JP2014029005A - Film deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress evaporation of impurities contained in a vapor deposition material.SOLUTION: A gas flow deposition apparatus 10 includes a processing container 11, a material container 13, a transporting pipe 15, and a conductance adjusting unit 21. The processing container 11 defines a processing chamber 12 for housing a substrate S to be processed. The material container 13 stores therein the vapor deposition material to be deposited on the substrate S and discharges a gas that contains a vapor of the vapor deposition material from a discharge port 14. The transporting pipe 15 extends from the discharge port 14 of the material container 13 toward the inside of the processing chamber 12 and transports the gas which contains the vapor of the deposition material and is discharged from the discharge port 14 to the inside of the processing chamber 12. The conductance adjusting unit 21 is provided in the transporting pipe 15 and adjusts the conductance of the transporting pipe 15 so that the pressure of the material container 13 is at a predetermined value or higher.

Description

  Various aspects and embodiments of the present invention relate to a film forming apparatus.

  In recent years, an organic EL display using an organic EL (Electro-Luminescence) element has attracted attention. An organic EL element used for an organic EL display has features such as self-emission, fast reaction speed, and low power consumption, and therefore does not require a backlight. For example, a display unit of a portable device Application to such as is expected.

  A film forming apparatus called a gas flow vapor deposition apparatus may be used for forming an organic EL element. The gas flow vapor deposition apparatus includes a material container that accommodates a vapor deposition material (for example, an organic material such as an organic EL element) to be formed on a substrate and flows vapor of the vapor deposition material together with a carrier gas from an outlet. In addition, the gas flow vapor deposition apparatus extends from the outlet of the material container toward the inside of the storage chamber that accommodates the substrate, and includes a gas containing vapor of the vapor deposition material flowing out from the outlet of the material container (hereinafter referred to as “deposition material” It is provided with a transport pipe for transporting gas).

  By the way, in the gas flow vapor deposition apparatus, in order to uniformly inject the vapor deposition material gas transported through the transport pipe toward the substrate, a nozzle is attached to the exit of the transport pipe extending into the interior of the storage chamber. It has been known. For example, Patent Document 1 discloses a gas flow vapor deposition apparatus in which a nozzle having a slit extending in a direction orthogonal to a substrate transport direction is attached to an outlet of a transport pipe extending into a storage chamber.

JP 2008-38225 A

  However, the prior art does not consider the suppression of evaporation of impurities in the vapor deposition material. That is, in the prior art, although the pressure of the material container communicating with the inlet side of the transport pipe is slightly increased by the nozzle attached to the outlet of the transport pipe, the pressure of the material container after the slight increase is maintained relatively low. A large amount of impurities may evaporate from the vapor deposition material inside the material container.

  A film forming apparatus according to one aspect of the present invention includes a processing container, a material container, a transport pipe, and a conductance adjusting unit. The processing container defines a processing chamber that accommodates a substrate to be processed. The material container accommodates therein a vapor deposition material to be deposited on the substrate, and allows a gas containing vapor of the vapor deposition material to flow out from the outlet. The transport pipe extends from the outlet of the material container toward the inside of the processing chamber, and transports a gas containing vapor of the vapor deposition material flowing out from the outlet to the inside of the processing chamber. The conductance adjusting unit is provided in the transport pipe, and adjusts the conductance of the transport pipe so that the pressure of the material container becomes a predetermined value or more.

  According to various aspects and embodiments of the present invention, a film forming apparatus that suppresses evaporation of impurities in a vapor deposition material is realized.

FIG. 1 is a diagram schematically illustrating a gas flow vapor deposition apparatus according to an embodiment. FIG. 2A is a longitudinal sectional view showing a conductance adjusting unit according to one embodiment. FIG. 2B is a plan view showing a conductance adjustment unit according to one embodiment. FIG. 3A is a diagram showing an analysis result of HPLC analysis for a deposited film. FIG. 3B is a diagram showing an analysis result of the HPLC analysis for the deposited film. FIG. 4 is a diagram showing the ratio of impurities contained in the deposited film. FIG. 5 is a diagram illustrating a correspondence relationship between the ratio of impurities contained in the deposited film and the pressure of the material container. FIG. 6 is a diagram illustrating a correspondence relationship between the evaporation rate of the vapor deposition material in the material container and the pressure of the material container. FIG. 7A is a diagram illustrating a correspondence relationship between the evaporation rate of the vapor deposition material A in the material container and the pressure in the material container when the flow rate of the carrier gas is changed. FIG. 7B is a diagram illustrating a correspondence relationship between the evaporation rate of the vapor deposition material B in the material container and the pressure of the material container. FIG. 8A is a perspective view showing a state in which a part of a material container according to an embodiment is cut away. FIG. 8B is a longitudinal sectional view showing a material container according to an embodiment. FIG. 9A is a longitudinal cross-sectional view showing Modification 1 of the conductance adjustment unit according to the embodiment. FIG. 9B is a plan view illustrating Modification Example 1 of the conductance adjustment unit according to the embodiment. FIG. 10 is a longitudinal sectional view showing a second modification of the conductance adjustment unit according to one embodiment. FIG. 11A is a longitudinal cross-sectional view showing Modification 1 of the material container according to the embodiment. FIG. 11B is a plan view showing Modification 1 of the material container according to the embodiment. FIG. 12A is a longitudinal sectional view showing a second modification of the material container according to the embodiment. FIG. 12B is a plan view showing Modification Example 2 of the material container according to the embodiment. FIG. 13 is a diagram schematically showing a modification of the gas flow vapor deposition apparatus according to one embodiment.

