JP2014049523A - Wire bonding method - Google Patents

Wire bonding method Download PDF

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JP2014049523A
JP2014049523A JP2012189559A JP2012189559A JP2014049523A JP 2014049523 A JP2014049523 A JP 2014049523A JP 2012189559 A JP2012189559 A JP 2012189559A JP 2012189559 A JP2012189559 A JP 2012189559A JP 2014049523 A JP2014049523 A JP 2014049523A
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capillary
wire
connection
connection location
flank
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Atsushi Hirakawa
敦史 平川
Takashi Nino
隆志 新濃
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Murata Manufacturing Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4845Details of ball bonds
    • H01L2224/48451Shape
    • H01L2224/48453Shape of the interface with the bonding area
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a wire bonding method capable of simply and efficiently bonding a wire at first and second connection portions extending at different angles.SOLUTION: First and second connection portions extend at different angles. A capillary 2 has a relief face 2y around a tip 2x. When an inclined angle of the capillary 2 to a connection portion 5 when a metal wire 44 is connected to the connection portion 5 is designated as A and an inclined angle of the relief face 2y of the capillary 2 is designated as B, A≤B is satisfied.

Description

本発明は、ワイヤボンディング方法に関し、詳しくは、異なる角度で延在する第1及び第2の接続箇所について行うワイヤボンディング方法に関する。   The present invention relates to a wire bonding method, and more particularly to a wire bonding method performed for first and second connection locations extending at different angles.

ワイヤボンディングは、通常、互いに平行に延在する第1及び第2の接続箇所について行うが、互いに非平行に、すなわち異なる角度で延在する第1及び第2の接続箇所についてワイヤボンディングしたい場合がある。   Wire bonding is usually performed for the first and second connection points extending in parallel with each other. However, there is a case where it is desired to wire bond for the first and second connection points extending non-parallel to each other, that is, at different angles. is there.

例えば図9の部分断面模式図に示す角速度センサ105は、パッケージ104の凹部内に、ICデバイス102と角速度センサ素子101とを備えている。ICデバイス102は、パッケージ104の凹部の底面である実装面104aに固定され、ワイヤ103を介して、ICデバイス102の端子部と、実装面104a上の電極部とが電気的に接続されている。角速度センサ素子101は、実装面104aに対して傾斜している傾斜面101aに固定され、ワイヤ106を介して、角速度センサ素子101の端子部と、実装面104a上の電極部とが電気的に接続されている。角速度センサ105が実装される基板は、水平から傾いた状態で使用される。そのときに、破線の矢印で示す角速度センサ素子101の軸は鉛直方向となる(例えば、特許文献1参照)。   For example, the angular velocity sensor 105 shown in the partial cross-sectional schematic diagram of FIG. 9 includes an IC device 102 and an angular velocity sensor element 101 in the recess of the package 104. The IC device 102 is fixed to the mounting surface 104a which is the bottom surface of the recess of the package 104, and the terminal portion of the IC device 102 and the electrode portion on the mounting surface 104a are electrically connected via the wire 103. . The angular velocity sensor element 101 is fixed to an inclined surface 101a that is inclined with respect to the mounting surface 104a, and the terminal portion of the angular velocity sensor element 101 and the electrode portion on the mounting surface 104a are electrically connected via a wire 106. It is connected. The substrate on which the angular velocity sensor 105 is mounted is used in a state inclined from the horizontal. At that time, the axis of the angular velocity sensor element 101 indicated by the dashed arrow is in the vertical direction (see, for example, Patent Document 1).

特開2009−41962号公報Japanese Unexamined Patent Publication No. 2009-41962

ワイヤボンディングは、例えば、次のように行う。まず、テーブル上に被接続物を載置し、ワイヤを導出するキャピラリを被接続物の第1の接続箇所に押し当て、ワイヤを第1の接続箇所に接続する。次いで、ワイヤが第1の接続箇所に接続された状態で、キャピラリとテーブルを相対的に移動させ、被接続物の第2の接続箇所にキャピラリを押し当て、ワイヤを第2の接続箇所に接続する。   Wire bonding is performed as follows, for example. First, an object to be connected is placed on the table, a capillary for leading the wire is pressed against the first connection location of the connection object, and the wire is connected to the first connection location. Next, in a state where the wire is connected to the first connection location, the capillary and the table are relatively moved, the capillary is pressed against the second connection location of the connected object, and the wire is connected to the second connection location. To do.

ワイヤを接続するとき、キャピラリは、接続箇所に垂直にする。前述した角速度センサ素子101に接続するワイヤ106のように、ワイヤを接続する第1及び第2の接続箇所が異なる角度で延在する場合、第1の接続箇所にワイヤを接続するときにはキャピラリが第1の接続箇所に垂直になり、第2の接続箇所にワイヤを接続するときにはキャピラリが第2の接続箇所に垂直になるように、被接続物とキャピラリの相対的な位置関係を変える必要がある。   When connecting the wires, the capillary is perpendicular to the connection location. When the first and second connection points connecting the wires extend at different angles, such as the wire 106 connected to the angular velocity sensor element 101 described above, the capillary is not connected when the wire is connected to the first connection point. It is necessary to change the relative positional relationship between the connected object and the capillary so that the capillary is perpendicular to the second connection location when the wire is connected to the first connection location and the wire is connected to the second connection location. .

被接続物とキャピラリの相対的な位置関係を変えるために、被接続物が載置されるテーブルの角度や、キャピラリを保持するヘッドの角度を変えるようにすることが考えられる。この場合、テーブルやヘッドの角度を変えることができる特別な構造を備えたワイヤボンディング装置が必要になる。   In order to change the relative positional relationship between the connected object and the capillary, it is conceivable to change the angle of the table on which the connected object is placed or the angle of the head holding the capillary. In this case, a wire bonding apparatus having a special structure that can change the angle of the table and the head is required.

あるいは、治具を介して被接続物をテーブルに載置し、治具を操作して、第1の接続箇所にワイヤを接続するときと、第2の接続箇所にワイヤを接続するときとで、被接続物の角度を変えるようにすることが考えられる。この場合、治具の構造が複雑になる。   Alternatively, the object to be connected is placed on the table via the jig, the jig is operated, and the wire is connected to the first connection location, and the wire is connected to the second connection location. It is conceivable to change the angle of the connected object. In this case, the structure of the jig becomes complicated.

いずれの場合も、第1の接続箇所にワイヤを接続した後に、第2の接続箇所に対応してテーブルやヘッド、治具の角度を変更する必要があり、作業の効率が低下する。   In either case, after connecting the wire to the first connection location, it is necessary to change the angles of the table, head, and jig corresponding to the second connection location, which reduces the efficiency of work.

