JP2014150132A - Method and device of manufacturing organic semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and device of manufacturing an organic semiconductor device capable of patterning an organic conductive material with high accuracy.SOLUTION: A method of manufacturing an organic semiconductor device includes following steps of: forming a recessed structure having a hydrophilic surface (a reference surface) Sb having a hydrophilic property, and recessed parts H1 and H2 recessed from the reference surface and having a hydrophobic surface Sa; introducing a water-soluble organic conductive material M (S,D) into the recessed parts H1 and H2; and forming an organic semiconductor layer C electrically connected with the organic conductive material.

Description

  Aspects of the present invention relate to an organic semiconductor device manufacturing method and an apparatus for manufacturing the same.

  Conventional manufacturing techniques of organic semiconductor devices are described in, for example, Patent Document 1 and Patent Document 2. In these techniques, a specific process is performed on a flat substrate to pattern an organic conductive material. Moreover, in the technique described in Patent Document 3, a step of hydrophilizing the inside of the recess is used in order to increase the affinity with the organic material.

JP 2012-64662 A JP2011-259001A JP 2005-64409 A

  On the other hand, the inventors of the present application have studied the patterning of an organic conductive material using a hard mask. According to such research, it has been found that an organic conductive material used for a semiconductor device cannot be patterned with high accuracy in a specific region on a flat substrate because of its low viscosity. For example, when an organic conductive material is applied to an opening of a hard mask arranged on a planar substrate without using photolithography technology, the organic conductive material is not limited to the opening, and the organic conductive material is not between the lower surface of the hard mask and the substrate. I will sneak in. In this case, the organic conductive material remains not only in the opening but also in a region outside the opening. If high-precision patterning cannot be performed on an organic conductive material, it is difficult to form a high-precision semiconductor device (a transistor, a solar cell, an EL, or the like).

  This invention is made | formed in view of such a subject, and it aims at providing the manufacturing method and manufacturing apparatus of an organic-semiconductor device which can perform patterning of an organic conductive material with high precision.

  In order to solve the above-mentioned problems, the inventors of the present application have conducted intensive investigations. It has been found that patterning of the organic conductive material can be performed with high accuracy by making it hydrophobic.

  That is, the method for manufacturing an organic semiconductor device according to an aspect of the present invention includes a step of forming a concave structure having a hydrophilic reference surface and a concave portion that is recessed from the reference surface and has a hydrophobic surface; A step of introducing an organic conductive material, and a step of forming an organic semiconductor layer electrically connected to the organic conductive material.

  According to this manufacturing method, the organic conductive material can be patterned with high accuracy in the hydrophobic recess. Accordingly, carriers can be supplied from an accurate position to the organic semiconductor layer that is electrically connected to the organic conductive material, so that the operation accuracy of the organic semiconductor device can be improved.

  The method for manufacturing an organic semiconductor device according to an aspect of the present invention includes a step of spraying hot air on the organic conductive material located in the recess to temporarily dry the organic conductive material. The organic conductive material can maintain the patterning shape even during movement by blowing hot air once and temporarily drying it.

  The method for manufacturing an organic semiconductor device according to an aspect of the present invention further includes a step of heating and drying the organic conductive material at a temperature higher than that of the temporary drying step. After the temporary drying, the organic conductive material can be solidified more strongly by heating with a drying apparatus for main drying.

  The method for manufacturing an organic semiconductor device according to an aspect of the present invention further includes a step of attaching an insulating film to the organic semiconductor layer. According to such a manufacturing method, the insulating film can be attached to the organic semiconductor layer without being restricted by the manufacturing conditions of the insulating film, and deterioration of the organic semiconductor layer at the time of manufacturing the insulating film can be suppressed. Moreover, since high temperature processing is not included, the range of substrate material selection can be expanded.

  An organic semiconductor device manufacturing apparatus according to an aspect of the present invention includes a first chamber for forming a hydrophilic reference surface on a substrate surface, the substrate processed in the first chamber being transported, and etching the substrate surface And a second chamber for forming a recess having a hydrophobic surface, and an organic conductive material introducing device for transporting the substrate processed in the second chamber and introducing a water-soluble organic conductive material into the recess. And.

