JP2014073959A - Oxide sintered body, and method for producing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-density oxide sintered body for a target containing indium oxide as a component, and a method for producing the same.SOLUTION: Provided is a high-density oxide sintered body for a target containing indium oxide as a main component, density of which has been made high by adding a suitable concentration of tin to the oxide sintered body containing indium oxide as the main component. Specifically provided is an InOsintered body containing tin as an added element whose relative density is made 98% or higher by adding tin so that the ratio of number of the tin atoms relative to the sum of all metal elements in the sintered body becomes 0.01 to 0.2%. Also provided is an InOhaving zirconium added so that the ratio of number of the zirconium atoms relative to the sum of all metal elements becomes 0.5 to 8%.

Description

  The present invention relates to an indium oxide-based oxide sintered body and a method for producing the same.

  There are various oxide sintered bodies containing indium oxide as a component. Among them, ITO (Indium tin oxide) composed of indium-tin-oxygen is the most suitable for various flat panel display devices such as liquid crystal display devices. It is a widely used transparent conductor.

  There are various uses of the transparent conductor other than the flat panel display. Among them, in recent years, the demand for the window layer electrode material on the light incident surface side of the solar cell is increasing. When ITO is used as a window layer electrode material for solar cells, while ITO has the advantage of low resistivity, the carrier concentration is high, resulting in poor transmittance in the long wavelength region of wavelength near 1200 nm or longer, and the long wavelength of sunlight. Since the area cannot be used effectively, there is a problem that the conversion efficiency of the solar cell deteriorates.

Therefore, recently, as a material for a solar cell window layer replacing ITO, indium-oxygen (In ₂ O ₃ , Indium oxide) in which hydrogen is added (Non-patent Document 1), indium-zirconium-oxygen (In ₂ O _3). : Zr) (Non-Patent Document 2) and the like have been proposed. These materials have almost the same resistivity as that of ITO, but since the electron mobility is high, the carrier concentration can be kept low, so that the reduction in transmittance in the long wavelength region can be suppressed. Have.

  However, although these prior art documents describe the optical and electrical properties of materials, a manufacturing method using a sputtering method that can form a film uniformly over a large area is appropriate for industrial use. For this purpose, it is important that the sintered body of these materials has characteristics necessary as a sputtering target, but there is no description regarding target characteristics.

  There are various properties required as a sputtering target, and among these, the density of the sintered body is important. If the density is low, even when there is no particular problem at the beginning of sputter deposition, if the sputtering is continued for a long time, nodules that are black projections are generated on the target surface, and nodule parts Because of the high resistance, abnormal discharge occurs from that portion, and sputtering cannot be continued, or particles adhere to the produced film and a good film cannot be obtained.

  Regarding the densification of ITO, there have been various reports so far (Patent Document 1), and the densification has been made. Regarding the above-mentioned target composed of indium-oxygen and the target composed of indium-zirconium-oxygen. At present, a high-density sintered body has not been obtained.

In recent years, indium-gallium-zinc-oxygen (In ₂ O ₃ —ZnO—Ga ₂ O ₃ : IGZO) attracts attention as a transparent semiconductor material among oxide sintered bodies containing indium oxide as a component. (Non-patent Document 3).
In addition to having a higher mobility than amorphous silicon, this material has advantages such as being capable of film formation at room temperature and being excellent in surface flatness because it is amorphous. Since this material can obtain a thin film by sputtering deposition of a target, it is important that the target has a high density, but until now it has not been possible to obtain a high-density target.

Prior arts related to the present invention include adding copper or the like to ITO (Patent Document 1), adding tin to indium-zinc-oxygen (In ₂ O ₃ —ZnO: IZO) (Patent Document 1). , IGZO (indium-gallium-zinc-oxygen) added with tin (Patent Documents 3 and 4), indium oxide-containing hydroxide containing tin (Patent Document 5), etc. However, the difference between the invention disclosed therein and the present invention will be described later.

JP-A-7-54132 Japanese Patent No. 3721080 JP 2008-214697 A JP 2008-163442 A JP 2008-137825 A

Japanese Journal of Applied Physics Vol.46, No.28, 2007, pp.L685-L687 Journal of Applied Physics, 101, 063705 (2007) Nature, Vol.432, 25, November 2004, 488

  An object of this invention is to provide the high-density oxide sintered compact which uses indium oxide as a component, and its manufacturing method.