本発明は、かかる実情に鑑み、異なる角度で延在する第1及び第2の接続箇所について、簡易に、かつ効率よくワイヤボンディングを行うことができるワイヤボンディング方法を提供しようとするものである。   In view of such a situation, the present invention intends to provide a wire bonding method capable of simply and efficiently performing wire bonding with respect to first and second connection portions extending at different angles.

本発明は、上記課題を解決するために、以下のように構成したワイヤボンディング方法を提供する。   In order to solve the above-described problems, the present invention provides a wire bonding method configured as follows.

ワイヤボンディング方法は、(i)被接続物の第1の接続箇所にキャピラリの先端を接近させ、前記キャピラリの前記先端から出ているワイヤを前記第1の接続箇所に接続する第1の工程と、(ii)前記ワイヤが前記第1の接続箇所に接続された状態で、前記被接続物の第2の接続箇所に前記キャピラリの前記先端を接近させ、前記キャピラリの前記先端から出ている前記ワイヤを前記第2の接続箇所に接続する第2の工程とを含む。前記第1及び第2の接続箇所は、異なる角度で延在する。前記キャピラリは、前記先端の周囲に逃げ面を有する。前記第1及び第2の工程において、前記接続箇所に前記ワイヤを接続するときの前記接続箇所に対する前記キャピラリの傾き角度(すなわち、前記接続箇所の法線と前記キャピラリの中心線とがなす角度)をA、前記キャピラリの前記逃げ面の傾き角度(すなわち、前記キャピラリの前記中心線に垂直な平面に対する前記逃げ面の傾き角度)をBとすると、
A≦B・・・(1)
を満たすようにする。なお、前記傾き角度A,Bは、0°〜90°の値で定義する。
The wire bonding method includes: (i) a first step of bringing a tip of a capillary close to a first connection location of an object to be connected, and connecting a wire coming out from the tip of the capillary to the first connection location; (Ii) In a state where the wire is connected to the first connection location, the tip of the capillary is brought close to the second connection location of the connected object, and the wire exits from the tip of the capillary. And a second step of connecting a wire to the second connection location. The first and second connection points extend at different angles. The capillary has a flank around the tip. In the first and second steps, an inclination angle of the capillary with respect to the connection location when the wire is connected to the connection location (that is, an angle formed between a normal line of the connection location and a center line of the capillary) A, the inclination angle of the flank of the capillary (that is, the inclination angle of the flank with respect to a plane perpendicular to the center line of the capillary) B,
A ≦ B (1)
To satisfy. The tilt angles A and B are defined by values from 0 ° to 90 °.

上記方法によれば、接続箇所にキャピラリの先端を接近させて接続箇所にワイヤを接続するときに、キャピラリの逃げ面と接続箇所との間の距離は、同じか、キャピラリの中心線から離れるほど大きくなるので、ワイヤを接続箇所に良好に接続することができる。式(1)を満たせば、第1及び第2の工程においてキャピラリを接続箇所に対して垂直にする必要はないので、簡易に、かつ効率よくワイヤボンディングを行うことができる。   According to the above method, when the tip of the capillary is brought close to the connection location and the wire is connected to the connection location, the distance between the flank face of the capillary and the connection location is the same or farther away from the center line of the capillary. Since it becomes large, a wire can be favorably connected to a connection location. If the expression (1) is satisfied, it is not necessary to make the capillary perpendicular to the connection location in the first and second steps, and therefore wire bonding can be performed easily and efficiently.

また、本発明は、上記課題を解決するために、以下のように構成したワイヤボンディング方法を提供する。   Moreover, in order to solve the said subject, this invention provides the wire bonding method comprised as follows.

ワイヤボンディング方法は、(i)被接続物の第1の接続箇所にキャピラリの先端を接近させ、前記キャピラリの前記先端から出ているワイヤを前記第1の接続箇所に接続する第1の工程と、前記ワイヤが前記第1の接続箇所に接続された状態で、前記被接続物の第2の接続箇所に前記キャピラリの前記先端を接近させ、前記キャピラリの前記先端から出ている前記ワイヤを前記第2の接続箇所に接続する第2の工程とを含む。前記第1及び第2の接続箇所は、異なる角度で延在する。前記第1及び第2の接続箇所の少なくとも一方に、予めバンプを形成しておき、前記第1及び第2の工程の少なくとも一方において、前記バンプを介して前記ワイヤを、前記第1及び第2の接続箇所の少なくとも一方に接続する。前記バンプが予め形成された前記接続箇所に対する前記バンプの高さをH、前記逃げ面に沿う方向の前記逃げ面の幅をW、前記バンプが予め形成された前記接続箇所に前記ワイヤを接続するときに当該接続箇所に対する前記キャピラリの傾き角度(すなわち、当該接続箇所の法線と前記キャピラリの中心線とがなす角度)をA、前記キャピラリの前記逃げ面の傾き角度(すなわち、前記キャピラリの前記中心線に垂直な平面に対する前記逃げ面の傾き角度)をBとすると、
H≧W×sin(A−B)・・・(2)
を満たすようにする。なお、前記傾き角度A,Bは、0°〜90°の値で定義する。
The wire bonding method includes: (i) a first step of bringing a tip of a capillary close to a first connection location of an object to be connected, and connecting a wire coming out from the tip of the capillary to the first connection location; In a state where the wire is connected to the first connection location, the tip of the capillary is brought close to the second connection location of the connected object, and the wire coming out from the tip of the capillary is And a second step of connecting to the second connection location. The first and second connection points extend at different angles. Bumps are formed in advance in at least one of the first and second connection locations, and the wires are connected to the first and second via the bumps in at least one of the first and second steps. Connect to at least one of the connection points. The height of the bump with respect to the connection location where the bump is formed in advance is H, the width of the clearance surface in the direction along the clearance surface is W, and the wire is connected to the connection location where the bump is formed in advance. Sometimes the inclination angle of the capillary with respect to the connection location (that is, the angle between the normal of the connection location and the center line of the capillary) is A, and the inclination angle of the flank of the capillary (that is, the capillary When the inclination angle of the flank relative to a plane perpendicular to the center line is B,
H ≧ W × sin (AB) (2)
To satisfy. The tilt angles A and B are defined by values from 0 ° to 90 °.

上記方法によれば、バンプを形成することにより、ワイヤを接続箇所に良好に接続することができる。式(2)を満たせば、第1及び第2の工程においてキャピラリを接続箇所に対して垂直にする必要はないので、簡易に、かつ効率よくワイヤボンディングを行うことができる。   According to the above method, by forming the bump, the wire can be favorably connected to the connection portion. If the expression (2) is satisfied, it is not necessary to make the capillary perpendicular to the connection location in the first and second steps, and therefore wire bonding can be performed easily and efficiently.

