JP2014041955A - Led device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wire bonding type LED device which has excellent gas barrier properties and heat resistance and achieves high light extraction efficiency, and to provide a manufacturing method of the LED device.SOLUTION: The LED device includes: a substrate where multiple lead frames are disposed; an LED chip which is disposed on the substrate and emits light having a specific wavelength; wires which electrically connect the lead frames with an upper surface of the LED chip; a translucent layer which covers the lead frames and includes polysiloxane; and a wavelength conversion layer which is disposed on the translucent layer and contains a transparent resin and a phosphor. In the LED device, the translucent layer does not contact with a contact end part of each wire, which contacts with the lead frame, and/or a contact end part of each wire which contacts with the LED chip.

Description

  The present invention relates to an LED device and a manufacturing method thereof.

  In recent years, phosphors such as YAG phosphors are arranged in the vicinity of a gallium nitride (GaN) blue LED (Light Emitting Diode) chip to receive blue light and blue light emitted from the blue LED chip. An LED device that obtains white light by mixing yellow light emitted from a phosphor has been developed. In addition, various phosphors are arranged in the vicinity of the blue LED chip, and the blue light emitted from the blue LED chip and the red light and green light emitted from the phosphor upon receiving blue light are mixed to obtain white light. Has also been developed.

  White LED devices are widely applied to various lighting devices, and in order to reduce the cost and extend the life of lighting devices, it is required to improve the light extraction efficiency from the white LED device and extend the life. .

  In a general white LED device, an LED chip and its mounting portion (for example, a metal reflector that reflects light toward the light extraction surface) are sealed with a transparent resin layer (wavelength conversion layer) in which phosphors are dispersed. (For example, refer to Patent Document 1). However, the refractive index difference between the LED chip and the sealing resin is large, and when the emitted light from the LED chip enters the transparent resin layer, it is reflected at the interface between these layers. Therefore, there has been a problem that light extraction efficiency (external quantum efficiency) from the LED device is low.

  In order to improve the light extraction efficiency, it has been proposed to provide a concavo-convex structure on the light extraction surface side of the transparent resin layer (Patent Document 2). In this technique, light is scattered, dispersed, and diffracted on the surface of the transparent resin layer to improve light extraction efficiency. However, even with this technique, light is reflected at the interface between the LED chip and the transparent resin layer, so that the light extraction efficiency is not sufficient.

  Moreover, in the technique of patent document 1 and patent document 2, LED chip, a metal reflecting plate, etc. are coat | covered with transparent resin. Transparent resin has high gas permeability. For this reason, the metal reflector is corroded by the sulfide gas in the atmosphere and the light extraction efficiency is lowered.

  Therefore, it has been proposed to coat the LED chip and the metal reflector with an inorganic material layer made of sol-gel glass (Patent Document 3). According to this technique, since the metal reflector or the like is covered with an inorganic material layer having low gas permeability, corrosion of the metal reflector is suppressed. Further, since the refractive index difference between the inorganic material layer and the LED chip is relatively small, reflection of light at the interface between the LED chip and the inorganic material layer is reduced.

JP 2002-314142 A JP 2011-166148 A JP 2007-324256 A

  Here, there is a wire bonding type as one of the modes in which the LED chip is mounted on the substrate of the LED device. For example, as shown in FIG. 6A, in the wire bonding type LED device, the LED chip 3 is connected to the lead frames (wiring portions) 2 and 2 ′ disposed on the substrate 1 by a metal wire 4. To do. In the wire bonding type LED device, when the temperature of the LED device rises due to heat generated by the LED chip 3 or heat from the outside, the substrate thermally expands. At this time, the connecting end portion of the metal wire 4 fixed to the substrate 1 also follows the thermally expanding substrate 1.

  When the inorganic material layer described in Patent Document 3 is formed on such a wire bonding type LED device, the inorganic material layer does not follow the thermal expansion of the substrate. Therefore, the inorganic material layer is stressed by the metal wire trying to deform following the substrate, and cracks are likely to occur in the inorganic material layer.

  The present invention has been made in view of the above-described problems. That is, an object of the present invention is to provide a wire bonding type LED device that is excellent in gas barrier properties and heat resistance and has high light extraction efficiency, and a method for manufacturing the same.

That is, the first of the present invention relates to the following LED device.
[1] A substrate on which a plurality of lead frames are disposed, an LED chip that is disposed on the substrate and emits light of a specific wavelength, and a wire that electrically connects the lead frame and the upper surface of the LED chip. In the LED device that covers the lead frame and includes a light-transmitting layer that includes polysiloxane, and a wavelength conversion layer that covers the LED chip and includes a transparent resin and phosphor particles, the light-transmitting layer includes: An LED device that does not contact a connection end of the wire with the lead frame and / or a connection end of the wire with the LED chip.

[2] The LED device according to [1], wherein the wavelength conversion layer contacts a connection end portion of the wire with the lead frame and / or a connection end portion of the wire with the LED chip.
[3] The LED device according to [1], further including a covering member that covers a connection end portion of the wire with the lead frame and / or a connection end portion of the wire with the LED chip.
[4] The LED device according to any one of [1] to [3], wherein the light-transmitting layer includes metal oxide fine particles.

2nd of this invention is related with the manufacturing method of the following LED apparatuses.
[5] The method for manufacturing an LED device according to [1], wherein an LED chip is arranged on a substrate on which a plurality of lead frames are arranged, and the lead frame and the upper surface of the LED chip are wired. Electrically connecting to the lead frame, and / or disposing a mask at the connection end of the wire to the LED chip, a polysiloxane precursor, and A step of applying a composition for a light transmissive layer containing a solvent on the lead frame and curing to form a light transmissive layer, a step of removing the mask, and a wavelength conversion layer containing a transparent resin and phosphor particles And a step of applying a composition for coating so as to cover the LED chip and curing to form a wavelength conversion layer.

[6] The method for manufacturing an LED device according to [1], wherein an LED chip is arranged on a substrate on which a plurality of lead frames are arranged, and the lead frame and the upper surface of the LED chip are wired. And a coating member composition containing a resin is applied on the connection end of the wire with the lead frame and / or the connection end of the wire with the LED chip, A step of forming a covering member by curing, a step of applying a composition for a light-transmitting layer containing a polysiloxane precursor and a solvent on the lead frame and curing the composition, a transparent resin, and a transparent resin; A method for manufacturing an LED device, comprising: applying a wavelength conversion layer composition containing phosphor particles so as to cover the LED chip, and curing the composition to form a wavelength conversion layer.

[7] The method for manufacturing an LED device according to [1], wherein an LED chip is disposed on a substrate on which a plurality of lead frames are disposed, and the lead frame and the upper surface of the LED chip are wired. A step of forming a partition in the gap between the lead frames, and a composition for a light-transmitting layer containing a polysiloxane precursor and a solvent in one region separated by the partition. The step of applying and curing to form a light-transmitting layer, and the composition for wavelength conversion layer containing transparent resin and phosphor particles are applied so as to cover the LED chip and cured to form the wavelength conversion layer A method for manufacturing an LED device.

[8] The method for manufacturing an LED device according to [1], wherein an LED chip is arranged on a substrate on which a plurality of lead frames are arranged, and the lead frame and the upper surface of the LED chip are wired. Electrically connecting to the lead frame and / or the connection end of the wire with the LED chip and drying, Applying a composition for a light transmissive layer containing a siloxane precursor and a solvent on the lead frame and curing to form a light transmissive layer, and a composition for a wavelength conversion layer containing a transparent resin and phosphor particles, And a step of forming a wavelength conversion layer by applying and curing the LED chip so as to cover the LED chip.
[9] The method for manufacturing an LED device according to [8], wherein the liquid repellent compound is a fluorine-based compound.

[10] The method for manufacturing an LED device according to [1], wherein an LED chip is arranged on a substrate on which a plurality of lead frames are arranged, and the lead frame and the upper surface of the LED chip are wired. A step of electrically connecting to the lead frame, and a composition for a light-transmitting layer containing a polysiloxane precursor and a solvent is applied to the lead frame while avoiding the upper surface of the LED chip, and is cured to be higher than the height of the LED chip. A step of forming a light-transmitting layer having a small thickness, a step of applying a composition for wavelength conversion layer containing transparent resin and phosphor particles so as to cover the LED chip, and curing the composition to form a wavelength conversion layer; A method for manufacturing an LED device.

  In the LED device of the present invention, it is difficult for a light-transmitting layer to crack from the connection end portion of the wire with the lead frame or the vicinity of the connection end portion of the wire with the LED chip. Therefore, an LED device having a high gas barrier property over a long period of time and a high light extraction efficiency can be obtained.

It is a schematic sectional drawing which shows an example of the LED apparatus of this invention. It is a schematic sectional drawing which shows the other example of the LED apparatus of this invention. It is a schematic sectional drawing which shows the other example of the LED apparatus of this invention. It is a schematic sectional drawing which shows the other example of the LED apparatus of this invention. It is a schematic sectional drawing which shows the other example of the LED apparatus of this invention. FIG. 6A is a top view of a conventional LED device, and FIG. 6B is a schematic cross-sectional view of the LED device.

  Hereinafter, the present invention will be described in detail. However, the present invention is not limited to the following embodiments, and various modifications can be made without departing from the scope of the invention.

1. LED Device An example of the structure of the LED device of the present invention is shown in the schematic cross-sectional views of FIGS. The LED device of the present invention electrically connects a substrate 1 on which a plurality of lead frames 2 and 2 ′ are disposed, an LED chip 3 mounted on the substrate 1, and the LED chip 3 and the lead frames 2 and 2 ′. A light transmission layer 5 that covers the lead frames 2 and 2 ′, and a wavelength conversion layer 6 that covers the LED chip 3. For example, as shown in FIG. 2, the LED device of the present invention is for covering the connection end 10 of the wire 4 with the lead frames 2 and 2 ′ and the connection end 11 of the wire 4 with the LED chip 3. It may further include a covering member; as shown in FIG. 3, it may further include a partition wall 8 formed in a gap between the plurality of lead frames 2 and 2 ′.

