JP2014011431A - Microstructure transcription device, microstructure transcription stamper, and microstructure transcription method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a microstructure transcription stamper capable of forming a thin, even resin remaining film on a substrate by collective transcription by the stamper, even if the stamper has a large-density and large-area pattern.SOLUTION: In a microstructure transcription stamper 1 of the present invention, a pattern of the microstructure transcription stamper 1 includes a plurality of chip regions 6, and a resin supply pattern 9, which supplies a resin of a predetermined volume forming a resin film on a substrate by letting the resin flow toward a chip pattern formed in each of the chip regions 6 when the microstructure transcription stamper 1 is pressed against the resin film, is included in an outer peripheral part of each of the chip regions 6.

Description

  The present invention relates to a fine structure transfer device, a fine structure transfer stamper, and a fine structure transfer method used when forming a fine structure on a substrate.

  Conventionally, a photolithography technique has been often used as a technique for processing a fine pattern required for a semiconductor device or the like. However, as the pattern becomes finer and the required processing dimensions become as small as the wavelength of light used for exposure, it is difficult to cope with the photolithography technique. Therefore, instead of this, an electron beam drawing apparatus, which is a kind of charged particle beam apparatus, has come to be used.

  Unlike the collective exposure method in pattern formation using a light source such as i-line or excimer laser, pattern formation using this electron beam employs a method of directly drawing a mask pattern. Therefore, the exposure (drawing) time increases as the pattern to be drawn increases, and it takes time to complete the pattern. As the degree of integration of the semiconductor integrated circuit increases, the time required for pattern formation increases. There is a concern that the throughput will decrease.

  Therefore, in order to increase the speed of the electron beam lithography system, development of a collective figure irradiation method that combines various shapes of masks and forms an electron beam with a complex shape by irradiating them with an electron beam in a lump. It is being advanced. However, while miniaturization of patterns has progressed, there has been a drawback that the cost of the apparatus becomes high, such as an increase in the size of the electron beam drawing apparatus and high-precision control of the mask position.

  On the other hand, a nanoimprint technique is known as a technique for performing highly accurate pattern formation at a low cost. In this nanoimprint technology, a stamper on which unevenness (surface shape) corresponding to the unevenness of a fine pattern to be formed is embossed, for example, on a transfer target obtained by forming a resin layer on a predetermined substrate. The fine pattern can be transferred to the resin layer.

  In addition, when a stamper having optical transparency is used, the stamper is embossed on the resin layer made of a photocurable resin, and ultraviolet light is emitted through the stamper using a light source such as a high-pressure mercury lamp or LED. By irradiating light, the resin layer can be cured, and a highly accurate pattern can be formed in a short time. In such nanoimprint technology, application to pattern formation of recording bits in a large-capacity recording medium and pattern formation of semiconductor integrated circuits is being studied.

  In general, a fine pattern formed on a resin layer on a substrate by a nanoimprint technique is composed of convex portions and concave portions. The large-capacity recording medium and the semiconductor integrated circuit are formed on the large-capacity recording medium substrate and the semiconductor integrated circuit substrate, respectively, and the remaining film portion (the concave resin layer) is formed using the convex resin layer as a mask. And it can manufacture by etching the substrate part coat | covered with this residual film.

  By the way, the accuracy of the etching process of the substrate portion is affected by the thickness distribution in the surface direction of the remaining film. Specifically, for example, in the case where the thickness variation in the surface direction of the remaining film formed on the substrate exceeds 50 nm as the difference between the maximum thickness and the minimum thickness, if the etching process is performed with a depth of 50 nm, Etching is performed on the substrate where the film is thin, but etching is not performed when the film is thick. Therefore, in order to maintain a predetermined accuracy of etching processing on the substrate, the thickness of the remaining film formed on the substrate needs to be uniform.

  The thickness of the remaining film is desirably thin. For example, when the height difference between the convex portion and the concave portion of the fine pattern (height of the convex portion) is 100 nm, the thickness of the residual film is desirably 100 nm or less. That is, it is desirable that the thickness of the remaining film is not more than the height of the convex portion. This is because if the remaining film is thicker than the height of the convex portion, side etching of the convex portion occurs at the time of etching, making it narrower than the predetermined convex portion width, or the convex portion may disappear.

On the other hand, as the stamper used in the nanoimprint technology, for example, a region having a fine pattern and a region not having a fine pattern are formed adjacent to each other, and various tens of nanometers to hundreds of μm intervals are used. Some of them have a pattern with a large density, such as a pattern in which a plurality of types of patterns having different pattern sizes (intervals between convex portions and concave portions) coexist.
In addition, it is extremely difficult to form a uniform residual film on a substrate with a stamper having such a pattern with a large density. This is because the volume of the resin that needs to be filled in the concave portions of the pattern differs between the large pattern portion with a large pattern size (coarse pattern) and the small pattern portion with a small pattern size (pattern is dense). is there.

  Conventionally, as a nanoimprint technique using a stamper having a large pattern density, a technique for adjusting the amount of resin applied to a substrate by an inkjet method according to the pattern density (for example, refer to Patent Document 1), compared with a large pattern. Technology for forming a pattern so that the depth of the recess in the small pattern is deep (see, for example, Patent Document 2), surplus resin that flows when a stamper is pressed against the resin (resin layer) applied on the substrate There is known a technique for forming a dummy pattern for accepting a pattern on a stamper (see, for example, Patent Documents 3 and 4).