  According to this manufacturing apparatus, a hydrophobic recess can be formed and an organic conductive material can be introduced into the recess, so that the organic conductive material can be patterned with high accuracy. Accordingly, carriers can be supplied from an accurate position to the organic semiconductor layer that is electrically connected to the organic conductive material, so that the operation accuracy of the organic semiconductor device can be improved. The organic semiconductor layer can be manufactured using an existing apparatus.

  The apparatus for manufacturing an organic semiconductor device according to an aspect of the present invention further includes a temporary drying device that blows hot air on the substrate processed in the organic conductive material introducing device to temporarily dry the substrate. By providing the temporary drying device, the patterning shape of the organic conductive material can be maintained even when the substrate is moved.

  The organic semiconductor device manufacturing apparatus according to an aspect of the present invention is a drying apparatus in which the organic conductive material is heated and dried on the substrate processed in the temporary drying apparatus at a temperature higher than a heating temperature by the temporary drying apparatus. The apparatus further includes an apparatus. After the temporary drying, the organic conductive material can be solidified more strongly by heating with a drying apparatus for main drying.

  According to the method and apparatus for manufacturing an organic semiconductor device according to the present invention, the patterning of the organic conductive material can be performed with high accuracy.

It is a figure which shows the manufacturing apparatus of an organic-semiconductor device. It is a figure for demonstrating the manufacturing method of an organic-semiconductor device. It is a figure for demonstrating the manufacturing method of the gate insulating film and gate electrode in an organic-semiconductor device. It is a figure for demonstrating the manufacturing method of the organic-semiconductor device provided with the single organic transistor. It is a figure for demonstrating the manufacturing method of the organic-semiconductor device provided with the some organic transistor. It is a figure for demonstrating the effect which concerns on the manufacturing method of an organic-semiconductor device.

  Hereinafter, the organic semiconductor device and the manufacturing method thereof according to the embodiment will be described. In addition, the same code | symbol shall be used for the same element and the overlapping description is abbreviate | omitted.

  FIG. 1 is a diagram showing an organic semiconductor device manufacturing apparatus.

  The organic semiconductor device manufacturing apparatus 100 includes a first chamber 1, a second chamber 2, an organic conductive material introduction apparatus 3, a temporary drying apparatus 4 </ b> P, and a drying apparatus 4 that sequentially process the substrate 10. The substrate 10 that has been processed is taken out of the manufacturing apparatus 100 and transferred to an apparatus that performs the next processing. The details will be described below.

  First, the substrate 10 made of an organic material is introduced into the first chamber 1 from the outside of the manufacturing apparatus 100 by the transfer device indicated by the arrow C1. The substrate 10 before introduction is hydrophobic. The first chamber 1 is a hydrophilic surface forming apparatus, and performs a process of converting the surface characteristics of the introduced substrate 10 into hydrophilicity. The first chamber 1 of this example is a UV ozone device that generates ultraviolet rays and ozone by ultraviolet excitation. A hydrophilic treatment layer having an oxygen-rich functional group on the surface is formed on the substrate 10 by the UV ozone apparatus. The UV ozone device includes an ultraviolet light source, and irradiates the substrate with ultraviolet rays, and the ultraviolet rays act on oxygen in the chamber to generate ozone. This ozone also acts on the substrate surface together with the ultraviolet rays.

  In order to maintain airtightness in the first chamber 1, load locks L11 and L12 are provided at the inlet and the outlet of the substrate 10, respectively.

  Further, as a device capable of performing a hydrophilic treatment, a wet treatment device is known in addition to a device that performs a dry treatment such as a UV ozone device. When an organic substrate is used as the substrate 10 and the resin material constituting the substrate is made of PET (polyethylene terephthalate), a hydrophilic treatment including a functional group such as a hydroxy group, a carboxyl group, or a sulfo group is performed for wet processing. The conductive polymer may be brought into contact with the substrate surface.

  The substrate 10 that has been subjected to the hydrophilic treatment is transferred to the second chamber 2 by the transfer device indicated by the arrow C2. The second chamber 2 is an etching apparatus for removing a part of the hydrophilic treatment layer and forming a recess having a hydrophobic surface. In order to selectively leave the hydrophilic treatment layer, the substrate surface is covered with a hard mask. That is, during the transfer to the second chamber 2, a hard mask (not shown) in which a desired opening pattern is formed is fixed on the surface of the substrate 10. The hard mask is a mask made of a metal such as Fe, Ni, Al, Cu, or Cr, and the hard mask is fixed on the surface of the substrate 10 using a fixing device. As the fixing device, an appropriate adhesive tape can be used, but a holding device that holds the stacked hard mask and the substrate 10 together may be used.