  In the conventional wire bonding type LED device, as shown in FIG. 6B, for example, light is transmitted through the connection end 10 of the wire 4 to the lead frame 2 and the connection end 11 of the wire to the LED chip. Layer 5 is in contact. In such an LED device, when the substrate 1 or the LED chip 3 is thermally expanded, the wire 4 also tries to follow this. On the other hand, the translucent layer 5 does not follow the thermal expansion of the substrate 1 or the LED chip 3. Therefore, stress is applied to the light-transmitting layer 5 by the wires 4 that try to follow the thermal expansion of the substrate 1 and the LED chip 3, and cracks are likely to occur in the light-transmitting layer 5 in the vicinity of the connection end portions 10 and 11 of the wires 4. .

  On the other hand, in the LED device of the present invention, as shown in FIGS. 1 to 4, the translucent layer 5 does not contact the connection end portion 10 of the wire 4 with the lead frames 2 and 2 ′; As shown, the translucent layer 5 has a portion that does not contact the connection end 11 of the wire 4 with the LED chip 3. Therefore, even if the temperature of the LED device rises and the substrate 1 and the LED chip 3 are thermally expanded, the light-transmitting layer 5 is not easily affected, and the light-transmitting layer 5 is hardly cracked. From the viewpoint of suppressing cracks, it is preferable that the translucent layer 5 does not contact the connection end portions 10 and 11 of all the wires 4.

(1) Substrate The substrate 1 in the LED device of the present invention can be a member in which a plurality of lead frames 2 and 2 ′ made of, for example, metal are disposed on the surface of the insulating substrate 21. The plurality of lead frames 2 and 2 ′ are connected to an external power source (not shown) and supply current to the LED chip 3. The shape of the lead frames 2 and 2 ′ is appropriately selected according to the shape of the substrate 1 and the like, but the plurality of lead frames 2 and 2 ′ are formed with a gap so as not to conduct each other. Although the LED device shown in FIGS. 1 to 5 has two lead frames 2 and 2 ′, the LED device may have three or more lead frames.

  The lead frames 2 and 2 ′ preferably further have a function as a reflecting plate that reflects light from the LED chip 3 to the light extraction surface side of the LED device, and silver plating or the like is applied to the surface for improving reflection efficiency. It is preferable that

  The material of the insulating substrate 21 is not particularly limited as long as it has insulating properties and heat resistance. The insulating substrate 21 may be a substrate made of, for example, a heat resistant resin or ceramic. Examples of the thermal resin include liquid crystal polymer, polyphenylene sulfide, aromatic polyamide, epoxy resin, hard silicone resin, and the like.

  The shape of the insulating substrate 21 is not particularly limited, and may be a flat plate shape, or may have a cavity (concave portion) as shown in FIGS. The shape of the cavity is not particularly limited. For example, as shown in FIGS. 1 to 5, the shape may be a truncated cone shape, a truncated pyramid shape, a cylindrical shape, a prism shape, or the like.

  The substrate 1 is obtained by integrally molding the lead frames 2, 2 ′ and the insulating substrate 21 or by sticking the lead frames 2, 2 ′ to the insulating substrate 21.

(2) LED chip and wire The LED chip 3 is fixed on the substrate 1, and the cathode electrode and the anode electrode on the upper surface of the LED chip 3 are respectively connected to the lead frame 2, 2 ′ of the substrate 1 and the wire 4. Are electrically connected.

  The wavelength of the light emitted from the LED chip 3 is not particularly limited. The LED chip 3 may be, for example, an element that emits blue light (light of about 420 nm to 485 nm) or an element that emits ultraviolet light.

  The configuration of the LED chip 3 is not particularly limited. When the LED chip 3 is an element that emits blue light, the LED chip 3 includes an LED substrate such as sapphire, an n-GaN compound semiconductor layer (cladding layer), an InGaN compound semiconductor layer (light emitting layer), and the like. , A p-GaN compound semiconductor layer (cladding layer) and an electrode layer. The LED chip 3 may have a light emitting surface of 200 to 300 μm × 200 to 300 μm, for example. The height of the LED chip 3 is usually about 50 to 200 μm. In the LED device shown in FIGS. 1 to 5, only one LED chip 3 is disposed on the substrate 1, but a plurality of LED chips 3 may be disposed on the substrate 1.

  The wire 4 that connects the LED chip 3 and the lead frames 2 and 2 ′ is not particularly limited, and may be a known gold wire or the like.

(3) Translucent layer The translucent layer 5 is formed so as to cover the lead frames 2 and 2 ', and suppresses the corrosion of the lead frames 2 and 2' with hydrogen sulfide gas or the like. The translucent layer 5 only needs to cover a part of the lead frames 2 and 2 ′. As described above, the connection end portion 10 of the wire 4 with the lead frames 2 and 2 ′ and the wire 4 It is preferable that the connection end 11 with the LED chip 3 is not in contact.

  The translucent layer 5 contains polysiloxane. Polysiloxane is a compound in which a silane compound is bonded to a chain or cyclic siloxane. The light transmissive layer 5 may be made of only polysiloxane and may contain metal oxide fine particles and the like.

  The thickness of the light transmissive layer 5 is preferably 0.5 to 10 μm, more preferably 0.8 to 5 μm, and still more preferably 1 to 2 μm. When the thickness of the translucent layer 5 is less than 0.5 μm, the above-described corrosion inhibition effect may not be sufficient. On the other hand, if the thickness of the light-transmitting layer 5 exceeds 10 μm, the light-transmitting layer 5 is likely to crack, and in this case as well, there is a possibility that the corrosion inhibiting effect cannot be sufficiently obtained. The thickness of the translucent layer 5 means the maximum thickness of the translucent layer 5 formed on the lead frames 2 and 2 ′ of the LED chip 3. The thickness of the translucent layer 5 is measured with a laser holo gauge.

(4) Wavelength conversion layer The wavelength conversion layer 6 covers the light extraction surface of the LED chip 3. The wavelength conversion layer 6 may directly cover the light extraction surface of the LED chip 3, or may cover the light extraction surface of the LED chip 3 via the translucent layer 5.

  The wavelength conversion layer 6 receives light (excitation light) emitted from the LED chip 3 and emits fluorescence. By mixing the excitation light and the fluorescence, the color of the light from the LED device becomes a desired color. For example, when the light from the LED chip 3 is blue and the fluorescence emitted from the phosphor contained in the wavelength conversion layer 6 is yellow, the light from the LED device is white.

  The transparent resin contained in the wavelength conversion layer 6 is not particularly limited, and may be, for example, a silicone resin and an epoxy resin.

  The phosphor particles contained in the wavelength conversion layer 6 may be anything that is excited by light emitted from the LED chip 3 and emits fluorescence having a wavelength different from that of the light emitted from the LED chip 3. For example, examples of phosphor particles that emit yellow fluorescence include YAG (yttrium, aluminum, garnet) phosphors. The YAG phosphor receives blue light (wavelength 420 nm to 485 nm) emitted from the blue LED element, and emits yellow fluorescence (wavelength 550 nm to 650 nm).

  The phosphor particles are, for example, 1) A suitable amount of flux (fluoride such as ammonium fluoride) is mixed with a mixed raw material having a predetermined composition and pressed to form a molded body. 2) The obtained molded body is packed in a crucible and fired in air at a temperature range of 1350 to 1450 ° C. for 2 to 5 hours to obtain a sintered body.

  A mixed raw material having a predetermined composition is obtained by sufficiently mixing oxides such as Y, Gd, Ce, Sm, Al, La, and Ga, or compounds that easily become oxides at high temperatures in a stoichiometric ratio. . Moreover, the mixed raw material which has a predetermined composition mixes the solution which dissolved 1) the rare earth elements of Y, Gd, Ce, and Sm in the acid in stoichiometric ratio, and oxalic acid, and obtains a coprecipitation oxide. 2) It can also be obtained by mixing this coprecipitated oxide with aluminum oxide or gallium oxide.

  The type of the phosphor is not limited to the YAG phosphor, and may be another phosphor such as a non-garnet phosphor that does not contain Ce.

  The average particle diameter of the phosphor particles is preferably 1 μm to 50 μm, and more preferably 20 μm or less. The larger the particle size of the phosphor particles, the higher the light emission efficiency (wavelength conversion efficiency). On the other hand, when the particle diameter of the phosphor particles is too large, a gap generated at the interface between the phosphor particles and the transparent resin (epoxy resin or silicone resin) becomes large. Thereby, the intensity | strength of the wavelength conversion layer 6 falls or it becomes easy for gas to penetrate | invade into the LED chip 3 side from the exterior of an LED device. The average particle diameter of the phosphor particles can be measured, for example, by a Coulter counter method.

  Generally the quantity of the fluorescent substance particle contained in a wavelength conversion layer is 5-15 mass% with respect to the solid content total mass of a wavelength conversion layer. The thickness of the wavelength conversion layer is generally 25 μm to 5 mm.

(5) Covering member As described above, the LED device includes the covering member 7 that covers the connection end 10 of the wire 4 with the lead frame 2 or the connection end 11 of the wire 4 with the LED chip 3. Also good. When the LED device includes the covering member 7, the covering member 7 deforms following the deformation of the connection end portions 10 and 11 of the wire 4. Therefore, it is difficult for stress to be applied to the light-transmitting layer 5, and cracks are not easily generated in the light-transmitting layer 5.

  The material of the covering member 7 is not particularly limited as long as it can be deformed following the deformation of the connection end portions 10 and 11, and may be, for example, a silicone resin or an epoxy resin. The shape of the covering member 7 is not particularly limited as long as it can cover the connection end portions 10 and 11, but the thickness of the covering member is preferably 0.5 to 10 μm, more preferably 1 to 1. 2 μm. When the thickness of the covering member 7 is too thin, the stress generated by the deformation of the connection end portions 10 and 11 is not sufficiently relieved by the covering member 7, and a crack may occur in the translucent layer 5 around the covering member 7. .

