JP2014003182A - Joining method and joining member - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve joining strength.SOLUTION: A joining member 3 comprises: a body part 3a having a joining surface 3b joined to an electrode member 1 while facing a principal surface of the electrode member 1; and an inclined joining surface 3c provided, at an upper position relative to a joining direction of the joining surface 3b to the electrode member 1 in the body part 3a, in an inclined manner while facing a central portion side of the joining surface 3b. When the joining member 3 as described above is pressed against the electrode member 1 via a joining material 2 containing metal particles 2a, the metal particles 2a are pressed in the vertical direction by the joining surface 3b of the body part 3a. At the same time, the metal particles 2a are pressed toward the central portion side of the joining surface 3b by the inclined joining surface 3c.

Description

  The present invention relates to a joining method and a joining member.

  In a semiconductor power module, a semiconductor chip is joined to a base substrate on which a circuit pattern is formed by solder or the like, and electrical wiring on the surface of the semiconductor chip is joined to a conductive post on the printed board by solder or the like, which is a sealing resin It is sealed and configured.

  As a next-generation power semiconductor device, a power module using silicon carbide (SiC) or the like is expected. Since such a power module is required to operate at a higher temperature than before, instead of solder that melts at a high temperature, for example, bonding with metal particles coated with an organic substance is used (for example, Patent Documents). 1 and 2).

  For example, when joining a semiconductor chip and a conductive post, such metal particles are pressed and sintered by the conductive post while being heated, thereby realizing electrical connection between the semiconductor chip and the conductive post. .

JP 2010-140928 A JP 2010-283105 A

  In joining using such metal particles, the metal particles need to be pressed (pressed). In particular, the ratio of the bonding area to the volume is small. For example, in a conductive post, the pressure is perpendicular to the pressing direction. For example, a large pressure is generated on the bottom surface of the conductive post, but parallel to the pressing direction. For example, a large pressure is not generated on the side surface of the conductive post. Therefore, although sufficient bonding strength to the metal particles can be obtained on the bottom surface side of the conductive post, there is a problem that the bonding strength is insufficient on the side surface side of the conductive post. For this reason, the conductive post bonded to the semiconductor chip may be detached from the semiconductor chip due to an impact from the outside, for example. If the conductive posts are removed, it is possible that the electrical connection to the semiconductor chip cannot be maintained, and the semiconductor chip does not operate normally.

  This invention is made | formed in view of such a point, and it aims at providing the joining method and joining member which improve joining strength.

  In order to solve the above problems, in the joining method of joining the electrode member and the joining member via the metal particles, the joining member is opposed to the main surface of the electrode member and joined to the electrode member. And a tilted joint surface that is inclined upward toward the center portion of the joint surface above the joining direction of the joint surface to the electrode member in the trunk portion. Then, the metal particles are pressed against the electrode member disposed on the main surface, the metal particles are pressed at the bonding surface of the body portion, and the bonding member is further pressed, A joining method is provided in which the metal particles are pressed together with the joint surface along the inclined joint surface.

  Moreover, in order to solve the said subject, the joining member used with the said method is provided.

  According to such a joining method and joining member, joining strength improves.

It is a figure for demonstrating the joining member and joining method which concern on 1st Embodiment. It is a figure which shows the semiconductor device which concerns on 2nd Embodiment. It is a figure which shows the conductive post of the semiconductor device which concerns on 2nd Embodiment. It is a figure which shows an example of the processing flow of the manufacturing method of the semiconductor device which concerns on 2nd Embodiment. It is a figure for demonstrating the joining method of the conductive post of the semiconductor device which concerns on 2nd Embodiment. It is a figure for demonstrating the joining method of the conductive post of the semiconductor device which concerns on 3rd Embodiment. It is a figure which shows the conductive post of the semiconductor device which concerns on 4th Embodiment. It is a figure for demonstrating the joining method of the conductive post of the semiconductor device which concerns on 4th Embodiment. It is a figure which shows the conductive post of the semiconductor device which concerns on 5th Embodiment.

Hereinafter, embodiments will be described with reference to the drawings.
[First Embodiment]
A first embodiment will be described with reference to FIG.

