor to the plasma, an opening is provided in the desired region of the protective insulating film as described above. As a result, the number of photolithography processes increases, which may lead to complicated manufacturing processes and increased manufacturing costs.

  The present invention has been made in view of the above circumstances, and without increasing the number of photolithography processes, the pixel electrode of the pixel element is integrally formed of the same oxide semiconductor together with the source region and the drain region of the thin film transistor. An object of the present invention is to provide a method for manufacturing a thin film device to be obtained.

A method for manufacturing a thin film device according to the present invention includes:
In a method of manufacturing a thin film device including a thin film transistor element and a pixel element driven by the thin film transistor element,
A thin film device manufacturing method including the thin film transistor element and a pixel element driven by the thin film transistor element, the thin film transistor element including at least a gate electrode film, a gate insulating film, and a predetermined oxide semiconductor layer on a substrate A plurality of layers are stacked in the vertical direction, and the pixel element is formed by stacking a plurality of layers including at least the predetermined oxide semiconductor layer in the vertical direction on the substrate.
After that, between the oxide semiconductor layer and the gate electrode film, the oxide semiconductor layer is irradiated with predetermined light from either one of the upper and lower end faces close to the gate electrode film, The source region and the drain region on the oxide semiconductor layer in the thin film transistor element, which do not overlap the gate electrode film on the line of sight when viewing the light traveling direction from the incident side, and in the pixel element The pixel electrode on the oxide semiconductor layer is reduced in resistance.

  Here, it is preferable that the predetermined light is any one of flash lamp light, excimer laser light, and CW laser light (continuous light). Incidentally, the “flash lamp” means that the electrodes are sealed at both ends of a quartz glass tube or a high silica glass tube having a straight tube shape, a spiral shape, a U shape, a ring shape, etc. It is a light source in which a rare gas such as xenon or hydrogen gas of ˜10 kPa is enclosed and hydrogen light is emitted only for a short time.

  The oxide semiconductor preferably contains at least one element of indium, gallium, zinc, tin, aluminum, silicon, germanium, boron, manganese, titanium, and molybdenum.

The oxide semiconductor preferably includes indium gallium zinc oxide as a material.
Further, when the predetermined light is the excimer laser light, the energy density per pulse of the excimer laser light is preferably 1 to 1000 mJ / cm 2 .
In addition, when the predetermined light is the flash lamp light, it is preferable that an energy density per pulse of the flash lamp light is 0.01 to 500 J / cm 2 .

  A method of manufacturing a thin film device according to the present invention is a method of manufacturing a thin film device including a thin film transistor element and a pixel element driven by the thin film transistor element. The thin film transistor element includes at least a gate electrode film and a gate insulation on a substrate. A plurality of layers including a film and a predetermined oxide semiconductor layer are stacked in the vertical direction, and the pixel element includes a plurality of layers including at least the predetermined oxide semiconductor layer stacked in the vertical direction on the substrate. In that case, the oxide semiconductor layer in the thin film transistor element and the oxide semiconductor layer in the pixel element are integrally formed of the same material, and thereafter, the oxide semiconductor layer and Of the gate electrode film, a predetermined light is directed toward the oxide semiconductor layer from one of the upper and lower end faces close to the gate electrode film. So that allowed to irradiation.

  When predetermined light is irradiated from the substrate side toward the oxide semiconductor layer, the gate electrode film acts as a mask for the irradiation light, and the light advances from the light incident side to the oxide semiconductor layer. When the direction is viewed, the predetermined light is irradiated only to a region that does not overlap the gate electrode film on the line of sight. Thereby, only the source region and the drain region on the oxide semiconductor layer in the thin film transistor element and the pixel electrode on the oxide semiconductor layer in the pixel element can be selected and the resistance can be reduced. The channel region on the oxide semiconductor layer therein remains high resistance.

  Accordingly, a thin film device including a thin film transistor element and a pixel element driven by the thin film transistor element can be manufactured by a simple method without increasing the number of photolithography processes.

It is process drawing which shows the manufacturing method of the thin film device of the self-alignment type bottom gate structure based on the 1st Embodiment of this invention. It is process drawing which shows the manufacturing method of the thin film device of the self-alignment type top gate structure based on the 2nd Embodiment of this invention.

