JP2014116488A - Resistivity measurement method of n type silicon epitaxial layer - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 74
- 239000010703 silicon Substances 0.000 title claims abstract description 74
- 238000000691 measurement method Methods 0.000 title claims abstract 5
- 238000000034 method Methods 0.000 claims abstract description 40
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 230000003068 static effect Effects 0.000 claims description 20
- 230000005611 electricity Effects 0.000 claims description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 2
- 238000005259 measurement Methods 0.000 abstract description 10
- 238000004140 cleaning Methods 0.000 description 10
- 208000028659 discharge Diseases 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- -1 SC2 cleaning Chemical compound 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
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- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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Abstract
Description
本発明は、Ｎ型シリコンエピタキシャル層の抵抗率を測定する方法に関する。 The present invention relates to a method for measuring the resistivity of an N-type silicon epitaxial layer.
従来、シリコンエピタキシャル層の抵抗率を測定する方法として、表面光電圧（Ｓｕｒｆａｃｅ Ｐｈｏｔｏ Ｖｏｌｔａｇｅ、ＳＰＶ）法が知られている（特許文献１）。表面光電圧法は、シリコンエピタキシャル層に対して非接触の状態で測定できるため、シリコンエピタキシャルウェーハを破壊せずに抵抗率測定することができることから、優れた測定方法として期待されている。 Conventionally, a surface photovoltage (SPV) method is known as a method for measuring the resistivity of a silicon epitaxial layer (Patent Document 1). Since the surface photovoltage method can be measured in a non-contact state with respect to the silicon epitaxial layer, the resistivity can be measured without destroying the silicon epitaxial wafer.
例えば、Ｎ型シリコンエピタキシャル層の抵抗率を表面光電圧法により測定する場合、まず、空気などの酸素含有雰囲気中で紫外線を照射して形成されるオゾンガス含有雰囲気にシリコンエピタキシャル層の表面を曝すことにより、シリコンエピタキシャル層の表面に例えば厚さ１ｎｍ以上の酸化膜を形成する（特許文献２）。そして、コロナ放電により酸化膜上にマイナスイオンを帯電させて最大空乏層を形成すると、Ｎ型シリコンエピタキシャル層の表面が反転状態となる。反転状態となると、最大空乏層の幅を測定することができ、この最大空乏層の幅からキャリア濃度が得られ、このキャリア濃度から抵抗率を算出できる。 For example, when measuring the resistivity of an N-type silicon epitaxial layer by the surface photovoltage method, first, by exposing the surface of the silicon epitaxial layer to an ozone gas-containing atmosphere formed by irradiating ultraviolet rays in an oxygen-containing atmosphere such as air. For example, an oxide film having a thickness of 1 nm or more is formed on the surface of the silicon epitaxial layer (Patent Document 2). Then, when negative ions are charged on the oxide film by corona discharge to form a maximum depletion layer, the surface of the N-type silicon epitaxial layer is inverted. In the inverted state, the width of the maximum depletion layer can be measured, the carrier concentration can be obtained from the width of the maximum depletion layer, and the resistivity can be calculated from this carrier concentration.
しかしながら、Ｎ型シリコンエピタキシャル層の抵抗率を表面光電圧法により繰返し測定する場合、抵抗率が経時変化して当初の抵抗率が維持されず、測定値の再現性が乏しいという問題がある。 However, when the resistivity of the N-type silicon epitaxial layer is repeatedly measured by the surface photovoltage method, there is a problem that the resistivity changes with time, the initial resistivity is not maintained, and the reproducibility of the measured value is poor.
本発明は、上記問題点に鑑みてなされたものであって、表面光電圧法によりＮ型シリコンエピタキシャル層の抵抗率を測定する際、再現性良く測定することができる方法を提供することを目的とする。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a method capable of measuring with good reproducibility when measuring the resistivity of an N-type silicon epitaxial layer by a surface photovoltage method. To do.
