JP2014066520A - Method for manufacturing radiation detector using gas amplification, and radiation detector using gas amplification - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain high definition in a radiation detector having a pixel electrode and using gas amplification, particularly by uniformly and finely forming a pixel electrode, and thereby, to increase detection sensitivity of the radiation detector.SOLUTION: A first mask and a second mask each comprising a dry film resist are formed on a principal surface and a back surface side of a metal substrate, respectively. The first mask includes a plurality of cylindrical first through-holes formed therein. The second mask includes: a plurality of cylindrical second through-holes formed at the same positions as the plurality of first through-holes; and a plurality of slot-like third through-holes formed as separated from the second through-holes via annular non-through-hole portions centering the respective cylindrical second through-holes. The metal substrate is subjected to a plating process via the first mask and the second mask so as to fill the plurality of first through-holes of the first mask, and the plurality of the second through-holes and the plurality of third through-holes with a first plating material and a second plating material, respectively, both having higher electric resistance than that of the metal substrate.

Description

  The present invention relates to a method for manufacturing a radiation detector using gas amplification, and a radiation detector.

  Pixel type radiation detectors have been used as radiation detectors utilizing gas amplification. In this radiation detector, for example, one wiring layer on the main surface side of the double-sided printed circuit board is composed of a strip cathode electrode, and the other wiring layer on the back surface side is composed of a strip anode electrode. An opening is formed, and a cylindrical anode electrode connected to the strip anode electrode on the back surface, that is, a pixel electrode is formed at the center of the opening.

  The radiation detector is disposed, for example, in a mixed gas of Ar and ethane. A predetermined voltage is applied between the pixel electrode and the strip cathode electrode.

  In the radiation detector, when predetermined radiation enters the detector, the gas is ionized to generate electrons, which are applied with a high voltage applied between the strip cathode electrode and the pixel electrode, In addition, a strong electric field generated due to the shape (shape anisotropy) of the pixel electrode as a point electrode causes an avalanche amplification. On the other hand, positive ions generated by electron avalanche amplification drift toward the surrounding strip cathode electrode.

  As a result, the target strip cathode electrode and pixel electrode are charged with holes and electrons, respectively. By detecting the positions of the strip cathode electrode and the pixel electrode where the electric charges are generated, the incident position in the radiation detector can be specified, and the radiation can be detected (Patent Document 1).

  In order to increase the detection sensitivity of the radiation detector using such gas amplification, it is necessary to increase the definition of the strip cathode electrode, the strip anode electrode, and the pixel electrode connected to the strip anode electrode. is there.

  In Patent Document 2, after producing a double-sided printed board having copper foil formed on both sides of a polyimide resin, the copper foil on the back side of this double-sided printed board is patterned to form a strip anode electrode, and the main surface of the double-sided printed board By irradiating carbon dioxide laser light from the side, a through hole is formed from the copper foil on the main surface side to the strip anode electrode on the back surface side, and copper is plated in the through hole to fill the through hole with copper A technique for manufacturing a radiation detector using gas amplification by forming the pixel electrode and then patterning the copper foil on the main surface side to form a strip cathode electrode is disclosed.

  However, in this technique, since the through hole for forming the pixel electrode is formed by using laser light, the inner wall surface of the through hole is rough, and the through hole is filled with copper by plating. However, it is not possible to uniformly fill the through holes with copper. For example, there is a case where a portion not filled with copper is generated in the through hole, or the copper is formed in a needle shape due to excessive progress of plating. Further, since the beam diameter and intensity of the laser light are not uniform from the main surface side to the back surface side of the double-sided printed board, the hole diameter of the through hole may be different between the main surface side and the back surface side.

  For this reason, there arises a problem that pixel electrodes having a uniform and fine size cannot be formed, and copper grown in a needle shape is a cause of discharge when a high voltage is applied when used as a radiation detector. Therefore, there has been a problem that the radiation detector cannot be operated stably.

JP 2002-6047 JP 2002-90465 A

  The present invention relates to a radiation detector using gas amplification having a strip cathode electrode, a strip anode electrode, and a pixel electrode connected to the strip anode electrode. An object is to increase the detection sensitivity of the radiation detector.