  The second chamber 2 of this example is a dry etching apparatus (ion milling apparatus: Ar sputtering apparatus), and the hydrophilic treatment layer can be removed by causing inert Ar ions to collide perpendicularly with the substrate surface. . Ar ions are irradiated onto the substrate surface even after the hydrophilic treatment layer is removed. Therefore, a recess is formed on the substrate surface by collision (sputtering) of Ar ions. By this treatment, the base material of the hydrophobic substrate is exposed, and the surface in the recess becomes hydrophobic. In addition, the depth of a recessed part can be set to several dozen nm-several hundred nm.

  In order to maintain airtightness in the second chamber 2, load locks L21 and L22 are provided at the inlet and the outlet of the substrate 10, respectively. In order to generate Ar plasma in the second chamber 2, the inside of the chamber is set to a pressure lower than 1 atm.

  When the processing by the second chamber 2 is completed, the substrate 10 is transferred to the organic conductive material introducing device 3 by the transfer device indicated by the arrow C3. Note that the hard mask is removed during the transfer of the substrate. Since a recess is formed on the substrate surface, an organic conductive material is introduced into the recess. The organic conductive material introducing device 3 in this example is a printing device using a bar coating method. After applying a water-soluble organic conductive material to an appropriate position on the substrate surface, the bar is moved horizontally so as to sweep the organic conductive material on the substrate surface, and the organic conductive material is introduced into the recess. In this introduction step, the organic conductive material does not remain on the hydrophilic region, and the organic conductive material selectively remains in the hydrophobic recess.

  The water-soluble organic conductive material (PEDOT / PSS) in this example is a polythiophene-based conductive polymer that is a mixed material of PEDOT and PSS (mixing ratio = 1: 2.5 (mass ratio), and is a water-dispersed polythiophene. PEDOT is a conductive polymer made of poly (3,4-ethylenedioxythiophene), and PSS is polystyrene sulfonic acid (poly (4- (4- (ethylenedioxythiophene))). Since PEDOT / PSS is an aqueous solution, a conductive polymer film can be formed by a simple coating process. For example, “BAYTRON” from BAYER, Germany. ”(Registered trademark).

  A temporary drying device 4 </ b> P is attached to the organic conductive material introducing device 3. The temporary drying device 4P sprays hot air on the substrate 10 processed in the organic conductive material introducing device 3 to temporarily dry it. By providing the temporary drying device 4P, the patterning shape of the organic conductive material can be maintained even when the substrate 10 is moved. The temporary drying device 4P has a function of sending air heated by a heater to the substrate surface using a blower. The substrate temperature in the temporary drying step is set to 50 ° C. to 100 ° C., and the heating time is set to several seconds to several minutes. In this example, the temporary heating temperature is 80 ° C. and the heating time is 1 minute.

  After the temporary drying process, the substrate 10 is transferred to the drying device 4 by the transfer device indicated by the arrow C4. The drying device 4 heats the organic conductive material to the substrate 10 processed in the temporary drying device 4P at a temperature higher than the heating temperature by the temporary drying device 4P, and dries it. The drying device 4 of this example is a lamp heating device (infrared heating device), the substrate temperature in the drying process is set to 100 ° C. to 150 ° C., and the heating time is set to several minutes to several hours. After the temporary drying, the organic conductive material can be solidified more firmly by heating with the drying device 4 for main drying. In this example, the heating temperature is 150 ° C. and the heating time is 3 minutes.