上記目的を達成するために、本発明は、Ｎ型シリコンエピタキシャル層の抵抗率を測定する方法であって、前記Ｎ型シリコンエピタキシャル層の表面酸化膜を除去する酸化膜除去工程と、前記表面酸化膜を除去した前記Ｎ型シリコンエピタキシャル層の表面に新たな酸化膜を形成する酸化膜形成工程と、前記新たな酸化膜の表面に、コロナ放電により静電気を帯電させ、前記Ｎ型シリコンエピタキシャル層の表面近傍に形成される空乏層の幅を表面光電圧法によって測定する空乏層幅測定工程とを有することを特徴とするＮ型シリコンエピタキシャル層の抵抗率測定方法を提供する。 In order to achieve the above object, the present invention provides a method for measuring the resistivity of an N-type silicon epitaxial layer, the oxide film removing step for removing the surface oxide film of the N-type silicon epitaxial layer, and the surface oxidation An oxide film forming step for forming a new oxide film on the surface of the N-type silicon epitaxial layer from which the film has been removed, and static electricity is charged on the surface of the new oxide film by corona discharge, so that the N-type silicon epitaxial layer And a depletion layer width measuring step of measuring a width of a depletion layer formed in the vicinity of the surface by a surface photovoltage method.
このように、予め表面酸化膜を除去してから、抵抗率測定のための新たな酸化膜を形成することで、Ｎ型シリコンエピタキシャル層の表面に所望の厚さで均一な酸化膜を形成することができる。このため、酸化膜の厚さの影響を排除して、再現性良く抵抗率を測定することができる。 Thus, after removing the surface oxide film in advance, a new oxide film for resistivity measurement is formed, thereby forming a uniform oxide film with a desired thickness on the surface of the N-type silicon epitaxial layer. be able to. For this reason, it is possible to measure the resistivity with good reproducibility by eliminating the influence of the thickness of the oxide film.
このとき、前記酸化膜除去工程において、前記表面酸化膜をフッ酸で処理することにより除去することが好ましい。
このように除去することで、効率的に表面酸化膜を除去することができる。
At this time, in the oxide film removing step, it is preferable to remove the surface oxide film by treating with hydrofluoric acid.
By removing in this way, the surface oxide film can be efficiently removed.
このとき、前記酸化膜形成工程において、前記Ｎ型シリコンエピタキシャル層の表面をオゾンガス含有雰囲気中に曝すことにより前記新たな酸化膜を形成することが好ましい。
このような方法により、所望厚さの新たな酸化膜を効率的に形成することができる。
At this time, in the oxide film forming step, it is preferable to form the new oxide film by exposing the surface of the N-type silicon epitaxial layer to an ozone gas-containing atmosphere.
By such a method, a new oxide film having a desired thickness can be efficiently formed.
このとき、前記酸化膜形成工程と前記空乏層幅測定工程の間に、前記Ｎ型シリコンエピタキシャル層の静電気除去を行う静電気除去工程を行うことが好ましい。
このように、オゾンガス含有雰囲気中に曝して酸化膜を形成した際にＮ型シリコンエピタキシャル層の表面に帯電した静電気を除去することで、確実に精度良く抵抗率を測定できる。
At this time, it is preferable to perform a static electricity removing step for removing static electricity from the N-type silicon epitaxial layer between the oxide film forming step and the depletion layer width measuring step.
Thus, by removing the static electricity charged on the surface of the N-type silicon epitaxial layer when the oxide film is formed by exposure to an atmosphere containing ozone gas, the resistivity can be reliably measured with high accuracy.
このとき、前記酸化膜形成工程において、前記Ｎ型シリコンエピタキシャル層をオゾン水又は過酸化水素水で処理することにより前記新たな酸化膜を形成することが好ましい。
このような方法により、所望厚さの新たな酸化膜を効率的に形成することができる。
At this time, it is preferable that the new oxide film is formed by treating the N-type silicon epitaxial layer with ozone water or hydrogen peroxide water in the oxide film forming step.
