JP2015050443A - Microstructure transfer device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a microstructure transfer device capable of transferring a microstructure without breaking a stamper, with a simple structure.SOLUTION: The device comprises: a stamper holding tool 4 which holds a stamper 1 comprising a pattern surface having a microstructure pattern formed thereon such that the pattern surface faces a transfer target body; a vertically moving stage 9 capable of moving relative to the stamper holding tool 4 while the transfer target body having a resin 2 applied to the surface of a substrate 3 is placed on the vertically moving stage 9; and a pressure member 10 which is disposed on a side opposite the pattern surface of the stamper 1 and has a curved surface projecting toward the stamper 1. While the stamper 1 is bent along the curved surface of the pressure member 10, the stamper 1 is brought into contact with the resin applied onto the surface of the substrate 3 to transfer the pattern.

Description

  The present invention relates to a fine structure transfer apparatus for transferring a fine uneven shape of a stamper onto the surface of a transfer object.

  2. Description of the Related Art In recent years, semiconductor integrated circuits have been miniaturized, and in order to realize the fine processing, for example, when a pattern of a semiconductor integrated circuit is formed by a photolithography technique, high precision is achieved. On the other hand, the order of microfabrication approaches the wavelength of the exposure light source, and the improvement in pattern formation is reaching its limit. For this reason, an electron beam drawing technique, which is a kind of charged particle beam apparatus, has been used in place of the photolithography technique for higher accuracy.

  However, unlike the batch exposure method using a light source such as i-line or excimer laser, the pattern formation by the electron beam drawing technique takes more exposure (drawing) time as the number of patterns drawn by the electron beam increases. . Therefore, as the integration of the semiconductor integrated circuit proceeds, the time required for pattern formation becomes longer, and the throughput is remarkably deteriorated.

  As another pattern forming technique, an imprint technique is known in which a predetermined stamper is embossed and its surface shape is transferred. In this imprint technique, a stamper having unevenness corresponding to the unevenness of a pattern to be formed is embossed on a transfer target obtained by forming a resin layer on a predetermined substrate, for example. A fine structure having a width of 25 nm or less can be formed in the resin layer of the transfer object. The resin layer on which such a pattern is formed is composed of a thin film layer formed on the substrate and a pattern composed of convex portions formed on the thin film layer.

  The etching accuracy of the substrate portion is affected by the thickness distribution in the plane direction of the thin film layer. For example, if a transferred object having a thickness variation of 50 nm, which is the difference between the maximum thickness and the minimum thickness, is etched at a depth of 50 nm, the substrate is etched at a thin film layer. However, there are cases where etching is not performed in thick portions. Therefore, the resin layer formed on the substrate needs to be thin and uniform in the surface direction.

  Conventionally, in the imprint technique, a flat stamper and a flat transfer target are pressed to form a pattern. However, when the transfer target and the stamper come into contact with each other, both the entire surfaces come into contact with each other almost simultaneously. For this reason, a region where pressure is locally applied at the time of contact between the transfer target and the stamper is generated, and the flow of the resin may be hindered or bubbles may be involved in the resin. Thereby, a part of the pattern formation film obtained becomes non-uniform. This tendency becomes more prominent as the transfer area increases.

  Therefore, in order to increase the fluidity of the resin, prevent the entrainment of bubbles, and form a uniform pattern forming film, for example, as shown in Patent Document 1, the outer periphery of the stamper is pushed in with a pressure jig. Thus, there is known a transfer method in which the stamper is mechanically bent so as to have a convex shape in the direction of the transfer target and is brought into contact with the transfer target. In this transfer method, after the convex portion of the stamper comes into contact with the center portion of the transfer object, the contact area is gradually expanded toward the outer peripheral portion. As a result, the fluidity of the resin is improved and the entrainment of bubbles in the pattern forming film (resin) is prevented.

  In Patent Document 2, a method is employed in which a gap is formed between the stamper back surface and the stamper holder, and the stamper is bent into a convex shape by injecting compressed air into the gap.

JP 2006-303292 A JP 2010-240928 A

  However, in Patent Document 1, since stress is concentrated locally on the outer periphery of the stamper, there is a possibility that the stamper is damaged while the transfer is repeated.

  Moreover, in patent document 2, since it is the structure which bends a stamper with an air pressure, it is restricted to what forms a stamper with soft materials, such as resin. In addition, a compressor for supplying compressed air is required, resulting in a problem that the apparatus becomes large.

  Therefore, the present invention provides a fine structure transfer apparatus capable of transferring without damaging the stamper with a simple structure.

  In order to solve the above problems, a microstructure transfer device of the present invention includes a stamper holding unit that holds a stamper having a pattern surface on which a microstructure pattern is formed, and the pattern surface faces a transfer target; An elevating stage on which a transfer body is placed and movable relative to the stamper holding portion, and a pressing member disposed on the opposite side of the pattern surface of the stamper and having a curved surface protruding toward the stamper, Pattern transfer is performed by bringing the stamper into contact with the resin applied to the surface of the transfer object in a state where the stamper is bent following the curved surface of the pressing member.

  According to the present invention, it is possible to provide a fine structure transfer device that can prevent damage to a stamper and perform high-precision large-area transfer.

  Problems, configurations, and effects other than those described above will be clarified by the following description of embodiments.