(6) Partition Wall As described above, the LED device may have the partition wall 8 formed in the gap between the lead frames 2 and 2 ′. When the partition wall 8 is formed in the LED device, the light-transmitting layer 5 can be formed only in a desired region, as will be described in a later-described method for manufacturing an LED device.

  The material of the partition wall 8 is not particularly limited, and may be the same material as the insulating substrate 21 described above or the resin contained in the wavelength conversion layer 6, for example. The shape of the partition wall 8 is not particularly limited as long as it is a shape capable of blocking the composition for the light transmissive layer for forming the light transmissive layer 5, but the height of the partition wall 8 is 5 to 100 μm. It is preferable that it is 20 to 50 μm. If the height of the partition wall 8 is too low, the light-transmitting layer composition cannot be sufficiently dammed, and the light-transmitting layer 5 may not be formed only in a desired region.

2. Manufacturing Method of LED Device The manufacturing method of the LED device of the present invention has the following five types.

(1) 1st aspect In the manufacturing method of a 1st aspect, the following five processes (i)-(v) are performed.
i) A step of arranging an LED chip on a substrate on which a plurality of lead frames are arranged, and electrically connecting the lead frame and the upper surface of the LED chip via wires.
ii) A step of arranging a mask at the connection end of the wire with the lead frame and / or the connection end of the wire with the LED chip.
iii) A step of applying a light transmissive layer composition containing a polysiloxane precursor and a solvent onto the lead frame and curing the composition to form a light transmissive layer.
iv) Step of removing mask v) Step of applying wavelength curing layer composition containing transparent resin and phosphor particles so as to cover light extraction surface of LED chip and curing to form wavelength conversion layer

  In the manufacturing method of this aspect, a mask is disposed at the connection end of the wire 4 with the lead frames 2 and 2 ′ and / or the connection end of the wire 4 with the LED chip 5, and the light transmitting layer Apply the composition. Accordingly, the translucent layer 5 is not formed on the connection end portions 10 and 11 of the wire 4, and the LED device shown in FIG. 1; that is, the wavelength conversion layer 6 is connected to the lead frames 2 and 2 ′ of the wire 4. An LED device is obtained that contacts the connection end 10 and / or the connection end 11 of the wire 4 with the LED chip 3. In the LED device shown in FIG. 1, only one connection end 10 out of the connection ends 10 and 11 is in contact with the wavelength conversion layer 6.

i) LED chip mounting step The LED chip 3 is fixed to the substrate 1 on which the plurality of lead frames 2 and 2 ′ are arranged, and the upper surface of the LED chip 3 and the lead frames 2 and 2 ′ are connected via the wires 4. Connect electrically. The method for fixing the LED chip 3 to the substrate 1 is not particularly limited, and may be a method for fixing the LED chip 3 by die bonding, for example. The connection method between the LED chip 3 and the wire 4 and the connection method between the lead frames 2 and 2 ′ and the wire 4 are not particularly limited, and may be a known method such as ultrasonic bonding.

ii) Mask Placement Step A mask is placed on the connection end 10 of the wire 4 with the lead frames 2 and 2 ′ or the connection end 11 of the wire 4 with the LED chip 3. At this time, a mask may be disposed on all the connection end portions 10 and 11, or a mask may be disposed only on a part of the connection end portions 10 and 11.

  The type of the mask is not particularly limited as long as it can prevent the composition for the light transmissive layer from adhering to the connection end portions 10 and 11 in the iii) light transmissive layer forming step described later. For example, the resist mask etc. which are apply | coated directly on the board | substrate 1 may be sufficient, and the plate-shaped mask arrange | positioned between the coating device of the composition for translucent layers and the board | substrate 1 may be sufficient.

iii) Translucent Layer Formation Step With the mask disposed on the connection ends 10 and 11 of the wire 4, the translucent layer composition is applied and cured to obtain a translucent layer. The light transmitting layer composition does not adhere to the connection end portions 10 and 11 where the mask is disposed, and the light transmission layer 5 is not formed on the connection end portions 10 and 11.

iii-1) Translucent Layer Composition The translucent layer composition includes a polysiloxane precursor, metal oxide fine particles, an organic solvent, and the like. If necessary, a metal alkoxide or a metal chelate and various additives are included.

(Polysiloxane precursor)
The polysiloxane precursor contained in the composition for light transmissive layer may be an alkoxysilane compound, an aryloxysilane compound, or a polymer (oligomer) thereof. The alkoxysilane compound or aryloxysilane compound is represented, for example, by the following general formula (I).
Si (OR) _n Y _4-n (I)

  In general formula (I), n represents the number of alkoxy groups or aryloxy groups (OR), and is an integer of 2 or more and 4 or less. Moreover, R represents an alkyl group or a phenyl group each independently, Preferably it represents a C1-C5 alkyl group or a phenyl group.

  In the general formula (I), Y represents a hydrogen atom or a monovalent organic group. Specific examples of the monovalent organic group represented by Y include an aliphatic group having 1 to 1000 carbon atoms, preferably 500 or less, more preferably 100 or less, still more preferably 50 or less, and particularly preferably 6 or less. An alicyclic group, an aromatic group, and an alicyclic aromatic group are included. These monovalent organic groups may be an aliphatic group, an alicyclic group, an aromatic group, or a group in which an alicyclic aromatic group is bonded via a linking group. The linking group may be an atom such as O, N, or S, or an atomic group containing these. Moreover, the monovalent organic group represented by Y may have a substituent. Examples of the substituent include, for example, halogen atoms such as F, Cl, Br, and I; vinyl group, methacryloxy group, acryloxy group, styryl group, mercapto group, epoxy group, epoxycyclohexyl group, glycidoxy group, amino group, cyano group An organic functional group such as a group, a nitro group, a sulfonic acid group, a carboxy group, a hydroxy group, an acyl group, an alkoxy group, an imino group, and a phenyl group.

  In general formula (I), the group represented by Y is particularly preferably a methyl group. When Y is a methyl group, the light resistance and heat resistance of the translucent layer 5 obtained will become favorable.

The alkoxysilane or aryloxysilane represented by the general formula (I) includes the following tetrafunctional silane compounds, trifunctional silane compounds, and bifunctional silane compounds.
Examples of tetrafunctional silane compounds include tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetrabutoxysilane, tetrapentyloxysilane, tetraphenyloxysilane, trimethoxymonoethoxysilane, dimethoxydiethoxysilane, triethoxymono Methoxysilane, trimethoxymonopropoxysilane, monomethoxytributoxysilane, monomethoxytripentyloxysilane, monomethoxytriphenyloxysilane, dimethoxydipropoxysilane, tripropoxymonomethoxysilane, trimethoxymonobutoxysilane, dimethoxydibutoxysilane , Triethoxymonopropoxysilane, diethoxydipropoxysilane, tributoxymonopropoxysilane, dimethoxymonoethoxymonobutoxy Orchid, diethoxymonomethoxymonobutoxysilane, diethoxymonopropoxymonobutoxysilane, dipropoxymonomethoxymonoethoxysilane, dipropoxymonomethoxymonobutoxysilane, dipropoxymonoethoxymonobutoxysilane, dibutoxymonomethoxymonoethoxysilane, Examples include tetraalkoxysilanes such as dibutoxymonoethoxymonopropoxysilane and monomethoxymonoethoxymonopropoxymonobutoxysilane, and tetraaryloxysilane. Among these, tetramethoxysilane and tetraethoxysilane are preferable.

  Examples of trifunctional silane compounds include trimethoxysilane, triethoxysilane, tripropoxysilane, tripentyloxysilane, triphenyloxysilane, dimethoxymonoethoxysilane, diethoxymonomethoxysilane, dipropoxymonomethoxysilane, di Propoxymonoethoxysilane, dipentyloxylmonomethoxysilane, dipentyloxymonoethoxysilane, dipentyloxymonopropoxysilane, diphenyloxylmonomethoxysilane, diphenyloxymonoethoxysilane, diphenyloxymonopropoxysilane, methoxyethoxypropoxysilane, monopropoxydimethoxysilane , Monopropoxydiethoxysilane, monobutoxydimethoxysilane, monopentyloxydiethoxysilane, monopheny Monohydrosilane compounds such as oxydiethoxysilane; methyltrimethoxysilane, methyltriethoxysilane, methyltripropoxysilane, methyltripentyloxysilane, methylmonomethoxydiethoxysilane, methylmonomethoxydipropoxysilane, methylmonomethoxydipentyloxy Monomethylsilane compounds such as silane, methylmonomethoxydiphenyloxysilane, methylmethoxyethoxypropoxysilane, methylmonomethoxymonoethoxymonobutoxysilane; ethyltrimethoxysilane, ethyltripropoxysilane, ethyltripentyloxysilane, ethyltriphenyloxysilane , Ethyl monomethoxydiethoxysilane, ethyl monomethoxydipropoxysilane, ethyl monomethoxydipentyloxysilane Monoethylsilane compounds such as ethyl, monomethoxydiphenyloxysilane, ethylmonomethoxymonoethoxymonobutoxysilane; propyltrimethoxysilane, propyltriethoxysilane, propyltripentyloxysilane, propyltriphenyloxysilane, propylmonomethoxydi Monopropylsilane compounds such as ethoxysilane, propylmonomethoxydipropoxysilane, propylmonomethoxydipentyloxysilane, propylmonomethoxydiphenyloxysilane, propylmethoxyethoxypropoxysilane, propylmonomethoxymonoethoxymonobutoxysilane; butyltrimethoxysilane, Butyltriethoxysilane, Butyltripropoxysilane, Butyltripentyloxysilane, Butyltriphenyloxy Monobutylsilane compounds such as xysilane, butylmonomethoxydiethoxysilane, butylmonomethoxydipropoxysilane, butylmonomethoxydipentyloxysilane, butylmonomethoxydiphenyloxysilane, butylmethoxyethoxypropoxysilane, butylmonomethoxymonoethoxymonobutoxysilane Is included. Among these, methyltrimethoxysilane and methyltriethoxysilane are more preferable, and methyltrimethoxysilane is more preferable.