In order to achieve the above object, the present invention provides:
Preparing a metal substrate made of a plate-like first metal;
Forming a first dry film resist on the main surface of the metal substrate, and forming a second dry film resist thinner than the first dry film on the back surface;
A plurality of exposed main surfaces of the metal substrate arranged so as to be along at least one side of the first dry film resist and along a direction perpendicular to the at least one side. Forming a first mask having a cylindrical first through-hole formed thereon,
The second dry film resist is subjected to exposure and development processing, and a plurality of the same shape as the first through hole is provided at a position corresponding to the plurality of first through holes so that the back surface of the metal substrate is exposed. A cylindrical second through hole is formed, and a ring-shaped non-through hole portion concentrically surrounding the second through hole is formed outside the second through hole. Forming a second mask formed with a plurality of slot-shaped third through-holes defined by strip-shaped non-penetrating portions along one side;
The metal substrate is plated through the first mask and the second mask, and the plurality of first through holes of the first mask are more electrically resistant than the first metal. And filling the plurality of first plating materials made of the second metal having a large size with the plurality of second through holes and the plurality of third through holes of the second mask as the second metal. Filling with a plurality of second plating materials comprising:
Forming an insulating material so that the upper surfaces of the plurality of first plating materials remaining on the main surface of the metal substrate are exposed after peeling off the first mask and the second mask;
After peeling off the first mask and the second mask, performing a etching process using the plurality of second plating materials remaining on the back surface of the metal substrate as a mask, and patterning the metal substrate;
After forming a dry film resist on the insulating material, exposure and development are performed, and the plurality of first plating materials arranged in the direction along the direction orthogonal to the at least one side of the metal substrate are divided at equal intervals. Forming a third mask covering the strip portion defined to be exposed and exposing the remainder;
Plating is performed through the third mask, and a plurality of strip-shaped plating films formed so as to be in electrical contact with the top surfaces of the plurality of first plating materials are formed on the insulating material. With process,
A gas having a plurality of strip anode electrodes including the plurality of strip-shaped plating films, a plurality of strip cathode electrodes including the plurality of second plating materials, and a plurality of pixel electrodes including the plurality of first plating materials. The present invention relates to a method for manufacturing a radiation detector using gas amplification, characterized by manufacturing a radiation detector using amplification.

  According to the present invention, a first mask made of a dry film resist is formed on a main surface of a metal substrate that will later become a part of a pixel electrode of a radiation detector using gas amplification, and is formed on the first mask. The plurality of columnar first through holes are plated and filled with the first plating material. Since the plurality of first through holes can be formed vertically and horizontally in two directions perpendicular to each other of the metal substrate, the first plating material can be formed in the same manner. Therefore, the first plating material can constitute the pixel electrode.

  Moreover, the through-hole formed in the dry film resist is formed by performing exposure development processing on the dry film resist. The through hole thus formed has a smooth wall surface, a uniform diameter in the thickness direction, and can be easily miniaturized. For this reason, the plating material filled in the through-holes as described above by plating treatment can be uniform in size and fine. Therefore, according to the present invention, the pixel electrodes can be formed uniformly and finely, and the definition thereof can be increased.

  The plurality of strip cathode electrodes are formed of a second plating material filled in the plurality of third through holes of the second mask formed on the back surface of the metal substrate on which the first mask is formed. The plurality of columnar second through holes of the second mask, which is filled with a second plating material that forms part of the pixel electrode later, are formed in the plurality of columnar first through the metal substrate. It is formed at the same location as the through hole.

  As described above, in the present invention, after the first mask and the second mask are initially formed on both surfaces of the metal substrate, a plurality of strip cathode electrodes and a plurality of pixel electrodes are configured using these masks. Yes.

  The mask on both sides of the metal substrate has a structure in which, after forming a dry film resist on both sides of the metal substrate, one end of two mask patterns called a book method is fixed to the dry film resist, for example. The mask patterns can be formed by arranging the two mask patterns so as to sandwich the metal substrate and the dry film resist formed on both surfaces thereof, and then patterning simultaneously or sequentially. Therefore, the positioning of the first mask and the second mask can be sufficiently suppressed, and the alignment of these masks can be performed accurately.

  As a result, the relative position of the strip cathode electrode and the pixel electrode of the radiation detector using gas amplification, in particular, the relative position of the upper portion of the pixel electrode protruding into the opening of the strip cathode electrode can be defined with high accuracy.