本発明によれば、キャピラリの逃げ面の傾き角度Bと接続箇所に対するキャピラリの傾き角度Aが所定の条件式を満たすようにすることによって、異なる角度で延在する第1及び第2の接続箇所について、簡易に、かつ効率よくワイヤボンディングを行うことができる。   According to the present invention, the first and second connecting portions extending at different angles by satisfying the predetermined inclination of the inclination angle B of the flank face of the capillary and the inclination angle A of the capillary with respect to the connection portion. Can be easily and efficiently wire-bonded.

被接続物の部分断面模式図である。(実施例1)It is a partial cross section schematic diagram of a to-be-connected thing. Example 1 接続部分の拡大断面図である。(説明例1)It is an expanded sectional view of a connection part. (Explanation example 1) プル強度試験の結果を示すグラフである。(実施例1)It is a graph which shows the result of a pull strength test. Example 1 バンプの説明図である。(実施例2)It is explanatory drawing of a bump. (Example 2) バンプの説明図である。(実施例2)It is explanatory drawing of a bump. (Example 2) 接続部分の拡大断面図である。(実施例2)It is an expanded sectional view of a connection part. (Example 2) 最低バンプ高さの説明図である。(実施例2)It is explanatory drawing of the minimum bump height. (Example 2) キャピラリの要部拡大断面図である。(説明例2)It is a principal part expanded sectional view of a capillary. (Explanation example 2) 被接続物の部分断面模式図である。(従来例)It is a partial cross section schematic diagram of a to-be-connected thing. (Conventional example)

以下、本発明の実施の形態について、図1〜図8を参照しながら説明する。   Hereinafter, embodiments of the present invention will be described with reference to FIGS.

<実施例1> 実施例1のワイヤボンディング方法について、図1〜図3を参照しながら説明する。   <Example 1> The wire bonding method of Example 1 will be described with reference to FIGS.

図1は、被接続物10の部分断面図である。図1に示すように、被接続物10は、パッケージ12に形成された凹部13内に、第1のチップ20及び第2のチップ30が固定されている。第1のチップ20は、パッケージ12の底面18と平行に延在する水平支持面14に固定されている。第1のチップ20は、例えばASIC等のICチップである。第2のチップ30は、パッケージ12の底面18に対して傾斜した傾斜支持面16に固定されている。第2のチップ30は、例えば角速度センサや加速度センサ等の物理量センサチップである。   FIG. 1 is a partial cross-sectional view of the connected object 10. As shown in FIG. 1, in the connected object 10, the first chip 20 and the second chip 30 are fixed in the recess 13 formed in the package 12. The first chip 20 is fixed to a horizontal support surface 14 that extends parallel to the bottom surface 18 of the package 12. The first chip 20 is an IC chip such as an ASIC. The second chip 30 is fixed to the inclined support surface 16 that is inclined with respect to the bottom surface 18 of the package 12. The second chip 30 is a physical quantity sensor chip such as an angular velocity sensor or an acceleration sensor.

第1のチップ20の第1の端子部22と、パッケージ12内に設けられた電極部15とは、互いに平行に延在し、ワイヤ40を介して電気的に接続されている。例えば、パッケージ12は樹脂で形成され、パッケージ12の樹脂に埋め込まれたリードフレームによって電極部15が形成される。   The first terminal portion 22 of the first chip 20 and the electrode portion 15 provided in the package 12 extend in parallel to each other and are electrically connected via a wire 40. For example, the package 12 is made of resin, and the electrode portion 15 is formed by a lead frame embedded in the resin of the package 12.

第1のチップ20の第2の端子部24と第2のチップ30の端子部32とは、ワイヤ42を介して電気的に接続されている。第1のチップ20の第2の端子部24は水平支持面14に沿って延在し、第2のチップ30の端子部32は傾斜支持面16に沿って延在するので、第1のチップ20の第2の端子部24と第2のチップ30の端子部32とは異なる角度で延在している。   The second terminal portion 24 of the first chip 20 and the terminal portion 32 of the second chip 30 are electrically connected via a wire 42. Since the second terminal portion 24 of the first chip 20 extends along the horizontal support surface 14, and the terminal portion 32 of the second chip 30 extends along the inclined support surface 16, the first chip The 20 second terminal portions 24 and the terminal portions 32 of the second chip 30 extend at different angles.

次に、異なる角度で延在する第1のチップ20の第2の端子部24と第2のチップ30の端子部32とをワイヤ42で接続するワイヤボンディング方法について説明する。   Next, a wire bonding method for connecting the second terminal portion 24 of the first chip 20 extending at different angles and the terminal portion 32 of the second chip 30 with a wire 42 will be described.

図1に模式的に示すように、被接続物10をワイヤボンディング装置のテーブル3に載置した状態で、第1のチップ20の第2の端子部24と第2のチップ30の端子部32とに、ワイヤ42を接続する。   As schematically shown in FIG. 1, the second terminal portion 24 of the first chip 20 and the terminal portion 32 of the second chip 30 with the connected object 10 placed on the table 3 of the wire bonding apparatus. And wire 42 is connected.

詳しくは、ワイヤボンディング装置のヘッド(図示せず)に保持されたキャピラリ2の先端を第1のチップ20の第2の端子部24に対向させた状態で、矢印8aで示すようにキャピラリ2をテーブル3に対して垂直方向に移動させて、キャピラリ2の先端を第1のチップ20の第2の端子部24に接近させる。キャピラリ2内にはワイヤ42となる金属ワイヤが挿通されており、キャピラリ2の先端からは金属ワイヤの端部が繰り出されている。この金属ワイヤの端部を第1のチップ20の第2の端子部24に押し当て、第1のチップ20の第2の端子部24に金属ワイヤの端部を超音波接合する。   Specifically, with the tip of the capillary 2 held by a head (not shown) of the wire bonding apparatus facing the second terminal portion 24 of the first chip 20, the capillary 2 is shown as indicated by an arrow 8a. The tip of the capillary 2 is moved close to the second terminal portion 24 of the first chip 20 by moving in a direction perpendicular to the table 3. A metal wire to be a wire 42 is inserted into the capillary 2, and the end of the metal wire is drawn from the tip of the capillary 2. The end portion of the metal wire is pressed against the second terminal portion 24 of the first chip 20, and the end portion of the metal wire is ultrasonically bonded to the second terminal portion 24 of the first chip 20.

次いで、第1のチップ20の第2の端子部24に金属ワイヤの端部が接続された状態のまま、キャピラリ2を、矢印6で示すように、破線で示す位置まで移動させ、第2のチップ30の端子部32に対向させる。そして、矢印8bで示すように、キャピラリ2をテーブル3に対して垂直方向に移動させて、キャピラリ2の先端を第2のチップ30の端子部32に接近させ、キャピラリ2から引き出された金属ワイヤの中間部分を、第2のチップ30の端子部32に押し当て、第2のチップ30の端子部32に金属ワイヤの中間部分を超音波接合する。   Next, with the end of the metal wire connected to the second terminal portion 24 of the first chip 20, the capillary 2 is moved to the position indicated by the broken line as indicated by the arrow 6, and the second It is made to oppose the terminal part 32 of the chip | tip 30. FIG. Then, as indicated by the arrow 8b, the capillary 2 is moved in the direction perpendicular to the table 3, the tip of the capillary 2 is brought close to the terminal portion 32 of the second chip 30, and the metal wire drawn from the capillary 2 is drawn. The intermediate portion is pressed against the terminal portion 32 of the second chip 30, and the intermediate portion of the metal wire is ultrasonically bonded to the terminal portion 32 of the second chip 30.