  Hereinafter, various embodiments will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals. Further, the disclosed technology is not limited by this embodiment. For example, in the following embodiments, a gas flow vapor deposition apparatus will be described as an example of a film forming apparatus, but the present invention is not limited to this.

  First, the whole structure of a gas flow vapor deposition apparatus is demonstrated. FIG. 1 is a diagram schematically illustrating a gas flow vapor deposition apparatus according to an embodiment. A gas flow vapor deposition apparatus 10 shown in FIG. 1 contains a processing container 11 that defines a processing chamber 12 that accommodates a substrate S to be processed, and a vapor deposition material that is deposited on the substrate S. The material container 13 which flows out the gas containing this from the outflow port 14 is provided. In addition, the gas flow vapor deposition apparatus 10 extends from the outlet 14 of the material container 13 toward the inside of the processing chamber 12, and supplies a gas containing vapor of the vapor deposition material flowing out of the outlet 14 to the inside of the processing chamber 12. It has the transport pipe 15 to transport.

  The processing container 11 is provided with a stage 17 that holds the substrate S. The stage 17 may incorporate an electrostatic chuck that holds the substrate S, for example. A conveyor is provided below the stage 17. The stage 17 is moved relative to the tip of the transport pipe 15 by a conveyor. As a result, the substrate S moves relative to the tip of the transport tube 15. Note that the arrows in FIG. 1 indicate the moving direction of the substrate S.

  The material container 13 is provided with a heater (not shown). The heater heats the vapor deposition material accommodated in the material container 13. As a result, vapor of the vapor deposition material is generated from the vapor deposition material inside the material container 13. A carrier gas transport pipe 19 is connected to the material container 13. The carrier gas transport pipe 19 transports Ar gas as a carrier gas into the material container 13. Note that another inert gas can be used instead of the Ar gas. The material container 13 flows out of the Ar gas transported into the material container 13 from the carrier gas transport pipe 19 and the vapor of the vapor deposition material from the outlet 14. Hereinafter, the gas containing the vapor of the vapor deposition material flowing out from the outlet 14 of the material container 13, that is, the mixed gas of the Ar gas and the vapor of the vapor deposition material will be appropriately referred to as “vapor deposition material gas”.

  The transport pipe 15 is provided with a conductance adjusting unit 21. In this example, the conductance adjusting unit 21 is provided at the distal end portion of the transport pipe 15 extending into the processing chamber 12, but may be provided in the middle part of the transport pipe 15. The conductance adjusting unit 21 adjusts the conductance of the transport pipe 15 so that the pressure of the material container 13 becomes a predetermined value or more. Specifically, the conductance adjusting unit 21 decreases the conductance of the transport pipe 15 by increasing the resistance to the vapor deposition material gas flowing inside the transport pipe 15 so that the pressure of the material container 13 becomes a predetermined value or more. Let Preferably, the conductance adjusting unit 21 adjusts the conductance of the transport pipe 15 so that the pressure of the material container 13 is 0.2 to 10 Pa. As described above, by providing the conductance adjusting portion 21 in the transport pipe 15, the pressure of the material container 13 can be maintained at a predetermined value or more, and thus, the evaporation of impurities from the vapor deposition material inside the material container 13 is suppressed. can do.

  Next, the configuration of the conductance adjustment unit 21 shown in FIG. 1 will be specifically described. FIG. 2A is a longitudinal sectional view showing a conductance adjustment unit according to one embodiment, and FIG. 2B is a plan view showing the conductance adjustment unit according to one embodiment. As shown in FIGS. 2A and 2B, the conductance adjusting unit 21 is a shielding member 121 provided to shield the outlet 15 a at the outlet 15 a of the transport pipe 15 extending into the processing chamber 12. The shielding member 121 has a hole 121 a having a smaller diameter than the transport pipe 15. The hole 121 a communicates with the outlet 15 a of the transport pipe 15. In this example, the shielding member 121 has one hole 121a, but can also have a plurality of holes 121a.

