JP2014086562A - Surface emission semiconductor laser, surface emission semiconductor laser device, optical transmission device and information processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surface emission semiconductor laser which enables downsizing.SOLUTION: A surface emission semiconductor laser array 10 includes a plurality of light emission parts each having a mesa M. The light-emission part includes an n-side electrode 110 which is formed around the mesa M and the n-side electrode 110 is connected to an n-side electrode pad 114 via n-side lead-out wiring 112; and a p-side electrode 120 formed at an apex of the mesa M and the p-side electrode 120 is connected to a p-side electrode pad 124 via p-side lead-out wiring 122. The mesa M is isolated from a pad formation region 30 across a groove 20 and an insulation material 140 is filled in the groove 20. The n-side lead-out wiring 112 and the p-side lead-out wiring 122 extend in parallel with each other across the insulation material 140 in an overlapping manner.

Description

  The present invention relates to a surface emitting semiconductor laser, a surface emitting semiconductor laser device, an optical transmission device, and an information processing device.

  In addition to the explosive increase in the amount of information in data centers accompanying the spread of cloud computing, optical communication technology for information processing of large-capacity communication is required. So far, in short-distance communication, optical link technology using a 10 Gbps class high-speed surface-emitting type semiconductor laser has been developed. For high-capacity communication, there is a technology in which surface-emitting semiconductor lasers are arranged in a one-dimensional array. However, the element size and fiber size increase, resulting in an increase in module size. As a method for improvement, a technique using a large-diameter fiber, a multi-core fiber, and a surface emitting semiconductor laser has been studied (Patent Documents 1 and 2). Since this multi-core fiber has a plurality of two-dimensional cores, the surface emitting semiconductor laser is preferably a two-dimensional array. Further, a high-speed surface-emitting semiconductor laser of 10 Gbps or more has a structure in which both n-side and p-side electrodes are formed on the same surface in order to reduce capacitance for high-speed operation (Patent Document 3).

Japanese Patent Laid-Open No. 11-289317 JP 2011-193459 A JP 2008-47717 A

  An object of the present invention is to provide a surface-emitting semiconductor laser, a surface-emitting semiconductor laser device, an optical transmission device, and an information processing device that can be miniaturized.

According to a first aspect of the present invention, there is provided a surface-emitting type in which a light emitting unit including a first conductive type first semiconductor multilayer reflector, an active region, and a second conductive type second semiconductor multilayer reflector is formed on a substrate. A semiconductor laser, wherein the first wiring layer is electrically connected to the first semiconductor multilayer reflector of the light emitting portion and includes a first extending portion extending in a first direction, and the light emitting A second wiring layer including a second extending portion electrically connected to the second semiconductor multilayer film reflecting mirror and extending in the first direction, and formed around the light emitting portion An insulating member that fills the groove, the first extending portion extends on a bottom surface side of the insulating member, and the second extending portion extends on an upper surface side of the insulating member. Surface emitting semiconductor laser.
According to a second aspect of the present invention, in the surface-emitting type semiconductor laser according to the first aspect, when viewed from the emitting surface side, at least a part of the first extending portion and the second extending portion overlap each other.
According to a third aspect of the present invention, a plurality of light emitting portions are formed on the substrate, and the first extending portion and the second extending portion are disposed between two adjacent light emitting portions, between electrode pads, or between a light emitting portion and an electrode pad. The surface emitting semiconductor laser according to claim 1, wherein at least a part of the existing portion overlaps when viewed from the emission surface side.
According to a fourth aspect of the present invention, the surface-emitting type semiconductor laser further includes a pad forming region isolated from the light emitting part through the groove, and the first wiring layer connected to the first wiring layer is formed on the pad forming region. 1. An electrode pad and a second electrode pad connected to the second wiring layer are formed, and the first electrode pad and the second electrode pad are on the same plane. 3. The surface emitting semiconductor laser according to any one of 3 above.
According to a fifth aspect of the present invention, the groove extends into the pad forming region, and at least one of the first electrode pad and the second electrode pad is formed on the insulating material. Surface emitting semiconductor laser.
According to a sixth aspect of the present invention, the first wiring layer is electrically connected to the first semiconductor multilayer film reflecting mirror through a connection hole formed in the groove, and the connection hole is connected to the second wiring layer. 4. The surface emitting semiconductor laser according to claim 1, wherein the surface emitting semiconductor laser is not formed immediately below the wiring layer.
According to a seventh aspect of the present invention, the first wiring layer is electrically connected to the first semiconductor multilayer film reflecting mirror through a connection hole formed in the groove, and the connection hole is on a pad formation region side. The surface emitting semiconductor laser according to claim 1, wherein the surface emitting semiconductor laser is partially formed on the surface.
According to an eighth aspect of the present invention, the insulating member is formed with an exposed region that exposes an end portion of the first wiring layer, and the first electrode pad is formed on an inclined surface of the insulating member in the exposed region. 5. The surface-emitting type semiconductor according to claim 4, wherein the surface-emitting type semiconductor is connected to the first wiring layer via a pad connection wiring, and the pad connection wiring, the first electrode pad, and the second electrode pad are formed simultaneously. laser.
The surface emitting semiconductor laser according to any one of claims 1 to 8, wherein the insulating member is made of a low dielectric constant material having a relative dielectric constant smaller than 4.
A surface emitting semiconductor laser device comprising the surface emitting semiconductor laser according to claim 1 and an external lead electrically connected to the surface emitting semiconductor laser.
An eleventh aspect of the present invention is an optical transmission device including the surface-emitting type semiconductor laser according to any one of the first to ninth aspects and an optical member optically coupled to the surface-emitting type semiconductor laser.
The optical member may be a multi-core fiber in which a plurality of cores are formed in one optical fiber, and laser light emitted from a plurality of light emitting units of the surface-emitting type semiconductor laser may be the multi-core fiber. The optical transmission device according to claim 11, wherein the optical transmission device is incident on each of the plurality of cores of the fiber.
A thirteenth aspect of the present invention is the surface emitting semiconductor laser according to any one of the first to ninth aspects, a condensing unit that condenses a laser beam emitted from the surface emitting semiconductor laser array on a recording medium, A mechanism for scanning the recording medium with the laser beam condensed by the condensing unit.