By such a method, a new oxide film having a desired thickness can be efficiently formed.
このとき、前記酸化膜除去工程と前記酸化膜形成工程を、連続的に行うことが好ましい。
このように連続的に行うことで、より効率的かつ均一に新たな酸化膜を形成することができる。
At this time, it is preferable that the oxide film removing step and the oxide film forming step are continuously performed.
By continuously performing in this way, a new oxide film can be formed more efficiently and uniformly.
以上のように、本発明によれば、表面光電圧法によりＮ型シリコンエピタキシャル層の抵抗率を測定する際、再現性良く抵抗率を測定することができる。 As described above, according to the present invention, when measuring the resistivity of the N-type silicon epitaxial layer by the surface photovoltage method, the resistivity can be measured with good reproducibility.
以下、本発明について、実施態様の一例として、図を参照しながら詳細に説明するが、本発明はこれに限定されるものではない。
図１は、本発明のＮ型シリコンエピタキシャル層の抵抗率測定方法の一例を示すフロー図である。
Hereinafter, the present invention will be described in detail as an example of an embodiment with reference to the drawings, but the present invention is not limited thereto.
FIG. 1 is a flowchart showing an example of a method for measuring the resistivity of an N-type silicon epitaxial layer according to the present invention.
本発明は、エピタキシャルウェーハのＮ型シリコンエピタキシャル層の抵抗率を測定する方法である。エピタキシャルウェーハは、例えば、気相成長装置により、シリコン単結晶ウェーハ上に、所望の抵抗率と厚さを有するＮ型シリコンエピタキシャル層を成長させて作製することができる。 The present invention is a method for measuring the resistivity of an N-type silicon epitaxial layer of an epitaxial wafer. An epitaxial wafer can be produced by growing an N-type silicon epitaxial layer having a desired resistivity and thickness on a silicon single crystal wafer using, for example, a vapor phase growth apparatus.
本発明では、図１（ａ）に示すように、まず、上記のようにして得られたＮ型シリコンエピタキシャル層の表面酸化膜を除去する酸化膜除去工程を行う。 In the present invention, as shown in FIG. 1A, first, an oxide film removing step is performed to remove the surface oxide film of the N-type silicon epitaxial layer obtained as described above.
Ｎ型シリコンエピタキシャル層が形成されたエピタキシャルウェーハを、気相成長装置から空気中に取り出すと、Ｎ型シリコンエピタキシャル層の表面に自然酸化膜の形成が始まる。この自然酸化膜は、約１ｎｍになるまでしだいに厚くなる上に不均一な厚さを有する。
このようなＮ型シリコンエピタキシャル層の抵抗率を表面光電圧法により測定する際、Ｎ型シリコンエピタキシャル層の表面に酸化膜を予め形成する必要があるが、Ｎ型シリコンエピタキシャル層の場合、酸化膜厚の違いにより抵抗率の測定結果が変化してしまう。そこで本発明では、まず、Ｎ型シリコンエピタキシャル層の表面に形成されている表面酸化膜（自然酸化膜）を除去する。これにより、次工程の酸化膜形成工程で所望厚さで均一な酸化膜を形成することが可能になる。従って、本発明であれば、表面光電圧法によりＮ型シリコンエピタキシャル層の抵抗率を測定する際、再現性良く抵抗率を測定することができる。
When the epitaxial wafer on which the N-type silicon epitaxial layer is formed is taken out from the vapor phase growth apparatus into the air, formation of a natural oxide film on the surface of the N-type silicon epitaxial layer starts. This natural oxide film gradually becomes thick until it reaches about 1 nm and has a non-uniform thickness.