Japanese Patent No. 4792028 JP 2007-95116 A JP 2009-6619 A JP 2008-91782 A

  However, in the conventional nanoimprint technology using a stamper with a large pattern density (for example, see Patent Documents 1 to 4), when the pattern formation area of the stamper is widened, in divided transfer in which the transfer is performed in multiple times on the transfer target However, there is a problem that it is difficult to form a thin and uniform resin residual film on the substrate by one batch transfer.

  Accordingly, an object of the present invention is to provide a fine structure transfer apparatus capable of forming a thin and uniform resin residual film on a substrate by batch transfer of the stamper, even if the stamper has a large and dense pattern with a large density. A microstructure transfer stamper and a microstructure transfer method are provided.

  The microstructure transfer stamper of the present invention that solves the above-described problems is a microstructure transfer stamper in which a stamper having a microstructure is pressed against a resin film formed on a substrate to transfer the microstructure to the resin film. The microstructure has a plurality of chip regions, and a part of the resin film is formed on the outer periphery of the chip region toward a chip pattern formed in the chip region when pressed against the resin film. It has a resin supply pattern that flows and supplies a predetermined volume of resin to be formed.

  Further, a fine structure transfer apparatus of the present invention that solves the above-described problems is characterized by including the fine structure transfer stamper.

  Further, the fine structure transfer method of the present invention that solves the above problems is a fine structure transfer method in which a stamper having a fine structure is pressed against a resin film formed on a substrate, and the fine structure is transferred to the resin film. When the stamper is pressed against the resin film, a predetermined volume of resin that forms a part of the resin film flows from the resin supply pattern provided on the outer periphery of the microstructure toward the microstructure. It is characterized by supplying.

  ADVANTAGE OF THE INVENTION According to this invention, even if it is a stamper which has a pattern with a large density and a large area, a fine structure transfer apparatus and a fine structure capable of forming a thin and uniform resin film on a substrate by batch transfer of the stamper A transfer stamper and a microstructure transfer method can be provided.

It is a schematic diagram for demonstrating the structure of the fine structure transfer apparatus which concerns on embodiment of this invention. It is a top view which shows the surface of the side which has a pattern of the fine structure transcription | transfer stamper which concerns on embodiment of this invention. (A) is a partial plan view showing a resin supply pattern and a chip pattern in a chip region formed on the microstructure transfer stamper of FIG. 2, (b) is a sectional view taken along line IIIb-IIIb in (a), and (c). These are IIIc-IIIc sectional drawings of (a). (A) to (d) are process explanatory views of the microstructure transfer method according to the embodiment of the present invention. (A) And (b) is a top view which shows the surface of the side which has a pattern of the microstructure transfer stamper which concerns on other embodiment of this invention. (A) is the fragmentary top view showing the pattern for resin supply formed in the microstructure transfer stamper which concerns on other embodiment of this invention, and the chip pattern of a chip | tip area | region, (b) is VIb-VIb of (a). Sectional drawing and (c) are VIc-VIc sectional drawings of (a). (A) is a plan view showing a surface having a pattern of a microstructure transfer stamper according to another embodiment of the present invention, and (b) is an outer side of a chip region in the microstructure transfer stamper of (a). (C) is a partially enlarged view showing the state of the resin supply pattern and the resin discharge pattern formed on the chip, and (c) is a state in which the chip pattern, the resin supply pattern and the resin discharge pattern in the chip region of (b) are transferred to the resin film. It is a schematic diagram which shows. It is a top view which shows the modification of the fine structure transcription | transfer stamper of Fig.7 (a).

Next, embodiments of the present invention will be described in detail with reference to the drawings as appropriate.
As shown in FIG. 1, a fine structure transfer apparatus A according to this embodiment includes a fine structure transfer stamper 1 (hereinafter simply referred to as “stamper 1”) having a fine pattern, and the stamper 1 is placed on a substrate 2. The pattern of the stamper 1 is transferred to the resin film 3 by being pressed against the formed resin film 3.

  In this fine structure transfer apparatus A, the stamper 1 is fixed to the plate 5 so that the pattern forming surface faces the substrate 2. Examples of the method for fixing the stamper 1 to the plate 5 include adhesion, vacuum suction, and mechanical chuck, but are not limited thereto. Further, the plate 5 includes an elevator mechanism (not shown) that moves the stamper 1 toward and away from the substrate 2. The stamper 1 in the present embodiment is formed of a light transmissive material, and the stamper 1 will be described in detail later.

The substrate 2 is fixed to a stage 4 disposed below the stamper 1. Examples of the method for fixing the substrate 2 to the stage 4 include adhesion, vacuum suction, and mechanical chuck, but are not limited thereto.
There is no restriction | limiting in particular as the board | substrate 2, According to the use of the fine structure obtained by transferring a fine pattern, it can set suitably, for example, a silicon wafer, various metal materials, glass, quartz, ceramic, resin Etc.
The shape of the substrate 2 is a planar shape, and examples thereof include a circle, an ellipse, and a polygon. Further, the substrate 2 may be processed with a center hole.

On the board | substrate 2, the said resin film 3 formed by apply | coating a photocurable resin composition is arrange | positioned.
Examples of the photocurable resin contained in the photocurable resin composition include those having a (meth) acryloyl group, a vinyl group, an epoxy group, an oxetanyl group, and the like, and those having an epoxy group and an oxetanyl group are particularly desirable.

