JP2014033035A - Method for manufacturing optical devices, and cleaving apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture optical devices at a high yield.SOLUTION: A method for manufacturing optical devices comprises the steps of: laminating a plurality of semiconductor layers on a +z-side surface of a substrate for forming a chip forming substrate which integrally includes a plurality of laser chips arrayed in parallel and two-dimensionally on an XY plane; forming a plurality of grooves on a -z-side surface of the substrate; first-cleaving the chip forming substrate into a plurality of bar bodies each of which integrally includes a plurality of laser chips arrayed one-dimensionally in a longitudinal (X-axis) direction; and second-cleaving each of the plurality of bar bodies into a plurality of laser chips. In the second cleaving step, each of the plurality of bar bodies are divided into the plurality of laser chips when both ends, in the longitudinal direction, of a region of each bar body, including two adjacent laser chips, are supported from the +z side of the substrate, and a load is given to a second cleaving position, which is a border between the two adjacent laser chips, from the -Z side of the substrate.

Description

  The present invention relates to an optical device manufacturing method and a cleaving apparatus, and more particularly, to an optical device manufacturing method having a light emitting portion, and a cleaving apparatus for cleaving an optical device array including a plurality of optical devices. About.

  Conventionally, a plurality of semiconductor lasers having a light emitting portion are simultaneously formed on a single substrate, and are individually separated into a plurality of laser chips (optical devices) in a cleaving process.

  Patent Document 1 discloses a wafer opening method in which, in the opening process, one side part of a wafer (substrate) is sandwiched between two jigs and the other side part of the wafer is subjected to a load to open the wafer. .

  However, in the wafer cleaving method disclosed in Patent Document 1, since the jig hits the light emitting portion formed on one side portion of the wafer, the light emitting portion may be damaged, and an optical device can be manufactured with high yield. It was difficult.

  The present invention relates to a method of manufacturing an optical device having at least one light emitting unit, and includes an optical device integrally including a plurality of two-dimensionally arranged optical devices in which a plurality of semiconductor layers are stacked on one surface of a substrate. A step of forming an array, a step of forming a plurality of grooves on the other surface of the substrate, and a plurality of optical devices each integrally including a plurality of optical devices arranged one-dimensionally in the longitudinal direction. A primary cleaving step for dividing the plurality of bar-like bodies into a plurality of bar-like bodies, and a secondary cleaving step for dividing each of the plurality of bar-like bodies into a plurality of optical devices. In the state where both ends in the longitudinal direction in the region including the two adjacent optical devices of each of the states are supported from one side of the substrate, the second cleavable position is a boundary between the two adjacent optical devices. The other side of the board By the Luo load is applied, the plurality of bar-shaped bodies each is a manufacturing method of an optical device is divided into a plurality of optical devices.

  According to this, an optical device can be manufactured with a high yield.

It is a figure for demonstrating schematic structure of the laser printer which concerns on one Embodiment of this invention. It is the schematic which shows the optical scanning device in FIG. It is a figure for demonstrating a laser chip. It is a figure for demonstrating the arrangement | sequence of the several light emission part in a laser chip. It is a figure for demonstrating the structure of a light emission part. It is FIG. (1) for demonstrating the manufacturing method of a laser chip. It is FIG. (2) for demonstrating the manufacturing method of a laser chip. It is FIG. (3) for demonstrating the manufacturing method of a laser chip. It is FIG. (4) for demonstrating the manufacturing method of a laser chip. It is FIG. (5) for demonstrating the manufacturing method of a laser chip. It is FIG. (6) for demonstrating the manufacturing method of a laser chip. It is FIG. (1) for demonstrating the electrode pad in a laser chip. It is FIG. (2) for demonstrating the electrode pad in a laser chip. It is FIG. (7) for demonstrating the manufacturing method of a laser chip. It is FIG. (8) for demonstrating the manufacturing method of a laser chip. It is a figure for demonstrating a dicing film and a metal ring. It is a figure for demonstrating a scribe line. It is a figure for demonstrating a protection sheet. It is FIG. (1) for demonstrating a primary cleaving process. It is FIG. (2) for demonstrating a primary cleaving process. FIG. 21A and FIG. 21B are diagrams (No. 1 and No. 2) for explaining abnormal cleavage that may occur during secondary cleavage. It is a perspective view of the bar-shaped body containing a some laser chip. FIG. 23A is a diagram showing a stress distribution generated in the bar-like body at the time of secondary cleaving in the conventional example and this embodiment, and FIG. FIG. 23C is a perspective view of the bar-like body when the secondary clerk is opened according to the present embodiment. It is a perspective view of the bar-shaped body of the 1st modification. It is a perspective view of the bar-shaped body of the 2nd modification. It is a top view of the bar-shaped body of the 3rd modification. FIG. 27A is a view for explaining the cross-sectional shape of the cutter blade in the conventional cleaving device, and FIG. 27B is the cross-sectional shape of the cutter blade in the cleaving device of the fourth modified example. It is a figure for demonstrating the effect | action. It is a figure for demonstrating schematic structure of a color printer.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a schematic configuration of a laser printer 1000 as an image forming apparatus according to an embodiment.

  The laser printer 1000 includes an optical scanning device 1010, a photosensitive drum 1030, a charging device 1031, a developing roller 1032, a transfer charger 1033, a charge eliminating unit 1034, a cleaning unit 1035, a toner cartridge 1036, a paper feeding roller 1037, a paper feeding tray 1038, A registration roller pair 1039, a fixing roller 1041, a paper discharge roller 1042, a paper discharge tray 1043, a communication control device 1050, a printer control device 1060 that comprehensively controls the above-described units, and the like are provided. These are housed in predetermined positions in the printer housing 1044.

  The communication control device 1050 controls bidirectional communication with a host device (for example, a personal computer) via a network or the like.

  The printer control device 1060 includes a CPU, a ROM described in a program written in code readable by the CPU, various data used when executing the program, a RAM as a working memory, an analog data An AD conversion circuit for converting the signal into digital data. The printer control device 1060 controls each unit in response to a request from the host device, and sends image information from the host device to the optical scanning device 1010.

  The photosensitive drum 1030 is a cylindrical member, and a photosensitive layer is formed on the surface thereof. That is, the surface of the photoconductor drum 1030 is a scanned surface. The photosensitive drum 1030 rotates in the direction of the arrow in FIG.

