JP2014096605A - Light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device which can achieve any one, preferably all, of enhancement of luminous efficiency, suppression of uneven luminance or uneven color, and high output light emission, even if a light-emitting element of large area is mounted.SOLUTION: A light-emitting device includes a light transmission member 20 having a surface becoming the light-emitting face 90 of the light-emitting device and a light-receiving face, a light-emitting element 10 including a translucent substrate having an emission face coupled with the light-receiving face, and a surface facing the emission face and provided with a semiconductor element structure, and a covering member 40 including a light reflective material 45, and covering the side face of the light-emitting element, while exposing the emission face, and extending from the side face to cover a part of the light transmission member. On the surface of the translucent substrate, the light-emitting element has a division part, and a plurality of light-emitting structures 12 provided in respective regions of the semiconductor element structure divided by the division part. The covering member covers the division part, and the light-emitting structures adjoining the division part, and has a light reflective part on the covering side surface.

Description

The present invention relates to a light-emitting device, and more specifically, a light-emitting device including a plurality of element structures, a light-emitting element provided with a light-emitting structure on the same substrate, and a light-reflective coating member that covers the light-emitting element. About.

2. Description of the Related Art In recent years, light-emitting devices equipped with semiconductor light-emitting elements such as light-emitting diodes (LEDs) and laser diodes (LDs) as light sources have been used for various lighting and display devices. In particular, these semiconductor light-emitting elements are attracting attention as light sources for illumination that can replace light bulbs and fluorescent lamps because of their low power consumption and long life, and further improvements in light emission output and light emission efficiency are required. There is also a need for a light source that has excellent light distribution characteristics, high brightness, and high reliability, such as floodlights such as automobile headlights.

For example, Patent Document 1 has a plurality of light emitting units formed on a substrate transparent to the emission wavelength, the main light extraction direction is the substrate side, and between the substrate and the first conductivity type semiconductor layer, The light emitting units have a buffer layer provided in common between a plurality of light emitting units, and the light emitting units are electrically separated by a separation groove between the light emitting units formed by removing the interface or part of the buffer layer. One light emitting unit has a plurality of light emitting points including an active layer structure, a second conductive type semiconductor layer, and a first conductive type side electrode.
There has been proposed an integrated compound semiconductor light-emitting device that is electrically conductive in a conductive semiconductor layer.

Further, for example, the light emitting device disclosed in Patent Document 2 includes an LED in a case opened on the light extraction side.
The element is placed, the case is filled with a coating material containing light reflecting particles, and the outer surface area of the LED element excluding the light extraction surface is covered. In addition, a sheet-like phosphor layer covering the light extraction surface of the LED element is disposed on the outer surface of the molded coating material,
Y that emits primary light (blue light) and LED-converted secondary light (yellow light) from the LED element
It is made of a resin containing a phosphor such as AG, and can emit white light from the light exit surface by mixing the primary light and the secondary light.

JP 2007-324579 A JP 2007-019096 A JP 2002-305328 A WO2009 / 069671

A light emitting device with a large light emitting area for high output has poor current diffusivity throughout the device,
There is a problem in that the light emission intensity distribution on the light emitting surface is uneven and the extraction efficiency of light emitted inside the device is deteriorated. Further, as disclosed in the above-mentioned Patent Document 1, a plurality of element structures separated from each other by separation grooves can be formed on the same substrate, and the problem can be improved. There is a risk that the light extraction efficiency may be reduced due to light loss due to light absorption in a wiring pattern for electrically connecting structures or a bonding member provided on the wiring pattern. Similarly, in a light-emitting element having a reflection structure such as an electrode covering the element structure and a metal reflection film, light is absorbed and lost by the reflection structure on the reflection side of the element structure, and the light reflected inside the element is Since light absorption and loss occur inside the device, the light extraction efficiency may eventually decrease. Further, on such a light emitting element having a plurality of element structures separated from each other on the same substrate, for example, secondary light obtained by wavelength-converting primary light from the light emitting element as described in Patent Document 2 above. When joining a wavelength conversion member containing a phosphor that emits light, it is caused by the light distribution of each element structure,
As the luminance of the primary light on the separation groove decreases, there is a problem that the color mixing ratio of the primary light and the secondary light changes within the light emitting surface, resulting in luminance unevenness and color unevenness.

Therefore, the present invention has been made in view of such circumstances. Even when a light emitting element having a large area is mounted, the light emission efficiency is increased, the occurrence of uneven brightness and color unevenness, and high output light emission. It is an object of the present invention to provide a light-emitting device capable of realizing any one of them, preferably all of them.

The present invention can solve the above problems by the following means (1) to (14).
(1) A light transmissive member having a light emitting surface and a light receiving surface of a light emitting device, an emission surface coupled to the light receiving surface, and a surface facing the emission surface and provided with a semiconductor element structure. A light-emitting element including a light-transmitting substrate, a light-reflective material, exposing the light-emitting surface, a side surface of the light-emitting element, and a part of the light-transmitting member extending from the side surface The light emitting element includes a separation part and the semiconductor element structure separated from each other by the separation part on the surface of the light-transmitting substrate. A plurality of light emitting structure portions provided in each region of the structure, and the covering member covers the separation portion and the light emitting structure portion adjacent to the separation portion, on the covering side surface A light emitting device having a light reflecting portion.
(2) The light emitting device according to (1), wherein the light emitting structure is provided in each of the semiconductor element structures separated from each other so that the light can be independently emitted by the separating unit.
(3) The light-emitting device according to (1), wherein the light-emitting structure portions are separated from each other by the separation portion, and are connected to each other in a part of the semiconductor element structure and can emit light simultaneously.
(4) The light emitting device according to any one of (1) to (3), wherein the semiconductor device structure has an element structure surface in which the light emitted from the light emitting structure portion can be emitted to the outside of the light emitting device. apparatus.
(5) The light emitting device according to any one of (1) to (4), wherein the light emitting element has, on the side surface, an element structure surface capable of emitting light from the light emitting structure portion to the outside of the light emitting element. .
(6) Said (1)-(5) in which the surface of the said translucent board | substrate is exposed to the bottom face of the said isolation | separation part.
The light emitting device according to any one of the above.
(7) In the above (6), the covering member covers the surface of the translucent substrate in the separating portion, and the light reflecting portion is provided at an interface between the covering member and the surface of the translucent substrate. The light emitting device according to 1.
(8) The surface of the translucent substrate has an uneven structure, and the semiconductor element structure on the uneven structure,
The light emitting device according to any one of (1) to (7), wherein the separating member is disposed, and the covering member is provided on a surface of the translucent substrate exposed on a bottom surface of the separating member. apparatus.
(9) The light emitting device according to any one of (1) to (8), wherein the covering member continuously covers the side surface of the semiconductor element structure and the light transmitting substrate from the side surface of the light transmitting member. apparatus.
(10) The separation unit includes an element structure surface capable of emitting light emitted from the light emitting structure part to the outside of the light emitting element, or the surface of the element structure and the surface of the translucent substrate capable of emitting the light emission to the outside of the light emitting element. The light emitting device according to any one of (1) to (6), wherein the covering member covers the separation portion and the semiconductor element structure through a gap in the separation portion.
(11) The semiconductor element structure has an element structure surface capable of emitting light emitted from the light emitting structure part to the outside of the light emitting element, and the covering member covers the element structure surface through a gap; The light emitting device according to any one of (1) to (10), wherein the light emitting device has a region to be directly covered.
(12) The light transmission member is a wavelength conversion member excited by the light emitting element (1) to (1) to
The light emitting device according to any one of (11).
(13) The light emitting device according to (12), wherein the wavelength conversion member is a plate-like body having first and second main surfaces facing each other.
(14) The semiconductor element structure includes a wiring board that includes a wiring that traverses the separation portion, and that is mounted by connecting the plurality of light emitting structure portions by the wiring, and the covering member crosses the separation portion. (1) to (1) covering the wiring to be performed and having a light reflecting portion in the separating portion
13) The light-emitting device as described in any one of 13).

In the present invention, each light emitting structure is provided by providing a separating portion provided inside the element and a light reflective covering member covering the light emitting structure portion between the plurality of light emitting structure portions on the surface of the light transmitting substrate. The light emitted from the portion is suitably diffused within the substrate to produce light with suppressed luminance unevenness, and suitable optical coupling with the translucent member and further the wavelength conversion member can be realized, and the color unevenness can be suppressed. In addition, a light-emitting device that can be driven at a high input voltage and can emit light with high output with less luminance unevenness and color unevenness can be provided as a light source suitable for a power source for lighting and a projector.