1 is a schematic configuration diagram of a microstructure transfer device according to an embodiment of the present invention. It is a top view which shows the positional relationship of the stamper in FIG. 1, and a stamper holding jig. It is process drawing explaining the transfer method using the fine structure transfer apparatus shown in FIG. 1, and is a figure which shows the state which installed the stamper and the to-be-transferred body. It is process drawing explaining the transfer method using the fine structure transfer apparatus shown in FIG. 1, and is a figure which shows the state which the stamper back surface contacted the press member. It is process drawing explaining the transfer method using the fine structure transfer apparatus shown in FIG. 1, and is a figure which shows the state which the stamper curved along the curved surface of the press member. It is process drawing explaining the transfer method using the fine structure transfer apparatus shown in FIG. 1, and is a figure which shows the state which the pattern surface of the stamper contacted the to-be-transferred body. It is process drawing explaining the transfer method using the fine structure transfer apparatus shown in FIG. 1, and is a figure which shows the to-be-transferred body after pattern transfer. It is a SEM image of the uneven | corrugated pattern transcribe | transferred on the surface of the to-be-transferred body. It is a schematic block diagram of the fine structure transfer apparatus which concerns on one Example of this invention.

  FIG. 1 shows a schematic configuration of the microstructure transfer apparatus of the present invention. The fine structure transfer apparatus of the present invention includes a lifting / lowering stage 9 on which a transfer material coated with a resin 2 is placed on the surface of a disk-shaped substrate 3, and a stamper 1 on which a concave / convex pattern (fine structure) is formed. A stamper holding jig 4 that holds the transfer body so as to face the transfer body, a pressing member 10 that presses the back surface of the stamper 1 (a face opposite to the face that faces the transfer body) via the upper buffer layer 7a, and a pressing member 10 An upper pedestal 8 that holds the upper plate 11 to which the stamper is attached, and a stamper that is attached to the upper surface of the stamper holding jig 4 and adjusts the pressing force applied to the back surface of the stamper 1 by the pressing member 10 by contacting the lower surface of the upper pedestal 8. The position control pin 5 includes a stamper holding spring 6 that connects the upper surface of the elevating stage 9 and the lower surface of the stamper holding jig 4. The resin 2 applied to the surface of the substrate 3 is a photocurable resin, a thermoplastic resin, or a thermosetting resin. Hereinafter, the photocurable resin will be described as an example.

  The stamper position control pin 5 has, for example, an aluminum pin shape in which a screw groove is formed, and can be adjusted to a desired height by fitting with a screw hole provided on the upper surface of the stamper holding jig 4. It has become. In addition, the transfer object having the surface of the substrate 3 coated with the resin 2 which is a photocurable resin is placed on the lifting stage 9 through the lower buffer layer 7b, and the stamper 1 held by the stamper holding jig 4 When the elevating stage 9 is raised while the parallelism is maintained, the concave / convex pattern formed on the surface of the stamper 1 and the resin 2 to be transferred can be brought into contact with each other. The elevating stage 9 is installed on the lower base 14, the upper base 8 is installed on the upper base 15, and the upper base 15 and the lower base 14 move up and down relatively along the guide 13. Thereby, the parallelism between the stamper 1 and the transfer target is maintained.

  The contact surface of the pressing member 10 with the upper buffer layer 7a has a curved surface shape that is approximated as a part of a spherical surface having a large radius of curvature, and is in contact with the back surface of the stamper 1 from the outer periphery of the pressing member 10 toward the center. It has a shape with a small interval. The radius of curvature that defines a part of the spherical surface is not necessarily uniform. For example, the radius of curvature on the center side of the pressing member 10 is large and the radius of curvature on the outer peripheral side is small. Also good. Further, the contact surface of the pressing member 10 with the upper buffer layer 7a may be approximated as a shape obtained by cutting a part of the spherical surface. That is, only the central portion of the spherical surface is cut in parallel with the back surface (flat surface) of the stamper 1, that is, the center portion has a flat circular shape and the distance from the back surface of the stamper 1 increases toward the outer peripheral portion. It may be a curved surface shape. Although details will be described later, the stamper holding jig 4 is raised until the upper end of the stamper position control pin 5 comes into contact with the lower surface of the upper pedestal 8, whereby the stamper 1 bends following the curved surface shape of the pressing member 10. The amount of deflection of the stamper 1 can be adjusted to a desired value by adjusting the height of the stamper position control pin 5.

  Here, the positional relationship between the stamper 1 and the stamper holding jig 4 will be described. FIG. 2 is a top view showing the positional relationship between the stamper and the stamper holding jig. A portion indicated by a dotted line indicates the shape of the mounting surface of the stamper 1 of the stamper holding jig 4, and FIG. 1 described above is a cross-sectional view taken along line AA in FIG. As shown in FIG. 2, the stamper 1 having a quadrangular shape is held with its four corners placed on a stamper holding jig 4. A stamper position control pin 5 is attached to each stamper holding jig 4. Although the outer shape of the stamper 1 is a square shape, it is not limited to this and may be a disk shape. In this case, the stamper holding jigs 4 may be arranged at four locations that pass through the center of the disk-shaped stamper 1 and are orthogonal to each other.