The charging device 1031, the developing roller 1032, the transfer charger 1033, the charge removal unit 1034, and the cleaning unit 1035 are each disposed in the vicinity of the surface of the photosensitive drum 1030. The charging device 1031 → the developing roller 1032 → the transfer charger 1033 → the discharging unit 1034 → the cleaning unit 1035 are arranged in the order of rotation of the photosensitive drum 1030.
The charging device 1031 uniformly charges the surface of the photosensitive drum 1030.

  The optical scanning device 1010 scans the surface of the photosensitive drum 1030 charged by the charging device 1031 with a light beam modulated based on image information from the host device, and corresponds to the image information on the surface of the photosensitive drum 1030. A latent image is formed. The latent image formed here moves in the direction of the developing roller 1032 as the photosensitive drum 1030 rotates. The configuration of the optical scanning device 1010 will be described later.

  The toner cartridge 1036 stores toner, and the toner is supplied to the developing roller 1032.

  The developing roller 1032 causes the toner supplied from the toner cartridge 1036 to adhere to the latent image formed on the surface of the photosensitive drum 1030 to visualize the image information. Here, the toner-attached image (hereinafter also referred to as “toner image” for the sake of convenience) moves in the direction of the transfer charger 1033 as the photosensitive drum 1030 rotates.

  Recording paper 1040 is stored in the paper feed tray 1038. A paper feed roller 1037 is disposed in the vicinity of the paper feed tray 1038, and the paper feed roller 1037 takes out the recording paper 1040 one by one from the paper feed tray 1038 and conveys it to the registration roller pair 1039. The registration roller pair 1039 temporarily holds the recording paper 1040 taken out by the paper supply roller 1037, and in the gap between the photosensitive drum 1030 and the transfer charger 1033 according to the rotation of the photosensitive drum 1030. Send it out.

  A voltage having a polarity opposite to that of the toner is applied to the transfer charger 1033 in order to electrically attract the toner on the surface of the photosensitive drum 1030 to the recording paper 1040. With this voltage, the toner image on the surface of the photosensitive drum 1030 is transferred to the recording paper 1040. The recording sheet 1040 transferred here is sent to the fixing roller 1041.

  In the fixing roller 1041, heat and pressure are applied to the recording paper 1040, whereby the toner is fixed on the recording paper 1040. The recording paper 1040 fixed here is sent to the paper discharge tray 1043 via the paper discharge roller 1042 and is sequentially stacked on the paper discharge tray 1043.

The neutralization unit 1034 neutralizes the surface of the photosensitive drum 1030.
The cleaning unit 1035 removes the toner remaining on the surface of the photosensitive drum 1030 (residual toner). The surface of the photosensitive drum 1030 from which the residual toner is removed returns to the position facing the charging device 1031 again.

Next, the configuration of the optical scanning device 1010 will be described.
As shown in FIG. 2 as an example, the optical scanning device 1010 includes a light source 14, a coupling lens 15, an aperture plate 16, a cylindrical lens 17, a reflecting mirror 18, a polygon mirror 13, a first scanning lens 11a, and a second scanning. A lens 11b, a scanning control device (not shown), and the like are provided. These are assembled at predetermined positions of the optical housing 30.

  In the following, for convenience, the direction corresponding to the main scanning direction is abbreviated as “main scanning corresponding direction”, and the direction corresponding to the sub scanning direction is abbreviated as “sub scanning corresponding direction”.

The coupling lens 15 converts the light beam emitted from the light source 14 into substantially parallel light.
The aperture plate 16 has an aperture and defines the beam diameter of the light beam through the coupling lens 15.

  The cylindrical lens 17 forms an image of the light flux that has passed through the opening of the aperture plate 16 in the vicinity of the deflection reflection surface of the polygon mirror 13 via the reflection mirror 18 in the sub-scanning corresponding direction.

  The optical system arranged on the optical path between the light source 14 and the polygon mirror 13 is also called a pre-deflector optical system. In the present embodiment, the pre-deflector optical system includes a coupling lens 15, an aperture plate 16, a cylindrical lens 17, and a reflection mirror 18.

  The polygon mirror 13 is made of a regular hexagonal columnar member having a low height, and six deflecting reflection surfaces are formed on the side surface. The polygon mirror 13 deflects the light flux from the reflection mirror 18 while rotating at a constant speed around an axis parallel to the sub-scanning corresponding direction.

  The first scanning lens 11 a is disposed on the optical path of the light beam deflected by the polygon mirror 13.

  The second scanning lens 11b is disposed on the optical path of the light beam that passes through the first scanning lens 11a. Then, the light beam that has passed through the second scanning lens 11b is irradiated onto the surface of the photosensitive drum 1030 to form a light spot. This light spot moves in the longitudinal direction of the photosensitive drum 1030 as the polygon mirror 13 rotates. That is, the photoconductor drum 1030 is scanned. The moving direction of the light spot at this time is the “main scanning direction”. The rotation direction of the photosensitive drum 1030 is the “sub-scanning direction”.

  The optical system arranged on the optical path between the polygon mirror 13 and the photosensitive drum 1030 is also called a scanning optical system. In this embodiment, the scanning optical system includes a first scanning lens 11a and a second scanning lens 11b. Even if at least one folding mirror is disposed on at least one of the optical path between the first scanning lens 11 a and the second scanning lens 11 b and the optical path between the second scanning lens 11 b and the photosensitive drum 1030. good.

  As shown in FIG. 3 as an example, the light source 14 is provided around the 32 light emitting units 140 arranged in a two-dimensional manner, and around the 32 light emitting units 140, and 32 corresponding to each light emitting unit. The laser chip 100 (optical device) having the electrode pads 150 is included. Each electrode pad is electrically connected to the corresponding light emitting portion by a wiring member. There is a space of a predetermined size around the 32 electrode pads 150 in the laser chip 100.

  In this specification, the light emission direction from each light emitting unit is described as a Z-axis direction, and two directions orthogonal to each other in a plane orthogonal to the Z-axis direction are described as an X-axis direction and a Y-axis direction.

  As shown in FIG. 4, the 32 light emitting units 140 have the same interval between light emitting units (“d1” in FIG. 4) when all the light emitting units are orthogonally projected onto a virtual line extending in the X-axis direction. Is arranged. In this specification, the “light emitting portion interval” refers to the distance between the centers of two light emitting portions.

  Here, each light emitting unit is a vertical cavity surface emitting laser (VCSEL) having an oscillation wavelength of 780 nm band. That is, the laser chip 100 includes a surface emitting laser array having a plurality of surface emitting lasers (light emitting portions) arranged two-dimensionally.