FIG. 1 is a diagram for explaining a joining member and a joining method according to the first embodiment.
1A is an electrode member 1 to which a bonding material 2 is applied, FIG. 1B schematically illustrates a bonding member 3, and FIGS. 1C and 1D schematically illustrate a bonding process. .

  As shown in FIG. 1A, metal particles 2a are applied in advance to, for example, the electrode member 1 disposed on a base substrate (not shown) to which the bonding member 3 (described later) is bonded. For example, the metal particles 2a are dispersed in a volatile binder material 2b, and the surface of the metal particles 2a is coated with the binder material 2b, and applied to the electrode member 1 as a paste-like bonding material 2. To do. In addition, copper (Cu), silver (Ag), etc. are applicable to the metal particle 2a, for example. For the binder material 2b, for example, an organic substance composed of at least one of carboxylic acids, alcohols, and amines can be applied.

Next, the joining member 3 will be described.
As illustrated in FIG. 1B, the bonding member 3 includes a body portion 3 a including a bonding surface 3 b that is opposed to the main surface of the electrode member 1 and is bonded to the electrode member 1. Furthermore, the joining member 3 has an inclined joining surface 3c provided to be inclined toward the center of the joining surface 3b above the joining direction of the joining surface 3b to the electrode member 1 in the body portion 3a. . In the case of FIG. 1, the body portion 3 a is, for example, a column shape (post shape), and an inclined joint surface 3 c is formed around the side surface of the body portion 3 a. Such a joining member 3 is comprised with electroconductive materials, such as silver and copper, for example.

Next, a method for joining the joining member 3 to the electrode member 1 will be described.
The bonding material 2 including the metal particles 2 a applied on the electrode member 1 is heated to volatilize the volatile binder material 2 b from the bonding material 2 so that the metal particles 2 a remain on the electrode member 1.

  After volatilization, the material is further heated to a predetermined temperature, and the bonding member 3 is pressed toward the electrode member 1 as shown in FIG. Thus, the metal particles 2a remaining in the bonding material 2 due to volatilization are pressed downward in FIG. 1 by the bonding surface 3b of the body portion 3a.

Subsequently, when the bonding member 3 is further pressed, the inclined bonding surface 3c also presses the bonding material 2 together with the bonding surface 3b of the body portion 3a.
At this time, while being heated, the metal particles 2a receive pressure from the bonding surface 3b perpendicular to the electrode member 1 and also receive pressure from the inclined bonding surface 3c toward the center of the bonding surface 3b. Then, the metal particles 2a are sintered to form a strong bonding layer 2c as shown in FIG. 1D, and the bonding member 3 and the electrode member 1 are bonded via the bonding layer 2c. It becomes like this. Further, the bonding layer 2c formed in this way has a structure having heat resistance of the original melting point of the metal particles.

  As described above, the bonding member 3 is connected to the body portion 3a including the bonding surface 3b that faces the main surface of the electrode member 1 and is bonded to the electrode member 1, and the bonding direction of the bonding surface 3b to the electrode member 1 in the body portion 3a. On the other hand, an inclined joint surface 3c provided so as to be inclined toward the central portion side of the joint surface 3b is provided. When such a joining member 3 is pressed against the electrode member 1 through the joining material 2 including the metal particles 2a, the metal particles 2a are pressed in the vertical direction by the joining surface 3b of the body portion 3a, and the inclined joining surface 3c. The metal particles 2a are pressed toward the center of the bonding surface 3b. Accordingly, the bonding layer 2c formed by sintering the metal particles 2a is bonded not only to the bonding surface 3b of the bonding member 3 but also to the inclined bonding surface 3c. Therefore, the bonding member 3 is interposed via the bonding layer 2c. It comes to join to the electrode member 1 firmly.

[Second Embodiment]
In the second embodiment, a case where the bonding method and the bonding member according to the first embodiment are applied to a semiconductor device will be described as an example.

First, a semiconductor device will be described with reference to FIG.
FIG. 2 is a diagram illustrating a semiconductor device according to the second embodiment.
In FIG. 2, a cross-sectional view of the semiconductor device 100 is shown.

