JP2014058722A - Mask apparatus for vacuum deposition, vapor deposition apparatus, and mask for vacuum deposition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a mask apparatus for vacuum deposition which improves productivity.SOLUTION: A mask apparatus for vacuum deposition 24 comprises a mask for vacuum deposition 28 which is made of a conductive material and heats itself, and an electrifying section 30 which electrifies the mask for vacuum deposition 28. The mask for vacuum deposition 28 is heated by electrification from the electrifying section 30. The mask for vacuum deposition 28 is made of carbon, SiC, or tungsten, for example. The mask for vacuum deposition 28 is heated to 500°C or higher for example by electrification from the electrifying section 30.

Description

  The present invention relates to a vacuum film formation mask device, a vapor deposition apparatus, and a vacuum film formation mask.

  Patent documents 1 and 2 are disclosing the vapor deposition apparatus provided with the substrate holder holding a board | substrate, the vapor deposition mask located between a vapor deposition source and a substrate holder, and the film-forming chamber which accommodates these inside. In this vapor deposition apparatus, the vapor deposition material evaporated from the vapor deposition source passes through the pattern opening of the vapor deposition mask and adheres to the substrate to be deposited, and a thin film having a shape corresponding to the pattern opening is formed on the substrate.

  The evaporated vapor deposition material does not pass through the pattern opening of a predetermined shape formed in the vapor deposition mask, but adheres to the surface of the vapor deposition mask and is deposited. If the vapor deposition material is deposited in the vicinity of the pattern opening in the vapor deposition mask, the shape of the pattern opening may change, and a thin film having a desired shape cannot be formed on the substrate, or the pattern opening may be clogged. Therefore, in the vapor deposition apparatuses described in Patent Documents 1 and 2, a cleaning process for removing the vapor deposition material deposited on the vapor deposition mask is performed. This cleaning process includes a step of resublimating the vapor deposition material attached to the vapor deposition mask using a heating means, and a step of immediately discharging the resublimated vapor deposition material from the exhaust port to the outside of the film formation chamber using a vacuum pump. Have. The cleaning process is performed for each film forming process or after a plurality of film forming processes are performed.

JP 2002-060926 A JP 2003-313654 A

  As described above, in the vapor deposition apparatuses described in Patent Documents 1 and 2, in order to clean the vapor deposition mask, it is necessary to stop the film forming process and perform the cleaning process. Therefore, productivity has been reduced.

  An object of the present invention is to provide a vacuum film formation mask apparatus, a vapor deposition apparatus, and a vacuum film formation mask capable of improving productivity.

  A vacuum film formation mask apparatus according to one aspect of the present invention is made of a conductive material, and includes a vacuum film formation mask that generates heat by itself and an energization unit that supplies current to the vacuum film formation mask. The mask generates heat by energization from the energization unit.

  In the vacuum film formation mask device according to one aspect of the present invention, the vacuum film formation mask is electrically connected to the energization unit, and itself generates heat by energization from the energization unit. Therefore, during the film forming process, the film forming material is difficult to deposit on the surface of the vacuum film forming mask. Therefore, the deformation of the pattern opening caused by the deposition of the film forming material on the surface of the vacuum film forming mask and the clogging of the pattern opening hardly occur. As a result, it is not necessary to stop the film forming process and perform the cleaning process, so that productivity can be greatly improved.

  The vacuum film formation mask may be made of carbon, SiC, tungsten, platinum, tantalum, or molybdenum.

  The vacuum film formation mask may generate heat to 500 ° C. or more by energization from the energization unit.

  A vapor deposition apparatus according to another aspect of the present invention includes any one of the above-described vacuum film formation mask apparatuses, a vacuum chamber in which the vacuum film formation mask is disposed, and a pressure in the vacuum chamber higher than a pressure in the vacuum chamber. And a controller for controlling the amount of current flowing from the current-carrying part to the vacuum film-forming mask so that the vacuum film-forming mask generates heat at a temperature equal to or higher than the temperature at which the vapor pressure of the vapor-deposited evaporation material increases.

  In the vapor deposition apparatus according to another aspect of the present invention, from the energization unit, the vacuum film formation mask generates heat above a temperature at which the vapor pressure of the vapor deposition material evaporated in the vacuum chamber becomes larger than the pressure in the vacuum chamber. The amount of energization to the vacuum film formation mask is controlled by the control unit. Therefore, the evaporated deposition material does not contact the surface of the vacuum film formation mask. Therefore, the shape of the pattern opening is always maintained. As a result, a thin film having a shape as designed can be formed on the film formation target.

  The vacuum film-formation mask according to another aspect of the present invention is made of carbon, SiC, tungsten, platinum, tantalum, or molybdenum, and itself generates heat when energized.