According to the first aspect, a downsized surface emitting semiconductor laser can be provided.
According to the second aspect, it is possible to further reduce the size of the surface-emitting type semiconductor laser as compared with the configuration that does not overlap when viewed from the emission surface side.
According to the third aspect, the pitch between two adjacent light emitting portions, between the light emitting portion and the electrode pad, or between the electrode pads can be narrowed.
According to the fourth aspect, connection to an external lead or the like can be facilitated.
According to the fifth aspect, the regulation capacity of the electrode pad portion can be reduced.
According to the sixth aspect, the surface of the insulating member can be flattened.
According to the seventh aspect, the pitch between the light emitting portions can be further narrowed.
According to the eighth aspect, disconnection can be prevented in the connection between the first wiring layer and the first electrode pad.
According to the ninth aspect, noise between the first wiring layer and the second wiring layer can be prevented.
According to the tenth to thirteenth aspects, it is possible to provide a surface emitting semiconductor laser device, an optical transmission device, and an information processing device capable of high speed operation using a miniaturized surface emitting semiconductor laser.

FIG. 1A is a schematic plan view showing a part of a surface emitting semiconductor laser array according to a first embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line XX in FIG. FIG. 2A is a cross-sectional view taken along line XX1 in FIG. 1A, and FIG. 2B is a perspective view illustrating an example of connection between an n-side lead-out wiring and an electrode pad, FIG. These are sectional drawings which show the other connection example of the extraction wiring by the side of n, and an electrode pad. It is a figure explaining the modification of the surface emitting semiconductor laser array which concerns on a 1st Example. FIG. 4A is a schematic plan view showing a part of a surface emitting semiconductor laser array according to the second embodiment of the present invention, and FIG. 4B is a cross-sectional view taken along line XX of FIG. FIG. It is a schematic sectional drawing explaining the manufacturing process of the surface emitting semiconductor laser array which concerns on the 1st Example of this invention. It is a schematic sectional drawing explaining the manufacturing process of the surface emitting semiconductor laser array which concerns on the 1st Example of this invention. 1 is a schematic plan view of a surface emitting semiconductor laser array according to a first embodiment of the present invention. 8A and 8B are diagrams illustrating an optical transmission device using a surface-emitting type semiconductor laser array according to an embodiment of the present invention. FIG. 8A is a cross-sectional view of a Marcothia fiber, and FIG. 8B is an optical transmission device. FIG. 8C is a schematic cross-sectional view of another optical transmission device. It is a figure which shows the structural example of the information processing apparatus using the surface emitting semiconductor laser array which concerns on the Example of this invention. It is a schematic plan view which illustrates the different pattern of the surface emitting semiconductor laser array which concerns on the Example of this invention. It is a figure which shows the other modification of the surface emitting semiconductor laser which concerns on the Example of this invention, FIG. 11 (A) is a schematic plan view of a surface emitting semiconductor laser array, FIG.11 (B) is the X. FIG.

