JP2013258334A - Semiconductor device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To secure the adhesion between a mold resin and an insulation sheet in a semiconductor device with a double side heat radiation structure, and to provide a manufacturing method of the semiconductor device with the double side heat radiation structure which secures the adhesion between the mold resin and the insulation sheet.SOLUTION: A semiconductor device 100 with a double side heat radiation structure, in which heat of a semiconductor element 10 having electrodes 11 on both surfaces is radiated from both surfaces, includes: the semiconductor elements 10; heat sinks 20 respectively connected with the electrodes 11; a mold resin 60 which exposes a part of each heat sink 20 as a heat radiation surface 21 and seals the semiconductor elements 10 and the heat sinks 20; and insulation sheets 40 which respectively cover the heat radiation surfaces 21. The mold resin 60 is provided with recessed parts 60a located positions enclosing the heat radiation surfaces 21 on both surfaces on which the heat radiation surfaces 21 are exposed. The insulation sheet 40 covers an entire portion of each heat radiation surface 21 and end parts of the insulation sheet 40 respectively adhere into the recessed parts 60a.

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof.

  Conventionally, as an example of a semiconductor device that ensures insulation by an insulating sheet, there is a semiconductor device (molded resin encapsulated power semiconductor device) described in Patent Document 1.

  The semiconductor device includes a heat dissipation member (heat sink) and a semiconductor element (power semiconductor chip) mounted on the heat dissipation member, and the heat dissipation member, the semiconductor element, and the like are exposed to the outside. Is sealed with mold resin. And the insulating sheet which consists of a laminated structure (composite body) of a metal layer and an insulating member (insulating resin layer) is adhering to the bottom face of the heat radiating member exposed outside the mold resin. That is, the insulating member is fixed on the bottom surface of the heat radiating member, and the metal layer is fixed to the insulating member.

Japanese Patent No. 3740116

  The semiconductor device disclosed in Patent Document 1 described above has a structure in which the heat dissipation member is exposed only on one surface of the mold resin. That is, the semiconductor device has a single-side heat dissipation structure. In this single-sided heat dissipation structure semiconductor device, when the insulating member is fixed on the bottom surface of the heat dissipation member, the uncured insulating member and the mold resin are molded together, or the insulating member from the outside of the molded resin after molding It is possible to paste.

  By the way, a semiconductor device also has a structure that radiates heat from both sides of a semiconductor element molded with a mold resin (a semiconductor device having a so-called double-sided heat dissipation structure). In such a semiconductor device, it is necessary to expose a heat radiation surface by cutting after molding a semiconductor element and a heat radiation member arranged so as to sandwich the semiconductor element with a mold resin. Therefore, in a semiconductor device having a double-sided heat dissipation structure, an uncured insulating member and a mold resin cannot be molded together, and thus it is necessary to affix the insulating member to the molded resin after molding. However, when an insulating member is affixed to the molded resin after molding, the adhesion cannot be ensured as compared with the case where the uncured insulating member and the molding resin are molded together.

  The present invention has been made in view of the above problems, and in a semiconductor device having a double-sided heat dissipation structure, ensuring the adhesion between the mold resin and the insulating member, and ensuring the adhesion between the mold resin and the insulating member. An object of the present invention is to provide a method for manufacturing a semiconductor device having a double-sided heat dissipation structure.

In order to achieve the above object, a semiconductor device according to claim 1,
A semiconductor device having a double-sided heat dissipation structure that dissipates heat from both sides of a semiconductor element (10) having electrodes (11) on both sides,
A semiconductor element;
Two heat dissipating members (20) made of metal connected to each electrode;
Mold resin (60, 61, 62, 63, 64) that seals the semiconductor element and the heat radiating member while exposing a part of each heat radiating member as the heat radiating surface (21);
An insulating member (40) covering the heat radiation surface,
The mold resin is provided with a recess (60a, 61a, 62a, 63a, 64a) at a position surrounding the heat dissipation surface on each of both surfaces where the heat dissipation surface is exposed,
The insulating member is characterized in that the end portion is bonded in the recess while covering the entire heat radiation surface.

  Thus, the adhesion area of an insulating member and mold resin can be increased by adhere | attaching the edge part of the insulating member which covers a thermal radiation surface in the recessed part of mold resin. Therefore, even in a semiconductor device having a double-sided heat dissipation structure in which the heat dissipation surface is exposed on both sides of the mold resin, the adhesion between the mold resin and the insulating member can be ensured. That is, it can suppress that an insulating member peels from mold resin.

  Further, as shown in claim 2, a protective member (50, 51, 52, 53) attached to the mold resin may be provided while covering the boundary between the end portion of the insulating member and the mold resin.

  By doing in this way, the adhesive force of mold resin and an insulating member in the boundary of the edge part of an insulating member and mold resin can be improved. Moreover, it can suppress that the adhesive force in the boundary of the edge part of an insulating member and mold resin falls because the edge part of an insulating member deteriorates by moisture absorption etc. FIG.

  Moreover, as shown in claim 3, the protective member may be made of metal.

  Thus, by using a metal as the protective member, peeling of the insulating member due to mechanical stress can be suppressed.

  Further, as shown in claim 4, the protective member (50, 53) may cover the entire exposed surface of the insulating member.

  By doing so, it is possible to protect the entire exposed surface of the insulating member from mechanical stress while suppressing moisture absorption of the insulating member.

  Moreover, as shown in claim 5, the insulating member (40) and the protective member (50, 51) may have rounded corners. Thus, the stress applied to the corners can be reduced by rounding the corners.

  According to a sixth aspect of the present invention, the protective member may be bonded to the mold resin with an adhesive (80, 81, 82) at a position surrounding the insulating member.

  By doing in this way, the adhesive force of a protection member and mold resin can be improved. Along with this, the insulating member can be further prevented from peeling off from the mold resin.

  In addition, as shown in claim 7, the mold resin (61) may include a protective member recess (61b) in which the end of the protective member is disposed at a position surrounding the recess (61a).

  By doing in this way, an insulating member can be reliably covered with a protection member. Therefore, it can further suppress that the contact | adhesion power in the boundary of the edge part of an insulating member and mold resin falls because an insulating member deteriorates by moisture absorption etc.

  In addition, as shown in claim 8, in the concave portions (62a, 63a), the portion of the concave portion (62a, 63a) where the insulating member comes in contact is provided with either a concave shape portion recessed from the periphery or a convex shape portion protruding from the periphery. May be.

  By doing in this way, since the contact area of a recessed part and an insulating member can be enlarged, the adhesive force of a recessed part and an insulating member can be improved further.

  Further, as shown in claim 9, an insulating member may be adhered to the entirety of the recesses (60a, 61a, 62a, 63a).

