JP2014041923A - Manufacturing method and manufacturing apparatus of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing apparatus of a semiconductor device which can shorten the time required for a metal layer deposition process which needs heating, for example, a cooling process after a sputtering process or eliminate the need of the cooling process.SOLUTION: A manufacturing method of a semiconductor device includes the steps of: bonding a semiconductor substrate to a glass support through an adhesive bond; depositing a metal layer on the semiconductor substrate and the glass support; and placing a clamp including a cooling element in contact with the metal layer deposited on the glass support and performing cooling through the metal layer.

Description

  The present invention relates to a semiconductor device manufacturing method and a manufacturing apparatus.

  In conventional through silicon via (TSV) formation, a wafer (semiconductor substrate) is attached to a glass support via an adhesive and processed. In the step of sputtering the barrier layer Ti and the seed layer Cu, the glass support has heat because of its low thermal conductivity. Since the adhesive has low heat resistance, when continuous sputtering treatment continues, cooling is performed after sputtering so that the adhesive is not overheated by the heat of the glass support.

  Japanese Patent Application Laid-Open No. H10-228688 discloses that the bottom surface of the wafer is adsorbed and cooled on a transfer chuck to which a Peltier element is attached.

  Japanese Patent Application Laid-Open No. H11-228688 discloses that the temperature distribution of the wafer is controlled by providing a Peltier element on the suction surface of the wafer chuck that sucks the bottom surface of the wafer.

Japanese Patent Laid-Open No. 11-168131 JP-A-5-13296

  The following analysis is given by the inventor.

  However, when cooling is performed after sputtering, there is a problem in that throughput decreases.

  In both examples disclosed in Patent Document 1 or 2, only the bottom of the wafer is directly cooled by a Peltier element. Patent Document 1 or 2 does not disclose a glass support or an adhesive for attaching a wafer to the glass support.

  A method of manufacturing a semiconductor device according to a first aspect of the present invention includes a step of attaching a semiconductor substrate to a glass support via an adhesive, and a step of forming a metal layer on the semiconductor substrate and the glass support. And a step of bringing a clamp provided with a cooling element into contact with the metal layer formed on the glass support and performing cooling through the metal layer.

  A method for manufacturing a semiconductor device according to a second aspect of the present invention includes a step of attaching a semiconductor substrate to a glass support via an adhesive, and after forming a metal layer on the semiconductor substrate and the glass support, A step of cooling the glass support from the side face by bringing a clamp provided with a cooling element into direct or indirect contact with at least the side face of the glass support.

  A semiconductor device manufacturing apparatus according to a third aspect of the present invention is a semiconductor device manufacturing apparatus including a transfer arm for transferring a semiconductor device, and the transfer arm can clamp a side surface of the semiconductor device. It comprises a plurality of clamps having cooling elements.

  According to the present invention, when clamping and transporting a semiconductor device in which a semiconductor substrate is bonded to a glass support via an adhesive, the metal substrate having a high thermal conductivity is formed on the semiconductor device. Clamping and cooling can be performed simultaneously through the side surface of the semiconductor device that is close to the adhesive, so that the cooling effect on the adhesive with low heat resistance is high, and the metal layer that requires heating is formed. The time required for the cooling process after the film process can be shortened, or the cooling process itself can be eliminated.

(A) is a flowchart of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention, (B) is a flowchart of the process including the manufacturing method of (A), (C) is (B). It is sectional drawing of the semiconductor device by the process of. (A)-(D) are explanatory drawings of the manufacturing method and manufacturing apparatus of the semiconductor device which concern on one Embodiment of this invention, (A) is a partial top view of a manufacturing apparatus, (B)-(D) It is process drawing. It is a schematic diagram which shows the whole sputtering apparatus containing the part shown to FIG. 2 (A). (A)-(D) are explanatory drawings of the manufacturing method and manufacturing apparatus of the semiconductor device which concern on other embodiment of this invention, (A) is a partial bottom view of a manufacturing apparatus, (B)-(D). Is a process diagram. It is a schematic diagram which shows the whole sputtering device containing the part shown to FIG. 4 (A).