Schematic top view (b) of a light emitting device according to an embodiment of the present invention, a schematic cross sectional view (a) taken along the line AA, and a schematic plan view of a light emitting element mounted on the light emitting device (c) ). They are the schematic sectional drawing (a) which expanded the light emitting element periphery of the light-emitting device which concerns on one embodiment of this invention partially, and the schematic plan view (b) of this light emitting element. It is a schematic plan view which shows the planar shape of the light emission structure part of the light emitting element used for the light-emitting device which concerns on one embodiment of this invention, and a isolation | separation part. It is a partial schematic sectional drawing of the light emitting element used for the light-emitting device which concerns on one embodiment of this invention. 1 is a schematic cross-sectional view illustrating a part of a light emitting device according to an embodiment of the present invention. It is a schematic sectional drawing explaining the light-emitting device which concerns on one embodiment of this invention. BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic sectional drawing (a) explaining the one part of the light-emitting device concerning one embodiment of this invention, and the partial schematic plan view of the light emitting element mounted in this light-emitting device. The light emitting device according to an embodiment of the present invention, a schematic top view (b) for explaining the mounting substrate and the mounting state, a schematic cross sectional view (a) of the light emitting device in the AA cross section, and the light emitting device It is a schematic plan view (c) of the mounted light emitting element. It is a schematic sectional drawing explaining the light-emitting device which concerns on the comparative example of this invention. It is figure (a), (b) which each shows the light emission chromaticity distribution of the light-emitting device which concerns on the Example and comparative example of this invention.

Hereinafter, embodiments of the invention will be described with reference to the drawings as appropriate. However, the light-emitting device described below is for embodying the technical idea of the present invention, and the present invention is not limited to the following. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described below are not intended to limit the scope of the present invention only to specific examples unless otherwise specified. Only. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, each element constituting the present invention may be configured such that a plurality of elements are constituted by the same member and the plurality of elements are shared by one member, and conversely, the function of one member is constituted by a plurality of members. It can also be realized by sharing. Similarly, the embodiments described below can be applied by appropriately combining the components and the like unless otherwise specified.

<Embodiment 1>
FIG. 1 is a schematic view of a light emitting device according to Embodiment 1 of the present invention, FIG. 1 (a) is a schematic cross-sectional view taken along line AA of FIG. 1 (b), and FIG. c) is a schematic plan view of the mounted light emitting element, and FIG. 2 is a schematic sectional view of the periphery of the light emitting structure of the light emitting element. 1 and 2 mainly includes a light emitting element 10, a mounting substrate 50 on which the light emitting element is mounted, a light transmitting member 20 that transmits light emitted from the light emitting element, a light emitting element, and And a light-reflective coating member 40 that covers a part of the light transmission member.

The light transmitting member 20 includes a surface 21 to be a light emitting surface 90 of the light emitting device and a light receiving surface 2 facing the surface 21.
2. As shown in the figure, for example, a plate-like body, the light emitted from the light emitting element 10 is received by the light receiving surface 22, that is, combined with each other, and the light passes through the inside and is emitted from the surface 21 to the outside of the apparatus. Moreover, it can be set as the wavelength conversion member containing the fluorescent substance which makes the light radiate | emitted from the light emitting element 10 primary light, is excited by this primary light, and can discharge | release the secondary light of the wavelength conversion light. In this example, primary light and secondary light are emitted from the light emitting surface 90.

The light emitting element 10 includes a light-transmitting substrate 1 having an emission surface joined to a light receiving surface 22 of a light transmission member and a surface provided with the semiconductor element structure 11 so as to face the emission surface. Further, on the surface of the single translucent substrate 1, a separation portion 13 and a plurality (four in FIG. 1) of light emitting structure portions 12 in which the semiconductor element structures 11 are separated from each other by the separation portion, Have. As shown in the figure, here, the element structures 11 are separated from each other on the substrate 1 to be insulated light emitting structures. The light emitting element 10 includes protruding electrodes (on the wirings 51 and 52 of the mounting substrate 50).
Each light emitting structure 12 is flip-chip mounted with a conductive adhesive 60 such as a bump).
Are electrically connected to each other by the wiring 52 of the mounting substrate 50, and the apparatus 100 also includes a wiring 51 serving as a terminal for external connection.

The covering member 40 is made of an insulating material such as a resin containing the light reflective material 45,
The inner side of the frame 55 provided on the mounting substrate 50 is filled to expose the peripheral portions of the light emitting element 10 and the light transmitting member 20, more specifically, the surface 21 of the light transmitting member, and the side surface of the light emitting element 10. When,
It extends from the side surface and covers a part of the light transmitting member 20. The covering member 40 covers the separating portion 13 and the light emitting structure portion 12 adjacent to the separating portion, and has a light reflecting portion on the covering-side surface. In this example, the covering member is a reflecting member containing translucent particles in a translucent base material, more specifically, a member that scatters and reflects light with particles. Furthermore, the light emitting element 10
Is provided with an element structure surface capable of emitting light emitted from the light emitting structure part 12 to the outside of the element, and the surface is provided in the separation part, more specifically, the side surface 2A constituting the inner wall of the separation part 13 and Thus, the side surface of the light emitting structure portion 12 adjacent to the separation portion is a surface that can emit light, and the covering member 4
The light is reflected by 0 and is similarly reflected. That is, on the wiring side and the electrode formation side facing the emission surface side of the element 10, the element 10 is provided with a light-reflective coating member that covers the element surface. The structure surface is provided with a light reflection function, and a light reflection portion is formed on each surface and in a separation portion provided with the surface.

The mounting substrate 50 crosses the separating portion 13 and connects the adjacent light emitting structure portions 12 to each other by the wiring 52, and the light-reflective covering member 40 is an element facing the wirings 51 and 52 on the wiring side. 1
1. Cover the surface of the light emitting structure 12, particularly the surface of the element structure capable of emitting light. Light emission to the wiring side and light absorption / transmission by the wiring / substrate 50 can be reduced by this wiring and the covering member provided on the element structure side of the opposing surface. On the other hand, in this example, the surface of the substrate 1 exposed at the bottom surface of the separation part is a surface from which the light emission of the element structure 11 can be emitted, and can be reflected by the covering member of the separation part, thereby increasing the light extraction efficiency, Moreover, the fall of the brightness | luminance on the isolation | separation part 13 can be suppressed.

Therefore, even if the semiconductor element structure 11 is separated into a plurality of parts by the separation part 13, the region located in the separation part 13 in the translucent substrate 1 can function as a return light reflection area, and further adjacent to each other. It is possible to function as a light overlapping region where light emitted from each light emitting structure portion 12 is overlapped. Accordingly, the light transmissive member 2 is formed by sufficiently diffusing light in the light transmissive substrate 1 by using the single light transmissive substrate 1 as a light guide region and a light diffusion region common to the light emitting structures 12.
Can be optically coupled to 0, and furthermore, by combining the light conversion member, it can function in the same manner with respect to the return light to the substrate 1, in addition to the light of the light emitting element. Color unevenness can be reduced.

The separation part 13 in this example functions as an insulating region for controlling the current flowing through each light emitting structure part 12, and each light emitting structure part 12 is provided so as to be able to emit light independently by the separation part 13. ing. This reduces the area of the single light emitting structure 12 and promotes current diffusion,
Each light emitting structure 12 is preferable because it can emit light having a uniform light intensity distribution in the surface. In addition, the light emitting structure 12 is separated into individual element structures, and further, the element structure is separated, so that the problem of light absorption due to light propagation in the element structure 11 can be solved as compared with the case where the element structure 11 is not separated or separated.
The light extraction efficiency to the outside of the element structure 11 can be increased, and it can be further increased by the synergistic effect by the reflection function of the covering member. And each such light emitting structure 1
2 is applied to the light separating member 13 and the light reflecting function on the surface from which the element structure can be emitted, and the diffusion and superimposing functions inside the translucent substrate 1. Light having a substantially uniform luminance distribution can be coupled to the surface 22. In addition, by enhancing the functions of the light emitting structures 12 that are electrically insulated from each other and further connecting each other in series by a wiring 52, the device can be driven with a relatively high input voltage and suitable for high output of the device. You can do it.

In particular, since the separating portion 13 is provided so that the surface of the translucent substrate 1 is exposed, the light emitting structure portions 12 are separated from each other both physically and electrically, and can be used as independent micro light sources. The effect can be suitably obtained. Further, the covering member 40 covers the bottom surface of the separating portion 13 and provides a light reflecting portion at the interface with the bottom surface, and further at the interface between the covering member 40 and the surface of the translucent substrate 1 on the bottom surface of the separating portion. It is preferred that Thereby, the light reflectivity of the bottom surface of the separation part 13 and the side surface of the light emitting structure part 12 adjacent to the separation part 13 is enhanced, and light is efficiently extracted from the light emitting structure part 12 to the translucent substrate 1. Light can be suitably superimposed on the substrate 1.