次いで、キャピラリ2を第2のチップ30の端子部32から退避させ、第1のチップ20の第2の端子部24と第2のチップ30の端子部32とを接続する部分42が残るように、金属ワイヤを切断する。   Next, the capillary 2 is retracted from the terminal portion 32 of the second chip 30 so that a portion 42 for connecting the second terminal portion 24 of the first chip 20 and the terminal portion 32 of the second chip 30 remains. Cut the metal wire.

第2のチップ30の端子部32にワイヤ42を接続するとき、キャピラリ2は、第2のチップ30の端子部32に対して傾いており、垂直ではない。   When connecting the wire 42 to the terminal portion 32 of the second chip 30, the capillary 2 is inclined with respect to the terminal portion 32 of the second chip 30 and is not vertical.

ワイヤボンディングは、キャピラリを接続箇所に対して垂直にした状態で行うのが、一般的である。しかし、キャピラリが接続箇所に対して垂直でなくても、すなわちキャピラリが接続箇所に対して傾いていても、傾きが所定範囲内であれば、キャピラリが接続箇所に対して垂直である場合と同程度の接合強度で、ワイヤを接続することが可能である。キャピラリが接続箇所に対して垂直である場合と同程度の接合強度でワイヤを接続することが可能なキャピラリの傾きの許容範囲は、ワイヤの寸法・材質、キャピラリの寸法・形状・材質、キャピラリに加える圧力・超音波振動の大きさや時間等の加工条件によって変わる。   Wire bonding is generally performed in a state where the capillary is perpendicular to the connection location. However, even if the capillary is not perpendicular to the connection location, that is, the capillary is tilted with respect to the connection location, as long as the inclination is within a predetermined range, the capillary is perpendicular to the connection location. It is possible to connect the wires with a certain degree of bonding strength. The allowable range of inclination of the capillary that can connect the wire with the same bonding strength as when the capillary is perpendicular to the connection point is the wire size / material, capillary size / shape / material, and capillary. It depends on processing conditions such as applied pressure, ultrasonic vibration magnitude and time.

図2を参照しながら、さらに説明する。図2は、接続部分の拡大断面図である。図2に示すように、キャピラリ2の中心にはワイヤホール2zが形成されている。金属ワイヤ44は、ワイヤホール2zを通ってキャピラリ2の先端2xから繰り出される。キャピラリ2の先端2xの周囲には、逃げ面2yが形成されている。逃げ面2yは、キャピラリ2の中心線2rの周りに回転対称に形成されている。   Further description will be given with reference to FIG. FIG. 2 is an enlarged cross-sectional view of the connection portion. As shown in FIG. 2, a wire hole 2 z is formed at the center of the capillary 2. The metal wire 44 is fed out from the tip 2x of the capillary 2 through the wire hole 2z. A flank 2 y is formed around the tip 2 x of the capillary 2. The flank 2y is formed rotationally symmetrical around the center line 2r of the capillary 2.

キャピラリ2は、矢印6xで示すように、テーブル3に対して垂直方向に移動する。すなわち、キャピラリ2は、キャピラリ2の中心線2rと同じ方向に移動し、キャピラリ2の中心線2rはテーブル3に対して垂直である。   The capillary 2 moves in a direction perpendicular to the table 3 as indicated by an arrow 6x. That is, the capillary 2 moves in the same direction as the center line 2 r of the capillary 2, and the center line 2 r of the capillary 2 is perpendicular to the table 3.

ここで、キャピラリ2の逃げ面2yの傾き角度をBとする。この傾き角度Bは、キャピラリ2の中心線2rに垂直な平面(すなわち、テーブル3と平行な平面)に対する逃げ面2yの傾き角度である。また、テーブル3に対する接続箇所5の傾き角度をAとする。この傾き角度Aは、接続箇所5に金属ワイヤ44を接続するときの接続箇所5に対するキャピラリ2の傾きの角度、すなわち接続箇所5の法線方向とキャピラリ2の中心線2rとがなす角度に等しい。   Here, the inclination angle of the flank 2y of the capillary 2 is B. The inclination angle B is an inclination angle of the flank 2y with respect to a plane perpendicular to the center line 2r of the capillary 2 (that is, a plane parallel to the table 3). In addition, an inclination angle of the connection portion 5 with respect to the table 3 is A. This inclination angle A is equal to the angle of inclination of the capillary 2 with respect to the connection location 5 when the metal wire 44 is connected to the connection location 5, that is, the angle formed between the normal direction of the connection location 5 and the center line 2 r of the capillary 2. .

図2に示すように、B<Aのとき、キャピラリ2の中心線2rよりも図において右側の部分において、キャピラリ2の中心線2rから離れるほど、逃げ面2yと接続箇所5との間の距離が小さくなる。この部分では、キャピラリ2の逃げ面2yの内周縁2s側(キャピラリ2の先端2xに近い側)と接続箇所5との間に空間9が形成され、キャピラリ2の逃げ面2yの外周縁2t側(キャピラリ2の先端2xから遠い側)が金属ワイヤ44に当接する。そのため、金属ワイヤ44を良好に接続することが困難になる。例えば、キャピラリ2から金属ワイヤ44への押圧荷重や超音波振動のパワーの伝達が不十分になったり、キャピラリ2の逃げ面2yで金属ワイヤ44が押し潰されて金属ワイヤ44が細くなったり切断したり、キャピラリ2からの押圧荷重や超音波振動の伝達位置がずれて金属ワイヤ44の接合位置がずれたり、キャピラリ2にダメージを与えたりするからである。   As shown in FIG. 2, when B <A, the distance between the flank 2y and the connection portion 5 is further away from the center line 2r of the capillary 2 in the portion on the right side of the center line 2r of the capillary 2 in the drawing. Becomes smaller. In this portion, a space 9 is formed between the inner peripheral edge 2s side (side closer to the tip 2x of the capillary 2) of the flank 2y of the capillary 2 and the connection portion 5, and the outer peripheral edge 2t side of the flank 2y of the capillary 2 is formed. (The side far from the tip 2x of the capillary 2) contacts the metal wire 44. Therefore, it becomes difficult to connect the metal wire 44 well. For example, the transmission of pressure load or ultrasonic vibration power from the capillary 2 to the metal wire 44 becomes insufficient, or the metal wire 44 is crushed by the flank 2y of the capillary 2 so that the metal wire 44 becomes thin or cut. This is because the transmission position of the pressure load or ultrasonic vibration from the capillary 2 is shifted, the bonding position of the metal wire 44 is shifted, or the capillary 2 is damaged.