  Also by doing so, the contact area between the recess and the insulating member can be increased, and the adhesion between the recess and the insulating member can be further improved.

  According to a tenth aspect of the present invention, the concave portion provided on the surface of the mold resin and the concave portion provided on the back surface of the mold resin may be provided at positions facing each other through the mold resin.

  By doing in this way, the insulation member of the same shape and the same size can be adhere | attached on each surface of mold resin. That is, the insulating member can be made into a common part on each surface of the mold resin.

In order to achieve the above object, a method of manufacturing a semiconductor device according to claim 11 comprises:
A method for manufacturing a semiconductor device having a double-sided heat dissipation structure that radiates heat from both sides of a semiconductor element (10) having electrodes (11) on both sides,
This is a step of molding a semiconductor element and two heat radiating members (20) made of metal connected to each electrode with a molding resin (60, 61, 62, 63, 64), and a region corresponding to the heat radiating member is formed. A molding step of molding using a mold having a convex portion protruding from the periphery at a surrounding position;
After the molding step, a cutting step of cutting the surface and exposing one surface of the heat radiating member as a heat radiating surface (21) from the mold resin,
A step of attaching an insulating member (40) to the heat radiating surface side after the cutting step, and covering the entirety of the heat radiating surface with the insulating member, while forming a concave portion of the mold resin formed by the convex portion of the mold ( 60a, 61a, 62a, 63a, 64a), and a bonding step of bonding the end portions of the insulating members.
It is characterized by.

  Thus, the adhesion area of an insulating member and mold resin can be increased by adhere | attaching the edge part of the insulating member which covers a thermal radiation surface in the recessed part of mold resin. Therefore, even in a semiconductor device having a double-sided heat dissipation structure in which the heat dissipation surface is exposed on both sides of the mold resin, the adhesion between the mold resin and the insulating member can be ensured. Therefore, it is possible to manufacture a semiconductor device in which the insulating member is hardly peeled off from the mold resin.

  According to a twelfth aspect of the present invention, after the attaching step, an attachment step of attaching the protective member (50, 51, 52, 53) to the mold resin while covering the boundary between the end portion of the insulating member and the mold resin is provided. May be.

  By doing in this way, the adhesive force of mold resin and an insulating member in the boundary of the edge part of an insulating member and mold resin can be improved. Moreover, it can suppress that the adhesive force in the boundary of the edge part of an insulating member and mold resin falls because the edge part of an insulating member deteriorates by moisture absorption etc. FIG. That is, it is possible to manufacture a semiconductor device in which the insulating member is less likely to be peeled off from the mold resin.

  According to a thirteenth aspect of the invention, at the same time as the attaching step, an attachment step of attaching the protective member (50, 51, 52, 53) to the mold resin while covering the boundary between the end portion of the insulating member and the mold resin is provided. It may be.

  By doing in this way, the adhesive force of mold resin and an insulating member in the boundary of the edge part of an insulating member and mold resin can be improved. Moreover, it can suppress that the adhesive force in the boundary of the edge part of an insulating member and mold resin falls because an insulating member deteriorates by moisture absorption etc. FIG. That is, it is possible to manufacture a semiconductor device in which the insulating member is less likely to be peeled off from the mold resin. Further, in this way, the attaching step may be performed simultaneously with the attaching step. Thereby, the manufacturing time of the semiconductor device can be shortened.

  Further, as shown in claim 14, in the attaching step, a metal may be used as a protective member.

  By doing so, it is possible to manufacture a semiconductor device in which peeling of the insulating member due to mechanical stress is suppressed.

  Moreover, as shown in claim 15, in the attaching step, the protective member (50, 53) may be attached to the mold resin while covering the entire exposed surface of the insulating member.

  By doing so, it is possible to manufacture a semiconductor device in which moisture absorption of the insulating member is suppressed and the entire exposed surface of the insulating member is protected from mechanical stress.

  In addition, as shown in claim 16, after the cutting process, it is provided with a coating process for coating the uncured resin (80) in the recess, and the pasting process is performed after the coating process. After disposing the insulating member, the uncured resin may be cured.

  By doing in this way, the adhesive force of mold resin and an insulating member can be improved further. Therefore, it is possible to manufacture a semiconductor device in which the adhesion between the mold resin and the insulating member is further improved.

It is a top view which shows schematic structure of a semiconductor device. It is sectional drawing which follows the II-II line | wire of FIG. It is a perspective view of the state where the semiconductor device was attached to the cooler. It is sectional drawing explaining the manufacturing method of a semiconductor device. 10 is a cross-sectional view illustrating a schematic configuration of a semiconductor device according to Modification 1. FIG. 10 is a cross-sectional view illustrating a schematic configuration of a semiconductor device according to Modification 2. FIG. 10 is a cross-sectional view illustrating a schematic configuration of a semiconductor device according to Modification 3. FIG. 10 is a cross-sectional view illustrating a schematic configuration of a semiconductor device according to Modification 4. FIG. 10 is a cross-sectional view illustrating a schematic configuration of a semiconductor device according to Modification 5. FIG. 10 is a cross-sectional view illustrating a schematic configuration of a semiconductor device according to Modification 6. FIG. 10 is a plan view illustrating a schematic configuration of a semiconductor device according to Modification Example 7. FIG. 10 is a plan view illustrating a schematic configuration of a semiconductor device according to Modification Example 8. FIG. 10 is a plan view illustrating a schematic configuration of a semiconductor device according to Modification 9. FIG. 10 is a plan view illustrating a schematic configuration of a semiconductor device according to Modification 10. FIG. (A), (b) is sectional drawing which shows schematic structure of the semiconductor device in the modification 11. FIG. 12 is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to Modification 12. FIG.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS.

  As shown in FIGS. 1 and 2, the semiconductor device 100 has a double-sided heat dissipation structure that radiates (cools) the semiconductor element 10 sealed with the mold resin 60 from both sides. The semiconductor device 100 is incorporated in an inverter circuit of a vehicle, for example, and is applied as a device for PWM control of a load (for example, a motor). In other words, the semiconductor device 100 is a so-called power card.

  As an example, the semiconductor device 100 is attached to the cooler 200 as shown in FIG. That is, the semiconductor device 100 is cooled from both sides by the cooler 200. Here, the cooler 200 will be briefly described. The cooler 200 cools the object to be cooled (here, the semiconductor device 100) with a cooling fluid (refrigerant), and is a so-called heat exchanger. The cooler 200 includes cooling units 210 and 220 each having a refrigerant (fluid) channel surrounded by a wall made of metal, a supply port 230 that supplies the refrigerant to the refrigerant channel of the cooling units 210 and 220, and the semiconductor device 100. The exhaust port 240 etc. which discharge the refrigerant | coolant warmed with the emitted heat | fever from the cooling parts 210 and 220 are comprised. The semiconductor device 100 is sandwiched between the cooling unit 210 and the cooling unit 220 and attached to the cooler 200.