  Preferred embodiments of the present invention will be described with reference to the drawings. In the following description, the surface emitting semiconductor laser is referred to as a VCSEL (Vertical Cavity Surface Emitting Laser) or a VCSEL element. Further, as a preferred embodiment, a VCSEL array in which a plurality of light emitting portions are formed on a substrate is illustrated. However, the present invention includes not only a VCSEL array but also a VCSEL in which a single light emitting portion is formed on a substrate. It should be noted that the scale of the drawings is emphasized for easy understanding of the features of the invention and is not necessarily the same as the scale of an actual device.

  A VCSEL array according to a first embodiment of the present invention is shown in FIG. FIG. 1A is a schematic plan view of a part of the VCSEL array, and FIG. 1B is a sectional view taken along line XX. The VCSEL array 10 is formed to include a plurality of light emitting elements on a wafer or a substrate. FIG. 1A shows one typical light emitting element. The light emitting element of this example is a VCSEL element, and the VCSEL element has a light emitting portion defined by a cylindrical mesa (columnar structure) M. In FIG. 1A, the other two mesas M1 and M2 adjacent to the mesa M are virtually shown. The plurality of VCSEL elements including the mesas M, M1, and M2 are isolated from the pad formation region 30 by the groove 20, and the groove 20 is filled with an insulating material having a small relative dielectric constant as will be described later. A chain line 22 in FIG. 1A represents the boundary between the groove 20 and the pad formation region 30. Note that the shape of the groove is not limited to the shape disclosed in the present embodiment, and may be configured as other concave shape or step shape as long as the shape achieves the function in this example.

  An electrode pad corresponding to each VCSEL element is formed on the pad formation region 30. In FIG. 1A, an n-type electrode pad 114 electrically connected to the mesa M and a p-side electrode pad 124 are formed. A pair is shown. The n-side electrode pad 114 is connected to the n-side electrode 110 via the lead wiring 112, and the p-side electrode pad 124 is connected to the p-side electrode 120 via the lead wiring 122. The n-side lead-out wiring 112 and the p-side lead-out wiring 122 extend in parallel with each other via the insulating material 140. In other words, the p-side lead-out wiring 122 is connected to the p-side electrode 120 at the top of the mesa through the top surface of the insulating material 140, and the n-side lead-out wiring 112 passes through the bottom surface of the insulating material 140, that is, through the groove 20. Connected to the side electrode 110.

  Specifically, as shown in FIG. 1B, an n-type GaAs contact layer 102 is formed with a certain thickness on a semi-insulating GaAs substrate 100, and further, an Al composition is different thereon. N-type lower distributed black reflector (hereinafter referred to as DBR) 104 in which AlGaAs layers are alternately stacked, and a quantum well layer sandwiched between upper and lower spacer layers formed on lower DBR 104 An active region 106 and ap type upper DBR 108 in which AlGaAs layers having different Al compositions formed on the active region 106 are alternately stacked are formed. Further, a p-type GaAs contact layer is formed on the upper DBR 108 as necessary.

The n-type contact layer 102 is a semiconductor layer having a high impurity concentration, for example, a carrier concentration of 1 × 10 ¹⁹ cm ⁻³ after doping silicon that is an n-type impurity. The n-type lower DBR 104 is, for example, a multi-layer stack of a pair of Al _0.9 Ga _0.1 As layer and Al _0.3 Ga _0.7 As layer, and the thickness of each layer is λ / 4n _r (where λ is the oscillation wavelength, n _r is the refractive index of the medium), and these are alternately laminated in 40 cycles. The carrier concentration after doping silicon which is an n-type impurity is, for example, 3 × 10 ¹⁸ cm ⁻³ . The lower spacer layer of the active region 106 is an undoped Al _0.6 Ga _0.4 As layer, and the quantum well active layer is an undoped Al _0.11 Ga _0.89 As quantum well layer and an undoped Al _0.3 Ga _0.7. The As barrier layer, and the upper spacer layer is an undoped Al _0.6 Ga _0.4 As layer. p-type upper DBR108, for example, a plurality of layers laminate of pairs of Al _0.9 Ga _0.1 As layers and Al _0.3 Ga _0.7 As layer, the thickness of each layer is λ / 4n _r, 22 cycles are alternately They are stacked. The carrier concentration after doping with carbon which is a p-type impurity is, for example, 3 × 10 ¹⁸ cm ⁻³ . Alternatively, a contact layer made of p-type GaAs may be formed on the uppermost layer of the upper DBR 108, and a current confinement layer made of p-type AlAs or AlGaAs may be formed inside the upper DBR 108. Note that the above VCSEL configuration is a typical example, and the present invention is not limited to this.