  An embodiment of the present invention will be described with reference to the drawings. FIG. 1A is a flowchart for explaining an outline of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

  Referring to FIG. 1A, in step S1, a semiconductor substrate is attached to a glass support via an adhesive. In step S2, a metal layer is formed on the semiconductor substrate and the glass support by sputtering or the like. In step S3, the clamp provided with the cooling element is brought into contact with the metal layer formed on the glass support, and cooling is performed through the metal layer.

  Alternatively, in step S2 and step S3, after forming a metal layer on the semiconductor substrate and the glass support, a clamp provided with a cooling element is brought into direct or indirect contact with at least the side surface of the glass support to support the glass. The body is cooled from the side.

  FIG. 1B is a flowchart showing an intermediate process of the semiconductor device manufacturing method including the manufacturing method of FIG. Step S11 in FIG. 1B corresponds to step S1 in FIG. 1A, and step S16 in FIG. 1B corresponds to step S2 and step S3 in FIG.

  Referring to FIG. 1B, in step S11, the surface of the semiconductor substrate (wafer) is attached to a glass support using an adhesive, and in step S12, back grinding is performed. In step S13, a silicon nitride film is grown on the back surface of the semiconductor substrate. In step S14, a process of forming a through electrode pattern from the back surface of the semiconductor substrate is performed. In step S15, dry etching of the back surface through electrode and resist removal are performed. In step S16, sputtering is performed so that a Cu / Ti film (metal layer) is formed on the back surface of the semiconductor substrate and the side surface of the glass support. In step S17, a process of forming a pump pattern on the back surface of the semiconductor substrate is performed. In step S18, Cu and Au / Ni plating is performed on the back surface of the semiconductor substrate. In step S19, the bump resist formed on the back surface of the semiconductor substrate is peeled off and seed Cu / Ti removal is performed.

  FIG. 1C is a cross-sectional view of the semiconductor device manufactured through the process illustrated in FIG. Referring to FIG. 1C, a semiconductor device 1 includes a glass support 2 and a semiconductor substrate (wafer, for example, a silicon substrate) 4 attached on the glass support 2 with an adhesive 3 interposed therebetween. Yes. An intervening layer 5 is formed between the adhesive 3 and the glass support 2. The intervening layer 5 brings the semiconductor substrate 4 into close contact with the glass support 2 and facilitates peeling of the semiconductor substrate 4 from the glass support 2. A device layer 6, a backside silicon nitride film 7, and a Cu / Ti film 8 are formed on the semiconductor substrate 4. The Cu / Ti film 8 is a metal layer formed by sputtering in step S16. The Cu / Ti film 8 is formed so as to cover the outer periphery of the semiconductor device 1 to the semiconductor substrate 4, specifically, the back and side surfaces of the semiconductor substrate 4 and a part of the side surface of the glass support 2.

  In addition, the metal layer formed by sputtering can be formed by laminating or mixing a plurality of various metals alone or in addition to Cu and Ti.

  FIG. 2A is a diagram schematically showing a part of the semiconductor device manufacturing apparatus according to one embodiment of the present invention, and is a view of the holder as viewed from above. Referring to FIG. 2A, the manufacturing apparatus 10 includes a transfer arm 11 that transfers the semiconductor device 1.

  The transfer arm 11 includes a plurality of clamps (foldable movable parts) 12 having a cooling element 13 that can clamp the side surface of the semiconductor device 1. The plurality of clamps 12 are disposed on the peripheral edge of the holder 14 facing the bottom surface of the semiconductor device 1 (glass support 2). The transfer arm 11 takes the semiconductor device 1 clamped by the plurality of clamps 12 in and out of the processing chamber.

  The manufacturing apparatus 10 further includes lift pins 15 that lift the semiconductor device 1 in contact with the bottom surface of the semiconductor device 1 (glass support 2). A plurality of lift pins 15 are arranged at predetermined intervals. The holder 14 is formed in a shape that does not interfere with the plurality of lift pins 15 and has a notch and an opening.