  The vapor deposition material gas flowing inside the transport pipe 15 is shielded by a portion other than the hole 121 a of the shielding member 121. As a result, the conductance of the transport pipe 15 decreases, and the pressure of the material container 13 located upstream of the transport pipe 15 increases. On the other hand, a part of the vapor deposition material gas shielded by the portion other than the hole 121 a of the shielding member 121 is sprayed from the hole 121 a of the shielding member 121 and deposited on the substrate S. Thereby, a vapor deposition film is formed on the substrate S.

  Next, changes in impurities contained in the deposited film before and after providing the conductance adjusting unit of this embodiment will be described. FIG. 3A and FIG. 3B are diagrams showing analysis results of high performance liquid chromatography (HPLC) analysis on the deposited film. HPLC analysis is an analysis technique for separating components contained in a substance into components. Here, it is assumed that α-NPD is used as the vapor deposition material. 3A and 3B, the horizontal axis indicates time [min], and the vertical axis indicates signal intensity [%]. 3A and 3B, Experimental Example 1 is an example in which the shielding member 121 that is the conductance adjustment unit 21 of the present embodiment is provided at the outlet 15a of the transport pipe 15. In contrast, Comparative Example 0 is an example in which HPLC analysis was performed on the vapor deposition material (α-NPD) itself instead of the vapor deposition film, and Comparative Example 1 is a conductance adjustment unit 21 of the present embodiment. In this example, a certain shielding member 121 is not provided at the outlet 15 a of the transport pipe 15.

  As shown in FIGS. 3A and 3B, in Comparative Example 0 and Comparative Example 1, the height of the peak of impurity A, impurity B or impurity C was relatively high in addition to the peak of α-NPD. On the other hand, in Experimental Example 1, the peak height of the impurity A, the impurity B, or the impurity C was lower than that of Comparative Example 0 and Comparative Example 1. From this analysis result, by providing the shielding member 121 at the outlet 15a of the transport pipe 15, the conductance of the transport pipe 15 decreases, the pressure of the material container 13 increases, and as a result, the vapor deposition material ( It can be seen that the evaporation of impurities in (α-NPD) can be suppressed.

  FIG. 4 is a diagram showing the ratio of impurities contained in the deposited film. In FIG. 4, Experimental example 1, Comparative example 0, and Comparative example 1 correspond to Experimental example 1, Comparative example 0, and Comparative example 1 shown in FIGS. 3A and 3B, respectively.

  As shown in FIG. 4, in Comparative Example 0 and Comparative Example 1, the ratio of impurity A, impurity B, or impurity C contained in the vapor deposition material (α-NPD) was relatively large. On the other hand, in Experimental Example 1, the ratio of Impurity A, Impurity B or Impurity C contained in the vapor deposition material (α-NPD) was lower than that of Comparative Example 0 and Comparative Example 1. From this analysis result, by providing the shielding member 121 at the outlet 15a of the transport pipe 15, the conductance of the transport pipe 15 decreases, the pressure of the material container 13 increases, and as a result, the vapor deposition material ( It can be seen that the evaporation of impurities in (α-NPD) can be suppressed.

  Next, the correspondence relationship between the ratio of impurities contained in the deposited film and the pressure in the material container 13 will be described. FIG. 5 is a diagram illustrating a correspondence relationship between the ratio of impurities contained in the deposited film and the pressure of the material container. Here, it is assumed that α-NPD is used as the vapor deposition material. In FIG. 5, the horizontal axis indicates the pressure [Pa] of the material container 13 and the vertical axis indicates the ratio [%] of impurities contained in the deposited film formed on the substrate S. As shown in FIG. 5, when the pressure of the material container 13 was set to 0.2 Pa or more, the ratio of impurities contained in the deposited film formed on the substrate S was suppressed to 0.02% or less. From this result, by adjusting the conductance of the transport pipe 15 so that the pressure of the material container 13 becomes 0.2 Pa or more, the ratio of impurities contained in the vapor deposition film, in other words, vapor deposition inside the material container 13. It can be seen that evaporation of impurities in the material can be suppressed. Therefore, the conductance adjustment unit 21 of the present embodiment adjusts the conductance of the transport pipe 15 so that the pressure of the material container 13 is 0.2 Pa or more.

  Here, the conductance adjusting unit 21 adjusts the conductance of the transport pipe 15 so that the pressure of the material container 13 becomes 0.2 to 10 Pa in order to avoid an excessive increase in the pressure of the material container 13. This is because when the pressure in the material container 13 increases excessively, not only the evaporation of impurities in the vapor deposition material but also the vapor deposition material itself can be suppressed, resulting in a decrease in the evaporation rate of the vapor deposition material. This is to prevent such a situation.

