JP2013509583A5 - - Google Patents

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JP2013509583A5
JP2013509583A5 JP2012536756A JP2012536756A JP2013509583A5 JP 2013509583 A5 JP2013509583 A5 JP 2013509583A5 JP 2012536756 A JP2012536756 A JP 2012536756A JP 2012536756 A JP2012536756 A JP 2012536756A JP 2013509583 A5 JP2013509583 A5 JP 2013509583A5
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Japan
Prior art keywords
lcr
assembly
sensing
resonator sensor
sample
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JP2012536756A
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JP2013509583A (ja
JP5651185B2 (ja
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Publication date
Priority claimed from US12/609,131 external-priority patent/US8736425B2/en
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Claims (12)

  1. 試料の2以上の環境パラメータの同時検知のためのインダクタ−コンデンサ−抵抗器(LCR)アセンブリであって、当該アセンブリが、
    LCR共振器センサと、
    LCR共振器センサに動作可能に関連するピックアップコイルと
    を備えており、上記LCR共振器センサが、
    検知領域を有するアンテナと、
    検知領域上に堆積された検知膜と、
    LCR共振器センサをアセンブリに機械的に取り付けるための取付け点と
    を備えており、検知膜における粘弾性的変化が、ピックアップコイルに対するアンテナの変位を引き起こす、アセンブリ。
  2. 前記LCRセンサがICメモリチップをさらに備える、請求項1記載のアセンブリ。
  3. 前記取付け点が、支持された近位端の反対側に片持ち遠位端を有する検知膜となる、請求項1記載のアセンブリ。
  4. 前記支持された近位端に隣接した1以上の追加の取付け点をさらに備える、請求項3記載のアセンブリ。
  5. 前記検知膜が、ゼロ次元ナノ材料、一次元ナノ材料、二次元ナノ材料、三次元ナノ材料又はそれらの組合せを含む、請求項1記載のアセンブリ。
  6. 前記LCR共振器センサが試料の2以上の条件を検知するように構成され、該条件が試料の物理的、化学的及び生物学的特性を含む、請求項1記載のアセンブリ。
  7. 試料の2以上の環境条件を測定する方法であって、
    請求項1記載のLCRアセンブリを用意する段階と、
    LCR共振器センサから電磁信号を送信する段階と、
    ピックアップコイルを用いてLCR共振器センサ信号を検知する段階と、
    ピックアップコイルに結合されたリーダ/ライタ装置を用いて、LCR共振器センサ信号を読み出す段階と
    を含む方法。
  8. 前記検知段階が、検知膜のインピーダンススペクトルの測定値から検知膜の誘電的変化を計算する段階を含む、請求項記載の方法。
  9. 検知膜の誘電的変化を計算する段階が多変量解析を用いる、請求項記載の方法。
  10. 2以上の条件が、試料の物理的、化学的及び生物学的特性の測定を含む、請求項記載の方法。
  11. 試料を含む2以上の環境の条件を測定する方法であって、当該方法が、
    LCRアセンブリを用意する段階と、
    ICメモリチップに異なる入力パワーレベルを印加する段階と、
    異なる入力パワーレベルで検知アンテナの複素インピーダンススペクトルを測定する段階であって、異なる入力パワーレベルでの複素インピーダンススペクトルの変化が、試料の異なる物理的又は生物学的特性に関係する、測定する段階と、
    LCRアセンブリを用意する段階と
    を含んでおり、上記LCRアセンブリが、
    LCR共振器センサと、
    LCR共振器センサに動作可能に関連するピックアップコイルと
    を備えており、上記LCR共振器センサが、
    検知領域を有するアンテナと、
    検知領域上に堆積された検知膜と、
    アンテナに取り付けられたICメモリチップと
    を備えている、方法。
  12. ICメモリチップに異なる入力パワーレベルを印加する段階が、ICメモリチップをその異なる状態に実質的に活動化するように比較的高いパワーレベルを印加する段階と、ICメモリチップを実質的に非活動化するように比較的低いパワーレベルをICメモリチップに印加する段階とを含む、請求項11記載の方法。
JP2012536756A 2009-10-30 2010-10-27 共振センサの性能向上のための方法及びシステム Expired - Fee Related JP5651185B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/609,131 2009-10-30
US12/609,131 US8736425B2 (en) 2009-10-30 2009-10-30 Method and system for performance enhancement of resonant sensors
PCT/SE2010/051160 WO2011053234A1 (en) 2009-10-30 2010-10-27 Method and system for performance enhancement of resonant sensors

Publications (3)

Publication Number Publication Date
JP2013509583A JP2013509583A (ja) 2013-03-14
JP2013509583A5 true JP2013509583A5 (ja) 2013-12-19
JP5651185B2 JP5651185B2 (ja) 2015-01-07

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JP2012536756A Expired - Fee Related JP5651185B2 (ja) 2009-10-30 2010-10-27 共振センサの性能向上のための方法及びシステム

Country Status (5)

Country Link
US (1) US8736425B2 (ja)
EP (1) EP2494315B1 (ja)
JP (1) JP5651185B2 (ja)
CN (1) CN102612638B (ja)
WO (1) WO2011053234A1 (ja)

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