The dried substrate 10 is transferred to the outside of the manufacturing apparatus 100 by the transfer device indicated by the arrow C5. Outside the manufacturing apparatus 100, a hydrophilic processing layer removing apparatus and an existing organic semiconductor layer film forming apparatus are arranged. The hydrophilic treatment layer removing device (Ar sputtering device) removes the hydrophilic treatment layer of the substrate 10. Further, the film forming apparatus forms the organic semiconductor layer so as to cover a part of the organic conductive material layer formed on the substrate 10. Pentacene is used as the organic semiconductor layer in this example. Pentacene can be deposited using a vacuum evaporation method. In this example, the pressure during vacuum deposition is set to 1 × 10 ⁻⁴ Pa and the deposition time is set to 15 minutes. Thereby, an organic semiconductor layer is formed on the organic conductive material, and these are electrically connected. At the time of forming the organic semiconductor layer, an appropriate hard mask is disposed on the substrate surface, and the organic semiconductor layer is patterned at the time of vapor deposition. As this hard mask, PET or the like can be used. Since the surface of the substrate 10 can be easily returned to hydrophobicity by removing the hydrophilic treatment layer, the affinity with the organic semiconductor layer is good and the adhesion between the layers can be increased.

In manufacturing an organic transistor using an organic conductive material as a source region (electrode) and a drain region (electrode), a gate insulating film and a gate electrode are stacked on the organic semiconductor layer. In this example, after a combined body in which a gate electrode is formed on a gate insulating film is manufactured, the gate insulating film is bonded to the surface of the organic semiconductor layer. As a gate insulating film, what coated acrylic acid ester (adhesive) (dielectric constant: 2.7-4.5) on the surface of a cellulose film can be used. The cellulose film of this example was subjected to a press treatment (pressure = 5 kN / cm ² ) at a temperature of 100 ° C. on a cellulose film (dielectric constant: 3.2 to 7.0) that was initially 50 μm before forming the gate electrode. , Reducing its thickness.

  The material of the gate electrode is the same as the organic conductive material in which the source region (electrode) and the drain region (electrode) are formed, and is made of PEDOT / PSS. The bar electrode method is used to form the gate electrode. That is, after fixing a hard mask on the gate insulating film, an organic conductive material is applied on the gate insulating film, and the bar is moved so as to sweep the organic conductive material. As a result, the organic conductive material remains in the opening of the hard mask and a gate electrode is formed. After application of the organic conductive material, the same temporary drying (80 ° C.) and main drying (150 ° C.) as described above are sequentially performed.

  As described above, in the manufacturing apparatus 100 described above, the first chamber 1 that forms a hydrophilic reference surface on the substrate surface and the substrate 10 processed in the first chamber 1 are transported to etch the substrate surface. Then, the second chamber 2 that forms a recess having a hydrophobic surface, and the organic conductive material introduction apparatus that transports the substrate 10 processed in the second chamber 2 and introduces a water-soluble organic conductive material into the recess. 3 is provided.

  According to this manufacturing apparatus 100, a hydrophobic recess can be formed and an organic conductive material can be introduced into the recess, so that the organic conductive material can be patterned with high accuracy. Accordingly, carriers can be supplied from an accurate position to the organic semiconductor layer that is electrically connected to the organic conductive material, so that the operation accuracy of the organic semiconductor device can be improved. The organic semiconductor layer can be manufactured using an existing apparatus. Further, according to this configuration, a high-precision organic semiconductor device using an organic conductive material can be manufactured at low cost without using an expensive apparatus such as a photolithography apparatus.

  Next, the manufacturing method of an organic semiconductor device is further demonstrated.

  FIG. 2 is a diagram for explaining a method of manufacturing an organic semiconductor device.

  First, an organic substrate S1 is prepared as the substrate 10 (FIG. 2A). The surface of the substrate S1 is a hydrophobic surface Sa. Next, the hydrophilic treatment is performed on the substrate S1 to form the hydrophilic treatment layer S2 on the substrate surface (FIG. 2B). The surface of the hydrophilic treatment layer S2 is a hydrophilic surface Sb. After that, the hard mask is fixed on the substrate surface, and then the substrate is etched to form the separated recesses H1 and H2 (FIG. 2C). While being the surface Sb, the inner surfaces of the recesses H1 and H2 become the hydrophobic surface Sa. In the figure, the hard mask is not shown.

  Next, the hard mask is removed, and the organic conductive material M is applied onto the substrate surface as described above, and the organic conductive material M is swept as indicated by an arrow A1 using the bar B1 (FIG. 2 ( D)), the organic conductive material M selectively remains in the recesses H1 and H2, and the source region (electrode) S and the drain region (electrode) D are formed (FIG. 2E). Note that the moving direction of the bar B1 is not limited to the direction of the arrow A1, and may be a direction perpendicular to the direction (a direction perpendicular to the paper surface).