FIG. 6 is a diagram illustrating a correspondence relationship between the evaporation rate of the vapor deposition material in the material container and the pressure of the material container. Here, it is assumed that α-NPD is used as the vapor deposition material. In FIG. 6, the horizontal axis indicates the pressure [Pa] of the material container 13, and the vertical axis indicates the evaporation rate [mg / cm ² · min] of the vapor deposition material in the material container 13. As shown in FIG. 6, when the pressure of the material container 13 was set to 10 Pa or less, the evaporation rate of the vapor deposition material in the material container 13 was maintained at 3.0 mg / cm ² · min or more. From this result, it is understood that the evaporation rate of the vapor deposition material in the material container 13 can be maintained at the optimum value by adjusting the conductance of the transport pipe 15 so that the pressure of the material container 13 is 10 Pa or less. Therefore, the conductance adjusting unit 21 of the present embodiment adjusts the conductance of the transport pipe 15 so that the pressure of the material container 13 is 0.2 to 10 Pa. For example, the hole diameter of the hole 121a of the shielding member 121 as the conductance adjusting unit 21 is selected so that the pressure of the material container 13 is 0.2 to 10 Pa.

  In addition, the conductance adjustment unit 21 of the present embodiment preferably adjusts the conductance of the transport pipe 15 so that the pressure of the material container 13 is 0.3 to 2 Pa. For example, the hole diameter of the hole 121a of the shielding member 121 as the conductance adjusting unit 21 is preferably selected so that the pressure of the material container 13 is 0.3 to 2 Pa.

FIG. 7A is a diagram illustrating a correspondence relationship between the evaporation rate of the vapor deposition material A in the material container and the pressure in the material container when the flow rate of the carrier gas is changed. In the example shown in FIG. 7A, it is assumed that an organic EL material such as an organic EL element is used as the vapor deposition material A. In FIG. 7A, the horizontal axis indicates the pressure [Pa] of the material container 13, and the vertical axis indicates the evaporation rate [mg / cm ² · min] of the vapor deposition material A in the material container 13. In the example shown in FIG. 7A, the results obtained when the flow rate of Ar gas as the carrier gas is changed to 2 sccm, 8 sccm, 30 sccm, and 0 sccm (vacuum deposition) are shown.

  As shown in FIG. 7A, when the pressure of the material container 13 is set to 0.3 to 2 Pa, even if the flow rate of Ar gas is changed to different values (2 sccm, 8 sccm, and 30 sccm), the inside of the material container 13 The evaporation rate of the deposition material A was maximized. In the example shown in FIG. 7A, the evaporation rate of the vapor deposition material A in the material container 13 when the Ar gas flow rate is changed to different values (2 sccm, 8 sccm, and 30 sccm) is the Ar gas flow rate of 0 sccm (vacuum deposition). ) And increased in comparison with the evaporation rate of the vapor deposition material A in the material container 13. From this result, by adjusting the conductance of the transport pipe 15 so that the pressure of the material container 13 becomes 0.3 to 2 Pa, the evaporation rate of the vapor deposition material in the material container 13 is maximized, and vacuum deposition is supported. It can be seen that it can be maintained at a value larger than the deposition rate.

FIG. 7B is a diagram illustrating a correspondence relationship between the evaporation rate of the vapor deposition material B in the material container and the pressure of the material container. In the example shown in FIG. 7B, it is assumed that HAT-CN is used as the vapor deposition material B. In FIG. 7B, the horizontal axis indicates the pressure [Pa] of the material container 13, and the vertical axis indicates the evaporation rate [mg / cm ² · min] of the vapor deposition material B in the material container 13. Further, in the example shown in FIG. 7B, the result obtained when the flow rate of Ar gas as the carrier gas is set to 8 sccm is shown.

  As shown in FIG. 7B, when the pressure of the material container 13 is set to 0.3 to 2 Pa, even if the vapor deposition material in the material container 13 is changed from the vapor deposition material A to the vapor deposition material B, the material container 13 The evaporation rate of the vapor deposition material B inside became the maximum. From this result, by adjusting the conductance of the transport pipe 15 so that the pressure of the material container 13 becomes 0.3 to 2 Pa, the vapor deposition material in the material container 13 is controlled regardless of the type of the vapor deposition material in the material container 13. It can be seen that the evaporation rate can be maximized.

  In this way, by adjusting the conductance of the transport pipe 15 so that the pressure of the material container 13 becomes 0.3 to 2 Pa, the evaporation rate of the vapor deposition material in the material container 13 is maximized and it is compatible with vacuum deposition. It can be maintained at a value larger than the deposition rate. Further, by adjusting the conductance of the transport pipe 15 so that the pressure of the material container 13 becomes 0.3 to 2 Pa, the evaporation rate of the vapor deposition material in the material container 13 regardless of the type of the vapor deposition material in the material container 13. Can be maximized.

