JP2014060352A - Manufacturing method of semiconductor wafer for photoelectric conversion element, photoelectric conversion element manufacturing method, semiconductor wafer for photoelectric conversion element and photoelectric conversion element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor wafer for a photoelectric conversion element in which an in-plane boundary between a bus bar part and a semiconductor is electrically divided in a thickness direction of the semiconductor without using a dedicated mask obtained by photo-lithography and which can extract electricity generated by optical energy from the plane uniformly.SOLUTION: A manufacturing method of a semiconductor wafer for a photoelectric conversion element comprises an etching process of etching semiconductor lamination parts 10, 20, 40, 50 by a diffusion-limited etchant by using a finger electrode part 20 and a bus bar electrode part 10 as a mask, and a groove 80 is formed between the semiconductor lamination part 40 immediately under the bus bar electrode part 10 and the semiconductor lamination part 40 under a region on which the finger electrode part 20 and the bus bar electrode part 10 are not formed.

Description

  The present invention relates to a method for manufacturing a semiconductor wafer for photoelectric conversion elements, a method for manufacturing a photoelectric conversion element, a semiconductor wafer for photoelectric conversion elements, and a photoelectric conversion element, and more particularly, in-plane without using a dedicated photolithography mask. The method of manufacturing a semiconductor wafer for a photoelectric conversion element and a method for producing a photoelectric conversion element capable of uniformly taking out electricity generated by light energy from the plane is electrically divided in the thickness direction of the semiconductor The present invention relates to a manufacturing method, a semiconductor wafer for photoelectric conversion elements, and a photoelectric conversion element.

In general, a photoelectric conversion element is a power device that converts light energy into electrical energy by utilizing a photovoltaic effect. The structure includes a semiconductor stacked portion having a photoelectric conversion portion having a structure in which a p-type semiconductor and an n-type semiconductor are joined, that is, a structure of a pn junction diode (photodiode).
When light is incident from the light incident surface, photogenerated carriers are generated in the semiconductor laminated portion region. A surface collecting electrode is provided on the light incident surface side in order to collect these as current and guide them to the output terminal. In order to effectively generate electricity by transmitting light well, this surface collection electrode collects electricity through a thin "finger electrode (branch electrode)" and efficiently gathers electricity generated while transmitting light. It consists of “bus bar electrode (stem electrode)”. On the other hand, a back electrode is provided on the opposite side of the light incident surface.

  In such a photoelectric conversion element, it is necessary to uniformly take out the photogenerated carrier as an electric current from the surface, but when the bus bar electrode formed on the surface and the output terminal are connected by wire bonding, the photo generated carrier collects up to the wire. In the process, current flows through the finger electrode and the bus bar electrode to cause a voltage drop, the voltage in the surface collection electrode becomes non-uniform, and a strong electric field is generated in the high voltage portion. Therefore, there is a possibility that the current generated in the lower part where the wire bonding is performed is concentrated locally and the electrode is melted by heat. In order to take out the current uniformly, it is necessary to separate the bus bar electrode portion where the high electric field is applied from the semiconductor portion and to produce a structure in which the current is not easily concentrated locally.

  For example, the one described in Patent Document 1 relates to a method for etching a multi-layer structure semiconductor. This Patent Document 1 describes a method for eliminating etching nonuniformity in the depth direction when a diffusion-controlled etching solution is used. As a mask pattern in the case of using a diffusion-limited etching solution, a mask formed so that the area of the mask portion is made larger than the etching portion and the etching solution is evenly supplied to the etching portion so that the etching rate becomes uniform. A method of performing etching using the method is described.

JP-A-9-64401

However, in a photoelectric conversion element having a surface collecting electrode, in order to extract current uniformly, it is necessary to separate the bus bar electrode portion and the semiconductor portion where a high electric field is applied and to make a structure in which the current is not easily concentrated locally. is there.
A physical means such as dicing is conceivable as a method for performing element isolation of a multilayer structure semiconductor. However, when the elements are separated by dicing, there is a problem that the cross section becomes rough and the photoelectric conversion characteristics deteriorate. On the other hand, as a method for performing element isolation without roughening the cross section, there is a method for performing element isolation by wet etching using an etchant (liquid etching material).