一方、B≧Aのとき、逃げ面2yと接続箇所5との間の距離は、同じか、キャピラリ2の中心線2rから離れるほど大きくなるので、金属ワイヤ44を接続箇所5に良好に接続することができる。すなわち、キャピラリ2の逃げ面2yの傾き角度Bと、接続箇所5に金属ワイヤ44を接続するときの接続箇所5に対するキャピラリ2の傾き角度Aとについて、
A≦B・・・(3)
を満たすようにすると、金属ワイヤ44を接続箇所5に良好に接続することができる。
On the other hand, when B ≧ A, the distance between the flank 2y and the connection location 5 is the same or increases as the distance from the center line 2r of the capillary 2 increases, so that the metal wire 44 is well connected to the connection location 5. be able to. That is, with respect to the inclination angle B of the flank 2y of the capillary 2 and the inclination angle A of the capillary 2 with respect to the connection location 5 when the metal wire 44 is connected to the connection location 5,
A ≦ B (3)
If it satisfy | fills, the metal wire 44 can be favorably connected to the connection location 5. FIG.

さらに説明すると、キャピラリ2の逃げ面2yの傾き角度Bを、キャピラリ2の中心線2rに対して垂直な平面に対して接続箇所が傾く角度A、すなわち接続箇所5に対するキャピラリ2の傾き角度Aと同等かそれ以上にすることで、キャピラリ2の逃げ面2yの内周縁2s側と接続箇所5との間に空間9がなくなり、結果として接合に必要なパワーが伝達可能となる。また、金属ワイヤ44の接合面積も増加し、接合品位が安定する。また、金属ワイヤ44のカット位置以外の部分で、すなわちキャピラリ2の逃げ面2yの外周縁2t側に対向する部分で、金属ワイヤ44が細くならないため、ワイヤ切れの心配がない。キャピラリ2の中心部分を介して金属ワイヤ44を接続箇所5に押圧することが可能となるため、キャピラリ2へのダメージを緩和できる。   More specifically, the inclination angle B of the flank 2y of the capillary 2 is defined as an angle A at which the connection portion is inclined with respect to a plane perpendicular to the center line 2r of the capillary 2, that is, an inclination angle A of the capillary 2 with respect to the connection portion 5. By making it equal or more, the space 9 is eliminated between the inner peripheral edge 2s side of the flank 2y of the capillary 2 and the connection portion 5, and as a result, the power necessary for joining can be transmitted. Further, the bonding area of the metal wire 44 is increased, and the bonding quality is stabilized. Further, since the metal wire 44 is not thin at a portion other than the cutting position of the metal wire 44, that is, at a portion facing the outer peripheral edge 2t side of the flank 2y of the capillary 2, there is no fear of wire breakage. Since the metal wire 44 can be pressed against the connection portion 5 through the center portion of the capillary 2, damage to the capillary 2 can be alleviated.

図3は、プル強度試験の結果を示すグラフである。縦軸は、接続箇所に接続したワイヤを接続箇所に対して垂直方向に引張り、ワイヤが接続箇所から剥離するときの引張荷重(プル強度)を測定した結果を示す。横軸は、キャピラリの中心線に対して垂直な平面に対して接続箇所が傾く角度A、すなわち接続箇所に対するキャピラリの傾き角度Aを示す。傾き角度Aは、0°、10°、20°とした。逃げ面の傾き角度Bが10°のキャピラリを用い、Auワイヤを試料の接続箇所に接続し、プル強度を測定した。◆、□、▲、*の記号は、ワイヤの接合条件が異なる。すなわち、ワイヤを接続箇所に押圧する静止荷重(gf)と、ワイヤに加える超音波の振動回数(bit)との組み合わせ(接合条件)が異なる。各3個の試料についてプル強度を測定した結果を、接合条件ごとに横軸方向に若干ずらしてプロットしている。符号Pを付した破線は、キャピラリを接続箇所に対して垂直にした状態でワイヤを接続した他の製品サンプルについてプル強度を測定した平均値を示す。符号Qを付した破線は、キャピラリを接続箇所に対して垂直にした状態でワイヤを接続した他の製品サンプルについてのプル強度の判定基準(下限値)である。   FIG. 3 is a graph showing the results of the pull strength test. A vertical axis | shaft shows the result of having measured the tensile load (pull strength) when the wire connected to the connection location is pulled in the direction perpendicular to the connection location and the wire peels from the connection location. The horizontal axis represents an angle A at which the connection portion is inclined with respect to a plane perpendicular to the center line of the capillary, that is, an inclination angle A of the capillary with respect to the connection portion. The inclination angle A was 0 °, 10 °, and 20 °. Using a capillary with a flank inclination angle B of 10 °, an Au wire was connected to the connection point of the sample, and the pull strength was measured. The symbols ◆, □, ▲, and * differ in wire joining conditions. That is, the combination (joining conditions) of the static load (gf) that presses the wire against the connection location and the number of vibrations (bit) of ultrasonic waves applied to the wire are different. The results of measuring the pull strength for each of the three samples are plotted with a slight shift in the horizontal axis direction for each joining condition. A broken line with a symbol P indicates an average value obtained by measuring the pull strength of another product sample in which the wire is connected in a state where the capillary is perpendicular to the connection portion. A broken line with a symbol Q is a criterion (lower limit value) for pull strength for other product samples in which the wire is connected in a state where the capillary is perpendicular to the connection location.

図3から、傾き角度Aが10°以下では、プル強度が他の製品サンプルと同程度であるので、十分な接合強度でワイヤを接続できることが分かる。キャピラリの逃げ面の傾き角度Bが10°であることから、前述の式(3)を満たすとワイヤを良好に接続できることが分かる。   From FIG. 3, it can be seen that when the inclination angle A is 10 ° or less, the pull strength is comparable to that of other product samples, so that the wire can be connected with sufficient bonding strength. Since the inclination angle B of the flank face of the capillary is 10 °, it can be understood that the wire can be satisfactorily connected when the above-described equation (3) is satisfied.

以上のように、式(3)を満たせば、被接続物10をワイヤボンディング装置のテーブル3に載置した状態のまま、第1のチップ20の第2の端子部24と第2のチップ30の端子部32との両方に、ワイヤ42を良好に接続することができる。第1のチップ20の第2の端子部24にワイヤを接続した後、第2のチップ30の端子部32にワイヤを接続するために、キャピラリを接続箇所に垂直にする必要はない。したがって、簡易に、かつ効率よくワイヤボンディングを行うことができる。   As described above, if the expression (3) is satisfied, the second terminal portion 24 and the second chip 30 of the first chip 20 remain in a state where the connected object 10 is placed on the table 3 of the wire bonding apparatus. The wire 42 can be satisfactorily connected to both the terminal portion 32 and the terminal portion 32. After connecting the wire to the second terminal portion 24 of the first chip 20 and connecting the wire to the terminal portion 32 of the second chip 30, the capillary need not be perpendicular to the connection location. Therefore, wire bonding can be performed easily and efficiently.