  Specific examples of the bifunctional silane compound include dimethoxysilane, diethoxysilane, dipropoxysilane, dipentyloxysilane, diphenyloxysilane, methoxyethoxysilane, methoxypropoxysilane, methoxypentyloxysilane, methoxyphenyloxysilane, ethoxypropoxy. Silane, ethoxypentyloxysilane, ethoxyphenyloxysilane, methyldimethoxysilane, methylmethoxyethoxysilane, methyldiethoxysilane, methylmethoxypropoxysilane, methylmethoxypentyloxysilane, methylmethoxyphenyloxysilane, ethyldipropoxysilane, ethylmethoxy Propoxysilane, ethyldipentyloxysilane, ethyldiphenyloxysilane, propyldimethoxysilane, propylene Methoxyethoxysilane, propylethoxypropoxysilane, propyldiethoxysilane, propyldipentyloxysilane, propyldiphenyloxysilane, butyldimethoxysilane, butylmethoxyethoxysilane, butyldiethoxysilane, butylethoxypropoxysilane, butyldipropoxysilane, butyl Methyldipentyloxysilane, butylmethyldiphenyloxysilane, dimethyldimethoxysilane, dimethylmethoxyethoxysilane, dimethyldiethoxysilane, dimethyldipentyloxysilane, dimethyldiphenyloxysilane, dimethylethoxypropoxysilane, dimethyldipropoxysilane, diethyldimethoxysilane, diethyl Methoxypropoxysilane, diethyldiethoxysilane, diethyl ether Xypropoxysilane, dipropyldimethoxysilane, dipropyldiethoxysilane, dipropyldipentyloxysilane, dipropyldiphenyloxysilane, dibutyldimethoxysilane, dibutyldiethoxysilane, dibutyldipropoxysilane, dibutylmethoxypentyloxysilane, dibutylmethoxyphenyl Oxysilane, methylethyldimethoxysilane, methylethyldiethoxysilane, methylethyldipropoxysilane, methylethyldipentyloxysilane, methylethyldiphenyloxysilane, methylpropyldimethoxysilane, methylpropyldiethoxysilane, methylbutyldimethoxysilane, methylbutyl Diethoxysilane, methylbutyldipropoxysilane, methylethylethoxypropoxysilane, ethyl Includes propyldimethoxysilane, ethylpropylmethoxyethoxysilane, dipropyldimethoxysilane, dipropylmethoxyethoxysilane, propylbutyldimethoxysilane, propylbutyldiethoxysilane, dibutylmethoxyethoxysilane, dibutylmethoxypropoxysilane, dibutylethoxypropoxysilane, etc. . Of these, dimethoxysilane, diethoxysilane, methyldimethoxysilane, and methyldiethoxysilane are preferable.

  A polymer (oligomer) of an alkoxysilane compound or an aryloxysilane compound is obtained by hydrolyzing the silane compound in the presence of an acid catalyst, water, and an organic solvent, and subjecting it to a condensation reaction. The mass average molecular weight of the polysiloxane precursor can be adjusted by reaction conditions (particularly reaction time) and the like.

The acid catalyst for preparing the polysiloxane precursor (oligomer) is particularly preferably an organic sulfonic acid represented by the following general formula (II).
R ⁸ —SO ₃ H (II)
In the above general formula (II), the hydrocarbon group represented by R ⁸ is a linear, branched, or cyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms. Examples of the cyclic hydrocarbon group include an aromatic hydrocarbon group such as a phenyl group, a naphthyl group, or an anthryl group, preferably a phenyl group. Further, the hydrocarbon group represented by R ⁸ in the general formula (II) may have a substituent. Examples of the substituent include linear, branched, or cyclic, saturated or unsaturated hydrocarbon groups having 1 to 20 carbon atoms; halogen atoms such as fluorine atoms; sulfonic acid groups; carboxyl groups; Amino group; cyano group and the like are included.

  The organic sulfonic acid represented by the general formula (II) is particularly preferably nonafluorobutanesulfonic acid, methanesulfonic acid, trifluoromethanesulfonic acid, or dodecylbenzenesulfonic acid.

  The amount of the acid catalyst added during the preparation of the polysiloxane precursor is preferably 1 to 1000 ppm by mass, more preferably 5 to 800 ppm by mass with respect to the total amount of the polysiloxane precursor preparation.

  The film quality of the finally obtained polysiloxane varies depending on the amount of water added during the preparation of the polysiloxane precursor (oligomer). Therefore, it is preferable to adjust the water addition rate during preparation of the polysiloxane precursor according to the target film quality. The water addition rate is the ratio (%) of the number of moles of water molecules to be added to the number of moles of alkoxy groups or aryloxy groups of the silane compound contained in the polysiloxane precursor preparation liquid. The water addition rate is preferably 50 to 200%, more preferably 75 to 180%. By setting the water addition rate to 50% or more, the film quality of the translucent layer is stabilized. Moreover, the storage stability of the composition for translucent layers becomes favorable by setting it as 200% or less.

  Examples of solvents added during the preparation of the polysiloxane precursor include monohydric alcohols such as methanol, ethanol, propanol and n-butanol; alkyls such as methyl-3-methoxypropionate and ethyl-3-ethoxypropionate. Carboxylic acid ester; Polyhydric alcohol such as ethylene glycol, diethylene glycol, propylene glycol, glycerin, trimethylolpropane, hexanetriol; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl Ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl Monoethers of polyhydric alcohols such as ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, or their monoacetates; methyl acetate, ethyl acetate, butyl acetate, etc. Esters; ketones such as acetone, methyl ethyl ketone, methyl isoamyl ketone; ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol dipropyl ether, ethylene glycol dibutyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether , Jiechire Polyhydric alcohols ethers all hydroxyl groups of polyhydric alcohols such as glycol methyl ethyl ether and alkyl etherified; and the like. These may be added alone or in combination of two or more.

  The polysiloxane precursor contained in the light transmissive layer composition is preferably an alkoxysilane or aryloxysilane oligomer from the viewpoint of the viscosity of the light transmissive layer composition. The mass average molecular weight of the oligomer is preferably 1000 to 3000, more preferably 1200 to 2700, and further preferably 1500 to 2000. When the mass average molecular weight of the polysiloxane precursor is less than 1000, the viscosity of the composition for the light transmissive layer becomes low, and the composition for the light transmissive layer may be repelled on the lead frames 2, 2 ′ or the LED chip 3. There is. On the other hand, when the mass average molecular weight exceeds 3000, the viscosity of the composition for light transmissive layer increases, and it may be difficult to apply the composition for light transmissive layer. The mass average molecular weight is a value (polystyrene conversion) measured by gel permeation chromatography.

  It is preferable that the quantity of the polysiloxane precursor contained in the composition for translucent layers is 1-40 mass% with respect to the composition total mass for translucent layers, More preferably, it is 2-30 mass%. When the amount of the polysiloxane precursor is less than 1% by mass, the viscosity of the light transmissive layer composition may be too low. On the other hand, when the amount of the polysiloxane precursor exceeds 40% by mass, the viscosity of the light transmissive layer composition becomes excessively high, and it may be difficult to apply the light transmissive layer composition.

(solvent)
The solvent contained in the composition for light transmissive layer should just be what can melt | dissolve or uniformly disperse | distribute the above-mentioned polysiloxane precursor. Examples of the solvent include monohydric alcohols such as methanol, ethanol, propanol and n-butanol; alkyl carboxylic acid esters such as methyl-3-methoxypropionate and ethyl-3-ethoxypropionate; ethylene glycol, diethylene glycol, Polyhydric alcohols such as propylene glycol, glycerin, trimethylolpropane, hexanetriol; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol mono Propyl ether, diethylene glycol monobutyl ether, propylene glycol mono Monoethers of polyhydric alcohols such as chill ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, or monoacets thereof; ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol dipropyl ether, Polyhydric alcohol ethers obtained by alkyl etherifying all hydroxyl groups of polyhydric alcohols such as ethylene glycol dibutyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether; methyl acetate, ethyl acetate, Such as butyl acetate Ethers; include the like; ketones such as acetone, methyl ethyl ketone and methyl isoamyl ketone. In the composition for translucent layers, only 1 type of solvent may be contained and 2 or more types may be contained.

  The solvent preferably contains water. The amount of water is preferably 3 to 15% by mass and more preferably 5 to 10% by mass with respect to the total mass of the light-transmitting layer composition. Moreover, it is preferable that the quantity of water is 10-120 mass parts with respect to 100 mass parts of polysiloxane precursors, and it is more preferable that it is 80-100 mass parts. If the amount of water contained in the light-transmitting layer composition is too small, the polysiloxane precursor may not be sufficiently hydrolyzed when the light-transmitting layer is formed. On the other hand, if the amount of water contained in the translucent composition is excessive, the polysiloxane precursor may be hydrolyzed during storage of the translucent layer composition, and the translucent layer composition may be gelled. is there.

  It is also preferable that the solvent includes an organic solvent having a boiling point of 150 ° C. or higher (for example, ethylene glycol, propylene glycol, etc.). When an organic solvent having a boiling point of 150 ° C. or higher is contained, the storage stability of the composition for light transmissive layer is increased. Moreover, it becomes difficult for the solvent to volatilize in the coating apparatus, and the composition for light transmissive layer can be stably applied. On the other hand, it is preferable that the boiling point of the solvent contained in the composition for translucent layers is 250 degrees C or less. When the boiling point of a solvent exceeds 250 degreeC, the drying property of the composition for translucent layers will fall.

(Metal oxide fine particles)
The light transmitting layer composition may contain metal oxide fine particles. When metal oxide fine particles are contained in the composition for light transmissive layer, the stress accompanying dehydration / condensation of the polysiloxane precursor is relieved, and cracks are hardly generated in the light transmissive layer 5 obtained. Moreover, when metal oxide microparticles | fine-particles are contained in the composition for translucent layers, an unevenness | corrugation will be formed in the surface of the translucent layer 5 obtained. Due to the unevenness, an anchor effect is generated at the interface between the light transmitting layer 5 and the wavelength conversion layer 6, and the adhesion between the light transmitting layer 5 and the wavelength conversion layer 6 is increased.