As a result of diligent research, the present inventors have found that the density of an oxide grain sintered body can be increased by adding an appropriate concentration of tin to an oxide sintered body containing indium oxide as a component. Completed.
According to the present invention, the following oxide sintered bodies and methods for producing them can be provided.

1. In ₂ O ₃ sintered body containing tin as an additive element, the ratio of the number of tin atoms to the total number of atoms of all the metal elements in the sintered body is 0.01 to 0.2% In ₂ O ₃ sintered body characterized by having a relative density of 98% or more,
2. In ₂ O ₃ sintered body containing zirconium in addition to the additive elements, the ratio of the number of zirconium atoms to the total number of atoms of all metal elements in the sintered body is 0.5 to 8% The In ₂ O ₃ sintered body according to 1 above, wherein the relative density is 98% or more,
3. In ₂ O ₃ —ZnO—Ga ₂ O ₃ sintered body containing tin as an additive element, the ratio of the number of atoms of tin to the total number of atoms of all metal elements in the sintered body is 0.01 In ₂ O ₃ —ZnO—Ga ₂ O ₃ sintered body, characterized in that it has a relative density of not less than 0.2% and a relative density of 98% or more,
4). When the sintered body is expressed as In _x Ga _y Zn _z O _a , 0.2 ≦ x / (x + y) ≦ 0.8, 0.1 ≦ z / (x + y + z) ≦ 0.5, a = (3 / 2) In ₂ O ₃ —ZnO—Ga ₂ O ₃ sintered body according to ₃ above, which is in the range of x + (3/2) y + z. 6. The method for producing a sintered body according to any one of 1 to 5, wherein the sintered body is produced by sintering at a sintering temperature of 1400 to 1500 ° C. in an oxygen atmosphere.

  According to the present invention, since a high-density oxide sintered body can be provided, when these sintered bodies are used as a sputtering target, generation of nodules on the target surface is suppressed even after long-time sputtering. It has an excellent effect that it has an effect of preventing abnormal discharge during sputtering and generation of particles on the film.

The content of the additive element in the oxide sintered body is defined by the ratio of the number of atoms of the additive element to the total number of atoms of all the metal elements in the sintered body.
For example, when tin is added to an oxide sintered body made of indium-oxygen, all metal elements contained in the sintered body are indium and tin, so that the number of indium atoms is In, the number of tin atoms Is represented by Sn, {Sn / (In + Sn) × 100} is the ratio of the number of tin atoms to the total number of atoms of all metal elements in the sintered body.
Similarly, when adding zirconium in addition to tin to an oxide sintered body made of indium-oxygen, all metal elements contained in the sintered body are indium, tin, and zirconium. In, Sn represents the number of tin atoms, and Zr represents the number of zirconium atoms, {Zr / (In + Sn + Zr) × 100} is the sum of the number of atoms of zirconium and the total number of atoms of all metal elements in the sintered body. It becomes the ratio to.
In addition, when tin is added to an oxide sintered body made of indium-gallium-zinc-oxygen, all metal elements contained in the sintered body are indium, gallium, zinc, and tin. When the number is In, the number of gallium atoms is Ga, the number of zinc atoms is Zn, and the number of tin atoms is Sn, [Sn / (In + Ga + Zn + Sn) × 100] is the number of tin atoms in the sintered body. This is the ratio of the total number of atoms of all metal elements.

In the oxide sintered body of the present invention, the ratio of the number of tin atoms in the sintered body is desirably 0.01 to 0.2%. This is because if the tin ratio is less than 0.01%, the effect of improving the density of the sintered body is reduced. On the other hand, when the ratio of tin exceeds 0.2%, not only the density of the sintered improving effect is saturated, since the tin is added is the role of electrical dopant, an In ₂ O ₃ sintered In the case of addition to a sintered body or an In ₂ O ₃ : Zr sintered body, more electrons are supplied from tin, and the transmittance in the long wavelength region is reduced by increasing the carrier concentration. In addition, in the case of addition to IGZO, an increase in the carrier concentration may make the semiconductor characteristics become conductive characteristics and deteriorate the on / off ratio of the manufactured transistor.
Furthermore, in order to make such characteristics better, the ratio of tin is preferably 0.05 to 0.2%, and more preferably 0.08 to 0.2%.