  For example, as shown in FIG. 5, each light emitting unit includes a substrate 101, a buffer layer 102, a lower semiconductor DBR 103, a lower spacer layer 104, an active layer 105, an upper spacer layer 106, an upper semiconductor DBR 107, a contact layer 109, p A side electrode 113, an n-side electrode 114, and the like are included.

The substrate 101 is an n-GaAs single crystal substrate.
A plurality of grooves 300 extending in the Y-axis direction and spaced apart from each other in the X-axis direction are formed on the −Z side surface of the substrate 101.

  The buffer layer 102 is laminated on the + Z side surface of the substrate 101 and is a layer made of n-GaAs.

The lower semiconductor DBR 103 is stacked on the + Z side of the buffer layer 102 and 40.5 pairs of a low refractive index layer made of n-AlAs and a high refractive index layer made of n-Al _0.3 Ga _0.7 As. Have. Between each refractive index layer, in order to reduce an electrical resistance, a composition gradient layer having a thickness of 20 nm in which the composition is gradually changed from one composition to the other composition is provided. Each refractive index layer includes 1/2 of the adjacent composition gradient layer, and is set to have an optical thickness of λ / 4 when the oscillation wavelength is λ. When the optical thickness is λ / 4, the actual thickness D of the layer is D = λ / 4n (where n is the refractive index of the medium of the layer).

The lower spacer layer 104 is stacked on the + Z side of the lower semiconductor DBR 103 and is a layer made of non-doped (Al _0.1 Ga _0.9 ) _0.5 In _0.5 P.

  The active layer 105 is stacked on the + Z side of the lower spacer layer 104 and is an active layer having a triple quantum well structure having three quantum well layers and four barrier layers. Each quantum well layer is made of GaInAsP, which has a composition that induces 0.7% compressive strain, and has a band gap wavelength of about 780 nm. Each barrier layer is made of GaInP, which is a composition that induces a tensile strain of 0.6%.

The upper spacer layer 106 is laminated on the active layer 105 on the + Z side, and is a layer made of non-doped (Al _0.1 Ga _0.9 ) _0.5 In _0.5 P.

  A portion composed of the lower spacer layer 104, the active layer 105, and the upper spacer layer 106 is also called a resonator structure, and the thickness thereof is set to be an optical thickness of one wavelength. The active layer 105 is provided at the center of the resonator structure at a position corresponding to the antinode in the standing wave distribution of the electric field so that a high stimulated emission probability can be obtained. The resonator reflectivity is designed to be 99% or more.

The upper semiconductor DBR 107 is laminated on the + Z side of the upper spacer layer 106, and has a low refractive index layer made of p-Al _0.9 Ga _0.1 As and a high refractive index made of p-Al _0.3 Ga _0.7 As. It has 25 pairs of layers. Between each refractive index layer, in order to reduce electrical resistance, a composition gradient layer is provided in which the composition is gradually changed from one composition to the other composition. Each refractive index layer is set to have an optical thickness of λ / 4 including 1/2 of the adjacent composition gradient layer.

  In one of the low refractive index layers in the upper semiconductor DBR 107, a selectively oxidized layer 108 made of p-AlAs is inserted with a thickness of 33 nm.

  The insertion position of the selectively oxidized layer 108 is a position corresponding to the third node from the active layer 105 in the standing wave distribution of the electric field.

  The contact layer 109 is stacked on the + Z side of the upper semiconductor DBR 107 and is a layer made of p-GaAs.

  A metal wiring member that is insulated from the contact layer 109 by an interlayer insulating film 111 made of a SiN film and extends to the bonding pad is formed. The wiring member and the bonding pad are formed by ohmic material AuZn and Au as the wiring material by a lift-off method.

  Next, a method for manufacturing the laser chip 100 will be described. Note that a structure in which a plurality of semiconductor layers are stacked over the substrate 101 as described above is also referred to as a “stacked body” for convenience in the following.

(1) The above laminate is formed by crystal growth by metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) (see FIG. 6).

Here, in the case of the MOCVD method, trimethylaluminum (TMA), trimethylgallium (TMG), and trimethylindium (TMI) are used as the group III material, and phosphine (PH ₃ ) is used as the group V material. Arsine (AsH ₃ ) is used. Further, carbon tetrabromide (CBr ₄ ) is used as a p-type dopant material, and hydrogen selenide (H ₂ Se) is used as an n-type dopant material.

(2) A plurality of portions to be light emitting portions on the surface of the laminate are masked with square resist patterns each having a side of 25 μm. Further, the peripheral region in each laser chip is also masked with a resist pattern so as not to be etched.

(3) A mesa structure (hereinafter abbreviated as “mesa” for convenience) is formed by ECR etching using Cl ₂ gas using the resist pattern as a photomask. Here, the bottom surface of the etching is located in the lower spacer layer 104.

(4) The photomask is removed (see FIG. 7).

(5) The laminated body is heat-treated in water vapor. As a result, Al (aluminum) in the selectively oxidized layer 108 is selectively oxidized from the outer peripheral portion of the mesa, and an unoxidized region 108b surrounded by the Al oxide 108a remains in the central portion of the mesa. (See FIG. 8). In other words, a so-called oxidized constriction structure is formed that restricts the drive current path of the light emitting part only to the central part of the mesa. The non-oxidized region 108b is a current passage region (current injection region). In this way, for example, a substantially square current passing region having a width of about 4 μm is formed.

(6) An interlayer insulating film 111 made of SiN is formed by vapor phase chemical deposition (CVD) (see FIG. 9).

(7) An etching mask for opening a window for the p-side electrode contact is formed on the upper part of the mesa serving as a laser beam emission surface.

(8) The interlayer insulating film 111 is etched with BHF to open a window for the p-side electrode contact.

(9) The mask is removed (see FIG. 10).

(10) A square-shaped resist pattern having a side of 10 μm is formed in a region (emission region) serving as a light emitting portion on the top of the mesa, and p-side electrode material is deposited. As the electrode material on the p side, a multilayer film made of Cr / AuZn / Au or a multilayer film made of Ti / Pt / Au is used. At this time, the p-side electrode material is deposited on the electrode pad and the wiring member at the same time.

(11) The electrode material deposited in the region to be the light emitting part is lifted off to form the p-side electrode 113 (see FIG. 11). A region surrounded by the p-side electrode 113 is an emission region. At this time, the electrode pad 150 and the wiring member are also formed (see FIG. 12).