  Here, the fine structure of the concavo-convex pattern formed on the surface of the stamper 1 refers to a structure formed in a size of nanometer to micrometer. Specifically, a dot pattern in which a plurality of minute protrusions are regularly arranged, a pattern in which minute recesses are regularly arranged, on the contrary, a lamella structure (line) in which a plurality of stripes are regularly arranged And space pattern). As the material of the stamper 1, a material made of a light transmissive material is used. In particular, those having strength and workability such as glass, quartz, and resin are preferable. The fine structure formed in the stamper 1 is formed by photolithography, focused ion beam lithography, electron beam (EB) drawing method, nanoimprint method, or the like. The formation method of these fine structures can be appropriately selected according to the processing accuracy of the fine pattern to be formed. Further, the outer shape of the substrate 3 is not limited to a disk shape, but may be a rectangular shape such as a square or a rectangle.

  The stamper holding jig 4 holds the outer periphery of the stamper 1 as described above so that the stamper holding jig 4 and the resin 2 do not come into contact when the resin 2 applied to the surface of the substrate 3 and the stamper 1 come into contact with each other. Arranged to do. Therefore, the length of the longest part of the stamper 1 needs to be larger than the length of the longest part of the substrate 3. In this embodiment, the stamper 1 is held by the stamper holding jig 4, but the relationship between the stamper 1 and the resin 2 may be reversed. In other words, the stamper 1 may be placed on the lifting stage 9 via the lower buffer layer 7 b and the substrate 3 may be held by the stamper holding jig 4. For example, such a configuration is used when a replica of the stamper 1 which is a master (master) is created. In this case, the substrate 3 uses a light transmissive material, and the light transmissive property of the stamper 1 is not limited.

  Further, a release layer for promoting peeling from the resin 2 may be formed on the surface of the stamper 1. The release layer may be formed using an existing fluorine-based material or a material that reduces adhesion of a resin such as silicone, hydrocarbon chain, diamond-like carbon, or metal.

  The resin 2 which is a photocurable resin is composed of a mixture of monomers and oligomers having a photopolymerizable functional group, such as a compound having a (meth) acryloyl group, a vinyl ether group, an epoxy group, and an oxetanyl group. Chosen from.

  Examples of those having a (meth) acryloyl group at the terminal include poly (meth) acrylate methyl, ethoxylated bisphenol A type acrylate, aliphatic urethane acrylate, polyester acrylate, polyethylene terephthalate, polystyrene, polycarbonate, and acrylic modified alicyclic There are formula epoxide, bifunctional alcohol ether type epoxide, acrylic silicone, acrylic dimethylsiloxane and the like.

  Monomers can also be used, and as a material having a (meth) acryloyl group at the terminal, methoxytriethylene glycol (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, isobornyl (meth) acrylate, octoxypolyethylene glycol ( (Meth) acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, isostearyl (meth) acrylate, lauryl (meth) acrylate, polyethylene glycol di (meth) acrylate, 1,10-decanediol di (meth) acrylate, cyclo Decandimethanol di (meth) acrylate, ethoxylated 2-methyl-1,3-propanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, 2-hydroxy-3-acryloxypropyl methacrylate, 1,6 hex Diol di (meth) acrylate, 1,9 nonanediol di (meth) acrylate, dipropylene glycol diacrylate, tripropylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, ethylene glycol di (meth) acrylate, reethylene glycol Di (meth) acrylate, triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, ethoxylated isocyanuric acid triacrylate, ethoxylated trimethylolpropane tri (meth) acrylate, trimethyl pool propane tri (meth) acrylate , Propoxylated trimethylolpropane triacrylate, pentaerythritol triacrylate, ethoxylated pentaerythritol tetra (meth) acrylate, dito Methylolpropane tetra (meth) acrylate, propoxylated pentaerythritol tetra (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, cyclohexyl (meth) acrylate, cyclopentanyl (meth) acrylate, cyclo Examples thereof include, but are not limited to, pentenyl (meth) acrylate and adamantchel (meth) acrylate.

  Examples of the organic component having a vinyl ether group include ethylene glycol divinyl ether, diethylene glycol divinyl ether, triethylene glycol divinyl ether, tetraethylene glycol divinyl ether, butanediol divinyl ether, hexanediol divinyl ether, cyclohexanedimethanol divinyl ether, and isophthalic acid di ( 4-vinyloxy) butyl, di (4-vinyloxy) butyl glutarate, di (4-vinyloxy) butyltrimethylolpropane trivinyl ether, 2-hydroxyethyl vinyl ether, hydroxybutyl vinyl ether, hydroxyhexyl vinyl ether, vinyl silicone, vinyl syl succinate Examples include sesquioxane and the like.

  Epoxy group-containing alicyclic epoxide, modified alicyclic epoxide, bisphenol A epoxide, hydrogenated bisphenol A epoxide, bisphenol F epoxide, novolac epoxide, aliphatic cyclic epoxide, naphthalene epoxide, biphenyl Type epoxide, bifunctional alcohol ether type epoxide 1,6-hexanediol glycidyl ether, 1,4-butanediol glycidyl ether, epoxy silicone, epoxy silsesquioxane and the like. Examples of those having an oxetanyl group include 3-ethyl-3-hydroxymethyloxetane, 1,4-bis [(3-ethyl-3-oxetanylmethoxy) methyl] benzene, 3-ethyl-3- (phenoxymethyl) Oxetane, di [1-ethyl (3-oxetanyl)] methyl ether, 3-ethyl-3- (2-ethylhexyloxymethyl) oxetane, 3-ethyl-3-{[3- (triethoxysilyl) propoxy] methyl } Examples include oxetane, oxetanylsilsesquioxane, phenol novolac oxetane and the like.

