JP2014116502A - Multilayer capacitor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a multilayer capacitor in which intrusion of an acidic liquid can be reduced, while maintaining adhesion of a terminal electrode and an element.SOLUTION: A multilayer capacitor 1 comprises: an element 2; first and second terminal electrodes 5, 6; and first and second internal electrodes 3, 4. The first and second internal electrodes 3, 4 have main electrodes 3a, 4a facing each other, and lead-out portions 3b, 4b led out from the main electrodes 3a, 4a to the end faces 2a, 2b or the side faces 2e, 2f of the element 2, and connected with corresponding internal electrodes, respectively. The first and second terminal electrodes 5, 6 have first baked electrode layers 5a, 6a, and second baked electrode layers 5b, 6b, respectively. The first baked electrode layers 5a, 6a have a content ratio of glass component lower than that of the second baked electrode layers 5b, 6b.

Description

  The present invention relates to a multilayer capacitor.

  As a conventional multilayer capacitor, for example, the one described in Patent Document 1 is known. The multilayer capacitor described in Patent Document 1 includes an element body, internal electrodes disposed in the element body, and terminal electrodes disposed at both ends of the element body and connected to the internal electrodes. In this multilayer capacitor, the terminal electrode is formed by baking a conductive paste.

JP 2010-129737 A

  In the configuration in which the terminal electrode is formed by baking the conductive paste as in the above-described multilayer capacitor, the terminal electrode may contain a large amount of glass component in order to ensure the adhesion between the terminal electrode and the element body. In this case, in the multilayer capacitor, the adhesion between the element body and the terminal electrode is improved, but the connectivity between the internal electrode and the terminal electrode may be reduced.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a multilayer capacitor capable of improving the adhesion of the terminal electrode while maintaining the connectivity between the terminal electrode and the internal electrode. .

  The multilayer capacitor according to the present invention extends so as to connect a pair of end faces, a pair of main faces facing each other, and a pair of main faces, and extends so as to connect between the pair of main faces. A pair of side surfaces, the dimension between the pair of main surfaces is smaller than the dimension between the pair of end surfaces, and the dimension between the pair of side surfaces, and located at both ends of the element body, The first and second terminal electrodes arranged continuously over at least one of the main surface, the end surface, and the side surface, and the corresponding terminal electrode among the first and second terminal electrodes are connected, and the pair of main surfaces are First and second internal electrodes disposed in the element body so as to face each other in opposite directions, and the first and second internal electrodes include a main electrode portion facing each other, and a main electrode portion It is pulled out to the end face or side face of the element body and connected to the corresponding terminal electrode. Each of the first and second terminal electrodes is disposed so as to cover at least the lead portion and is formed by baking a conductive paste, and at least the first baking electrode. And a second baked electrode layer formed by baking a conductive paste disposed on the layer and containing a glass component.

  In this multilayer capacitor, the first baking electrode layer may not contain a glass component or may contain a small amount of glass component. Thereby, in the multilayer capacitor, the metal content of the first baking electrode layer can be made relatively high, so that the connectivity between the first and second terminal electrodes and the first and second internal electrodes can be maintained. In the multilayer capacitor, since the second baking electrode layer contains a glass component, adhesion with the element body and the first baking electrode layer is ensured. Therefore, the adhesion between the first and second terminal electrodes can be improved.

  The first baking electrode layer is formed by baking a conductive paste containing a glass component, and the content ratio of the glass component of the first baking electrode layer is lower than the content ratio of the glass component of the second baking electrode layer. Is preferred. As described above, in the multilayer capacitor, the first baked electrode layer contains some glass components, whereby the adhesion between the first baked electrode layer and the second baked electrode layer can be further improved.

  In the multilayer capacitor, the dimension of the element body is smaller than the dimension between the pair of end surfaces and the dimension between the pair of side surfaces. In this way, it is configured as a so-called low-profile multilayer capacitor, and the first and second terminal electrodes are arranged on at least the main surface, so that they can be embedded in a circuit board or embedded in an LSI (Large Scale Integration). It becomes possible. In the structure in which the multilayer capacitor is embedded, the terminal electrode on the main surface and the via conductor are connected. In such a mounting structure, since the current loop distance of the terminal electrode is shortened, the equivalent series inductance (ESL) can be lowered.

  The first baked electrode layer is continuously arranged over the main surface of the element body and the end surface or side surface of the element body from which the lead portion is drawn, and the second baked electrode layer is an element on which the first baked electrode layer is arranged. You may arrange | position at the end surface side or side surface side of a body. With such a configuration, in the multilayer capacitor, since the first baking electrode layer is disposed on the main surface, the smoothness on the main surface side of the first and second terminal electrodes can be ensured. In the multilayer capacitor, since the second baking electrode layer is hardly disposed on the main surface of the element body, the thickness on the main surface side of the first and second terminal electrodes can be reduced.

  The first baked electrode layer is disposed on the end surface or the side surface of the element body from which the lead portion is drawn, and the second baked electrode layer is the end surface side of the element body on which the main surface of the element body and the first baked electrode layer are disposed. Or you may arrange | position continuously over the side surface side. With such a configuration, in the multilayer capacitor, since the first baking electrode layer is hardly disposed on the main surface of the element body, the thickness of the main surface side of the first and second terminal electrodes can be reduced. In the multilayer capacitor, since the second baking electrode layer having a relatively high glass component content ratio is disposed on the main surface of the element body, the main surface side of the first and second terminal electrodes (contact with the via conductor) In the portion), the adhesion between the first and second terminal electrodes and the element body can be secured.

  It is preferable that the drawer part is pulled out to the side surface. With such a configuration, in the multilayer capacitor, the distance between the lead portions of the first and second terminal electrodes can be reduced, so that the ESL can be reduced.

  The width of the pair of side surfaces of the first and second terminal electrodes arranged on the main surface in the facing direction is preferably larger than the distance between the first terminal electrode and the second terminal electrode. With such a configuration, in the multilayer capacitor, the area on the main surface side of the terminal electrode is increased, and therefore, the connection with the via conductor can be more reliably performed when the multilayer capacitor is mounted in the circuit board.

  The width in the opposing direction of the pair of end faces of the first and second terminal electrodes arranged on the main surface is preferably larger than the separation distance between the first terminal electrode and the second terminal electrode. With such a configuration, in the multilayer capacitor, the area on the main surface side of the terminal electrode is increased, and therefore, the connection with the via conductor can be more reliably performed when the multilayer capacitor is mounted in the circuit board.

  Of the first and second internal electrodes, the dimension between the internal electrode closest to one main surface and one main surface, and the internal closest to the other main surface of the first and second internal electrodes The dimension between the electrode and the other main surface is preferably substantially the same as the dimension between the inner electrode closest to one main surface and the inner electrode closest to the other main surface. With such a configuration, in the multilayer capacitor, both the outer layer thickness and the inner layer thickness can be increased, so that the capacitance can be increased while relaxing the stress.

  It is preferable that the plating layer is arrange | positioned on the 1st and 2nd baking electrode layer. With such a configuration, when the multilayer capacitor is mounted on a circuit board, the via conductor and the plating layer are connected, so that the connection strength between the via conductor and the terminal electrode can be ensured.

  At least one of the first and second baked electrode layers and the via conductor of the circuit board can be directly connected. According to such a configuration, it is not necessary to form a plating layer.

  The multilayer capacitor according to the present invention extends so as to connect a pair of end faces, a pair of main faces facing each other, and a pair of main faces, and extends so as to connect between the pair of main faces. An element body having a dimension between the pair of main faces smaller than a dimension between the pair of end faces and a dimension between the pair of side faces, and positioned at both ends of the element body. The first and second terminal electrodes arranged continuously across at least one of the main surface, the end surface and the side surface, and a pair of main surfaces connected to the corresponding terminal electrode among the first and second terminal electrodes First and second internal electrodes disposed in the element body so as to face each other in a direction opposite to each other, the first and second internal electrodes comprising a main electrode part facing each other, and a main electrode part Is pulled out from the end face or side of the element body and connected to the corresponding terminal electrode Each of the first and second terminal electrodes includes a first region disposed in a bonding region with the lead portion, a glass component, and the first and second terminal electrodes. And a second region disposed on the outer surface side.