<First Embodiment>
Hereinafter, a method for manufacturing a thin film device according to a first embodiment of the present invention will be described with reference to the drawings.

FIG. 1 shows the steps of the manufacturing method according to the first embodiment in order.
First, an aluminum (Al) layer is formed on a glass substrate 1 at room temperature using a sputtering method, and the aluminum (Al) layer is patterned using a photolithography method and an etching method to form a gate electrode film 2. Form.

  Next, a gate insulating film made of silicon oxide is formed to a thickness of 200 nm on the gate electrode film (partially on the substrate) by plasma CVD.

  Next, an InGaZnO film (hereinafter simply referred to as an IGZO film: oxide semiconductor layer) 4 is formed to a thickness of 50 nm on the gate insulating film. The IGZO film 4 is an oxide semiconductor layer containing indium, gallium, and zinc, and is formed in a room temperature environment using a sputtering method. The IGZO film 4 is amorphous in the film formation state. In this case, a sintered body of IGZO is used as the sputtering target. The composition ratio of indium, gallium, zinc, and oxygen in the IGZO target is, for example, 1: 1: 1: 4. Further, the IGZO film 4 is subjected to an appropriate patterning process using a photolithography method and an etching method.

  A protective film 5 made of silicon oxide is formed by plasma CVD at a substrate temperature of 300 ° C. (FIG. 1A). Next, thermal annealing is performed at 300 ° C. for 1 hour in air for the purpose of improving drain current and improving reliability of TFT characteristics.

  Next, as shown in FIG. 1B, excimer laser light (for example, XeCl excimer laser) is irradiated from the substrate 1 side toward the IGZO film 4 to the element structure stacked as described above. Since a part of the excimer laser is reflected and absorbed by the gate electrode, the excimer laser light is not irradiated to the IGZO region (corresponding to the channel region) on the gate electrode. On the other hand, an excimer laser is irradiated to the IGZO region where the gate electrode is not located below. The region irradiated with excimer laser is the region where excimer laser is not irradiated because oxygen is lost and free electrons increase due to the direct action effect by light energy and the temperature increase effect accompanying light irradiation. As a result, a region having a low resistance (low resistance IGZO film 4 ′) is obtained (FIG. 1C). This low resistance region is used as the source region and drain region of the TFT element 100 and the pixel electrode 6 c of the organic EL element 200.

  Conventionally, a source electrode and a drain electrode are formed in the source region and the drain region, respectively, and transparent made of indium tin oxide (ITO) or the like different from the source / drain electrode material so as to be in contact with the source electrode or the drain electrode. The electrode is used as a pixel electrode. In the present embodiment, the source region 6a, the drain region 6b, and the pixel electrode 6c are integrally formed of a transparent IGZO film or the like, so that the step of forming the source electrode and the drain electrode and the step of forming the transparent electrode are separately performed. There is no need to provide it. Further, the yield can be improved by reducing these steps.

  When the organic EL element 200 is manufactured after this, after etching a part of the protective film 5 located on the pixel electrode 6c, the hole injection layer 32, the hole transport layer, etc. are formed on the pixel electrode 6c. 33, the light emitting layer 34, the hole blocking layer 35, and the electron transport layer 36 are formed, and the cathode 31 is further laminated thereon to form the organic EL element 200 (FIG. 1 (d)).

  As described above, the manufacturing method according to this embodiment includes both the source region 6a and the drain region 6b of the TFT element 100 and the pixel electrode 6c of the organic EL element 200 in the thin film device in which the TFT element and the pixel element are arranged close to each other. If the oxide semiconductor layer is formed of the same conductive material, the manufacturing process efficiency can be improved, and further, the oxide semiconductor layer can be formed by performing light resistance irradiation treatment of the oxide semiconductor. This is based on the inventors' knowledge that only predetermined regions (source region 6a, drain region 6b, and pixel electrode 6c) can be selected easily and accurately.

Here, the energy density (irradiation intensity) per pulse needs to be an energy density at which oxygen bonds in the oxide semiconductor layer are released, oxygen atoms are lost, and free electrons increase by the irradiation. is there. As a result, the resistance value in this region decreases. On the other hand, the energy density (irradiation intensity) per pulse needs to be a density (intensity) that does not cause shrinkage or warping of the substrate or peeling of the oxide semiconductor layer from the substrate 1 due to the irradiation. is there. From this point of view, the energy density (irradiation intensity) per pulse of the excimer laser is preferably 1 to 1000 mJ / cm 2 .