The photocurable resin composition contains a photopolymerization initiator.
Examples of the photopolymerization initiator include, but are not limited to, benzyl ketal, α-hydroxyketone, α-aminoketone, acylphosphine oxide, titanocenone, oxyphenylacetate ester, and oxime ester.

There is no restriction | limiting in particular as a coating method of this photocurable resin composition, For example, the dispensing method, the inkjet method, the spray method, a spin coat method etc. are mentioned. Of these, spin coating is preferred.
An adhesive layer for promoting adhesion with the resin film 3 can be formed on the surface of the substrate 2.

  As will be described later, the resin film 3 on the substrate 2 is irradiated from a light source (not shown) provided on the back surface (surface on the plate 5 side) of the stamper 1 when the stamper 1 is pressed. It is cured by the ultraviolet ray UV (see FIG. 4C).

  Next, the stamper 1 according to the present embodiment will be described. FIG. 2 to be referred to is a plan view showing a surface of the microstructure transfer stamper according to the present embodiment on the side having the pattern. 3A is a partial plan view showing a resin supply pattern formed on the microstructure transfer stamper in FIG. 2 and a chip pattern in the chip region, and FIG. 3B is a cross-sectional view taken along line IIIb-IIIb in FIG. Sectional drawing and FIG.3 (c) are IIIc-IIIc sectional drawings of Fig.3 (a).

  The stamper 1 (see FIG. 1) has a fine pattern (not shown) on the surface facing the resin film 3 (see FIG. 1). As this pattern, for example, a dot pattern in which a plurality of minute protrusions are regularly arranged, a pattern in which minute recesses are regularly arranged on the contrary, a line-and-line in which a plurality of stripes are regularly arranged, and the like. Examples thereof include a space pattern (lamella pattern).

  “Fine” in the present embodiment refers to a size (pattern size) from nanometer to micrometer, and when the pattern (fine structure) transferred to the resin film 3 is a dot pattern, for example, they are adjacent to each other. The spacing (full pitch) between the microprotrusions (convex portions) is from nanometers to micrometers, and in the case of a lamellar pattern, the spacing (full pitch) between adjacent strips (convex portions) is from nanometers to micrometers. That is the size.

  As shown in FIG. 2, the stamper 1 according to the present embodiment has a substantially disk shape, and includes a plurality of chip regions 6 in which chip patterns 10 (see FIG. 3A) to be described later are formed, And a resin supply pattern 9 formed on the outer side (outer peripheral portion) of the chip region 6.

  The stamper 1 is made of a light transmissive material such as glass, quartz, or resin. Moreover, as the stamper 1, what was formed with the composite material which combined these materials can also be used.

  The chip region 6 in the present embodiment is partitioned by a rectangular outline 11 in plan view. The rectangular outline 11 is formed on the substrate 2 (see FIG. 1) side through a subsequent etching process or the like based on the chip pattern 10 (see FIG. 3A) formed in the chip region 6. This corresponds to a scribe line when a chip (not shown) to be cut is cut out by a dicing saw or the like.

  As shown in FIG. 2, the plurality of chip regions 6 formed in the stamper 1 in the present embodiment are arranged in a plurality of columns and a plurality of rows. Specifically, a total of 36 chip regions 6 are allocated to one side of the stamper 1 in 8 columns, and in the order of columns from the right side to the left side in FIG. 2, 2 rows, 4 rows, 6 rows, 6 rows, The columns of the chip area 6 are arranged so as to be 6 rows, 6 rows, 4 rows, and 2 rows. Note that the number and arrangement of the chip regions 6 are not limited to this, and can be appropriately set according to the chip size, the shape of the substrate 2, the size of the substrate 2, and the like. The resin supply pattern 9, which will be described in detail later, is formed on a portion of the stamper 1 excluding the chip area 6, that is, between the arrangement of the chip areas 6 and along the outer periphery of the stamper 1.

As shown in FIGS. 3A to 3C, the stamper 1 in the present embodiment has a chip pattern 10 including a large pattern 7 and a small pattern 8 in a chip region 6. .
Incidentally, the small pattern 8 in the present embodiment is composed of a line and space pattern provided so as to extend in the vertical direction of the paper surface of FIG. Further, two sets of large patterns 7 are provided with a small pattern 8 sandwiched in the vertical direction of FIG. 3A, and each large pattern 7 includes two pieces extending in the horizontal direction of FIG. 3A. It is composed of strips 7a (line and space pattern).

  The large pattern 7 and the small pattern 8 have different pattern sizes, and the interval (full pitch) between the adjacent stripes 7a (projections) of the large pattern 7 is adjacent to the small pattern 8. It is larger than the interval (full pitch) between the strips 8a (convex portions).

  Note that the large pattern 7 and the small pattern 8 shown in FIGS. 3A to 3C schematically show these, and the pattern size is different from the actual size for convenience of drawing. Incidentally, the pattern size of the large pattern 7 (full pitch defined by the interval between the strips (convex portions)) is 100 times or more the pattern size of the small pattern 8 (full pitch defined by the interval between the strips (convex portions)). Can be set to be

The chip pattern 10 in the present invention is not limited to the large pattern 7 and the small pattern 8 described above. For example, the pattern can be used in combination with other patterns such as protrusions, depressions (pits), stripes, etc., or can be used alone. The ratio (area ratio) occupied by the pattern 8 can also be set as appropriate.
Further, the chip pattern 10 is not limited to the two types of the large pattern 7 and the small pattern 8, and can be configured by two or more types of patterns that are distinguished by a difference in pattern form, pattern size, and the like.