  Next, as described above, hot air is blown onto the organic conductive material M (S, D) located in the recess to temporarily dry it. The organic conductive material is temporarily dried by blowing hot air once, so that the patterning shape can be maintained even when the substrate is moved. Thereafter, the organic conductive material (S, D) is heated and dried at a temperature higher than that of the temporary drying step. After the temporary drying, the organic conductive material can be solidified more strongly by heating with a drying apparatus for main drying.

  Further, as described above, the hydrophilic treatment layer S2 is removed by Ar sputtering or the like to expose the hydrophobic surface Sa (FIG. 2F). Next, an organic semiconductor layer C is formed on the exposed substrate surface by a vapor deposition method (FIG. 2G). By forming the organic semiconductor layer on the exposed hydrophobic surface, the adhesion between the layers can be enhanced. Further, a separately formed combined body of the gate insulating film GI and the gate electrode GE is attached onto the substrate surface, and the organic semiconductor layer C is covered with the gate insulating film GI to complete the organic transistor (FIG. 2). (H)). This manufacturing method further includes a step of bonding the gate insulating film GI to the organic semiconductor layer C. According to this manufacturing method, the (gate) insulating film GI can be attached to the organic semiconductor layer C without being restricted by the manufacturing conditions of the (gate) insulating film GI, and the deterioration of the organic semiconductor layer C at the time of manufacturing the gate insulating film is suppressed. can do. In addition, since it does not include a high temperature treatment such as a process for forming an insulating film, an organic material that is weak at high temperatures can be used as a substrate, and the range of substrate material selection can be expanded.

  FIG. 3 is a diagram for explaining a method of manufacturing a combined body including the gate insulating film GI and the gate electrode GE in the organic semiconductor device.

As described above, in manufacturing the combined body, first, a relatively thick initial gate insulating film GI ₀ is prepared (FIG. 3A). Next, this is subjected to a press process to reduce the thickness thereof, thereby forming a gate insulating film GI (FIG. 3B). Thereafter, the gate electrode GE is formed by patterning on the gate insulating film GI, thereby completing the combined body (FIG. 3C). An adhesive is applied to the back surface (the side opposite to the gate electrode) of the gate insulating film GI, and an organic transistor as an organic semiconductor device is completed by bonding the adhesive to the organic semiconductor layer. In addition, a solar cell, EL, etc. are also known as an organic semiconductor device.

  FIG. 4 is a diagram for explaining a method of manufacturing an organic semiconductor device including a single organic transistor. In the figure, a plan view at the time of manufacturing an organic transistor is shown.

  After forming the recesses H1 and H2 having a hydrophobic surface on the organic substrate S1 by the steps of FIGS. 2A to 2E, an organic conductive material is introduced into the recesses H1 and H2, and the source regions S and A drain region D is formed (FIG. 4A). Thereafter, the hydrophilic treatment layer is removed. In addition, the cross section which passes along the dashed-dotted line F in the same figure respond | corresponds to the state of FIG.2 (F), and a manufacturing method is also as FIG.2 (F). As the shapes of the recesses H1 and H2, the shapes of the source region S and the drain region D are L-shaped so that the output can be easily taken out from the electrodes.

  Next, as illustrated in FIG. 4B, the organic semiconductor layer C is formed so as to straddle the source region S and the drain region D. In addition, the cross section which passes along the dashed-dotted line G in the same figure respond | corresponds to the state of FIG.2 (G), and a manufacturing method is also as FIG.2 (G).

  Finally, as shown in FIG. 4C, a combined body of the gate insulating film GI and the gate electrode GE is stacked so as to cover the organic semiconductor layer C. The cross section passing through the alternate long and short dash line H in FIG. 2 corresponds to the state of FIG. 2H, and the manufacturing method is also as shown in FIG. 2H, but in this example, the length of the gate electrode GE is shown in FIG. Since it is set longer than that shown in 2 (H), the cross-sectional configuration is slightly different.

  FIG. 5 is a diagram for explaining a method of manufacturing an organic semiconductor device including a plurality of organic transistors.