  Also, the width per pulse (light emission time) is preferably set to, for example, 1 to 1000 nsec for the same reason as described for the energy density (irradiation intensity).

  Furthermore, it is preferable that the wavelength of the excimer laser includes a wavelength within a range of 400 nm or less for the same reason as described for the energy density (irradiation intensity).

  The excimer laser preferably includes a wavelength at which the absorptance in the IGZO film 4 increases.

  In addition, the irradiated light can be XeCl excimer as long as it is capable of losing oxygen and increasing free electrons due to the direct action effect of light energy and the temperature increase effect accompanying light irradiation in the irradiated region. It is not limited to a laser, and an excimer laser such as a KrF laser, an ArF laser, a XeF laser, a KrCl laser, or an ArCl laser, a gas laser such as an Ar laser, or a solid laser such as a YAG laser may be used. Further, light other than laser light such as flash lamp light may be used. It is also possible to use continuous light such as a CW laser.

When flash lamp light is used instead of the excimer laser light, the energy density (irradiation intensity) per pulse of the flash lamp light is preferably 0.01 to 500 J / cm 2 .

  Also, the width per pulse (light emission time) of the flash lamp light is preferably set to 0.001 to 100 msec, for the same reason as described for the energy density (irradiation intensity).

  Furthermore, it is preferable that the wavelength of the flash lamp light includes a wavelength in the range of 200 to 1500 nm for the same reason as described for the energy density (irradiation intensity).

The irradiation light needs to be such that it acts on the oxide semiconductor layer but does not damage the substrate 1 or the like as much as possible. From this point of view, it is preferable to select pulsed light such as excimer laser light or flash lamp light that can intermittently apply energy.
In addition, since the TFT element manufactured by the manufacturing method according to the present embodiment is formed so that the gate electrode film 2 and the source / drain regions 6a and 6b do not overlap, it is possible to reduce the parasitic capacitance.

  In the above-described embodiment method, the gate insulating film 3 is formed of silicon oxide. However, the present invention is not limited to this, and various materials can be used. It is preferable that the material has a higher transmittance with respect to light (for example, excimer laser) used for reducing the resistance.

  In addition, since the present embodiment is a TFT element having a “bottom gate structure”, the gate electrode film 2 is formed before the oxide semiconductor layer (IGZO film 4). There is no damage to the oxide semiconductor layer during film formation, which is advantageous in terms of characteristic deterioration and characteristic variation as compared with the TFT element having the “top gate structure” according to the second embodiment described below. In addition, it is convenient in manufacturing because it can be used in common with the a-Si line.

  As described above, the self-aligned bottom gate thin film device according to this embodiment can be manufactured.

<Second Embodiment>
Hereinafter, a method of manufacturing a thin film device according to the second embodiment of the present invention will be described with reference to the drawings. Note that the second embodiment differs from the first embodiment described above only in the order of the layer configuration and the direction of irradiating predetermined light, and therefore only the parts different from the first embodiment will be described. In addition, the description of the overlapping description is omitted. In the second embodiment, the layer corresponding to the layer of the first embodiment is given a reference numeral obtained by adding 10 to the reference numeral of the layer of the first embodiment.

FIG. 2 shows each step of the manufacturing method according to the second embodiment in order.
First, the IGZO film 14 is formed to a thickness of 50 nm on the glass substrate 11. The IGZO film 14 is an oxide semiconductor layer containing indium, gallium, and zinc, and is formed in a room temperature environment by a sputtering method. This IGZO film 14 is amorphous at the time of film formation. In this case, a sintered body of IGZO is used as the sputtering target. The composition ratio of indium, gallium, zinc, and oxygen in the IGZO target is, for example, 1: 1: 1: 4. Further, the IGZO film 14 is subjected to an appropriate patterning process using a photolithography method and an etching method.