  Next, the resin supply pattern 9 will be described. As described above, the resin supply pattern 9 is formed on the outer periphery of each chip region 6. As shown in FIGS. 2 and 3A to 3C, the resin supply pattern 9 in this embodiment is formed outside the chip region 6 with the outline 11 as a boundary. The resin supply pattern 9 is formed with convex portions having the same height as the convex portions of the chip pattern 10 (the large pattern 7 and the small pattern 8).

  Further, the surface area occupied by the convex portions of the resin supply pattern 9 is formed to be larger than the surface area occupied by the convex portions of the chip pattern 10 (the large pattern 7 and the small pattern 8).

  As will be described later, such a resin supply pattern 9 is directed toward the chip pattern 10 formed in each chip region 6 when the stamper 1 is pressed against the resin film 3 (see FIG. 4B). The photocurable resin composition (resin) having a predetermined volume for forming the resin film 3 is supplied by flowing.

  And the surface area which the convex part of the said resin supply pattern 9 occupies is calculated by the volume of the photocurable resin composition (resin) made to flow into the chip pattern 10 (the large pattern 7 and the small pattern 8). Incidentally, it is desirable that the volume of the photocurable resin composition (resin) to which the resin supply pattern 9 flows is set to be larger than the volume filled in the concave portions of the large pattern 7 and the small pattern 8.

  The pattern of the stamper 1 including the chip pattern 10 (the large pattern 7 and the small pattern 8) and the resin supply pattern 9 as described above can be applied to the material of the stamper 1, for example, photolithography, focused ion It can be formed using methods such as beam lithography, electron beam lithography, and nanoprinting. Further, these methods can be appropriately selected according to the processing accuracy of the pattern formed on the stamper 1, but are not limited to these, and other forming methods can be adopted.

Next, a microstructure transfer method using the microstructure transfer apparatus A (see FIG. 1) according to the present embodiment will be described.
In the microstructure transfer method of the present invention, when the stamper 1 is pressed against the resin film 3, the resin film 3 is moved from the outer peripheral portion of each chip region 6 toward the chip pattern 10 formed in each chip region 6. The main feature is that the above-mentioned photocurable resin composition (resin) having a predetermined volume to be formed is supplied in a fluidized state.

Hereinafter, the microstructure transfer method will be described while explaining the operation of the microstructure transfer apparatus A. FIGS. 4A to 4D to be referred to are process explanatory views of the fine structure transfer method according to the embodiment of the present invention.
4A to 4D are partially enlarged views of the stamper 1 facing the resin film 3 provided on the substrate 2 in the fine structure transfer apparatus A shown in FIG. The stamper 1 part corresponding to the fragmentary sectional view shown in FIG. 3B shows a state in which the resin film 3 is opposed.

  As shown in FIG. 1, a substrate 2 provided with a resin film 3 is fixed on a stage 4 and a stamper 1 is fixed to a plate 5 to constitute a fine structure transfer apparatus A. 4A, the chip pattern 10 formed in the chip region 6 of the stamper 1 and the resin supply pattern 9 formed on the outer periphery of the chip region 6 are formed on the resin film on the substrate 2. 3 will be opposed. In FIG. 4A, reference numeral 8a is a strip of the small pattern 8, and FIG. 4A shows the strip 8a in its cross section. In FIG. 4A, reference numeral 7a is a strip of the large pattern 7, and FIG. 4A shows the strip 7a on a part of the side surface.

When the plate 5 shown in FIG. 1 is lowered by a lifting mechanism (not shown), the stamper 1 is pressed against the resin film 3 as shown in FIG. At this time, the resin forming the resin film 3 facing the chip pattern 10 in the chip region 6 is preferentially filled in the recesses of the chip pattern 10.
When the stamper 1 is brought into contact with the resin film 3, the stamper 1 and the resin film 3 are placed under reduced pressure or in a gas atmosphere such as nitrogen in order to accelerate the curing of the resin film 3 later. After the exposure, the stamper 1 and the resin film 3 can be brought into contact with each other.

  When the stamper 1 is brought into contact with the resin film 3, the stamper 1 and the resin film 3 are aligned by aligning the stamper 1 and the substrate 2 by an alignment mechanism (not shown) provided in the fine structure transfer apparatus A. Can be contacted. Incidentally, examples of the alignment mechanism include an optical alignment type and a mechanical alignment type.

  In the fine structure transfer method according to the present embodiment, as shown in FIG. 4B, when the stamper 1 is pressed against the resin film 3, the resin supply pattern 9 is a resin facing the resin supply pattern 9. The resin forming the film 3 is made to flow and supplied toward the chip pattern 10. As a result, the stamper 1 spreads the resin that forms the resin film 3 on the substrate 2.

  Next, in this fine structure transfer method, as shown in FIG. 4C, ultraviolet light UV is emitted from the light source (not shown) installed on the back side of the stamper 1 with the stamper 1 pressed against the resin film 3. The resin film 3 is irradiated. As a result, the resin film 3 is cured in a state following the shape of the chip pattern 10 (see FIG. 4B) of the stamper 1.