  Here, the description returns to the semiconductor device 100. As shown in FIG. 2, the semiconductor device 100 includes two semiconductor elements 10 having electrodes 11 on both sides, two heat sinks (heat dissipating members) 20, an insulating sheet 40, a metal film 50, and a mold resin (insulating resin) 60. , A large current terminal 71, a small current terminal 72, and the like. In the semiconductor device 100, two semiconductor elements 10, a part of the two heat sinks 20, a part of the large current terminal 71, and a part of the small current terminal 72 are sealed with the mold resin 14. In the present embodiment, a semiconductor device 100 (so-called 2-in-1 type semiconductor device) including two semiconductor elements 10 is employed as an example. However, the present invention is not limited to this. The object of the present invention can be achieved by a semiconductor device including only one semiconductor element or a semiconductor device including three or more semiconductor elements.

  The semiconductor element 10 includes electrodes 11 (surface electrode and back electrode) on both sides, and switching elements such as IGBT, RC-IGBT, and MOSFET can be employed. In other words, the semiconductor element 10 is a power semiconductor element. Therefore, the semiconductor device 100 can also be referred to as a power semiconductor device. In this embodiment, in FIG. 2, the upper electrode of the semiconductor element 10 is also referred to as a front electrode 11, and the lower electrode of the semiconductor element 10 is also referred to as a back electrode 11. Further, when it is not necessary to distinguish between the front electrode and the back electrode, they are simply referred to as the electrode 11 and the double-sided electrode 11.

  A heat sink (heat radiating member) 20 made of metal is electrically and mechanically connected to each electrode 11 of the semiconductor element 10. For example, one heat sink 20 is electrically and mechanically connected to the emitter electrode (one of the double-sided electrodes 11) of the semiconductor element 10, and the other heat sink 20 is the collector electrode (of the double-sided electrode 11). The other is electrically and mechanically connected. Thus, the semiconductor device 100 is provided with at least two heat sinks 20.

  The back electrode 11 of the semiconductor element 10 is connected to the heat sink 20 via a conductive connecting member such as solder. On the other hand, the surface electrode 11 of the semiconductor element 10 is connected to the heat sink 20 via a block body 30 made of metal. Thus, the semiconductor device 100 can be rephrased as a double-sided heat dissipation structure that radiates heat from both sides of the semiconductor element 10 using the heat sink 20.

  The surface electrode 11 and the block body 30 are connected via a conductive connection member such as solder. Similarly, the block body 30 and the heat sink 20 are connected via a conductive connection member. Note that the heat sink 20 connected to the front electrode 11 and the heat sink 20 connected to the back electrode 11 may have the same shape (for example, a rectangular parallelepiped shape) and size. However, the shape and size of the heat sinks 20 may be slightly different due to manufacturing errors.

  The heat sink 20 has a function as a heat radiating part for radiating heat generated from the semiconductor element 10 and also functions as a part of an external connection terminal for electrically connecting the semiconductor device 100 and an external device. It has a function. Each of the heat sinks 20 is provided integrally with each large current terminal 71 or is connected to each large current terminal 71 via a conductive connection member, and functions as a part of the external connection terminal. To do.

  Each heat sink 20 is exposed to the outside of the mold resin 60 at the back surface of the surface facing the semiconductor element 10. The back surface of the heat sink 20 is a portion indicated by reference numeral 21 in FIGS. Reference numeral 21 denotes a heat radiating surface which is a part functioning as a heat radiating portion for radiating heat generated from the semiconductor element 10. Therefore, each heat radiating surface 21 is electrically connected to one of the large current terminals 71. For example, the heat dissipation surface 21 of the heat sink 20 facing the surface electrode 11 is electrically connected to the large current terminal 71 on the left side of FIG. On the other hand, the heat dissipation surface 21 of the heat sink 20 facing the back electrode 11 is electrically connected to the large current terminal 71 on the right side of FIG.

  The heat sink 20 is made of, for example, a metal material of any one of Cu, Au, Ag, Al, Mo, or an alloy containing at least one of these metals in order to ensure thermal conductivity and electrical conductivity. is there. However, even if it is other than these metal materials, if it is excellent in thermal conductivity and electrical conductivity, it can be adopted.

  At least one of the semiconductor elements 10 is electrically connected to a small current terminal 72 (signal terminal) via a bonding wire (not shown). The small current terminal 72 is a terminal through which a control signal for the semiconductor element flows, and a sufficiently small current flows through the small current terminal 71. Several small current terminals 72 are provided for one semiconductor element 10.

  Incidentally, in the semiconductor device 100, in addition to the large current terminal 71 and the small current terminal 72, the heat radiation surface 21 (part of the heat sink 20) electrically connected to the electrode 11 of the semiconductor element 10 is formed of the mold resin 60. Exposed outside. Such a state is not very preferable. For example, as described above, the semiconductor device 100 may be sandwiched between the cooling unit 210 and the cooling unit 220 and attached to the cooler 200. In this case, in the semiconductor device 100, each heat radiating surface 21 is disposed to face the cooling unit 210 or the cooling unit 220. However, the heat radiating surface 21 and the cooling unit 210 and the heat radiating surface 21 and the cooling unit 220 need to be electrically insulated.

  Therefore, the semiconductor device 100 is provided with an insulating sheet 40 so as to cover the heat dissipation surface 21. The insulating sheet 40 corresponds to the insulating member in the claims of the present invention. The insulating sheet 40 covers the entire heat radiation surface 21 (the entire surface). In other words, the insulating sheet 40 covers the entire part of the heat sink 20 that is exposed as a heat dissipation surface from the mold resin 60.

  Therefore, the shape and size of the insulating sheet 40 are not particularly limited as long as they cover the entire heat radiating surface 21 and reach the mold resin 60 (concave portion 60a) around the heat radiating surface 21. In the present embodiment, as an example, a rectangular insulating sheet 40 is employed as shown in FIG. Furthermore, in the present embodiment, the insulating sheet 40 having a rectangular shape and a rounded corner (a shape in which the corner is R-shaped and a corner is rounded) is employed. Thus, the stress applied to the corners can be reduced by rounding the corners.

  Moreover, the thickness of the insulating sheet 40 is sufficient as long as the insulating property of the heat radiating surface 21 can be secured without extremely hindering the heat radiating property from the heat radiating surface 21. Furthermore, the material of the insulating sheet 40 is, for example, epoxy resin, alumina powder, silicon nitride powder, aluminum nitride powder, or boron nitride powder, or at least two kinds of these powders. What mixed the mixture which consists of as an inorganic filler etc. can be used.