  Next, a gate insulating film 13 made of silicon oxide is formed to a thickness of 200 nm on the IGZO film 14 by plasma CVD. Next, an aluminum (Al) layer is formed in a room temperature environment using a sputtering method, and the gate electrode film 12 is formed by patterning the aluminum (Al) layer using a photolithography method and an etching method. Next, a protective film 15 made of silicon oxide is formed at a substrate temperature of 300 ° C. by plasma CVD (FIG. 2A). Next, thermal annealing is performed in air at 300 ° C. for 1 hour for the purpose of improving drain current and improving reliability of TFT characteristics.

  Next, as shown in FIG. 2B, excimer laser light (for example, XeCl excimer laser) or flash is applied to the element structure laminated as described above from the gate electrode film 12 side toward the IGZO film 14. Irradiate lamp light. Since a part of the excimer laser light or the like is reflected and absorbed by the gate electrode film 12, the excimer laser light or the like is not irradiated to the IGZO film 14 (corresponding to the channel region) located below the gate electrode film 12. On the other hand, the IGZO film 14 (corresponding to the source / drain regions 16a and 16b and the pixel electrode 16c) on which the gate electrode film 12 does not exist is irradiated with excimer laser light or the like. The region irradiated with excimer laser light etc. is irradiated with excimer laser because oxygen is lost and free electrons increase due to the direct action effect due to light energy and the temperature increase effect accompanying light irradiation. A region having a low resistance (low-resistance IGZO film 14 ') compared to a region that is not formed (FIG. 2C). Thereby, the fall of drain current can be suppressed.

  As shown in this embodiment, the source region 16a, the drain region 16b, and the pixel electrode 16c are formed integrally and simultaneously, so that the step of forming the source electrode and the drain electrode and the step of forming the transparent electrode are separately performed. There is no need to provide it. Also, the yield can be improved by increasing the efficiency of these manufacturing processes.

In the case of manufacturing an organic EL panel, after etching a part of the protective film 15 and the gate insulating film 13 on the pixel electrode 16c formed integrally with the drain region 16b, the organic EL element 210 is formed on the pixel electrode 16c. It forms (FIG.2 (d)).
Further, the TFT element 110 manufactured by the manufacturing method of the present embodiment can reduce the parasitic capacitance so that the gate electrode film 12 and the source / drain regions 16a and 16b do not overlap.

The characteristics of the excimer laser light and flash lamp light in the second embodiment (energy density per pulse (irradiation intensity), width per pulse (light emission time), wavelength of light used), the predetermined light Since the changed mode, the material for forming each layer, the method for forming the oxide semiconductor layer, and the like are the same as those in the first embodiment, description thereof will be omitted.
As described above, the self-aligned top gate structure thin film device according to this embodiment can be manufactured.

  In the above two embodiments, the layer structure of the TFT elements 100 and 110 and the organic EL elements 200 and 210 is an example, and the present invention is not limited to this. Moreover, it is also possible to use a liquid crystal element instead of an organic EL element.

  In the above-described two embodiment methods, the gate insulating film and the protective film are formed of silicon oxide. However, the present invention is not limited to this, and the light used for reducing the resistance of the oxide semiconductor layer described above is used. It is preferable that the material has higher transmittance with respect to (for example, excimer laser light).

  Further, in the above two embodiment methods, the IGZO films 4 and 14 are used as the oxide semiconductor layer, but the present invention is not limited to this, and instead, indium, gallium, zinc, tin, aluminum Alternatively, an oxide semiconductor layer containing at least one element of silicon, germanium, boron, manganese, titanium, and molybdenum may be used. Further, the composition ratio of IGZO constituting the IGZO films 4 and 14 is In: Ga: Zn: O = 1: 1: 1: 4, but this composition ratio is not limited to this.

  In the above-described two embodiments, the amorphous IGZO films 4 and 14 are used as the oxide semiconductor layer, but may be formed of a polycrystalline oxide semiconductor layer such as a ZnO film.

  In the above-described two embodiment methods, the IGZO films 4 and 14 as oxide semiconductor layers are formed by sputtering, but pulse laser deposition, electron beam deposition, coating deposition, and the like are used. Other film forming methods may be used.

  In the above-described two embodiment methods, the gate insulating films 3 and 13 and the protective films 5 and 15 are formed of silicon oxide. However, the present invention is not limited to this, and the above-described low oxide semiconductor layer is used. It is more preferable if the material has a higher transmittance with respect to light (for example, excimer laser) used for resistance.