  In the oxide sintered body of the present invention, the ratio of zirconium in the sintered body is preferably 0.5 to 8%. This is because when the zirconium ratio is less than 0.5%, the number of electrons emitted from zirconium is small, and the conductivity is not improved. On the other hand, if the proportion of zirconium exceeds 8%, the electrons emitted from the zirconium are saturated and the zirconium acts as a neutral impurity scattering factor, lowering the electron mobility and lowering the conductivity. Because.

The composition range of IGZO is 0.2 ≦ x / (x + y) ≦ 0.8, 0.1 ≦ z / (x + y + z) ≦ 0.5, a = (3 when In _x Ga _y Zn _z O _a is used. / 2) x + (3/2) y + z. When the ratio of indium is higher than this range, the carrier concentration of the sputtered film increases and the on / off ratio, which is a device characteristic, is deteriorated. On the other hand, when the ratio of indium is lower than this range, the mobility of the sputtered film is lowered and the device characteristics are deteriorated.
In addition, although the atomic ratio of oxygen is defined as a = (3/2) x + (3/2) y + z as in the above equation, it is actually slightly smaller than this due to oxygen deficiency. However, since strict quantification is difficult, the present invention defines such a provision, but it is needless to say that this also includes a case where oxygen defects that are normally included in the manufacturing method are included. .

  When the ratio of zinc is higher than this range, the stability and moisture resistance of the film deteriorate. On the other hand, if the ratio of zinc is lower than this range, the amorphousness of the sputtered film is deteriorated and crystallized to deteriorate device characteristics.

  There are several reports regarding the technique of adding trace metal elements to an oxide sintered body containing indium oxide as a main component, but the technical differences from the present invention will be described below.

Patent Document 1 shows that a high-density ITO sintered body can be obtained by adding a metal element such as zinc to ITO. However, this technique is only about 90:10 in weight ratio of indium oxide and tin oxide, and sintering of ITO in which tin is added at a high concentration to the extent that it can be said that it is a constituent element in the oxide sintered body. In contrast to this, the present invention is a technique for improving the density. In order to increase the density of In ₂ O ₃ or In ₂ O ₃ : Zr or IGZO that does not contain tin as a constituent element like ITO. The invention is clearly different in that a small amount of tin is added.

  Patent Document 2 discloses a technique for reducing the bulk resistance of an IZO sputtering target by adding a small amount of tin to IZO. However, this technique utilizes the effect of allowing tin to act as an electrical dopant. 101-No. The results of No. 103 show that the bulk resistance decreases as the tin concentration increases, but as regards the density of the sintered body, conversely as the tin concentration increases. It is getting smaller.

  In other words, regarding IZO, tin addition has been shown to have an adverse effect on improving the density of the sintered body, and simply adding tin to an oxide sintered body mainly composed of indium oxide. For example, the effect of improving the density of the sintered body is not obtained, but depending on the type and concentration of not only indium oxide but also other constituent elements, there are various effects of tin addition. It has been found that by adding tin to an oxide sintered body containing indium as a main component, an effect of improving the density of the oxide sintered body can be obtained, and such an effect can be obtained. Is not suggested by the prior art, and conversely, simply adding tin has been shown to reduce the density of the sintered body, which was a hindrance to the idea. .

Patent Document 3 discloses a technique that can reduce the bulk resistance of a sputtering target by adding a predetermined concentration of a positive tetravalent or higher metal such as tin to IGZO.
However, this technique also uses the electric dopant effect of tin. Example 1 and sintered densities respectively in Comparative Examples 1 6.12 g / cm ^3, although it is described that was 5.98 g / cm ^3, in other embodiments and comparative examples, sintering Since there is no description about the body density, it is completely unknown whether or not the sintered body density really increases by adding tin.

Furthermore, since the above sintered body density is 6.379 g / cm ³ for InGaZnO ₄ , the relative density is 95.9% and 93.7%, respectively, which are very high as a sputtering target. It cannot be said.
This is because the target production process conditions in this technique are different from the process conditions of the present invention as will be described later, and the relative density of the sintered body depends on the process conditions of the present invention and the appropriate concentration of tin. The IGZO sintered body having a very high density of 98% or more can be obtained for the first time.