  Further, as shown in FIG. 2, the insulating sheet 40 in the present embodiment has its own end (edge) bonded to a recess 60 a provided in the mold resin 60. That is, the mold resin 60 is provided with a recess 60a at a position surrounding the heat radiating surface 21 on each of both surfaces where the heat radiating surface 21 is exposed. The recess 60a is a portion that is recessed from the periphery of the recess 60a on the surface where the heat radiation surface 21 of the mold resin 60 is exposed. In the present embodiment, as an example, a recess 60 a that surrounds the heat dissipation surface 21 and is provided in an annular shape is employed. In other words, the recess 60 a is a groove provided so as to surround the heat radiating surface 21. The shape and depth of the recess 60a are not particularly limited.

  However, as shown in FIG. 2, the recess 60 a is located at a position where the recess 60 a provided on the surface of the mold resin 60 and the recess 60 a provided on the back surface of the mold resin 60 face each other with the mold resin 60 interposed therebetween. It is preferable to provide it. That is, it is preferable that the upper concave portion 60a in FIG. 2 and the lower concave portion 60a in FIG. By doing in this way, the insulating sheet 40 of the same shape and the same size can be bonded to each surface of the mold resin 60. That is, the insulating sheet 40 can be made into a common part on each surface of the mold resin 60.

  Further, as shown in FIG. 1 and the like, the semiconductor device 100 is attached to the mold resin 60 with the metal film 50 covering at least the boundary between the end portion of the insulating sheet 40 and the mold resin 60. The metal film 50 corresponds to the protective member in the claims of the present invention.

  Further, as shown in FIG. 2, the metal film 50 is attached to the mold resin 60 in a state where the end portion is disposed in the recess 60a. That is, both the end portion of the insulating sheet 40 and the end portion of the metal film 50 are disposed in the recess 60a. In the present embodiment, the metal film 50 is provided so as to cover the entire exposed surface of the insulating sheet 40.

  Therefore, the shape and size of the metal film 50 are not particularly limited as long as it covers the entire exposed surface of the insulating sheet 40 and reaches the recess 60a. In the present embodiment, as an example, a rectangular metal film 50 is employed as shown in FIG. Furthermore, in the present embodiment, the metal film 50 that has a rectangular shape and has rounded corners (the corners are rounded and the corners are rounded) is employed. Thus, the stress applied to the corners can be reduced by rounding the corners.

  The thickness of the metal film 50 is sufficient as long as it has a heat capacity that does not hinder heat dissipation from the heat dissipation surface 21. Furthermore, as the material of the metal film 50, for example, Al, Cu or the like can be adopted. The metal film 50 is a part that contacts the cooling unit 210 or the cooling unit 220 when the semiconductor device 100 is attached to the cooler 200. Therefore, it is preferable that the metal film 50 is made of a material equivalent to the material of the cooling unit 210 and the cooling unit 220 because adhesion with the cooling unit 210 and the cooling unit 220 is improved.

  Thus, by providing the metal film 50, the adhesion between the mold resin 60 and the insulating sheet 40 at the boundary between the end portion of the insulating sheet 40 and the mold resin 60 can be improved. Moreover, it can suppress that the adhesive force in the boundary of the edge part of the insulating sheet 40 and the mold resin 60 falls because the edge part of the insulating sheet 40 deteriorates by moisture absorption etc. Further, by using the metal film 50 as the protective member, it is possible to suppress the peeling of the insulating sheet 40 due to mechanical stress. Furthermore, by covering the entire exposed surface of the insulating sheet 40 with the metal film 50, the entire exposed surface of the insulating sheet 40 is prevented from mechanical stress while suppressing moisture absorption of the insulating sheet 40. Can be protected.

  In the present embodiment, the semiconductor device 100 provided with the metal film 50 is employed. However, the present invention can achieve the object even if the metal film 50 is not provided. Further, the protective member is not limited to the metal film 50. As the protective member, for example, a resin material that can prevent moisture from entering the boundary between the insulating sheet 40 and the mold resin 60, or an end portion of the insulating sheet 40 that can be prevented from peeling from the mold resin 60. Even a resin material can be used.

  Here, a method for manufacturing the semiconductor device 100 will be described. Here, the description will focus on the characteristic features of the present invention.

  First, the semiconductor element 10 and the two heat sinks 20 connected to each electrode 11 are molded with a molding resin 60 (that is, an insulating resin) (molding process). In this molding step, a mold having a convex portion is used to provide the concave portion 60a in the molded resin 60 after molding. This mold has a convex portion that protrudes from the periphery at a position that surrounds a region of the inner surface of the mold that faces the heat radiation surface 21 of the heat sink 20. That is, it molds using the metal mold | die which has a convex part in the shape according to the shape of the formed recessed part 60a. As a result, as shown in FIG. 4, a formed body having a recess 60 a and sealing the semiconductor element 10, the heat sink 20, and the like with the mold resin 60 is obtained.

  When manufacturing the semiconductor device 100 as in the present embodiment, one heat sink 20 is placed on the bottom surface of the mold and molded to expose one surface of the one heat sink 20 as the heat radiating surface 21 from the mold resin 60. (See FIG. 4). However, as shown in FIG. 4, it is difficult to expose the other heat sink 20 from the mold resin 60 as a heat radiating surface 21 just by molding.

  Therefore, as shown in FIG. 4, one surface of the heat sink 20 is exposed as the heat radiating surface 21 from the mold resin 60 by cutting the molded body to a cutting position indicated by a two-dot chain line. That is, after the molding process, one surface of the molded body is cut to expose one surface of the heat sink 20 from the mold resin 60 as the heat radiating surface 21 (cutting process). In other words, after the molding process, a surface exposing process for exposing the heat radiation surface 21 from the mold resin 60 is performed.

  After this cutting process, the insulating sheet 40 is affixed on both heat radiation surfaces 21 side (affixing process). In this sticking step, the end of the insulating sheet 40 is bonded to the recess 60 a of the mold resin 60 while covering the entire heat radiation surface 21 with the insulating sheet 40. Further, in the present embodiment, after the attaching step, the metal film 50 is attached to the mold resin 60 while covering the boundary between the end portion of the insulating sheet 40 and the mold resin 60 (attachment step). At this time, the edge of the metal film 50 is bent so as to cover the boundary between the end of the insulating sheet 40 and the mold resin 60. In the attaching step, the metal film 50 may be attached to the mold resin 60 while covering the entire exposed surface of the insulating sheet 40.