When measuring the resistivity of such an N-type silicon epitaxial layer by the surface photovoltage method, it is necessary to form an oxide film in advance on the surface of the N-type silicon epitaxial layer. The measurement result of resistivity changes due to the difference. Therefore, in the present invention, first, the surface oxide film (natural oxide film) formed on the surface of the N-type silicon epitaxial layer is removed. This makes it possible to form a uniform oxide film with a desired thickness in the next oxide film formation process. Therefore, according to the present invention, when measuring the resistivity of the N-type silicon epitaxial layer by the surface photovoltage method, the resistivity can be measured with good reproducibility.
酸化膜除去工程では、表面酸化膜をフッ酸で処理することにより除去することが好ましい。処理方法としては、フッ酸にエピタキシャルウェーハを浸漬させる方法等がある。
このようにフッ酸で処理することで、表面酸化膜を効率的に除去することができる。
In the oxide film removal step, the surface oxide film is preferably removed by treatment with hydrofluoric acid. As a processing method, there is a method of immersing an epitaxial wafer in hydrofluoric acid.
By treating with hydrofluoric acid in this way, the surface oxide film can be efficiently removed.
次に、図１（ｂ）に示すように、表面酸化膜を除去したＮ型シリコンエピタキシャル層の表面に、抵抗率測定のための新たな酸化膜を形成する酸化膜形成工程を行う。 Next, as shown in FIG. 1B, an oxide film forming step is performed for forming a new oxide film for resistivity measurement on the surface of the N-type silicon epitaxial layer from which the surface oxide film has been removed.
酸化膜形成方法としては、例えば、空気中でＮ型シリコンエピタキシャル層の表面に対して水銀ランプから紫外線を照射してオゾンを発生させ、オゾンガス含有雰囲気中にエピタキシャル層の表面を曝すことで、厚さ１ｎｍ程度の均一な酸化膜を形成することができる。
これにより、所望厚さの酸化膜を効率的に形成することができる。
As an oxide film forming method, for example, the surface of an N-type silicon epitaxial layer is irradiated with ultraviolet rays from a mercury lamp in air to generate ozone, and the surface of the epitaxial layer is exposed to an ozone gas-containing atmosphere. A uniform oxide film having a thickness of about 1 nm can be formed.
Thereby, an oxide film having a desired thickness can be efficiently formed.
図２は、Ｎ型シリコンエピタキシャル層の抵抗率と紫外線照射後の帯電量との関係を示すグラフである。
上記のように紫外線照射でＮ型シリコンエピタキシャル層に酸化膜を形成すると、エピタキシャル層の表面にマイナスの静電気が帯電する。静電気の帯電量の絶対値は、図２に示すように、Ｎ型シリコンエピタキシャル層の抵抗率が低いほど大きい。そして、表面光電圧法は、エピタキシャル層の表面の静電気量の影響を強く受けることがある。
FIG. 2 is a graph showing the relationship between the resistivity of the N-type silicon epitaxial layer and the charge amount after ultraviolet irradiation.
When an oxide film is formed on the N-type silicon epitaxial layer by ultraviolet irradiation as described above, negative static electricity is charged on the surface of the epitaxial layer. As shown in FIG. 2, the absolute value of the electrostatic charge amount increases as the resistivity of the N-type silicon epitaxial layer decreases. The surface photovoltage method may be strongly influenced by the amount of static electricity on the surface of the epitaxial layer.
そこで、図１（ｃ）に示すように、紫外線照射による酸化膜形成工程と表面光電圧法による空乏層幅測定工程の間に、Ｎ型シリコンエピタキシャル層の静電気除去を行う静電気除去工程を行うことが好ましい。
これにより、Ｎ型シリコンエピタキシャル層の表面に帯電していた静電気が除去されるので、次工程の空乏層幅測定工程において行われるコロナ放電で所望の静電気を印加することが可能になり、抵抗率測定の精度をより向上できる。この静電気除去工程は、必須ではないが、Ｎ型シリコンエピタキシャル層の抵抗率が低いほど重要である。
Therefore, as shown in FIG. 1C, a static electricity removing step for removing static electricity from the N-type silicon epitaxial layer is performed between the oxide film forming step by ultraviolet irradiation and the depletion layer width measuring step by the surface photovoltage method. preferable.