  The type of metal oxide fine particles is not particularly limited, but the metal oxide fine particles preferably have a refractive index higher than that of polysiloxane. When metal oxide fine particles having a high refractive index are contained, the refractive index of the obtained light-transmitting layer 5 is increased. In general, the refractive index of LED chips is considerably higher than that of polysiloxane. Therefore, when the refractive index of the light transmissive layer 5 is increased, the difference in refractive index between the LED chip 3 and the light transmissive layer 5 is reduced, and light reflection at the interface between the LED chip 3 and the light transmissive layer 5 is reduced. That is, the light extraction efficiency of the LED device is increased.

The metal oxide fine particles may be porous particles, and the specific surface area is preferably 200 m ² / g or more. When the metal oxide fine particles are porous, the solvent enters the porous voids, and the viscosity of the light transmissive layer composition is increased. However, the viscosity of the light-transmitting layer composition is not simply determined by the amount of the metal oxide fine particles, but also varies depending on the ratio of the metal oxide fine particles and the solvent, the amount of other components, and the like.

  The average primary particle size of the metal oxide fine particles is preferably 5 to 100 nm, more preferably 5 to 80 nm, and still more preferably 5 to 50 nm. When the average primary particle size of the metal oxide fine particles is 5 nm or more, the above-described crack suppressing effect and refractive index improving effect are easily obtained. The average primary particle size of the metal oxide fine particles is measured by a Coulter counter method.

  Examples of the metal oxide fine particles include zirconium oxide, titanium oxide, tin oxide, cerium oxide, niobium oxide, and zinc oxide. Among these, since the refractive index is high, the metal oxide fine particles are preferably zirconium oxide fine particles. In the composition for light transmissive layers, only one kind of metal oxide fine particles may be contained, or two or more kinds may be contained.

  The metal oxide fine particles may have a surface treated with a silane coupling agent or a titanium coupling agent. The surface-treated metal oxide fine particles are likely to be uniformly dispersed in the light-transmitting layer composition.

  The amount of the metal oxide fine particles in the light transmissive layer composition is preferably 10 to 60% by weight, more preferably 15 to 45% by weight, and more preferably 15% to 45% by weight, based on the total solid content of the light transmissive layer composition. Preferably it is 20-30 mass%. If the amount of the metal oxide fine particles is too small, the above-described crack suppressing effect is not enhanced, and the refractive index improving effect is not sufficient. On the other hand, when the amount of metal oxide fine particles is too large, the amount of polysiloxane is relatively reduced, and the gas barrier property of the light-transmitting layer and the strength of the light-transmitting layer may be reduced.

(Organic metal compound)
The composition for translucent layer may contain an organometallic compound of a metal having a valence of 2 or more (excluding Si). The organometallic compound may be a metal alkoxide or metal chelate of a divalent or higher valent metal element other than Si element. The metal alkoxide or metal chelate forms a metalloxane bond with a hydroxyl group present on the surface of the polysiloxane precursor, the LED chip, or the wavelength conversion layer when the light-transmitting layer is formed. The metalloxane bond is very strong. Therefore, when a metal alkoxide or a metal chelate is contained in the composition for a light-transmitting layer, adhesion between the light-transmitting layer and the LED chip, and the light-transmitting layer and the wavelength conversion layer is increased.

  On the other hand, a part of the metal alkoxide or metal chelate forms nano-sized clusters composed of metalloxane bonds in the light-transmitting layer. This cluster functions as a photocatalyst for converting hydrogen sulfide gas having high metal corrosivity into sulfur dioxide gas having low corrosivity. Therefore, when a metal alkoxide or a metal chelate is contained in the light transmitting layer composition, the resistance to sulfurization gas of the LED device is also increased.

The metal element contained in the metal alkoxide or metal chelate is preferably a group 4 or group 13 metal element other than the Si element, and a compound represented by the following general formula (III) is preferable.
M ^{m +} X _n Y _m−n (III)
In general formula (III), M represents a Group 4 or Group 13 metal element, and m represents the valence (3 or 4) of M. X represents a hydrolyzable group, and n represents the number of X groups (an integer of 2 or more and 4 or less). However, m ≧ n. Y represents a monovalent organic group.

  In the general formula (III), the group 4 or group 13 metal element represented by M is preferably aluminum, zirconium, or titanium, and particularly preferably zirconium. The cured product of zirconium alkoxide or chelate does not have an absorption wavelength in the emission wavelength region of the general LED chip 3 (particularly blue light (wavelength 420 to 485 nm). The light emitted from the LED chip is difficult to be absorbed.

  In the general formula (III), the hydrolyzable group represented by X may be a group that is hydrolyzed with water to form a hydroxyl group. Preferable examples of the hydrolyzable group include a lower alkoxy group having 1 to 5 carbon atoms, an acetoxy group, a butanoxime group, a chloro group and the like. In general formula (III), all the groups represented by X may be the same group or different groups.

  The hydrolyzable group represented by X is hydrolyzed and released. Therefore, the group produced after hydrolysis is neutral and is preferably a light boiling group. Therefore, the group represented by X is preferably a lower alkoxy group having 1 to 5 carbon atoms, more preferably a methoxy group or an ethoxy group.

  In the general formula (III), the monovalent organic group represented by Y may be a monovalent organic group contained in a general silane coupling agent. Specifically, an aliphatic group, an alicyclic group, an aromatic group, an oil having 1 to 1000 carbon atoms, preferably 500 or less, more preferably 100 or less, further preferably 40 or less, and particularly preferably 6 or less. It may be a ring aromatic group. The organic group represented by Y may be an aliphatic group, an alicyclic group, an aromatic group, or a group in which an alicyclic aromatic group is bonded via a linking group. The linking group may be an atom such as O, N, or S, or an atomic group containing these.

  The organic group represented by Y may have a substituent. Examples of the substituent include halogen atoms such as F, Cl, Br, and I; vinyl group, methacryloxy group, acryloxy group, styryl group, mercapto group, epoxy group, epoxycyclohexyl group, glycidoxy group, amino group, cyano group, Organic groups such as nitro group, sulfonic acid group, carboxy group, hydroxy group, acyl group, alkoxy group, imino group and phenyl group are included.

  Specific examples of the metal alkoxide or metal chelate of aluminum represented by the general formula (III) include aluminum triisopropoxide, aluminum tri-n-butoxide, aluminum tri-t-butoxide, aluminum triethoxide and the like.

  Specific examples of the metal alkoxide or metal chelate of zirconium represented by the general formula (III) include zirconium tetramethoxide, zirconium tetraethoxide, zirconium tetra n-propoxide, zirconium tetra i-propoxide, zirconium tetra n- Examples include butoxide, zirconium tetra-i-butoxide, zirconium tetra-t-butoxide, zirconium dimethacrylate dibutoxide, dibutoxyzirconium bis (ethylacetoacetate), and the like.

  Specific examples of the metal alkoxide or metal chelate of the titanium element represented by the general formula (III) include titanium tetraisopropoxide, titanium tetra n-butoxide, titanium tetra i-butoxide, titanium methacrylate triisopropoxide, titanium tetra Examples include methoxypropoxide, titanium tetra n-propoxide, titanium tetraethoxide, titanium lactate, titanium bis (ethylhexoxy) bis (2-ethyl-3-hydroxyhexoxide), titanium acetylacetonate, and the like.

  However, the metal alkoxide or metal chelate exemplified above is a part of a commercially available organometallic alkoxide or metal chelate that is easily available. Metal alkoxides or metal chelates shown in the list of coupling agents and related products in Chapter 9 “Optimum Utilization Technology of Coupling Agents” published by the National Institute of Science and Technology are also applicable to the present invention.

  The amount of the metal alkoxide or metal chelate (organometallic compound) contained in the composition for light transmissive layer is preferably 5 to 100 parts by mass, more preferably 8 to 100 parts by mass with respect to 100 parts by mass of the polysiloxane precursor. 40 parts by mass, more preferably 10 to 15 parts by mass. When the amount of the metal alkoxide or metal chelate is less than 5 parts by mass, the above-described adhesion improving effect or the like cannot be obtained. On the other hand, when the amount of the metal alkoxide or metal chelate exceeds 100 parts by mass, the preservability of the composition for light transmissive layer is lowered.

iii-2) About application | coating and hardening of the composition for translucent layers The coating method in particular of the composition for translucent layers in this aspect is not restrict | limited. For example, blade coating, spin coating coating, dispenser coating, spray coating, and the like can be used, but according to spray coating, a thin light-transmitting layer can be formed.

  After application of the composition for light transmissive layer, the coating film is heated to 100 ° C. or higher, preferably 150 to 300 ° C., and the composition for light transmissive layer is dried and cured. If the heating temperature is less than 100 ° C., water and the like generated during the dehydration condensation of the polysiloxane precursor cannot be sufficiently removed, and the light resistance and the like of the translucent layer may be reduced.

(Iv) Mask Removal Step After forming the light transmitting layer, the mask disposed on the connection end portions 10 and 11 of the wire 4 is removed. The method for removing the mask is appropriately selected depending on the type of the mask and the like, and if it is a resist mask, it may be removed by etching. If it is a plate-like mask, it may be removed.

(V) Wavelength Conversion Layer Formation Step The wavelength conversion layer 6 may be formed so as to cover at least the light extraction surface of the LED chip 3, but it is preferable to form the wavelength conversion layer 6 on the entire surface of the substrate 1. The wavelength conversion layer 6 is obtained by preparing a composition for forming a wavelength conversion layer containing a transparent resin or a precursor thereof, and phosphor particles, and applying and curing the composition.

  The composition for forming a wavelength conversion layer includes a transparent resin or a precursor thereof and phosphor particles. A solvent, various additives, etc. may be contained as needed. The solvent is not particularly limited as long as it can dissolve the transparent resin or its precursor. For example, hydrocarbons such as toluene and xylene; ketones such as acetone and methyl ethyl ketone; diethyl ether and tetrahydrofuran And ethers such as propylene glycol monomethyl ether acetate and ethyl acetate.