  In addition, the resin 2 of the present invention contains a polymerization initiator. In order to polymerize a (meth) acryloyl group and a vinyl ether group, benzyl ketal, α-hydroxyketone, α-aminoketone, acylphosphine oxide are used. , Titanosenone, oxyphenyl acetate, and oxime ester are used.

  Specifically, 2,2-dimethoxy-1,2-diphenylethane-1-one, 1-hydroxy-cyclohexyl-phenyl-ketone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, Benzophenone, 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1-propan-1-one, 2-methyl-1 [4- (methylthio) phenyl] -2-mori Forinopropan-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethyl-pentyl Examples include phosphine oxide, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, and the like.

  Furthermore, as a polymerization initiator for polymerizing a vinyl ether group, an epoxy group, and an oxetanyl group, there is no particular limitation as long as it is an electrophile, has a cation generation source, and can cure organic components by light, A well-known photocationic polymerization initiator can be used. Examples thereof include iron-allene complex compounds, aromatic diazonium salts, aromatic iodonium salts, aromatic sulfonium salts, pyridinium salts, aluminum complexes / silyl ethers, protonic acids, Lewis acids, and the like.

  These can be applied alone, but can also be used in combination of two or more. In addition, a known photopolymerization initiator can also be applied.

   Returning to FIG. 1, a light source (not shown) is installed above the upper plate 11 and the upper base 15. The resin 2 is cured by irradiating the resin 2 to be transferred with irradiation light from a light source for a predetermined time. An LED lamp, a high-pressure mercury lamp, or the like is used as the light source. Here, in order to enable light irradiation to the resin 2, the upper buffer layer 7a, the pressing member 10, the upper plate 11, and the upper base 15 are made of a light transmissive material. Transparent members such as glass, resin, and silicone rubber are used. However, it is preferable that the upper plate 11 has strength, and a glass material is preferable. The upper base 15 is not necessarily made of a light transmissive material, and may be formed of a metal material or the like as long as it has a structure corresponding to the region of the upper plate 11.

  When the contact surface of the pressing member 10 with the upper buffer layer 7a is approximated as a part of a spherical surface, the curvature radius is preferably about 1000 mm to 40000 mm, and preferably about 10000 mm to 40000 mm. The radius of curvature is appropriately selected according to the outer shape of the substrate 3. The smaller the radius of curvature of the pressing member 10, the easier the bending of the stamper 1. However, the larger the curvature of the stamper 1, the more difficult it is to contact the outermost peripheral portion of the substrate 3. Therefore, it is desirable to select according to the outer shape of the substrate 3.

  Next, a transfer method using the fine structure transfer apparatus shown in FIGS. 1 and 2 will be described. FIG. 3 is a process diagram for explaining a transfer method using the microstructure transfer apparatus shown in FIG. In FIG. 3, the guide 13, the lower base 14 and the upper base 15 shown in FIG. 1 are omitted for convenience.

  In advance, the resin 2 is applied to the surface of the substrate 3 by a dispensing method or a spin coating method. The dispensing method is a method in which the resin 2 is dropped on a plurality of locations on the surface of the substrate 3, and the spin coating method is a method in which a uniform film is formed by centrifugal force by dropping the resin 2 while rotating the substrate 3. is there. As shown in FIG. 3A, the substrate 3 coated with the resin 2 is placed on the lower buffer layer 7 b installed on the elevating stage 9. Thereafter, the stamper 1 is mounted on the stamper holding jig 4 so that the pattern on which the fine structure is formed faces the resin 2. At this time, the stamper position control pin 5 is adjusted to a desired height.

  Next, the elevating stage 9 is raised until the curved surface of the pressing member 10 comes into contact with the upper buffer layer 7a (FIG. 3B). As shown in FIG. 3B, when the top portion (center portion) of the pressing member 10 approximated as a part of a spherical surface comes into contact with the upper buffer layer 7a, the upper end of the stamper position control pin 5 and the upper base 8 There is a gap G between the lower surface of each of the two. Thereafter, the lift stage 9 is further raised, and the state in which the upper end of the stamper position control pin 5 is in contact with the lower surface of the upper base 8 is shown in FIG. At this time, the stamper 1 is pushed into the surface side of the pressing member 10 by moving upward by the distance of the gap G from the position shown in FIG. Thereby, before the stamper 1 contacts the resin 2, the stamper 1 bends in advance following the curved surface shape of the pressing member 10 via the upper buffer layer 7a. The fine structure pattern surface of the stamper 1 is bent so that the distance from the resin 2 applied to the substrate 3 increases from the center to the outer periphery, and the amount of bending (the curvature of the stamper 1) is the stamper position control pin. It is controlled by adjusting the height of 5, ie, adjusting the gap G.