Patent Document 4 discloses a technique in which, as in Patent Document 3, a bulk resistance of a sputtering target can be reduced by adding a predetermined concentration of a positive tetravalent or higher metal such as tin to IGZO.
However, this technique also uses the electric dopant effect of tin. Example 1 and sintered densities respectively in Comparative Examples 1 6.06 g / cm ^3, although it is described that was 5.85 g / cm ^3, in other embodiments and comparative examples, sintering Since there is no description about the body density, it is completely unknown whether or not the sintered body density really increases by adding tin.

  Patent Document 5 shows that the tin concentration in the indium-containing hydroxide is 50 mass ppm or less. However, in this technique, when a metal such as lead or tin is contained as an impurity in the indium-containing aqueous solution, these impurity metals are precipitated and recovered as a residue, whereby the tin in the indium-containing hydroxide is recovered. This is to reduce the residual amount, and not to add tin positively in order to improve the density of the sintered body.

The oxide sintered body of the present invention can be produced by a process such as mixing, pulverization, and sintering of various raw material powders. For example, in the case of an IGZO sintered body, it can be produced as follows.
The raw material powder is indium oxide (In ₂ O ₃ ), gallium oxide (Ga ₂ O ₃ ), zinc oxide (ZnO), and tin oxide (SnO ₂ ), and the specific surface area is about 10 m ² / g. It is preferable to use one. When the specific surface area is small, the particle size is large, and the density of the sintered body is not sufficiently high.
In general, the larger the specific surface area, the higher the density of the sintered body tends to be. However, the effect of improving the sinterability is saturated only by increasing it further, and the price of the raw material powder itself is increased. It is also expensive and not economical.

The difference in specific surface area between the raw material powders is not necessarily the same, and conversely, if there is a slight difference, the sintered body density may be increased. In some cases, the same specific surface area may be advantageous for efficient mixing, but when calcining, there is a case where the calcining proceeds better if there is a difference in specific surface area. There is no problem until the difference is about 5 m ² / g.

  The raw material powder is weighed so as to have a desired composition ratio, and then mixed. Insufficient mixing causes each component to segregate in the manufactured target, resulting in a high resistivity region and a low resistivity region, and arcing due to charging in the high resistivity region during sputtering deposition. Therefore, sufficient mixing is necessary.

  For this purpose, for example, in a supermixer, the number of rotations is 2000 to 4000 rpm and the rotation time is 3 to 5 minutes. Since the raw material powder is an oxide, the atmospheric gas does not need to prevent the oxidation of the raw material in particular. Therefore, it is not necessary to use an expensive gas such as argon, and the atmospheric gas may be used. The mixing method may be a method such as long-time mixing using a ball mill, or any other method as long as it can achieve the purpose of uniform mixing of raw materials.

Next, the mixed powder is calcined in an electric furnace in an air atmosphere at a temperature range of 900 to 1100 ° C. for about 4 to 6 hours. Calcination has the effect of improving the density of the sintered body by reacting zinc oxide, which is easily volatilized at high temperature, with gallium oxide and changing it to spinel or the like which is difficult to volatilize.
However, depending on the optimization of the target manufacturing process conditions including the sintering conditions, a high-density sintered body may be obtained without necessarily performing the calcination, so the calcination step is not essential. .

Next, pulverization is performed. This is because the raw material powder is uniformly dispersed in the target of each composition. If fine pulverization is not performed sufficiently, raw material powder having a large particle size will be present, resulting in uneven composition depending on the location, causing abnormal discharge during sputter deposition. The calcined powder is put into an attritor together with zirconia beads and finely pulverized at a rotation speed of 200 to 400 rpm and a rotation time of 2 to 4 hours.
The fine pulverization is desirably performed until the particle size of the raw material powder becomes 1 μm or less, preferably 0.6 μm or less, of the average particle size (D50).

  Next, granulation is performed. This is to improve the flowability of the raw material powder and to make the filling state at the time of press molding sufficiently good. Granulation is performed by adjusting the amount of moisture so that the finely pulverized raw material becomes a slurry having a solid content of 40 to 60%. At this time, the inlet temperature is set to 180 to 220 ° C, and the outlet temperature is set to 110 to 130 ° C.

Next, press molding is performed. The granulated powder is press-molded under a condition of a surface pressure of 400 to 800 kgf / cm ^{2 and} a hold of 1 to 3 minutes. If the surface pressure is less than 400 kgf / cm ² , a molded body having a sufficient density cannot be obtained, and it is not necessary to increase the surface pressure to over 800 kgf / cm ² , and wasteful cost and energy are required, which is not preferable in production.