  The composition for forming the wavelength conversion layer can be mixed, for example, with a stirring mill, a blade kneading stirring device, a rotation / revolution mixer, or the like. By adjusting the stirring conditions, it is possible to suppress the precipitation of the phosphor particles in the wavelength conversion layer forming composition.

  There is no restriction | limiting in particular in the coating method of the composition for wavelength conversion layer formation. For example, the wavelength conversion layer forming composition can be applied by a general application apparatus such as a dispenser. Moreover, the curing method and curing conditions of the wavelength conversion layer forming composition are appropriately selected depending on the type of the transparent resin. An example of the curing method is heat curing.

(2) 2nd aspect In the manufacturing method of a 2nd aspect, the following four processes are performed.
i) A step of arranging an LED chip on a substrate on which a plurality of lead frames are arranged, and electrically connecting the lead frame and the upper surface of the LED chip via wires.
ii) A step of applying a composition for a covering member containing a resin on a connecting end portion of the wire with the lead frame and / or a connecting end portion of the wire with the LED chip, and curing the composition to form a covering member.
iii) A step of applying a composition for a light transmissive layer containing a polysiloxane precursor and a solvent on the lead frame and curing the composition to form a light transmissive layer.
iv) A step of applying a wavelength conversion layer composition containing a transparent resin and phosphor particles so as to cover the light extraction surface of the LED chip, and curing the composition to form a wavelength conversion layer.

  In the manufacturing method of this aspect, the covering member 7 is formed before the light-transmitting layer 5 is formed. Accordingly, the LED device shown in FIG. 2; that is, the covering member 7 covers the connection end 10 of the wire 4 with the lead frames 2 and 2 ′ and / or the connection end 11 of the wire 4 with the LED chip 3. LED device is obtained. In the LED device shown in FIG. 2, the covering member 7 covers the two connection end portions 10.

i) LED chip mounting step The LED chip 3 is fixed to the substrate 1 on which the plurality of lead frames 2 and 2 ′ are arranged, and the upper surface of the LED chip 3 and the lead frames 2 and 2 ′ are connected via the wires 4. Connect electrically. The method for fixing the LED chip 3 to the substrate 1, the connection between the LED chip 3 and the wire 4, and the connection method between the lead frames 2, 2 ′ and the wire 4 are the same as in the LED chip mounting step of the first aspect. sell.

ii) Cover member forming step The cover member 7 is formed on the connection end 10 of the wire 4 with the lead frames 2 and 2 ′ and the connection end 11 of the wire 4 with the LED chip 3. At this time, the covering member 7 may be formed on all the connection end portions 10 and 11, or the covering member 7 may be formed only on a part of the connection end portions 10 and 11.

  The method for forming the covering member 7 is not particularly limited. It may be a method of preparing a composition for a covering member containing a resin and a solvent, applying the composition, and curing it. The resin may be a silicone resin or an epoxy resin. The solvent is not particularly limited as long as it can dissolve the resin or the precursor thereof, and examples thereof include hydrocarbons such as toluene and xylene; ketones such as acetone and methyl ethyl ketone; diethyl ether and tetrahydrofuran. Ethers, esters such as propylene glycol monomethyl ether acetate and ethyl acetate can be used.

  The coating method of the coating member composition is not particularly limited, and may be a method of coating the coating member composition on the desired connection end portions 10 and 11 with a general coating apparatus such as a dispenser. The curing method and curing conditions of the coating member composition are appropriately selected depending on the type of resin. An example of the curing method is heat curing.

iii) Translucent Layer Formation Step The translucent layer composition is applied to the substrate 1 on which the above-described covering member 7 is disposed at the connection end portions 10 and 11 and cured to form the translucent layer 5. . The composition of the composition for light transmissive layer and the coating / curing method of the composition for light transmissive layer can be the same as in the first embodiment.

iv) Wavelength conversion layer forming step The wavelength conversion layer 6 may be formed so as to cover at least the light extraction surface of the LED chip 3, but the wavelength conversion layer 6 is preferably formed on the entire surface of the substrate 1. The wavelength conversion layer is obtained by preparing a composition for forming a wavelength conversion layer containing a transparent resin or a precursor thereof, and phosphor particles, and applying and curing the composition. The composition for wavelength conversion layer, the coating method and the curing method thereof may be the same as the wavelength conversion layer forming step of the first aspect.

(3) 3rd aspect In the manufacturing method of a 3rd aspect, the following four processes are performed.
i) A step of arranging an LED chip on a substrate on which a plurality of lead frames are arranged, and electrically connecting the lead frame and the upper surface of the LED chip via wires.
ii) Forming partition walls in the gaps between the lead frames
iii) A step of applying a light-transmitting layer composition containing a polysiloxane precursor and a solvent to one region separated by a partition wall and curing the composition to form a light-transmitting layer
iv) A step of applying a wavelength conversion layer composition containing a transparent resin and phosphor particles so as to cover the LED chip, and curing the composition to form a wavelength conversion layer

  In the manufacturing method of this aspect, the partition wall 8 is formed in the gap between the lead frames 2 and 2 ′. And the composition for translucent layers is apply | coated to one area | region (in FIG. 3, the lead frame 2 side) separated by the partition 8. As shown in FIG. Therefore, according to the manufacturing method of this aspect, the LED device shown in FIG. 3; the LED device in which the light-transmitting layer 5 is formed only on the desired lead frame 2 side can be obtained.

i) LED chip mounting step The LED chip 3 is fixed to the substrate 1 on which the plurality of lead frames 2 and 2 ′ are arranged, and the upper surface of the LED chip 3 and the lead frames 2 and 2 ′ are connected via the wires 4. Connect electrically. The method for fixing the LED chip 3 to the substrate 1, the connection between the LED chip 3 and the wire 4, and the connection method between the lead frames 2, 2 ′ and the wire 4 are the same as in the LED chip mounting step of the first aspect. sell.

ii) Partition formation process A partition is formed in the gap between the lead frames. The method for forming the partition is not particularly limited. For example, it may be a method in which a partition wall composition containing a resin, a precursor thereof, a solvent, and the like is applied to a gap between a pair of lead frames and cured.

  The type of resin contained in the partition wall composition is not particularly limited, and may be, for example, an epoxy resin or a silicone resin. The solvent is not particularly limited as long as it can dissolve the resin or the precursor thereof, for example, hydrocarbons such as toluene and xylene; ketones such as acetone and methyl ethyl ketone; diethyl ether and tetrahydrofuran And ethers such as propylene glycol monomethyl ether acetate and ethyl acetate.

  The method for applying the partition wall composition is not particularly limited. For example, the partition wall composition is applied to a desired width by a coating device such as a dispenser. Moreover, the hardening method and hardening conditions of the composition for partition are selected suitably by the kind of transparent resin, and heat hardening is mentioned as an example of the hardening method. In addition, when the partition with the desired thickness cannot be obtained by one application of the partition wall composition, the partition wall composition may be applied and cured in a plurality of times.

  Further, the method of forming the partition is not limited to the above method, and for example, a method of placing a resin member formed in a desired width, length, and height in the gap between the lead frames. May be.

iii) Translucent layer forming step The translucent layer composition is applied to one of the regions separated by the partition walls 8 and cured to form the translucent layer 5. The light-transmitting layer composition may be applied by any method as long as the light-transmitting layer composition does not enter the other lead frame 2 ′ beyond the partition wall 8. For example, the light-transmitting layer composition may be dispensed with a dispenser. Or the like. The light-transmitting layer composition applied in this embodiment and the method of curing the light-transmitting layer composition can be the same as in the first embodiment.

(Iv) Wavelength Conversion Layer Formation Step The wavelength conversion layer 6 may be formed so as to cover at least the light extraction surface of the LED chip 3, but it is preferable to form the wavelength conversion layer 6 over the entire surface of the substrate 1. The wavelength conversion layer 6 is obtained by preparing a composition for forming a wavelength conversion layer containing a transparent resin or a precursor thereof, and phosphor particles, and applying and curing the composition. The composition for wavelength conversion layer, the coating method and the curing method thereof may be the same as the wavelength conversion layer step of the first aspect.

(4) 4th aspect In the manufacturing method of a 4th aspect, the following four processes are performed.
i) A step of arranging an LED chip on a substrate on which a plurality of lead frames are arranged, and electrically connecting the lead frame and the upper surface of the LED chip via wires.
ii) A step of applying a liquid repellent compound to the connection end of the wire with the lead frame and / or the connection end of the wire with the LED chip and drying it.
iii) A step of applying a light transmissive layer composition containing a polysiloxane precursor and a solvent on a lead frame, and curing the composition to form a light transmissive layer.
iv) A step of applying a wavelength conversion layer composition containing a transparent resin and phosphor particles so as to cover the light extraction surface of the LED chip, and curing the composition to form a wavelength conversion layer.

  In the manufacturing method of this embodiment, the liquid repellent compound 9 is applied to the connection end portions 10 and 11 of the wire 4. Therefore, the composition for light transmissive layer does not adhere on the connection end portions 10 and 11. Accordingly, the translucent layer 5 is not formed on the connection end portions 10 and 11, and the LED device shown in FIG. 4; that is, the wavelength conversion layer 6 is connected to the lead frames 2 and 2 ′ of the wire 4 at the connection end portion 10. And / or the LED apparatus which contact | connects the connection end part 11 with the LED chip 3 of the wire 4 is obtained. In the LED device shown in FIG. 4, only one connection end 10 out of the connection ends 10 and 11 is in contact with the wavelength conversion layer 6.

i) LED chip mounting step The LED chip 3 is fixed to the substrate 1 on which the plurality of lead frames 2 and 2 ′ are arranged, and the upper surface of the LED chip 3 and the lead frames 2 and 2 ′ are connected via the wires 4. Connect electrically. The method for fixing the LED chip 3 to the substrate 1, the connection between the LED chip 3 and the wire 4, and the connection method between the lead frames 2, 2 ′ and the wire 4 are the same as in the LED chip mounting step of the first aspect. sell.

ii) Liquid repellent compound application step The liquid repellent compound 9 is applied to the connection end 10 of the wire 4 with the lead frames 2 and 2 ′ and / or the connection end 11 of the wire 4 with the LED chip 3. The liquid repellent compound 9 may be applied to all the connection end portions 10 and 11, or the liquid repellent compound 9 may be applied only to some of the connection end portions 10 and 11.