  When the elevating stage 9 is raised from the state of FIG. 3C, the central portion of the fine structure pattern surface of the stamper 1 first comes into contact with the resin 2. When the elevating stage 9 is further raised, the bending of the stamper 1 is eliminated, and the outer peripheral portion of the fine structure pattern surface of the stamper 1 comes into contact with the resin 2 and is pressed (FIG. 3D). In this way, the resin 2 applied to the surface of the substrate 3 to be transferred comes into contact with the fine structure pattern surface of the stamper 1 from the central portion first, and sequentially contacts the outer peripheral portion, thereby transferring the transferred material. The air present at the interface between the body and the stamper 1 is pushed out to the outer peripheral portion of the transfer body. As a result, it is possible to suppress the incorporation of bubbles into the resin 2.

  In the state shown in FIG. 3D, the resin 2 is cured by passing through the upper plate 11, the pressing member 10, the upper buffer layer 7a, and the stamper 1 from a light source (not shown) and irradiating the resin 2 with light for a predetermined time. To peel off the transfer target after the resin 2 is cured, the lift stage 9 is lowered to the state shown in FIG. 3A, and is removed from the stamper holding jig 4 while the transfer target is in close contact with the stamper 1. The transferred object after the pattern transfer is peeled off from the stamper 1 by a peeling step that is not performed. As a result, a transfer body onto which the reverse pattern P of the fine structure pattern of the stamper 1 shown in FIG.

  In the present embodiment, the case where a photocurable resin is used for the resin 2 has been described. However, when a thermoplastic resin is used instead of the photocurable resin, the thermoplastic resin applied to the surface of the substrate 3 is subjected to glass transition. After being heated to a temperature higher than that, the transferred object to which the reverse pattern P is similarly transferred can be obtained by cooling in the state shown in FIGS. 3C to 3D. Further, when a thermosetting resin is used instead of the photocurable resin, the transferred pattern in which the reverse pattern P is similarly transferred by heating until reaching the polymerization temperature condition after the state shown in FIG. You can get a body. In this case, it can be realized by providing a heating and / or cooling mechanism in the microstructure transfer apparatus shown in FIG.

  The transfer target to which the fine structure (fine concavo-convex pattern) is transferred by the fine structure transfer apparatus according to the present embodiment as described above can be applied to an information recording medium such as a magnetic recording medium or an optical recording medium. In addition, this transferred body can be applied to large-scale integrated circuit parts, optical parts such as lenses, polarizing plates, wavelength filters, light emitting elements, and optical integrated circuits, and biodevices such as immunoassay, DNA separation, and cell culture. Is possible. In immunoassay, DNA separation, and the like, a fine flow path is formed on a substrate, and a fine flow path can be obtained by transferring a fine structure pattern (flow path shape) formed on the stamper 1.

  Examples will be specifically described below.

  In this example, the microstructure transfer apparatus shown in FIG. 1 was used, and a glass plate having a thickness of 0.7 mm and a 150 mm square was used as the stamper 1. Further, as the fine structure pattern of the stamper 1, a line and space (lamella structure) having a pattern height of 120 nm, a pattern pitch of 150 nm, and a line width of 55 nm was formed. The fine pattern of the stamper 1 is formed by preparing a master (master) in which a line and space having the pattern height, pattern pitch and line width is formed by electron beam lithography (EB) on a silicon wafer having a diameter of 200 mm. It was formed by transferring the master pattern to the resin applied to the glass plate by the nanoimprint method.

  A silicon wafer having a thickness of 0.525 mm and a diameter of 100 mm was used as the substrate 3, and an acrylic photocurable resin composition was used as the resin 2. The stamper holding jig 4 was used by processing polyetheretherketone (PEEK). The stamper position control pin 5, the upper pedestal 8, and the elevating stage 9 were used by processing aluminum. A transparent silicone rubber having a thickness of 10 mm was used for the upper buffer layers 7a and 7b. The pressing member 10 and the upper plate 11 were used by processing quartz having a thickness of 20 mm. The pressing member 10 was polished into a spherical shape so that the radius of curvature was 10,000 mm, and a UV light source (not shown) was installed on the upper portion of the upper plate 11. A stamper holding spring 6 having a spring constant of 1 N / m was used, and an elevator stage 9 was provided with a servo motor and a load cell (not shown) below, and the elevator stage 9 was moved up and down by the servo motor.

  Next, a fine structure transfer method using this fine structure transfer apparatus will be described. In this embodiment, the resin 2 is applied on the substrate 3 by spin coating so as to have a film thickness of 75 nm, and is placed on the lower buffer layer 7b. Further, the stamper 1 is placed on the stamper holding jig 4 so that the fine structure pattern surface on which the line and space is formed faces the resin 2 downward. At this time, the stamper holding jig 4 holds the four portions of the end of the pattern forming surface of the stamper 1 in contact with each other by 5 mm. (FIG. 3 (a)).

  Next, the elevating stage 9 is raised at 5 mm / sec, and the upper buffer layer 7a and the back surface of the stamper 2 are brought into contact with each other. (FIG. 3B). Further, the elevating stage 9 is raised at 0.5 mm / sec until the upper end of the stamper position control pin 5 contacts the lower surface of the upper base 8. At this time, the height of the stamper position control pin 5 is set so that the position of the stamper 1 is 0.5 mm higher than the position of the upper buffer layer 7a, that is, the stamper position control is performed so that the gap G is 0.5 mm. Adjust the height of pin 5. As a result, the stamper 1 and the upper buffer layer 7a are deformed into a spherical shape so as to protrude downward, following the curved surface shape of the pressing member 10. (FIG. 3C).