  As described above, by adhering the end portion of the insulating sheet 40 covering the heat radiation surface 21 into the recess 60a of the mold resin 60, the bonding area between the insulating sheet 40 and the mold resin 60 can be increased. Therefore, even in the semiconductor device 100 having a double-sided heat dissipation structure in which the heat dissipation surface 21 is exposed on both surfaces of the mold resin 60, the adhesion between the mold resin 60 and the insulating sheet 40 can be ensured. Therefore, the semiconductor device 100 in which the insulating sheet 40 is difficult to peel off from the mold resin 60 can be manufactured.

  In addition, by performing the attachment process in this way, the adhesion between the mold resin 60 and the insulating sheet 40 at the boundary between the end portion of the insulating sheet 40 and the mold resin 60 can be improved. Moreover, it can suppress that the adhesive force in the boundary of the edge part of the insulating sheet 40 and the mold resin 60 falls because the edge part of the insulating sheet 40 deteriorates by moisture absorption etc. That is, it is possible to manufacture the semiconductor device 100 in which the insulating sheet 40 is more difficult to peel off from the mold resin 60.

  Further, by adopting the metal film 50 as the protective member in this way, the semiconductor device 100 in which peeling of the insulating member due to mechanical stress is suppressed can be manufactured. Furthermore, by covering the entire exposed surface of the insulating sheet 40 with the metal film 50, moisture absorption of the insulating sheet 40 is suppressed, and the entire exposed surface of the insulating sheet 40 is protected from mechanical stress. The semiconductor device 100 can be manufactured.

  In addition, as described above, the flatness required for the heat radiating surface 21 can be ensured by exposing the heat radiating surface 21 from the mold resin 60 by cutting. Therefore, when the protective sheet 40 and the metal film 50 are provided on the heat radiation surface 21, the flatness of the metal film 50 (that is, the flatness of one surface of the semiconductor device 100) can be ensured to a required level. Therefore, when the semiconductor device 100 is attached to the cooler 200, the adhesion between the metal film 50, the cooling unit 210, and the cooling unit 220 can be improved.

  At the same time as the attaching step, the metal film 50 may be attached to the mold resin 60 (attachment step) while covering the boundary between the end portion of the insulating sheet 40 and the mold resin 60. As described above, the same effects as those in the case where the pasting step is performed after the cutting step can be obtained, and the manufacturing time of the semiconductor device 100 can be further shortened.

  Further, the metal film 50 may be attached by fitting (press-fitting) its own end into the recess 60a, or may be attached to the mold resin 60 with a fixing member such as a screw. Good (may be fixed).

  As described above, the present invention can achieve the object even if the metal film 50 is not provided. Therefore, when adopting a semiconductor device in which the metal film 50 is not provided, the attachment process is naturally not necessary. Further, as described above, the protective member is not limited to the metal film 50. Therefore, when a resin material is employed as the protection member, it is a matter of course that an attachment process for attaching the protection member made of the resin material is performed.

  As described above, in the semiconductor device 100, the end portion of the insulating sheet 40 that covers the heat radiation surface 21 is bonded to the recess 60 a provided in the mold resin 60. Thus, the adhesion area of the insulating sheet 40 and the mold resin 60 can be increased by adhering the end portion of the insulating sheet 40 into the recess 60a of the mold resin. Therefore, even in the semiconductor device 100 having a double-sided heat dissipation structure in which the heat dissipation surface 21 is exposed on both surfaces of the mold resin 60, the adhesion between the mold resin 60 and the insulating sheet 40 can be ensured. That is, the insulating sheet 40 can be prevented from peeling off from the mold resin 60.

  As mentioned above, although preferable embodiment of this invention was described, this invention is not restrict | limited to the embodiment mentioned above at all, and various deformation | transformation are possible in the range which does not deviate from the meaning of this invention.

(Modification 1)
Here, the semiconductor device 101 according to the first modification will be described with reference to FIG. Note that common points between the semiconductor device 101 of the first modification and the semiconductor device 100 of the above-described embodiment are given the same reference numerals in the drawings, and the description thereof is omitted.

  As shown in FIG. 5, in the semiconductor device 101, the insulating sheet 40 and the mold resin 60, and the metal film 50 and the mold resin 60 are bonded (fixed) with an adhesive member (adhesive) 80 made of a resin material. ) That is, the semiconductor device 101 is bonded to the mold resin 60 by the adhesive 80 at a position where the metal film 50 surrounds the insulating sheet 40. Therefore, the portion of the metal film 50 that is bonded to the mold resin 60 by the adhesive 80 is provided so as to surround the insulating sheet 40. In other words, this portion is provided in an annular shape around (outside) the insulating sheet 40.

  When manufacturing the semiconductor device 101, an uncured resin 80 is applied in the recess 60a after the cutting process (application process). Then, the pasting process is performed after the coating process, and after disposing the insulating sheet 40 and the metal film 50 on the uncured resin 80 in the recess 60a, the uncured resin 80 is cured.

  Even the semiconductor device 101 according to the first modification can achieve the same effects as those of the above-described embodiment. Furthermore, the adhesion between the protective sheet 40 and the mold resin 60 and the adhesion between the metal film 50 and the mold resin 60 can be improved. Along with this, the insulating sheet 40 can be further prevented from peeling off from the mold resin 60. Even if the insulating sheet 40 is peeled off from the mold resin 60, the adhesive 80 is peeled off first at the interface with the mold resin 60. Therefore, the end portion of the insulating sheet 40 remains covered with the adhesive 80.

  In Modification 1, the object can be achieved even if the metal film 50 is not provided. Moreover, as a protection member, it can suppress that the resin material which can suppress a water | moisture content permeating into the boundary of the insulating sheet 40 and the mold resin 60, or that the edge part of the insulating sheet 40 peels from the mold resin 60, for example. Even such a resin material can be employed.

(Modification 2)
Here, the semiconductor device 102 in Modification 2 will be described with reference to FIG. In addition, the points common to the semiconductor device 102 of the modification 2 and the semiconductor device 100 of the above-described embodiment are given the same reference numerals in the drawings and the description thereof is omitted. Moreover, since the manufacturing method is substantially the same as that of the above-mentioned embodiment, description is abbreviate | omitted.

  In the semiconductor device 102 shown in FIG. 6, a protective member recess 61 b in which an end of the metal film 50 is disposed is provided at a position surrounding the recess 61 a in the mold resin 61. The protective member recess 61b surrounds the recess 61a and is provided in an annular shape. In other words, the semiconductor device 102 is provided with double grooves such as a recess 61a and a protective member recess 61b. The protective member recess 61b is provided deeper than the depth of the recess 61a.

