JP2013502728A5 - - Google Patents
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- JP2013502728A5 JP2013502728A5 JP2012525744A JP2012525744A JP2013502728A5 JP 2013502728 A5 JP2013502728 A5 JP 2013502728A5 JP 2012525744 A JP2012525744 A JP 2012525744A JP 2012525744 A JP2012525744 A JP 2012525744A JP 2013502728 A5 JP2013502728 A5 JP 2013502728A5
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- epitaxial
- epitaxial material
- less
- nitrogen containing
- materials
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- 239000000463 material Substances 0.000 claims 42
- 229910052733 gallium Inorganic materials 0.000 claims 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 14
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 9
- 230000015572 biosynthetic process Effects 0.000 claims 6
- 238000005755 formation reaction Methods 0.000 claims 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 3
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 230000000903 blocking Effects 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
Claims (30)
表面領域を有する非極性又は半極性のバルクガリウム及び窒素含有基板を提供することと；
前記バルクガリウム及び窒素含有基板の前記表面領域上に第１の厚さの第１のエピタキシャル材料を形成することであって、前記第１のエピタキシャル材料は、前記バルクガリウム及び窒素含有基板の前記表面領域上に疑似形態的に形成されることと；
前記第１のエピタキシャル材料上に第２の厚さの１つ以上の第２のエピタキシャル材料を形成することであって、前記１つ以上の第２のエピタキシャル材料は前記第１のエピタキシャル材料と前記１つ以上の第２のエピタキシャル材料とを備えたエピタキシャルスタック構造を形成するように構成されることと；
を含み、
前記エピタキシャルスタック構造の合計厚さは２ミクロン未満であり；前記エピタキシャルスタック構造はｎ型ガリウム及び窒素含有層とp型ガリウム及び窒素含有層とを備えており；
前記第１のエピタキシャル材料と前記１つ以上の第２のエピタキシャル材料とを形成することは４ミクロン／時間以上の成長速度によって特徴づけられ；
前記第１のエピタキシャル材料と前記１つ以上の第２のエピタキシャル材料とを形成することは大気圧で行われ；
前記発光デバイスは２．５時間未満でファブリケートされる
方法。
A light-emitting device a way to Fabry Kate,
Providing a nonpolar or semipolar bulk gallium and nitrogen containing substrate having a surface region ;
Forming a first epitaxial material of a first thickness on the surface region of the bulk gallium and nitrogen containing substrate, wherein the first epitaxial material is the surface of the bulk gallium and nitrogen containing substrate. Being formed pseudomorphically on the region ;
Forming one or more second epitaxial materials of a second thickness on the first epitaxial material, the one or more second epitaxial materials comprising the first epitaxial material and the first epitaxial material; Being configured to form an epitaxial stack structure comprising one or more second epitaxial materials;
Including
The total thickness of the epitaxial stacked structure is less than 2 microns; said epitaxial stacked structure has an n-type gallium and nitrogen containing layer and a p-type gallium and nitrogen containing layer;
Forming the first epitaxial material and the one or more second epitaxial materials is characterized by a growth rate of 4 microns / hour or more;
Forming the first epitaxial material and the one or more second epitaxial materials is performed at atmospheric pressure;
The method wherein the light emitting device is fabricated in less than 2.5 hours .
The method of claim 1, wherein the first thickness is less than 1 micron.
The method of claim 1, wherein the second thickness is less than 1 micron.
The method of claim 1, wherein the second thickness is less than 100 nm.
The method of claim 1, wherein the first epitaxial material has a stacking defect density of 1E4 cm −1 or less.
Said first epitaxial material The method of claim 1, wherein the threading dislocation density is -2 hereinafter 1E8cm.
The method of claim 1, wherein the first epitaxial material has a substantially uniform defect density from a first region to a second region.
Said first epitaxial material and having an interface between the surface region, the method according the interface to I請 Motomeko 1 such contain one or more nucleation layer substantially.
The method of claim 1, wherein the total thickness is less than 1 micron.