  When element isolation is performed by wet etching, a diffusion-controlled etchant that has a merit that uniform etching can be performed without being affected by the composition of the semiconductor layer and the dependence on the surface direction is small is widely used. In the vicinity where there is an unetched portion such as a resist pattern, there is a problem in that the etching rate increases and etching unevenness occurs.

Although the etching unevenness can be suppressed by using the multilayer structure semiconductor etching method described in Patent Document 1 described above, a process for producing a mask by dedicated photolithography is required, and the process becomes complicated. was there.
The present invention has been made in view of such problems, and an object of the present invention is to provide an in-plane boundary between the bus bar portion and the semiconductor in the thickness direction of the semiconductor without using a dedicated photolithography mask. Of a semiconductor wafer for photoelectric conversion elements, a method for manufacturing a photoelectric conversion element, a semiconductor wafer for photoelectric conversion elements, and a photoelectric conversion element capable of uniformly taking out electricity generated by light energy from within the plane There is to do.

  As a result of intensive studies to solve the above-described problems, the inventors of the present invention have a substrate, a semiconductor stacked portion having a photoelectric conversion portion and a barrier layer formed on the photoelectric conversion portion, and the semiconductor stacked portion on the semiconductor stacked portion. A semiconductor wafer comprising a formed finger electrode portion and a bus bar electrode wider than the finger electrode portion and connected to the finger electrode portion, with the finger electrode portion and the bus bar electrode portion as a mask, diffusion controlled type An etching process for etching a semiconductor wafer with an etchant is provided, and a groove portion is formed between a semiconductor laminated portion immediately below the bus bar electrode portion and a semiconductor laminated portion below the region where the finger electrode portion and the bus bar electrode portion are not formed. It was found that the above problems can be solved by the method for producing a semiconductor wafer for photoelectric conversion elements, and the present invention was completed. Which it has led to.

  The present invention has been made to achieve such an object, and the invention according to claim 1 is directed to a substrate (50), a photoelectric conversion unit (41) formed on the substrate (50), and A semiconductor laminated portion (40) having a barrier layer (42) formed on the photoelectric conversion portion (41), a finger electrode portion (20) formed on the semiconductor laminated portion (40), and the fingers For a semiconductor wafer laminate (10, 20, 40, 50) that is wider than the electrode part (20) and includes a bus bar electrode part (10) to which the finger electrode part (20) is connected. Using the finger electrode portion (20) and the bus bar electrode portion (10) as a mask, and etching the semiconductor wafer laminate (10, 20, 40, 50) with a diffusion-controlled etchant. Thus, the semiconductor laminated portion (40) immediately below the bus bar electrode portion (10) and the semiconductor laminated portion below the region where the finger electrode portion (20) and the bus bar electrode portion (10) are not formed on the upper portion. (40), a groove (80) is formed between the semiconductor wafer for photoelectric conversion elements.

According to a second aspect of the present invention, in the first aspect of the present invention, the semiconductor stacked portion (40) is a layer containing Ga and As.
The invention according to claim 3 is the invention according to claim 1 or 2, characterized in that the barrier layer (42) is AlGaAs.
According to a fourth aspect of the present invention, in the first, second, or third aspect of the invention, the semiconductor stacked portion (40) further forms a contact layer (43) on the barrier layer (42). It is characterized by that.