Next, it shape | molds on the conditions of a surface pressure of 1700-1900kgf / cm < ² >, and hold | maintaining for 1 to 3 minutes with a hydrostatic pressure pressurization apparatus (CIP). And it heats up to 700-900 degreeC by the temperature rising rate of 0.5-2.0 degreeC / min in oxygen atmosphere with an electric furnace, Then, it hold | maintains for 4-6 hours, Then, temperature rising speed of 0.5-5. After raising the temperature to 1400-1500 ° C. at 0 ° C./min, the temperature is maintained for 10-30 hours, and then the temperature is lowered at a furnace cooling rate or a cooling rate of 2.0-5.0 ° C./min. In this case, if the sintering temperature is lower than 1400 ° C., the sintered body does not become high density. On the other hand, if it exceeds 1500 ° C., volatilization of zinc oxide occurs, resulting in a decrease in sintering density and composition shift End up. There is also a cost problem that the life of the furnace heater is reduced.

If the holding time at the sintering temperature is shorter than 10 hours, the reaction between the raw material powders does not proceed sufficiently, and the density of the sintered body does not increase sufficiently, or the sintered body warps. Even if the sintering time exceeds 30 hours, unnecessary energy and time is required, which is not preferable for production.
If the rate of temperature increase is less than 0.5 ° C / min, it takes time to reach the predetermined temperature. If the rate of temperature increase is greater than 5.0 ° C / min, the temperature distribution in the furnace will be Even if it does not rise uniformly, unevenness occurs or the sintered body breaks. The sintered body obtained in this way can achieve high density.

  Examples 1 to 8 and Comparative Examples 1 to 4 are cases in which the ratio of tin to indium oxide was variously changed. These results are summarized in Table 1. Table 1 shows typical characteristics as evaluation.

First, the In ₂ O ₃ powder and SnO ₂ powder having an average particle size of about 2.0 μm were weighed in predetermined proportions as shown in Table 1, and then sufficiently mixed for 3 minutes at a super mixer 3000 rpm, and then zirconia beads. For 3 hours. After granulation, molding and held 2 min 2 min pressed at a surface pressure of 600 kgf / cm ^2, in hydrostatic pressure device (CIP) at a surface pressure of 1800kgf / cm ^2. Sintering is performed in an electric furnace at 1450 ° C. for 20 hours in an oxygen atmosphere to obtain an oxide sintered body. The density of the sintered body was measured by the Archimedes method, and the bulk resistance of the sintered body was measured by the four-terminal method.

A sintered body processed to a diameter of 6 inches and a thickness of 6 mm was used as a sputtering target, and was attached to a copper backing plate via indium metal. Argon gas was applied at a pressure of 0.5 Pa, a sputtering power of DC 500 W, and 20 kWh. The number of nodules on the target surface after sputtering was counted.
Moreover, when abnormal discharge was recognized during sputtering, it was described as “Yes” in the column of abnormal discharge in Table 1, and when it was not recognized, “No”.
These results are summarized in Table 1. The indium ratio is a ratio obtained by removing the sum of all metal elements excluding indium from the sum of all metal elements (100%).

  Examples 9 to 16 and Comparative Examples 5 to 8 are cases in which the ratio of tin is changed variously with respect to indium oxide and a predetermined amount of zirconium. The zirconium ratio was fixed at 2%.

First, after weighing each predetermined ratio as shown in Table 1 of In ₂ O ₃ powder, ZrO ₂ powder and SnO ₂ powder having an average particle diameter of about 2.0 μm, a sputtering target was prepared under the same conditions as in Example 1. Also, after sputtering for a long time, various characteristics of the target were evaluated.
These results are summarized in Table 1.

Examples 17 to 24 and Comparative Examples 9 to 12 are cases where the ratio of tin was changed variously with respect to the composition In: Ga: Zn = 1: 1: 1 of IGZO. Examples 25-32 and Comparative Examples 13-18 changed the sintering temperature when the ratio of tin was changed variously with respect to the composition In: Ga: Zn = 2: 2: 1 of IGZO. Is the case.
First, each raw material powder of indium oxide (In ₂ O ₃ ), gallium oxide (Ga ₂ O ₃ ), zinc oxide (ZnO), and tin oxide (SnO ₂ ) having an average particle diameter of about 1.6 to 4.6 μm is prepared. It weighed so that it might become a composition ratio of each predetermined metal element, and it mixed in air | atmosphere in the air | atmosphere at the rotation speed of 3000 rpm, and rotation time 4 minutes.