The method of claim 1, wherein the epitaxial stack structure is formed within a total growth time characterized by the formation of gallium and nitrogen containing epitaxial materials.
The method of claim 10 , wherein the total growth time is less than 2 hours.
The method of claim 1, wherein the epitaxial stack structure is provided within a chamber time characterized by a total growth time and a temperature ramping time.
The chamber time is 1 . 13. The method of claim 12 , wherein the method is less than 5 hours.
The method of claim 1, wherein the epitaxial stack structure is provided within a cycle time characterized by chamber time and loading and unloading times.
The method of claim 14 wherein the cycle time is less than 2 hours.
The method of claim 1, wherein the first epitaxial material and the one or more second epitaxial materials are deposited in a single chamber.
The method of claim 1, wherein the first epitaxial material and the one or more second epitaxial materials are independently deposited in a plurality of chambers.
The method of claim 1, further comprising maintaining a temperature determined during formation of the first epitaxial material and formation of the one or more second epitaxial materials.
The method of claim 1, further comprising using an autocassette MOCVD reactor, wherein the autocassette MOCVD reactor is configured to hold wafer platters for two or more single wafer or multi-wafer reactors. Method.
The method of claim 1, wherein the epitaxial stack structure forms LED emissions in a wavelength range of 390-420 nm, a wavelength range of 420-460 nm, a wavelength range of 460-500 nm, or a wavelength range of 500-600 nm .
The method of claim 1, wherein the gallium and nitrogen containing substrate is characterized by a nonpolar surface orientation.
The method of claim 1 wherein the gallium and nitrogen containing substrate is thus characterized by a semi-polar surface Oriented.
表面領域を有する非極性又は半極性のバルクガリウム及び窒素含有基板を提供することと；
第１の厚さの第１のエピタキシャル材料をある成長速度で前記バルクガリウム及び窒素含有基板の前記表面領域上に形成することであって、前記第１のエピタキシャル材料は、前記バルクガリウム及び窒素含有基板の前記表面領域上に疑似形態的に形成されることと；
前記第１のエピタキシャル材料上に１つ以上の第２のエピタキシャル材料を形成することであって、前記１つ以上の第２のエピタキシャル材料はエピタキシャルスタック構造を形成するように構成されることと；
を含み、
前記エピタキシャルスタック構造は２ミクロン未満の合計厚さで特徴づけられ、前記エピタキシャルスタック構造は、ｎ型ガリウム及び窒素含有層、少なくとも１つの（Ａｌ，Ｇａ，Ｉｎ）Ｎ層及び複数の量子井戸構造を含んだ活性領域、ＡｌＧａＮ電子ブロッキング層、並びにｐ型ガリウム及び窒素含有層を備え；
前記第１エピタキシャル材料及び前記１つ以上の第２エピタキシャル材料の形成は４ミクロン／時間以上の成長速度によって特徴づけられ；
前記第１のエピタキシャル材料及び前記１つ以上の第２のエピタキシャル材料の形成は大気圧で行われ；
前記発光デバイスは２．５時間未満でファブリケートされる
方法。
A light-emitting device a way to Fabry Kate,
Providing a nonpolar or semipolar bulk gallium and nitrogen containing substrate having a surface region;
Forming a first epitaxial material of a first thickness on the surface region of the bulk gallium and nitrogen containing substrate at a growth rate, the first epitaxial material comprising the bulk gallium and nitrogen containing Being quasi-morphically formed on the surface region of the substrate ;
Forming one or more second epitaxial materials on the first epitaxial material, wherein the one or more second epitaxial materials are configured to form an epitaxial stack structure ;
Only including,
The epitaxial stack structure is characterized by a total thickness of less than 2 microns, the epitaxial stack structure comprising an n-type gallium and nitrogen containing layer, at least one (Al, Ga, In) N layer and a plurality of quantum well structures. Comprising a contained active region, an AlGaN electron blocking layer, and a p-type gallium and nitrogen containing layer;
Formation of the first epitaxial material and the one or more second epitaxial materials is characterized by a growth rate of 4 microns / hour or more;
Forming the first epitaxial material and the one or more second epitaxial materials is performed at atmospheric pressure;
The light emitting device is fabricated in less than 2.5 hours
Method.