  The invention described in claim 5 further includes a dicing step of dicing the semiconductor wafer for photoelectric conversion elements according to any one of claims 1 to 4, and includes a substrate (50) and the substrate (50). A semiconductor multilayer part (40) having a photoelectric conversion part (41) formed on the substrate and a barrier layer (42) formed on the photoelectric conversion part (41), and formed on the semiconductor multilayer part (40). A finger electrode part (20), a bus bar electrode part (10) which is wider than the finger electrode part (20) and to which the finger electrode part (20) is connected, and the bus bar electrode part (10) A method for producing a photoelectric conversion element comprising: manufacturing a photoelectric conversion element comprising a groove (80) formed in the semiconductor laminated part (40) around an end region not in contact with the finger electrode part (20) It is.

  The invention according to claim 6 is a substrate (50), a photoelectric conversion part (41) formed on the substrate (50), and a barrier layer (42) formed on the photoelectric conversion part (41). ), A finger electrode portion (20) formed on the semiconductor stack portion (40), and wider than the finger electrode portion (20), and the finger electrode A bus bar electrode (10) to which the part (20) is connected, the semiconductor stacked part (40) immediately below the bus bar electrode part (10), and the finger electrode part (20) and the bus bar electrode part (10 ) Is a semiconductor wafer for photoelectric conversion elements, characterized in that a groove (80) is provided between the semiconductor laminated portion (40) under the region where no) is formed.

The invention according to claim 7 is the invention according to claim 6, wherein the semiconductor stacked portion (40) is a layer containing Ga and As.
The invention according to claim 8 is the invention according to claim 6 or 7, characterized in that the barrier layer (42) is AlGaAs.
The invention according to claim 9 is the invention according to claim 6, 7 or 8, wherein the semiconductor stacked portion (40) further comprises a contact layer (43) on the barrier layer (42). It is characterized by.
The invention according to claim 10 is a photoelectric conversion element manufactured by the method for manufacturing a photoelectric conversion element according to claim 5.

  According to the present invention, the boundary between the bus bar portion and the semiconductor in the plane is electrically divided in the thickness direction of the semiconductor without using a dedicated photolithography mask, and the electricity generated by the light energy is uniformly distributed from the plane. The manufacturing method of the semiconductor wafer for photoelectric conversion elements which can be taken out, the manufacturing method of a photoelectric conversion element, the semiconductor wafer for photoelectric conversion elements, and a photoelectric conversion element can be provided.

It is a perspective view for demonstrating embodiment of the semiconductor wafer for photoelectric conversion elements which concerns on this invention. FIG. 2 is a cross-sectional structure diagram of a semiconductor lamination portion of the photoelectric conversion element semiconductor wafer shown in FIG. 1. (A) thru | or (d) is a figure which shows the various patterns of the bus-bar electrode part of the photoelectric conversion element of this embodiment. (A), (b) is a figure which shows an example of the method of dicing the semiconductor wafer for photoelectric conversion elements of this invention, and obtaining a photoelectric conversion element.

Embodiments of the present invention will be described below with reference to the drawings.
The present invention provides a semiconductor laminated portion having a photoelectric conversion portion and a barrier layer formed on the photoelectric conversion portion, a finger electrode portion formed on the semiconductor laminated portion, and wider than the finger electrode portion. In addition, the present invention relates to a photoelectric conversion element provided with a bus bar electrode to which finger electrode portions are connected, a photoelectric conversion element semiconductor wafer used for manufacturing the photoelectric conversion element, and a manufacturing method thereof.

FIG. 1 is a perspective view for explaining an embodiment of a semiconductor wafer for photoelectric conversion elements according to the present invention. The semiconductor wafer 1 for photoelectric conversion elements of this embodiment includes a substrate 50, a semiconductor laminated portion 40 having a photoelectric conversion portion 41 formed on the substrate 50 and a barrier layer 42 formed on the photoelectric conversion portion 41. A finger electrode portion 20 formed on the semiconductor laminated portion 40, a bus bar electrode 10 wider than the finger electrode portion 20 and connected to the finger electrode portion 20, and the bus bar electrode portion 10 A groove portion 80 is provided between the semiconductor stacked portion 40 immediately below and the semiconductor stacked portion 40 below the region where the finger electrode portion 20 and the bus bar electrode portion 10 are not formed. An output terminal 30 is connected to the bus bar electrode 10. The semiconductor wafer laminate is composed of a bus bar electrode 10, finger electrode portion 20, semiconductor laminate portion 40, and substrate 50. Reference numeral 60 denotes a substrate laminate, which includes the substrate 50 and the semiconductor laminate 40.
The semiconductor stacked unit 40 is a layer containing Ga and As. The barrier layer 42 is AlGaAs. In addition, the semiconductor stacked unit 40 further includes a contact layer 43 on the barrier layer 42.