2A and 2B, the surface of the light-transmitting substrate 1 has a concavo-convex structure 1A, and the element structure, the light emitting structure portion, and the separation portion are on the concavo-convex structure. It is preferable to arrange | position. Compared with the case of a flat surface, the uneven structure 1A of the translucent substrate 1 scatters the light emitted from each light emitting structure portion 12 or its return light by the uneven structure 1A and diffuses the light within the substrate. And more uniform light can be coupled to the light transmission member 20. The concavo-convex structure in the separation part is scattered by being superimposed on the scattering action by the covering member, and the action effect of the separation part is preferably enhanced, and more preferably, the surface of the substrate 1 is exposed on the bottom face of the separation part. . Such a concavo-convex structure 1A is preferably provided over substantially the entire surface of the surface on which the semiconductor element structure 11 is provided. As described above, any one of the separation part, the light emitting structure part, and the element structure is further provided. The form provided in a part may be sufficient. Alternatively, the light-transmitting substrate 1 may be formed on the light-exiting surface side, but the surface on which the semiconductor element structure 11 far from the light-receiving surface 22 of the light-transmitting member is provided can couple more uniform light to the light-transmitting member 20. In addition, the coupling efficiency at the light receiving surface can be increased. When the surface on which the semiconductor element structure 11 is provided has the concavo-convex structure 1A, the concavo-convex structure 1A having a regular pattern is preferably used so that the semiconductor crystal constituting the semiconductor element structure 11 can be epitaxially grown with good crystallinity The light diffusing action can be exerted substantially uniformly on the light emitted from the light emitting structure 12. Not limited to this, an irregular pattern may be used, and the planar shape of each concave portion and convex portion is preferably an island shape such as a circular shape or a polygonal shape as shown in the figure. In addition, a combination of these shapes or an irregular shape may be used, and the cross-sectional shape preferably includes an inclined side surface and a flat surface for crystallinity as shown in the figure, and other uneven structures. It may be.

Further, the covering member 40 continuously covers the side surfaces of the semiconductor element structure 11 and the translucent substrate 1, that is, the side surfaces of the light emitting element 10 from the side surfaces of the light transmitting member 20, so that the light emitting device 100 can transmit light. A suitable surface-emitting light-emitting device having the surface 21 of the member as a main light extraction window is obtained. Thereby, the primary light emitted from each light emitting structure 12 and diffused and superimposed in the light transmitting member 20 can be converged and efficiently coupled to the light transmitting member 20. Also, the primary light that diffuses and leaks to the side of the light transmitting member 20 and the secondary light that is the converted light are made uniform by the above superimposing action, the light is uniformed, the color is uniformed, and reflected in the light extraction direction to be combined. Can
While increasing the luminance in the front direction of the apparatus, it is possible to obtain a light distribution with reduced color unevenness.

(Separation part)
The separation part 13 can be formed, for example, by forming the semiconductor element structure 11 over substantially the entire surface of the translucent substrate 1 and then removing a part thereof by etching, scribing or the like. Alternatively, a method may be used in which a protective film is formed on the translucent substrate 1 and the semiconductor element structure 11 is formed in a region partitioned by the protective film.

Since the separation portion 13 partially removes the semiconductor element structure 11, the smaller the formation region, the smaller the emission area and thus the lowering of the luminous flux can be suppressed, and the separation portion 13 can be formed in a groove shape. It is preferable (hereinafter, the “separation part” may be referred to as “separation groove” in the present specification). The upper limit of the width of the separation part is preferably 100 μm or less, and more preferably 20 μm or less. The lower limit is not particularly limited, but is limited by photolithography resolution, wiring, electrode pitch, and the like, and is, for example, 3 μm or more.

The cross-sectional shape of the separation portion 13, in other words, the side surface of the separation groove 13, that is, the side surface of the light emitting structure portion 12 may be substantially perpendicular to the mounting surface of the light emitting structure portion 12. Such an effect is obtained. As shown in FIG. 2A, if the light emitting structure 12 has an inclined surface (forward tapered surface) that spreads from the mounting surface toward the translucent substrate 1, a large amount of light is transmitted by reflection on the inclined surface. It can be taken out to the optical substrate 1 side, and can emit light with a high luminous flux. Similarly, even when a part of the substrate 1 constitutes the side surface of the separation portion, the side surface is inclined from the surface perpendicular to the substrate to the wiring side, specifically, from the wiring side to the substrate side in the cross section. It is preferable to incline so that a groove part inner wall may become a forward taper. Further, the separation distance (the width of the separation groove) between the element structure 11 and the light emitting structure portion 12 is smaller on the bottom surface side (substrate surface side) than the mounting side, and is emitted from each light emitting structure portion 12 in the substrate of the separation portion 13. The light of the light emitting structure is preferably coupled to the substrate by reflection and condensing effect by the inclined surface, and combined with the scattering action, so that the suitable light is superimposed in the substrate. can get. If a reverse inclined surface (reverse tapered surface) is used, each light emitting layer of the light emitting structure 12 can be made larger than the separation width on the bottom surface, and the output can be increased. Moreover, the light distribution of the light emitted from the light emitting structure 12 can be widened by the diffraction effect of the light on the inclined surface. Further, the side surface of the separation groove 13, that is, the side surface of the light emitting structure portion 12 may be rough or uneven, and light can be scattered on the side surface of the light emitting structure portion 12 to widen the light distribution. The light emitting structure of the separation part, the separation form of the element structure, and the covering form of the covering member in the separation part in the present invention will be described in the following embodiments.

The planar shape of the separation portion 13 in the present invention, that is, the shape of the light emitting structure section and element structure partitioned thereby, can be various forms, and as shown in FIG. 1, the light emitting structure section and elements arranged in a line. In addition to the structure, it can be formed into a desired planar shape and pattern. As shown in the present embodiment in FIG. 1C, when the stripe shape is used, the separation unit 1 is the simplest separation unit.
Since the number and width of 3 can be made relatively small, a decrease in luminous flux can be suppressed. Separator 1
Since 3 is linear, the covering member 4 extends to the inner side of the light emitting element 10 even if the width of the separation portion is reduced.
Easy to fill 0. FIG. 3 is a schematic top view showing another example of the planar shape of the separation portion 13 of the light emitting device 10 according to an embodiment of the present invention. As shown in FIG.
Then, a plurality of rows of rows are arranged, and a rectangular light emitting structure 12A is provided as in the present embodiment. In this case, in addition to the linear separation part 13 sandwiched between the adjacent light emitting structure parts 12A, the separation part has an intersecting part, and the four light emitting structure parts 12A adjacent to each other at the cross-like intersecting part. Is provided. Further, as shown in FIGS. 3B to 3D, triangular light emitting structure portions 12B, 12C, and 12D are provided by further forming diagonally inclined separating portions in addition to the lattice-shaped separating portions. ing. Thus, unlike the form shown in FIG. 1 (c), three or more light emitting structure portions have the intersections of the adjacent separation portions, and particularly FIG.
In the example shown in (b), there are intersecting portions where four and eight separating portions intersect, and suitable luminance and color unevenness are made uniform by the above-described effects in the separating portion, the element structure located in the separating portion, and the substrate. Thus, the area of the light emitting surface of the device can be increased. On the other hand, as shown in the figure, by forming a triangular shape or a polygonal shape having five or more sides, the side surfaces of the light emitting structure portion and the inner wall surface of the separation portion are parallel to each other between the facing separation portions. In addition, since the surfaces are not perpendicular to each other but are inclined to each other, the above-described reflection function in the separation groove, the substrate located there, and the superposition function of the element structure can be further enhanced. Here, the light-emitting structure part provided with the inner wall surface parallel to each other and the side surfaces facing each other across the separation part is described here, but the shape of the separation part is not limited to this, but a circular shape, a polygonal shape, a curved shape Alternatively, various shapes such as a combination of them may be used, and the shape of the light emitting structure is the same. Each light emitting structure is connected in series as shown in FIG.
Various circuit structures can be formed according to the power source, such as parallel connection, bridge connection, combinations thereof, etc., and depending on the power source, such as reverse parallel connection such as AC power supply. In a complicated circuit such as a combination structure, an anti-parallel structure, a bridge structure, etc., it is preferable because adjacent light emitting structures can be increased.

  Next, each component of the light emitting device of the present invention will be described in detail below.

(Light emitting element)
As the light-emitting element 10, a known element, specifically, a semiconductor light-emitting element can be used, and a light-emitting element 10 having a plurality of light-emitting structure portions 12 provided on one translucent substrate 1 so as to be separated from each other can be used. In particular, a GaN-based compound semiconductor is preferable because it can emit short-wavelength visible light or ultraviolet light that can excite the fluorescent material efficiently. Specific emission peak wavelength is 240 nm or more 5
It is 60 nm or less, preferably 380 nm or more and 470 nm or less. In addition, Zn
Se-based, InGaAs-based, and AlInGaP-based semiconductor light emitting devices may also be used.