  In this multilayer capacitor, the first region arranged in the junction region with the lead portion does not contain a glass component or may contain a small amount of glass component. Thereby, in the multilayer capacitor, the metal content in the first region can be made relatively high, so that the connectivity between the first and second terminal electrodes and the first and second internal electrodes can be maintained. Further, in the multilayer capacitor, the second region contains a glass component, so that the adhesion with the element body and the first region is ensured. Therefore, the adhesion between the first and second terminal electrodes can be improved.

  ADVANTAGE OF THE INVENTION According to this invention, the adhesiveness of a terminal electrode can be improved, maintaining the connectivity of a terminal electrode and an internal electrode.

1 is a perspective view showing a multilayer capacitor according to a first embodiment. It is a figure which shows the cross-sectional structure in the II-II line of the multilayer capacitor shown in FIG. It is a figure which shows the cross-sectional structure in the III-III line of the multilayer capacitor shown in FIG. FIG. 2 is an exploded perspective view of an element body of the multilayer capacitor shown in FIG. 1. It is a figure which shows the cross-sectional structure of the mounting structure of the multilayer capacitor shown in FIG. It is a figure which shows the cross-sectional structure of the modification of a multilayer capacitor. It is a figure which shows the cross-sectional structure of the mounting structure of the multilayer capacitor shown in FIG. It is a figure which shows the cross-sectional structure of the multilayer capacitor which concerns on 2nd Embodiment. It is a figure which shows the cross-sectional structure of the mounting structure of the multilayer capacitor shown in FIG. It is a figure which shows the cross-sectional structure of the multilayer capacitor which concerns on 3rd Embodiment. (A) is a figure which shows the cross-sectional structure in the aa line of the multilayer capacitor shown in FIG. 10, (b) is a figure which shows the cross-sectional structure in the bb line of the multilayer capacitor shown in FIG. FIG. 11 is an exploded perspective view of an element body of the multilayer capacitor illustrated in FIG. 10. It is a figure which shows the cross-sectional structure of the multilayer capacitor which concerns on 4th Embodiment. (A) is a figure which shows the cross-sectional structure in the aa line of the multilayer capacitor shown in FIG. 13, (b) is a figure which shows the cross-sectional structure in the bb line of the multilayer capacitor shown in FIG. FIG. 14 is an exploded perspective view of an element body of the multilayer capacitor illustrated in FIG. 13. It is a figure which shows the cross-sectional structure of the multilayer capacitor which concerns on 5th Embodiment. (A) is a figure which shows the cross-sectional structure in the aa line of the multilayer capacitor shown in FIG. 16, (b) is a figure which shows the cross-sectional structure in the bb line of the multilayer capacitor shown in FIG. It is a figure which shows the cross-sectional structure of the multilayer capacitor which concerns on 6th Embodiment. (A) is a figure which shows the cross-sectional structure in the aa line of the multilayer capacitor shown in FIG. 18, (b) is a figure which shows the cross-sectional structure in the bb line of the multilayer capacitor shown in FIG.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same or equivalent elements will be denoted by the same reference numerals, and redundant description will be omitted.

[First Embodiment]
FIG. 1 is a perspective view showing the multilayer capacitor in accordance with the first embodiment. FIG. 2 is a diagram showing a cross-sectional configuration of the multilayer capacitor shown in FIG. 1 taken along line II-II. 3 is a diagram showing a cross-sectional configuration of the multilayer capacitor shown in FIG. 1 taken along the line III-III. 4 is an exploded perspective view of an element body of the multilayer capacitor shown in FIG.

  As shown in FIG. 1, the multilayer capacitor 1 includes an element body 2 configured in a substantially rectangular parallelepiped shape, first and second internal electrodes 3 and 4 disposed in the element body 2, and both end portions of the element body 2. First and second terminal electrodes 5 and 6 arranged on the side. For example, the multilayer capacitor 1 has a length L set to about 0.4 mm to 1.6 mm, a width W set to about 0.2 mm to 0.8 mm, and a height H set to about 0.10 mm to 035 mm. Has been. The multilayer capacitor 1 is configured as a so-called low profile capacitor.

  The element body 2 extends so as to connect the pair of first and second end faces 2a, 2b facing the longitudinal direction of the element body 2 and parallel to each other, and the first and second end faces 2a, 2b and facing each other. A pair of first and second main surfaces 2c, 2d and a pair of first and second side surfaces 2e, 2f extending to connect the first and second main surfaces 2c, 2d and facing each other. . The element body 2 has a dimension between the first and second main faces 2c, 2d, a dimension between the first and second end faces 2a, 2b, and a dimension between the first and second side faces 2e, 2f. Smaller than.

  As shown in FIG. 4, the element body 2 is a laminate in which a plurality of rectangular plate-like dielectric layers 7 and a plurality of (here, three each) first and second internal electrodes 3 and 4 are laminated. It is structured as a body. The first internal electrode 3 and the second internal electrode 4 are arranged in the element body 2 in the stacking direction of the dielectric layers 7, that is, along the direction in which the first main surface 2c and the second main surface 2d of the element body 2 face each other. Are arranged one by one. The first internal electrode 3 and the second internal electrode 4 are disposed so as to face each other with at least one dielectric layer 7 interposed therebetween. In the actual multilayer capacitor 1, the plurality of dielectric layers 7 are integrated to such an extent that the boundary between them cannot be visually recognized.

  The first internal electrode 3 has a main electrode portion 3a and a lead portion 3b. The main electrode portion 3a is disposed opposite to the second internal electrode 4 (main electrode portion 4a). The main electrode portion 3a has a substantially rectangular shape. The lead portion 3b extends from the main electrode portion 3a to the first end surface 2a of the element body 2 on which the first terminal electrode 5 is disposed, and is exposed to the first end surface 2a to be exposed to the first terminal electrode 5 (first baking electrode layer 5a). ) And directly connected. Thereby, the 1st internal electrode 3 and the 1st terminal electrode 5 will be electrically connected. The lead portion 3b has the same width as the main electrode portion 3a. Thereby, the 1st internal electrode 3 is exhibiting the substantially rectangular shape as a whole.

  The second internal electrode 4 has a main electrode portion 4a and a lead portion 4b. The main electrode portion 4a is disposed to face the first internal electrode 3 (main electrode portion 3a). The main electrode portion 4a has a substantially rectangular shape. The lead portion 4b extends from the main electrode portion 4a to the second end face 2b of the element body 2 on which the second terminal electrode 6 is disposed, and is exposed to the second end face 2b to be exposed to the second terminal electrode 6 (first baking electrode layer 6a). ) And directly connected. Thereby, the 2nd internal electrode 4 and the 2nd terminal electrode 6 will be electrically connected. The lead portion 4b has the same width as the main electrode portion 4a. Thereby, the 2nd internal electrode 4 is exhibiting the substantially rectangular shape as a whole.

  As shown in FIG. 2, in the element body 2 of the multilayer capacitor 1, the first internal electrode 3 disposed at the uppermost portion (position closest to the first main surface 2c) and the lowermost portion (most at the second main surface 2d). The inner layer dimension between the first inner electrode 3 and the first inner electrode 3 disposed at a close position is “D1”. In the element body 2, the outer layer dimension between the uppermost layer (protective layer) of the dielectric layer 7 constituting the first main surface 2 c of the element body 2 and the first inner electrode 3 disposed at the uppermost part is set. “D2”. A portion having the outer layer dimension D2 in the element body 2 is formed by laminating a plurality of dielectric layers 7. The outer layer dimension between the lowermost layer of the dielectric layer 7 constituting the main surface 2d of the element body 2 and the first inner electrode 3 disposed at the lowermost part is defined as “D3”. A portion having the outer layer dimension D3 in the element body 2 is formed by laminating a plurality of dielectric layers 7.