  Further, the semiconductor device 102 is bonded to the mold resin 60 with an adhesive 81 at a position where the metal film 50 surrounds the insulating sheet 40 (that is, the protective member recess 61b). Therefore, the portion of the metal film 50 that is bonded to the mold resin 60 by the adhesive 81 is provided so as to surround the insulating sheet 40. In other words, this portion is provided in an annular shape around (outside) the insulating sheet 40. The material of the adhesive 81 is not particularly limited as long as the metal film 50 and the mold resin 60 can be bonded to each other.

  Even the semiconductor device 102 according to Modification 2 can achieve the same effects as those of the above-described embodiment. Furthermore, the insulating sheet 40 can be reliably covered with the metal film 50 by doing in this way. Therefore, it can be further suppressed that the adhesion strength at the boundary between the end portion of the insulating sheet 40 and the mold resin 60 is lowered due to the deterioration of the insulating sheet 40 due to moisture absorption or the like.

  In the second modification as well, as the protective member, for example, a resin material that can prevent moisture from entering the boundary between the insulating sheet 40 and the mold resin 60, or an end portion of the insulating sheet 40 is the mold resin 60. Even a resin material that can be prevented from being peeled off can be employed.

(Modification 3)
Here, the semiconductor device 103 in Modification 3 will be described with reference to FIG. Note that common points between the semiconductor device 103 of the first modification and the semiconductor device 100 of the above-described embodiment are given the same reference numerals in the drawings, and description thereof is omitted. Moreover, since the manufacturing method is substantially the same as that of the above-mentioned embodiment, description is abbreviate | omitted. Moreover, since the manufacturing method is substantially the same as that of the above-mentioned embodiment, description is abbreviate | omitted.

  In the semiconductor device 103 shown in FIG. 7, the insulating sheet 40 is bonded to the entire inside of the recess 60a. In other words, the recess 60a is filled with the insulating sheet 40, and the insulating sheet 40 is bonded. Furthermore, it can be paraphrased that the insulating sheet 40 is accommodated in all the recesses 60a and the insulating sheet 40 is adhered.

  Even the semiconductor device 103 according to Modification 3 can achieve the same effects as those of the above-described embodiment. Furthermore, by doing in this way, since the contact area of the recessed part 60a and the insulating sheet 40 can be enlarged, the adhesive force of the recessed part 60a and the insulating sheet 40 can be improved further.

  In Modification 3, the object can be achieved even if the metal film 50 is not provided. Moreover, as a protection member, it can suppress that the resin material which can suppress a water | moisture content permeating into the boundary of the insulating sheet 40 and the mold resin 60, or that the edge part of the insulating sheet 40 peels from the mold resin 60, for example. Even such a resin material can be employed.

(Modification 4)
Here, the semiconductor device 104 according to Modification 4 will be described with reference to FIG. Note that the common points of the semiconductor device 104 of the modification 4 and the semiconductor device 100 of the above-described embodiment are given the same reference numerals in the drawings, and the description thereof is omitted. Moreover, since the manufacturing method is substantially the same as that of the above-mentioned embodiment, description is abbreviate | omitted.

  In the semiconductor device 104 shown in FIG. 8, the insulating sheet 40 is bonded to the entire inside of the recess 60 a as in the third modification. Further, the semiconductor device 104 is bonded to the mold resin 60 with an adhesive 82 at a position where the metal film 50 surrounds the insulating sheet 40. More specifically, the portion of the metal film 50 that is bonded to the mold resin 60 by the adhesive 82 is provided so as to surround the insulating sheet 40. In other words, this portion is provided in an annular shape around (outside) the insulating sheet 40. The material of the adhesive 82 is not particularly limited as in the case of the adhesive 81 of the second modification, and any material that can bond the metal film 50 and the mold resin 60 may be used.

  Even the semiconductor device 104 according to the fourth modification can achieve the same effects as those of the above-described embodiment, the second modification, and the third modification. Also in Modification 4, for example, as the protective member, for example, a resin material that can prevent moisture from entering the boundary between the insulating sheet 40 and the mold resin 60, or the end portion of the insulating sheet 40 is the mold resin 60. Even a resin material that can be prevented from being peeled off can be employed.

(Modification 5)
Here, the semiconductor device 105 according to Modification 5 will be described with reference to FIG. Note that common points between the semiconductor device 105 of the modification 5 and the semiconductor device 100 of the above-described embodiment are given the same reference numerals in the drawings, and the description thereof is omitted. Moreover, since the manufacturing method is substantially the same as that of the above-mentioned embodiment, detailed description is abbreviate | omitted.

  The semiconductor device 105 shown in FIG. 9 is provided with a recessed portion that is recessed from the periphery at a portion of the recessed portion 62a of the mold resin 62 where the insulating sheet 40 contacts. In other words, the recesses 62a have different depths in stages. Further, the recess 62a can be rephrased into a twenty-groove shape. For example, cutting (such as blasting) or cold spraying can be used as the method of forming the recess 62a having such a shape. Further, the concave portion 62a having such a shape can be formed depending on the shape of the protrusion of the mold.

  Even the semiconductor device 105 according to Modification 5 can achieve the same effects as those of the above-described embodiment. Furthermore, since the contact area of the recessed part 62a and the insulating sheet 40 can be enlarged, the adhesive force of the recessed part 62a and the insulating sheet 40 can be improved further.

  Note that, in the fifth modification, the object can be achieved even if the metal film 50 is not provided. Moreover, as a protective member, it can suppress that the resin material which can suppress a water | moisture content permeating into the boundary of the insulating sheet 40 and the mold resin 62, or that the edge part of the insulating sheet 40 peels from the mold resin 62, for example. Even such a resin material can be employed.

(Modification 6)
Here, the semiconductor device 106 according to Modification 6 will be described with reference to FIG. Note that common points between the semiconductor device 106 of the modification 6 and the semiconductor device 100 of the above-described embodiment are given the same reference numerals in the drawings and description thereof is omitted. Moreover, since the manufacturing method is substantially the same as that of the above-mentioned embodiment, detailed explanation is omitted.

  The semiconductor device 106 shown in FIG. 10 is provided with a recessed portion that is recessed from the periphery and a protruded portion that protrudes from the periphery at the portion of the recess 63 a of the mold resin 63 that contacts the insulating sheet 40. In other words, the concave portion 63a has a concave-convex bottom surface. Furthermore, the concave portion 63a can be rephrased as a protrusion protruding from the periphery on the bottom surface. In addition, the recessed part 63a of such a shape can also be formed by the method similar to the above-mentioned modification 5.