  As shown in FIG. 13 as an example, the electrode pad 150 has an uneven shape on the + X side when seen in a plan view. Therefore, the length of the side on the + X side of the electrode pad 150 is longer than the dimension d of the electrode pad 150 in the Y-axis direction. The electrode pad 150 has a thickness of about 1 μm.

(12) After polishing the back side (−Z side) of the substrate 101 to a predetermined thickness (for example, about 250 μm), the entire surface of the back surface (−Z side surface) of the substrate 101 is Y-axis using a scribe device. A plurality of grooves 300 extending in parallel with each other and spaced apart from each other in the X-axis direction are formed (see FIG. 14).

(13) An n-side electrode 114 is formed on the back surface of the substrate 101 (see FIG. 15). Here, the n-side electrode 114 is a multilayer film made of AuGe / Ni / Au.

(14) Ohmic conduction is established between the p-side electrode 113 and the n-side electrode 114 by annealing. As a result, the mesa becomes a light emitting portion, and a plurality of laser chips are formed on the substrate 101. Hereinafter, a structure in which a plurality of laser chips are formed on the substrate 101 is referred to as a “chip forming substrate 200” for convenience. In the chip formation substrate 200, the surface on the p-side electrode 113 side (+ Z side) is referred to as the front surface, and the surface on the n-side electrode 114 side (−Z side) is referred to as the back surface.

(15) A dicing film 210 is attached to the back surface of the chip forming substrate 200. The dicing film 210 is a vinyl chloride film having a thickness of 75 μm, and an acrylic pressure-sensitive adhesive is uniformly applied to a thickness of 10 μm on one surface thereof.

(16) A dicing film 210 is attached to a metal ring 212 having an outer diameter of 6 inches (see FIG. 16).

(17) A plurality of scribe lines parallel to the X axis and a plurality of scribe lines parallel to the Y axis are formed on the surface of the chip forming substrate 200 using a diamond pen in the gap between adjacent laser chips (see FIG. 17). . Here, the plurality of scribe lines parallel to the X axis are formed at a predetermined interval w in the Y axis direction, and the plurality of scribe lines parallel to the Y axis are formed at a predetermined interval w in the X axis direction. The predetermined interval w is called a separation pitch.

(18) A protective sheet 214 is attached to the surface of the chip forming substrate 200 (see FIG. 18). This protective sheet 214 is a PET film having a thickness of 25 μm. An antistatic agent is applied to the surface of the protective sheet 214 on the chip forming substrate 200 side, and silicone is further applied thereon as a release agent. If the antistatic agent is not applied, static electricity of 200 V or more is generated, and the laser chip may be electrostatically broken. In addition, since the protective sheet 214 has no adhesiveness, the protective sheet 214 is attached to the adhesive surface of the dicing film 210 and fixed.

  Here, a plurality of laser chips on the −Y side of one scribe line parallel to the X axis to be cleaved are combined as chip group A, and + Y side of one scribe line parallel to the X axis to be cleaved. A plurality of laser chips are collectively referred to as a chip group B (see FIG. 19).

(19) The chip forming substrate 200 is placed on the receiving blade 220 having a groove with a width L narrower than twice the separation pitch w, and one scribe line parallel to the X axis to be cleaved is at the center of the groove of the receiving blade 220. Place it so that it is positioned. The width L of the groove of the receiving blade 220 is set to a size such that the plurality of surface emitting laser arrays of the chip group A and the chip group B are located in the groove of the receiving blade 220 when viewed from the + Z direction.

(20) From the −Z side of one scribe line parallel to the X axis to be cleaved, for example, a ceramic cutter blade 230 is pressed (see FIG. 20).

(21) The cutter blade 230 is pushed in a predetermined amount to open the chip forming substrate 200. This cleavage is also called primary cleavage. As a result, the chip group A and the chip group B are separated. For example, the length of the cutter blade 230 in the X-axis direction is set to be approximately the same as the length of the chip forming substrate 200 in the X-axis direction.

(22) Similarly, other scribe lines parallel to the X axis are also cleaved (primary cleaved), and a plurality of chip formation substrates 200 are arranged in a line in the longitudinal direction (X axis direction). The laser chip 100 is divided into a plurality of bar-shaped bodies (strip-shaped bodies) each included (see FIG. 21B). In FIG. 21B, the surface emitting laser array is not shown.

(23) Next, similarly to the primary cleavage, cleaving is performed on each scribe line parallel to the Y axis of each bar-shaped body, and the bar-shaped body is divided into a plurality of laser chips 100. . This cleavage is also called secondary cleavage.

  Hereinafter, secondary cleaving will be briefly described. The laser chip on the −X side of one scribe line parallel to the Y axis to be cleaved is referred to as chip A, and the laser chip on the + X side of one scribe line parallel to the Y axis to be cleaved is referred to as chip B. To do. The figure corresponding to FIG. 19 and FIG. 20 at the time of secondary cleaving at the time of secondary cleaving is that in FIG. 19 and FIG. 20, the X axis and the Y axis are interchanged, and the chip forming substrate 200 is replaced with a bar-shaped body. The chip group A is replaced with the chip A, and the chip group B is replaced with the chip B.

  First, the bar-shaped body is placed on a receiving blade having a groove whose width is narrower than twice the separation pitch w so that one scribe line parallel to the Y axis to be cleaved is positioned at the center of the groove of the receiving blade. To do. The width of the groove of the receiving blade is set to a size such that the plurality of surface emitting laser arrays of the chip A and the chip B are located in the groove of the receiving blade as viewed from the + Z direction.

  Next, a blade of a ceramic cutter, for example, is pressed from the −Z side of one scribe line parallel to the Y axis to be cleaved.

  Next, the cutter blade is pushed in a predetermined amount to open the bar-shaped body. As a result, chip A and chip B are separated. At the time of secondary cleaving, the length of the cutter blade in the Y-axis direction is set to be approximately the same as the length of the bar-shaped body in the Y-axis direction (the width of the secondary cleaving surface of the laser chip). You may do it.

(24) Remove the protective sheet 214.

(25) Using the dilator warmed to about 50 ° C., the dicing film 210 is stretched uniformly in all directions of 360 degrees. As a result, the plurality of laser chips are separated from each other.

(26) A plurality of laser chips are individually peeled off from the dicing film 210.

  Then, the laser chip 100 is obtained through several subsequent processes.