In the element body 2 of the multilayer capacitor 1, the inner layer dimension D1, the outer layer dimension D2, and the outer layer dimension D3 satisfy the following relationship.
D1 ≒ D2, D3
That is, the inner layer dimension D1 is substantially equal to the outer layer dimensions D2 and D3, and the thickness of the inner layer is approximately equal to the thickness of the pair of outer layers sandwiching the inner layer dimension. Note that “substantially equivalent” here includes an error of about 5 μm, for example.

  The first terminal electrode 5 is disposed so as to cover the first end surface 2a, the second main surfaces 2c, 2d, and the first and second side surfaces 2e, 2f. The first terminal electrode 5 is continuously arranged over the first end surface 2a, the first and second main surfaces 2c, 2d, and the first and second side surfaces 2e, 2f. The first terminal electrode 5 includes a first baked electrode layer 5a, a second baked electrode layer 5b, and a plating layer 5c.

  The first baked electrode layer 5a includes the first end face 2a of the element body 2 from which the lead portion 3b of the internal electrode 3 is drawn, the first and second main faces 2c and 2d, and the first and second side faces 2e and 2f. And is arranged. The 1st baking electrode layer 5a arrange | positioned at 2nd main surface 2c, 2d and 1st and 2nd side surface 2e, 2f is extended to the 2nd end surface 2b side. The first baked electrode layer 5a contains a conductive paste containing a metal (for example, Cu, Ni, Ag, Pd, Au, or Pt), or a metal and a glass component (for example, borosilicate glass). The conductive paste is formed by applying the conductive paste to the element body 2 by, for example, a dip method, and baking the conductive paste at a predetermined temperature. The content ratio of the glass component of the first baking electrode layer 5a is, for example, 0 to 5%, preferably 1 to 5%.

  The second baked electrode layer 5b is disposed on the first baked electrode layer 5a. The second baked electrode layer 5b includes a position corresponding to the first end surface 2a of the element body 2, the first and second main surfaces 2c and 2d, and the first and second side surfaces on the first baked electrode layer 5a. It is arrange | positioned at the edge part of the position corresponding to 2e and 2f. The length dimension of the 2nd baking electrode layer 5b arrange | positioned at the 1st and 2nd main surface 2c, 2d and the 1st and 2nd side surface 2e, 2f is longer than the length dimension of the 1st baking electrode layer 5a. small.

  The second baking electrode layer 5b is formed by applying a conductive paste containing a metal and a glass component onto the first baking electrode layer 5a by, for example, a dip method, and baking the conductive paste at a predetermined temperature. . The content ratio of the glass component of the second baked electrode layer 5b is, for example, 5 to 10%. That is, the content ratio of the glass component of the first baking electrode layer 5a is lower than the content ratio of the glass component of the second baking electrode layer 5b.

  The plating layer 5c is disposed so as to cover the entire first baking electrode layer 5a and the second baking electrode layer 5b. The plating layer 5c has, for example, a single layer structure such as Cu plating, Ni plating, Sn plating, or a multilayer structure in which these are combined. The outermost layer is preferably Sn plating or Cu plating.

  The second terminal electrode 6 is disposed so as to cover the second end face 2b, the first and second main faces 2c, 2d, and the first and second side faces 2e, 2f. The second terminal electrode 6 is continuously arranged over the second end surface 2b, the first and second main surfaces 2c, 2d, and the first and second side surfaces 2e, 2f. The separation distance G between the first terminal electrode 5 and the second terminal electrode 6 shown in FIG. 2 is in the direction opposite to the first and second end faces 2a and 2b of the first and second terminal electrodes 5 and 6 shown in FIG. It is smaller than the length (width) H1 and the length (width) H2 of the first and second terminal electrodes 5, 6 shown in FIG. 3 in the opposing direction of the first and second side surfaces 2e, 2f.

  The second terminal electrode 6 includes a first baking electrode layer 6a, a second baking electrode layer 6b, and a plating layer 6c. The first baked electrode layer 6a includes the first end face 2b of the element body 2 from which the lead portion 4b of the internal electrode 4 is drawn, the first and second main faces 2c and 2d, and the first and second side faces 2e and 2f. And is arranged. The first and second main surfaces 2c and 2d and the first baked electrode layer 6a disposed on the first and second side surfaces 2e and 2f extend to the second end surface 2a side. The first baked electrode layer 6a is formed in the same manner as the first baked electrode layer 5a.

  The second baked electrode layer 6b is disposed on the first baked electrode layer 6a. The second baked electrode layer 6b includes a position corresponding to the first end surface 2b of the element body 2, the first and second main surfaces 2c, 2d, and the first and second side surfaces on the first baked electrode layer 6a. It is arrange | positioned at the edge part of the position corresponding to 2e and 2f. The length dimension of the 2nd baking electrode layer 6b arrange | positioned at the 1st and 2nd main surface 2c, 2d and the 1st and 2nd side surface 2e, 2f is larger than the length dimension of the 1st baking electrode layer 6a. small. The second baked electrode layer 6b is formed in the same manner as the first baked electrode layer 6b. The content ratio of the glass component of the 1st baking electrode layer 6a is lower than the content ratio of the glass component of the 2nd baking electrode layer 6b.

  The plating layer 6c is disposed so as to cover the entire first and second baking electrode layers 6a and 6b. The plating layer 6c has, for example, a single layer structure such as Cu plating, Ni plating, Sn plating, or a multilayer structure in which these are combined.

  FIG. 5 is a diagram showing a cross-sectional configuration of the multilayer capacitor mounting structure shown in FIG. As shown in FIG. 5, the multilayer capacitor 1 is embedded and mounted in a substrate (circuit board) 10. The substrate 10 is configured by laminating a plurality of insulating resin sheets 11. The multilayer capacitor 1 is electrically connected to electrodes 13 and 14 formed on the surface of the substrate 10 and via conductors 15 and 16.

  In the mounting structure of the multilayer capacitor 1, after the multilayer capacitor 1 is embedded in the substrate 10, a via hole H is formed by a laser, and via conductors 15 and 16 are formed in the via hole H by electroless plating. In the multilayer capacitor 1 mounting structure, after the via conductors 15 and 16 are formed, electrodes 13 and 14 are formed on the substrate 10 so as to be physically and electrically connected to the via conductors 15 and 16.

  A via conductor 15 is physically and electrically connected to the first terminal electrode 5. At this time, since the first terminal electrode 5 is disposed on the main surface 2c of the element body 2, the first terminal electrode 5 and the via conductor 15 can be reliably connected. Thereby, the 1st terminal electrode 5 and the electrode 13 are electrically connected. A via conductor 16 is physically and electrically connected to the second terminal electrode 6. At this time, since the second terminal electrode 6 is disposed on the main surface 2c of the element body 2, the connection between the second terminal electrode 6 and the via conductor 16 can be reliably performed. Thereby, the 2nd terminal electrode 6 and the electrode 14 are electrically connected.

  As described above, in the multilayer capacitor 1 of the present embodiment, the glass component content ratio of the first baking electrode layers 5a and 6a is lower than the glass component content ratio of the second baking electrode layers 5b and 6b. Thereby, in the multilayer capacitor 1, since the metal content ratio of the first baking electrode layers 5a and 5b is relatively high, the first and second terminal electrodes 5 and 6 and the first and second internal electrodes 3 and 4 Connectivity can be maintained. Further, in the multilayer capacitor 1, since the glass component content ratio of the second baking electrode layers 5b and 6b is relatively high, adhesion with the element body 2 and the first baking electrode layers 5a and 6a is ensured. Therefore, the adhesion between the first and second terminal electrodes 5 and 6 can be improved.