  A semiconductor power module which is an example of the semiconductor device 100 includes a DCB (Direct Copper Bonding) substrate 104 in which heat sinks 101 a and 101 b and circuit patterns 103 a and 103 b are formed on an insulating substrate 102, and bonding materials 105 a and 105 B on the DCB substrate 104. Semiconductor chips 106a and 106b joined by 105b. The semiconductor chips 106a and 106b can employ switching elements such as IGBTs (Insulating Gate Bipolar Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), or free wheeling diodes (FWDs). These semiconductor chips 106a and 106b can be formed on a silicon substrate or a substrate such as a SiC substrate or a gallium nitride (GaN) substrate. As the bonding materials 105a and 105b, for example, a bonding material containing metal particles can be used similarly to the bonding materials 110a, 110b, and 110c described later.

  In the semiconductor device 100, conductive posts 120a and 120b (bonding members) provided on a printed circuit board 108 are bonded materials 110a and 110b containing metal particles on upper electrodes 107a and 107b formed on the semiconductor chips 106a and 106b. It is joined via. Similarly, conductive posts 120c (joining members) provided on the printed circuit board 108 are joined to the circuit pattern 103a of the DCB board 104 via a joining material 110c containing metal particles. The printed circuit board 108 has a conductor pattern (not shown) formed on at least one surface thereof. The conductive posts 120a, 120b, and 120c are provided in through holes formed in the printed circuit board 108, and are electrically connected to the conductor pattern.

In the semiconductor device 100, the external lead-out terminals 109a and 109b are fixed to the circuit patterns 103a and 103b and the printed board 108.
As shown in FIG. 2, the semiconductor device 100 is configured by sealing such a configuration with a sealing resin 130.

Next, the conductive posts 120a, 120b, and 120c (collectively referred to as “conductive posts 120”) will be described with reference to FIG.
FIG. 3 is a view showing a conductive post of the semiconductor device according to the second embodiment.

3A is a perspective view of the tip (on the joining side) of the conductive post 120, and FIG. 3B is a bottom view of the conductive post 120. FIG.
The conductive post 120 includes a joining surface 121a that joins the upper electrodes 107a and 107b and the circuit pattern 103a of the semiconductor chips 106a and 106b. Further, the conductive post 120 has a cylindrical shape with a diameter L of, for example, 0.1 mm to 1.0 mm. The diameter of the body 121 of the conductive post 120 can be selected according to the area of the upper electrodes 107a and 107b of the semiconductor chips 106a and 106b and a desired current capacity. In addition, the conductive post 120 is inclined (inclination angle θ) inclined toward the center of the bonding surface 121a along the periphery of the bonding body 121 in the upper portion of the bonding surface 121a in FIG. An inclined portion 122 including 122a is further provided. In addition, inclination | tilt angle (theta) of the inclination joining surface 122a can be 30 degrees-60 degrees, for example. In addition, for example, such a conductive post 120 is formed by molding copper or a copper alloy, or by applying a plating treatment such as gold (Au), silver, nickel (Ni) to the surface of these members. can do. The height of the conductive posts 120a and 120b is, for example, about 1 mm to 1.5 mm. The height of the conductive post 120 can be selected so that the semiconductor chips 106a and 106b and the circuit pattern 130a and the printed circuit board 108 have a desired distance.

Next, an example of the processing flow of the method for manufacturing the semiconductor device 100 will be described with reference to FIGS.
FIG. 4 is a diagram illustrating an example of a process flow of the semiconductor device manufacturing method according to the second embodiment.

  In manufacturing the semiconductor device 100, the printed circuit board 108 including the conductive posts 120 is formed. An example of the process of forming the printed circuit board 108 is given, but the present invention is not limited to this.

  First, through-hole processing is performed on the printed board 108 to form through holes for insertion of the conductive posts 120a, 120b, and 120c and the external lead-out terminals 109a and 109b (step S11).

  Next, a conductor pattern (not shown) is formed on at least one of the front and back surfaces of the printed board 108 that has been subjected to through-hole processing (step S12), and through-hole plating processing (step S13) is performed.