  Here, the cleaving mechanism will be briefly described. When a load is applied by pushing the blade of the cutter from the back side into the middle part of the substrate with both ends of the substrate supported from the front side, the substrate is deformed, and tensile stress is generated on the front side portion of the substrate. Compressive stress is generated on the back side portion (see FIG. 21A). These stresses are concentrated on the scribe line. Furthermore, when the cutter blade is pushed in and the tensile stress of the scribe line becomes close to the tensile strength of the substrate, a crack occurs at the bottom of the scribe line. The generated crack further concentrates the tensile stress, so that cleaving progresses at an accelerated rate, and as a result, the substrate breaks.

  As described above, in this embodiment, in order to divide the chip forming substrate 200 into the plurality of laser chips 100, the cleaving method is adopted.

  The open method requires no drying process because it does not use water, eliminates the need for wastewater treatment of the dicing saw, eliminates the need for a cutting area, and provides the highest substrate utilization efficiency. There are advantages such as not adhering to the light emitting portion of the laser array. That is, the cleaving method is a method capable of efficiently separating a multi-channel surface emitting laser array with high quality.

  Therefore, the inventor has been developing in order to advance the opening method. In the process of developing the cleaving method, in particular, when the chip thickness is 250 μm or more and the chip dimension is 900 μm or less, in the cleaving process, other than the scribe line, that is, the regular It has been found that there are frequent defects that cause cleaving at positions other than the cleaving position (hereinafter referred to as abnormal cleaving).

  Furthermore, as a result of detailed investigations, the inventor has found that this abnormal cleavage is not a primary cleavage step in which the chip forming substrate is divided into a plurality of bar-shaped bodies, but a secondary in which the bar-shaped body is divided into a plurality of laser chips. It has been found that the location where the cleaving process has occurred and that the abnormal cleaving has occurred is not just where the cutter blade is applying a load, but just above the receiving blade in the unscratched area. It was.

  Therefore, in the cleaving process, as shown in FIG. 21A, the cutter blade supports both ends in the X-axis direction of the predetermined area including the two adjacent laser chips of the bar-shaped body with the receiving blade. In this state, when the secondary hex opening position, which is the boundary between the two adjacent laser chips (point p in FIG. 21), is bent from the −Z side and bent into a concave shape, the predetermined region of the bar-shaped body The unopened portion (point q in FIG. 21) located at the + X side end of the plate is deformed convexly to the −Z side because the drag from the dicing film acts with the receiving blade as a fulcrum. In this case, a tensile stress acts on the −Z side portion of the unopened portion, and a compressive stress acts on the + Z side portion (see the inside of the ellipse frame in FIG. 21A). Note that an enlarged view of the q-point cross section is shown in the elliptical frame of FIG.

  Furthermore, the stress at the point q increases as the cutter blade is overdriven. In such a state, if there is a factor such as a flaw in which stress concentrates at the q point, cleaving easily occurs.

In order to reduce this abnormal cleaving, for example, measures such as reducing the cleaving load and preventing stress from concentrating on the q point of the substrate directly above the receiving blade can be considered.
Therefore, in order to better understand the mechanism of abnormal cleavage, the load required for cleavage was estimated.

  The cleaving process is considered to be the central concentrated load of the simple support beams at both ends. Assuming that the cross section of the substrate to which the load P is applied is a rectangle, the deflection d at the time of opening is expressed by the following equation (1).

ここで、ｄは撓み、Ｌは支点間距離（受け刃間隔）、Ｅはヤング率、Ｉは断面二次メントである。

Here, d is the deflection, L is the distance between the fulcrums (receiving blade spacing), E is the Young's modulus, and I is the secondary cross-section.

  The cross-sectional secondary moment I is expressed by the following equation (2).

ここで、ｂは断面幅、ｈは厚さである。

Here, b is a cross-sectional width and h is a thickness.

  Further, the breaking load Pmax when the substrate breaks is given by the following equation (3) using the maximum stress (bending stress) σ of the material.

ここで、Ｚは断面係数と呼ばれる。

Here, Z is called a section modulus.

  In the case of a square chip, since 2b≈L, the breaking load Pmax in secondary cleaving can be expressed by the following equation (4).

上記（４）式に示されるように、正方形チップの場合には、破壊荷重Ｐｍａｘは、厚さｈの２乗に比例するので、異常ヘキ開を減らすには、厚さを薄くすることが最も効果的である。

As shown in the above equation (4), in the case of a square chip, the breaking load Pmax is proportional to the square of the thickness h. Therefore, in order to reduce abnormal cleaving, it is most preferable to reduce the thickness. It is effective.

  From the above equation (4), the breaking load at the secondary cleavage is calculated. In the case of a square chip with a substrate thickness of 250 μm, assuming that the tensile strength of GaAs is 138 MPa, the breaking load Pmax leading to cleaving is estimated to be 293 g. At this time, a force of about 150 g, which is 1/2 of the breaking load, acts on the point q where the abnormal cleaving occurs.

  As can be seen from the trial calculation results, the secondary cleaving can be cleaved with a load as small as several hundred grams. In this case, it is presumed that abnormal cleaving is likely to occur.

  FIG. 22 is a perspective view of a bar-like body (here, for three chips for convenience) formed by dividing the chip formation substrate 200 by primary cleavage. In FIG. 22, the broken line on the side surface on the −Y side of the bar-shaped body indicates the secondary opening position.

  As described above, the plurality of grooves 300 are formed on the back surface (the surface on the −Z side) of the substrate 101 by a scribing method so as to be parallel to the Y axis, that is, parallel to the secondary cleavage surface. . As can be seen from the partially enlarged sectional view of FIG. 22, in this embodiment, after forming a plurality of grooves 300 as scribe marks on the back surface of the substrate 101, the n-side electrode 114 is formed over the entire back surface of the substrate 101. .

  Here, the scribing method is a method in which a blade such as diamond is pressed against the substrate surface and scratched to make a ruled line, and in order to perform primary and secondary cleaving in the manufacture of an edge emitting semiconductor laser. In addition, it is a method commonly used.

  In this embodiment, as an example, scribing is performed with a load of 10 g to form a good scribe mark.

  Next, the operation of the plurality of grooves 300 formed on the back surface of the substrate 101 will be described with reference to FIGS. 23 (A) to 23 (C).

  When the bar-like body formed by separating the chip forming substrate by the primary cleavage is subjected to the secondary cleavage, as described above, the non-open portion (point q in FIG. 21) of the bar-like body includes the + Z side portion. Compressive stress is generated, and tensile stress is generated in the −Z side portion.