<Photoelectric conversion element>
The photoelectric conversion element of the present embodiment is a power device that converts light energy into electrical energy using the photovoltaic effect, and has a surface electrode composed of finger electrodes 20 and bus bar electrodes 10 on the surface. . Moreover, since the boundary between the bus bar portion and the semiconductor in the plane is electrically divided in the height direction of the semiconductor, the current can be collected without being affected by the electric field distribution in the surface electrode.
Such a photoelectric conversion element can be applied to a solar cell, a photodiode, a phototransistor, or the like that uses photoelectric conversion characteristics as a mechanism. In addition, being able to take out power uniformly from the surface also means that power can be supplied uniformly to the surface at the same time, and can also be applied to light emitting diodes and semiconductor lasers for the same purpose.

<Semiconductor laminated part>
2 is a cross-sectional structural view of the semiconductor stacked portion of the semiconductor wafer for photoelectric conversion elements shown in FIG. 1, and is a cross-sectional view taken along line AA ′ in FIG. In the present embodiment, the semiconductor stack 40 is formed on a semiconductor substrate such as Si or GaAs on the MOCVD (Metal Organic Chemical Deposition) or MBE (Molecular Beam Epitaxy). It is obtained by forming the photoelectric conversion portion 41 having a structure in which a p-type semiconductor and an n-type semiconductor are joined using a technique. The structure to be formed is selected according to the wavelength of light to be subjected to photoelectric conversion. For example, when it is desired to convert sunlight into electric energy, a pn junction of Si or GaAs is preferably used. Moreover, in order to absorb light having a wide wavelength range, a multi-junction structure in which a plurality of pn junctions are joined may be employed.

In the present embodiment, the semiconductor stacked unit 40 is provided with a barrier layer 42 that functions as an etch stop layer while preventing surface recombination above the photoelectric conversion unit 41 described above. For example, AlGaAs or InGaP for GaAs pn junctions, AlInP for pn junctions for InGaP, and AlInSb for pn junctions for InSb use a material having a wider band gap than the semiconductor used for pn junctions as a barrier layer. Can do. In the case of using a compound semiconductor of ternary, it may be the sum of the cognate elements they match substantially with other metal selected, for example, in the case of _{AlGaAs, Al X Ga (1-} x) As (1> X > 0).

The barrier layer 42 preferably has a selectivity with respect to the etchant. Further, a contact layer 43 made of a semiconductor layer may be further provided on the barrier layer 42 to improve the electrical contact with the surface collection electrode.
The contact layer 43 is made of a semiconductor material that has a small energy barrier with respect to the electrode and can easily form an ohmic junction. It is preferable that the semiconductor material is easily brought into ohmic contact by doping impurities at a high concentration. An example of the contact layer 43 is GaAs doped with impurities at a high concentration when Au is used for the electrode. The contact layer may have a structure that is formed only directly under the electrode in order to increase the amount of light absorption in the photoelectric conversion portion in accordance with the wavelength of light that is to be subjected to photoelectric conversion.

<Collector electrode>
The photoelectric conversion element of the present embodiment has a thin light-receiving surface (surface not on the substrate side) for efficiently collecting electricity generated while transmitting light in order to transmit light well and effectively generate power. A surface electrode comprising a “finger electrode” and a “bus bar electrode” for collecting electricity through the finger electrode is provided.