  In FIGS. 7A and 7B, when the flow rate of Ar gas as the carrier gas is other than 0 sccm, the evaporation rate of the vapor deposition material decreased when the pressure of the material container 13 was less than 0.3 Pa. This is because when the pressure in the material container 13 is less than 0.3 Pa, the flow of Ar gas changes from a viscous flow to an intermediate flow between the viscous flow and the molecular flow, and the molecules in the vapor of the vapor deposition material and the Ar gas It is considered that this is because collisions with the molecule decreased, and as a result, the carrier function of Ar gas decreased.

  Next, the configuration of the material container 13 shown in FIG. 1 will be specifically described. FIG. 8A is a perspective view showing a state in which a part of the material container according to one embodiment is cut away, and FIG. 8B is a longitudinal sectional view showing the material container according to one embodiment. As shown in FIGS. 8A and 8B, the material container 13 includes a container main body 136 including a bottom plate 134 and an outer wall 132, and an opening formed in the upper part, and a plurality of trays 138 stacked in multiple stages inside the container main body 136. And a lid 140 attached to the container main body 136 so as to close the opening of the container main body 136.

  A carrier gas introduction path 132 a is provided on the outer wall 132 of the container body 136. The carrier gas introduction path 132 a is connected to the carrier gas transport pipe 19. The carrier gas introduction path 132 a introduces Ar gas from the carrier gas transport pipe 19 into the carrier gas introduction space 142 between the inside of the outer wall 132 of the container body 136 and the outer walls of the plurality of trays 138. In addition, a heater (not shown) is connected to the container body 136. The heater heats the vapor deposition material X held on each tray 138. Thereby, vapor of the vapor deposition material X is generated from the vapor deposition material X.

  The tray 138 is formed in an annular shape in appearance, and holds the vapor deposition material X in a space sandwiched between the annular outer wall and the annular inner wall lower than the outer wall. On the top of the outer wall of the tray 138, a support portion for supporting the other tray 138 is formed. The trays 138 are stacked in multiple stages by placing other trays 138 on the support portion. The annular inner wall of the tray 138 defines a central flow path 144 leading to the outlet 14. A plurality of through holes 138 a are formed on the outer wall of the tray 138. The through hole 138 a allows the Ar gas introduced into the carrier gas introduction space 142 to communicate with the vapor deposition material X. The Ar gas and the vapor of the vapor deposition material X introduced from the through hole 138a become the vapor deposition material gas and are transported to the lid 140 via the central flow path 144.

  The lid 140 seals the container main body 136. The lid 140 has an outlet 14 through which the vapor deposition material gas transported from the central channel 144 flows out to the transport pipe 15.

  According to the gas flow vapor deposition apparatus 10 of this embodiment, since the shielding member 121 which is the conductance adjusting unit 21 is provided in the transport pipe 15, the conductance of the transport pipe 15 can be reduced, and the pressure of the material container 13 can be reduced. It can be raised above a predetermined value. As a result, according to the present embodiment, the evaporation of impurities in the vapor deposition material inside the material container 13 can be suppressed, and as a result, the quality of the vapor deposition film formed on the substrate S can be improved.

  Moreover, according to the gas flow vapor deposition apparatus 10 of this embodiment, since the several tray 138 holding vapor deposition material is stacked in the container main body 136 in multiple stages, it is possible to increase the surface area of the vapor deposition material as much as possible. Can do. As a result, according to this embodiment, even when the pressure of the material container 13 rises to a predetermined value or more, evaporation of the vapor deposition material itself can be promoted, and a decrease in the evaporation rate of the vapor deposition material can be suppressed. .

  In the above description, the embodiment in which the shielding member 121 as the conductance adjusting unit 21 is provided at the outlet 15a of the transport pipe 15 so as to shield the outlet 15a is shown as an example, but the present invention is not limited thereto. Hereinafter, modified examples of the conductance adjusting unit will be described. FIG. 9A is a longitudinal sectional view showing Modification 1 of the conductance adjustment unit according to one embodiment, and FIG. 9B is a plan view showing Modification 1 of the conductance adjustment unit according to one embodiment.

  As shown in FIGS. 9A and 9B, the conductance adjusting unit 21 according to the first modification is provided to shield the outlet 15a at the outlet 15a of the transport pipe 15 extending into the processing chamber 12, and the outlet 15a. This is a shielding member 221 having a plurality of holes 221a having a smaller diameter. The diameters of the plurality of holes 221a are set to different values according to the pressure of the material container 13 located on the upstream side of the transport pipe 15. For example, when the pressure of the material container 13 is 0.2 Pa, the diameter of one hole 221a among the plurality of holes 221a is set to 4.30 mm, and the pressure of the material container 13 is 0.3 Pa. The diameter of the other hole 221a is set to 3.59 mm.

  Of the plurality of holes 221a, the hole 221a communicating with the outlet 15a of the transport pipe 15 is dynamically changeable. That is, the shielding member 221 is rotatably attached to the shaft member 222, and when the shielding member 221 rotates around the shaft member 222, one hole 221a among the plurality of holes 221a is transported. It communicates with 15 outlets 15a.