  Next, the conductive posts 120a, 120b, 120c and the external lead-out terminals 109a, 109b are inserted into the through holes processed in the printed circuit board 108 (step S14). As a result, the conductive pattern of the printed circuit board 108 is connected to the conductive posts 120a, 120b, 120c and the external lead terminals 109a, 109b. The printed circuit board 108 provided with the conductive posts 120a, 120b, 120c and the external lead terminals 109a, 109b is formed in advance by the above processing flow.

  On the other hand, circuit patterns 103a and 103b are formed on one main surface with respect to the insulating substrate 102 (step S21), and heat radiation plates 101a and 101b are formed on the other main surface with a material having excellent conductivity (step S22). ). Thus, the DCB substrate 104 is formed. Note that the processing order of steps S21 and S22 may be reversed.

  Next, bonding materials 105a and 105b are respectively applied to predetermined portions of the circuit pattern 103b of the DCB substrate 104 thus formed. Semiconductor chips 106a and 106b are set on the applied bonding materials 105a and 105b, and the circuit pattern 103b of the DCB substrate 104 and the semiconductor chips 106a and 106b are bonded (step S23). The bonding materials 110a, 110b, and 110c are dropped (or drawn) onto the respective predetermined positions of the upper electrodes 107a and 107b of the semiconductor chips 106a and 106b and the circuit pattern 103a of the DCB substrate 104 bonded in this way using a dispenser. Apply (step S24).

  Next, the ends of the conductive posts 120a, 120b, 120c of the printed circuit board 108 formed through the processes of steps S11 to S14 are applied to the upper electrodes 107a, 107b of the semiconductor chips 106a, 106b and the circuit pattern 103a of the DCB substrate 104. Alignment with the bonding materials 110a, 110b, and 110c, respectively. Subsequently, while heating, the printed circuit board 108 is pressed to the DCB substrate 104 side, the conductive posts 120a, 120b, 120c, the upper electrodes 107a, 107b of the semiconductor chips 106a, 106b, and the circuit pattern 103a of the DCB substrate 104, Are joined (step S25). At this time, the external lead-out terminals 109a and 109b are also fixed to the circuit patterns 103a and 103b of the DCB substrate 104, respectively. Details of step S25 will be described later.

Each of the components thus formed is sealed with the sealing resin 130 (step S26), thereby forming the semiconductor device 100 shown in FIG. 2 (step S27).
Details of the bonding method (step S25) of the conductive posts 120a, 120b, and 120c in the method of manufacturing the semiconductor device 100 will be described with reference to FIG. Hereinafter, the upper electrodes 107a and 107b (collectively referred to as “upper electrode 107”) of the semiconductor chips 106a and 106b of the conductive posts 120a and 120b (collectively referred to as “semiconductor chip 106”). The bonding to the circuit pattern 103a of the DCB substrate 104 can be similarly performed.

FIG. 5 is a view for explaining a method of bonding conductive posts of the semiconductor device according to the second embodiment.
5A shows a state in which the joining materials 110a and 110b (collectively referred to as “joining material 110”) are pressed on the joining surface 121a of the conductive post 120, and FIG. The bonding material 110 is pressed by the bonding surface 121a and the inclined bonding surface 122a of the post 120, respectively.

  First, the bonding material 110 (step S24 in FIG. 4) applied to the upper electrode 107 of the semiconductor chip 106 is extremely fine, for example, gold, silver, copper, lead (diameter about several nm to several hundred nm). In order to facilitate handling of metal particles (not shown) such as Pb) and platinum (Pt), an organic film (surface protective film) (not shown) for protecting the surface of each particle, and the bonding material 110 The volatile binder material.

  Such a bonding material 110 is applied to the upper electrode 107 of the semiconductor chip 106 by using a dispenser with a discharge pressure of about 50 KPa to 500 KPa so that the thickness after application is about 50 μm to 400 μm. The

  After the bonding material 110 is applied to the upper electrode 107 of the semiconductor chip 106, the ambient temperature is increased to 200 to 250 degrees by heating. As a result, the binder material of the bonding material 110 on the upper electrode 107 of the semiconductor chip 106 is volatilized, the surface protective film is thermally decomposed, the surface of the metal particles is exposed, and the exposed metal particles are aggregated (FIG. 1 ( C)). While maintaining the atmospheric temperature, the bonding surface 121a of the aligned conductive post 120 is pressed against the bonding material 110 in which the metal particles are aggregated, as shown in FIG.