<実施例2> 実施例2のワイヤボンディング方法について、図4〜図7を参照しながら説明する。実施例2は、実施例1と略同様である。以下では、実施例1と同じ構成部分には同じ符号を用い、実施例1との相違点を中心に説明する。   <Example 2> The wire bonding method of Example 2 will be described with reference to FIGS. Example 2 is substantially the same as Example 1. In the following, the same reference numerals are used for the same components as in the first embodiment, and differences from the first embodiment will be mainly described.

実施例2では、異なる角度で延在する第1のチップ20の第2の端子部24と第2のチップ30の端子部32とをワイヤ42で接続するワイヤボンディング方法が、実施例1とは異なる。   In the second embodiment, a wire bonding method in which the second terminal portion 24 of the first chip 20 extending at different angles and the terminal portion 32 of the second chip 30 are connected by the wire 42 is different from the first embodiment. Different.

実施例2では、斜めに配置される第2のチップ30の端子部32に、予めバンプを形成する。なお、水平に配置される第1のチップ20の第2の端子部24にバンプを形成しても構わない。   In the second embodiment, bumps are formed in advance on the terminal portions 32 of the second chip 30 arranged obliquely. Note that bumps may be formed on the second terminal portions 24 of the first chip 20 arranged horizontally.

例えば、第2のチップ30をパッケージ12に固定する前に、図4の説明図に示すように、高さH1のバンプ34を端子部32に形成する。バンプ34の高さH1は、図4に示すように、バンプ34の主要部34aについて定義する。キャピラリでバンプを形成するときに、キャピラリのワイヤホール内に残っていた部分34bや、切断された金属ワイヤの端部34cなど、主要部34a以外が形成されても、それらによる高さは無視する。   For example, before fixing the second chip 30 to the package 12, bumps 34 having a height H1 are formed on the terminal portion 32 as shown in the explanatory view of FIG. The height H1 of the bump 34 is defined for the main portion 34a of the bump 34 as shown in FIG. When bumps are formed with capillaries, even if portions other than the main portion 34a such as the portion 34b remaining in the wire hole of the capillary and the end portion 34c of the cut metal wire are formed, the height due to them is ignored. .

あるいは、第2のチップ30をパッケージ12に固定した状態で、第2のチップ30の端子部32に、図5の説明図に示すように、高さH2のバンプ36を形成する。バンプ36は、端子部32に対して傾いた形状に形成される。この場合、バンプ36の高さH2は、図5に示すように、バンプ36の主要部36aについて、端子部32に垂直方向の高さで定義する。キャピラリでバンプを形成するときに、キャピラリのワイヤホール内に残っていた部分36bや、切断された金属ワイヤの端部36cなど、主要部36a以外が形成されても、それらによる高さは無視する。   Alternatively, with the second chip 30 fixed to the package 12, bumps 36 having a height H2 are formed on the terminal portion 32 of the second chip 30 as shown in the explanatory view of FIG. The bump 36 is formed in a shape inclined with respect to the terminal portion 32. In this case, the height H2 of the bump 36 is defined as the height in the direction perpendicular to the terminal portion 32 with respect to the main portion 36a of the bump 36, as shown in FIG. When bumps are formed with a capillary, even if a portion other than the main portion 36a is formed, such as a portion 36b remaining in the capillary wire hole or an end portion 36c of a cut metal wire, the height due to them is ignored. .

次いで、実施例1と同様に、第1のチップ20の第2の端子部24と第2のチップ30の端子部32とにワイヤ42を接続する。   Next, as in the first embodiment, the wire 42 is connected to the second terminal portion 24 of the first chip 20 and the terminal portion 32 of the second chip 30.

第2のチップ30の端子部32にワイヤ42を接続するとき、図6の接続部分の拡大断面図に示すように、ワイヤ42は、端子部32に予め形成されたバンプ35を介して、端子部32に接続する。   When the wire 42 is connected to the terminal portion 32 of the second chip 30, as shown in the enlarged cross-sectional view of the connecting portion in FIG. Connect to the unit 32.

実施例1で説明したように、A>Bのとき、キャピラリの逃げ面の外周縁側がワイヤを押し潰し、キャピラリの逃げ面の内周縁側には、接続箇所との間に空間ができる。そこで、接続箇所に予めバンプを形成しておき、バンプの上にワイヤを接続すると、図6に示したようにバンプ35がワイヤ42と接続箇所(端子部32)との間に挟まれ、ワイヤ42が押し潰されないようにすることができるので、ワイヤ42を良好に接続できる。   As described in the first embodiment, when A> B, the outer peripheral edge side of the flank face of the capillary crushes the wire, and a space is formed between the inner peripheral edge side of the flank face of the capillary and the connection portion. Therefore, when bumps are formed in advance at the connection locations and wires are connected on the bumps, the bumps 35 are sandwiched between the wires 42 and the connection locations (terminal portions 32) as shown in FIG. Since the wire 42 can be prevented from being crushed, the wire 42 can be connected well.

すなわち、接続箇所に予めバンプを形成しておくことにより、キャピラリの逃げ面と接続箇所との間の空間がなくなり、接合に必要な超音波振動のパワーが良好に伝達される。また、バンプによりワイヤの接合面積が増加するので、接合品位が安定する。また、バンプ35の緩衝効果により、ワイヤが細くなりにくく、キャピラリへのダメージも緩和できる。   That is, by previously forming bumps at the connection locations, there is no space between the flank face of the capillary and the connection locations, and the power of ultrasonic vibration necessary for joining is transmitted well. Further, since the bonding area of the wire is increased by the bump, the bonding quality is stabilized. In addition, due to the buffering effect of the bumps 35, the wire is not easily thinned, and damage to the capillaries can be reduced.

ワイヤを良好に接続するためには、予め形成するバンプの高さHを、図7の説明図に示す最低バンプ高さH以上にすればよい。 In order to connect the wires satisfactorily, the height H of the bump formed in advance may be set to the minimum bump height H 0 or more shown in the explanatory diagram of FIG.

図7は、最低バンプ高さの説明図である。図7において、直線S1,S2は、テーブルと平行であり、キャピラリ2の中心線2rに垂直である。直線S3は、逃げ面2yの外周縁2tを通り、接続箇所に平行である。直線S4は、逃げ面2yの内周縁2sを通り、接続箇所に平行である。   FIG. 7 is an explanatory diagram of the minimum bump height. In FIG. 7, straight lines S <b> 1 and S <b> 2 are parallel to the table and are perpendicular to the center line 2 r of the capillary 2. The straight line S3 passes through the outer peripheral edge 2t of the flank 2y and is parallel to the connection location. The straight line S4 passes through the inner peripheral edge 2s of the flank 2y and is parallel to the connection location.