  The mixed powder was calcined in an electric furnace in an air atmosphere at 1000 ° C. for about 5 hours. The calcined powder was put into an attritor together with zirconia beads, and finely pulverized with a rotation speed of 300 rpm and a rotation time of 3 hours. The average particle diameter (D50) of the finely pulverized raw material powder was 0.59 μm.

The amount of water was adjusted so that the finely pulverized raw material powder became a slurry having a solid content of 50%, and the inlet temperature was set to 200 ° C. and the outlet temperature was set to 120 ° C. to perform granulation. The granulated powder of 400 kgf / cm ² surface pressure, after press-molded under the conditions of 1 minute hold at a surface pressure of 1800kgf / cm ² at hydrostatic pressure device (CIP), was molded under the conditions of 1 minute hold.

  Next, after raising the temperature to 800 ° C. at a heating rate of 1.0 ° C./min in an oxygen atmosphere in an electric furnace, holding for 5 hours, then raising the temperature to 1450 ° C. at a heating rate of 1.0 ° C./min , Held for 20 hours, and then cooled by furnace cooling.

After measuring the density and bulk resistance of the sintered body, it was processed into a sputtering target, and the number of nodules after long-time sputtering was evaluated. These results are summarized in Table 1.
As shown in Table 1, it can be seen that the examples of the present invention all have a high relative density and achieve 98% or more. As a result, in all of the embodiments of the present invention, the amount of nodules generated during sputtering is small, and abnormal discharge does not occur. It can also be confirmed that the bulk resistance value is maintained within an appropriate range.
On the other hand, the comparative example deviating from the present invention has a problem in that the relative density is low, the amount of nodules is large, and abnormal discharge occurs in some cases. About the comparative example from which the ratio of tin deviates from this invention, the transmittance | permeability of a long wavelength region reduced and the problem that a desired semiconductor characteristic was not acquired was produced.
From the above Examples and Comparative Examples, it can be seen that the sintered body of the present invention has excellent characteristics.

Since the indium oxide sintered body of the present invention has a high density, when used as a sputtering target, generation of nodules on its surface can be suppressed, and abnormal discharge during sputtering can be prevented. In addition, since the indium oxide sintered body of the present invention has a low bulk resistivity, the resistivity of a film formed by sputtering can be lowered, which is useful for forming a transparent conductive film.
Furthermore, since the indium oxide transparent conductive film of the present invention has high transmittance in the visible light region and infrared region, and has high electron mobility and low film resistivity, it is extremely useful as a transparent conductive film for solar cells.

Claims (5)

In ₂ O ₃ sintered body containing tin as an additive element, the ratio of the number of tin atoms to the total number of atoms of all the metal elements in the sintered body is 0.01 to 0.2% An In ₂ O ₃ sintered body having a relative density of 98% or more. In ₂ O ₃ sintered body containing zirconium in addition to the additive elements, the ratio of the number of zirconium atoms to the total number of atoms of all metal elements in the sintered body is 0.5 to 8% The In ₂ O ₃ sintered body according to claim 1, wherein the relative density is 98% or more. In ₂ O ₃ —ZnO—Ga ₂ O ₃ sintered body containing tin as an additive element, the ratio of the number of atoms of tin to the total number of atoms of all metal elements in the sintered body is 0.01 The In ₂ O ₃ —ZnO—Ga ₂ O ₃ sintered body, which is about 0.2% and has a relative density of 98% or more. When the sintered body is expressed as In _x Ga _y Zn _z O _a , 0.2 ≦ x / (x + y) ≦ 0.8, 0.1 ≦ z / (x + y + z) ≦ 0.5, a = (3 / 2) x + (3/2) in 2 O according to claim 3, characterized in that the range of _{y + z 3 -ZnO-Ga 2} O 3 sintered body.   The said sintered compact is manufactured by sintering at 1400-1500 degreeC in oxygen atmosphere, The manufacturing method of the sintered compact as described in any one of Claims 1-5 characterized by the above-mentioned.