  Further, when the metal particles of the bonding material 110 are pressed by the bonding surface 121a of the conductive post 120, the inclined bonding surface 122a also presses the bonding material 110 toward the center of the bonding surface 121a as shown in FIG. .

  By such pressing of the conductive posts 120, the metal particles in the bonding material 110 are subjected to pressure perpendicularly to the upper electrode 107 from the bonding surface 121a, and pressure from the inclined bonding surface 122a toward the center of the bonding surface 121a. Receive. In this way, the metal particles subjected to the pressure are sintered to form a strong bonding layer 111.

  The series of pressing is performed, for example, at a pressure of about 1 MPa to 50 MPa per unit area for about 10 seconds to 300 seconds, and the thickness of the bonding layer 111 after pressing is about 10 μm to 200 μm.

  As described above, the conductive post 120 has the body portion 121 provided with the joint surface 121a that is joined to the upper electrode 107 so as to face the main surface of the upper electrode 107 of the semiconductor chip 106, and the upper electrode 107 of the joint surface 121a in the body portion 121. An inclined bonding surface 122a provided to be inclined toward the central portion side of the bonding surface 121a is provided above the bonding direction. When such a conductive post 120 is pressed against the upper electrode 107 through the bonding material 110 containing metal particles, the metal particles are pressed in the vertical direction by the bonding surface 121a of the body 121, and the metal particles are pressed by the inclined bonding surface 122a. Is pressed toward the center of the joining surface 121a. Thus, the bonding layer 111 formed by sintering the metal particles is bonded not only to the bonding surface 121a of the conductive post 120 but also to the inclined bonding surface 122a. The electrode 107 is firmly joined.

  As a result, the semiconductor device 100 in which the conductive post 120 is firmly bonded to the upper electrode 107 is prevented from being detached from the upper electrode 107 even when subjected to an impact or the like from the outside. For this reason, the reliability of the semiconductor device 100 is improved.

[Third Embodiment]
In the third embodiment, another example of the conductive post of the second embodiment will be described with reference to FIG.

FIG. 6 is a view for explaining a method of bonding conductive posts of the semiconductor device according to the third embodiment.
In the conductive post 220 of the second embodiment, a through hole 122b penetrating the inclined joint surface 122a is formed in the inclined portion 122 having the inclined joint surface 122a. The through hole 122 b is formed at least at one place of the inclined portion 122 formed along the periphery of the body portion 121.

The bonding of the semiconductor chip 106 to the upper electrode 107 by such a conductive post 220 will be described.
As in the second embodiment, the heated atmospheric temperature is maintained, and the bonding material 110 is pressed by the bonding surface 121a of the conductive post 220 (FIG. 6A).

  Further, when the bonding material 110 is pressed by the bonding surface 121a of the conductive post 220, as shown in FIG. 6B, the inclined bonding surface 122a also presses the bonding material 110 toward the center of the bonding surface 121a.

  At this time, a gas such as an organic substance volatilized from the bonding material 110 is generated by the heat of the ambient temperature. In the case of the conductive post 120 of the second embodiment, the gas is filled in the space surrounded by the inclined joint surface 122a and the bonding material 110, and the bonding between the conductive post 120 and the upper electrode 107 is hindered. There is a risk that.

  On the other hand, in the conductive post 220 of the third embodiment, since the through hole 122b is formed, the gas inside the space surrounded by the inclined joint surface 122a and the joining material 110 can be discharged to the outside. . As a result, the conductive post 220 can be easily bonded to the upper electrode 107 of the semiconductor chip 106, and the conductive post 220 can be securely bonded. The conductive post 220 is firmly bonded to the upper electrode 107 via the bonding layer 111. become. The semiconductor device 100 in which the conductive post 220 is firmly bonded to the upper electrode 107 is prevented from being detached from the upper electrode 107 even if an impact or the like is received from the external environment. For this reason, the reliability of the semiconductor device 100 is improved.