  Further, as described above, in the present invention, the metal substrate is patterned using the second plating material as a mask, and forms part of the pixel electrode and the strip cathode electrode. That is, the pixel electrode and the strip cathode electrode include a first metal layer made of a low-resistance metal substrate and a second metal layer made of a high-resistance second plating material (specifically, a laminate thereof). Comes to include. For this reason, since the overall resistance of the pixel electrode and the strip cathode electrode is reduced, even when a radiation detector using gas amplification is driven and a high voltage is applied between these electrodes, arc discharge or the like is not caused. Even if the arc discharge is less likely to occur, it occurs between the second metal layers having high resistance and disappears in a short time, so that damage to the electrodes can be reduced.

  As described above, according to the present invention, in a radiation detector using gas amplification having a strip cathode electrode, a strip anode electrode, and a pixel electrode connected to the strip anode electrode, the pixel electrode is particularly uniform and fine. In order to increase the definition, the detection sensitivity of the radiation detector can be increased.

It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. It is the II-II sectional view taken on the line of FIG. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. It is the IV-IV sectional view taken on the line of FIG. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. FIG. 6 is a sectional view taken along line VI-VI in FIG. 5. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. FIG. 10 is a sectional view taken along line XX in FIG. 9. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. It is the XIII-XIII sectional view taken on the line of FIG. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. It is the XV-XV sectional view taken on the line of FIG. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. It is the XVII-XVII sectional view taken on the line of FIG. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. It is the XX-XX sectional view taken on the line of FIG. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment. It is process drawing in the manufacturing method of the radiation detector using gas amplification in an embodiment.

  Hereinafter, the features and other advantages of the present invention will be described based on embodiments for carrying out the invention.

  1 to 22 are process diagrams in a method for manufacturing a radiation detector using gas amplification according to the present embodiment. In these drawings, in order to clarify the characteristics of the manufacturing method in the present embodiment, the vicinity of the pixel electrode of the radiation detector in the manufacturing process is shown enlarged.

  1 and 2, 3 and 4, 5 and 6, 9 and 10, 12 and 13, 14 and 15, 16 and 17, 19 and 20. FIG. 5 shows a perspective view and a corresponding sectional view in the same manufacturing process. In addition, each sectional view is a II-II line, IV-IV line, VI-VI line, XX line, XIII-XIII line, XV-XV line, XVII-XVII line and XX-XX line in the corresponding perspective view. The case where it cut along is shown.

  First, as shown in FIG. 1 and FIG. 2, the main surface and the back surface are rectangular (rectangular or square), and the cross-sectional area perpendicular to the thickness direction is uniform, that is, a rectangular columnar metal substrate. 11 is prepared. Since the metal substrate 11 is a component of a pixel electrode of a radiation detector that uses gas amplification later, it is made of a metal having a good electrical conductivity, such as copper, gold, silver, aluminum, or the like. However, it is generally inexpensive and has been used for many years as an electrode material for radiation detectors, and is made of highly reliable copper.

  Next, as shown in FIGS. 3 and 4, the first dry film resist 12 is formed on the main surface of the metal substrate 11, and the first dry film resist 12 is thinner on the back surface of the metal substrate 11 than the first dry film resist 12. 2 dry film resist 13 is formed. Note that the thickness t1 of the first dry film resist 12 corresponds to the height of a portion of the pixel electrode embedded in the insulating layer later, so that the thickness is, for example, 40 μm to 80 μm. Further, the thickness t2 of the second dry film resist 13 will later constitute a part of the pixel electrode exposed to the outside of the insulating layer, so that it has a thickness of 10 μm to 30 μm, for example.

  As the first dry film resist 12 and the second dry film resist 13, for example, a general-purpose one in which a photosensitive resin layer is sandwiched between a protective film and a support film can be used. Asahi Kasei / SUNFORT, DuPont / MPF, Hitachi Chemical / Fatec and Nichigo Morton / NIT can be used.

  Next, as shown in FIGS. 5 and 6, the first dry film resist 12 is subjected to exposure and development processing, and a plurality of first through holes having a columnar shape are formed so that the main surface of the metal substrate 11 is exposed. A first mask 12X on which 12A is formed is formed. In the present embodiment, a plurality of columnar first through holes 12A are formed so as to be arranged along the X direction and the Y direction along the sides perpendicular to each other of the metal substrate 11.

  Specifically, as shown in FIG. 7, a first mask 12X is formed in which a plurality of columnar first through holes 12A arranged so as to extend in the X direction and the Y direction are formed. .