  In the multilayer capacitor 1 of the present embodiment, the first baked electrode layers 5a and 6a include the first and second end surfaces 2a and 2b, the first and second main surfaces 2c and 2d, and the first and second The second baked electrode layers 5b and 6b are disposed on the edge portions of the element body 2 on the first and second end surfaces 2a and 2b side. With such a configuration, in the multilayer capacitor 1, the first baking electrode layers 5 a and 5 b are disposed on the first and second main surfaces 2 c and 2 d, so that the first and second terminal electrodes 5 and 6 have the first and second terminal electrodes 5 and 6. Smoothness on the second main surfaces 2c and 2d side can be ensured. In the multilayer capacitor 1, since the second baking electrode layers 5 b and 6 b are hardly arranged on the first and second main surfaces 2 c and 2 d of the element body 2, the first and second terminal electrodes 5 and 6 have the first and second terminal electrodes 5 and 6. The thickness on the second main surface 2c, 2d side can be reduced.

  In the multilayer capacitor 1 of the present embodiment, the widths H1 and H2 of the first and second terminal electrodes 5 and 6 disposed on the first and second main surfaces 2c and 2d are the first terminal electrode 5 and the second terminal electrode. 6 is larger than the separation distance G. Thereby, in the multilayer capacitor 1, the area of the 1st and 2nd terminal electrodes 5 and 6 is ensured. Therefore, when the multilayer capacitor 1 is mounted on the substrate 10, the contact area with the via conductors 15 and 16 can be increased, so that the connection with the via conductors 15 and 16 can be more reliably performed.

  In the multilayer capacitor 1 of the present embodiment, the relationship of D1≈D2, D3 is satisfied. Thereby, in the multilayer capacitor 1, since the thickness between the first internal electrode 3 and the first and second main surfaces 2c, 2d is relatively large, this thickness portion functions as a protective layer, and the multilayer capacitor 1 can suppress structural defects. Further, in the multilayer capacitor 1 having this configuration, a capacitance can be ensured.

  In the above embodiment, the configuration in which the first terminal electrode 5 and the second terminal electrode 6 have the plating layers 5c and 6c has been described as an example, but the plating layers 5c and 6c may not be provided. FIG. 6 is a diagram illustrating a cross-sectional configuration of a modified example of the multilayer capacitor. As shown in FIG. 6, the multilayer capacitor 1A includes an element body 2, first and second internal electrodes 3 and 4, and first and second terminal electrodes 5A and 6A.

  The first terminal electrode 5A has a first baked electrode layer 5Aa and a second baked electrode layer 5Ab. The second terminal electrode 6A has a first baked electrode layer 6Aa and a second baked electrode layer 6Ab.

  FIG. 7 is a diagram showing a cross-sectional configuration of the multilayer capacitor mounting structure. As shown in FIG. 7, the via conductor 15 is physically and electrically directly connected to the first baked electrode layer 5Aa of the first terminal electrode 5A. At this time, since the content ratio of the glass component is relatively low (the metal content is large), the first baked electrode layer 5Aa is reliably connected to the via conductor 15 by plating or the like. Via conductors 16 are physically and electrically directly connected to the first baked electrode layer 6Aa of the second terminal electrode 6A. At this time, since the content ratio of the glass component is relatively low, the first baking electrode layer 6Aa is reliably connected to the via conductor 16 by plating or the like. Accordingly, the second terminal electrode 6A and the electrode 14 are electrically connected.

[Second Embodiment]
Next, the second embodiment will be described. FIG. 8 is a diagram illustrating a cross-sectional configuration of the multilayer capacitor in accordance with the second embodiment. As shown in FIG. 8, the multilayer capacitor 20 includes an element body 2 configured in a substantially rectangular parallelepiped shape, first and second internal electrodes 3 and 4 disposed in the element body 2, and both end portions of the element body 2. 1 and 2nd terminal electrodes 21 and 22 arranged at the side.

  The first terminal electrode 21 includes a first baking electrode layer 21a, a second baking electrode layer 21b, and a plating layer 21c. The first baked electrode layer 21a includes the first end surface 2a from which the lead portion 3b of the first internal electrode 3 is drawn, the edges of the first and second main surfaces 2c and 2d, and the first and second side surfaces 2e and 2f. It arrange | positions so that a part may be covered. The first baked electrode layer 21a is continuously arranged over the first end surface 2a, the first and second main surfaces 2c, 2d, and the first and second side surfaces 2e, 2f.

  For the first baking electrode layer 21a, a conductive paste containing a metal or a conductive paste containing a metal and a glass component is applied to the element body 2 by, for example, a dipping method, and the conductive paste is baked at a predetermined temperature. Is formed. The content ratio of the glass component of the first baking electrode layer 21a is, for example, 0 to 5%, preferably 1 to 5%.

  The second baked electrode layer 21b is disposed on the first baked electrode layer 21a, and on the first and second main surfaces 2c and 2d and the first and second side surfaces 2e and 2f of the element body 2. Is arranged. The second baked electrode layer 21b covers the first baked electrode layer 21a and extends to the second end surface 2b side in the second main surfaces 2c and 2d and the first and second side surfaces 2e and 2f. . The length dimension of the 2nd baking electrode layer 21b arrange | positioned at the 1st and 2nd main surface 2c, 2d and the 1st and 2nd side surface 2e, 2f is larger than the length dimension of the 1st baking electrode layer 21a. large.

  The second baked electrode layer 21b is formed of a conductive paste containing a metal and a glass component, for example, on the first baked electrode layer 21a and the first and second main surfaces 2c, 2d of the element body 2 by the dipping method. The conductive paste is applied onto the first and second side surfaces 2e and 2f, and the conductive paste is baked at a predetermined temperature. The content ratio of the glass component of the second baked electrode layer 21b is, for example, 5 to 10%. That is, the content ratio of the glass component of the first baked electrode layer 21a is lower than the content ratio of the glass component of the second baked electrode layer 21b.

  The plating layer 21c is disposed so as to cover the entire second baking electrode layer 21b. The plating layer 21c has, for example, a single layer structure such as Cu plating, Ni plating, Sn plating, or a multilayer structure in which these are combined.

  The second terminal electrode 22 includes a first baked electrode layer 22a, a second baked electrode layer 22b, and a plating layer 22c. The first baked electrode layer 22a includes the first end face 2b from which the lead portion 4b of the second internal electrode 4 is drawn, the edges of the first and second main faces 2c and 2d, and the first and second side faces 2e and 2f. It arrange | positions so that a part may be covered. The first baked electrode layer 22a is formed in the same manner as the first baked electrode layer 22b.

  The second baked electrode layer 22b is disposed on the first baked electrode layer 21a, and on the first and second main surfaces 2c and 2d and the first and second side surfaces 2e and 2f of the element body 2. Is arranged. The second baked electrode layer 22b covers the first baked electrode layer 22a, and extends to the first end surface 2a side in the second main surfaces 2c and 2d and the first and second side surfaces 2e and 2f. . The length dimension of the 2nd baking electrode layer 22b arrange | positioned at the 1st and 2nd main surface 2c, 2d and the 1st and 2nd side surface 2e, 2f is larger than the length dimension of the 1st baking electrode layer 22a. large. The second baked electrode layer 22b is formed in the same manner as the second baked electrode layer 21b. The content ratio of the glass component of the first baked electrode layer 22a is lower than the content ratio of the glass component of the second baked electrode layer 22b.

  The plating layer 22c is disposed so as to cover the entire second baking electrode layer 22b. The plating layer 21c has, for example, a single layer structure such as Cu plating, Ni plating, Sn plating, or a multilayer structure in which these are combined.