  As the cooling element 13, for example, a Peltier element formed including a metal such as Cu can be used. The clamp may be by suction.

  2B to 2D are process diagrams for explaining a method for manufacturing a semiconductor device according to an embodiment of the present invention, and show a cross section taken along the line AA of FIG.

  Referring to FIG. 2B, the lift pin 15 is brought into contact with the bottom surface of the semiconductor device 1 on the stage 17 to lift the semiconductor device 1. In the semiconductor device 1, as shown in FIG. 1B, a semiconductor substrate (wafer) 4 is attached to the glass support 2 via an adhesive 3, and the back surface side of the semiconductor substrate 4, in particular, On the side surface, a Cu / Ti film 8 is sputtered as a metal layer. Note that only Ti may be sputtered as the metal layer.

  Referring to FIG. 2C, the transfer arm 11 is driven, the holder 14 is inserted between the stage 17 and the semiconductor device 1, and the holder 14 is brought into contact with the bottom surface of the glass support 2. Note that an electrical wiring 16 for driving the plurality of clamps 12 and the cooling element 13 is connected to the holder 14 through the transfer arm 11. Note that the holder 14 may cool the bottom surface of the glass support 2.

  Referring to FIG. 2D, the plurality of clamps 12 are driven to be bent, and the side surfaces of the semiconductor device 1 and the glass support 2 are clamped from the bottom side of the glass support 2 from the lower side. . Accordingly, the plurality of clamps 12 each mounting the cooling element 13 are in contact with the Cu / Ti film 8 formed on the side surface of the semiconductor device 1 or the glass support 2. That is, the Cu / Ti film 8, which is a metal layer having a high thermal conductivity, is directly cooled, and the portion close to the adhesive 3 to be quickly cooled is directly cooled because of low heat resistance. Therefore, according to this embodiment, by cooling the metal layer formed on the side surface of the glass support 2, a higher cooling effect can be obtained as compared with the case of cooling the bottom surface of the glass support. According to this embodiment, compared with the case where the bottom surface of the glass support is cooled, the cooling time can be shortened to about half, and a reduction in apparatus throughput can be prevented.

  In general, the thermal conductivity of the glass constituting the glass support is 1 W / mK, whereas the thermal conductivity of silicon constituting the semiconductor substrate is 168 W / mK, The thermal conductivity is very low. Therefore, in the semiconductor device in which the semiconductor substrate is attached to the glass support, it is understood that the cooling from the bottom surface side of the glass support is inefficient.

  FIG. 3 is a schematic view showing the entire manufacturing apparatus for a semiconductor device according to one embodiment of the present invention, in particular, the entire sputtering apparatus including the portion shown in FIG.

  Referring to FIG. 3, the sputtering apparatus 20 includes a plurality of processing chambers 21 to 25 and a plurality of rod lock chambers 26 and 27. The plurality of processing chambers 21 to 25 and the plurality of rod lock chambers 26 and 27 are arranged around the transfer arm 11 and the like shown in FIG. By driving the transfer arm 11, the clamped semiconductor device 1 is taken in and out of the plurality of processing chambers 21 to 25 and the plurality of rod lock chambers 26 and 27, and a predetermined process is executed in the order described below. .

  That is, preheating is performed in the first load lock chamber 26. In the fourth processing chamber 24, cooling is performed. On the stage 21a of the first processing chamber 21, RF etching is performed. In the fourth processing chamber 24, cooling is performed. On the stage 22a of the second processing chamber 22, Ti sputtering is performed to form a barrier Ti film. After sputtering, the semiconductor device 1 is simultaneously cooled while being transported by the plurality of clamps 12 that clamp the semiconductor device 1.