As a result, the static electricity charged on the surface of the N-type silicon epitaxial layer is removed, so that the desired static electricity can be applied by corona discharge performed in the next depletion layer width measurement step, and the resistivity Measurement accuracy can be further improved. This static electricity removal step is not essential, but is more important as the resistivity of the N-type silicon epitaxial layer is lower.
図３は、静電気除去装置の一例を示す概念図である。
図３に示すように、静電気除去装置２０は、例えば、＋イオンを発生させる電極針２１と、−イオンを発生させる電極針２２と、電極針２１、２２に直流電圧を印加する電源２３、２４と、接地電極２５とを有し、電極針２１と電極針２２に高電圧を印加することでコロナ放電を発生させる。
FIG. 3 is a conceptual diagram showing an example of the static eliminator.
As shown in FIG. 3, the
コロナ放電が発生すると、電極針２１、２２周辺に存在している空気が電気的に分解されてイオンが発生し、このイオンで反対極性の静電気を電気的に中和することによりＮ型シリコンエピタキシャル層１１の除電を行う。
When corona discharge occurs, the air existing around the electrode needles 21 and 22 is electrically decomposed to generate ions, and the static electricity of the opposite polarity is electrically neutralized by these ions, thereby N-type silicon epitaxial. The
図１（ｂ）の酸化膜形成工程は、Ｎ型シリコンエピタキシャル層をオゾン水又は過酸化水素水で処理することにより新たな酸化膜を形成することもできる。この方法によっても、所望厚さの均一な酸化膜を効率的に形成することができる。 In the oxide film forming step of FIG. 1B, a new oxide film can be formed by treating the N-type silicon epitaxial layer with ozone water or hydrogen peroxide solution. Also by this method, a uniform oxide film having a desired thickness can be efficiently formed.
この場合、酸化膜除去工程（図１（ａ））と酸化膜形成工程（図１（ｂ））を一連の洗浄ラインで連続的に行うことが好ましい。図４に、酸化膜除去工程と酸化膜形成工程を一連の洗浄で行う場合のフロー図を示す。 In this case, it is preferable that the oxide film removing step (FIG. 1A) and the oxide film forming step (FIG. 1B) are continuously performed in a series of cleaning lines. FIG. 4 shows a flow chart when the oxide film removing step and the oxide film forming step are performed by a series of cleaning.
酸化膜除去工程は、例えば濃度２５％のＨＦ（フッ酸）を用いた酸化膜除去洗浄を行って、表面酸化膜を除去することができる（図４（ａ））。その後、純水リンスを行い（図４（ｂ））、酸化膜形成工程を行う（図４（ｃ））。酸化膜形成工程は、例えば、ＮＨ４ＯＨ（２７重量％）：Ｈ２Ｏ２（３０重量％）：Ｈ２Ｏ＝１：１：５（体積比）の洗浄液によるＳＣ１洗浄、あるいはＨＣｌ（３７重量％）：Ｈ２Ｏ２（３０重量％）：Ｈ２Ｏ＝１：１：５（体積比）の洗浄液によるＳＣ２洗浄のような過酸化水素水中での洗浄や、またはオゾン水中での洗浄を行うことにより、新たな酸化膜を形成してもよい。その後、純水リンスを行い（図４（ｄ））、乾燥して（図４（ｅ））、一連の洗浄ラインを終了する。
このように連続的に行うことで、表面酸化膜除去後に空気に触れて再度自然酸化膜が形成されないうちに、新たな酸化膜を均一に形成することができる。
In the oxide film removal step, the surface oxide film can be removed by performing oxide film removal cleaning using HF (hydrofluoric acid) having a concentration of 25%, for example (FIG. 4A). Thereafter, rinsing with pure water is performed (FIG. 4B), and an oxide film forming step is performed (FIG. 4C). The oxide film forming step may be performed by, for example, SC1 cleaning with a cleaning solution of NH 4 OH (27 wt%): H 2 O 2 (30 wt%): H 2 O = 1: 1: 5 (volume ratio), or HCl (37 % By weight): H 2 O 2 (30% by weight): H 2 O = 1: 1: 5 (volume ratio) cleaning with hydrogen peroxide water such as SC2 cleaning, or cleaning with ozone water A new oxide film may be formed by performing. Thereafter, rinsing with pure water is performed (FIG. 4D), drying is performed (FIG. 4E), and a series of cleaning lines is completed.