  According to the conductance adjusting unit 21 according to the modified example 1, the hole 221a communicating with the outlet 15a of the transport pipe 15 among the plurality of holes 221a of the shielding member 221 provided in the transport pipe 15 is dynamically changeable. The conductance of the transport pipe 15 can be adjusted to a desired value. As a result, since the conductance of the transport pipe 15 can be set to a free value, the pressure of the material container 13 located on the upstream side of the transport pipe 15 can be appropriately changed, and vapor deposition inside the material container 13 can be performed. Regardless of the type of material, evaporation of impurities in the vapor deposition material can be suppressed.

  FIG. 10 is a longitudinal sectional view showing a second modification of the conductance adjustment unit according to one embodiment. As shown in FIG. 10, the conductance adjusting unit 21 according to the modification 2 is a vapor deposition head 321 attached to the outlet 15 a of the transport pipe 15 extending into the processing chamber 12. The vapor deposition head 321 is a multistage dispersion plate (a first dispersion plate 331, a second dispersion plate 333, and a third dispersion plate) disposed in the main body container of the vapor deposition head 321 with the plate surfaces facing each other and spaced apart from each other. Plate 335). The first dispersion plate 331, the second dispersion plate 333 and the third dispersion plate 335 disperse the vapor deposition material gas transported to the vapor deposition head 321 through the transport pipe 15.

  The first dispersion plate 331 is formed with an opening 331a through which the vapor deposition material gas flows toward the second dispersion plate 333 on the downstream side. The second dispersion plate 333 is formed with an opening 333a through which the vapor deposition material gas flows toward the third dispersion plate 335 on the downstream side. The third dispersion plate 335 has an opening 335a through which the vapor deposition material gas flows toward the downstream flow path. Further, the vapor deposition head 321 includes a nozzle 322 that ejects vapor deposition material gas dispersed by the first dispersion plate 331, the second dispersion plate 333, and the third dispersion plate 335. For convenience of description, the opening 335a is defined as an opening 335a-1 that is positioned in the forward direction of the flow of the vapor deposition material gas, and an opening 335a-2 is positioned in the reverse direction of the flow of the vapor deposition material gas. In addition, when the opening 335a-1 and the opening 335a-2 are not particularly distinguished, they are simply referred to as the opening 335a.

  The first dispersion plate 331, the second dispersion plate 333, and the third dispersion plate 335 form a first gas channel 336a that branches the vapor deposition material gas transported through the transport pipe 15 in two directions. . In addition, the first dispersion plate 331, the second dispersion plate 333, and the third dispersion plate 335 each sequentially deposit the vapor deposition material gas branched in two directions by the first gas flow path 336a in two directions. Second gas flow paths 337a and 338a to be branched are formed. In this example, the second gas flow path has two stages, but may have any number of one or more stages. For convenience of explanation, the second gas flow path 338a is positioned in the reverse direction of the flow of the vapor deposition material gas, with the second gas flow path 338a-1 being positioned in the forward direction of the flow of the vapor deposition material gas. This is the second gas flow path 338a-2. Further, when the second gas flow path 338a-1 and the second gas flow path 338a-2 are not particularly distinguished, they are simply referred to as the second gas flow path 338a.

  The vapor deposition material gas flowing into the vapor deposition head 321 from the transport pipe 15 branches in two directions in the first gas flow path 336a. The vapor deposition material gas branched in two directions in the first gas flow path 336a is branched again in two directions in the second gas flow path 337a. Of the vapor deposition material gas branched in two directions in the second gas flow path 337a, the vapor deposition material gas flowing in the forward direction of the gas flow branches again in two directions in the second gas flow path 338a-1. Of the vapor deposition material gas branched in two directions in the second gas flow path 337a, the vapor deposition material gas flowing in the direction opposite to the forward direction of the gas flow (reverse direction) is the second gas flow path 338a-2. Branch again in two directions. The vapor deposition material gas branched in the second gas flow path 338 a is ejected from the nozzle 322 and vapor deposited on the substrate S. Thus, the flow path of the vapor deposition material gas in the vapor deposition head 321 is formed in a tournament shape.

  Further, the opening 331 a of the first dispersion plate 331, the opening 333 a of the second dispersion plate 333 and the opening 335 a of the third dispersion plate 335 are formed so as to have a smaller diameter than the transport pipe 15.

  According to the conductance adjusting unit 21 according to the modified example 2, each opening in the multistage dispersion plate that disperses the vapor deposition material gas is formed so that the diameter is smaller than that of the transport pipe 15, thereby reducing the conductance of the transport pipe 15. Meanwhile, the vapor deposition material gas can be appropriately dispersed. As a result, the pressure of the material container 13 positioned on the upstream side of the transport pipe 15 can be increased to a predetermined value or more, and the vapor deposition material gas can be uniformly injected from the nozzle 322, so that the impurities in the vapor deposition material can be evaporated. While suppressing, the uniformity of the vapor deposition film formed on the substrate S can be improved.