1,11 Glass substrate (substrate)
2, 12 Gate electrode film 3, 13 Gate insulating film 4, 14 IGZO film 4 ', 14' Low resistance IGZO film 4a, 14a Channel region (IGZO film)
5, 15 Protective film 6a, 16a Source region 6b, 16b Drain region 6c, 16c Drain region 31, 41 Cathode 32, 42 Hole injection layer 33, 43 Hole transport layer 34, 44 Light emitting layer 35, 45 Hole blocking layer 36, 46 Electron transport layer 100, 110 TFT element 200, 210 Organic EL element

Claims (6)

  1. In a method of manufacturing a thin film device including a thin film transistor element and a pixel element driven by the thin film transistor element,
    A thin film device manufacturing method including the thin film transistor element and a pixel element driven by the thin film transistor element, the thin film transistor element including at least a gate electrode film, a gate insulating film, and a predetermined oxide semiconductor layer on a substrate A plurality of layers are stacked in the vertical direction, and the pixel element is formed by stacking a plurality of layers including at least the predetermined oxide semiconductor layer in the vertical direction on the substrate.
    After that, between the oxide semiconductor layer and the gate electrode film, the oxide semiconductor layer is irradiated with predetermined light from one of the upper and lower end faces close to the gate electrode film, The source region and the drain region on the oxide semiconductor layer in the thin film transistor element, which do not overlap the gate electrode film on the line of sight when viewing the light traveling direction from the incident side, and in the pixel element A method of manufacturing a thin film device, comprising reducing a resistance of a pixel electrode on the oxide semiconductor layer.
  2.   2. The method of manufacturing a thin film device according to claim 1, wherein the predetermined light is any one of excimer laser light, flash lamp light, and CW laser light.
  3.   2. The method of manufacturing a thin film transistor, wherein the oxide semiconductor contains at least one element of indium, gallium, zinc, tin, aluminum, silicon, germanium, boron, manganese, titanium, and molybdenum. Or the manufacturing method of the thin film device of 2.
  4.   The method for manufacturing a thin film device according to claim 1, wherein the oxide semiconductor includes indium gallium zinc oxide as a material.
  5. 5. The energy density per pulse of the excimer laser light is 1 to 1000 mJ / cm 2 when the predetermined light is the excimer laser light. A method for producing the thin film device according to 1.
  6. 5. The energy density per pulse of the flash lamp light is 0.01 to 500 J / cm 2 when the predetermined light is the flash lamp light. 6. A method for producing the thin film device according to 1.
JP2013000620A 2013-01-07 2013-01-07 Thin film device manufacturing method Pending JP2014132621A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016048285A (en) * 2014-08-27 2016-04-07 株式会社ジャパンディスプレイ Display device

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JP2008175842A (en) * 2007-01-16 2008-07-31 Hitachi Displays Ltd Display device
JP2009111125A (en) * 2007-10-30 2009-05-21 Fujifilm Corp Oxide semiconductor element, its manufacturing method, thin film sensor and electro-optic device
JP2010123758A (en) * 2008-11-19 2010-06-03 Nec Corp Thin film device and method of manufacturing the same
JP2010147351A (en) * 2008-12-20 2010-07-01 Videocon Global Ltd Liquid crystal display device and manufacturing method therefor
JP2010191107A (en) * 2009-02-17 2010-09-02 Videocon Global Ltd Liquid crystal display device and method for manufacturing the same

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Publication number Priority date Publication date Assignee Title
JP2008175842A (en) * 2007-01-16 2008-07-31 Hitachi Displays Ltd Display device
JP2009111125A (en) * 2007-10-30 2009-05-21 Fujifilm Corp Oxide semiconductor element, its manufacturing method, thin film sensor and electro-optic device
JP2010123758A (en) * 2008-11-19 2010-06-03 Nec Corp Thin film device and method of manufacturing the same
JP2010147351A (en) * 2008-12-20 2010-07-01 Videocon Global Ltd Liquid crystal display device and manufacturing method therefor
JP2010191107A (en) * 2009-02-17 2010-09-02 Videocon Global Ltd Liquid crystal display device and method for manufacturing the same

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* Cited by examiner, † Cited by third party
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JP2016048285A (en) * 2014-08-27 2016-04-07 株式会社ジャパンディスプレイ Display device

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