(Light emitting element structure)
As illustrated in FIG. 4, the element structure 11 and the light emitting structure 12 by the semiconductor layer are constituted by at least a first conductivity type (n-type) layer 2 and a second conductivity type (p-type) layer 4, and further between them. A structure having the active layer 3 is preferable. The electrode structure has a first conductivity type (negative) and a second on one main surface side.
A coplanar electrode structure in which both conductive type (positive) electrodes 6 and 7 are provided is preferable, but a counter electrode structure in which electrodes are provided to face each main surface of the semiconductor layer may be used. The mounting form of the light emitting element 10 is also the substrate 1 facing the electrode forming surface as the mounting surface, for example, in the above-mentioned same-surface electrode structure.
Flip chip mounting with the side as the main exit surface is preferable for optical connection between the exit surface and the light transmitting member 20. In addition to this, the electrode forming surface side is the main emission surface, and the light transmission member is mounted on it, face-up mounting, flip chip mounting on the light transmission member with wiring structure, and light transmission with the above-mentioned counter electrode structure It is possible to connect the member and the mounting substrate, and it is preferable to mount the embodiment in which the light emitting element and the light transmitting member are not provided with wiring and electrodes. Note that the growth substrate 1 of the semiconductor layer 11 may be removed when the light emitting element structure is not formed, and a support substrate such as a conductive substrate or another translucent member is added to the semiconductor layer from which the growth substrate has been removed. -It is also possible to have a structure in which substrates are bonded. The light transmitting member 20 can also be used for this support substrate, glass,
An element having a structure in which a semiconductor layer is bonded and covered with a light transmitting member such as a resin and supported may be used. The removal of the growth substrate can be performed by peeling, polishing, or LLO (Laser Lift Off) by mounting or holding the growth substrate on a support, device, or submount, for example. In addition, the light emitting element 10 can have a light reflecting structure. Specifically, of the two main surfaces of the semiconductor layer 11 facing each other,
The other main surface facing the light extraction side (outgoing surface side) is the light reflecting side (lower side in FIG. 1),
A light reflecting structure can be provided in the semiconductor layer on the light reflecting side or in an electrode. As an example of the light reflecting structure, a structure in which a multilayer reflective layer is provided in the semiconductor layer, or Ag, Al on the semiconductor layer
There is a structure in which an electrode having a highly light-reflective metal film or the like, a dielectric multilayer film, and a reflective layer are provided.

(Nitride semiconductor light emitting device)
As an example of the light emitting element 10, in the nitride semiconductor light emitting element 10 of FIG. 4, an n-type semiconductor layer that is the first nitride semiconductor layer 2 and the active layer 3 are formed on the C-plane sapphire substrate that is the growth substrate 1. The light emitting layer and the p-type semiconductor layer which is the second nitride semiconductor layer 4 are epitaxially grown in this order. Then, a part of the n-type layer 2 is exposed to form an n-type pad electrode, which is the first electrode 7, and a light-transmitting conductive layer 5 such as ITO is formed on almost the entire surface of the p-type layer 4. 6, a p-type pad electrode is formed. Further, the protective film 8 is n-type and the surfaces of the p-type pad electrodes 6 and 7 are exposed,
It is provided so as to cover the semiconductor layer. The n-type pad electrode 7 is formed of the light-transmitting conductive layer 5 as in the p-type.
You may form through. The growth substrate 1 is not only C-plane sapphire, but also R-plane and A-plane, an insulating substrate such as spinel (MgAl ₂ O ₄ ), silicon carbide (6H, 4H, 3C), Si, Z
There are semiconductor conductive substrates such as nS, ZnO, GaAs, GaN, and AlN. Examples of the nitride semiconductor, other general formula _{In x Al y Ga 1-xy} N (0 ≦ x, 0 ≦ y, x + y ≦ 1),
B, P, or As may be mixed. The n-type and p-type semiconductor layers 2 and 4 are not particularly limited to a single layer or multiple layers, and the active layer 3 preferably has a single (SQW) or multiple quantum well structure (MQW). As an example of the blue light emitting element structure 11, an n-type semiconductor layer such as Si-doped GaN is formed on a sapphire substrate via a nitride semiconductor underlayer such as a buffer layer, for example, a low-temperature growth thin film GaN and a GaN layer. N-type contact layer and GaN / InGaN n-type multilayer film layer are stacked, followed by an InGaN / GaN MQW active layer and a p-type semiconductor layer such as Mg
There is a structure in which a p-type multilayer layer of doped InGaN / AlGaN and a p-type contact layer of Mg-doped GaN are stacked.

(Light transmission member)
The light emitting device 100 of FIG. 1 includes a light transmitting member 20 that transmits light from the light emitting element 10. The light transmission member 20 is preferably a light conversion member having a wavelength conversion material capable of converting the wavelength of at least part of the light passing therethrough. For example, as in the embodiment, the primary light from the light source excites the phosphor as the wavelength conversion material in the light transmitting member 20 to obtain secondary light having a wavelength different from that of the primary light. Outgoing light having a desired hue can be realized by color mixing with light.

The light transmitting member 20 of the first embodiment has a surface 21 and a light receiving surface 22 that are smaller than the light emitting surface of the light emitting element 10 in a plan view from the surface 21 (light emitting surface 90), and the side surfaces thereof are light emitting elements 10. It is located inside the side surface (end surface). By narrowing the light emitting region with respect to the light emitting element 10, the luminance is relatively increased, the color mixture is made uniform, and the color unevenness is reduced. The protruding length of the side surface of the light emitting element with respect to the side surface of the light transmitting member is, for example, 0.25 times or more and 5 times or less, specifically 0.5 times or more, as compared with the thickness of the light transmitting member. 2 times or less. As an example, in the light emitting device of Example 1, the end of the light emitting element 10 protrudes from the end of the light transmitting member 20 with a width of about 100 μm. In addition, as shown in the second embodiment to be described later, the side surface of the light transmission member may protrude outward from the side surface of the light emitting element, and the light receiving surface 22 of the light transmission member is formed as in this example. The form made larger than the output surface of the light emitting element 10 may be sufficient. Since the light receiving surface 22 wider than the light emitting surface of the light emitting element 10 is optically connected through the light guide member, there is little loss. If it is this form, the protrusion length is 0.25 times or more and 5 times or less, for example, compared with the thickness of a light emitting element, specifically 0.5 times or more and 2 times or less. Further, if the side surface of the light transmitting member 20 is located on the same plane as the side surface of the light emitting element 10, the amount of light from the light emitting element 10 is insufficient at the outer edge portion of the light transmitting member, resulting in color unevenness. It can suppress becoming easy.

Here, as a translucent material used as a base material of the light transmissive member 20, the material similar to the following coating member 40 can be used, for example, inorganic substances, such as resin or glass, can be used.
Even when the conversion function is not provided, it is preferable to use the same material as the light transmission member for light conversion, excluding or replacing the phosphor. Further, when the light transmitting member is plate-like as in the embodiment, both the front surface 21 and the light receiving surface 22 are substantially flat surfaces, and furthermore, both opposing surfaces are substantially parallel to each other. The efficiency of optical coupling through the light guide member of the present invention is increased, and joining is facilitated, which is preferable. On the other hand, it is not limited to a plate shape, various shapes or forms such as a form having a curved surface in whole or in part, a surface form such as an uneven surface, for example, a shape for condensing and dispersing,
For example, it may be an optical shape such as a lens shape. Further, as a wavelength conversion function, in addition to emitting primary light of the light emitting element and mixed light of the converted light (secondary light), for example, converted light by ultraviolet light of the light emitting element or mixed light by a plurality of converted lights In addition, a light-emitting device that mainly emits secondary light converted from primary light can be used.