  FIG. 9 is a diagram showing a cross-sectional configuration of the multilayer capacitor mounting structure shown in FIG. As shown in FIG. 9, the multilayer capacitor 20 is embedded and mounted in the substrate 10. A via conductor 15 is physically and electrically connected to the first terminal electrode 21. At this time, since the first terminal electrode 21 is disposed on the main surface 2c of the element body 2, the first terminal electrode 21 and the via conductor 15 can be reliably connected. Thereby, the 1st terminal electrode 21 and the electrode 13 are electrically connected. The via conductor 16 is physically and electrically connected to the second terminal electrode 22. At this time, since the second terminal electrode 22 is disposed on the main surface 2c of the element body 2, the connection between the second terminal electrode 22 and the via conductor 16 can be reliably performed. Thereby, the 2nd terminal electrode 22 and the electrode 14 are electrically connected.

  In the multilayer capacitor 20 of the present embodiment, the first baked electrode layers 21a and 22a are arranged at the edge portions of the element body 2 on the first and second end faces 2a and 2b side, and the second baked electrode layers 21b and 22b. Are disposed on the first baked electrode layers 21a and 22a, the first and second main surfaces 2c and 2d, and the first and second side surfaces 2e and 2f. Thus, in the multilayer capacitor 20, the first baking electrode layers 21 a and 22 a are hardly arranged on the first and second main surfaces 2 c and 2 d of the element body 2, so that the first and second terminal electrodes 21 and 22 have the first The thickness on the first and second main surfaces 2c, 2d side can be reduced. Further, in the multilayer capacitor 20, since the second baking electrode layers 21b and 22b having a relatively high glass component content ratio are disposed on the first and second main surfaces 2c and 2d of the element body 2, the first and second Adhesion between the first and second terminal electrodes 21 and 22 and the element body 2 can be ensured on the first and second main surfaces 2c and 2d side of the terminal electrodes 21 and 22 (contact portions with the via conductors 15 and 16). .

[Third Embodiment]
Subsequently, the third embodiment will be described. FIG. 10 is a diagram illustrating a cross-sectional configuration of the multilayer capacitor in accordance with the third embodiment. 11A is a diagram showing a cross-sectional configuration of the multilayer capacitor shown in FIG. 10 taken along line aa, and FIG. 11B is a cross-sectional configuration of the multilayer capacitor shown in FIG. 10 taken along line bb. FIG. 12 is an exploded perspective view of the multilayer capacitor body shown in FIG.

  As shown in FIG. 10, the multilayer capacitor 30 includes an element body 2 configured in a substantially rectangular parallelepiped shape, first and second internal electrodes 33 and 34 disposed in the element body 2, and both end portions of the element body 2. And first and second terminal electrodes 31 and 32 arranged on the side.

  As shown in FIG. 12, the first internal electrode 33 has a main electrode portion 33a and a lead portion 33b. The main electrode portion 33a is disposed to face the second internal electrode 34 (main electrode portion 34a). The main electrode portion 33a has a substantially rectangular shape. The lead portion 33b extends from the main electrode portion 33a to the first and second side surfaces 2e and 2f of the element body 2 on which the first terminal electrode 31 is disposed, and is exposed to the first and second side surfaces 2e and 2f. It is directly connected to the first terminal electrode 31 (first baking electrode layer 31a). Thereby, the 1st internal electrode 33 and the 1st terminal electrode 31 will be electrically connected.

  The second internal electrode 34 has a main electrode part 34a and a lead part 34b. The main electrode portion 34a is disposed to face the first internal electrode 33 (main electrode portion 33a). The main electrode portion 34a has a substantially rectangular shape. The lead portion 34b extends from the main electrode portion 34a to the first and second side surfaces 2e and 2f of the element body 2 in which the second terminal electrode 32 is disposed, and is exposed to the first and second side surfaces 2e and 2f. It is directly connected to the second terminal electrode 32 (first baking electrode layer 32a). Thereby, the 2nd internal electrode 34 and the 2nd terminal electrode 32 will be electrically connected.

  As shown in FIGS. 10 and 11, the first terminal electrode 31 is disposed so as to cover the first end surface 2a, the first and second main surfaces 2c, 2d, and the first and second side surfaces 2e, 2f. ing. The first terminal electrode 31 is continuously arranged over the first end surface 2a, the first and second main surfaces 2c, 2d, and the first and second side surfaces 2e, 2f. The first terminal electrode 31 includes a first baked electrode layer 31a, a second baked electrode layer 31b, and a plating layer 31c.

  The first baked electrode layer 31a includes first and second side faces 2e from which the first end face 2a of the element body 2, the first and second main faces 2c and 2d, and the lead-out portion 33b of the first internal electrode 33 are drawn out. , 2f. The first and second main surfaces 2c and 2d and the first baked electrode layer 31a disposed on the first and second side surfaces 2e and 2f extend to the second end surface 2b side. The first baking electrode layer 31a is formed by applying a conductive paste containing a metal or a conductive paste containing a metal and a glass component to the element body 2 by, for example, a dipping method, and baking the conductive paste at a predetermined temperature. Is formed. The content ratio of the glass component of the first baked electrode layer 31a is, for example, 0 to 5%, preferably 1 to 5%.

  The second baked electrode layer 31b is disposed on the first baked electrode layer 31a. The second baked electrode layer 31b is disposed on the first baked electrode layer 31a at positions corresponding to the first and second side surfaces 2e and 2f of the element body 2. The second baked electrode layer 31b may straddle the edge of the first main surface 2c and the edge of the second main surface 2d of the element body 2.

  The second baked electrode layer 31b is formed by applying a conductive paste containing a metal and a glass component onto the first baked electrode layer 31a by transfer, for example, and baking the conductive paste at a predetermined temperature. The content ratio of the glass component of the second baking electrode layer 31b is, for example, 5 to 10%. That is, the content ratio of the glass component of the first baking electrode layer 31a is lower than the content ratio of the glass component of the second baking electrode layer 31b.

  The plating layer 31c is disposed so as to cover the entire first baking electrode layer 31a and the second baking electrode layer 31b. The plating layer 31c has, for example, a single layer structure such as Cu plating, Ni plating, or Sn plating, or a multilayer structure combining these.

  The second terminal electrode 32 is disposed so as to cover the second end face 2b, the first and second main faces 2c, 2d, and the first and second side faces 2e, 2f. The second terminal electrode 32 is continuously arranged over the second end face 2b, the first and second main faces 2c, 2d, and the first and second side faces 2e, 2f. The second terminal electrode 32 includes a first baked electrode layer 32a, a second baked electrode layer 32b, and a plating layer 32c.

  The first baked electrode layer 32a includes first and second side faces 2e from which the second end face 2b of the element body 2, the first and second main faces 2c and 2d, and the lead-out portion 34b of the second internal electrode 34 are drawn out. , 2f. The 1st and 2nd main surfaces 2c and 2d and the 1st baking electrode layer 32a arrange | positioned at the 1st and 2nd side surfaces 2e and 2f are extended to the 1st end surface 2a side. The first baked electrode layer 32a is formed in the same manner as the first baked electrode layer 31a.

  The second baked electrode layer 32b is disposed on the first baked electrode layer 32a. The second baked electrode layer 32b is disposed on the first baked electrode layer 32a at positions corresponding to the first and second side surfaces 2e and 2f of the element body 2. The second baked electrode layer 31b may straddle the edge of the first main surface 2c and the edge of the second main surface 2d of the element body 2. The second baked electrode layer 32b is formed in the same manner as the second baked electrode layer 31b. The glass component content ratio of the first baked electrode layer 32a is lower than the glass component content ratio of the second baked electrode layer 32b.

  The plating layer 32c is disposed so as to cover the entire first baking electrode layer 32a and the second baking electrode layer 32b. The plating layer 32c has, for example, a single layer structure such as Cu plating, Ni plating, or Sn plating, or a multilayer structure combining these.