[Fourth Embodiment]
In the fourth embodiment, another example of the conductive post of the second embodiment will be described with reference to FIG.

FIG. 7 is a view showing a conductive post of the semiconductor device according to the fourth embodiment.
7A is a perspective view of the tip end (on the joining side) of the conductive post 320, and FIG. 7B is a bottom view of the conductive post 320.

  As in the second embodiment, the conductive post 320 includes a joining surface 121a that joins the upper electrodes 107a and 107b of the semiconductor chips 106a and 106b and the circuit pattern 103a. The conductive post 320 has a cylindrical shape with a diameter L of, for example, 0.1 mm to 1.0 mm. The diameter of the body 121 of the conductive post 320 may be selected according to the area of the upper electrodes 107a and 107b of the semiconductor chips 106a and 106b and a desired current capacity.

  In addition, the conductive post 320 is formed with a through hole 123 that penetrates from the opening hole 123b at the center of the joint surface 121a to the opening hole 123c at the top in FIG. Further, in the conductive post 320, an inclined joint surface 123 a that is inclined toward the central portion of the joint surface 121 a is formed around the opening hole 123 b on the joint surface 121 a side of the through hole 123. In addition, the inclination angle θ of the inclined joint surface 123a can also be set to, for example, 30 degrees to 60 degrees, and the conductive post 320 is formed by molding copper or a copper alloy, or these members, for example. The surface can be applied with gold, silver, nickel, or the like.

Next, the bonding of the semiconductor chip 106 to the upper electrode 107 by the conductive post 320 (step S25 in FIG. 4) will be described with reference to FIG.
FIG. 8 is a view for explaining a method for bonding conductive posts of the semiconductor device according to the fourth embodiment.

  8A shows a state where the bonding material 110 is pressed by the bonding surface 121a of the conductive post 320, and FIG. 8B shows a state where the bonding material 110 is pressed by the bonding surface 121a and the inclined bonding surface 123a of the conductive post 320. Each pressed state is shown.

  In the same manner as in the second embodiment, the heated atmospheric temperature is maintained, and the bonding material 110 (see FIG. 1C) in which the metal particles are aggregated is positioned as shown in FIG. The joint surface 121a of the combined conductive post 320 is pressed.

Further, when pressing is performed on the bonding surface 121a of the conductive post 320, the inclined bonding surface 123a also presses the bonding material 110 toward the center of the bonding surface 121a as shown in FIG. 8B.
Then, the metal particles in the bonding material 110 receive pressure from the bonding surface 121a perpendicular to the upper electrode 107, and pressure is applied from the inclined bonding surface 123a to the center of the bonding surface 121a (center of the through hole 123). receive. Then, the metal particles are sintered to form a strong bonding layer 111. At this time, the gas generated from the bonding material 110 passes through the through hole 123 from the opening hole 123b and is discharged to the outside from the opening hole 123c.

  As described above, the conductive post 320 has the body portion 121 provided with the joint surface 121a facing the main surface of the upper electrode 107 of the semiconductor chip 106 and joined to the upper electrode 107, and the upper electrode 107 of the joint surface 121a in the body portion 121. An inclined bonding surface 123a provided to be inclined toward the central portion side of the bonding surface 121a is provided above the bonding direction. When such a conductive post 320 is pressed against the upper electrode 107 through the bonding material 110 containing metal particles, the metal particles are pressed in the vertical direction by the bonding surface 121a of the body 121, and the metal particles are pressed by the inclined bonding surface 123a. Is pressed toward the center of the joining surface 121a. As a result, the bonding layer 111 formed by sintering the metal particles is bonded not only to the bonding surface 121a of the conductive post 320 but also to the inclined bonding surface 123a. The electrode 107 is firmly joined. Further, since the through hole 123 is formed, the gas inside the space surrounded by the inclined joint surface 123a and the joining material 110 can be discharged to the outside. For this reason, it becomes easy to join the conductive post 320 and the upper electrode 107, and it comes to join reliably.