The light transmissive member 20 having a wavelength conversion function is specifically a glass plate, a material provided with the light conversion member, or a phosphor crystal of the light conversion member or a single crystal having a phase thereof, a polycrystal,
Sintered body, aggregate, porous material, and translucent material, such as translucent resin, with amorphous body, ceramic body, or phosphor crystal particles and appropriately added translucent material , Impregnated materials, or translucent members containing phosphor particles, for example, molded products of translucent resin. In addition, it is preferable from a heat resistant viewpoint that the light transmissive member 20 is comprised with an inorganic material rather than organic materials, such as resin. Specifically, it is preferably made of a translucent inorganic material containing a phosphor, and in particular, a sintered body of a phosphor and an inorganic substance (binding material, binder), or a sintered body or crystal made of a phosphor. This increases reliability. In the example, Y
When using an AG phosphor, in addition to YAG single crystals and high-purity sintered bodies, alumina (Al ₂
From the viewpoint of reliability, a sintered body of YAG / alumina having O ₃ ) as a binder and a sintered body having glass as a binder are preferable. Further, by forming the light transmitting member 20 in a plate shape, the coupling efficiency with the emission surface of the light emitting element 10 configured in a planar shape is good, and the light transmitting member 20 can be easily positioned so as to be substantially parallel to the main surface of the light transmitting member 20. Can be combined. In addition, by making the thickness of the light transmissive member 20 substantially constant, the wavelength conversion amount of the light passing therethrough can be made substantially uniform, the ratio of color mixing can be stabilized, and color unevenness at the site of the light emitting surface 90 can be suppressed. Therefore, in the case where a plurality of light emitting elements 10 are mounted on one light transmitting member 20, there is little unevenness in luminance and chromaticity distribution in the light emitting surface 90 due to the arrangement of the individual light emitting elements 10, and it is substantially uniform and high. Luminous light emission can be obtained. Note that the thickness of the light transmitting member 20 having a wavelength conversion function is preferably 10 μm or more and 500 μm or less, and more preferably 50 μm or more and 300 μm or less, in terms of light emission efficiency and chromaticity adjustment.

The wavelength conversion member can be suitably combined with a blue light emitting element to emit white light. As a typical phosphor used for the wavelength conversion member, a YAG phosphor (yttrium, aluminum, Garnet) and LAG-based phosphors (lutetium / aluminum / garnet), particularly in the case of high brightness and long time use (R
e _1-x Sm _x ) ₃ (Al _1-y Ga _y ) ₅ O ₁₂ : Ce (0 ≦ x <1, 0 ≦ y ≦ 1, where Re is
It is at least one element selected from the group consisting of Y, Gd, La, and Lu. Etc.) are preferred. YAG, LAG, BAM, BAM: Mn, (Zn, Cd) Zn: Cu, CC
A, SCA, SCESN, SESN, CESN, CASBN and CaAlSiN ₃ : Eu
A phosphor containing at least one selected from the group consisting of can be used. The wavelength conversion member is
In addition to the light transmitting member, for example, it can be provided between the light transmitting member and the light emitting element, in the coupling member, and between the light emitting element and the covering member. Similarly, the light transmitting member, the wavelength converting member, and the sintered body can be disposed in the light emitting device. It is also possible to increase the reddish component using a nitride-based phosphor having yellow to red light emission, and to realize illumination with high average color rendering index Ra, light bulb color LED, and the like. Specifically, by adjusting the amount of phosphors having different chromaticity points on the CIE chromaticity diagram according to the light emission wavelength of the light emitting device, the phosphors are connected with each other on the chromaticity diagram. Any point can be made to emit light. In addition, nitride phosphors, oxynitride phosphors, and silicate phosphors that convert near-ultraviolet to visible light into a yellow to red region can be used. For example, L ₂ SiO ₄ : Eu (L is an alkaline earth metal), particularly (Sr _x Mae _1-x ) ₂ SiO ₄ : Eu (Mae is an alkaline earth metal such as Ca and Ba) and the like. Nitride phosphors, oxynitrides (oxynitrides)
Examples of the phosphor include Sr—Ca—Si—N: Eu, Ca—Si—N: Eu, and Sr—Si—N.
: Eu, Sr-Ca-Si-ON: Eu, Ca-Si-ON: Eu, Sr-Si-O
-N: Eu and the like, and as the alkaline earth silicon nitride phosphor, the general formula LSi ₂ O ₂ N ₂
: Eu, general formula _{L x Si y N (2 /} 3x + 4 / 3y): Eu or _{L x Si y O z N (} 2 / 3x + 4 / 3y-2 / 3z):
Eu (L is Sr, Ca, or any one of Sr and Ca).

(Coating member)
As shown in FIG. 1, the covering member 40 covers a part of the light transmitting member 20, and specifically covers at least a part of the side surface of the light transmitting member 20. In the present invention, since the covering member is suspended from the element or the like to prevent the formation of a light leakage path, it is preferable that the reflectance of the covering member is higher than that of the substrate and the wiring provided thereon. Further, the covering member 40 containing the light reflecting material is preferably a translucent resin material as its base material, and preferably uses a silicone resin composition, a modified silicone resin composition, etc., an epoxy resin composition, An insulating resin composition having translucency such as a modified epoxy resin composition and an acrylic resin composition can be used. A covering member having excellent weather resistance, such as a hybrid resin containing at least one of these resins, can also be used. Furthermore, inorganic materials having excellent light resistance such as glass and silica gel can be used. In addition, by molding a resin material, it can be molded into a desired shape and a desired region can be covered. In the present invention, the surface of the light emitting element, the adhesive member, and the light transmitting member of the light source section, particularly the side surfaces thereof are formed. it can. In addition, the surface on the light emitting surface side can also have a desired shape, and can be a concave or convex curved surface in addition to a flat surface shape as illustrated. In the first embodiment, a silicone resin is used as a covering member from the viewpoint of heat resistance and weather resistance.

The covering member 40 includes at least one light reflective material 45 in the base material. By including the light reflective material 45, the reflectance of the covering member 40 is increased, and more preferably, when a low-absorbing particle is used, light absorption and loss are reduced, and the covering member having light scattering properties it can. The light reflecting material 45 contained in the covering member 40 is Ti, Zr, Nb, Al, Si.
One oxide selected from the group consisting of AlN and MgF, specifically TiO ₂ , ZrO ₂ , Nb ₂ O ₅ , Al ₂ O ₃ , MgF, AlN, SiO _2. It is at least one selected from the group consisting of: The particles of the light reflecting material are Ti, Zr, Nb
The oxide is preferably one oxide selected from the group consisting of Al, so that the material can have high reflectivity and low absorptivity, and the difference in refractive index from the base material, particularly the translucent resin, can be increased. The covering member 40 can also be constituted by a molded body made of the light reflecting material, specifically, a porous material such as an aggregate obtained by agglomerating the particles or a sintered body, In addition, a molded body by a sol-gel method may be used, which is preferable because the difference in refractive index between the light reflecting material and the air in the porous body can be increased, and the light reflecting property can be increased. . On the other hand, compared with a covering member provided with a base material such as the resin, it can be molded into a desired shape and controllability of the covering region is good, and sealing performance and airtightness can be improved. Then, it is preferable to use a covering member provided with the base material. Also, considering the characteristics of both covering members, a composite molded body of both can be formed. For example, the outer surface side of the porous molded body is impregnated with resin, and the inner surface side of the light emitting element side is porous. The structure can be made. As described above, the covering member or the surrounding body may be configured such that the inner region communicates with the outside or is gas permeable and at least does not leak light.

In the covering member 40 containing the light reflective material 45 in the base material described above, the depth at which light leaks differs depending on the concentration and density of the covering member 40. Therefore, the concentration and density are appropriately set according to the shape and size of the light emitting device. Adjust it. For example, when the thickness is reduced with a relatively small light emitting device, it is preferable to provide the light-reflecting material 45 with a high concentration. On the other hand, in the manufacturing process such as the preparation of the covering member 40 containing the light reflecting material 45, the application of the raw material, and the molding, the concentration is adjusted so as to be suitable for it. The same applies to the porous body. As an example, in the case of the embodiment, it is preferable that the concentration of the light-reflecting material 45 is 20 weight percent (wt%) or more, and the thickness is 20 μm or more. The emitted light with high directivity can be obtained, and the underfill can be easily formed by the covering member with an appropriate viscosity. Moreover, if the density | concentration of a light reflective material is made high, the thermal diffusibility of a coating | coated member can be improved.

The covering member forming region is provided with a covering member 40 on at least the side surface of the light transmitting member 20, preferably also covering the side surface of the light emitting element 10, and more preferably, the light emitting surface in the light source unit including the light transmitting member and the light emitting element. The same applies to the case where the other members are exposed and covered with the adhesive member 30 interposed therebetween. As a result, light can be prevented from leaking from the side surface of the light transmitting member, and if the light converting member has a relatively high intensity from the side surface, light having a color difference can be suppressed, and radiation light can be prevented. The directivity can be improved, and luminance unevenness and color unevenness can be reduced. Moreover, the directivity and the brightness can be improved by covering the side surfaces of the respective members and elements and restricting them to the light extraction direction side. In addition, when the light transmitting member 20 contains a wavelength conversion material, the heat generation of the wavelength conversion material is particularly significant, which can be improved. If the side surface of the light transmitting member 20 is covered with the covering member 40 and the surface 21 is exposed, the outer surface shape is not particularly limited, and the exposed surface is more than the surface 21 of the light transmitting member as shown in FIG. A recessed structure may be used. By projecting the light emitting surface 90, light shielding by the covering member 40 can be avoided, and substantially the same surface may be used, and a desired surface can be obtained.