By continuously performing in this way, a new oxide film can be uniformly formed before the natural oxide film is formed again by contact with air after the surface oxide film is removed.
そして、図１（ｄ）に示すように、新たな酸化膜の表面に、コロナ放電により静電気を帯電させ、Ｎ型シリコンエピタキシャル層の表面近傍に形成される空乏層の幅を表面光電圧法によって測定する空乏層幅測定工程を行う。このように表面光電圧法によって測定することで、非接触かつ迅速、簡便に精度良く抵抗率を測定することができる。
例えば、Ｎ型シリコンエピタキシャル層にコロナ放電処理を行いながらＳＰＶ信号を測定し、そのＳＰＶ信号の測定結果からＮ型シリコンエピタキシャル層の表面近傍に形成された空乏層幅が得られる。この測定値をキャリア濃度及び抵抗率に換算する。
Then, as shown in FIG. 1D, the surface of the new oxide film is charged with static electricity by corona discharge, and the width of the depletion layer formed in the vicinity of the surface of the N-type silicon epitaxial layer is measured by the surface photovoltage method. A depletion layer width measuring step is performed. Thus, by measuring by the surface photovoltage method, it is possible to measure the resistivity in a non-contact, quick and simple manner with high accuracy.
For example, the SPV signal is measured while performing a corona discharge treatment on the N-type silicon epitaxial layer, and the width of the depletion layer formed near the surface of the N-type silicon epitaxial layer is obtained from the measurement result of the SPV signal. This measured value is converted into carrier concentration and resistivity.
このような本発明の抵抗率測定方法であれば、例えば繰り返し測定を行う場合にも、簡易な方法で、日間変動を抑制して、再現性良く抵抗率を測定することができる。 With such a resistivity measuring method of the present invention, for example, even when repeated measurement is performed, it is possible to measure the resistivity with good reproducibility by suppressing daily fluctuations with a simple method.
以下、実施例及び比較例を示して本発明をより具体的に説明するが、本発明はこれらに限定されるものではない。
（実施例）
直径２００ｍｍ、抵抗率約４ΩｃｍのＮ型シリコンエピタキシャルウェーハ１枚のＮ型シリコンエピタキシャル層の抵抗率を、以下の手順で３日間測定し、日間変動を評価した。
EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to these.
(Example)
The resistivity of an N-type silicon epitaxial layer of one N-type silicon epitaxial wafer having a diameter of 200 mm and a resistivity of about 4 Ωcm was measured for 3 days according to the following procedure, and daily fluctuations were evaluated.
まず、Ｎ型シリコンエピタキシャルウェーハを濃度２５％のフッ酸で処理し、Ｎ型シリコンエピタキシャル層の表面酸化膜を除去した。次に、空気中でＮ型シリコンエピタキシャル層の表面に対して水銀ランプから紫外線を照射してオゾンを発生させ、オゾンガス含有雰囲気中でエピタキシャル層の表面に厚さ１ｎｍ程度の酸化膜を形成した。 First, the N-type silicon epitaxial wafer was treated with hydrofluoric acid having a concentration of 25%, and the surface oxide film of the N-type silicon epitaxial layer was removed. Next, the surface of the N-type silicon epitaxial layer was irradiated with ultraviolet rays from a mercury lamp in the air to generate ozone, and an oxide film having a thickness of about 1 nm was formed on the surface of the epitaxial layer in an ozone gas-containing atmosphere.