  3A to 3D are diagrams showing various patterns of the bus bar electrode portion of the photoelectric conversion element of the present embodiment. The bus bar electrode part 10 may be one as shown in FIG. 3A, or may be connected to both ends of the finger electrode part 20 as shown in FIG. ) May be arranged so as to be connected to and cover the finger electrode portion 20 as shown in FIG. 3), or the adjacent bus bar electrode portions 10 may be arranged as finger electrode portions as shown in FIG. 20 may be electrically connected to each other.

Further, the number of finger electrode portions 10 is not particularly limited as long as it is one or more, but from the viewpoint of efficiently collecting generated electricity, a plurality of finger electrode portions 10 are preferable, and the plurality of finger electrode portions are arranged at high density on the light receiving surface. It is more preferable.
In order to perform selective etching with a diffusion-controlled etchant, the bus bar electrode portion 10 must be thicker than the finger electrode portion 20. The width and thickness of the electrode can be appropriately changed so as to perform selective etching corresponding to the selection ratio of the semiconductor stacked portion 40 and the barrier layer 42 and the composition of the etchant.

  As the electrode material, a material generally used as an electrode such as a metal such as Au, Ag, or Cu, or a transparent conductive material such as indium tin oxide (ITO) or graphene can be used. Preferably, it is resistant to an etchant and does not change before and after etching.

<Etching conditions for photoelectric conversion element>
The method for producing a semiconductor wafer for photoelectric conversion elements according to the present invention includes a substrate stack 50, a semiconductor stacked portion having a photoelectric conversion portion 41 formed on the substrate 50 and a barrier layer 42 formed on the photoelectric conversion portion 41. 40, a finger electrode portion 20 formed on the semiconductor laminate portion 40, and a bus bar electrode portion 10 which is wider than the finger electrode portion 20 and to which the finger electrode portion 20 is connected. The body (10, 20, 40, 50) has an etching process for etching the semiconductor wafer laminate 10, 20, 40, 50 with a diffusion-controlled etchant using the finger electrode portion 20 and the bus bar electrode portion 10 as a mask. By this etching process, the semiconductor stacked portion 40 directly below the bus bar electrode portion 10 and the finger electrode portion 20 and the bus bar on Forming the groove 80 between the semiconductor lamination portion 40 below the area where the electrode portions 10 are not formed.

Moreover, the manufacturing method of the photoelectric conversion element of this invention is equipped with the process of dicing the semiconductor wafer for photoelectric conversion elements obtained by the manufacturing method of the semiconductor wafer for photoelectric conversion elements mentioned above into a chip.
As the diffusion-controlled etchant, a hydrogen peroxide solution containing an acid or alkali whose pH is adjusted can be used. As the acid used for the diffusion-controlled etchant, inorganic acids such as hydrochloric acid and sulfuric acid, and organic acids such as citric acid and succinic acid can be used. As the alkali, ammonia or potassium hydroxide can be used. Acids and alkalis can be diluted with water and used in the form of an aqueous solution. Any material can be suitably used as long as it functions as a diffusion-controlled etchant for an object to be etched.

The diffusion-controlled etchant preferably has a pH greater than 6.0 and less than 9.0. When the pH is 6.0 or less, the etching rate is low and element isolation cannot be performed. Further, when the pH is 9.0 or more, the selectivity with the barrier layer 42 is lowered, and selective etching at the end of the bus bar electrode portion 10 becomes impossible.
The etched photoelectric conversion element may be formed with a protective layer made of an inorganic material such as SiO ₂ or a polymer such as polyimide, an antireflection film, or the like for the purpose of protecting the element or increasing the light capturing efficiency.