  In the above description, the embodiment in which the lid 140 having only one outlet 14 is mounted on the container main body 136 of the material container 13 is shown as an example, but the present invention is not limited to this. Hereinafter, modified examples of the material container will be described. FIG. 11A is a longitudinal cross-sectional view showing Modification 1 of the material container according to the embodiment, and FIG. 11B is a plan view showing Modification 1 of the material container according to the embodiment.

  As shown in FIGS. 11A and 11B, the material container 13 according to the first modification is stacked in multiple stages inside a container body 136 that includes a bottom plate 134 and an outer wall 132 and has an opening at the top. A plurality of trays 438 and a lid 140 attached to the container body 136 so as to close the opening of the container body 136.

  A carrier gas introduction path 132 a is provided on the bottom plate 134 of the container body 136. The carrier gas introduction path 132 a is connected to the carrier gas transport pipe 19. The carrier gas introduction path 132 a introduces Ar gas from the carrier gas transport pipe 19 into the carrier gas introduction space 440 surrounded by the inner peripheral wall of the tray 438. In addition, a heater (not shown) is connected to the container body 136. The heater heats the vapor deposition material X held on each tray 438. Thereby, vapor of the vapor deposition material X is generated from the vapor deposition material X.

  The tray 438 is formed in an annular shape in appearance, and holds the vapor deposition material in a space sandwiched between the annular outer wall and the annular inner wall higher than the outer wall. On the top of the inner wall of the tray 438, a support portion for supporting the other tray 438 is formed. An annular outer wall of the tray 438 and an inner side of the outer wall 132 of the container body 136 define an annular flow path 442 that reaches the outlet 14. A plurality of through holes (not shown) are formed on the outer wall of the tray 438. The through hole allows the Ar gas introduced into the carrier gas introduction space 440 to communicate with the vapor deposition material X. The Ar gas flowing from the through hole and the vapor of the vapor deposition material X become vapor deposition material gas and are transported to the lid 140 via the annular flow path 442.

  The lid 140 seals the container main body 136. The lid 140 has two outflow ports 14 through which the vapor deposition material gas transported from the annular flow path 442 flows out to the transport pipe 15. In this example, the lid body 140 has two outflow ports 14, but the number of the lid bodies 140 may be three or more.

  According to the material container 13 according to the first modified example, the plurality of trays 438 for holding the vapor deposition material are stacked in the container main body 136 in a multistage manner, and the plurality of outlets 14 are provided in the lid 140. The vapor deposition material gas can easily flow out to the transport pipe 15 while increasing the surface area. As a result, even when the pressure of the material container 13 rises to a predetermined value or more, evaporation of the vapor deposition material itself can be further promoted, and a decrease in the evaporation rate of the vapor deposition material can be efficiently suppressed.

  FIG. 12A is a longitudinal sectional view showing a second modification of the material container according to the embodiment, and FIG. 12B is a plan view showing a second modification of the material container according to the embodiment. The material container 13 according to the modified example 2 has basically the same configuration as the material container 13 described with reference to FIGS. 11A and 11B, and the shape of the outlet 14 of the lid 140 is as illustrated in FIGS. 11A and 11B. This is different from the material container 13 described above. Therefore, the description of the same configuration as the material container 13 described in FIGS. 11A and 11B is omitted.

  As shown in FIGS. 12A and 12B, in the material container 13 according to the modified example 2, the lid 140 has an outlet 14 formed so as to extend along the outer peripheral edge of the lid 140. In this example, the outflow port 14 is formed in a circular shape so as to extend along the outer peripheral edge of the lid 140.

  According to the material container 13 according to the modified example 2, the plurality of trays 438 that hold the vapor deposition material are stacked in a multi-stage inside the container main body 136 and are formed so as to extend along the outer peripheral edge of the lid 140. Since 14 is provided on the lid 140, the vapor deposition material gas can easily flow out to the transport pipe 15 while increasing the surface area of the vapor deposition material. As a result, even when the pressure of the material container 13 rises to a predetermined value or more, evaporation of the vapor deposition material itself can be further promoted, and a decrease in the evaporation rate of the vapor deposition material can be efficiently suppressed.

  Next, the modification of the gas flow vapor deposition apparatus which concerns on one Embodiment is demonstrated. FIG. 13 is a diagram schematically showing a modification of the gas flow vapor deposition apparatus according to one embodiment. In FIG. 13, it is assumed that the direction perpendicular to the paper surface is the moving direction of the substrate S. Further, in FIG. 13, the same parts as those in FIG.