  Then, as shown in FIG. 4D, the stamper 1 is peeled off from the cured resin film 3 when the plate 5 shown in FIG. As a result, a cured product of the resin film 3 to which the chip pattern 10 of the stamper 1 is transferred is formed on the substrate 2. Further, between the convex portion of the chip pattern 10 of the stamper 1 and the substrate 2, in other words, between the concave portion of the pattern transferred to the cured product of the resin film 3 and the substrate 2, and between the resin supply pattern 9 and the substrate 2, In the meantime, a residual film 12 made of a cured product of the resin film 3 is formed.

According to the present embodiment as described above, the following operational effects can be achieved.
According to the present embodiment, the resin supply pattern 9 provided on the outer periphery of the chip region 6 is directed toward the chip region 6 having the chip patterns 10 (large pattern 7 and small pattern 8) having coarse and dense. The photo-curable resin composition (resin) of is fluidized and supplied. Therefore, the resin is sufficiently supplied to the chip pattern 10 (particularly, the large pattern 7) that is formed in the central portion of the stamper 1 and tends to lack resin. As a result, even if the stamper 1 has a chip pattern 10 having a large pattern formation area and a coarse / dense pattern, the fine pattern transferred onto the substrate 2 by batch transfer of the stamper 1 can be formed without defects.

  Further, since the resin is sufficiently supplied to the chip pattern 10 in the chip region 6 by the resin supply pattern 9, there is no defect with a smaller amount of resin (even the thinner resin film 3) than in the past. A microstructure can be formed on the substrate 2. As a result, the remaining film 12 can be formed thinly and uniformly on the substrate 2.

  In addition, the resin supply pattern 9 is formed by convex portions having the same height as the convex portions of the chip pattern 10 (large pattern 7 and small pattern 8), and the surface area occupied by the convex portions of the resin supply pattern 9 in plan view is Since it is formed so as to be larger than the surface area occupied by the convex portions of the large pattern 7, a sufficient amount of resin should be provided for the large pattern 7 for which a relatively large amount of resin must be secured. Can be supplied.

In addition, this embodiment is implemented in various forms, without being limited to the said embodiment.
In the above embodiment, the case where the resin supply pattern 9 is formed between the rows of the chip regions 6 arranged at equal intervals in the left-right direction in FIG. 2 is described. The shape can be changed according to the arrangement. FIGS. 5A and 5B to be referred to next are plan views showing a surface having a pattern of a microstructure transfer stamper according to another embodiment of the present invention, which is different from the above embodiment. The aspect of the resin supply pattern is shown.

  As shown in FIG. 5A, in this stamper 1, the width of the resin supply pattern 9 formed between the rows of the chip regions 6 is formed so as to become narrower toward the outside from the center of the stamper 1. Has been. That is, as shown in FIG. 5A, the relationship of width W1> width W2> width W3 is satisfied from the center of the stamper 1 toward the outside.

  According to the resin supply pattern 9 as described above, the arrangement density of the chip regions 6 increases from the outer side of the stamper 1 toward the center in the left-right direction of FIG. And gradually grows. In other words, in this stamper 1, the width of the resin supply pattern 9 is increased as the arrangement density of the chip regions 6 increases, in other words, the surface area of the resin supply pattern 9 is increased, and the chip pattern 10 in each chip region 6 is formed. It is the structure which can fully ensure the amount of resin to supply.

  As shown in FIG. 5B, the resin supply pattern 9 can be formed between the chip regions 6 arranged in a staggered manner.

According to such a resin supply pattern 9, the amount of resin supplied from the resin supply pattern 9 to each chip region 6 by forming the resin supply pattern 9 between the chip regions 6 arranged in a staggered manner. Can be controlled to be substantially constant.
In addition, about the space | interval of chip area | region 6, it is desirable to devise arrangement | positioning so that as many acquisitions as possible can be obtained.

  Further, in the above embodiment, the resin supply pattern 9 is formed with a convex portion having the same height as the convex portion of the chip pattern 10 formed in the chip region 6. However, if the resin can be supplied to the chip pattern 10, Without being limited thereto, the resin supply pattern 9 may be formed of a line and space pattern, a dot pattern, or the like.

  In the above-described embodiment, the example in which the resin supply pattern 9 is formed outside the chip area 6 with the outline 11 of the chip area 6 as a boundary has been described. However, the present invention also applies to the inside of the outline 11 of the chip area 6. It can be set as the structure which has the resin supply pattern 9. FIG. Next, FIG. 6A to be referred to is a partial plan view showing a resin supply pattern and a chip pattern in a chip region formed in a microstructure transfer stamper according to another embodiment of the present invention, and FIG. FIG. 6A is a sectional view taken along line VIb-VIb, and FIG. 6C is a sectional view taken along line VIc-VIc in FIG.

  As shown in FIGS. 6A to 6C, the stamper 1 has a resin supply pattern 9 outside the contour 11 of the chip region 6, and the contour 11 and the chip inside the contour 11. A resin supply pattern 9 is also provided between the patterns 10. Incidentally, the large pattern 7 of the chip area 6 is composed of three concave portions 7b arranged in the vertical direction on the paper surface of FIG. 6A and four convex portions 7a arranged in total between the three concave portions 7b. It is configured. In FIG. 6A, reference numeral 8 is a small pattern.

  Since such a resin supply pattern 9 can form a wider resin supply pattern 9 than the stamper 1 in the above-described embodiment, the chip pattern 10 has a large recess to be filled with resin. For example, this is a particularly desirable mode when a relatively large recess 7b is formed, such as the recess 7b of the large pattern 7 shown in FIG.