  By etching the semiconductor layer extending from the upper DBR 108 to a part of the lower DBR 104, the groove 20 is formed on the substrate, and thereby the plurality of mesas M and the pad formation region 30 are isolated. An interlayer insulating film 130 is formed on the substrate including the mesa M and the pad formation region 30, and an opening for the n-side electrode and an opening for the p-side electrode are formed in the interlayer insulating film 130. The opening for the n-side electrode is formed at the bottom of the mesa M and concentrically with the mesa M to expose the n-type lower DBR 104. On the other hand, the opening for the p-side electrode is formed in a circular shape at the top of the mesa M to expose the p-type upper DBR 108. In a preferred embodiment, a contact hole 150 reaching the n-type contact layer 102 is formed by etching the lower DBR 104 exposed by the opening for the n-side electrode, and a metal such as Au / Ge is formed in the contact hole 150. An n-side electrode 110 is formed. Therefore, as shown in the drawing, the n-side electrode 110 is formed in an annular shape so as to surround the mesa M at the bottom of the mesa M, and is electrically connected to the n-type contact layer 102. On the other hand, an annular p-side electrode 120 made of a metal such as Au or Ti / Au is formed on the top of the mesa through the opening of the interlayer insulating film 130. The p-side electrode 120 is electrically connected to the upper DBR 108. The The central opening of the p-side electrode 120 functions as a window for emitting laser light.

The groove 20 formed around the mesa M is filled with an electrically insulating material 140. The insulating material 140 is made of, for example, photosensitive BCB (benzocyclobutene) or photosensitive polyimide resin. The insulating material 140 is desirably a material having a small relative dielectric constant, and has a relative dielectric constant smaller than, for example, SiO ₂ (relative dielectric constant is about 3.9) or SiN (relative dielectric constant is about 7). Consists of materials. For example, it is desirable to form the insulating material 140 flattened so as not to cause a large step between the top of the mesa M and the pad formation region 30 by spin coating polyimide resin or the like.

  A p-side lead-out wiring 122 is formed so as to extend the surface of the insulating material 140. One end of the p-side lead-out wiring is electrically connected to the upper DBR 108 via the p-side electrode 120. The connection to the upper DBR 108 may be electrically connected through another layer such as a contact layer. The other end is connected to the p-side electrode pad 124. In the pad formation region 30, the p-side lead-out wiring 122 and the p-side electrode pad 124 are electrically insulated from the upper DBR 108 by the interlayer insulating film 130. Preferably, the p-side electrode 120, the lead-out wiring 122, and the electrode pad 124 are patterned simultaneously. The groove 20 may extend in the pad formation region 30, and at least one of the p-side electrode pad 124 and the n-side electrode pad 114 may be formed on the filled insulating material 140. When the electrode pad is formed on the thick insulating material, the parasitic capacitance of the electrode pad portion is reduced, which is advantageous for speeding up.

  Here, the n-side lead-out wiring 112 extends on the bottom side of the insulating material 140 so as to be parallel to the lower side of the p-side lead-out wiring 122. One end of the n-side lead-out wiring is connected to the n-side electrode 110, and the other end is connected to the n-side electrode pad 114. 2A is a cross-sectional view taken along line XX1 of FIG. 1A, and FIG. 2B is a perspective view of a connection example between the n-side lead-out wiring 112 and the electrode pad 114. It is shown. Preferably, as shown in FIG. 2B, the insulating material 140 is formed with a contact region 142 where the inclined surface 144 is formed. The contact region 142 exposes an end 112A of the n-side lead wiring 112, and the end 112A is connected to the electrode pad 114 via a pad connection wiring 114A extending on the inclined surface 144. By using the inclined surface 144, the step between the n-side lead-out wiring 112 and the electrode pad 114 can be relaxed and disconnection can be prevented. In such a configuration, the n-side electrode pad 114 and the pad connection wiring 114A can be formed simultaneously with the p-side electrode pad 124, the lead-out wiring 122, and the p-side electrode 120.

  FIG. 2C is a cross-sectional view showing another connection example of the n-side lead wiring 112 and the electrode pad 114. For example, after the insulating material 140 is formed on the n-side lead wiring 112, a through hole 144A is formed in the insulating material 140 to expose the n-side lead wiring 112, and then the electrode pad 114 and the pad connection wiring 114A are formed. You may make it form.

