JP2014129559A5 - - Google Patents

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Publication number
JP2014129559A5
JP2014129559A5 JP2012286958A JP2012286958A JP2014129559A5 JP 2014129559 A5 JP2014129559 A5 JP 2014129559A5 JP 2012286958 A JP2012286958 A JP 2012286958A JP 2012286958 A JP2012286958 A JP 2012286958A JP 2014129559 A5 JP2014129559 A5 JP 2014129559A5
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JP
Japan
Prior art keywords
target
sputtering target
materials
backing plate
solder
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JP2012286958A
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Japanese (ja)
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JP2014129559A (en
JP6079228B2 (en
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Priority to JP2012286958A priority Critical patent/JP6079228B2/en
Priority claimed from JP2012286958A external-priority patent/JP6079228B2/en
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Publication of JP2014129559A5 publication Critical patent/JP2014129559A5/ja
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Claims (3)

多分割スパッタリングターゲットにおいて、隣り合ったターゲット材で形成される分割部の底部に沿って、ハンダ材が露出しないように、バッキングプレート表面からターゲット材表面の高さの１／１０以下の高さであるワイヤー状の保護材が設置されていることを特徴とする多分割スパッタリングターゲット。 In a multi- split sputtering target, at a height of 1/10 or less of the height of the target material surface from the backing plate surface so that the solder material is not exposed along the bottom of the divided portion formed by the adjacent target material. multi-segment sputtering target, characterized in that wire-like protective material is placed. 保護材が、融点３００℃以上の材料からなることを特徴とする請求項１記載の多分割スパッタリングターゲット。 The multi-sputtering target according to claim 1, wherein the protective material is made of a material having a melting point of 300 ° C. or higher. 複数のターゲット材を、ハンダ材を用いて単一のバッキングプレート上の所望の位置に接合する工程前または工程後に、隣り合ったターゲット材で形成される分割部の底部に、ハンダ材が露出しないようにワイヤー状の保護材をバッキングプレート上に設置することを特徴とする請求項１又は２に記載の多分割スパッタリングターゲットの製造方法。 Before or after the step of joining a plurality of target materials to a desired position on a single backing plate using solder materials, the solder materials are not exposed at the bottom of the divided portion formed by adjacent target materials. The method for producing a multi-split sputtering target according to claim 1, wherein the wire-shaped protective material is installed on the backing plate as described above.
JP2012286958A 2012-12-28 2012-12-28 Multi-sputtering target and method for manufacturing the same Active JP6079228B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012286958A JP6079228B2 (en) 2012-12-28 2012-12-28 Multi-sputtering target and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012286958A JP6079228B2 (en) 2012-12-28 2012-12-28 Multi-sputtering target and method for manufacturing the same

Publications (3)

Publication Number Publication Date
JP2014129559A JP2014129559A (en) 2014-07-10
JP2014129559A5 true JP2014129559A5 (en) 2015-11-05
JP6079228B2 JP6079228B2 (en) 2017-02-15

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ID=51408190

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JP2012286958A Active JP6079228B2 (en) 2012-12-28 2012-12-28 Multi-sputtering target and method for manufacturing the same

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JP (1) JP6079228B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6021861B2 (en) * 2014-08-06 2016-11-09 Ｊｘ金属株式会社 Sputtering target-backing plate assembly
JP6291551B2 (en) * 2016-10-04 2018-03-14 Ｊｘ金属株式会社 Sputtering target-backing plate assembly
JP7311290B2 (en) 2019-03-27 2023-07-19 Ｊｘ金属株式会社 Segmented sputtering target and manufacturing method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2939751B2 (en) * 1989-03-28 1999-08-25 株式会社高純度化学研究所 Split sputtering target
JPH10121232A (en) * 1996-10-14 1998-05-12 Mitsubishi Chem Corp Sputtering target
JP4427831B2 (en) * 1998-06-08 2010-03-10 東ソー株式会社 Sputtering target and manufacturing method thereof
JP5482020B2 (en) * 2008-09-25 2014-04-23 東ソー株式会社 Cylindrical sputtering target and manufacturing method thereof
KR101227607B1 (en) * 2010-11-08 2013-01-30 미쓰이 긴조꾸 고교 가부시키가이샤 Divided sputtering target and method for producing same
JP2013185160A (en) * 2012-03-06 2013-09-19 Jx Nippon Mining & Metals Corp Sputtering target
JP2014096493A (en) * 2012-11-09 2014-05-22 Idemitsu Kosan Co Ltd Target laminate for oxide semiconductor

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