  Examples of the liquid repellent compound include fluorine compounds and silicone compounds. Examples of fluorine compounds include OPTOOL ((trade name) manufactured by Daikin), Durasurf ((trade name) manufactured by Harves), and the like. Examples of silicone compounds include Takata Quantum ((trade name) manufactured by NOF Corporation) and the like. From the viewpoint of making the composition for light transmissive layer more difficult to adhere, a fluorine-based compound is preferable.

  The application method of the liquid repellent compound 9 is not particularly limited, and may be a method of applying the liquid repellent compound 9 on a desired connection end with a dispenser or the like. The liquid repellent compound 9 may be applied only to the connection end portions 10 and 11, but may also be applied to the lead frames 2 and 2 ′ around the connection end portions 10 and 11 or the LED chip 3. preferable. Thereby, it can suppress reliably that the composition for translucent layers adheres to the connection edge parts 10 and 11 vicinity.

  The drying method and drying conditions of the liquid repellent compound are appropriately selected depending on the type of the liquid repellent compound. An example of the drying method is heat drying.

iii) Translucent Layer Formation Step The translucent layer composition is applied to the substrate 1 on which the above-described covering member 7 is disposed at the connection end portions 10 and 11 and cured to form the translucent layer 5. . The composition of the composition for light transmissive layer and the coating / curing method of the composition for light transmissive layer can be the same as in the first embodiment.

(Iv) Wavelength Conversion Layer Formation Step The wavelength conversion layer 6 may be formed so as to cover at least the light extraction surface of the LED chip 3, but it is preferable to form the wavelength conversion layer 6 over the entire surface of the substrate 1. The wavelength conversion layer 6 is obtained by preparing a composition for forming a wavelength conversion layer containing a transparent resin or a precursor thereof, and phosphor particles, and applying and curing the composition. The composition for wavelength conversion layer, the coating method and the curing method thereof may be the same as the wavelength conversion layer step of the first aspect.

(5) Fifth Aspect In the manufacturing method according to the fifth aspect, the following three steps are performed.
i) A step of arranging an LED chip on a substrate on which a plurality of lead frames are arranged, and electrically connecting the lead frame and the upper surface of the LED chip via wires.
ii) A step of applying a light-transmitting layer composition containing a polysiloxane precursor and a solvent while avoiding the upper surface of the LED chip, and curing the composition to form a light-transmitting layer having a thickness smaller than the height of the LED chip.
iii) A step of forming a wavelength conversion layer by applying and curing a composition for wavelength conversion layer containing a transparent resin and phosphor particles on the light transmitting layer.

  In the manufacturing method of this aspect, the composition for a light transmissive layer is applied while avoiding the upper surface of the LED chip 3, and the thickness of the light transmissive layer 5 is made thinner than the height of the LED chip 3. Therefore, the translucent layer 5 is not formed on the upper surface of the LED chip 3, and the LED device shown in FIG. 5; that is, the LED device in which the wavelength conversion layer 6 is in contact with the connection end 11 of the wire 4 with the LED chip 3. Is obtained.

i) LED chip mounting step The LED chip 3 is fixed to the substrate 1 on which the plurality of lead frames 2 and 2 ′ are arranged, and the upper surface of the LED chip 3 and the lead frames 2 and 2 ′ are connected via the wires 4. Connect electrically. The method for fixing the LED chip 3 to the substrate 1, the connection between the LED chip 3 and the wire 4, and the connection method between the lead frames 2, 2 ′ and the wire 4 are the same as in the LED chip mounting step of the first aspect. sell.

ii) Translucent Layer Formation Step In this embodiment, the upper surface of the LED chip 3 is avoided; that is, the translucent layer composition is applied so that the translucent layer composition does not adhere to the upper surface of the LED chip 3. The method for applying the light transmissive layer composition is not particularly limited as long as the light transmissive layer composition does not adhere to the upper surface of the LED chip 3. For example, it may be a method of applying from a position away from the LED chip 3 with a dispenser or the like. When applying the composition for light transmissive layer, the coating film thickness of the composition for light transmissive layer is adjusted so as not to exceed the height of the LED chip 3. The light-transmitting layer composition applied in this embodiment and the method of curing the light-transmitting layer composition can be the same as in the first embodiment.

iii) Wavelength conversion layer forming step The wavelength conversion layer 6 may be formed so as to cover at least the light extraction surface of the LED chip 3, but the wavelength conversion layer 6 is preferably formed on the entire surface of the substrate 1. The wavelength conversion layer 6 is obtained by preparing a composition for forming a wavelength conversion layer containing a transparent resin or a precursor thereof, and phosphor particles, and applying and curing the composition. The composition for wavelength conversion layer, the coating method and the curing method thereof may be the same as the wavelength conversion layer step of the first aspect.

  Hereinafter, the present invention will be described in more detail with reference to examples. However, the scope of the present invention is not limited by this.

<Preparation of phosphor particles>
Below, the preparation method of a fluorescent substance particle is shown.
As the phosphor material, 7.41 g of Y ₂ O ₃ , 4.01 g of Gd ₂ O ₃ , 0.63 g of CeO ₂ , and 7.77 g of Al ₂ O ₃ were sufficiently mixed. An appropriate amount of ammonium fluoride was mixed as a flux to this and filled in an aluminum crucible. The packing is fired in a reducing atmosphere in which hydrogen-containing nitrogen gas is circulated in a temperature range of 1350 to 1450 ° C. for 2 to 5 hours to obtain a fired product ((Y _0.72 Gd _0.24 ) ₃ Al ₅ O ₁₂ : Ce _0.04 ).

  The obtained fired product was pulverized, washed, separated, and dried to obtain yellow phosphor particles having an average particle size of about 10 μm. When the emission wavelength of excitation light with a wavelength of 465 nm was measured, it had a peak wavelength at a wavelength of approximately 570 nm.

<Preparation of composition for translucent layer>
Tetramethoxysilane 36.0 g, methyltrimethoxysilane 10.7 g, dimethoxydimethylsilane 9.48 g, methanol 37.5 g, and acetone 37.5 g were mixed and stirred. Furthermore, 51.1 g of water and 4.4 μL of 60% nitric acid were added, and the mixture was further stirred for 3 hours. Thereafter, it was aged at 26 ° C. for 2 days. The resulting composition is diluted with methanol so that the solid content of the polysiloxane precursor is 10%, and contains a polysiloxane precursor of tetrafunctional component: trifunctional component: bifunctional component = 6: 2: 2. A polysiloxane solution was obtained. Subsequently, 3.0 g of a ZrO ₂ dispersion (manufactured by Sakai Chemical Co., Ltd.) in which zirconium oxide (ZrO ₂ ) fine particles having an average primary particle size of 5 nm are dispersed is added to 20.0 g of the polysiloxane solution, A composition was obtained. The concentration of zirconium oxide with respect to the solid content of the composition for light transmissive layer was 45% by mass.

(Comparative Example 1)
Aromatic polyamide circular package (substrate) 1 (opening diameter 3 mm, bottom surface diameter 2 mm, opening wall inclination angle 60 ° shown in FIG. 6 (A) having lead frames 2 and 2 ′ with silver-plated surfaces. ) Was prepared. One blue LED chip 3 (cuboid shape: 200 μm × 300 μm × 100 μm) was fixed to the center of the opening of the circular package with an adhesive for die bonding. The anode electrode of the LED chip 3 was connected to one lead frame 2 with a wire 4 (gold wire). The cathode electrode of the LED chip 3 was connected to the other lead frame 2 ′ with a wire 4.

  As shown in FIG. 6B, the light-transmitting layer composition was spray-coated on the entire bottom surface of the opening of the package 1. And it baked at 150 degrees for 1 hour, and formed the 1.5 micrometer translucent layer 5. As shown in FIG. Thereafter, a composition for a wavelength conversion layer in which 1 g of the phosphor particles was dispersed in 9 g of a silicone resin (OE6630) was prepared. The composition for wavelength conversion layer was applied onto the light-transmitting layer 5 with a dispenser, and then heated at 150 ° C. for 1 hour to be cured. The thickness of the obtained wavelength conversion layer 6 was 2.5 mm.

Example 1
The same package 1 and LED chip 3 as those in Comparative Example 1 were prepared, and the lead frames 2 and 2 ′ of the package 1 and the LED chip 3 were connected by wires 4. After that, a mask was placed on the connection end 10 of the one wire 4 with the lead frame 2 ′, and the composition for light transmissive layer was sprayed onto the bottom of the opening of the package 1. Then, it was made to harden | cure at 150 degreeC for 1 hour, the translucent layer 5 was formed, and the said mask was removed. The same composition for wavelength conversion layer as Comparative Example 1 was prepared. The composition for wavelength conversion layer was applied onto the light-transmitting layer 5 with a dispenser, and then cured by heating at 150 ° C. for 1 hour to obtain the LED device shown in FIG. The thickness of the obtained wavelength conversion layer 6 was 2.5 mm.

(Example 2)
The same package 1 and LED chip 3 as those in Comparative Example 1 were prepared, and the lead frames 2 and 2 ′ of the package 1 and the LED chip 3 were connected by wires 4. Thereafter, a silicone resin (OE6630 manufactured by Toray Dow Co., Ltd.) was applied on the connection end 10 of the wire 4 with the lead frames 2 and 2 ′ using a dispenser, and cured at 150 ° C. for 1 hour. Thereafter, the light-transmitting layer 5 was formed in the same manner as in Example 1 except that the mask was not disposed, and the wavelength conversion layer 6 was further formed to obtain the LED device shown in FIG.