Moreover, in the said embodiment, the resin supply pattern 9 formed in the outer peripheral part of the stamper 1 assumes what is formed in the flat surface of the same height as the resin supply pattern 9 formed between chip area | regions 6 mutually. However, in the present invention, a drain mechanism is provided in the resin supply pattern 9 formed on the outer peripheral portion of the stamper 1, and excess resin when the stamper 1 is pressed against the resin film 3 is discharged to the outside of the stamper 1. It can also be set as the structure to do.
Incidentally, as this drain mechanism, for example, there is a dummy pattern composed of a plurality of grooves whose one ends face the outer edge of the stamper 1.

In addition, the present invention may be configured to have a resin discharge pattern that receives excess resin when the stamper 1 is pressed against the resin film 3.
Next, FIG. 7A to be referred to is a plan view of the microstructure transfer stamper having a resin discharge pattern, and FIG. 7B is a resin supply pattern formed outside the chip region in the microstructure transfer stamper of FIG. FIG. 4C is a partial enlarged view showing a state of the resin discharge pattern, and FIG. 5C is a schematic view showing a state in which the chip pattern, the resin supply pattern, and the resin discharge pattern in the chip region of FIG.

As shown in FIGS. 7A and 7B, the stamper 1 has a plurality of chip regions 6 each having a chip pattern 10, and a resin supply pattern 9 is provided on the outer periphery of each chip region 6. A discharge pattern 13 is formed.
As shown in FIG. 7C, the resin discharge pattern 13 of the stamper 1 is formed with a recess having the same depth as the recess of the chip pattern 10 in the chip region 6. In addition, the resin supply pattern 9 is formed with a convex portion having the same height as the convex portion of the chip pattern 10 as in the above embodiment.

  According to such a stamper 1, when the stamper 1 is pressed against the resin film 3 (see FIG. 4A), the resin supply pattern 9 faces the chip pattern 10 formed in each chip region 6. Then, a predetermined volume of a photo-curable resin composition (resin) for forming the resin film 3 is supplied by flowing.

At this time, the resin discharge pattern 13 accepts excess resin in the chip region 6 and the resin supply pattern 9 and prompts discharge of excess resin in the chip region 6 and the resin supply pattern 9. Therefore, according to this stamper 1, as shown in FIG. 7C, the remaining film 12 formed on the resin film 3 becomes thinner and more uniform.
Note that the white portion of the stamper 1 shown in FIG. 7A is assumed to be a flat surface having the same height as the convex portion of the resin supply pattern 9. It is desirable that the flat surface having the same depth as the concave portion of the pattern 13 has a configuration that can facilitate the discharge of the resin.

Next, FIG. 8 referred to is a plan view showing a modification of the microstructure transfer stamper of FIG.
In the stamper 1 shown in FIG. 7A, a resin supply pattern 9 and a resin discharge pattern 13 are formed so as to individually surround the outer periphery of each chip region 6.
On the other hand, as shown in FIG. 8, the stamper 1 according to the modified example forms a plurality of columns so that the plurality of chip regions 6 are in contact with each other, and surrounds the columns for each column. 9 and the resin discharge pattern 13 may be formed.

  In the above embodiment, the pressurization of the stamper 1 against the resin film 3 is assumed to be a plane pressurization via the plate 5, but in the present invention, the pressure distribution is applied from the central portion to the edge of the stamper 1. It is also possible to employ spherical pressurization that pressurizes the stamper 1 so as to gradually decrease, roll pressurization that pressurizes the stamper 1 with a roll that rolls, and the like. In the above embodiment, the stamper 1 is pressurized via the plate 5 by the elevating mechanism. However, the present invention applies air pressurization that pressurizes the stamper 1 by feeding air into the pressurizing chamber provided on the back surface of the stamper 1. Can also be adopted.

Next, the present invention will be described more specifically with reference to examples.
Example 1
In Example 1, the microstructure was produced by transferring the pattern of the stamper 1 to the resin film 3 formed on the substrate 2 using the microstructure transfer apparatus A shown in FIG.
As the stamper 1, a material in which a fine pattern was directly drawn on an approximately disc-shaped glass having a diameter of 200 mm and a thickness of 0.725 mm by an EB drawing method was used. As shown in FIG. 2, the pattern is one in which a plurality of chip regions 6 are arranged.

  As shown in FIG. 3A, the chip pattern formed in the chip region 6 is configured to include a large pattern 7 and a small pattern 8, each of which has a line-and-space (lamellar) concave and convex portion. It is formed. Incidentally, the pattern size of the large pattern 7 is 300 μm at the maximum width (the maximum value of the full pitch defined by the interval between the convex portions), and the pattern size of the small pattern 8 is defined by the minimum width (the interval between the convex portions). The minimum value of the full pitch) was 200 nm. The depths of the large pattern 7 and the small pattern 8 were both set to 400 nm by etching. The resin supply pattern 9 was formed with the same convexity as the convexity of the large pattern 7 and the small pattern 8 (however, a flat pattern having no irregularities on the convexity).

The resin supply pattern 9 was formed on the outer periphery of the chip region 6. Specifically, it was formed in the range of 500 μm outside the scribe line in the chip region 6. Although not shown, the stamper 1 has a surplus outside the stamper 1 when the stamper 1 is pressed against the resin film 3 in the form of a substrate 2 on the outermost periphery (portion excluding the chip region 6 and the resin supply pattern 9). A dummy pattern for discharging the resin was formed. Incidentally, this dummy pattern was formed with a dot pattern in which a plurality of minute recesses were arranged, and had a full pitch (interval between recesses) of 5 μm, a dot diameter of 2.5 μm, and a recess depth of 400 nm.
Then, the surface (pattern forming surface) of the stamper 1 was subjected to a mold release process using OPTOOL DSX (manufactured by Daikin Industries), and the microstructure transfer apparatus A shown in FIG.