  Even the semiconductor device 106 according to Modification 6 can achieve the same effects as those of the above-described embodiment. Furthermore, since the contact area of the recessed part 63a and the insulating sheet 40 can be enlarged, the adhesive force of the recessed part 63a and the insulating sheet 40 can be improved further.

  Note that the purpose of the modified example 6 can be achieved even if the metal film 50 is not provided. Moreover, as a protection member, it can suppress that the resin material which can suppress a water | moisture content permeating into the boundary of the insulating sheet 40 and the mold resin 63, or that the edge part of the insulating sheet 40 peels from the mold resin 63, for example. Even such a resin material can be employed.

(Modification 7)
Here, the semiconductor device 107 in Modification 7 will be described with reference to FIG. Note that the common points of the semiconductor device 107 of the modification 7 and the semiconductor device 100 of the above-described embodiment are given the same reference numerals in the drawings, and the description thereof is omitted. Moreover, since the manufacturing method is substantially the same as that of the above-mentioned embodiment, description is abbreviate | omitted.

  A semiconductor device 107 shown in FIG. 11 is provided with a metal film 51 in a ring shape. The metal film 51 is attached to the mold resin 60 while covering the boundary between the end portion of the protective sheet 40 and the mold resin 60. However, unlike the metal film 50 in the above-described embodiment, the metal film 51 does not cover the entire exposed surface of the insulating sheet 40. However, even the semiconductor device 107 according to Modification 7 can achieve the same effects as those of the above-described embodiment.

  In the modified example 7 as well, as the protective member, for example, a resin material that can prevent moisture from entering the boundary between the insulating sheet 40 and the mold resin 60, or the end portion of the insulating sheet 40 is the mold resin 60. Even a resin material that can be prevented from being peeled off can be employed.

(Modification 8)
Here, the semiconductor device 108 in Modification 8 will be described with reference to FIG. Note that the common points of the semiconductor device 108 of the first modification and the semiconductor device 100 of the above-described embodiment are given the same reference numerals in the drawings, and the description thereof is omitted. Moreover, since the manufacturing method is substantially the same as that of the above-mentioned embodiment, description is abbreviate | omitted. Moreover, since the manufacturing method is substantially the same as that of the above-mentioned embodiment, description is abbreviate | omitted.

  The semiconductor device 108 shown in FIG. 12 is a position that surrounds the heat radiating surface 21 in the mold resin 64, and a recess 64 a is provided at a position corresponding to each of the four corners of the heat radiating surface 21. Yes. That is, unlike the recess 60a of the above-described embodiment, the recess 64a in the semiconductor device 108 is not provided in an annular shape. As described above, the recess 64 a may not be provided in an annular shape as long as it surrounds the heat dissipation surface 21. Even the semiconductor device 108 according to Modification 8 can achieve the same effects as those of the above-described embodiment. In addition, illustration of the protection sheet 40 is abbreviate | omitted in FIG.

  Note that the purpose of the modified example 8 can be achieved even if the metal film 50 is not provided. Moreover, as a protection member, it can suppress that the resin material which can suppress a water | moisture content permeating into the boundary of the insulating sheet 40 and the mold resin 64, or that the edge part of the insulating sheet 40 peels from the mold resin 64, for example. Even such a resin material can be employed.

(Modification 9)
Here, the semiconductor device 109 according to Modification 9 will be described with reference to FIG. In addition, the points common to the semiconductor device 109 of the modification 9 and the semiconductor device 100 of the above-described embodiment are given the same reference numerals in the drawings and the description thereof is omitted. Moreover, since the manufacturing method is substantially the same as that of the above-mentioned embodiment, description is abbreviate | omitted.

  A semiconductor device 109 shown in FIG. 13 is provided with a metal film 52 in a cross shape (X shape). The metal film 52 is attached to the mold resin 60 while covering the boundary between the corners (four corners) of the protective sheet 40 and the mold resin 60. However, unlike the metal film 50 in the above-described embodiment, the metal film 52 does not cover the entire exposed surface of the insulating sheet 40. However, even the semiconductor device 109 according to Modification 9 can achieve the same effects as those of the above-described embodiment.

  In the modified example 9 as well, as the protective member, for example, moisture can be prevented from entering the boundary between the insulating sheet 40 and the mold resin 60 (the boundary between the corner of the insulating sheet 40 and the mold resin 60). Even a resin material that can prevent the corner portion of the insulating sheet 40 from being peeled off from the mold resin 60 can be employed.

(Modification 10)
Here, the semiconductor device 110 according to Modification 10 will be described with reference to FIG. Note that common points between the semiconductor device 110 of the modification 10 and the semiconductor device 100 of the above-described embodiment are given the same reference numerals in the drawings, and the description thereof is omitted. Moreover, since the manufacturing method is substantially the same as that of the above-mentioned embodiment, description is abbreviate | omitted.

  A semiconductor device 110 illustrated in FIG. 14 includes an insulating sheet 41 whose corners are not rounded and a metal film 53 whose corners are not rounded. Thus, this invention is employ | adopted even if it is the insulating sheet 41 whose corner | angular part is not a round shape. Similarly, the present invention employs even the metal film 53 whose corners are not rounded. Even the semiconductor device 110 according to the modified example 14 can achieve the same effects as those of the above-described embodiment.

  Note that the purpose of the modified example 10 can be achieved even if the metal film 53 is not provided. Moreover, as a protection member, it can suppress that the resin material which can suppress a water | moisture content permeating into the boundary of the insulating sheet 41 and the mold resin 60, or that the edge part of the insulating sheet 41 peels from the mold resin 60, for example. Even such a resin material can be employed.

(Modification 11)
Here, the semiconductor devices 111 and 112 in the modified example 11 will be described with reference to FIGS. Note that common points between the semiconductor devices 111 and 112 of the modification 11 and the semiconductor device 100 of the above-described embodiment are given the same reference numerals in the drawings and description thereof is omitted. Moreover, since the manufacturing method is substantially the same as that of the above-mentioned embodiment, description is abbreviate | omitted.

  A semiconductor device 111 shown in FIG. 15A is a so-called 6-in-1 type semiconductor device including six semiconductor elements 10. Similarly, the semiconductor device 112 illustrated in FIG. 15B is a so-called 6-in-1 type semiconductor device including six semiconductor elements 10. As described above, the present invention can be applied even to a 6-in-1 semiconductor device. That is, even in the semiconductor devices 111 and 112 in the modified example 11, the same effect as in the above-described embodiment can be obtained.

  In addition, you may make it provide the common protective sheet 40 and the metal film 50 with respect to the several thermal radiation surface 21 like the semiconductor device 111 shown to Fig.15 (a). Further, as in the semiconductor device 112 shown in FIG. 15B, the protective sheet 40 and the metal film 50 may be individually provided for each of the plurality of heat radiation surfaces 21.