  As described above, in the multilayer capacitor 30 according to this embodiment, the lead portions 33b and 34b of the first and second internal electrodes 33 and 34 are drawn to the first and second side surfaces 2e and 2f of the element body 2. Yes. Thereby, in the multilayer capacitor 30, since the distance between the lead-out part 33b and the lead-out part 34b can be reduced, the ESL can be reduced.

  In the multilayer capacitor 30, the first and second terminal electrodes 31 and 32 include the first and second end faces 2 a and 2 b, the first and second main faces 2 c and 2 d, and the first and second end faces of the element body 2. Although arranged so as to cover the side surfaces 2e and 2f, the terminal electrode may not be formed on the first and second end surfaces 2a and 2b, or one of the first and second main surfaces 2c and 2d. It may be formed only on one main surface. In this case, the terminal electrode may be formed by, for example, a printing method.

[Fourth Embodiment]
Subsequently, a fourth embodiment will be described. FIG. 13 is a diagram illustrating a cross-sectional configuration of the multilayer capacitor in accordance with the fourth embodiment. 14A is a diagram showing a cross-sectional configuration of the multilayer capacitor shown in FIG. 13 taken along line aa, and FIG. 14B is a cross-sectional configuration of the multilayer capacitor shown in FIG. 13 taken along line bb. FIG. 15 is an exploded perspective view of the multilayer capacitor body shown in FIG.

  As shown in FIG. 13, the multilayer capacitor 40 includes an element body 2 configured in a substantially rectangular parallelepiped shape, first and second internal electrodes 43 and 44 disposed in the element body 2, and both end portions of the element body 2. First and second terminal electrodes 41 and 42 disposed on the side.

  As shown in FIG. 15, the first internal electrode 43 includes a main electrode portion 43a and a lead portion 43b. The main electrode portion 43a is disposed to face the second internal electrode 44 (main electrode portion 44a). The main electrode portion 43a has a substantially rectangular shape. The lead portion 43b extends from the main electrode portion 43a to the second side surface 2f of the element body 2 on which the first terminal electrode 41 is disposed, and is exposed to the second side surface 2f to be exposed to the first terminal electrode 41 (first printed electrode layer 41a). ) And directly connected. Thereby, the 1st internal electrode 43 and the 1st terminal electrode 41 will be electrically connected.

  The second internal electrode 44 has a main electrode portion 44a and a lead portion 44b. The main electrode portion 44a is disposed to face the first internal electrode 43 (main electrode portion 43a). The main electrode portion 44a has a substantially rectangular shape. The lead portion 44b extends from the main electrode portion 44a to the second side surface 2f of the element body 2 on which the second terminal electrode 42 is disposed, and is exposed to the second side surface 2f to expose the second terminal electrode 42 (first baking electrode layer 42a). ) And directly connected. Thereby, the 2nd internal electrode 44 and the 2nd terminal electrode 42 will be electrically connected.

  As shown in FIGS. 13 and 14, the first terminal electrode 41 is disposed so as to cover the first end face 2a, the first and second main faces 2c, 2d, and the first and second side faces 2e, 2f. ing. The first terminal electrode 41 is continuously arranged over the first end surface 2a, the first and second main surfaces 2c, 2d, and the first and second side surfaces 2e, 2f. The first terminal electrode 41 includes a first baking electrode layer 41a, a second baking electrode layer 41b, and a plating layer 41c.

  The first baked electrode layer 41a is disposed on the first end face 2a of the element body 2, the first and second main faces 2c, 2d, and the first and second side faces 2e, 2f. The first and second main surfaces 2c and 2d and the first baked electrode layer 41a disposed on the first and second side surfaces 2e and 2f extend to the second end surface 2b side. For the first baking electrode layer 41a, a conductive paste containing a metal or a conductive paste containing a metal and a glass component is applied to the element body 2 by, for example, a dipping method, and the conductive paste is baked at a predetermined temperature. Is formed. The content ratio of the glass component of the first baking electrode layer 41a is, for example, 0 to 5%, preferably 1 to 5%.

  The second baked electrode layer 41b is disposed on the first baked electrode layer 41a. The second baked electrode layer 41b is disposed at a position corresponding to the second side surface 2f of the element body 2 on the first baked electrode layer 41a.

  The second baked electrode layer 41b is formed by applying a conductive paste containing a metal and a glass component onto the first baked electrode layer 41a by transfer, for example, and baking the conductive paste at a predetermined temperature. The glass content ratio of the second baked electrode layer 41b is, for example, 5 to 10%. That is, the content ratio of the glass component of the first baking electrode layer 41a is lower than the content ratio of the glass component of the second baking electrode layer 41b.

  The plating layer 41c is disposed so as to cover the entire first baking electrode layer 41a and the second baking electrode layer 41b. The plating layer 41c has, for example, a single layer structure such as Cu plating, Ni plating, or Sn plating, or a multilayer structure combining these.

  The second terminal electrode 42 is disposed so as to cover the second end face 2b, the first and second main faces 2c, 2d, and the first and second side faces 2e, 2f. The second terminal electrode 42 is continuously arranged over the second end surface 2b, the first and second main surfaces 2c, 2d, and the first and second side surfaces 2e, 2f. The second terminal electrode 42 includes a first baked electrode layer 42a, a second baked electrode layer 42b, and a plating layer 42c.

  The first baking electrode layer 42a is disposed on the second end surface 2b of the element body 2, the first and second main surfaces 2c and 2d, and the first and second side surfaces 2e and 2f. The first and second main surfaces 2c and 2d and the first baked electrode layers 42a disposed on the first and second side surfaces 2e and 2f extend to the first end surface 2a side. The first baked electrode layer 42a is formed in the same manner as the first baked electrode layer 41a.

  The second baked electrode layer 42b is disposed on the first baked electrode layer 42a. The second baked electrode layer 42b is disposed at a position corresponding to the second side surface 2f of the element body 2 on the first baked electrode layer 41a. The second baked electrode layer 42b is formed in the same manner as the second baked electrode layer 41b. The content ratio of the glass component of the first baked electrode layer 42a is lower than the content ratio of the glass component of the second baked electrode layer 42b.

  The plating layer 42c is disposed so as to cover the entire first baking electrode layer 42a and the second baking electrode layer 42b. The plating layer 42c has, for example, a single layer structure such as Cu plating, Ni plating, Sn plating, or a multilayer structure in which these are combined.

  As described above, in the multilayer capacitor 40 according to this embodiment, the lead portions 43 b and 44 b of the first and second internal electrodes 43 and 44 are drawn to the second side surface 2 f of the element body 2. Thereby, in the multilayer capacitor 30, since the distance between the lead part 43b and the lead part 44b can be reduced, the ESL can be reduced.

  In the multilayer capacitor 40, the first and second terminal electrodes 41 and 42 include the first and second end faces 2 a and 2 b, the first and second main faces 2 c and 2 d, and the first and second end faces of the element body 2. Although arranged so as to cover the side surfaces 2e and 2f, the terminal electrode may not be formed on the first and second end surfaces 2a and 2b, or one of the first and second main surfaces 2c and 2d. It may be formed only on one main surface. In this case, the terminal electrode may be formed by, for example, a printing method.

[Fifth Embodiment]
Subsequently, a fifth embodiment will be described. FIG. 16 is a diagram illustrating a cross-sectional configuration of the multilayer capacitor in accordance with the fifth embodiment. 17A is a diagram showing a cross-sectional configuration of the multilayer capacitor shown in FIG. 16 taken along line aa, and FIG. 17B is a cross-sectional configuration of the multilayer capacitor shown in FIG. 16 taken along line bb. FIG.

  As shown in FIG. 16, the multilayer capacitor 50 includes an element body 2 configured in a substantially rectangular parallelepiped shape, first and second internal electrodes 33 and 34 disposed in the element body 2, and both end portions of the element body 2. First and second terminal electrodes 51 and 52 arranged on the side.