  As described above, in this embodiment, a buried structure of the insulating material 140 is formed on the n-side lead wiring 112, and the p-side lead wiring 122 is placed on the insulating material 140 at a position overlapping the n-side lead wiring 112. By forming, an element wiring structure can be manufactured with the same size as when formed with one wiring, and the element array can be downsized. In other words, by making the n-side lead wire 112 and the p-side lead wire 122 three-dimensional or three-dimensional, the n-side lead wire and the p-side lead wire are formed on the same plane. As a result, the area for the lead-out wiring can be reduced, and as a result, the pitch of the VCSEL elements M1 and M2 when the VCSEL elements are arranged or arrayed can be reduced. Even if the n-side lead-out wiring 112 and the p-side lead-out wiring 122 overlap, the insulating material 140 is made of a material having a low relative dielectric constant, so that noise such as crosstalk is effective in a VCSEL operated at high speed. Can be prevented. Further, since the n-side and p-side electrode pads 114 and 124 are on the same plane, connection to external leads such as wire bonding and flip chip mounting can be facilitated.

  Next, some modifications of the present embodiment will be described. In the configuration shown in FIGS. 1 and 2, at least a part of the n-side lead wiring 112 and the p-side lead wiring 122 extends in parallel above and below the insulating material 140. The wiring widths are equal. However, the widths of the n-side lead wiring 112 and the p-side lead wiring 122 are not necessarily equal. FIG. 3 is a cross-sectional view of a portion where the n-side lead wire 112 and the p-side lead wire 122 overlap. As shown in FIG. 3A, the width W1 of the n-side lead wire 112 is p. The width W2 of the lead-out wiring 122 on the side may be larger, or conversely, the width W1 of the lead-out wiring 112 on the n-side may be smaller than the width W2 of the lead-out wiring 122 on the p side.

  Further, when viewed from the upper side, that is, from the emission surface side, it is desirable that the n-side lead wiring 112 and the p-side lead wiring 122 overlap in terms of miniaturization of the element. ), The n-side lead wiring 112 and the p-side lead wiring 122 may be offset so as to partially overlap, or the n-side lead wiring 112 and the n-side lead wiring 112 as shown in FIG. An overlapping relationship in which a gap S is formed between the p-side lead-out wiring 122 may be used. Note that the configuration of FIG. 3D actually has a narrower occupation width than the configuration in which the lead wires are provided in parallel on the same surface, although the lead wires do not overlap each other when viewed from the exit surface side. If the offset is within a possible range, it is defined as a state in which the lead wires overlap each other. 3C and 3D, the n-side lead wire 112 and the p-side lead wire 112 are three-dimensionally arranged in the vertical direction of the insulating material 140. Compared with the case where the n-side lead wiring and the p-side lead wiring are arranged on the same plane, the area required for the lead wiring can be reduced, which contributes to the miniaturization of the element.

  Furthermore, in the above embodiment, an example in which the extending direction of the extended portion of the n-side lead wiring 112 and the p-side lead wiring 122 is completely matched when viewed from above is shown. The n-side and p-side lead wires are drawn out as long as the occupation width can be reduced as compared with the configuration in which the n-side and p-side lead wires are provided in parallel on the same surface. Some angle may be formed between the directions.

  Next, a second embodiment of the present invention will be described with reference to FIG. The same components as those in the first embodiment are designated by the same reference numerals. In the first embodiment, the contact hole 150 reaching the contact layer 102 is continuously formed so as to surround the entire circumference of the mesa M, whereas in the second embodiment, such a contact hole 150 is formed. 150 surrounds a part of the mesa M, but is not formed immediately below the p-side lead-out wiring 122.

  As shown in FIG. 4A, the end portions 150A and 150B of the contact hole 150 for forming the n-side electrode 110 are terminated before the p-side lead wire 122 or the n-side lead wire 112. . A flat wiring layer 160 is formed between the end portions 150A and 150B of the contact hole 150. The flat wiring layer 160 electrically connects the n-side electrode 110 existing at the end portions 150A and 150B of the contact hole 150. To do. When the insulating material 140 having fluidity or viscosity is filled in the groove 20, a recess or a step 140A (see FIG. 4B) is formed on the contact hole 150 so as to follow the shape. However, since the contact hole 150 is not formed immediately below the p-side lead-out wiring 122, the surface of the insulating material 140 there is easily flattened. For this reason, since the p-side lead wiring 122 formed on the insulating material 140 is also formed on a flat surface, disconnection or the like of the lead wiring 122 is prevented, and the element array can be easily manufactured.