(Example 3)
The same package 1 and LED chip 3 as those in Comparative Example 1 were prepared, and the lead frames 2 and 2 ′ of the package 1 and the LED chip 3 were connected by wires 4. Thereafter, silicone resin (OE6630, manufactured by Toray Dow Co., Ltd.) was applied to the gap between the pair of lead frames 2 and 2 ′ with a dispenser, and cured at 150 ° C. for 1 hour to form the partition walls 8. The height of the obtained partition was 50 μm. And the composition for translucent layers was apply | coated with the dispenser on the lead frame 2 by the side where the LED chip 3 is arrange | positioned among the area | regions separated by the partition 8. As shown in FIG. Then, it was made to harden | cure at 150 degreeC for 1 hour, and the translucent layer 5 was obtained. Furthermore, the same composition for wavelength conversion layers as Comparative Example 1 was prepared. This wavelength conversion layer composition was applied onto the light-transmitting layer 5 with a dispenser, and then cured by heating at 150 ° C. for 1 hour, to obtain the LED device shown in FIG.

Example 4
The same package 1 and LED chip 3 as those in Comparative Example 1 were prepared, and the lead frames 2 and 2 ′ of the package 1 and the LED chip 3 were connected by wires 4. Thereafter, a liquid repellent compound (Durasurf DS1600: manufactured by Harves Co.) was applied on the end of one wire 4 connected to the lead frame 2 'by a dispenser, and heated at 150 ° for 1 hour to dry. Thereafter, the light-transmitting layer 5 was formed in the same manner as in Example 1 except that the mask was not disposed, and the wavelength conversion layer 6 was further formed to obtain the LED device shown in FIG.

(Example 5)
Similarly to Comparative Example 1, the lead frames 2 and 2 ′ and the LED chip 3 were connected. Then, the composition for translucent layers was apply | coated with the dispenser, avoiding the upper surface of LED chip 3. FIG. The composition for light transmissive layer was injected from the end side of the package 1. The thickness of the obtained composition for translucent layers was 1.5 micrometers. Furthermore, the wavelength conversion layer 6 was formed similarly to Example 1, and the LED device shown by FIG. 5 was obtained.

<Heat resistance evaluation>
100 LED devices of Examples and Comparative Examples were prepared. The produced LED device was put in a 120 ° C. oven and allowed to stand for 1000 hours. About each LED apparatus, the total luminous flux measurement was performed before putting in an oven and after putting. The total luminous flux was measured with a spectral radiance meter (CS-2000, manufactured by Konica Minolta Sensing).

Then, the LED device having a total light flux to initial ratio (total light flux value after test / total light flux value before test × 100) of 95% or more is passed, and the total light flux to initial ratio (total light flux value after test / total light flux value before test). The LED device having x100) of less than 95% was judged as rejected.
Among the LED devices manufactured in each of the examples and comparative examples, ○ when the ratio of the acceptable product is 99% or more, △ when the ratio of the acceptable product is 95% or more and less than 99%, and the ratio of the acceptable product is The case of less than 95% was evaluated as x. The results are shown in Table 1.

<Corrosion resistance evaluation>
The corrosion resistance of the LED devices produced in each example and comparative example was evaluated. Specifically, based on the gas exposure test of JIS standard (JIS C 60068-2-43), the produced LED device was placed in an atmosphere (temperature 25 ° C., relative humidity 75% RH) with hydrogen sulfide gas of 15 ppm for 1000 hours. Exposed. Each LED device was subjected to total luminous flux measurement before and after exposure, and evaluated for corrosion resistance according to the following criteria. The results are shown in Table 1.
-The ratio of the total luminous flux to the initial ratio (total luminous flux after exposure to sulfurized gas / total luminous flux before exposure to sulfurized gas x 100) is 96% or more:
The ratio of the total luminous flux to the initial ratio (total luminous flux value after exposure to sulfurized gas / total luminous flux value before sulfurized gas exposure × 100) is 92% or more and less than 96%: Δ
-The total luminous flux to initial ratio (total luminous flux value after exposure to sulfurized gas / total luminous flux value before sulfurized gas exposure x 100) is less than 92%: x

  As shown in Table 1 above, when the translucent layer has a portion that does not contact the connection end of the wire with the lead frame (Examples 1 to 4), or the translucent layer is connected to the upper surface of the LED chip of the wire. When it had a part which does not contact an edge (example 5), heat resistance evaluation was favorable. In the embodiments of Examples 1 to 5, the connection end portion of the wire with the lead frame and the connection end portion of the wire with the LED chip are in contact with the wavelength conversion layer and the covering member having relatively high flexibility. Therefore, even if heat is applied to the LED device and the substrate is thermally expanded, it is presumed that the influence is small.

  On the other hand, when the translucent layer is in contact with all of the connection end of the wire to the lead frame and the connection end of the wire to the upper surface of the LED chip (Comparative Example 1), the heat resistance evaluation result is low. It was. In this aspect, since the connection ends of all the wires are in contact with the light transmissive layer, when the LED device is heated, the wire tends to follow the deformation of the substrate, and the light transmissive layer is easily stressed. It is presumed that cracks were likely to occur at the connection end of the.

  Even if the light-transmitting layer did not cover a part of the lead frame (Examples 1 to 5), the sulfuration resistance evaluation was relatively good. Since the translucent layer covers the lead frame in the region other than the connection end portion, it is assumed that the area corroded by the hydrogen sulfide gas was small.

  The LED device of the present invention has high gas barrier properties and light extraction properties over a long period of time. Therefore, both can be applied to indoor and outdoor lighting devices.

DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Lead frame 3 LED chip 4 Wire 5 Translucent layer 6 Wavelength conversion layer 7 Cover member 8 Partition 9 Liquid repellent compound 10,11 Wire connection end 21 Insulating substrate

Claims (10)

A substrate on which a plurality of lead frames are disposed; an LED chip that is disposed on the substrate and emits light of a specific wavelength; a wire that electrically connects the lead frame and the upper surface of the LED chip; and the leads In an LED device that covers a frame and includes a light-transmitting layer that includes polysiloxane, and a wavelength conversion layer that covers the LED chip and includes a transparent resin and phosphor particles,
The LED device, wherein the translucent layer does not contact a connection end of the wire with the lead frame and / or a connection end of the wire with the LED chip.   The LED device according to claim 1, wherein the wavelength conversion layer contacts a connection end portion of the wire with the lead frame and / or a connection end portion of the wire with the LED chip.   The LED device according to claim 1, further comprising a covering member that covers a connection end portion of the wire with the lead frame and / or a connection end portion of the wire with the LED chip.   The LED device according to claim 1, wherein the light-transmitting layer contains metal oxide fine particles. It is a manufacturing method of the LED device according to claim 1,
A step of disposing an LED chip on a substrate on which a plurality of lead frames are disposed, and electrically connecting the lead frame and the upper surface of the LED chip via wires;
Disposing a mask at the connection end of the wire with the lead frame and / or the connection end of the wire with the LED chip;
Applying a composition for a light-transmitting layer containing a polysiloxane precursor and a solvent on the lead frame and curing the composition to form a light-transmitting layer;
Removing the mask;
A method for producing an LED device, comprising: applying a composition for a wavelength conversion layer containing a transparent resin and phosphor particles so as to cover the LED chip, and curing the composition to form a wavelength conversion layer. It is a manufacturing method of the LED device according to claim 1,
A step of disposing an LED chip on a substrate on which a plurality of lead frames are disposed, and electrically connecting the lead frame and the upper surface of the LED chip via wires;
Applying a composition for a covering member containing a resin on a connection end portion of the wire with the lead frame and / or a connection end portion of the wire with the LED chip, and curing the composition to form a covering member; ,
Applying a composition for a light-transmitting layer containing a polysiloxane precursor and a solvent on the lead frame and curing the composition to form a light-transmitting layer;
A method for producing an LED device, comprising: applying a composition for a wavelength conversion layer containing a transparent resin and phosphor particles so as to cover the LED chip, and curing the composition to form a wavelength conversion layer. It is a manufacturing method of the LED device according to claim 1,
A step of disposing an LED chip on a substrate on which a plurality of lead frames are disposed, and electrically connecting the lead frame and the upper surface of the LED chip via wires;
Forming a partition in the gap between the lead frames;
Applying a light transmissive layer composition containing a polysiloxane precursor and a solvent to one region separated by the partition wall, and curing the composition to form a light transmissive layer;
A method for producing an LED device, comprising: applying a composition for a wavelength conversion layer containing a transparent resin and phosphor particles so as to cover the LED chip, and curing the composition to form a wavelength conversion layer. It is a manufacturing method of the LED device according to claim 1,
A step of disposing an LED chip on a substrate on which a plurality of lead frames are disposed, and electrically connecting the lead frame and the upper surface of the LED chip via wires;
Applying a liquid repellent compound to the connection end of the wire with the lead frame and / or the connection end of the wire to the LED chip, and drying;
Applying a composition for a light-transmitting layer containing a polysiloxane precursor and a solvent on the lead frame and curing the composition to form a light-transmitting layer;
A method for producing an LED device, comprising: applying a composition for a wavelength conversion layer containing a transparent resin and phosphor particles so as to cover the LED chip, and curing the composition to form a wavelength conversion layer.   The manufacturing method of the LED device of Claim 8 whose said liquid repellent compound is a fluorine-type compound. It is a manufacturing method of the LED device according to claim 1,
A step of disposing an LED chip on a substrate on which a plurality of lead frames are disposed, and electrically connecting the lead frame and the upper surface of the LED chip via wires;
A step of applying a composition for a light transmissive layer containing a polysiloxane precursor and a solvent on the lead frame while avoiding the upper surface of the LED chip, and curing the composition to form a light transmissive layer having a thickness smaller than the height of the LED chip. When,
A method for producing an LED device, comprising: applying a composition for a wavelength conversion layer containing a transparent resin and phosphor particles so as to cover the LED chip, and curing the composition to form a wavelength conversion layer.

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