  As a result, the semiconductor device 100 in which the conductive post 320 is firmly bonded to the upper electrode 107 is prevented from being detached from the upper electrode 107 even when subjected to an impact or the like from the outside. For this reason, the reliability of the semiconductor device 100 is improved.

[Fifth Embodiment]
In the fifth embodiment, another conductive post based on the conductive posts of the third embodiment and the fourth embodiment will be described with reference to FIG.

FIG. 9 is a diagram illustrating a conductive post of a semiconductor device according to the fifth embodiment.
The conductive post 420 has an inclined joint surface 123a and a through hole 123 (FIGS. 7 and 8) of the conductive post 320 of the fourth embodiment, compared to the conductive post 220 (FIG. 6) of the third embodiment. Formed.

  Even in such a conductive post 420, when the conductive post 420 is pressed against the upper electrode 107 through the bonding material 110 containing metal particles, the metal particles are pressed in the vertical direction by the bonding surface 121 a of the body portion 121, and inclined bonding is performed. The metal particles are pressed toward the center of the joining surface 121a by the surfaces 122a and 123a. Thus, the bonding layer 111 formed by sintering the metal particles is bonded not only to the bonding surface 121a of the conductive post 420 but also to the inclined bonding surfaces 122a and 123a. Therefore, the conductive post 420 is interposed via the bonding layer 111. Thus, the upper electrode 107 is firmly bonded. Further, since the through holes 122b and 123 are formed, the gas inside the space surrounded by the inclined joining surfaces 122a and 123a and the joining material 110 can be discharged to the outside. For this reason, it becomes easy to join the conductive post 420 and the upper electrode 107, and it comes to join reliably.

  As a result, the semiconductor device 100 in which the conductive post 420 is firmly bonded to the upper electrode 107 is prevented from being detached from the upper electrode 107 even when subjected to an impact or the like from the outside. For this reason, the reliability of the semiconductor device 100 is improved.

DESCRIPTION OF SYMBOLS 1 Electrode member 2 Joining material 2a Metal particle 2b Binder material 2c Joining layer 3 Joining member 3a Body part 3b Joining surface 3c Inclined joining surface

Claims (6)

In the joining method of joining the electrode member and the joining member via the metal particles,
The bonding member includes a body portion provided with a bonding surface that is opposed to the main surface of the electrode member and bonded to the electrode member, and upward in a bonding direction of the bonding surface to the electrode member in the body portion. An inclined bonding surface provided to be inclined toward the center side of the bonding surface,
Pressing the joining member against the electrode member on which the metal particles are arranged on the main surface, pressing the metal particles at the joining surface of the body part,
Further pressing the bonding member, pressing the metal particles at the inclined bonding surface together with the bonding surface,
The joining method characterized by the above-mentioned. The inclined joint surface is provided on a side portion of the body portion,
When the bonding member is further pressed, the inclined bonding surface presses the metal particles toward the center portion of the bonding surface of the body portion.
The joining method according to claim 1. The metal particles are dispersed in a volatile binder material that volatilizes when heated and applied to the main surface of the electrode member,
While heating the binder material containing the metal particles, the bonding member is pressed against the electrode member, the bonding surface and the inclined bonding surface press the metal particles,
Sintering the pressed metal particles to form a bonding layer;
The joining method according to claim 2. The inclined bonding surface is formed with a through-hole that leads to a space surrounded by the inclined bonding surface and the metal particles when the bonding member is pressed against the electrode member.
The joining method according to claim 3. The inclined joint surface is provided at a center part of the joint surface of the body part, and the body part is formed with a through hole passing from the center part to the center of the body part,
When the bonding member is further pressed, the inclined bonding surface presses the metal particles on the main surface of the electrode member to the center side of the body part,
The joining method according to claim 1. In an electrode member and a bonding member bonded via metal particles,
A body part that includes a bonding surface that is opposed to the main surface of the electrode member and is bonded to the electrode member, and that presses the metal particles disposed on the main surface of the electrode member with the bonding surface;
In the body portion, the inclined bonding surface is provided to be inclined toward the central portion side of the bonding surface above the bonding direction of the bonding surface to the electrode member, and presses the metal particles together with the bonding surface. When,
A joining member comprising:

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