  Next, a method for manufacturing a VCSEL array according to the first embodiment of the present invention will be described with reference to FIGS. FIG. 5A shows one element on the VCSEL array. In the state shown in FIG. 5A, the groove 20 is formed by etching the semiconductor layer on the substrate 100, and the mesa M and the pad formation region 30 are formed. An interlayer insulating film 130 is formed so as to cover the entire surface of the substrate. An annular opening 130A is formed in the interlayer insulating film 130 so as to surround the mesa M, and a circular opening 130B is formed on the top of the mesa M. Is done.

  Next, the lower DBR 104 exposed through the opening 130A is etched using an etching mask pattern (not shown) to form an annular contact hole 150 reaching the contact layer 102 as shown in FIG. 5B. . After the etching mask pattern is removed, a pattern of the n-side electrode 110 and the n-side lead wiring 112 is formed as shown in FIG. Next, as shown in FIG. 6D, a photosensitive polyimide resin is dropped into the groove 20, and the groove 20 is filled with an insulating material 140. At this time, the insulating material 140 is supplied to such an extent that no step is generated between the mesa M and the pad formation region 30.

  Next, a mask pattern (not shown) is formed, and the photosensitive polyimide resin is exposed and developed. As shown in FIG. 6E, the photosensitive portion is exposed so that the end 112A of the n-side lead wiring 112 is exposed. A contact region 142 is formed in the polyimide resin. At this time, the exposure amount to the photosensitive polyimide resin is adjusted using a grating mask (halftone mask) or the like so that the inclined surface 144 is formed.

  Next, as shown in FIGS. 1 and 2, the pad connection wiring 114 </ b> A and the n-side electrode pad 114 are formed simultaneously with the p-side electrode 120, the p-side lead-out wiring 122, and the p-side electrode pad 124.

  In the above embodiment, the VCSEL array in which a plurality of light emitting portions (mesas) are formed on the substrate is mainly exemplified. However, the present invention has a single bit structure in which a single light emitting portion is formed on the substrate. The present invention can be applied to a VCSEL, and the single-bit high-speed VCSEL of the present invention can be miniaturized as compared with a conventional high-speed VCSEL in which n-side and p-side lead-out wirings are formed on the same plane. Can do.

  Next, an optical transmission device using a VCSEL array according to an embodiment of the present invention will be described. FIG. 7 shows a schematic plan view of a VCSEL array formed according to the first embodiment. The VCSEL array shown in the figure includes seven VCSEL elements. That is, one mesa M is formed at the center, and six mesas M1 to M6 are formed at positions that are concentric with this and rotationally symmetric. In this case, the pitch between each mesa is equal. Normally, the lead-out wiring of the mesa M located in the center is difficult to route because it passes between the mesas M1 and M2. However, in this embodiment, the lead-out wiring 122 requires only one space. The routing is facilitated, and the pitch between the mesas M1 and M2 can be narrowed. By narrowing the pitch of mesa M1 and mesa M2, the pitch between other mesas can be reduced accordingly, and the array can be downsized. Lead wires 122 corresponding to the mesas M <b> 1 to M <b> 6 respectively extend radially and are connected to the electrode pads 114 and 124 on the pad formation region 30. A circular chain line 22 is a boundary between the pad forming region 30 and the groove 20.

  FIG. 8A is a cross-sectional view of a multi-core fiber 200. The multi-core fiber 200 includes a plurality of cores 202 arranged at equal intervals in one fiber. The number and position of each core 202 of the multi-core fiber 200 correspond to the number and position of mesas (light emitting units) on the VCSEL array, and a plurality of laser beams emitted from the VCSEL array are incident on the corresponding core 202, Is transmitted. Use of such a multi-core fiber 200 enables large-capacity data transmission by spatial multiplexing.

  FIG. 8B is a schematic cross-sectional view illustrating an example of an optical transmission device. In the optical transmission apparatus 300, a VCSEL array chip 310 is mounted on a metal stem 302 via a conductive adhesive. A plurality of external leads 304 are attached to the metal stem 302 through insulated through holes, and the external leads 304 are electrically connected to each VCSEL element on the chip 310. A hollow cap 320 is fixed on the stem 302, and a ball lens 330 as an optical member is fixed in an opening at the center of the cap 320. The optical axis of the ball lens 330 substantially coincides with the centers of the plurality of VCSELs formed on the VCSEL chip 310. Further, a cylindrical housing 340 is fixed on the stem 302, and a ferrule 350 is held in a sleeve 342 formed integrally with an end surface of the housing 340, and the multicore fiber 200 is held by the ferrule 350. The multi-core fiber 200 is accurately aligned with the ball lens 330. By simultaneously driving or individually driving each VCSEL element by the external lead 304, the laser light emitted from each light emitting portion of the chip 310 is condensed on each core 202.