  A silicon wafer having a diameter of 100 mm and a thickness of 0.525 mm was used as the substrate 2 of the fine structure transfer apparatus A shown in FIG. The surface of the substrate 2 was subjected to an adhesion treatment with a coupling agent (KBM5103, manufactured by Shin-Etsu Silicone Co., Ltd.) in order to improve the adhesion with the resin film 3 shown in FIG.

As the resin film 3, it formed by apply | coating the following photocurable resin composition on the board | substrate 2 with a thickness of 100 nm.
Examples of the photo-curable resin composition include 10 parts by mass of urethane acrylate (manufactured by Shin-Nakamura Chemical Co., Ltd., UA-53H), 90 parts by mass of butyl acrylate (manufactured by Tokyo Chemical Industry), and a polymerization initiator (manufactured by Ciba, DAROCUR 1173). ) A mixture of 3 parts by weight was used.
The stamper 1 is fixed to the plate via stamper holding means such as a holding jig (not shown), and the substrate 2 on which the resin film 3 is formed is placed on the stage 4 via substrate holding means such as a vacuum suction device (not shown). Fixed to.

Next, in this example, the pattern of the stamper 1 was transferred to the resin film 3 on the substrate 2 using this microstructure transfer device A.
First, the plate 5 holding the stamper 1 was lowered and the stamper 1 was pressed against the resin film 3 to spread the resin film 3 on the substrate 2. Specifically, the stamper 1 is pressed against the resin film 3 until the thickness of the resin film 3 (see FIG. 4C) in contact with the resin supply pattern 9 (see FIG. 4C) becomes 50 nm or less. .

  Thus, resin is supplied to the chip pattern (large pattern 7 and small pattern 8) formed in the chip region 6 from the resin film 3 formed at a position corresponding to the large pattern 7 and the small pattern 8. The resin was also supplied from the resin film 3 formed at a position corresponding to the resin supply pattern 9.

  Next, ultraviolet rays UV (see FIG. 4C) was irradiated from a light source (not shown) installed on the back surface of the stamper 1 to cure the resin film 3. Thereafter, the stamper 1 was peeled from the substrate 2 side by raising the plate 5 (see FIG. 4D). As a result, a resin film 3 (see FIG. 4D) to which the pattern (fine structure) of the stamper 1 was transferred was obtained on the substrate 2.

  And when the pattern transcribe | transferred to the resin film 3 was measured with the optical microscope, the defect | deletion part was not recognized by the pattern transcribe | transferred to the resin film 3. FIG. That is, when the stamper 1 was pressed against the resin film 3, it was confirmed that the resin of the stamper 1 pattern was completely filled.

  Further, when part of the resin film 3 to which the pattern of the stamper 1 was transferred was scraped and observed with an atomic force microscope, the remaining film 12 of the large pattern 7 (see FIG. 4) extending from the center to the outer periphery of the substrate 2. (See (d)) was 30 to 40 nm, and the thickness of the remaining film 12 of the small pattern 8 from the center to the outer periphery of the substrate 2 was 20 to 30 nm. That is, it was confirmed that the thickness of the remaining film 12 was formed in the range of 20 to 40 nm over substantially the entire surface of the substrate 2 having a diameter of 100 mm.

(Example 2)
In the second embodiment, as shown in FIG. 5A, a fine structure transfer apparatus A is configured in the same manner as in the first embodiment except that the stamper 1 in which a plurality of chip regions 6 are arranged is used. Using the apparatus A, the pattern of the stamper 1 was transferred to the resin film 3 on the substrate 2 in the same manner as in Example 1. The width W1 of the resin supply pattern 9 in the vicinity of the central portion of the stamper 1 shown in FIG. 5A is 500 μm, and the width W3 of the resin supply pattern 9 near the outer periphery is 200 μm.

And when the pattern transcribe | transferred to the resin film 3 was measured with the optical microscope, the defect | deletion part was not recognized by the pattern transcribe | transferred to the resin film 3. FIG. That is, when the stamper 1 was pressed against the resin film 3, it was confirmed that the resin of the stamper 1 pattern was completely filled.
Further, when part of the resin film 3 to which the pattern of the stamper 1 was transferred was scraped and observed with an atomic force microscope, the remaining film 12 of the large pattern 7 (see FIG. 4) extending from the center to the outer periphery of the substrate 2. (See (d)) was 30 to 40 nm, and the thickness of the remaining film 12 of the small pattern 8 from the center to the outer periphery of the substrate 2 was 20 to 30 nm. That is, it was confirmed that the thickness of the remaining film 12 was formed in the range of 20 to 40 nm over substantially the entire surface of the substrate 2 having a diameter of 100 mm.

(Example 3)
In Example 3, as shown in FIG. 5A, the stamper 1 in which a plurality of chip regions 6 are arranged and having the chip regions 6 having the layout shown in FIG. 6 was used. Except for using this stamper 1, a fine structure transfer apparatus A is configured in the same manner as in the first embodiment, and the fine structure transfer apparatus A is used to apply a resin film 3 on the substrate 2 in the same manner as in the first embodiment. The stamper 1 pattern was transferred.