  In the vacuum film formation mask according to another aspect of the present invention, the mask itself generates heat when energized. Therefore, it is difficult for the film forming material to be deposited on the surface of the vacuum film forming mask that generates heat during the film forming process. Therefore, the deformation of the pattern opening caused by the deposition of the film forming material on the surface of the vacuum film forming mask and the clogging of the pattern opening hardly occur. As a result, it is not necessary to stop the film forming process and perform the cleaning process, so that productivity can be greatly improved.

  ADVANTAGE OF THE INVENTION According to this invention, the mask apparatus for vacuum film-forming which can aim at productivity improvement, a vapor deposition apparatus, and the mask for vacuum film-forming can be provided.

FIG. 1 is a diagram showing an outline of a vapor deposition apparatus according to this embodiment. FIG. 2A is a plan view showing a vacuum film formation mask, and FIG. 2B is a cross-sectional view taken along the line BB of FIG.

  Embodiments of the present invention will be described with reference to the drawings. However, the following embodiments are exemplifications for explaining the present invention and are not intended to limit the present invention to the following contents. In the description, the same reference numerals are used for the same elements or elements having the same function, and redundant description is omitted.

  As shown in FIG. 1, the vapor deposition apparatus 1 includes a vacuum chamber 10, a feed roll 12, a rotating drum 14, a take-up roll 16, guide rollers 18 and 20, a vapor deposition source 22, and a vacuum film forming device. A mask device 24 and a control unit 26 are provided. The vacuum chamber 10 is connected to a vacuum pump (not shown). By operating the vacuum pump, the gas in the vacuum chamber 10 is discharged to the outside, and the inside of the vacuum chamber 10 is maintained in a vacuum state (for example, 0.001 Pa or less).

  The feeding roll 12 has a cylindrical shape and is disposed in the vacuum chamber 10. On the cylindrical surface of the feeding roll 12, a film-shaped film formation target F is wound. The feed roll 12 is connected to a drive motor (not shown), and when the feed roll 12 is rotationally driven by the drive motor, the film formation target F is fed toward the rotary drum 14. In the present embodiment, the film formation target F is, for example, a PET film.

  The rotating drum 14 has a cylindrical shape and is disposed in the vacuum chamber 10. The film formation target F fed from the feed roll 12 reaches the cylindrical surface of the rotating drum 14 via the guide roller 18 and travels along the cylindrical surface of the rotating drum 14. As will be described in detail later, when the film formation target F travels on the cylindrical surface of the rotary drum 14, the vapor deposition material discharged from the vapor deposition source 22 is deposited on the film formation target F, and the film formation target Film formation on F is performed. The film formation target F is directed to the take-up roll 16 after film formation. The rotating drum 14 has a cooling function, and cools the film forming object F in a state where the film forming object F is in contact with the cylindrical surface of the rotating drum 14.

  The take-up roll 16 has a cylindrical shape and is disposed in the vacuum chamber 10. The winding roll 16 is connected to a drive motor (not shown) and is rotatable. The film formation target F formed on the film reaches the cylindrical surface of the take-up roll 16 via the guide roller 20 and is taken up by the take-up roll 16.

  The vapor deposition source 22 includes a crucible (not shown) in which a solid vapor deposition material (for example, Al, Zn, Cu) is accommodated, and an electron beam irradiation device (not shown). Is placed inside. The crucible opening (vapor deposition material) faces the cylindrical surface of the rotating drum 14. Therefore, when the electron beam from the electron beam irradiation device is irradiated onto the vapor deposition material in the crucible, the vapor deposition material evaporates, and the evaporated vapor deposition material is scattered toward the rotary drum 14. That is, the vapor deposition source 22 releases vapor of the vapor deposition material toward the rotating drum 14.

  The vacuum film formation mask device 24 includes a vacuum film formation mask 28 and an energization unit 30. The vacuum film forming mask 28 is disposed in the vacuum chamber 10 so as to be positioned between the rotary drum 14 and the vapor deposition source 22. As shown in FIG. 2, the vacuum film formation mask 28 is a flat plate having a rectangular shape. The thickness of the vacuum film formation mask 28 can be set to about 2 mm, for example. It is preferable that the thickness of the vacuum film-forming mask 28 is thinner because the heat capacity of the vacuum film-forming mask 28 is lowered and the temperature of the mask 28 is easily increased.

  A plurality of pattern openings 28 a having a predetermined shape are formed in the vacuum film formation mask 28. In the present embodiment, the pattern opening 28a has a cross shape, but the shape of the pattern opening 28a is not limited to this, and various shapes can be adopted according to the purpose of film formation. The vapor | steam of the vapor deposition material discharge | released from the vapor deposition source 22 passes the pattern opening 28a of the mask 28 for vacuum film-forming, reaches | attains the film-forming target F, and the thin film of the shape corresponding to the pattern opening 28a is a film-forming target A film is formed on the surface of F.