  FIG. 8C shows a configuration example of another optical transmission apparatus 300A. In this example, the VCSEL array chip 310 and the multi-core fiber 200 are directly optically coupled without using the ball lens 330. As described above, in the present embodiment, the pitch of the VCSEL element can be reduced, so that the pitch of the VCSEL element can be matched with the pitch of the core 202 of the multi-core fiber 200. For this reason, the laser light emitted from the VCSEL element can be directly focused on the core 202 by bringing the VCSEL element close to the incident surface of the multi-core fiber 200. Thereby, the number of parts can be reduced, and a low-cost and small-sized optical transmission device 300A can be obtained.

  FIG. 9 is a diagram illustrating an example in which the VCSEL array of the present embodiment is applied to a light source of an optical information processing apparatus. The optical information processing apparatus 400 is rotated at a constant speed by a collimator lens 420 that receives laser light from a surface-emitting type semiconductor laser device 410 mounted with a VCSEL array, and the light flux from the collimator lens 420 is spread at a constant spread angle. A photosensitive drum that forms a latent image based on the reflected polygon mirror 430, the fθ lens 440 that receives the laser beam from the polygon mirror 430 and irradiates the reflection mirror 450, the line-shaped reflection mirror 450, and the reflection light from the reflection mirror 450. (Recording medium) 460 is provided. As described above, optical information processing such as a copying machine or a printer provided with an optical system for condensing the laser light from the VCSEL on the photosensitive drum and a mechanism for scanning the condensed laser light on the optical drum. It can be used as a light source for the apparatus. The surface-emitting type semiconductor laser device 410 can be obtained, for example, by removing the housing 340 and the multi-core fiber 200 from the configuration of FIG.

  Next, a VCSEL array having a different pattern of this embodiment is shown in FIG. The VCSEL array shown in the figure includes seven VCSEL elements arranged linearly. That is, the mesas M1, M3, M5, and M7 are arranged linearly, the mesas M2, M4, and M6 are arranged linearly, and the pitch of each mesa is equal. The p-side lead-out wiring 122 of the mesas M2, M4, and M6 extends between the mesas M1, M3, M5, and M7 and extends to the pad formation region 30. A chain line 22 is a boundary between the groove 20 and the pad forming region 30. Also in this example, the p-side lead-out wiring 122 and the n-side lead-out wiring 112 have a three-dimensional structure, so that it is possible to form an array with the same size as that formed with one lead-out wiring. Miniaturization can be achieved. In addition, it becomes easy to draw the lead-out wiring of the light emitting units (M2, M4, M6) arranged inside the array to the outside.

  The example shown in FIG. 10 shows an example in which the extended portions of the p-side lead-out wiring 122 and the n-side lead-out wiring 112 overlap between two adjacent light-emitting portions when viewed from the emission surface side. Depending on the part, electrode pad layout, etc., the extended portions of the p-side lead wire 122 and the n-side lead wire 112 overlap between two adjacent electrode pads or between the light emitting portion and the electrode pad. It is also possible to extend to. That is, M1 to M7 shown in FIG. 10 may be electrode pad layouts, and the p-side lead wire 122 and the n-side lead wire 112 extend between the electrode pads or between the electrode pad and the light emitting portion. Exists.

  FIG. 11 is a diagram illustrating a VCSEL array according to still another embodiment of the present invention. As shown in FIG. 11A, a plurality of mesas M are arranged in the circumferential direction at an equal pitch, and two mesas M are arranged therein. In this example, the n-side electrode 110 or the contact groove 150 for the n-side electrode 110 is formed not on the entire circumference of the mesa M but on the pad forming region 30 side. For example, the n-side electrode 110 or the contact groove 150 is formed in a fan shape or an arc shape having an inner angle of about 90. With such a configuration, it is not necessary to form an n-side electrode between the light emitting portions (between mesas), so that the array can be further densified.