  As shown in FIGS. 16 and 17, the first terminal electrode 51 is disposed so as to cover the first end surface 2a, the first and second main surfaces 2c, 2d, and the first and second side surfaces 2e, 2f. ing. The first terminal electrode 51 is continuously arranged over the first end surface 2a, the first and second main surfaces 2c, 2d, and the first and second side surfaces 2e, 2f. The first terminal electrode 51 includes a first baking electrode layer 51a, a second baking electrode layer 51b, and a plating layer 51c.

  The first baked electrode layer 51a is disposed on the first and second side surfaces 2e and 2f of the element body 2 from which the lead portion 33b of the first internal electrode 33 is drawn. In addition, the 1st baking electrode layer 51a may straddle the edge part of the 1st main surface 2c of the element | base_body 2, and the edge part of the 2nd main surface 2d. For the first baking electrode layer 51a, a conductive paste containing a metal or a conductive paste containing a metal and a glass component is applied to the first and second side surfaces 2e and 2f by, for example, transfer, and the conductive paste is applied. It is formed by baking at a predetermined temperature. The content ratio of the glass component of the first baking electrode layer 51a is, for example, 0 to 5%, preferably 1 to 5%.

  The second baked electrode layer 51b corresponds to the first end face 2a of the element body 2, the first and second main faces 2c, 2d, and the first baked electrode layer 51a (first and second side faces 2e, 2f). Position). The first and second main surfaces 2c, 2d and the second baked electrode layer 51b disposed on the first and second side surfaces 2e, 2f extend to the second end surface 2b side. The second baking electrode layer 51b is obtained by applying a conductive paste containing a metal and a glass component onto the element body 2 and the first baking electrode layer 51a by, for example, a dip method, and baking the conductive paste at a predetermined temperature. Is formed. The content ratio of the glass component of the second baked electrode layer 51b is, for example, 5 to 10%. That is, the content ratio of the glass component of the first baking electrode layer 51a is lower than the content ratio of the glass component of the second baking electrode layer 51b.

  The plating layer 51c is disposed so as to cover the entire second baking electrode layer 51b. The plating layer 51c has, for example, a single layer structure such as Cu plating, Ni plating, or Sn plating, or a multilayer structure combining these.

  The second terminal electrode 52 is disposed so as to cover the second end face 2b, the first and second main faces 2c, 2d, and the first and second side faces 2e, 2f. The second terminal electrode 52 is continuously arranged over the second end face 2b, the first and second main faces 2c, 2d, and the first and second side faces 2e, 2f. The second terminal electrode 52 includes a first baked electrode layer 52a, a second baked electrode layer 52b, and a plating layer 52c.

  The first baked electrode layer 52a is disposed on the first and second side surfaces 2e and 2f of the element body 2 from which the lead portion 34b of the first internal electrode 34 is drawn. The first baking electrode layer 52a may straddle the edge of the first main surface 2c and the edge of the second main surface 2d of the element body 2. The first baked electrode layer 52a is formed in the same manner as the first baked electrode layer 51a.

  The second baked electrode layer 52b corresponds to the first end surface 2b of the element body 2, the first and second main surfaces 2c, 2d, and the first baked electrode layer 52a (corresponding to the first and second side surfaces 2e, 2f). Position). The first and second main surfaces 2c and 2d and the second baking electrode layer 52b disposed on the first and second side surfaces 2e and 2f extend to the second end surface 2a side. The second baked electrode layer 52b is formed in the same manner as the second baked electrode layer 51b. The content ratio of the glass component of the first baking electrode layer 52a is lower than the content ratio of the glass component of the second baking electrode layer 52b.

  The plating layer 52c is disposed so as to cover the entire second baking electrode layer 52b. The plating layer 52c has, for example, a single layer structure such as Cu plating, Ni plating, Sn plating, or a multilayer structure in which these are combined.

  As described above, in the multilayer capacitor 50 according to this embodiment, the lead portions 33b and 34b of the first and second internal electrodes 33 and 34 are drawn to the first and second side surfaces 2e and 2f of the element body 2. Yes. Thereby, in the multilayer capacitor 50, since the distance between the lead-out part 33b and the lead-out part 34b can be reduced, the ESL can be reduced.

  In the multilayer capacitor 50, the first and second terminal electrodes 51 and 52 are provided with the first and second end faces 2a and 2b, the first and second main faces 2c and 2d, and the first and second end faces of the element body 2, respectively. Although arranged so as to cover the side surfaces 2e and 2f, the terminal electrode may not be formed on the second and second end surfaces 2a and 2b, or one of the first and second main surfaces 2c and 2d. It may be formed only on one main surface. In this case, the terminal electrode may be formed by, for example, a printing method.

[Sixth Embodiment]
Subsequently, a sixth embodiment will be described. FIG. 18 is a diagram illustrating a cross-sectional configuration of the multilayer capacitor in accordance with the sixth embodiment. 19A is a diagram showing a cross-sectional configuration of the multilayer capacitor shown in FIG. 18 taken along line aa, and FIG. 19B is a cross-sectional configuration of the multilayer capacitor shown in FIG. 18 taken along line bb. FIG.

  As illustrated in FIG. 18, the multilayer capacitor 60 includes an element body 2 configured in a substantially rectangular parallelepiped shape, first and second internal electrodes 43 and 44 disposed in the element body 2, and both end portions of the element body 2. And first and second terminal electrodes 61 and 62 disposed on the side.

  As shown in FIGS. 18 and 19, the first terminal electrode 61 is disposed so as to cover the first end surface 2a, the first and second main surfaces 2c, 2d, and the first and second side surfaces 2e, 2f. ing. The first terminal electrode 61 is continuously arranged over the first end surface 2a, the first and second main surfaces 2c, 2d, and the first and second side surfaces 2e, 2f. The first terminal electrode 61 includes a first baking electrode layer 61a, a second baking electrode layer 61b, and a plating layer 61c.

  The first baked electrode layer 61 a is disposed on the second side surface 2 f of the element body 2 from which the lead portion 43 b of the first internal electrode 43 is drawn. In addition, the 1st baking electrode layer 61a may straddle the edge part of the 1st main surface 2c of the element | base_body 2, and the edge part of the 2nd main surface 2d. The first baking electrode layer 61a applies a conductive paste containing a metal or a conductive paste containing a metal and a glass component to the second side surface 2f by, for example, transfer, and the conductive paste is baked at a predetermined temperature. Is formed. The content ratio of the glass component of the first baking electrode layer 61a is, for example, 0 to 5%, preferably 1 to 5%.

  The second baked electrode layer 61b corresponds to the first end surface 2a, the first and second main surfaces 2c and 2d, the first side surface 2e, and the first baked electrode layer 61a (the second side surface 2f) of the element body 2. Position). The first and second main surfaces 2c and 2d and the second baked electrode layer 61b disposed on the first and second side surfaces 2e and 2f extend to the second end surface 2b side. The second baking electrode layer 61b is formed by applying a conductive paste containing a metal and a glass component onto the element body 2 and the first baking electrode layer 61a by, for example, a dip method, and baking the conductive paste at a predetermined temperature. Is formed. The content ratio of the glass component of the second baking electrode layer 61b is, for example, 5 to 10%. That is, the content ratio of the glass component of the first baked electrode layer 61a is lower than the content ratio of the glass component of the second baked electrode layer 61b.

  The plating layer 61c is disposed so as to cover the entire second baking electrode layer 61b. The plating layer 61c has, for example, a single layer structure such as Cu plating, Ni plating, Sn plating, or a multilayer structure in which these are combined.

  The second terminal electrode 62 is disposed so as to cover the second end face 2b, the first and second main faces 2c, 2d, and the first and second side faces 2e, 2f. The second terminal electrode 62 is continuously arranged over the second end face 2b, the first and second main faces 2c, 2d, and the first and second side faces 2e, 2f. The second terminal electrode 62 includes a first baked electrode layer 62a, a second baked electrode layer 62b, and a plating layer 62c.