続いて、コロナ放電により酸化膜の表面に静電気を帯電させながらＳＰＶ信号を測定し、Ｎ型シリコンエピタキシャル層の表面近傍に形成される空乏層の幅を得て、キャリア濃度及び抵抗率に換算した。 Subsequently, the SPV signal was measured while static electricity was charged on the surface of the oxide film by corona discharge, the width of the depletion layer formed near the surface of the N-type silicon epitaxial layer was obtained, and converted into carrier concentration and resistivity. .
このようにして得られた直径方向の抵抗率分布を図５に示す。図５（ａ）は、１−３日目の直径方向の抵抗率分布を示す。図５（ｂ）は、各測定点における３日間の最大値（ｍａｘ）−最小値（ｍｉｎ）の値を直径方向で示す。３日間の最大値（ｍａｘ）−最小値（ｍｉｎ）の平均値は、０．０５Ωｃｍであった。 The resistivity distribution in the diameter direction thus obtained is shown in FIG. Fig.5 (a) shows the resistivity distribution of the diameter direction of the 1-3rd day. FIG.5 (b) shows the value of the maximum value (max) -minimum value (min) for 3 days in each measurement point in a diameter direction. The average value of the maximum value (max) -minimum value (min) for 3 days was 0.05 Ωcm.
（比較例）
Ｎ型シリコンエピタキシャルウェーハをフッ酸処理しないこと以外は実施例と同様に、抵抗率の日間変動を評価した。その結果を図６に示す。図６（ａ）は、１−３日目の直径方向の抵抗率分布を示す。図６（ｂ）は、各測定点における３日間の最大値（ｍａｘ）−最小値（ｍｉｎ）の値を直径方向で示す。３日間の最大値（ｍａｘ）−最小値（ｍｉｎ）の平均値は、０．１０Ωｃｍであった。
(Comparative example)
The daily fluctuation of resistivity was evaluated in the same manner as in the example except that the N-type silicon epitaxial wafer was not subjected to hydrofluoric acid treatment. The result is shown in FIG. FIG. 6A shows the resistivity distribution in the diameter direction on the first to third days. FIG.6 (b) shows the value of the maximum value (max) -minimum value (min) for 3 days in each measurement point in a diameter direction. The average value of the maximum value (max) -minimum value (min) for 3 days was 0.10 Ωcm.
以上のように本発明であれば、例えばＮ型シリコンエピタキシャル層の抵抗率を表面光電圧法により繰返し測定する場合、抵抗率の経時変化を抑制することができるので、抵抗率の日間変動を小さくすることができる。 As described above, according to the present invention, for example, when the resistivity of the N-type silicon epitaxial layer is repeatedly measured by the surface photovoltage method, it is possible to suppress the temporal change of the resistivity, so that the daily fluctuation of the resistivity is reduced. be able to.
なお、本発明は、上記実施形態に限定されるものではない。上記実施形態は、例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。 The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
１１…Ｎ型シリコンエピタキシャル層、 ２０…静電気除去装置、
２１、２２…電極針、 ２３、２４…電源、 ２５…接地電極。
11 ... N-type silicon epitaxial layer, 20 ... Static eliminator,
21, 22 ... Electrode needles, 23, 24 ... Power source, 25 ... Ground electrode.