  Furthermore, the elevating stage 9 is raised at 0.1 mm / sec, raised until the center part of the stamper 1 and the substrate 3 comes into contact, and further the elevating stage 9 is raised at 0.1 mm / sec until the load reaches 6 kN, The stamper 1 and the entire surface of the substrate 3 are brought into contact with each other and pressed for 20 seconds (FIG. 3D). At this time, when the spread of the resin 2 was visually observed, it was confirmed that the resin 2 spread from the central portion to the outer peripheral portion. From the upper part of the upper plate 11, 300 mJ / cm 2 of ultraviolet light is irradiated for a predetermined time to cure the resin 2. After the resin 2 is cured, the stamper 1 integrated with the substrate 3 is transported to a peeling unit (not shown), and the stamper 1 and the substrate 3 are peeled off, thereby transferring the transferred object having the pattern P transferred to the resin 2 on the substrate 3. Is obtained (FIG. 3 (e)).

  FIG. 4 is an SEM (Scanning Electron Microscope) image of the pattern P transferred onto the surface of the transfer object, and it can be confirmed that a line and space having a pattern pitch of 150 nm and a line width of 55 nm has been transferred. Further, when the pattern height and the remaining film thickness of the pattern P were evaluated by AFM (Atomic Force Microscope) every 1 mm from the outermost periphery to the center, the pattern height was 115 ± 3 nm, and the remaining film thickness was It was confirmed that the film was formed at 8 ± 3 nm. That is, the variation in the pattern height and the variation in the remaining film thickness are both ± 3 nm, the defect rate of the transfer area is 5% or less, and there is no bubble entrainment defect with a diameter of 1 mm or more, and highly accurate pattern transfer was confirmed. .

  In this embodiment, the stamper 1 has an outer shape of 170 mm square, the substrate 3, a silicon wafer having a thickness of 0.625 nm and a diameter of 200 mm, and the curvature radius of the pressing member 10 is changed to 5000 mm. The other conditions are the same as in the first embodiment. Under the conditions, the line and space pattern formed on the stamper 1 was transferred to the resin 2 on the substrate 3. When the pattern height and the remaining film thickness of the pattern P of the transferred object obtained were evaluated by AFM every 1 mm from the outermost peripheral part to the central part, the pattern height was 113 ± 5 nm and the remaining film thickness was 7 ± 4 nm. It was confirmed that it was done. In other words, the variation in pattern height is ± 5 nm, the variation in remaining film thickness is ± 4 nm, the defect rate of the transfer area is 5% or less, and there are no entrainment defects of bubbles with a diameter of 1 mm or more. It was done.

In this embodiment, the substrate 3 is made of a silicon wafer having a thickness of 0.28 nm and a diameter of 50 mm, the radius of curvature of the pressing member 10 is changed to 40000 mm, and other conditions are the same as those of the first embodiment. A line and space pattern formed on the stamper 1 was transferred to FIG.
When the pattern height and the remaining film thickness of the pattern P of the transferred object obtained were evaluated by AFM every 1 mm from the outermost peripheral part to the central part, the pattern height was 113 ± 5 nm and the remaining film thickness was 7 ± 4 nm. It was confirmed that it was done. In other words, the variation in pattern height is ± 5 nm, the variation in remaining film thickness is ± 4 nm, the defect rate of the transfer area is 5% or less, and there are no entrainment defects of bubbles with a diameter of 1 mm or more. It was done.

  In this embodiment, the pressing member 10 is formed on the stamper 1 on the resin 2 on the substrate 3 under the same conditions as in the first embodiment except that the radius of curvature of the pressing member 10 is 1000 mm and the thickness of the upper buffer layer 7a is 15 mm. The transferred line and space pattern was transferred. When the pattern height and the remaining film thickness of the pattern P of the transferred object obtained were evaluated by AFM every 1 mm from the outermost peripheral part to the central part, the pattern height was 113 ± 5 nm and the remaining film thickness was 7 ± 4 nm. It was confirmed that it was done. That is, the variation in pattern height is ± 5 nm, the variation in remaining film thickness is ± 4 nm, the defect rate of the transfer area is 5% or less, and there are no entrainment defects of bubbles with a diameter of 1 mm or more, and the pattern transfer is highly accurate. Was confirmed.

  In the present embodiment, the condition is changed so that the thickness of the upper buffer layer 7a is 5 mm and the height of the stamper position control pin 5 is 0.3 mm higher than the position of the upper buffer layer 7a, that is, the gap G is 0.3 mm. The line and space pattern formed on the stamper 1 was transferred to the resin 2 on the substrate 3 under the same conditions as in Example 1. When the pattern height and the remaining film thickness of the pattern P of the transferred object obtained were evaluated by AFM every 1 mm from the outermost peripheral part to the central part, the pattern height was 113 ± 5 nm and the remaining film thickness was 7 ± 4 nm. It was confirmed that it was done. That is, the variation in pattern height is ± 5 nm, the variation in remaining film thickness is ± 4 nm, the defect rate of the transfer area is 5% or less, and there are no entrainment defects of bubbles with a diameter of 1 mm or more, and the pattern transfer is highly accurate. Was confirmed.