直線S3で示すように、キャピラリ2の逃げ面2yの外周縁2tと接続箇所との間にワイヤが挟まれたときに、逃げ面2yの内周縁2sと接続箇所との間には、高さHの空間が形成される。鎖線で示すようなバンプ38を接続箇所に予め形成しておくと、この高さHの空間を埋めることができ、キャピラリ2から出たワイヤは、逃げ面2yの外周縁2t側で押し潰されないようにすることができる。これにより、バンプを介して接続箇所にワイヤを良好に接続することができる。 As indicated by a straight line S3, when a wire is sandwiched between the outer peripheral edge 2t of the flank 2y of the capillary 2 and the connection location, the height between the inner rim 2s of the flank 2y and the connection location is high. A space of H 0 is formed. If a bump 38 as shown by a chain line is formed in advance at the connection location, the space of this height H 0 can be filled, and the wire coming out of the capillary 2 is crushed on the outer peripheral edge 2t side of the flank 2y. Can be prevented. Thereby, a wire can be favorably connected to a connection location via a bump.

図7に示すように、逃げ面2yに沿う方向の逃げ面2yの幅をW、接続箇所の傾き角度(すなわち、接続箇所に対するキャピラリ2の傾き角度)をA、逃げ面2yの傾き角度(すなわち、キャピラリ2の中心線2rに垂直な平面と逃げ面2yとがなす角度)をBとすると、
=W×sin(A−B)・・・(4)
となる。
As shown in FIG. 7, the width of the flank 2y in the direction along the flank 2y is W, the inclination angle of the connection portion (ie, the inclination angle of the capillary 2 with respect to the connection portion) is A, and the inclination angle of the flank 2y (ie , B is an angle formed by a plane perpendicular to the center line 2r of the capillary 2 and the flank 2y)
H 0 = W × sin (AB) (4)
It becomes.

予め形成するバンプの高さHとすると、
H≧H・・・(5)
となればよい。
Assuming that the height H of the bump to be formed in advance is
H ≧ H 0 (5)
If it becomes.

したがって、式(4)及び(5)から、
H≧W×sin(A−B)・・・(6)
を満たすようにすれば、ワイヤを良好に接続することができる。
Therefore, from equations (4) and (5)
H ≧ W × sin (AB) (6)
If it is made to satisfy | fill, a wire can be connected favorably.

すなわち、式(6)を満たせば、被接続物10をワイヤボンディング装置のテーブル3に載置した状態のまま、第1のチップ20の第2の端子部24と第2のチップ30の端子部32との両方に、ワイヤ42を接続することができる。第1のチップ20の第2の端子部24にワイヤを接続した後、傾いている第2のチップ30の端子部32にワイヤを接続するために、傾いている第2のチップ30の端子部32に対してキャピラリを垂直にする必要はない。したがって、簡易に、かつ効率よくワイヤボンディングを行うことができる。   That is, if Expression (6) is satisfied, the second terminal portion 24 of the first chip 20 and the terminal portion of the second chip 30 remain in a state where the connected object 10 is placed on the table 3 of the wire bonding apparatus. The wire 42 can be connected to both of them. After connecting the wire to the second terminal portion 24 of the first chip 20, the terminal portion of the inclined second chip 30 is connected to connect the wire to the terminal portion 32 of the inclined second chip 30. The capillary need not be perpendicular to 32. Therefore, wire bonding can be performed easily and efficiently.

式(6)を変形すると、
A≦B+sin ―1(H/W)・・・(7)
となることから、式(7)を満たすようにすれば、ワイヤを良好に接続することができる。式(3)と式(7)とを比較すると分かるように、予めバンプを形成する実施例2では、実施例1よりも、接続箇所の傾き角度Aを大きくすることができる。
When formula (6) is transformed,
A ≦ B + sin −1 (H / W) (7)
Therefore, if the expression (7) is satisfied, the wires can be connected well. As can be seen from a comparison between the formula (3) and the formula (7), in the second embodiment in which the bumps are formed in advance, the inclination angle A of the connection portion can be made larger than that in the first embodiment.

なお、A≦Bのときに、バンプを形成しても構わない。この場合、式(6)及び(7)を満たす。   Note that bumps may be formed when A ≦ B. In this case, the expressions (6) and (7) are satisfied.

図8は、キャピラリ2の要部拡大断面図である。図8に示すように、キャピラリ2の中心線2rに垂直な平面に対する逃げ面2yの傾き角度をB、キャピラリ2の中心線2rに垂直な方向の逃げ面2yの外径寸法をT、キャピラリ2の中心線2rに垂直な方向の逃げ面2yの内径寸法をC、キャピラリ2の中心線2rに垂直な方向の逃げ面2yの幅をD、逃げ面2yに沿う方向の逃げ面2yの幅をWとすると、
D=(T−C)/2・・・(8)
W=D/cos(B)・・・(9)
である。
FIG. 8 is an enlarged cross-sectional view of the main part of the capillary 2. As shown in FIG. 8, the inclination angle of the flank 2y with respect to the plane perpendicular to the center line 2r of the capillary 2 is B, the outer diameter dimension of the flank 2y in the direction perpendicular to the center line 2r of the capillary 2 is T, and the capillary 2 The inner diameter dimension of the flank 2y in the direction perpendicular to the center line 2r is C, the width of the flank 2y in the direction perpendicular to the center line 2r of the capillary 2 is D, and the width of the flank 2y in the direction along the flank 2y is If W,
D = (TC) / 2 (8)
W = D / cos (B) (9)
It is.

次の表1は、接続箇所の傾き角度Aと、キャピラリの逃げ面の傾き角度Bと、キャピラリの逃げ面の内径寸法C及び外形寸法Tとから、式(4)、(8)、(9)を用いて最低バンプ高さHを計算した例である。

Figure 2014049523
The following Table 1 shows equations (4), (8), and (9) from the inclination angle A of the connection location, the inclination angle B of the flank face of the capillary, and the inner diameter dimension C and the outer dimension T of the capillary flank face. ) is an example of calculating the minimum bump height H 0 using.
Figure 2014049523

バンプの高さH以外の寸法・形状は、キャピラリの逃げ面の寸法・形状や、接続箇所の傾き等に応じて、適宜に選択すればよい。   Dimensions / shapes other than the height H of the bumps may be appropriately selected according to the dimension / shape of the flank face of the capillary, the inclination of the connection location, and the like.