  As shown in FIG. 13, the gas flow vapor deposition apparatus 100 according to the modification includes a plurality of sets of a material container 13, a transport pipe 15, and a conductance adjustment unit 21. More specifically, in the gas flow vapor deposition apparatus 100, there are a plurality of sets of the material container 13, the transport pipe 15, and the conductance adjusting unit 21 along the width direction of the substrate S that is a direction intersecting the moving direction of the substrate S. It is arranged.

  The material containers 13 each store the vapor deposition material X deposited on the substrate S, and the gas containing the vapor of the vapor deposition material X flows out from the outlet 14. The carrier gas transport pipe 19 of the material container 13 is provided with an open / close valve 19a.

  The transport pipe 15 transports the gas containing the vapor of the vapor deposition material X flowing out from the outlet 14 to the processing chamber 12. The diameter of the transport pipe 15 is formed substantially the same as the diameter of the outlet. In the middle of the transport pipe 15, an opening / closing valve 15b is provided.

  The conductance adjusting unit 21 is, for example, a shielding member 121 provided to shield the outlet at the outlet of the transport pipe 15 extending into the processing chamber 12. The shielding member 121 has a plurality of holes 121 a having a smaller diameter than the transport pipe 15.

  According to the gas flow vapor deposition apparatus 100 of the modified example, since a plurality of sets of the material container 13, the transport pipe 15, and the conductance adjusting unit 21 are provided, the pressure of each material container 13 is optimal for ensuring the evaporation rate of the vapor deposition material. The conductance of each transport pipe 15 can be easily adjusted so as to be a value. For this reason, according to the gas flow vapor deposition apparatus 100 of the modified example, evaporation of vapor deposition material in each material container 13 is performed with a simple configuration including only a plurality of combinations of the material container 13, the transport pipe 15, and the conductance adjusting unit 21. The rate can be set to maximum.

10 Gas flow deposition equipment (film deposition equipment)
DESCRIPTION OF SYMBOLS 11 Processing container 12 Processing chamber 13 Material container 14 Outlet 15 Transport pipe 15a Outlet 21 Conductance adjustment part 121,221 Shield member 121a, 221a Hole 136 Container main body 138, 438 Tray 140 Cover body 321 Deposition head 322 Nozzle 331 1st dispersion | distribution Plate 331a Opening 333 Second dispersion plate 333a Opening 335 Third dispersion plate 335a Opening

Claims (10)

A processing container defining a processing chamber for storing a substrate to be processed;
A material container that houses a vapor deposition material to be deposited on the substrate, and outflows a gas containing vapor of the vapor deposition material from an outlet, and
A transport pipe extending from the outlet of the material container toward the inside of the processing chamber and transporting a gas containing vapor of the vapor deposition material flowing out from the outlet to the inside of the processing chamber;
A film forming apparatus comprising: a conductance adjusting unit that is provided in the transport pipe and adjusts the conductance of the transport pipe so that a pressure of the material container becomes a predetermined value or more.   The film forming apparatus according to claim 1, wherein the conductance adjusting unit adjusts the conductance of the transport pipe so that a pressure of the material container is 0.2 to 10 Pa.   The film forming apparatus according to claim 1, wherein the conductance adjusting unit adjusts the conductance of the transport pipe so that a pressure of the material container is 0.3 to 2 Pa. The conductance adjusting unit is a vapor deposition head attached to an outlet of the transport pipe extending into the processing chamber,
The vapor deposition head includes:
A multi-stage dispersion plate for dispersing a gas containing vapor of the vapor deposition material transported through the transport pipe;
A nozzle for injecting a gas containing vapor of the vapor deposition material dispersed by the multistage dispersion plate,
Each of the dispersion plates is formed with an opening that is smaller in diameter than the transport pipe and allows a gas containing vapor of the vapor deposition material to flow downstream. The film forming apparatus according to any one of the above.   The conductance adjusting portion is a shielding member provided at the outlet of the transport pipe extending into the processing chamber so as to shield the outlet, and having a hole having a smaller diameter than the transport pipe. The film-forming apparatus as described in any one of Claims 1-3. The shielding member has a plurality of holes having different diameters according to the pressure of the material container,
6. The film forming apparatus according to claim 5, wherein the hole communicating with the outlet of the transport pipe among the plurality of holes is dynamically changeable. The material container is
A bottomed cylindrical container body having an opening at the top;
A multi-stage tray that is stacked inside the container body and holds the vapor deposition material;
A lid that is attached to the container main body so as to close the opening and has the outflow port for allowing a gas containing vapor of the vapor deposition material held in the multi-stage tray to flow out to the transport pipe. The film forming apparatus according to claim 1.   The film forming apparatus according to claim 7, wherein the lid has a plurality of the outlets.   The film forming apparatus according to claim 7, wherein the lid includes the outflow port formed so as to extend along an outer peripheral edge of the lid.   The film forming apparatus according to claim 1, comprising a plurality of sets of the material container, the transport pipe, and the conductance adjusting unit.

Images