  FIG. 23A shows the distribution of tensile stress in the vicinity of the unopened portion (point q in FIG. 21) in the bar-like body during secondary opening. In FIG. 23A, the thin solid line indicates the distribution of the tensile stress of the conventional example, and the thick solid line indicates the distribution of the tensile stress of the present embodiment. FIG. 23B is a perspective view showing a bar-like body at the time of secondary hex opening in a conventional example. FIG. 23B shows a perspective view of the bar-like body when the secondary clerk is opened in the present embodiment.

  As shown in FIG. 23A, in the bar-shaped body of the conventional example, the distribution of the tensile stress is one peak having a peak at the center, and exceeds the threshold at which abnormal cleaving occurs near the center. In this case, abnormal cleaving occurs.

  On the other hand, in the bar-shaped body in which the plurality of grooves 300 according to the present embodiment are formed, the tensile stress distribution of the bar-shaped body has a plurality of adjacent peaks in the X-axis direction, each having a peak less than a threshold value at which abnormal cleavage occurs. Become a mountain. That is, in this embodiment, the tensile stress generated in the bar-like body can be dispersed by the plurality of grooves 300.

  As described above, in the method for manufacturing the laser chip 100 according to the present embodiment, a plurality of semiconductor layers are stacked on the surface of the substrate 101 on the + Z side, and the plurality of laser chips 100 arranged two-dimensionally in parallel to the XY plane are arranged. A step of forming the chip forming substrate 200 that is integrally included, a step of forming a plurality of grooves 300 on the −Z side surface of the substrate 101, and the chip forming substrate 200 are arranged one-dimensionally in the longitudinal direction (X-axis direction). A primary cleaving step for dividing the plurality of laser chips 100 into a plurality of bar-like bodies each including the laser chip 100, and a secondary cleaving step for dividing the plurality of bar-like bodies into a plurality of laser chips 100, respectively. Contains. In the secondary cleaving step, the two adjacent lasers in a state where both ends in the longitudinal direction of each of the plurality of bar-shaped bodies including the two adjacent laser chips 100 are supported from the + Z side of the substrate 101. Each of the plurality of bar-shaped bodies is divided into a plurality of laser chips 100 by applying a load from the −Z side of the substrate 101 to the secondary opening position that is the boundary of the chip 100.

  In this case, it is possible to disperse the tensile stress generated in the bar-shaped body at the time of secondary cleaving by the plurality of grooves 300, and thus it is possible to prevent the abnormal cleaving from occurring in the bar-shaped body.

  As a result, in the method for manufacturing the laser chip 100 according to this embodiment, the laser chip 100 can be manufactured with a high yield. That is, the unit price of the laser chip 100 can be lowered.

  Further, for example, a receiving blade does not hit the surface emitting laser array of the laser chip 100 at the time of primary cleaving and secondary cleaving, so that the surface emitting laser array is prevented from being damaged. As a result, the yield of the laser chip 100 can be further improved.

  In the optical scanning device 1010, since the light source 14 includes the laser chip 100, the cost can be reduced.

  Since the laser printer 1000 includes the optical scanning device 1010, the cost can be reduced as a result.

  In the above embodiment, the plurality of grooves 300 formed on the back surface of the substrate are formed to be parallel to the Y axis, that is, to be parallel to the secondary cleaved surface. As in the first modification shown in FIG. 24, the plurality of grooves 400 may be formed so as to be non-parallel to the Y axis, that is, to be non-parallel to the secondary cleaved surface.

  According to the first modification, since the tensile stress generated in the bar-like body is dispersed and the stress distribution can be inclined in the plane, it is difficult to cause abnormal cleavage. As can be seen from the partially enlarged cross-sectional view of FIG. 24, n-side electrodes are formed on the −Z side of the plurality of grooves 400. The groove 400 can be formed by the same scribing method as in the above embodiment.

  Further, in the above embodiment, the plurality of grooves 300 are formed in the entire back surface of the substrate. However, the present invention is not limited to this, and for example, a plurality of bars on the back surface of the substrate as in the second modified example shown in FIG. A plurality of grooves 500 for stress distribution are formed in the secondary hex only in the vicinity of the secondary cleaving position of each shape, that is, only in a region where a large tensile stress is generated during the secondary cleaving (see FIG. 23A). It is good also as forming so that it may become parallel or non-parallel to an open surface. And it is good also as forming the n side electrode 216 only in the area | regions other than the secondary cleaving position vicinity of a bar-like body (refer the partial expanded sectional view of FIG. 25).

  In this case, after forming the plurality of grooves 500 in the vicinity of the secondary cleavage position on the back surface of the substrate, the n-side electrode 216 may be formed in a region other than the vicinity of the secondary cleavage position. After forming the n-side electrode 216 in a region other than the vicinity of the secondary hex opening position, a plurality of grooves 500 may be formed in the vicinity of the secondary hex opening position.

  According to the second modification, since the plurality of grooves 500 are formed on a part of the back surface of the substrate, the time for forming the plurality of grooves 500 can be shortened.

  Moreover, in the said embodiment, although the separation pitch (w) of primary and secondary cleaving is made equal, it is not restricted to this. For example, as in the third modification shown in FIG. 26, the separation pitch b2 for secondary cleaving (the width b2 of the secondary cleaving surface) is set to the separation pitch b1 for primary cleaving (the width b1 of the primary cleaving surface). ) May be shorter.

  In this case, the opening load at the time of secondary opening can be reduced, and as a result, abnormal opening can be reduced.

  From the above equation (4), the following equation (5) is obtained.

たとえば、二次ヘキ開面幅ｂ２/一次ヘキ開面幅ｂ１＝０．８にした場合、上記（５）式から正方形チップの場合の０．８倍の荷重に低減できる。基板の裏面に複数の溝を形成すれば、さらに異常ヘキ開を低減できることは言うまでもない。

For example, when the secondary cleaved surface width b2 / primary cleaved surface width b1 = 0.8, the load can be reduced to 0.8 times that in the case of a square chip from the above equation (5). It goes without saying that abnormal cleaving can be further reduced by forming a plurality of grooves on the back surface of the substrate.

  Moreover, in the conventional cleaving apparatus used also in the above embodiment, the XZ cross-sectional shape of the tip of the cutter blade, that is, the cross-sectional shape parallel to both the normal direction (Z-axis direction) and the X-axis direction of the substrate The two sides sandwiching the apex that contacts the bar-like body at the secondary cleaving position are inclined to the −X side and the + X side with respect to a virtual plane perpendicular to the X axis including the cleaving position of the bar-like body, respectively. Although it has a triangular shape (see FIG. 27A), instead of this, for example, the XZ at the tip of the cutter blade as in the cleaving device of the fourth modified example shown in FIG. 27B. As for the cross-sectional shape, one of the two sides sandwiching the apex that contacts the bar-like body at the secondary opening position is inclined to the −X side with respect to the virtual plane, and the other is positioned on the virtual plane. The triangular plane may be inclined to the −X side with respect to the virtual plane (FIG. 27B Reference).