  In the present embodiment, the condition of the resin 2 on the substrate 3 is changed under the same conditions as in the first embodiment except that the upper buffer layer 7a has a thickness of 5 mm and the spring constant of the stamper holding spring 6 is changed to 0.5 N / m. A line-and-space pattern formed on the stamper 1 was transferred. When the pattern height and the remaining film thickness of the pattern P of the transferred object obtained were evaluated by AFM every 1 mm from the outermost peripheral part to the central part, the pattern height was 113 ± 5 nm and the remaining film thickness was 7 ± 4 nm. It was confirmed that it was done. That is, the variation in pattern height is ± 5 nm, the variation in remaining film thickness is ± 4 nm, the defect rate of the transfer area is 5% or less, and there are no entrainment defects of bubbles with a diameter of 1 mm or more, and the pattern transfer is highly accurate. Was confirmed.

  In this embodiment, the microstructure transfer apparatus shown in FIG. 5 is used instead of the microstructure transfer apparatus shown in FIG. 1 used in Embodiment 1, and the rest of the resin 2 on the substrate 3 is used under the same conditions as in Embodiment 1. A line-and-space pattern formed on the stamper 1 was transferred. Here, the microstructure transfer apparatus shown in FIG. 4 is different from the first embodiment in that the upper buffer layer 7a is not provided and the material of the pressing member 10 is a transparent silicone rubber. When the pattern height and the remaining film thickness of the pattern P of the transferred object obtained were evaluated by AFM every 1 mm from the outermost peripheral part to the central part, the pattern height was 114 ± 3 nm and the remaining film thickness was 6 ± 5 nm. It was confirmed that it was done. That is, the variation in pattern height is ± 3 nm, the variation in remaining film thickness is ± 5 nm, the defect rate of the transfer area is 5% or less, and there is no entrainment defect of bubbles with a diameter of 1 mm or more. Was confirmed.

  In the present embodiment, a white plate glass having a diameter of 150 mm and a thickness of 0.7 mm is used as the substrate 3, an aluminum layer is formed on one side of the substrate 3 by sputtering to 150 nm, and the aluminum layer formed on one side of the substrate 3 is The difference from Example 1 is that the adhesion treatment was performed with KBM5103 (manufactured by Shin-Etsu Chemical Co., Ltd.). The other conditions were the same as in Example 1, and the line and space pattern formed on the stamper 1 was transferred to the resin 2 on the substrate 3. When the pattern height and the remaining film thickness of the pattern P of the transferred object obtained were evaluated by AFM every 1 mm from the outermost peripheral part to the central part, the pattern height was 114 ± 3 nm and the remaining film thickness was 6 ± 5 nm. It was confirmed that it was done. That is, the variation in pattern height is ± 3 nm, the variation in remaining film thickness is ± 5 nm, the defect rate of the transfer area is 5% or less, and there is no entrainment defect of bubbles with a diameter of 1 mm or more. Was confirmed.

  In order to compare with the above-described Example 1 to Example 8, pattern transfer was similarly performed and evaluated in the following Comparative Examples 1 to 3.

  As Comparative Example 1, the fine structure transfer apparatus shown in FIG. 1 was used as in Example 1, a flat glass plate was used in place of the pressing member 10, and the other conditions were the same as in Example 1 except that the substrate 3 The line and space pattern formed on the stamper 1 was transferred to the upper resin 2. When the pattern height and the remaining film thickness of the pattern P of the transferred object thus obtained were evaluated by AFM every 1 mm from the outermost peripheral part to the central part, the pattern height was 115 ± 3 nm and the remaining film thickness was 20 ± 10 nm. It was confirmed that it was done. That is, the variation in the pattern height was ± 3 nm, the variation in the remaining film thickness was ± 10 nm, the defect rate of the transfer area was 10% or more, and three bubble entrapment defects having a diameter of 1 mm or more occurred.

  Further, as Comparative Example 2, using the fine structure transfer apparatus shown in FIG. 1 as in Example 1, the stamper holding jig 4 is removed and the stamper 1 is mounted on the resin 2 formed on the substrate 3. This is different from the first embodiment in that the pattern transfer is performed. That is, the present comparative example is different from the first embodiment in that pattern transfer is performed without previously bending the stamper 1 before contacting the resin 2 on the substrate 3. Otherwise, the line and space pattern formed on the stamper 1 was transferred to the resin 2 on the substrate 3 under the same conditions as in Example 1. When the pattern height of the pattern P and the remaining film thickness of the obtained transferred object were evaluated by AFM every 1 mm from the outermost peripheral part to the central part, the pattern height was 115 ± 3 nm and the remaining film thickness was 9 ± 7 nm. It was confirmed that it was done. That is, the variation in the pattern height was ± 3 nm, the variation in the remaining film thickness was ± 7 nm, the defect rate of the transfer area was 10% or more, and four bubble entrapment defects having a diameter of 1 mm or more were generated.