  In the fifth processing chamber 25, cooling is performed. On the stage 23a of the third processing chamber 23, Cu sputtering is performed to form a seed Cu film. Thereby, the Cu / Ti film 8 is formed at least on the side surface of the semiconductor device 1. After sputtering, the semiconductor device 1 is simultaneously cooled while being transported by the plurality of clamps 12 that clamp the semiconductor device 1. In the fifth processing chamber 25, cooling is performed. In the second load lock chamber 27, cooling is performed.

  Note that the cooling process before the sputtering process in the fourth processing chamber 24 can be omitted because the cooling effect is small even if the metal layer is cooled before the sputtering process.

  According to the present embodiment, the cooling time in the fifth processing chamber 25 is halved by the cooling shown in FIG. 2D, and the cooling time is shortened by about 2 minutes in total.

  The manufacturing method of the semiconductor device 1 according to the present embodiment described above basically includes the step of attaching the semiconductor substrate 4 to the glass support 2 via the adhesive 3, the semiconductor substrate 4 and the glass support 2. The metal layer (Cu / Ti film) 8 is formed on the glass substrate 2, and the clamp (movable part) 12 having the cooling element 13 is brought into contact with the metal layer 8 formed on the glass support 2, so that the metal layer 8 And a step of cooling from the side surface side of the glass support 2 by directly or indirectly contacting the clamp 12 having the cooling element 13 directly or indirectly with the side surface of the glass support 2. Yes.

The effect of this embodiment is illustrated below.
(1) When the semiconductor device 1 is clamped and transported, the semiconductor device 1 can be cooled while being clamped via the metal layer (for example, the Cu / Ti film 8) having a high thermal conductivity formed on the semiconductor device 1. The cooling effect of the adhesive 3 having low heat resistance is high, and the time required for the cooling process after the sputtering process can be shortened or eliminated.
(2) When the semiconductor device 1 is clamped and transported, the side surfaces of the semiconductor device 1 or the glass support 2 that are close to the adhesive (sticking part) 3 that attaches the semiconductor substrate 4 to the glass support 2 Thus, the cooling effect of the adhesive 3 having low heat resistance is high, and the time required for the cooling process after the sputtering process can be shortened or eliminated.

  Next, another embodiment (Embodiment 2) of the present invention will be described. In the above-described embodiment (Embodiment 1), the semiconductor device is clamped from the bottom surface side (glass support side). However, in this embodiment (Embodiment 2), the semiconductor device is clamped from above (semiconductor substrate side). To do. In addition, regarding the common points between the present embodiment and the embodiment, the column of the embodiment can be referred to as appropriate.

  FIG. 4A is a diagram schematically showing a part of a semiconductor device manufacturing apparatus according to another embodiment of the present invention, and is a view of the holder as viewed from below. Referring to FIG. 4A, the semiconductor device manufacturing apparatus 30 includes a transport arm 31 that transports the semiconductor device 1.

  The transfer arm 31 includes a plurality of clamps (foldable movable parts) 32 that can clamp the side surface of the semiconductor device 1 and have a cooling element 33. The plurality of clamps 32 are disposed on the peripheral edge of the holder 34 facing the upper surface of the semiconductor device 1 (the back surface of the semiconductor substrate 4). The transfer arm 31 takes the semiconductor device 1 clamped by the plurality of clamps 32 into and out of the processing chamber.

  The manufacturing apparatus 30 further includes lift pins 35 that lift the semiconductor device 1 in contact with the bottom surface of the semiconductor device 1. A plurality of lift pins 35 are arranged at a predetermined interval.

  4B to 4D are process diagrams for explaining a method of manufacturing a semiconductor device according to another embodiment of the present invention, and show a cross section taken along line AA of FIG. .

  Referring to FIG. 4B, the lift pin 35 is brought into contact with the bottom surface of the semiconductor device 1 on the stage 37 to lift the semiconductor device 1. In the semiconductor device 1, as shown in FIG. 1B, a semiconductor substrate (wafer) 4 is attached to the glass support 2 via an adhesive 3, and the back surface side of the semiconductor substrate 4, in particular, On the side surface, a Cu / Ti film 8 is sputtered as a metal layer.