  As shown in FIG. 27B, the angle α of the surface of the cutter blade on the non-open side with respect to the XY plane is 90 ° or more (for example, 90 °) and the surface of the cutter blade on the open side is XY. The angle β with respect to the plane is preferably 45 ° to 70 °. That is, it is preferable that the angle γ formed by the surface of the cutter blade on the non-open side and the surface on the open side is 45 ° or less.

  In this case, the angle α is set to 90 °, for example, and the two laser chips adjacent to each other in a state where the both ends of the bar-shaped body including the two adjacent laser chips in the X-axis direction are supported by the blades. When a load is applied to the boundary (secondary opening position) from the -Z side, the center of the predetermined area of the bar-shaped body is bent until the opening of the opening (broken line), but the substrate is not opened immediately after opening the opening. Since the area is not pressed by the cutter blade, the area returns to the initial state (solid line). As a result, it is possible to eliminate the pushing-in of the substrate due to the overdrive of the cutter blade, which is a cause of the abnormal opening, and to reduce the abnormal opening. The opening device includes a cutter and at least one receiving blade.

  The cleaver of the fourth modification may be used not only when the secondary clerk is opened but also when the primary clerk is opened.

  Moreover, in the said embodiment and each modification, although the some groove | channel formed in a board | substrate is made into linear form, it is good also as curved form, for example.

  Further, in the above embodiment and the first modification, a plurality of grooves are formed in the entire back surface of the substrate. However, the present invention is not limited to this, and in short, a plurality of grooves are formed in at least a part of the back surface of the substrate. It should be. In this case, it is preferable that the plurality of grooves are formed at least in the vicinity of the secondary opening position of the bar-shaped body.

  Moreover, in the said embodiment and each modification, the number of the groove | channels formed in a board | substrate, a space | interval, a magnitude | size, a depth, and a shape can be changed suitably.

  Moreover, in the said embodiment, the 1st and 2nd modification, although the XZ cross-sectional shape of the groove | channel formed in a board | substrate is made into substantially V shape, let it be other shapes, such as substantially U shape, for example. May be.

  Further, in the above embodiment and each modified example, a plurality of grooves are formed on the back surface of the substrate after laminating a plurality of semiconductor layers on the surface of the substrate, but after forming a plurality of grooves on the back surface of the substrate, A plurality of semiconductor layers may be stacked on the surface of the substrate, or a plurality of semiconductor layers may be stacked on the surface of the substrate and a plurality of grooves may be formed on the back surface of the substrate in parallel. .

  Moreover, in the said embodiment and each modification, although the laser chip containing a surface emitting laser array is employ | adopted as an optical device, it is not restricted to this, For example, a surface emitting laser, an end surface emitting laser, a some end surface emitting laser You may employ | adopt the chip | tip containing either of the edge-emitting laser arrays containing.

  In addition, although the said embodiment and each modification demonstrated the case where a surface emitting laser array had 32 light emission parts, it is not limited to this. For example, the surface emitting laser array may have 40 light emitting units.

  Moreover, although the said embodiment and each modification demonstrated the case where the oscillation wavelength of a light emission part was a 780 nm band, it is not limited to this. The oscillation wavelength of the light emitting unit may be changed according to the characteristics of the photoreceptor.

  The surface emitting laser array can be used for applications other than the image forming apparatus. In that case, the oscillation wavelength may be a wavelength band such as a 650 nm band, an 850 nm band, a 980 nm band, a 1.3 μm band, and a 1.5 μm band depending on the application. In this case, a mixed crystal semiconductor material corresponding to the oscillation wavelength can be used as the semiconductor material constituting the active layer. For example, an AlGaInP mixed crystal semiconductor material can be used in the 650 nm band, an InGaAs mixed crystal semiconductor material can be used in the 980 nm band, and a GaInNAs (Sb) mixed crystal semiconductor material can be used in the 1.3 μm band and the 1.5 μm band.

  In the above-described embodiment and each modified example, the case of the laser printer 1000 as the image forming apparatus has been described. However, the present invention is not limited to this.

  For example, an image forming apparatus that directly irradiates laser light onto a medium (for example, paper) that develops color with laser light may be used.

  For example, the medium may be a printing plate known as CTP (Computer to Plate). That is, the optical scanning device 1010 is also suitable for an image forming apparatus that forms a printing plate by directly forming an image on a printing plate material by laser ablation.

  For example, the medium may be so-called rewritable paper. For example, a material described below is applied as a recording layer on a support such as paper or a resin film. Then, reversibility is imparted to color development by thermal energy control by laser light, and display / erasure is performed reversibly.

  There are a transparent cloudy type rewritable marking method and a color developing / erasing type rewritable marking method using a leuco dye, both of which can be applied.

  The transparent cloudy type is a polymer thin film in which fine particles of fatty acid are dispersed. When heated to 110 ° C. or higher, the resin expands due to melting of the fatty acid. Thereafter, when cooled, the fatty acid becomes supercooled and remains in a liquid state, and the expanded resin solidifies. Thereafter, the fatty acid solidifies and shrinks to become polycrystalline fine particles, and voids are formed between the resin and the fine particles. Light is scattered by this gap and appears white. Next, when heated to an erasing temperature range of 80 ° C. to 110 ° C., the fatty acid partially melts, and the resin thermally expands to fill the voids. If it cools in this state, it will be in a transparent state and an image will be erased.

  The rewritable marking method using a leuco dye utilizes a reversible color development and decoloration reaction between a colorless leuco dye and a developer / decolorant having a long-chain alkyl group. When heated by laser light, the leuco dye and the developer / decolorant react to develop color, and when rapidly cooled, the colored state is maintained. Then, when it is slowly cooled after heating, phase separation occurs due to the self-aggregating action of the long-chain alkyl group of the developer / decolorant, and the leuco dye and developer / decolorizer are physically separated and decolored.

  In addition, when the medium is exposed to ultraviolet light, it develops in C (cyan) and is decolored by visible R (red) light, and when exposed to ultraviolet light, it develops in M (magenta). A photochromic compound that is decolored by G (green) light, a photochromic compound that develops color when exposed to ultraviolet light (Y) and is decolored by visible B (blue) light. So-called color rewritable paper provided on the body may be used.