24. The method of claim 23 , wherein the formation of the first epitaxial material and the one or more second epitaxial materials is performed in a temperature range of 950C to 1,200C .
24. The method of claim 23 , wherein the providing includes selecting the bulk gallium and nitrogen containing substrate from an autocassette maintained in a chamber.
24. The method of claim 23 , wherein the formation of the first epitaxial material and the one or more second epitaxial materials is performed in an atmospheric pressure MOCVD chamber.
Before SL first epitaxial material The method of claim 23, wherein the surface roughness of 5 × 5 square microns is 2 NmRMS less.
The method of claim 23 , wherein the first epitaxial material is an n-type material.
The method of claim 23 wherein the one or more second epitaxial material containing a p-type material.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23598909P | 2009-08-21 | 2009-08-21 | |
| US61/235,989 | 2009-08-21 | ||
| PCT/US2010/046231 WO2011022699A1 (en) | 2009-08-21 | 2010-08-20 | Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013502728A JP2013502728A (en) | 2013-01-24 |
| JP2013502728A5 true JP2013502728A5 (en) | 2013-10-03 |
Family
ID=43607353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012525744A Pending JP2013502728A (en) | 2009-08-21 | 2010-08-20 | High-speed growth method and structure for gallium and nitrogen containing ultra-thin epitaxial structures for devices |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2013502728A (en) |
| CN (1) | CN102576652A (en) |
| DE (1) | DE112010003358T5 (en) |
| WO (1) | WO2011022699A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9236530B2 (en) * | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
| US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992016966A1 (en) * | 1991-03-18 | 1992-10-01 | Boston University | A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| JP4416297B2 (en) * | 2000-09-08 | 2010-02-17 | シャープ株式会社 | Nitride semiconductor light emitting element, and light emitting device and optical pickup device using the same |
| US6784074B2 (en) * | 2001-05-09 | 2004-08-31 | Nsc-Nanosemiconductor Gmbh | Defect-free semiconductor templates for epitaxial growth and method of making same |
| US6653166B2 (en) * | 2001-05-09 | 2003-11-25 | Nsc-Nanosemiconductor Gmbh | Semiconductor device and method of making same |
| US8366830B2 (en) * | 2003-03-04 | 2013-02-05 | Cree, Inc. | Susceptor apparatus for inverted type MOCVD reactor |
| KR100714639B1 (en) * | 2003-10-21 | 2007-05-07 | 삼성전기주식회사 | light emitting device |
| JP2005235908A (en) * | 2004-02-18 | 2005-09-02 | Osaka Gas Co Ltd | NITRIDE SEMICONDUCTOR LAMINATED SUBSTRATE AND GaN-BASED COMPOUND SEMICONDUCTOR DEVICE |
| US7504274B2 (en) * | 2004-05-10 | 2009-03-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| KR101365604B1 (en) * | 2004-05-10 | 2014-02-20 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition |
| JP4513446B2 (en) * | 2004-07-23 | 2010-07-28 | 豊田合成株式会社 | Crystal growth method of semiconductor crystal |
| KR100593936B1 (en) * | 2005-03-25 | 2006-06-30 | 삼성전기주식회사 | Method of growing non-polar a-plane gallium nitride |
| JP4806261B2 (en) * | 2006-01-05 | 2011-11-02 | パナソニック株式会社 | Manufacturing method of wafer for nitride compound semiconductor device |
| CN1851942A (en) * | 2006-03-22 | 2006-10-25 | 西安电子科技大学 | Method for one-time growth preparation of composite multi-quanta pit structure |
-
2010
- 2010-08-20 JP JP2012525744A patent/JP2013502728A/en active Pending
- 2010-08-20 CN CN2010800458819A patent/CN102576652A/en active Pending
- 2010-08-20 DE DE112010003358T patent/DE112010003358T5/en not_active Withdrawn
- 2010-08-20 WO PCT/US2010/046231 patent/WO2011022699A1/en active Application Filing
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