  The vacuum film formation mask 28 is electrically connected to the energization unit 30. The vacuum film formation mask 28 is made of a conductive material (for example, carbon, SiC, tungsten, platinum, tantalum, or molybdenum) that generates heat when energized from the energization unit 30.

  The control unit 26 is connected to the energization unit 30 and controls the energization amount from the energization unit 30 to the vacuum film formation mask 28. Specifically, the control unit 26 controls the energizing unit 30 so that the vacuum film-forming mask 28 is at a temperature higher than the temperature at which the vapor pressure of the vapor deposition material evaporated in the vacuum chamber 10 becomes higher than the pressure in the vacuum chamber 10. A current large enough to generate heat is passed through the vacuum film formation mask 28. For example, when the vapor deposition material accommodated in the crucible is Al, the control unit 26 controls the energizing unit 30 so that the vacuum film formation mask 28 generates heat at 850 ° C. or higher, so that the vapor pressure of Al is increased. (About 0.01 Pa) becomes larger than the pressure in the vacuum chamber 10 (for example, 0.001 Pa). When the vapor deposition material accommodated in the crucible is Zn, the control unit 26 controls the energization unit 30 so that the vacuum film formation mask 28 generates heat to 500 ° C. or higher, so that the vapor pressure of Zn (1 Pa Degree) becomes larger than the pressure in the vacuum chamber 10 (for example, 0.001 Pa). When the vapor deposition material accommodated in the crucible is Cu, the control unit 26 controls the energizing unit 30 so that the vacuum film formation mask 28 generates heat at 1200 ° C. or higher, whereby the vapor pressure of Cu (0 .About.01 Pa) is larger than the pressure in the vacuum chamber 10 (for example, 0.001 Pa).

  In the present embodiment as described above, the vacuum film formation mask 28 is electrically connected to the energization unit 30, and generates heat by energization from the energization unit 30. Therefore, it is difficult for the film forming material to be deposited on the surface of the vacuum film forming mask 28 that has generated heat during the film forming process. Therefore, the deformation of the pattern opening 28a caused by the deposition of the film forming material on the surface of the vacuum film forming mask 28 and the clogging of the pattern opening 28a hardly occur. As a result, it is not necessary to stop the film forming process and perform the cleaning process, so that productivity can be greatly improved.

  In the present embodiment, the energization unit 30 forms the vacuum film so that the vacuum film formation mask 28 generates heat above the temperature at which the vapor pressure of the vapor deposition material evaporated in the vacuum chamber 10 becomes higher than the pressure in the vacuum chamber 10. The magnitude of the current flowing through the mask 28 is controlled by the control unit 26. Therefore, the evaporated vapor deposition material does not contact the surface of the vacuum film formation mask 28. Therefore, the shape of the pattern opening 28a is always maintained. As a result, a thin film having a shape as designed can be formed on the film formation target F.

  As mentioned above, although embodiment of this invention was described in detail, this invention is not limited to above-described embodiment. For example, in the present embodiment, the film formation target F is a magnetic film, but the film formation target F may be a film of another material or may be another shape such as a substrate. Good.

  In the present embodiment, the present invention is applied to the vapor deposition apparatus 1, but the present invention can also be applied to other apparatuses (for example, a sputtering apparatus and a CVD apparatus) that perform film formation in a vacuum.

  DESCRIPTION OF SYMBOLS 1 ... Deposition apparatus, 10 ... Vacuum chamber, 24 ... Vacuum deposition mask apparatus, 26 ... Control part, 28 ... Vacuum deposition mask, 30 ... Current supply part.

Claims (5)

A vacuum film-formation mask made of a conductive material that generates heat;
An energization section for energizing the vacuum film formation mask,
The vacuum film-formation mask device, wherein the vacuum film-formation mask generates heat when energized from the energization unit.   The vacuum deposition mask apparatus according to claim 1, wherein the vacuum deposition mask is made of carbon, SiC, tungsten, platinum, tantalum, or molybdenum.   The vacuum deposition mask device according to claim 1, wherein the vacuum deposition mask generates heat to 500 ° C. or more when energized from the energization unit. A vacuum deposition mask apparatus according to any one of claims 1 to 3,
A vacuum chamber in which the vacuum film formation mask is disposed;
From the energizing portion to the vacuum film formation mask, the vacuum film formation mask generates heat so that the vapor pressure of the vapor deposition material evaporated in the vacuum chamber becomes higher than the pressure in the vacuum chamber. A vapor deposition apparatus comprising: a control unit that controls an energization amount.   A vacuum film-forming mask that is made of carbon, SiC, tungsten, platinum, tantalum, or molybdenum and that generates heat when energized.

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