  Moreover, a photoelectric conversion element can be obtained by dicing a semiconductor wafer for photoelectric conversion elements into chips. At this time, from the viewpoint of downsizing the photoelectric conversion element and obtaining more photoelectric conversion elements from a single wafer, a scribe line for dicing is provided around the element in advance when forming the surface collecting electrode, and the scribe is performed. Dicing along the line is preferred. The method for forming the scribe line is not particularly limited, but is obtained by the method for manufacturing a semiconductor wafer for photoelectric conversion elements of the present embodiment, the semiconductor laminated portion 40 immediately below the bus bar electrode portion 10, and the finger electrode portion 20 and the bus bar on the upper portion. It is preferable to use a groove 80 formed between the semiconductor stacked portion 40 below the region where the electrode portion 10 is not formed as a scribe line because a process for forming a scribe line can be omitted.

4A and 4B are diagrams illustrating an example of a method for obtaining a photoelectric conversion element by dicing the semiconductor wafer for photoelectric conversion elements of the present invention. FIG. 4A is an example in which the bus bar electrode portion 10 is formed on one side of one photoelectric conversion element, and is formed in the vicinity of the side of the bus bar electrode portion 10 where the finger electrode portion 20 is not formed. The groove 80 can be diced as a scribe line. FIG. 4B is an example in which the periphery of one photoelectric conversion element is surrounded by the bus bar electrode portion 10, and etching is performed by not forming the bus bar electrode portion 10 around the dotted line portion to be diced. The groove 80 can be formed in the process, and the groove 80 can be diced as a scribe line.
The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above-described embodiments.

Hereinafter, the contents of the present invention will be described more specifically with reference to examples and comparative examples. In addition, this invention is not limited to each Example demonstrated below. Evaluation methods used in Examples and Comparative Examples are as follows.
1. Etching selectivity The semiconductor element on which the collector electrode was formed was etched with a diffusion-controlled etchant. At that time, the etching depths of the end portions of the bus bar electrode 10 and the finger electrode portion 20 were measured, and the quality of the etching selectivity was determined.

O: The pn junction layer is separated in the thickness direction by etching at the end portion of the bus bar electrode portion 10, and the photoelectric conversion portion of the semiconductor stacked portion 40 in the vicinity of the finger electrode portion 20 is not etched.
X: The pn junction layer is not separated in the thickness direction by etching at the end of the bus bar electrode portion 10. Alternatively, the photoelectric conversion part of the semiconductor stacked part 40 in the vicinity of the finger electrode part 20 is etched.

A GaAs pn junction was formed on the GaAs substrate 50, and Al _0.4 Ga _0.6 As was laminated thereon as a barrier layer 42 by 40 nm. The size of one photoelectric conversion element obtained when the wafer is cut out from the wafer is 10 mm × 10 mm. As a collecting electrode, a bus bar electrode (a: 10 mm, b: 1000 μm) and a finger electrode (c: 9 mm) as shown in FIG. , D: 5 μm), a resist pattern is formed by photolithography, and Au—Ge (Ge: 12 wt%) / Ni / Au = 40 nm / 10 nm / 300 nm is used as an electrode material. The EB deposition apparatus was used for deposition, and the resist was removed by lift-off.

  As a diffusion-controlled etchant, first, a citric acid aqueous solution (50 wt%) was prepared using citric acid monohydrate (manufactured by Kanto Chemical), and a citric acid aqueous solution (50 wt%) / hydrogen peroxide solution (30% : Manufactured by Kishida Chemical Co., Ltd.) / Water = 4/1/100 (mass ratio), and adjusted to pH 8.0 with aqueous ammonia (29%: manufactured by Kanto Chemical Co., Ltd.). After adjusting the liquid temperature to 23 ° C. using a thermostatic bath, the device was immersed and allowed to stand for 5 minutes for etching. Table 1 shows the results of measuring the step of the obtained element and evaluating the selectivity of etching.

  The same as in Example 1 except that the etchant was mixed with an aqueous citric acid solution / hydrogen peroxide solution / water = 4/1/100 (mass ratio) and adjusted to pH 7.0 with aqueous ammonia. A device was fabricated and evaluated. The obtained evaluation results are shown in Table 1.