<まとめ> 以上に説明したように、キャピラリの逃げ面の傾き角度Bと接続箇所に対するキャピラリの傾き角度Aが所定の条件式を満たすようにすることによって、異なる角度で延在する第1及び第2の接続箇所について、簡易に、かつ効率よくワイヤボンディングを行うことができる。   <Summary> As described above, the first and second extending at different angles by satisfying a predetermined conditional expression so that the inclination angle B of the flank face of the capillary and the inclination angle A of the capillary with respect to the connection portion satisfy the predetermined conditional expression. Wire bonding can be performed easily and efficiently at the two connection locations.

なお、本発明は、上記実施の形態に限定されるものではなく、種々変更を加えて実施することが可能である。   The present invention is not limited to the above embodiment, and can be implemented with various modifications.

例えば、ワイヤボンディングする第1及び第2の接続箇所は、いずれか一方又は両方が基板等に形成されてもよい。また、ワイヤボンディングする第1及び第2の接続箇所のいずれか一方又は両方が、パッケージや基板に設けられた電極部等であってもよい。ワイヤやバンプの材料は、適宜に選択すればよい。   For example, one or both of the first and second connection locations for wire bonding may be formed on a substrate or the like. In addition, one or both of the first and second connection portions to be wire bonded may be an electrode portion or the like provided on a package or a substrate. What is necessary is just to select the material of a wire or bump suitably.

また、本発明は、2箇所をワイヤで接続する場合に限らず、連続するワイヤで3箇所以上を接続する場合にも適用することができる。   Moreover, this invention is applicable not only when connecting two places with a wire but when connecting three or more places with a continuous wire.

2 キャピラリ
2r 中心線
2s 内周縁
2t 外周縁
2x 先端
2y 逃げ面
2z ワイヤホール
3 テーブル
5 接続箇所
9 空間
10 被接続物
12 パッケージ
13 凹部
14 水平支持面
15 電極部
16 傾斜支持面
18 底面
20 第1のチップ
22 第1の端子部
24 第2の端子部(第1の接続箇所)
30 第2のチップ
32 端子部(第2の接続箇所)
34,35,36,38 バンプ
40,42 ワイヤ
44 金属ワイヤ
A,B 傾き角度
H,H1,H2 高さ
最低バンプ高さ
2 Capillary 2r Center line 2s Inner edge 2t Outer edge 2x Tip 2y Flank 2z Wire hole 3 Table 5 Connection place 9 Space 10 Connected object 12 Package 13 Recess 14 Horizontal support surface 15 Electrode 16 Inclined support surface 18 Bottom surface 20 First Chip 22 First terminal portion 24 Second terminal portion (first connection location)
30 Second chip 32 Terminal portion (second connection location)
34, 35, 36, 38 Bump 40, 42 Wire 44 Metal wire A, B Inclination angle H, H1, H2 Height H 0 Minimum bump height

Claims (2)

被接続物の第1の接続箇所にキャピラリの先端を接近させ、前記キャピラリの前記先端から出ているワイヤを前記第1の接続箇所に接続する第1の工程と、
前記ワイヤが前記第1の接続箇所に接続された状態で、前記被接続物の第2の接続箇所に前記キャピラリの前記先端を接近させ、前記キャピラリの前記先端から出ている前記ワイヤを前記第2の接続箇所に接続する第2の工程と、
を含むワイヤボンディング方法において、
前記第1及び第2の接続箇所は、異なる角度で延在し、
前記キャピラリは、前記先端の周囲に逃げ面を有し、
前記第1及び第2の工程において、
前記接続箇所に前記ワイヤを接続するときの前記接続箇所に対する前記キャピラリの傾き角度をA、
前記キャピラリの前記逃げ面の傾き角度をB、
とすると、
A≦B
を満たすようにすることを特徴とする、ワイヤボンディング方法。
A first step of bringing a tip of a capillary close to a first connection location of an object to be connected, and connecting a wire coming out of the tip of the capillary to the first connection location;
With the wire connected to the first connection location, the tip of the capillary approaches the second connection location of the object to be connected, and the wire coming out of the tip of the capillary is connected to the first connection location. A second step of connecting to the two connection points;
In a wire bonding method including:
The first and second connection points extend at different angles;
The capillary has a flank around the tip;
In the first and second steps,
A tilt angle of the capillary with respect to the connection location when the wire is connected to the connection location is A,
The inclination angle of the flank of the capillary is B,
Then,
A ≦ B
The wire bonding method characterized by satisfy | filling.
被接続物の第1の接続箇所にキャピラリの先端を接近させ、前記キャピラリの前記先端から出ているワイヤを前記第1の接続箇所に接続する第1の工程と、
前記ワイヤが前記第1の接続箇所に接続された状態で、前記被接続物の第2の接続箇所に前記キャピラリの前記先端を接近させ、前記キャピラリの前記先端から出ている前記ワイヤを前記第2の接続箇所に接続する第2の工程と、
を含むワイヤボンディング方法において、
前記第1及び第2の接続箇所は、異なる角度で延在し、
前記第1及び第2の接続箇所の少なくとも一方に、予めバンプを形成しておき、
前記第1及び第2の工程の少なくとも一方において、前記バンプを介して前記ワイヤを、前記第1及び第2の接続箇所の少なくとも一方に接続し、
前記バンプが予め形成された前記接続箇所に対する前記バンプの高さをH、
前記逃げ面に沿う方向の前記逃げ面の幅をW、
前記バンプが予め形成された前記接続箇所に前記ワイヤを接続するときに当該接続箇所に対する前記キャピラリの傾き角度をA、
前記キャピラリの前記逃げ面の傾き角度をB、
とすると、
H≧W×sin(A−B)
を満たすようにすることを特徴とする、ワイヤボンディング方法。
A first step of bringing a tip of a capillary close to a first connection location of an object to be connected, and connecting a wire coming out of the tip of the capillary to the first connection location;
With the wire connected to the first connection location, the tip of the capillary approaches the second connection location of the object to be connected, and the wire coming out of the tip of the capillary is connected to the first connection location. A second step of connecting to the two connection points;
In a wire bonding method including:
The first and second connection points extend at different angles;
A bump is previously formed on at least one of the first and second connection locations,
In at least one of the first and second steps, the wire is connected to at least one of the first and second connection locations via the bump,
The height of the bump with respect to the connection location where the bump is previously formed is H,
The width of the flank in the direction along the flank is W,
When connecting the wire to the connection place where the bump is formed in advance, the inclination angle of the capillary with respect to the connection place is A,
The inclination angle of the flank of the capillary is B,
Then,
H ≧ W × sin (AB)
The wire bonding method characterized by satisfy | filling.
JP2012189559A 2012-08-30 2012-08-30 Wire bonding method Pending JP2014049523A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020066821A1 (en) * 2018-09-26 2020-04-02 ローム株式会社 Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020066821A1 (en) * 2018-09-26 2020-04-02 ローム株式会社 Semiconductor laser device

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