  Referring to FIG. 4C, the transfer arm 31 is driven to position the holder 34 on the upper side of the semiconductor device 1. Electrical wiring 36 for driving the plurality of clamps 32 and the cooling element 33 is connected to the holder 34 through the transport arm 31.

  Referring to FIG. 4D, the plurality of clamps 32 are driven to be bent, and the side surfaces are clamped from the upper side of the semiconductor device 1 to the semiconductor substrate 4. Accordingly, the plurality of clamps 32 each mounting the cooling element 33 come into contact with the Cu / Ti film 8 formed on the side surface of the semiconductor device 1 or the glass support 2. That is, according to the present embodiment, the Cu / Ti film 8 which is a metal layer having a high thermal conductivity is directly cooled, and the portion close to the adhesive 3 to be cooled quickly is directly affected by the low heat resistance. To be cooled.

  Further, referring to FIG. 4C to FIG. 4D, according to the present embodiment, the semiconductor device 1 to the semiconductor substrate 4 are clamped from above, so that the holder 34 positioned on the upper side of the semiconductor device 1 is used. In addition, there is no possibility of interference between the plurality of clamps 32 and the lift pins 35 located on the bottom surface side of the semiconductor device 1 (glass support 2). Therefore, as shown in FIG. 4A, the number of clamps 32 on which the cooling element 33 is mounted can be increased. As a result, a higher cooling effect can be obtained. Moreover, the shape of the holder 34 can also be formed on a simple shape, for example, a disk.

  FIG. 5 is a schematic view showing the entire manufacturing apparatus for a semiconductor device according to an embodiment of the present invention, in particular, the entire sputtering apparatus including the portion shown in FIG.

  Referring to FIG. 5, the sputtering apparatus 40 includes a plurality of processing chambers 41 to 45 and a plurality of rod lock chambers 46 and 47. The plurality of processing chambers 41 to 45 and the plurality of rod lock chambers 46 and 47 are arranged around the transfer arm 31 shown in FIG. By driving the transfer arm 31, the clamped semiconductor device 1 is taken in and out of the plurality of processing chambers 41 to 45 and the plurality of rod lock chambers 46 and 47, and a predetermined process is executed in the order described below. .

  According to the present embodiment, since a plurality of clamps 32 each having a cooling element 33 mounted thereon are received, cooling in the fifth processing chamber 45 after sputtering can be omitted. The processing flow in that case is as follows.

  In the first load lock chamber 46, preheating is performed. In the fourth processing chamber 44, cooling is performed. RF etching is performed on the stage 41 a of the first processing chamber 41. In the fourth processing chamber 44, cooling is performed. Ti sputtering is performed on the stage 42 a of the second processing chamber 42. After sputtering, the semiconductor device 1 is simultaneously cooled while being transported by the multiple clamps 32 clamping the semiconductor device 1.

  On the stage 43a of the third processing chamber 43, Cu sputtering is performed. As a result, the Cu / Ti film 8 is formed at least on the side surfaces of the semiconductor device 1 or the glass support 2. After sputtering, the semiconductor device 1 is simultaneously cooled while being transported by the multiple clamps 32 clamping the semiconductor device 1. In the second load lock chamber 47, cooling is performed.

  Note that the cooling process before the sputtering process in the fourth process chamber 44 can be omitted because the cooling effect is small even if the metal film is cooled before the sputtering process.

  According to this embodiment, the cooling time in the fifth processing chamber 45 is reduced by the cooling shown in FIG. 4D, and the cooling time is shortened by about 4 minutes in total.

The effects of this embodiment that can be obtained in addition to the effects of the above-described embodiment will be exemplified below.
(3) Since the semiconductor device 1 or the semiconductor substrate 4 is clamped or adsorbed from above, the number of the clamps 32 provided with the cooling elements 33 can be increased without considering the lift pins 35. Or the outer periphery or the entire side periphery of the semiconductor substrate 4 can be cooled to highly prevent the adhesive 3 from being overheated.