  The first baked electrode layer 62a is disposed on the second side surface 2f of the element body 2 from which the lead portion 44b of the first internal electrode 44 is drawn. In addition, the 1st baking electrode layer 62a may straddle the edge part of the 1st main surface 2c of the element | base_body 2, and the edge part of the 2nd main surface 2d. The first baked electrode layer 62a is formed in the same manner as the first baked electrode layer 61a.

  The second baked electrode layer 62b corresponds to the first end face 2b, the first and second main faces 2c, 2d, and the second side face 2e of the element body 2, and the first baked electrode layer 62a (corresponding to the second side face 2f). Position). The first and second main surfaces 2c and 2d and the second baked electrode layer 62b disposed on the first and second side surfaces 2e and 2f extend to the second end surface 2a side. The second baked electrode layer 62b is formed in the same manner as the second baked electrode layer 61b. The content ratio of the glass component of the first baked electrode layer 62a is lower than the content ratio of the glass component of the second baked electrode layer 62b.

  The plating layer 62c is disposed so as to cover the entire second baking electrode layer 62b. The plating layer 62c has, for example, a single layer structure such as Cu plating, Ni plating, Sn plating, or a multilayer structure in which these are combined.

  As described above, in the multilayer capacitor 60 according to this embodiment, the lead portions 43 b and 44 b of the first and second internal electrodes 43 and 44 are drawn to the second side surface 2 f of the element body 2. Thereby, in the multilayer capacitor 60, since the distance between the lead-out part 43b and the lead-out part 44b can be reduced, the ESL can be reduced.

  In the multilayer capacitor 60, the first and second terminal electrodes 61 and 62 are provided with the first and second end faces 2a and 2b, the first and second main faces 2c and 2d, and the first and second end faces of the element body 2, respectively. Although arranged so as to cover the side surfaces 2e and 2f, the terminal electrode may not be formed on the first and second end surfaces 2a and 2b, or one of the first and second main surfaces 2c and 2d. It may be formed only on one main surface. In this case, the terminal electrode may be formed by, for example, a printing method.

  The present invention is not limited to the above embodiment. For example, in the first embodiment, the first and second terminal electrodes 5 and 6 have first and second baking electrode layers 5a and 6a and second baking electrode layers 5b and 6b, respectively, and the first baking electrode layers 5a and 6a. In the above description, the glass content ratio is lower than the glass content ratio of the second baking electrode layers 5b and 6b as an example. However, the first and second terminal electrodes 5 and 6 have a low glass component content. The structure which has a 2nd area | region with much area | region and glass component content may be sufficient. In the case of this configuration, the first region is disposed in a joint region (joint portion) with the lead portion, and the second region is disposed on the outer surface side of the first and second terminal electrodes. The same applies to the second, third, fourth, fifth and sixth embodiments.

  1, 1A, 20, 30, 40, 50, 60 ... multilayer capacitor, 2 ... element body, 2a, 2b ... first, second end face, 2c, 2d ... first, second main surface, 2e, 2f ... first 1, second side, 3, 4, 33, 34, 43, 44 ... internal electrode, 3a, 4a, 33a, 34a, 43a, 44a ... main electrode part, 3b, 4b, 33b, 34b, 43b, 43b ... lead-out 5, 6, 21, 22, 31, 32, 41, 42, 51, 52, 61, 62 ... first and second terminal electrodes, 5a, 6a, 5Aa, 6Aa, 21a, 22a, 31a, 32a, 41a, 42a, 51a, 52a, 61a, 62a ... 1st printing electrode layer, 5b, 6b, 5Ab, 6Ab, 21b, 22b, 31b, 32b, 41b, 42b, 51b, 52b, 61b, 62b ... 2nd printing electrode Layers, 5c, 6c, 21c, 22c, 1c, 32c, 41c, 42c, 51c, 52c, 61c, 62c ... plating layer, 10 ... substrate (circuit board), 15, 16 ... via conductors.

Claims (11)

A pair of end faces facing each other, a pair of main faces extending so as to connect between the pair of end faces, and a pair of side faces extending so as to connect between the pair of main faces and facing each other. An element body in which a dimension between the pair of main surfaces is smaller than a dimension between the pair of end surfaces and a dimension between the pair of side surfaces;
First and second terminal electrodes located at both ends of the element body and continuously arranged over the main surface and at least one of the end surface and the side surface;
First and second internal electrodes connected to a corresponding one of the first and second terminal electrodes and disposed in the element body so as to face each other in a direction in which the pair of main surfaces face each other; With
The first and second internal electrodes include a main electrode portion facing each other, a lead portion that is drawn from the main electrode portion to the end face or the side surface of the element body and connected to the corresponding terminal electrode, Each with
The first and second terminal electrodes are arranged so as to cover at least the lead portion and are formed by baking a conductive paste, and are arranged on at least the first baking electrode layer and made of glass. And a second baking electrode layer formed by baking a conductive paste containing a component. The first baking electrode layer is formed by baking the conductive paste containing a glass component,
2. The multilayer capacitor according to claim 1, wherein a content ratio of the glass component of the first baking electrode layer is lower than a content ratio of the glass component of the second baking electrode layer. The first baked electrode layer is continuously disposed over the main surface of the element body and the end surface or the side surface of the element body from which the lead portion is drawn,
3. The multilayer capacitor according to claim 1, wherein the second baked electrode layer is disposed on the end surface side or the side surface side of the element body on which the first baked electrode layer is disposed. The first baked electrode layer is disposed on the end face or the side face of the element body from which the lead portion is drawn,
The second baked electrode layer is continuously disposed over the main surface of the element body and the end surface side or the side surface side of the element body on which the first baked electrode layer is disposed. The multilayer capacitor according to claim 1 or 2.   The multilayer capacitor according to claim 1, wherein the lead portion is led out to the side surface.   The width in the facing direction of the pair of side surfaces of the first and second terminal electrodes arranged on the main surface is larger than the separation distance between the first terminal electrode and the second terminal electrode, The multilayer capacitor according to any one of claims 1 to 5.   The width in the facing direction of the pair of end surfaces of the first and second terminal electrodes arranged on the main surface is larger than the separation distance between the first terminal electrode and the second terminal electrode, The multilayer capacitor according to any one of claims 1 to 6.   Of the first and second internal electrodes, the dimension between the internal electrode closest to the main surface and the one main surface, and the other main electrode of the first and second internal electrodes The dimension between the inner electrode closest to the surface and the other main surface is substantially the same as the dimension between the inner electrode closest to the one main surface and the inner electrode closest to the other main surface. The multilayer capacitor according to claim 1, wherein the multilayer capacitor is a capacitor.   The multilayer capacitor according to claim 1, wherein a plating layer is disposed on the first and second baked electrode layers.   The multilayer capacitor according to claim 1, wherein at least one of the first and second baked electrode layers is directly connected to a via conductor of the circuit board. A pair of end faces facing each other, a pair of main faces extending so as to connect between the pair of end faces, and a pair of side faces extending so as to connect between the pair of main faces and facing each other. An element body in which a dimension between the pair of main surfaces is smaller than a dimension between the pair of end surfaces and a dimension between the pair of side surfaces;
First and second terminal electrodes located at both ends of the element body and continuously arranged over the main surface and at least one of the end surface and the side surface;
First and second internal electrodes connected to a corresponding one of the first and second terminal electrodes and disposed in the element body so as to face each other in a direction in which the pair of main surfaces face each other; With
The first and second internal electrodes include a main electrode portion facing each other, and a lead portion that is drawn from the main electrode portion to the end face or the side surface of the element body and connected to the corresponding terminal electrode. Each has
The first and second terminal electrodes include a first region disposed in a joint region with the lead portion, a glass component, and disposed on the outer surface side of the first and second terminal electrodes. And a second region, respectively.

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