  After forming a plurality of sets of concave portions H1 and H2 having a hydrophobic surface on the organic substrate S1 by the steps of FIGS. 2A to 2C, as shown in FIG. 5A, the concave portions H1 and H2 are formed. An organic conductive material is introduced therein to form a source region S and a drain region D. In the step of introducing the organic conductive material, the organic conductive material M is applied on the surface of the hydrophilic treatment layer S2 formed on the surface of the organic substrate S1, and the organic conductive material M is indicated by the arrow A1 using the bar B1. Sweep in the direction. This step corresponds to FIG. 2D, but is different from FIG. 2 only in the moving direction of the bar B1. Thereafter, the steps of FIGS. 2E to 2H are sequentially executed to complete an organic semiconductor device including a plurality of organic transistors (FIG. 5B). In this example, since a plurality of organic transistors having a common gate electrode are formed on the same substrate, when the organic semiconductor layer C is formed, the organic semiconductor layer C includes a plurality of sets of source regions S and A region between the drain regions D (a channel region giving a gate length) is covered. The gate insulating film GI covers a plurality of the channel regions, and similarly, the gate electrode GE also covers the plurality of the channel regions.

  Next, the state after introducing the organic conductive material into the recesses H1 and H2 will be described with reference to the observation region R in FIG.

  FIG. 6 is a diagram for explaining the effect of the method for manufacturing the organic semiconductor device. Steps up to step (F) in FIG. 2 were performed, and the patterning characteristics were inspected. PET is used as the organic substrate S1 (FIG. 2A), UV ozone treatment is used as the hydrophilic treatment (FIG. 2B), an Ni metal mask is used as a hard mask, and Ar is used as dry etching for forming a recess. Sputtering (sputtering conditions: AC plasma apparatus using parallel plate electrodes, gas pressure 20 Pa, discharge current 20 mA, 15 min.) (FIG. 2C), using the above PEDOT / PSS as the organic conductive material M, hydrophilic Ar sputtering (sputtering conditions: AC plasma apparatus using parallel plate electrodes, gas pressure 20 Pa, discharge current 20 mA, 30 sec.) Was used as dry etching for removing the property treatment layer.

  In Comparative Example 1 (FIGS. 6A1 and 6A2), a hard mask is disposed on the organic substrate S1, and an organic conductive material is applied by a bar coat method without any treatment, so that a source region is formed. This is an example in which S and the drain region D are patterned. In the first comparative example, the hard mask is designed so that the source region S and the drain region D are formed on the organic substrate S1 by being separated by the gate length Lg (FIG. 6 (A2)). In FIG. 6 (A2), the source region S and the drain region D show shapes at the time of design. Actually, the shape does not become the shape of FIG. 6 (A2). The region is not patterned. That is, the organic conductive material was widely dispersed as shown by the hatched portion, without being patterned so as to be within the desired dotted region (source region S, drain region D) in FIG.

  In Comparative Example 2 (FIGS. 6 (B1) and (B2)), a rough surface processing (specifically, the above-described Ar sputtering method is used for a desired region on the surface of the organic substrate S1, gas pressure 20 Pa, discharge current. 20 mA, 3 min.), A hard mask was placed, and otherwise, no organic treatment was applied to the organic conductive material by a bar coating method, and the source region S and the drain region D were patterned. It is an example. Also in Comparative Example 2, the hard mask is designed so that the source region S and the drain region D are formed on the organic substrate S1 with a separation by the gate length Lg (FIG. 6 (B2)). In FIG. 6 (B2), the source region S and the drain region D show the shapes at the time of design. Actually, the shape does not become the shape of FIG. 6 (B2), and these organic conductive materials have a desired shape. Patterning is performed so as to protrude slightly from the region. That is, the organic conductive material was dispersed as shown by the hatched portion without being patterned to fit within the desired dotted region (source region S, drain region D) in FIG. 6 (B1).

  In the embodiment shown in FIG. 5 (FIGS. 6 (C1) and 6 (C2)), the source region S and the drain region D are formed on the organic substrate S1 so as to be separated from each other by the gate length Lg. The shape of the concave portion having a conductive inner surface is designed (FIG. 6 (C2)). Therefore, as indicated by the hatched portion in FIG. 6 (C1), the organic matter is formed in the dotted line region (source region S, drain region D). The conductive material was patterned to fit.