  Next, the second dry film resist 13 is subjected to exposure and development processing so that the back surface of the metal substrate 11 is exposed, and is located at the same position as the plurality of columnar first through holes 12A. A plurality of cylindrical second through-holes 13A are formed, and the second through-holes 13A are surrounded by the ring-shaped non-through-hole portions 13XY around the second through-holes 13A, and the metal substrate 11 A second mask 13X in which a plurality of slot-like third through holes 13B are formed so as to extend along the Y direction along one side is formed.

  Specifically, as shown in FIG. 8, a plurality of cylindrical second through-holes 13A arranged so as to extend in the X direction and the Y direction are formed so as to extend in the Y direction. A second mask 13X is formed in which a plurality of slot-like third through holes 13B are arranged.

  The first through hole 12A, the second through hole 13A, and the third through hole 13B are formed by general-purpose techniques, for example, physical etching such as ion milling, etching such as dry etching, wet etching, or laser processing. be able to.

  Next, as shown in FIGS. 9 and 10, the metal substrate 11 is plated through the first mask 12X and the second mask 13X, and a plurality of columnar shapes formed on the first mask 12X. The first through hole 12A is filled with the first plating material 14, and the plurality of cylindrical second through holes 13A and the plurality of slot-shaped third through holes formed in the second mask 13X. 13B is filled with the second plating material 15.

  A general-purpose method can be used for the plating treatment. For example, a plating base layer (seed is formed in the plurality of cylindrical through holes 12A, the plurality of cylindrical through holes 13A, and the plurality of slot through holes 13B by electroless plating. After forming the layer, the first plating material 14 and the second plating material 15 are filled by performing electrolytic plating. Electrolytic plating can be applied to a metal substrate without a seed layer.

  The first plating material 14 and the second plating material 15 are, for example, arc discharge when a high voltage is applied to the pixel electrode and the strip cathode electrode in the radiation detector using gas amplification, as will be described below. From the viewpoint of reducing electrode damage due to suppression, the second metal is made of a second metal having a higher electrical resistance than the first metal constituting the metal substrate 11 and having different etching characteristics with respect to the first metal. For example, when copper, gold, silver, aluminum, or the like is used as the first metal, nickel, nickel cobalt, nickel chromium, nickel phosphorus, or the like can be used as the second metal.

  Next, the first mask 12X and the second mask 13X are peeled off to expose the plurality of first plating materials 14 and the plurality of second plating materials 15. As the second mask 13X is removed, the second plating material 15 is not formed around the second plating material 15 located below the first plating material 14, and the ring-shaped non-pattern is not formed. A formation region, that is, an opening 15h is formed.

  Next, as shown in FIGS. 12 and 13, an insulating material 16 is formed on the main surface of the metal substrate 11 so as to cover the exposed first plating materials 14 and to expose the upper portions thereof.

  The insulating material 16 later becomes an insulating layer that electrically insulates between the strip anode electrode and the strip cathode electrode of the radiation detector. The insulating material 16 is a potting resin or transfer mold resin mainly composed of an epoxy resin, and further a liquid sealing. It is formed by forming a mold resin such as a stopper, a batch sealing molding tape and a high heat-resistant coating material, or affixing a sheet-like prepreg of a thermosetting resin such as an epoxy resin. The thickness of the insulating material 16 corresponds to the height of the first plating material 14, that is, the thickness t2 of the second dry film resist 13.

  The insulating material 16 formed as described above is dried by plasma irradiation or heating as necessary. Further, when the surface of the insulating material 16 is uneven and has a surface roughness on the order of 10 μm, it is smoothed by performing an appropriate polishing treatment. On the other hand, since the dry film resist is formed again on the surface of the insulating material 16, for example, the surface of the insulating material 16 has a surface roughness of about 1 μm so as to improve the adhesion between the dry film resist and the insulating material 16. The roughening process may be performed so as to be.

  Next, as shown in FIGS. 14 and 15, the metal substrate 11 is etched using the second plating material 15 as a mask, and the portion of the metal substrate 11 exposed at the opening 15 h is removed to remove the metal. The substrate 11 is patterned so as to match the formation pattern of the second plating material 15. The etching process may be either dry etching or wet etching. In particular, when the metal substrate 11 is composed of the above-described copper or the like and the second plating material 15 is composed of nickel or the like, it is preferable to etch with a ferric chloride aqueous solution. Thereby, only the metal substrate 11 can be easily selectively etched.