  Further, as Comparative Example 3, the microstructure transfer device shown in FIG. 1 is used as in Example 1, and the stamper position is set so that the height of the stamper 1 is the same as that of the upper buffer layer 7a, that is, the gap G is zero. The difference from the first embodiment is that the height of the control pin 5 is adjusted. That is, this comparative example is different from the first embodiment in that pattern transfer is performed without previously bending the stamper 1 before contacting the resin 2 on the substrate 3 as in the second comparative example. Otherwise, the line and space pattern formed on the stamper 1 was transferred to the resin 2 on the substrate 3 under the same conditions as in Example 1. When the pattern height of the pattern P and the remaining film thickness of the transferred object thus obtained were evaluated by AFM every 1 mm from the outermost peripheral part to the central part, the pattern height was 115 ± 3 nm and the remaining film thickness was 9 ± 6 nm. It was confirmed that it was done. That is, the variation in the pattern height was ± 3 nm, the variation in the remaining film thickness was ± 6 nm, the defect rate of the transfer area was 10% or more, and three bubble entrapment defects having a diameter of 1 mm or more occurred.

  As mentioned above, Example 1 to Example 8 and Comparative Example 1 to Comparative Example 3 are summarized. In any of Example 1 to Example 8, it is possible to suppress the defect rate of the transfer area to 5% or less, and to suppress the occurrence of entrainment defects of bubbles having a diameter of 1 mm or more. This is because the stamper 1 having a curved surface shape, which is common to the first to eighth embodiments, bends the stamper 1 following the curved surface shape of the pressing member 10, that is, the fine structure pattern surface of the stamper 1 is in the center. This is because the microstructure transfer device is configured to bend in advance so that the distance from the substrate 3 as a transfer object increases as it goes from the outer periphery to the outer peripheral portion, and then comes into contact with the resin 2 applied on the substrate 3.

  In addition, this invention is not limited to an above-described Example, Various modifications are included. For example, the above-described embodiments have been described in detail for easy understanding of the present invention, and are not necessarily limited to those having all the configurations described. Further, a part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment. Further, it is possible to add, delete, and replace the configurations of other embodiments with respect to a part of the configurations of the embodiments.

DESCRIPTION OF SYMBOLS 1 Stamper 2 Resin 3 Board | substrate 4 Stamper holding jig 5 Stamper position control pin 6 Stamper holding spring 7a Upper buffer layer 7b Lower buffer layer 8 Upper base 9 Lifting stage 10 Pressing member 11 Upper plate 13 Guide 14 Lower base 15 Upper base

Claims (11)

A stamper holding portion that holds a stamper having a pattern surface on which a fine structure pattern is formed, so that the pattern surface faces the transfer target;
An elevating stage on which the object to be transferred is mounted and movable relative to the stamper holding portion;
A pressing member that is disposed on the opposite side of the pattern surface of the stamper and has a curved surface that protrudes toward the stamper;
A fine structure transfer apparatus that performs pattern transfer by bringing the stamper into contact with a resin applied to the surface of the transfer object in a state where the stamper is bent following the curved surface of the pressing member. The fine structure transfer apparatus according to claim 1,
The fine structure transfer apparatus, wherein the stamper holding portion is in contact with an outer peripheral portion of the stamper and holds the stamper so that a pattern surface faces the transfer target. The fine structure transfer apparatus according to claim 2,
An upper pedestal that holds the upper plate to which the pressing member is attached and an upper surface of the stamper holding portion, and adjusts the pressing force of the pressing member to the back surface of the stamper by contacting the lower surface of the upper pedestal. With a stamper position control pin,
The microstructure transfer device according to claim 1, wherein the stamper position control pin has a height adjustable structure. The fine structure transfer apparatus according to claim 1,
The fine structure transfer device, wherein the curved surface of the pressing member has a curved surface shape approximated as a part of a spherical surface. The fine structure transfer apparatus according to claim 4,
The fine structure transfer device according to claim 1, wherein the curved surface of the pressing member has a curved surface shape approximated as a part of a spherical surface defined by a radius of curvature within a range of 10,000 mm to 40,000 mm. The fine structure transfer apparatus according to claim 5,
The fine structure transfer device according to claim 1, wherein the curved surface of the pressing member has a curved surface shape approximated as a part of a spherical surface in which a radius of curvature at a central portion is larger than a radius of curvature at an outer peripheral portion side. The fine structure transfer apparatus according to claim 3,
An upper base to which the upper surface of the upper base is connected;
A lower base on which the elevating stage is installed;
Microstructure transfer, characterized by having a guide provided on the outer periphery of the upper base and the lower base, and capable of moving the elevating stage while maintaining the parallelism between the stamper and the transfer object apparatus. The fine structure transfer apparatus according to claim 3,
A fine structure transfer comprising: a first buffer layer disposed between the elevating stage and the transfer object; and a second buffer layer disposed between the stamper and the pressing member. apparatus. The fine structure transfer apparatus according to claim 3,
The resin applied to the surface of the transfer object is a photocurable resin,
The microstructure transfer device, wherein the stamper, the pressing member, and the upper base are formed of a light transmissive material. The fine structure transfer apparatus according to claim 3,
The elevating stage rises toward the stamper holding portion until the upper end of the stamper position control pin comes into contact with the lower surface of the upper pedestal, bends the stamper following the curved surface of the pressing member, and then further rises The fine structure transfer apparatus, which operates to bring the pattern surface of the stamper into contact with the resin applied to the surface of the transfer object The fine structure transfer apparatus according to claim 7,
The microstructure transfer apparatus according to claim 1, wherein the upper base has an opening corresponding to a region of the upper plate held by the upper base.

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