  And when the pattern transcribe | transferred to the resin film 3 was measured with the optical microscope, the defect | deletion part was not recognized by the pattern transcribe | transferred to the resin film 3. FIG. That is, when the stamper 1 was pressed against the resin film 3, it was confirmed that the resin of the stamper 1 pattern was completely filled.

  Further, when part of the resin film 3 to which the pattern of the stamper 1 was transferred was scraped and observed with an atomic force microscope, the remaining film 12 of the large pattern 7 (see FIG. 4) extending from the center to the outer periphery of the substrate 2. (See (d)) was 30 to 40 nm, and the thickness of the remaining film 12 of the small pattern 8 from the center to the outer periphery of the substrate 2 was 20 to 30 nm. That is, it was confirmed that the thickness of the remaining film 12 was formed in the range of 20 to 40 nm over substantially the entire surface of the substrate 2 having a diameter of 100 mm.

(Comparative example)
In the comparative example, in the stamper 1 shown in FIG. 2, the resin supply pattern 9 is not formed between the chip regions 6, that is, the chip regions 6 arranged in the horizontal direction in FIG. 1 are adjacent to each other through only the scribe line. The stamper 1 is used. Except for using this stamper 1, a fine structure transfer apparatus A is configured in the same manner as in the first embodiment, and the fine structure transfer apparatus A is used to apply a resin film 3 on the substrate 2 in the same manner as in the first embodiment. The stamper 1 pattern was transferred.

  Then, when the pattern transferred to the resin film 3 was measured with an optical microscope, the pattern transferred to the resin film 3 had a defect (defect). That is, it was confirmed that when the stamper 1 was pressed against the resin film 3, the pattern of the stamper 1 was not completely filled with resin.

  Next, in this comparative example, the photocurable resin composition was applied on the substrate 2 to a thickness of 100 nm to form the resin film 3. Then, the pattern of the stamper 1 was transferred to the resin film 3. When the pattern transferred to the resin film 3 was measured with an optical microscope, no defects were observed in the pattern transferred to the resin film 3, but the thickness of the remaining film 12 was 10 nm at the minimum. The thick part exceeded 80 nm. Further, the thickness of the remaining film 12 was not uniform over the entire surface of the substrate 2. In particular, the difference in the thickness of the remaining film 12 is significant between the middle and outer peripheral portions of the substrate 2 where the arrangement density of the chip regions 6 is different.

1 Fine structure transfer stamper (stamper)
2 Substrate 3 Resin film 4 Stage 5 Plate 6 Chip area 7 Large pattern 8 Small pattern 9 Resin supply pattern 10 Chip pattern 12 Residual film 13 Resin discharge pattern A Fine structure transfer device

Claims (9)

In a microstructure transfer stamper that presses a stamper having a fine pattern against a resin film formed on a substrate and transfers the pattern to the resin film,
The pattern of the stamper includes a plurality of chip regions, and the resin film is formed toward a chip pattern formed in each chip region when the stamper is pressed against the resin film. A microstructure transfer stamper characterized in that a resin supply pattern for supplying a predetermined volume of resin by flowing is provided on the outer periphery of each chip region. The microstructure transfer stamper according to claim 1,
The microstructure transfer stamper, wherein the chip pattern has at least two types of patterns having different pattern sizes. The microstructure transfer stamper according to claim 2,
The pattern is formed by repeating fine concave and convex portions, and
The pattern size is defined by an interval between adjacent convex portions,
At least two kinds of the patterns of the chip pattern are configured to include a large pattern having the largest pattern size and a small pattern having the smallest pattern size,
A microstructure transfer stamper, wherein a ratio between the pattern sizes in the large pattern and the small pattern is 100 times or more. The microstructure transfer stamper according to claim 3,
The resin supply pattern is formed of a convex portion having the same height as the convex portion of the chip pattern, and the surface area occupied by the convex portion of the resin supply pattern in plan view is more than the surface area occupied by the convex portion of the large pattern A fine structure transfer stamper characterized by being formed so as to be large. In the microstructure transfer stamper according to any one of claims 1 to 4,
The resin supply pattern is formed between the chip regions adjacent to each other, and the width of the resin supply pattern formed at the center of the microstructure transfer stamper is formed closer to the outside of the microstructure transfer stamper. A microstructure transfer stamper characterized in that it is formed wider than the width of the resin supply pattern. The microstructure transfer stamper according to claim 1,
When the stamper is pressed against the resin film, the pattern of the stamper accepts excess resin in the chip region and the resin supply pattern and promotes discharge of excess resin in the chip region and the resin supply pattern. A fine structure transfer stamper having a resin discharge pattern on an outer periphery of the resin supply pattern.   A fine structure transfer device comprising the fine structure transfer stamper according to claim 1. In a fine structure transfer method of pressing a stamper having a fine pattern against a resin film formed on a substrate and transferring the pattern to the resin film,
The pattern of the stamper is configured to include a plurality of chip regions, and when the stamper is pressed against the resin film, the pattern from the outer periphery of each chip region toward the chip pattern formed in each chip region. A fine structure transfer method, wherein a predetermined volume of resin for forming the resin film is flowed and supplied. The fine structure transfer method according to claim 8,
A fine structure transfer method, wherein when a stamper is pressed against the resin film, discharge of excess resin in the chip region and the resin supply pattern is promoted.

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