  In the above embodiment, a GaAs-based VCSEL using a semiconductor material of GaAs, AlAs, or AlGaAs has been exemplified. However, the present invention can also be applied to a VCSEL using another III-V group compound semiconductor. In the above embodiment, an n-type semiconductor layer is stacked on a substrate and a p-type semiconductor layer is stacked thereon. On the contrary, an n-type semiconductor layer is formed on a p-type semiconductor layer. The structure which laminates | stacks these semiconductor layers may be sufficient.

  The preferred embodiment of the present invention has been described in detail above, but the present invention is not limited to the specific embodiment, and various modifications can be made within the scope of the present invention described in the claims. Deformation / change is possible.

10: VCSEL array 100: Substrate 102: Contact layer 104: Lower DBR
106: Active region 108: Upper DBR
110: n-side electrode 112: extraction wiring 112A: end 114: electrode pad 114A: pad connection wiring 120: p-side electrode 122: extraction wiring 124: electrode pad 130: interlayer insulating film 130A, 130B: opening 140: insulating material 142 : Contact region 144: inclined surface 150: contact hole

Claims (13)

A surface-emitting type semiconductor laser in which a light emitting portion including a first conductive type first semiconductor multilayer reflector, an active region, and a second conductive type second semiconductor multilayer reflector is formed on a substrate. ,
A first wiring layer including a first extending portion electrically connected to the first semiconductor multilayer film reflecting mirror of the light emitting portion and extending in a first direction;
A second wiring layer including a second extending portion electrically connected to the second semiconductor multilayer film reflecting mirror of the light emitting portion and extending in the first direction;
An insulating member filling a groove formed around the light emitting part,
The surface-emitting type semiconductor laser, wherein the first extending portion extends on a bottom surface side of the insulating member, and the second extending portion extends on an upper surface side of the insulating member. 2. The surface-emitting type semiconductor laser according to claim 1, wherein at least a part of the first extending portion and the second extending portion overlap when viewed from the emission surface side. A plurality of light emitting portions are formed on the substrate, and at least one of the first extending portion and the second extending portion between two adjacent light emitting portions, between electrode pads, or between a light emitting portion and an electrode pad. The surface emitting semiconductor laser according to claim 1, wherein the portion overlaps when viewed from the exit surface side. The surface emitting semiconductor laser further includes a pad forming region isolated from the light emitting unit through the groove, and a first electrode pad connected to the first wiring layer is formed on the pad forming region. A second electrode pad connected to the second wiring layer is formed, and the first electrode pad and the second electrode pad are on the same plane. A surface-emitting type semiconductor laser described in 1. The surface emitting semiconductor according to claim 4, wherein the groove extends into the pad formation region, and at least one of the first electrode pad and the second electrode pad is formed on the insulating material. laser. The first wiring layer is electrically connected to the first semiconductor multilayer film reflector through a connection hole formed in the groove, and the connection hole is directly below the second wiring layer. The surface emitting semiconductor laser according to claim 1, wherein the surface emitting semiconductor laser is not formed. The first wiring layer is electrically connected to the first semiconductor multilayer film reflecting mirror through a connection hole formed in the groove, and the connection hole is partially formed on the pad formation region side. The surface emitting semiconductor laser according to claim 1, wherein the surface emitting semiconductor laser is used. The insulating member has an exposed region that exposes an end portion of the first wiring layer, and the first electrode pad is connected via a pad connection wiring formed on an inclined surface of the insulating member in the exposed region. 5. The surface emitting semiconductor laser according to claim 4, wherein the pad connection wiring, the first electrode pad, and the second electrode pad are connected to the first wiring layer, and are formed simultaneously. 9. The surface emitting semiconductor laser according to claim 1, wherein the insulating member is made of a low dielectric constant material having a relative dielectric constant smaller than 4. A surface-emitting type semiconductor laser according to any one of claims 1 to 9,
A surface-emitting type semiconductor laser device including an external lead electrically connected to the surface-emitting type semiconductor laser. A surface-emitting type semiconductor laser according to any one of claims 1 to 9,
An optical transmission device comprising: an optical member optically coupled to the surface emitting semiconductor laser. The optical member is a multi-core fiber in which a plurality of cores are formed in one optical fiber, and laser light emitted from a plurality of light emitting units of the surface-emitting type semiconductor laser is a plurality of cores of the multi-core fiber. The optical transmission device according to claim 11, wherein the optical transmission device is incident on each of the optical transmission devices. A surface-emitting type semiconductor laser according to any one of claims 1 to 9,
Condensing means for condensing the laser light emitted from the surface-emitting type semiconductor laser array on a recording medium;
A mechanism for scanning the recording medium with the laser beam condensed by the condensing means;
An information processing apparatus.

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