Implementation was performed except that the etchant was mixed at a succinic acid aqueous solution (50 wt%) / hydrogen peroxide solution / water = 4/1/100 (mass ratio) and adjusted to pH 8.0 with ammonia water. A device was prepared and evaluated in the same manner as in Example 1. The obtained evaluation results are shown in Table 1.
[Comparative Example 1]
An element was fabricated and evaluated in the same manner as in Example 1 except that a pn junction was formed on the GaAs substrate 50 and a barrier layer 42 was not laminated. The obtained evaluation results are shown in Table 1.

The present invention relates to a method for manufacturing a semiconductor wafer for photoelectric conversion elements, a method for manufacturing a photoelectric conversion element, a semiconductor wafer for photoelectric conversion elements, and a photoelectric conversion element, and is excellent in in-plane uniformity of electric field distribution. It can be suitably used as a diode, a light emitting diode or a part thereof.

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 10 for photoelectric conversion elements Bus bar electrode part 20 Finger electrode part 30 Output terminal 40 Semiconductor laminated part 41 Photoelectric converting part 42 Barrier layer 43 Contact layer 50 Substrate 60 Substrate laminated body 70 Back surface electrode 80 Groove part

Claims (10)

A semiconductor laminated part having a substrate, a photoelectric conversion part formed on the substrate and a barrier layer formed on the photoelectric conversion part, a finger electrode part formed on the semiconductor laminated part, and the finger electrode And a bus bar electrode part to which the finger electrode part is connected, and a semiconductor wafer laminate having a width wider than the part,
Using the finger electrode portion and the bus bar electrode portion as a mask, an etching step of etching the semiconductor wafer laminate with a diffusion-controlled etchant,
By the etching step, a groove is formed between the semiconductor laminated portion immediately below the bus bar electrode portion and the semiconductor laminated portion below the region where the finger electrode portion and the bus bar electrode portion are not formed. A method for producing a semiconductor wafer for a photoelectric conversion element.   The method for producing a semiconductor wafer for a photoelectric conversion element according to claim 1, wherein the semiconductor stacked portion is a layer containing Ga and As.   The method for producing a semiconductor wafer for a photoelectric conversion element according to claim 1, wherein the barrier layer is AlGaAs.   The method for manufacturing a semiconductor wafer for a photoelectric conversion element according to claim 1, wherein the semiconductor stacked portion further forms a contact layer on the barrier layer. It further has a dicing process of dicing the semiconductor wafer for photoelectric conversion elements according to claim 1,
A semiconductor laminated part having a substrate, a photoelectric conversion part formed on the substrate and a barrier layer formed on the photoelectric conversion part, a finger electrode part formed on the semiconductor laminated part, and the finger electrode A bus bar electrode part to which the finger electrode part is connected, and a groove part formed in the semiconductor laminated part around the end region not in contact with the finger electrode part of the bus bar electrode part. A method for producing a photoelectric conversion element, comprising producing a photoelectric conversion element.   A semiconductor laminated part having a substrate, a photoelectric conversion part formed on the substrate and a barrier layer formed on the photoelectric conversion part, a finger electrode part formed on the semiconductor laminated part, and the finger electrode A bus bar electrode to which the finger electrode part is connected, the semiconductor laminated part directly below the bus bar electrode part, and the finger electrode part and the bus bar electrode part are not formed on the upper part. A semiconductor wafer for photoelectric conversion elements, comprising a groove portion between the semiconductor laminated portion below the region.   The semiconductor wafer for a photoelectric conversion element according to claim 6, wherein the semiconductor stacked portion is a layer containing Ga and As.   The semiconductor wafer for photoelectric conversion elements according to claim 6, wherein the barrier layer is AlGaAs.   The semiconductor wafer for a photoelectric conversion element according to claim 6, wherein the semiconductor stacked portion further includes a contact layer on the barrier layer.   A photoelectric conversion element manufactured by the method for manufacturing a photoelectric conversion element according to claim 5.

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