Claims (6)
前記Ｎ型シリコンエピタキシャル層の表面酸化膜を除去する酸化膜除去工程と、
前記表面酸化膜を除去した前記Ｎ型シリコンエピタキシャル層の表面に新たな酸化膜を形成する酸化膜形成工程と、
前記新たな酸化膜の表面に、コロナ放電により静電気を帯電させ、前記Ｎ型シリコンエピタキシャル層の表面近傍に形成される空乏層の幅を表面光電圧法によって測定する空乏層幅測定工程とを有することを特徴とするＮ型シリコンエピタキシャル層の抵抗率測定方法。 A method for measuring the resistivity of an N-type silicon epitaxial layer, comprising:
An oxide film removing step for removing a surface oxide film of the N-type silicon epitaxial layer;
An oxide film forming step of forming a new oxide film on the surface of the N-type silicon epitaxial layer from which the surface oxide film has been removed;
A depletion layer width measuring step of charging static electricity on the surface of the new oxide film by corona discharge and measuring the width of the depletion layer formed near the surface of the N-type silicon epitaxial layer by a surface photovoltage method. A method for measuring the resistivity of an N-type silicon epitaxial layer, characterized in that:
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017219409A (en) * | 2016-06-07 | 2017-12-14 | 信越半導体株式会社 | Surface defect inspection method of semiconductor silicon wafer |
| WO2018037831A1 (en) * | 2016-08-25 | 2018-03-01 | 信越半導体株式会社 | Resistivity standard sample manufacturing method and epitaxial wafer resistivity measuring method |
| JP6451881B1 (en) * | 2018-01-24 | 2019-01-16 | 株式会社Sumco | Silicon layer evaluation method and silicon epitaxial wafer manufacturing method |
| CN115346889A (en) * | 2022-10-17 | 2022-11-15 | 广州粤芯半导体技术有限公司 | Monitoring method of epitaxial process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002516486A (en) * | 1998-05-21 | 2002-06-04 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Manufacturing method of epitaxial wafer for resistivity measurement |
| JP2005229026A (en) * | 2004-02-16 | 2005-08-25 | Kyocera Corp | Silicon-substrate evaluating method |
| JP2010177269A (en) * | 2009-01-27 | 2010-08-12 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Method of measuring resistivity of n type semiconductor wafer |
-
2012
- 2012-12-11 JP JP2012270046A patent/JP5900305B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002516486A (en) * | 1998-05-21 | 2002-06-04 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Manufacturing method of epitaxial wafer for resistivity measurement |
| JP2005229026A (en) * | 2004-02-16 | 2005-08-25 | Kyocera Corp | Silicon-substrate evaluating method |
| JP2010177269A (en) * | 2009-01-27 | 2010-08-12 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Method of measuring resistivity of n type semiconductor wafer |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017219409A (en) * | 2016-06-07 | 2017-12-14 | 信越半導体株式会社 | Surface defect inspection method of semiconductor silicon wafer |
| WO2018037831A1 (en) * | 2016-08-25 | 2018-03-01 | 信越半導体株式会社 | Resistivity standard sample manufacturing method and epitaxial wafer resistivity measuring method |
| JP2018032771A (en) * | 2016-08-25 | 2018-03-01 | 信越半導体株式会社 | Method for manufacturing resistivity standard sample, and method for measuring resistivity of epitaxial wafer |
| CN109643669A (en) * | 2016-08-25 | 2019-04-16 | 信越半导体株式会社 | The manufacturing method of resistivity master sample and the determination of resistivity method of epitaxy wafer |
| US10720366B2 (en) | 2016-08-25 | 2020-07-21 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing resistivity standard sample and method for measuring resistivity of epitaxial wafer |
| TWI739874B (en) * | 2016-08-25 | 2021-09-21 | 日商信越半導體股份有限公司 | Method for manufacturing resistivity standard sample and method for measuring resistivity of epitaxial wafer |
| CN109643669B (en) * | 2016-08-25 | 2023-05-02 | 信越半导体株式会社 | Method for manufacturing resistivity standard sample and method for measuring resistivity of epitaxial wafer |
| JP6451881B1 (en) * | 2018-01-24 | 2019-01-16 | 株式会社Sumco | Silicon layer evaluation method and silicon epitaxial wafer manufacturing method |
| JP2019129223A (en) * | 2018-01-24 | 2019-08-01 | 株式会社Sumco | Silicon layer evaluation method and method for manufacturing silicon epitaxial wafer |
| CN115346889A (en) * | 2022-10-17 | 2022-11-15 | 广州粤芯半导体技术有限公司 | Monitoring method of epitaxial process |
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