  Next, as shown in FIGS. 16 and 17, after a dry film resist is formed on the insulating material 16 in the same manner as described above, exposure development processing is performed, and the metal substrate 11 extends in the Y direction along one side. Then, a plurality of strip portions defined so as to divide the plurality of first plating materials 14 arranged in the same Y direction at equal intervals are covered, and a third mask 17X in which the remaining portions are exposed is formed. Specifically, as shown in FIG. 18, a third mask 17X having a plurality of strip portions 17XY extending in the Y direction is formed.

  Next, as shown in FIGS. 19 to 21, a plating process is performed through the third mask 17 </ b> X to electrically contact the upper surface of the plurality of first plating materials 14 on the insulating material 16, in the Y direction. A plurality of strip-shaped plating films 18 are formed along the line.

  As a result, as shown in FIG. 22, the plurality of strip-shaped plating films 18 form the plurality of strip anode electrodes 21 as they are, and the first plating material 14 out of the plurality of second plating materials 15 described above. The outer portion and the patterned metal substrate 11 (stacked body thereof) constitute a plurality of strip cathode electrodes 23.

  Further, the plurality of first plating materials 14, the patterned metal substrate 11 and the plurality of second plating materials 15 (laminated bodies) positioned immediately below the plurality of first plating materials 14 extend upward from the plurality of strip anode electrodes 21. A plurality of pixel electrodes 24 having upper portions exposed at the openings 23h of the plurality of strip cathode electrodes 23 are formed. Furthermore, the insulating material 16 constitutes the insulating layer 22 that electrically insulates the plurality of strip anode electrodes 21 and the plurality of strip cathode electrodes 23 as described above. As a result, the radiation detector 20 using the target gas amplification can be obtained.

  In the present embodiment, a first mask 12X made of a first dry film resist 12 is formed on the main surface of a metal substrate 11 that will later become a part of a pixel electrode of a radiation detector using gas amplification. A plurality of columnar first through holes 12A formed in one mask 12X is plated and filled with a first plating material 14 that also becomes a part of the pixel electrode.

  Further, the through-hole 12A formed in the first dry film resist 12 is formed by subjecting the first dry film resist 12 to exposure and development processing. The through-hole 12A formed in this way has a smooth wall surface, a uniform diameter in the thickness direction, and can be easily miniaturized. For this reason, the first plating material 14 filled in the through hole 12A as described above by the plating process can be uniform in size and fine. For this reason, according to the present embodiment, the pixel electrodes can be formed uniformly and finely, and high definition thereof can be achieved.

  Specifically, the pixel electrode 24 having a fine and high aspect ratio with a diameter of the pixel electrode 24 of 30 μm or less and a height of 50 μm or more can be formed. The lower limit value of the diameter of the pixel electrode 24 is determined by the light diffraction limit in the exposure and development processing for the first dry film resist 12, and depends on the wavelength of the light source used. At present, the lower limit is about 15 μm. On the other hand, the height limit for forming the pixel electrode 24 with high accuracy depends on the intensity of the light source used and the material composition of the first dry film resist 12, but is about 100 μm, for example.

  The plurality of strip cathode electrodes 23 are filled in the plurality of third through holes 13B of the second mask 13X formed on the back surface of the metal substrate 11 on which the first mask 12X is formed. The plurality of columnar second through holes 13A of the second mask 13X, which is formed by the plating material 15 and is filled with the second plating material 15 that later constitutes part of the pixel electrode, is formed on the metal substrate 11. It is formed at the same location as the plurality of cylindrical first through holes 12A.

  Thus, in this embodiment, after forming the first mask 12X and the second mask 13X on both surfaces of the metal substrate 11, the plurality of strip cathode electrodes 23 and the plurality of pixel electrodes 24 are formed using these masks. I am trying to configure it.

  The masks 12X and 13X on both surfaces of the metal substrate 11 are formed by forming dry film resists 12 and 13 on both surfaces of the metal substrate 11, and then, for example, one end of two mask patterns called a book system is formed on these dry film resists. Using a mask pattern configured to be fixed, the two mask patterns are arranged so as to sandwich the metal substrate 11 and the dry film resists 12 and 13 formed on both surfaces thereof, and then patterned simultaneously or sequentially. Can be formed. Therefore, the positioning of the first mask 12X and the second mask 13X can be sufficiently suppressed, and the alignment of the masks 12X and 13X can be performed accurately.

  As a result, the relative position of the strip cathode electrode 23 and the pixel electrode 24 of the radiation detector 20 using gas amplification, in particular, the relative position of the upper portion of the pixel electrode 24 protruding into the opening 23h of the strip cathode electrode 23 with high accuracy. Can be defined.