(Additive components)
In addition to the light-reflective material 45 and the light conversion member, a viscosity extender or the like can be appropriately added to the covering member 40, whereby a desired emission color, color of these members or the surface of the device, for example, high contrast Thus, a light emitting device having a desired directional characteristic such as black for conversion to black can be obtained.
Similarly, various colorants can be added as filter materials for cutting unnecessary wavelengths. Other parts,
The same applies to light transmissive materials such as light transmissive members and adhesive members.

(Adhesive member)
The adhesive member 30 is used as an adhesive that is interposed between the light emitting element 10 and the light transmitting member 20 and fixes both members. The adhesive member is preferably made of a material having translucency, capable of guiding the emitted light of the light emitting element 10 to the light transmitting member side, and optically coupling both members. Examples of the material include resin materials used for the above-described members, and a translucent thermosetting resin such as a silicone resin or an epoxy resin is preferable. A silicone resin is preferable because it is excellent in heat resistance and light resistance. In addition, it is preferable to use a silicone resin because the effect of the fluorine-based mold release agent is high. Furthermore, if it is a dimethyl-type silicone resin, it is excellent in reliability, such as high temperature tolerance, and if it is a phenyl-type silicone resin, the refractive index can be made high and the extraction efficiency of the light from the light emitting element 10 can be improved.

(Mounting board 50)
On the other hand, in the light emitting device 100 of FIG. 1, the substrate 50 on which the light emitting element 10 is mounted is as follows.
It is possible to use a wiring having at least a front surface connected to the electrode of the element, and a wiring for external connection may be provided on the back surface or the like. The substrate material is, for example, aluminum nitride (AlN), single crystal, polycrystal, sintered substrate, other materials such as ceramics such as alumina, glass, semi-metal or metal substrates such as Si, and laminates thereof. Bodies and composites can be used, and metallic and ceramic materials are preferred because of their high heat dissipation. Note that the substrate 50 may not have wiring. For example, in the form in which the growth substrate side is mounted with the element of FIG. 4 and the electrode of the element is wire-connected to the electrode of the apparatus, or the light-transmitting member is provided with wiring. But you can. Moreover, the form which covers the outer side surface of the mounting board | substrate 50 other than the form in which the coating | coated member 40 is provided on the mounting board | substrate 50 like the light-emitting device to show in figure may be sufficient. Further, it is preferable that at least the surface of the mounting substrate 50 is made of a highly reflective material. As shown in FIGS. 1 and 2, the light emitting element 10 is bonded onto the wiring 51 by a conductive adhesive 60 and is electrically connected to the outside. As the conductive adhesive 60, solder, Ag paste, Au bump, or the like can be used.

(Frame)
The light emitting device 100 illustrated in FIG. 1 includes a frame body 55, and the frame body 55 also functions as a holding member for the covering member 40. The frame body 55 can be formed of ceramic, resin, or the like. Alumina having high light reflectivity is preferable, but not limited to this as long as a reflective film is formed on the surface. If it is resin, besides using screen printing or the like, the molded body may be bonded to the mounting substrate. Further, it is preferable to increase the reflectance by using a light reflective material as in the covering member 40. Also,
Like the additive member, the frame may be colored according to the purpose. In addition, this frame can also be removed after filling or forming the covering member. Further, the frame body may be formed integrally with the mounting substrate of the light emitting element, such as a laminated substrate, an apparatus base having a cavity structure with a base material, and the like.

(Method for manufacturing light emitting device)
An example of a method for manufacturing the light emitting device 100 shown in FIG. 1 will be described below. First, bumps 60 are formed on the wiring 51 of the mounting substrate 50 or on the light emitting element 10, and the light emitting element 10 is flip-chip mounted. In this example, one light emitting element 10 is mounted side by side in a region corresponding to one light emitting device on the substrate 50 before separation. Next, the adhesive member 30 is applied to the emission surface side (growth substrate rear surface) of the light emitting element 10, the light transmitting member 20 is laminated, and the resin 30 is thermoset and bonded. Next, a resin constituting the covering member 40 is dropped by a dispenser (liquid metering discharge device) or the like so as to cover the side surface of the light transmitting member 20 in a frame 55 standing around the light emitting element 10. (Potting). The dropped resin 40 is produced by the light emitting element 1 due to the surface tension.
0, the side surface of the light transmission member 20 is scooped up and covered, and an inclined surface that is lower than the surface 21 toward the frame body 55 is formed. Further, the exposed surface of the resin 40 may be flattened so as to be substantially flush with the surface 21. Then, after the resin 40 is cured, dicing is performed at a predetermined position, and the light emitting device 100 is obtained by cutting into a desired size.

<Embodiment 2>
FIG. 5 is a schematic cross-sectional view for explaining the light-emitting device according to Embodiment 2 of the present invention. In the light emitting device of the example shown in FIG. 5, the configuration other than the structure of the separation portion is substantially the same as that of the above-described first embodiment, and therefore the same configuration is denoted by the same reference numeral and appropriately described. Is omitted.

The separating portion in the present invention may be any member as long as it separates at least the active layer of the semiconductor element structure to form a plurality of light emitting portions. Preferably, as shown in FIGS. A pair of positive and negative electrodes is provided, and a light emitting structure capable of emitting light by current injection is preferably provided. The light emitting element of the example shown in FIG. 5 has two types of separation portions having different depths, and shows each separation mode. The first separation portion 15 on the right side in the drawing has a depth up to the middle of the semiconductor element structure 11 and the semiconductor element structure 2.
It is formed within 0. That is, the light emitting structure portion 12 b is connected to the adjacent light emitting structure portion 12 a by a connecting portion that is a part of the semiconductor element structure 11 remaining on the first separation portion 15. When the remaining portion has the first conductivity type semiconductor layer, they are electrically connected to each other by the first conductivity type semiconductor layer, and can emit light in cooperation with each other in the light emitting structure portion. The degree of freedom of electrode arrangement can be increased. On the other hand, in the structure having separation parts that are insulated from each other and capable of independently emitting light, such as separating the first conductive type semiconductor layer, each light emitting structure part increases its light extraction and luminous efficiency as described above. This is preferable.

The covering member 40 covers the bottom surface of the first separating portion 15, that is, the surface of the connecting portion, and a light reflecting portion is provided at the interface between the covering member 40 and the surface of the connecting portion. Thus, by forming the connecting portion between the light emitting structure portions and the light reflecting portion at the separating portion, the thickness of the light diffusion region common to each light emitting structure portion can be increased, and the light transmitting substrate It is easy to obtain light diffusion and superimposition of light on the separation part at the interface with 1 and the connection part, and it is preferable to combine it with that in the substrate. For example, the first separation portion 15 is formed at a depth reaching an insulating layer such as a buffer layer, that is, the connection portion is formed of such a layer, so that each light emitting structure portion can be reliably electrically separated and independent. The above-described effects can be obtained. As will be described later, in the embodiment in which a gap is provided in the separation portion, light is extracted from the light reflection portion and the separation portion as described above while reducing the light dividing action in the separation portion in addition to the connection portion. Light emitting structure by
As described above, the self-absorption function in the element structure is reduced and the light incident function to the light-transmitting substrate can be enhanced by cooperating with the function and effect of the present invention.

On the other hand, the second separation part 14 on the left side in the drawing removes all of the semiconductor element structure 11 and the depth reaches the inside of the translucent substrate 1, and the light emitting structure part 12a is the second separation part. The portion 14 is insulated from the light emitting structure portion adjacent thereto (on the opposite side to 12b). Similar to the first embodiment, such a separation part can enhance the insulation of each light emitting structure part 12 and can easily fill the covering member 40 in the separation part, thereby improving the light reflectivity of the separation part. be able to. Further, in the second separation portion 14, the covering member 40 formed in the separation portion covers the wiring 51 of the mounting substrate 50 as described above, but the gap 16 is formed between the second separation portion 14 and the translucent substrate 1. Is provided so as to be separated from the translucent substrate 1 and further to cover the separation portion. In this case, the light reflecting portion is provided on the surface of the covering member 40 in the separating portion (and the interface between the gap 16 (air)). With such a configuration, in the second separation unit 14, it is possible to allow light to pass back and forth from the adjacent light emitting structure unit 12 while increasing the insulating property of the adjacent light emitting structure unit 12 to independently emit light. As described above, it is possible to promote superimposition of light on the separation portion while suppressing light loss due to light absorption of the wiring 51. On the other hand, since some light is irregularly reflected in the light reflecting portion,
Light can be suitably incident on the translucent substrate. Further, unlike the first embodiment, the substrate is also formed with a recess, thereby providing an effect similar to the concavo-convex structure 1A, and an entrance to the substrate of light confined in the separation portion by the gap, Luminance and color unevenness due to the separation unit can be suppressed. As described above, the semiconductor surface and the substrate surface constituting the inner surface of the separation part here are element structure surfaces capable of emitting light, and all surfaces are surfaces capable of emitting light, but some of them are surfaces. An electrode, wiring, etc., for example, as in Embodiment 4, may be a surface that is covered and from which a part can be emitted.