  As described above, the organic semiconductor device manufacturing method described above includes a step of forming a concave structure having a hydrophilic surface (reference surface) Sb and concave portions H1 and H2 that are recessed from the reference surface and have a hydrophobic surface Sa. (FIGS. 2A to 2C), a step of introducing a water-soluble organic conductive material M into the recesses H1 and H2 (FIGS. 2D to 2F), and an organic conductive material M (S, D) and a step (FIG. 2G) of forming an organic semiconductor layer C that is electrically connected.

  According to the manufacturing method described above, the organic conductive material can be patterned with high accuracy in the hydrophobic recesses H1 and H2. Accordingly, carriers can be supplied from an accurate position to the organic semiconductor layer that is electrically connected to the organic conductive material, so that the operation accuracy of the organic semiconductor device can be improved.

  In the above example, PEDOT / PSS is used as the organic conductive material, but the viscosity is 1 to 100 mPa · sec. The above-described manufacturing method and manufacturing apparatus are particularly effective for patterning such low-viscosity organic conductive materials.

  Further, as a material for the organic substrate, COP (cycloolefin polymer) resin, PEN (polyethylene naphthalate), PI (polyimide), or the like can be used instead of PET.

  As the organic conductive material, oligothiophene, polypyrrole, or the like can be used instead of PEDOT / PSS.

  As a material for the organic semiconductor layer, dinaphthothienothiophene (DNTT), poly-3-hexylthiophene (P3HT), or the like can be used instead of pentacene.

  Further, as the insulating layer, another organic insulating film may be used instead of cellulose. For example, as an organic insulating film used as a gate insulating film, a mixture of a polymer material (polyvinylphenol: PVP) and a crosslinking agent (melamine resin, etc.) in an organic solvent (propylene glycol monomethyl ether acetate: PGMEA) is used. Also good.

  In addition to PVP (Poly (4-vinylphenol) (dielectric constant: 3.0 to 4.0)), an acrylic resin, cyanoethyl pullulan, or the like can be used.

  In addition to PGMEA (Propylene glycol monomethyl ether 2-acetate), ethanol (EtOH), methanol (MtOH), or the like can be used as the organic solvent.

  Moreover, poly (melamine-co-formaldehyde) methylate) etc. can be used as a melamine resin used for a crosslinking agent.

DESCRIPTION OF SYMBOLS 1 ... 1st chamber (hydrophilic surface formation apparatus), 2 ... 2nd chamber (etching apparatus), 3 ... Organic conductive material introduction apparatus, 4 ... Drying apparatus, 4P ... Temporary drying apparatus, 10 ... Substrate, S1 ... Organic substrate , S2 ... hydrophilic treatment layer, H1, H2 ... recess, S ... source region, D ... drain region, C ... organic semiconductor layer (channel layer), GI ... gate insulating film, GE ... gate electrode.

Claims (7)

Forming a concave structure having a hydrophilic reference surface and a concave portion recessed from the reference surface and having a hydrophobic surface;
Introducing a water-soluble organic conductive material into the recess;
Forming an organic semiconductor layer electrically connected to the organic conductive material;
The manufacturing method of the organic-semiconductor device characterized by the above-mentioned.   The method for producing an organic semiconductor device according to claim 1, further comprising a step of spraying hot air on the organic conductive material located in the recess and temporarily drying the material.   The method of manufacturing an organic semiconductor device according to claim 2, further comprising a step of heating and drying the organic conductive material at a temperature higher than that of the temporary drying step.   The method for manufacturing an organic semiconductor device according to claim 1, further comprising a step of attaching an insulating film to the organic semiconductor layer. In organic semiconductor device manufacturing equipment,
A first chamber for forming a hydrophilic reference surface on the substrate surface;
A second chamber in which the substrate processed in the first chamber is transported and the substrate surface is etched to form a recess having a hydrophobic surface;
An organic conductive material introducing device that transports the substrate processed in the second chamber and introduces a water-soluble organic conductive material into the recess;
An organic semiconductor device manufacturing apparatus comprising:   The organic semiconductor device manufacturing apparatus according to claim 5, further comprising a temporary drying device that blows hot air on the substrate processed in the organic conductive material introducing device to temporarily dry the substrate. 7. The drying apparatus according to claim 6, further comprising a drying device configured to heat and dry the organic conductive material on the substrate processed in the temporary drying device at a temperature higher than a heating temperature of the temporary drying device. Organic semiconductor device manufacturing equipment.

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