  In the present embodiment, the metal substrate 11 is patterned using the second plating material 15 as a mask, and constitutes part of the pixel electrode 24 and the strip cathode electrode 23. That is, the pixel electrode 24 and the strip cathode electrode 23 are composed of a first metal layer made of the low-resistance metal substrate 11 and a second metal layer made of the high-resistance second plating material 15 (specifically, these metal layers). Laminate). For this reason, since the overall resistance of the pixel electrode 24 and the strip cathode electrode 23 is reduced, even when the radiation detector 20 using gas amplification is driven and a high voltage is applied between these electrodes, the arc Even if discharge or the like is difficult to occur and arc discharge occurs, it occurs between the second metal layers having high resistance and disappears in a short time, so that damage to the electrode can be reduced.

  The present invention has been described in detail based on the above specific examples. However, the present invention is not limited to the above specific examples, and various modifications and changes can be made without departing from the scope of the present invention.

DESCRIPTION OF SYMBOLS 11 Plate-shaped metal substrate 12 1st dry film resist 12X 1st mask 13 2nd dry film resist 13X 2nd mask 14 1st plating material 15 2nd plating material 16 Insulation material 17X 3rd mask 18 Strip Electrode 20 Radiation Detector Using Gas Amplification 21 Strip Anode Electrode 22 Insulating Layer 23 Strip Cathode Electrode 24 Pixel Electrode

Claims (3)

Preparing a metal substrate made of a plate-like first metal;
Forming a first dry film resist on the main surface of the metal substrate, and forming a second dry film resist thinner than the first dry film on the back surface;
A plurality of exposed main surfaces of the metal substrate arranged so as to be along at least one side of the first dry film resist and along a direction perpendicular to the at least one side. Forming a first mask having a cylindrical first through-hole formed thereon,
The second dry film resist is subjected to exposure and development processing, and a plurality of the same shape as the first through hole is provided at a position corresponding to the plurality of first through holes so that the back surface of the metal substrate is exposed. A cylindrical second through hole is formed, and a ring-shaped non-through hole portion concentrically surrounding the second through hole is formed outside the second through hole. Forming a second mask formed with a plurality of slot-shaped third through-holes defined by strip-shaped non-penetrating portions along one side;
The metal substrate is plated through the first mask and the second mask, and the plurality of first through holes of the first mask are more electrically resistant than the first metal. And filling the plurality of first plating materials made of the second metal having a large size with the plurality of second through holes and the plurality of third through holes of the second mask as the second metal. Filling with a plurality of second plating materials comprising:
Forming an insulating material so that the upper surfaces of the plurality of first plating materials remaining on the main surface of the metal substrate are exposed after peeling off the first mask and the second mask;
After peeling off the first mask and the second mask, performing a etching process using the plurality of second plating materials remaining on the back surface of the metal substrate as a mask, and patterning the metal substrate;
After forming a dry film resist on the insulating material, exposure and development are performed, and the plurality of first plating materials arranged in the direction along the direction orthogonal to the at least one side of the metal substrate are divided at equal intervals. Forming a third mask covering the strip portion defined to be exposed and exposing the remainder;
Plating is performed through the third mask, and a plurality of strip-shaped plating films formed so as to be in electrical contact with the top surfaces of the plurality of first plating materials are formed on the insulating material. With process,
A gas having a plurality of strip anode electrodes including the plurality of strip-shaped plating films, a plurality of strip cathode electrodes including the plurality of second plating materials, and a plurality of pixel electrodes including the plurality of first plating materials. A method of manufacturing a radiation detector using gas amplification, characterized by manufacturing a radiation detector using amplification.   The method of manufacturing a radiation detector using gas amplification according to claim 1, wherein the plating material constituting the pixel electrode has a diameter of 20 μm or less. A plurality of strip cathode electrodes having a plurality of circular openings formed on the main surface of the insulating layer;
A plurality of strip anode electrodes formed on the back surface of the insulating layer and orthogonal to the plurality of strip cathode electrodes;
A plurality of pixel electrodes extending on each of the plurality of strip anode electrodes, each penetrating through the insulating layer and having a tip exposed at a substantially central portion of the opening;
The plurality of strip cathode electrodes and the plurality of pixel electrodes each have a first electrode layer made of a first metal and an electric resistance larger than that of the first metal formed on the first electrode layer. A method for producing a radiation detector using gas amplification, comprising: a second electrode layer made of a second metal.

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