As described above, as a method of separating the light emitting element, its semiconductor surface, the substrate surface and the covering member and providing a gap on the surface and the separation part, a coating member coating method, a molding method or conditions thereof,
It can also be formed by adjusting the conditions such as the viscosity of the member, and the surface can be surface treated with a release agent in advance to form voids, which is easier to control, This is preferable because of its high productivity. As the mold release agent, a commonly known coating member, for example, a resin, can be used. For example, “Durasurf HD-1101” can be used as the fluorine mold release agent.
and so on.

<Embodiment 3>
FIG. 6 is a schematic cross-sectional view for explaining a light-emitting device according to Embodiment 3 of the present invention,
For example, it is the schematic sectional drawing cut | disconnected in the BB direction in FIG.1 (b). In the light emitting device of the example shown in FIG. 6, the configuration other than the covering configuration of the element structure by the covering member is substantially the same as that of the above-described first embodiment, and therefore the same configuration is denoted by the same reference numeral. Therefore, the description will be omitted as appropriate.

In the light emitting device of the example shown in FIG. 6, the covering member 40 is below the light emitting structure 12.
If at least the wiring 52 is covered, light from the surface of the element structure that can be emitted reaches the region, especially when the surface faces the wiring side, the light absorption by the wiring 51 is reduced. it can. Since the gap 17 is provided between the mounting surface of the light emitting structure 12 or between the device and the mounting surface, the mounting of the device may be partially peeled off due to volume change of the covering member, thermal expansion of the resin, or the like. In case of disconnection or adverse effects, it has the effect of eliminating it. In addition, a gap 18 is provided in a part between the covering member 40 and a side surface facing the outside of the light emitting structure 12, in particular, a side surface of the element. The covering member 40 is separated from the side surface of the light emitting structure 12 by the gap 18. May be. In particular, in the example shown in FIG. 6, the peripheral edge of the surface of the translucent substrate 1 where the semiconductor element structure 11 is provided is exposed by the gap 18, and the exposed portion 19 can be optically coupled from the gap 18. . Such a gap has a light scattering function, a function as a light guide region for condensing light to the substrate, as described above, while reducing light absorption by light reflection on the surface of the covering member 40 that is an interface with the gap, By the light emitting structure and the light extraction function to the outside of the element, the effect of the present invention, in particular, the effect of improving the luminance and color unevenness at the periphery of the element can be enhanced. Accordingly, the light emitted from the light emitting structure 12 separated from each other by the separating portion is reflected and optically coupled to the light transmissive substrate 1 while propagating and diffusing in the gap, thereby uniform from the light emitting element. Light can be emitted. The air gap can be formed in the same manner as described above. For example, the covering member separated to the mounting surface side is formed by covering the first thin film covering member and the mounting surface side before or after mounting. A method of forming a layer covering member by covering each side of the element, the substrate, and the light transmitting member can be used.

<Embodiment 4>
FIG. 7 is a schematic cross-sectional view (a) for explaining the light emitting device according to Embodiment 4 of the present invention,
It is a schematic plan view (b) of the light emitting element. In the light emitting device of the example shown in FIG. 7, the configuration other than the electrical connection structure between the light emitting structure portions is substantially the same as that of the above-described first embodiment. The description will be omitted as appropriate.

In the light emitting device of the example shown in FIG. 7, the separating portion is formed with a depth exposing the surface on which the semiconductor element structure 11 of the translucent substrate 1 is provided. An electrode for connecting the light emitting structure 12 in series with each other is provided by wiring the light emitting structure and the substrate surface on the bottom of the separating portion. Thereby, the formation of the conductive adhesive 60 such as the protruding electrode for mounting the light emitting element 10 on the mounting substrate 50 and the degree of design freedom thereof can be increased, and the corresponding wiring structure can be simplified. This also increases the capacity of the space between the separation part and the light emitting structure 12 and the mounting substrate 50, and makes it easier to fill the space with the covering member 40. The light absorptivity of the space can be reduced and the light reflectivity can be increased. In addition, it is possible to easily form a gap that can function as the light guide region described in Embodiment 3 above. Further, the wirings 9a to 9c are connected to the electrodes (9a and 9c) of the adjacent light emitting structure.
) And is extended to the substrate surface (9c) and covers a part of the inner surface of the separation part described above, and the remaining part is exposed. It can function as a surface, and the same effect can be obtained.

<Embodiment 5>
FIG. 8 is a schematic view of a light emitting device according to Embodiment 5 of the present invention, FIG. 8 (a) is a schematic cross-sectional view taken along line AA of FIG. 8 (b), and FIG. c) is a schematic top view of a light-emitting element mounted. In the light-emitting device of the example shown in FIG. 8, the number of light-emitting structure portions of the light-emitting element, electrodes, and other configurations except for the wiring of the mounting substrate are substantially the same as those of the above-described first embodiment. The components are denoted by the same reference numerals and description thereof is omitted as appropriate.

In the light emitting device 200 of the example shown in FIG. 8, as shown in FIG.
Similar to the first embodiment, there are six light-emitting structure portions 12 provided to be separated from each other by stripe-shaped separation portions. The light emitting structure 12 includes a plurality of (on the periphery of the mounting surface (
In the drawing, a pad electrode of the first conductivity type (here, n-side pad electrode 7) is provided in each corner and a total of four), and a conductive adhesive 60 of a protruding electrode is provided thereon, Except for these, a pad electrode of a second conductivity type, which is different from the first conductivity type, over substantially the entire area including the central portion of the mounting surface (
Here, a p-side pad electrode 6) is provided, and a protruding electrode 60 is provided at the center thereof. By disposing each electrode in this way, current is easily diffused over substantially the entire area of the light emitting structure 12, and unevenness in the light emission intensity distribution can be reduced. The first conductivity type pad electrode 7 has a stretched electrode extending from the pad electrode toward the central portion so as to surround the central portion of the mounting surface, and further facilitates current diffusion. It has become. Therefore, according to such an electrode arrangement, light emission with less unevenness in intensity distribution can be obtained even if the light emitting structure portion 12 is formed relatively large, so that the width of the separation portion can be reduced or the number of the separation portions can be reduced. Can
The luminous flux can be increased.

Further, as shown in FIGS. 8A and 8B, on the substrate 50 of the mounting substrate 210, the peripheral portion of one light emitting structure 12 (corresponding to the arrangement of each electrode of the light emitting structure 12). A plurality of substantially Y-shaped wirings 52 rotated 90 degrees are arranged so as to connect the electrode 7) and the central portion (electrode 6) of the other light emitting structure 12 and the light emitting structures 12 are connected in series. It is possible. As described above, if the electrode arrangement for improving the current diffusibility in the light emitting structure 12 is adopted, the wiring 5 is correspondingly provided.
2 and the covering member 40 covers the wiring 52 provided so as to face the light emitting structure portion and the separating portion, thereby reducing light absorption and efficiently extracting light to the translucent substrate 1. Can be combined.

Each of the above-described embodiments and each part described therein can be combined with each other, and the combination is appropriately applied in order to obtain desired light emission characteristics.

Examples according to the present invention will be described in detail below. Needless to say, the present invention is not limited to the following examples.

<Examples 1 and 2>
As shown in FIG. 8, the light source unit of the light emitting device of Example 1 includes an AlN ceramic substrate 50.
LED chips (light emitting elements) of about 1 mm × 6.5 mm, each having six light emitting structures 12 separated from each other on one sapphire substrate 1 as the light emitting element 10 on the wirings 51 and 52 of FIG. One (wavelength 455 nm) is flip-chip mounted by Au bumps 60.
Thereby, each light emitting structure part 12 is connected in series by the wiring 52. In addition, such an LED chip 10 includes a semiconductor element structure 11 including a nitride semiconductor n-type layer 2, an active layer 3, and a p-type layer 4 in this order stacked on a sapphire substrate 1, and RIE (reactive ion etching). ) To partially remove the semiconductor layer to form a separation portion (groove) where the surface of the sapphire substrate 1 is exposed. On this LED chip 10, a phosphor plate which is a sintered body of YAG phosphor and alumina (Al ₂ O ₃ ) as the light transmitting member 20 (the outer shape of the surface and the light receiving surface is about 0.8 mm × 6. A sheet of 3 mm and a substantially rectangular shape having a thickness of about 150 μm is placed and bonded to each other by an adhesive member 30 made of silicone resin. Then, a frame body 55 that surrounds the LED chip 10 and the phosphor plate 20 is installed on the ceramic substrate 50, and a covering member 40 is filled in a recess inside the frame body 55, and the surface 21 of the phosphor plate 20 is formed. The peripheral portions of the LED chip 10 and the phosphor plate 20 are covered with the covering member 40 so as to be exposed as the light emitting surface 90. At this time, the covering member 40 enters between the substrate 50 and the LED chip 10 and fills the separation part while covering the wirings 51 and 52. Here, the covering member 40 has a T diameter of about 270 nm.
It is a silicone resin containing light reflecting material 45 which is fine particles of iO ₂ at a concentration of about 23 weight percent. And after hardening of the covering member 40, a frame is removed and a light-emitting device is obtained.