  Note that, in the present application, where reference numerals are attached to the drawings, these are only for the purpose of helping understanding, and are not intended to be limited to the illustrated embodiments.

  Further, within the scope of the entire disclosure (including claims and drawings) of the present invention, the embodiments and examples can be changed and adjusted based on the basic technical concept. Various combinations or selections of various disclosed elements (including each element of each claim, each element of each embodiment or example, each element of each drawing, etc.) are included within the scope of the claims of the present invention. Is possible. That is, the present invention naturally includes various variations and modifications that could be made by those skilled in the art according to the entire disclosure including the claims and the drawings, and the technical idea.

DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Glass support body 3 Adhesive 4 Semiconductor substrate (wafer)
5 Intervening layer 6 Device layer 7 Backside silicon nitride film 8 Cu / Ti film (metal layer)
10 Semiconductor device manufacturing equipment (sputtering equipment)
11 Transport arm 12 Clamp (movable part)
13 Cooling element (Peltier element)
14 Holder 15 Lift pin 16 Electrical wiring 17 Stage 20 Sputtering apparatus 21-25 Multiple processing chambers 21a, 22a, 23a Stages 26, 27 Multiple rod lock chambers 30 Semiconductor device manufacturing apparatus (sputtering apparatus)
31 Transfer arm 32 Clamp (movable part)
33 Cooling element (Peltier element)
34 Holder 35 Lift pin 36 Electrical wiring 37 Stage 40 Sputtering apparatus 41-45 Multiple processing chambers 41a, 42a, 43a Stages 46, 47 Multiple rod lock chambers

Claims (15)

Attaching the semiconductor substrate to the glass support via an adhesive;
Forming a metal layer on the semiconductor substrate and the glass support;
A step of bringing a clamp provided with a cooling element into contact with the metal layer formed on the glass support, and cooling through the metal layer;
A method for manufacturing a semiconductor device, comprising:   The method of manufacturing a semiconductor device according to claim 1, wherein the film formation is performed by sputtering.   The method for manufacturing a semiconductor device according to claim 1, wherein the metal layer is formed on at least a side surface of the glass support.   4. The method of manufacturing a semiconductor device according to claim 3, wherein the clamp is brought into contact with the metal layer formed on the side surface of the glass support.   The method of manufacturing a semiconductor device according to claim 3, wherein the clamp clamps a side surface of the glass support from a bottom surface of the glass support.   Furthermore, the bottom surface of the said glass support body is cooled, The manufacturing method of the semiconductor device of Claim 5 characterized by the above-mentioned.   The method of manufacturing a semiconductor device according to claim 3, wherein the clamp clamps a side surface of the glass support from the semiconductor substrate.   The method for manufacturing a semiconductor device according to claim 1, wherein the cooling element is a Peltier element.   The method for manufacturing a semiconductor device according to claim 1, wherein the metal layer includes at least copper or titanium. Attaching the semiconductor substrate to the glass support via an adhesive;
After forming a metal layer on the semiconductor substrate and the glass support, a clamp having a cooling element is brought into direct or indirect contact with at least a side surface of the glass support, and the glass support is moved to the side surface side. Cooling from
A method for manufacturing a semiconductor device, comprising:   The method of manufacturing a semiconductor device according to claim 10, wherein the cooling element is a Peltier element. A semiconductor device manufacturing apparatus including a transfer arm for transferring a semiconductor device,
The apparatus for manufacturing a semiconductor device, wherein the transfer arm includes a plurality of clamps capable of clamping a side surface of the semiconductor device and having a cooling element.   The semiconductor device manufacturing apparatus according to claim 12, wherein the plurality of clamps are arranged on a peripheral portion of a holder facing a flat surface or a bottom surface of the semiconductor device.   The semiconductor device manufacturing apparatus according to claim 12, wherein the plurality of clamps clamp a side surface of the semiconductor device via a metal layer formed on the side surface of the semiconductor device.   13. The semiconductor device manufacturing apparatus according to claim 12, wherein the manufacturing apparatus is a sputtering apparatus.

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