  This is a method of expressing full color by controlling the color density of the three types of materials that develop color in Y, M, and C by the time and intensity of applying R, G, and B light once it is made black by applying ultraviolet light. However, if the strong light of R, G, and B is continuously applied, all three types can be decolored to become pure white.

  A device that imparts reversibility to color development by such light energy control can also be realized as an image forming apparatus including an optical scanning device similar to that of the above embodiment.

  Further, an image forming apparatus using a silver salt film as the image carrier may be used. In this case, a latent image is formed on the silver salt film by optical scanning, and this latent image can be visualized by a process equivalent to a developing process in a normal silver salt photographic process. Then, it can be transferred to photographic paper by a process equivalent to a printing process in a normal silver salt photographic process. Such an image forming apparatus can be implemented as an optical plate making apparatus or an optical drawing apparatus that draws a CT scan image or the like.

  As an example, as shown in FIG. 28, a color printer 2000 including a plurality of photosensitive drums may be used.

  The color printer 2000 is a tandem multicolor printer that forms a full-color image by superimposing four colors (black, cyan, magenta, and yellow), and is a black station (photosensitive drum K1, charging device K2). , Developing device K4, cleaning unit K5, and transfer device K6), cyan station (photosensitive drum C1, charging device C2, developing device C4, cleaning unit C5, and transfer device C6), and magenta station ( The photosensitive drum M1, the charging device M2, the developing device M4, the cleaning unit M5, and the transfer device M6), and the yellow station (the photosensitive drum Y1, the charging device Y2, the developing device Y4, the cleaning unit Y5, and the transfer device Y6). ), Optical scanning device 2010, and transfer belt 2 80, and a fixing unit 2030.

  Each photosensitive drum rotates in the direction of the arrow in FIG. 28, and a charging device, a developing device, a transfer device, and a cleaning unit are arranged around each photosensitive drum along the rotation direction. Each charging device uniformly charges the surface of the corresponding photosensitive drum. The surface of each photoconductive drum charged by the charging device is irradiated with light by the optical scanning device 2010, and a latent image is formed on each photoconductive drum. Then, a toner image is formed on the surface of each photosensitive drum by a corresponding developing device. Further, the toner image of each color is transferred onto the recording paper on the transfer belt 2080 by the corresponding transfer device, and finally the image is fixed on the recording paper by the fixing unit 2030.

  The optical scanning device 2010 has a light source including a laser chip manufactured in the same manner as the laser chip 100 for each color. Therefore, the same effect as that of the optical scanning device 1010 can be obtained. In addition, since the color printer 2000 includes the optical scanning device 2010, the same effect as the laser printer 1000 can be obtained.

  By the way, in the color printer 2000, color misregistration may occur due to manufacturing error or position error of each component. Even in such a case, color misregistration can be reduced by selecting a light emitting unit to be lit.

  DESCRIPTION OF SYMBOLS 100 ... Laser chip (optical device) 101 ... Substrate, 102 ... Buffer layer, 103 ... Lower semiconductor DBR, 104 ... Lower spacer layer, 105 ... Active layer, 106 ... Upper spacer layer, 107 ... Upper semiconductor DBR, 109 ... Contact Layer 113, p-side electrode, 114, n-side electrode, 140, light emitting portion (surface emitting laser), 200, chip forming substrate (optical device array), 1000, laser printer (image forming apparatus), 1010, optical scanning device DESCRIPTION OF SYMBOLS 1030 ... Photosensitive drum (image carrier), 2000 ... Color printer (image forming apparatus), 2010 ... Optical scanning device, K1, C1, M1, Y1 ... Photosensitive drum (image carrier).

JP 2005-317761 A

Claims (9)

A method of manufacturing an optical device having at least one light emitting unit,
A step of laminating a plurality of semiconductor layers on one surface of the substrate to produce an optical device array integrally including a plurality of two-dimensionally arranged optical devices;
Forming a plurality of grooves on the other surface of the substrate;
A primary cleaving step of dividing the optical device array into a plurality of bar-like bodies each integrally including a plurality of optical devices arranged one-dimensionally in the longitudinal direction;
A secondary cleaving step for dividing each of the plurality of bar-like bodies into a plurality of optical devices,
In the secondary cleaving step, the two adjacent light beams in a state where both ends in the longitudinal direction of each of the plurality of bar-shaped bodies including the two adjacent optical devices are supported from one side of the substrate. An optical device manufacturing method in which each of the plurality of bar-shaped bodies is divided into a plurality of optical devices by applying a load from the other side of the substrate to a secondary opening position that is a device boundary.   2. The method of manufacturing an optical device according to claim 1, wherein the light emitting portions are not formed at both ends in the longitudinal direction in a region including the two adjacent optical devices.   The plurality of grooves are formed on at least a part of the other surface of the substrate so as to be parallel to a secondary cleaved surface of each of the plurality of optical devices. The manufacturing method of the optical device of description.   The plurality of grooves are formed on at least a part of a surface on the other side of the substrate so as to be non-parallel to a secondary cleaved surface of each of the plurality of optical devices. The manufacturing method of the optical device of 2.   The plurality of grooves are formed only in the vicinity of the secondary opening position of each of the plurality of bar-like bodies on the other surface of the substrate. The manufacturing method of the optical device of description.   6. The light according to claim 1, wherein the secondary cleaved surface of each of the plurality of chip-like portions has a shorter width in the direction parallel to the substrate than the primary cleaved surface. Device manufacturing method.   The method of manufacturing an optical device according to claim 1, wherein the at least one light emitting unit is at least one surface emitting laser. A cleaving apparatus for cleaving an optical device array including a plurality of optical devices arranged along a predetermined two-dimensional plane,
At least one receiving blade that supports both sides sandwiching in the uniaxial direction one cleaved position in a uniaxial direction parallel to the two-dimensional plane of the optical device array;
A cutter for applying a load from the opposite side of the at least one receiving blade to the one open position,
The shape of the cross section of the tip of the cutter blade parallel to both the normal direction of the two-dimensional plane and the uniaxial direction is the two sides sandwiching the apex that contacts the optical device array at the open position. , One is inclined to one side with respect to a virtual plane perpendicular to the uniaxial direction including the open position, and the other is positioned on the virtual plane or inclined to one side with respect to the virtual plane Opening device that is triangular.   The cleaver according to claim 8, wherein the two sides sandwiching the apex form an angle of 45 ° or less.

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