The light emitting device of the second embodiment has a configuration in which the light emitting surface of the light emitting element 10 is included in the light receiving surface 22 of the light transmitting member 20, and the light emitting element 10 of the first embodiment has six light emitting elements on one sapphire substrate 1. Similar to the first embodiment, one LED chip having a substantially rectangular shape of about 1 mm × 6.5 mm provided with the structure portion 12 is formed, and the light transmitting member 20 is formed in a substantially rectangular shape of about 1.1 mm × 6.6 mm. A light emitting device is manufactured.

When the light emitting device of Example 1 is driven at a current of 700 mA (per light emitting structure),
High-luminance emission with a luminous flux of about 740 [lm] (chromaticity y value of about 0.28), maximum luminance of 4629 [cd / cm ² ], average luminance of 4123 [cd / cm ² ], and unevenness index of 0.12. A device is obtained. Further, when the light emitting device of Example 2 is also driven at a current of 700 mA, the luminous flux is about 812.
[Lm] (chromaticity y value about 0.32), maximum luminance 3717 [cd / cm ² ], average luminance 3212 [
A light-emitting device having a high luminous flux that emits light with a cd / cm ² ] and an unevenness index of 0.16 can be obtained. The unevenness index is defined as (maximum luminance−average luminance) / average luminance. The chromaticity is based on the International Lighting Commission (CIE) xyz color system.

<Example 3, Comparative Example 1>
As shown in FIG. 1, the light-emitting device of Example 3 has a light-emitting element 10 of Example 1 of about 1.0 mm × 4.3 mm in which four light-emitting structure portions 12 are provided on one sapphire substrate 1. The light emitting device is manufactured in the same manner as in Example 1 by using one LED chip having a substantially rectangular shape, and further by setting the light transmitting member 20 to a substantially rectangular shape of about 1.0 mm × 4.4 mm.

On the other hand, as shown in FIG. 9, the light-emitting device 300 of Comparative Example 1 has a plurality of light-emitting elements 10 each having one light-emitting structure portion provided on one light-transmitting substrate on the mounting substrate 50. One light transmitting member 20 is bonded onto these light emitting elements with an adhesive member 30 and the periphery thereof is covered with a covering member 40. The light-emitting device 300 of Comparative Example 1 is manufactured using the same material as that of Example 1 as the light-emitting element 10.
It is fabricated in the same manner as in Example 3 except that an ED chip is used.

10A is the light emitting device of Example 3, FIG. 10B is the device of Comparative Example 1, and the current is 700 mA (Example 3 is for each light emitting structure, and Comparative Example 1 is for each light emitting element). Each distribution of chromaticity y values on the light emitting surface 90 when driven is shown. Such a chromaticity distribution can be measured by an optical measuring instrument such as “ProMetric” manufactured by Cybernet. The light emitting device of Example 3 emits light with the same luminance and unevenness index as the light emitting device of Comparative Example 1, and FIG.
As shown in 0, color unevenness in the light emitting surface is reduced as compared with the light emitting device of Comparative Example 1. Further, in the light emitting device of the present invention, luminance unevenness, color unevenness, light emission caused by mounting accuracy (element height, inclination, rotation) of individual light emitting elements, which is likely to occur in the light emitting device as in Comparative Example 1, Light loss or the like due to sagging of the adhesive member 30 between elements can be suppressed.

The light-emitting device of the present invention can be suitably used for backlight sources such as illumination light sources, LED displays, liquid crystal display devices, traffic lights, illumination switches, various sensors, various indicators, and the like.

DESCRIPTION OF SYMBOLS 10 ... Light emitting element (1 ... Translucent substrate, growth substrate (1A ... Uneven structure), 2 ... 1st conductivity type (n-type)
Semiconductor layer, 3 ... active layer, 4 ... second conductivity type (p-type) semiconductor layer, 5 ... translucent conductive layer, 6 ... second
Electrode (p-side pad electrode), 7 ... first electrode (n-side pad electrode), 8 ... protective film, 11 ... element structure, 12 ... light-emitting structure part (12a, 12b ... light-emitting structure part [epi non-isolation / Substrate not exposed])
13 to 15: separation part, 16 ... gap (within the separation part), 17 ... gap (mounting side), 18 ... gap (on the substrate exposed on the semiconductor side surface in the element), 19 ... exposed parts 20, 24 at the outer edge of the substrate Light transmitting member (21, 23, 25 ... surface, 22, 26 ... light receiving surface)
30 ... Adhesive member, 40 ... Cover member, 45 ... Light reflecting material, 50 ... Mounting substrate (51, 52 ...
Wiring), 55 ... Frame, 60 ... Conductive adhesive, 100, 200 ... Light emitting device, 210 ... Mounting substrate

Claims (14)

A light transmissive member having a light emitting surface and a light receiving surface of the light emitting device;
A light-emitting element comprising a light-transmitting substrate having an emission surface coupled to the light-receiving surface and a surface facing the emission surface and provided with a semiconductor element structure;
A light-reflective material, a light-exiting surface exposed, a side surface of the light-emitting element, and a covering member that extends from the side surface and covers a part of the light-transmitting member,
The light emitting element is formed on the surface of the translucent substrate.
And a plurality of light emitting structure parts provided in each region of the separated semiconductor element structure, wherein the semiconductor element structure is separated from each other by the separation part,
The said covering member is a light-emitting device which coat | covers the said isolation | separation part and the said light emission structure part adjacent to this isolation | separation part, and has a light reflection part on this coating | coated side surface. 2. The light emitting device according to claim 1, wherein the light emitting structure is provided in each of the semiconductor element structures separated from each other so as to be able to emit light independently by the separating unit. The light emitting device according to claim 1, wherein the light emitting structure parts are separated from each other by the separation part and are connected to each other in a part of the semiconductor element structure to emit light simultaneously. 4. The light emitting device according to claim 1, wherein the semiconductor element structure has an element structure surface in which the light emitted from the light emitting structure part can be emitted to the outside of the light emitting element. 5. The light-emitting device according to claim 1, wherein the light-emitting element has an element structure surface on a side surface of which the light emission from the light-emitting structure part can be emitted to the outside of the light-emitting element. The light emitting device according to claim 1, wherein a surface of the translucent substrate is exposed on a bottom surface of the separation portion. The light emission according to claim 6, wherein the covering member covers the surface of the translucent substrate at the separating portion, and the light reflecting portion is provided at an interface between the covering member and the surface of the translucent substrate. apparatus. The surface of the translucent substrate has a concavo-convex structure, and the semiconductor element structure and the separation portion are disposed on the concavo-convex structure,
The light emitting device according to any one of claims 1 to 7, wherein the covering member is provided on a surface of the translucent substrate exposed on a bottom surface of the separation portion. The light emitting device according to claim 1, wherein the covering member continuously covers the semiconductor element structure and the side surface of the light transmitting substrate from the side surface of the light transmitting member. The separation part has an element structure surface capable of emitting light emitted from the light emitting structure part to the outside of the light emitting element, or the surface of the element structure and the surface of the translucent substrate capable of emitting the light emission to the outside of the light emitting element,
The light-emitting device according to claim 1, wherein the covering member covers the separation portion and the semiconductor element structure via a gap in the separation portion. The semiconductor element structure has an element structure surface capable of emitting light emitted from the light emitting structure portion to the outside of the light emitting element, and the covering member directly covers an area covered with a gap on the element structure surface. The light-emitting device according to claim 1, further comprising a region. The light emitting device according to claim 1, wherein the light transmitting member is a wavelength conversion member excited by the light emitting element. The light emitting device according to claim 12, wherein the wavelength conversion member is a plate-like body having first and second main surfaces facing each other. The semiconductor element structure includes a wiring board that includes a wiring that traverses the separation part, and that is mounted by connecting the plurality of light emitting structure parts by the wiring;
The light-emitting device according to claim 1, wherein the covering member covers the wiring crossing the separation portion and has a light reflection portion in the separation portion.

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