  The modification 11 can achieve the object even if the metal film 50 is not provided. Moreover, as a protection member, it can suppress that the resin material which can suppress a water | moisture content permeating into the boundary of the insulating sheet 40 and the mold resin 60, or that the edge part of the insulating sheet 40 peels from the mold resin 60, for example. Even such a resin material can be employed.

(Modification 12)
Here, the semiconductor device 100 according to the modification 12 will be described with reference to FIG. In Modification 12, the configuration of the semiconductor device 100 is the same as that in the above-described embodiment, but the manufacturing method is different from that in the above-described embodiment. Therefore, in the modified example 12, the same points as those of the semiconductor device 100 of the above-described embodiment are denoted by the same reference numerals in the drawings and the description thereof is omitted.

  As shown in FIG. 16, in the molded body after the molding process and before the cutting process, the thickness of the mold resin 60 is thinner on the outside of the recess 60a than on the inside of the recess 60a (above the heat sink 20). In other words, it can be said that the molded body after the molding process and before the cutting process is thinner on the outside of the recess 60a than on the inside of the recess 60a. In other words, the thickness of the mold resin 60 (molded body) after the molding process and before the cutting process is thinner in the portion surrounding the recess 60a than in the portion surrounded by the recess 60a with respect to the recess 60a.

  More specifically, the thickness inside the recessed portion 60a in the molded body is the same as that of the above-described embodiment, that is, the heat sink 20, the semiconductor element 10, the block body 30, the heat sink 20, and the insulating resin (mold resin 60). It is the grade which added the thickness of. That is, the mold resin 60 is formed on the heat sink inside the recess 60a in the molded body. On the other hand, the thickness of the molded body outside the recess 60 a is the sum of the thicknesses of the heat sink 20, the semiconductor element 10, the block body 30, and the heat sink 20. That is, it is equal to the thickness from the bottom surface (lower plane in FIG. 16) to the cutting position of the molded body.

  Even in the manufacturing method shown in the modified example 12, the same effects as those of the above-described embodiment can be obtained. Furthermore, in the molding process, by manufacturing the molded body in this way, the cutting range in the subsequent cutting process can be reduced.

  In addition, although the above-mentioned embodiment and the modifications 1-12 can also be implemented independently, respectively, it is also possible to implement in combination suitably.

  DESCRIPTION OF SYMBOLS 10 Semiconductor element, 20 Heat sink, 30 Block body, 40 Insulating sheet, 50 Metal film, 60 Mold resin, 60a Groove part, 71 High current terminal, 71 Small current terminal, 100 Semiconductor device

Claims (16)

A semiconductor device having a double-sided heat dissipation structure that dissipates heat from both sides of a semiconductor element (10) having electrodes (11) on both sides,
The semiconductor element;
Two heat dissipating members (20) made of metal connected to each of the electrodes;
A mold resin (60, 61, 62, 63, 64) that seals the semiconductor element and the heat radiating member while exposing a part of each heat radiating member as a heat radiating surface (21);
An insulating member (40) covering the heat radiation surface,
The mold resin is provided with a recess (60a, 61a, 62a, 63a, 64a) at a position surrounding the heat dissipation surface on each of both surfaces where the heat dissipation surface is exposed,
The insulating member covers the entire heat radiation surface, and has an end bonded to the recess.   The semiconductor device according to claim 1, further comprising a protective member (50, 51, 52, 53) attached to the mold resin while covering a boundary between the end portion of the insulating member and the mold resin. .   The semiconductor device according to claim 2, wherein the protection member is made of metal.   4. The semiconductor device according to claim 2, wherein the protective member (50, 53) covers the entire exposed surface of the insulating member.   The semiconductor device according to any one of claims 2 to 4, wherein corners of the insulating member (40) and the protection member (50, 51) have a rounded shape.   6. The semiconductor according to claim 2, wherein the protective member is bonded to the mold resin by an adhesive (80, 81, 82) at a position surrounding the insulating member. 7. apparatus.   The said mold resin (61) is provided with the recessed part (61b) for protection members in which the edge part of the said protection member is arrange | positioned in the position surrounding the said recessed part (61a). The semiconductor device as described in any one.   The portion of the concave portion (62a, 63a) with which the insulating member comes into contact is provided with either a concave shape portion recessed from the periphery or a convex shape portion protruding from the periphery. The semiconductor device according to any one of 1 to 7.   The semiconductor device according to claim 1, wherein the insulating member is bonded to the entirety of the recesses (60 a, 61 a, 62 a, 63 a).   10. The concave portion provided on the surface of the mold resin and the concave portion provided on the back surface of the mold resin are provided at positions facing each other through the mold resin. The semiconductor device according to any one of the above. A method for manufacturing a semiconductor device having a double-sided heat dissipation structure that radiates heat from both sides of a semiconductor element (10) having electrodes (11) on both sides,
The step of molding the semiconductor element and two heat dissipating members (20) made of metal connected to the electrodes with a molding resin (60, 61, 62, 63, 64), corresponding to the heat dissipating members. A molding step of molding using a mold having a convex portion protruding from the periphery at a position surrounding the region;
After the molding step, the cutting step of cutting the surface and exposing one surface of the heat radiating member as the heat radiating surface (21) from the mold resin,
A step of attaching an insulating member (40) to the heat radiating surface side after the cutting step, and covering the entire heat radiating surface with the insulating member while the mold resin formed by the convex portion of the mold. A bonding step of bonding the end of the insulating member into the recess (60a, 61a, 62a, 63a, 64a).   The attaching step of attaching the protective member (50, 51, 52, 53) to the mold resin while covering the boundary between the end portion of the insulating member and the mold resin after the attaching step. 11. A method for manufacturing a semiconductor device according to 11. Dependent on claim 11, simultaneously with the attaching step, comprising an attaching step of attaching the protective member (50, 51, 52, 53) to the mold resin while covering the boundary between the end portion of the insulating member and the mold resin. The method of manufacturing a semiconductor device according to claim 11.   14. The method of manufacturing a semiconductor device according to claim 12, wherein a metal is used as the protective member in the attaching step.   15. In the attachment step, the protective member (50, 53) is bonded to the mold resin while covering the entire exposed surface of the insulating member. The manufacturing method of the semiconductor device of description. After the cutting step, the coating step of applying an uncured resin (80) in the recess,
The said pasting process is performed after the said application | coating process, and after arrange | positioning the said insulating member on uncured resin, uncured resin is hardened | cured, It is any one of Claim 11 thru | or 15 characterized by the above-mentioned. A method for manufacturing the semiconductor device according to the item.

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