JP2013254902A - Tray, plasma processing apparatus, plasma processing method, and cover member - Google Patents

Abstract

PROBLEM TO BE SOLVED: To inhibit the abnormal shape of an outer peripheral portion on an upper surface of a substrate.SOLUTION: A substrate housing tray 22 is carried into a chamber 12 of a plasma processing apparatus 10, in which plasma treatment of substrates W is carried out, with the substrate W and is placed therein. The substrate housing tray 22 includes: a body part 50 which includes a first through hole 50a penetrating through the body part 50 in a thickness direction and housing the substrate W and a substrate support part 22d supporting an outer peripheral portion of a lower surface Wa of the substrate W housed in the first through hole 50a and is made of a carbon containing material 50; and a cover part 52 which includes a second through hole 52a penetrating through the cover part 52 in a thickness direction so that the substrate W passes through, is disposed above the body part 50 so that the substrate support part 22d of the body part 50 is exposed through the second through hole 52a in an upward view, and is made of a material that does not contain carbon.

Description

  The present invention relates to a tray for carrying a substrate in and out of a chamber in which the substrate is subjected to plasma processing, a plasma processing apparatus and a plasma processing method using the tray, and a tray cover member.

  Conventionally, a tray is sometimes used when a substrate is carried in and out of a chamber in which the substrate is subjected to plasma processing. For example, in the case of the plasma processing apparatus described in Patent Document 1, the tray supports a substrate accommodation hole that penetrates in the thickness direction and accommodates the substrate, and an outer peripheral edge portion of the lower surface of the substrate accommodated in the substrate accommodation hole. And a substrate support portion. A stage on which the substrate and the tray are placed is provided in the chamber of the plasma processing apparatus. On the upper surface of this stage, an island-shaped (convex) substrate mounting portion on which the lower surface of the tray is mounted is formed. The tray is placed on the upper surface of the stage, and the substrate is placed on the substrate placement portion that has entered the substrate accommodation hole of the tray. With the tray placed on the upper surface of the stage, the substrate placed on the substrate placing portion is subjected to plasma processing.

Japanese Patent No. 4361405

  By the way, in the case of the plasma processing apparatus described in Patent Document 1, the tray is exposed to plasma during the plasma processing of the substrate. When this tray is made of a carbon-containing material such as silicon carbide (SiC), the reaction product containing the carbon component of the tray (carbon-containing product) is generated when the tray is exposed to plasma and consumed. To do. Most of the reaction products of the carbon-containing product adhere to the outer peripheral edge portion of the upper surface of the substrate located in the vicinity of the tray. When the reaction product of the carbon-containing product adheres to the outer peripheral edge portion of the upper surface of the substrate, the selectivity to the mask of the outer peripheral edge portion of the upper surface of the substrate increases. As a result, the outer peripheral edge portion of the upper surface of the substrate is more likely to have a shape abnormality than the central portion.

  Therefore, the present invention can accommodate the outer peripheral edge portion of the upper surface of the substrate even if the tray is placed in the chamber in which the substrate is accommodated and the substrate is subjected to plasma processing and includes the carbon component. It is an object to suppress an abnormal shape.

In order to solve the above-mentioned problem, according to the first aspect of the present invention,
A tray for accommodating a substrate that is transported and placed with a substrate in a chamber of a plasma processing apparatus in which plasma processing of the substrate is performed,
A main body made of a carbon-containing material, having a first through-hole penetrating in the thickness direction and accommodating a substrate, and a substrate support portion supporting the outer peripheral edge portion of the lower surface of the substrate accommodated in the first through-hole And
A second through hole penetrating in the thickness direction so that the substrate can pass therethrough, and is disposed above the main body so that the substrate support portion of the main body is exposed through the second through hole when viewed from above; And a cover portion made of a material that does not contain a tray.

According to a second aspect of the invention,
The tray according to the first aspect is provided, wherein the opening edge on the lower side of the second through hole of the cover part is located inside the opening edge on the upper side of the first through hole of the main body part when viewed from above. The

According to a third aspect of the invention,
The tray according to the first aspect is provided, wherein the cover portion extends downward from the opening edge on the lower side of the second through hole and covers a part of the inner peripheral surface of the first through hole of the main body portion. The

According to a fourth aspect of the invention,
A plasma processing apparatus for plasma processing a substrate,
A chamber;
A main body made of a carbon-containing material, having a first through-hole penetrating in the thickness direction and accommodating a substrate, and a substrate support portion supporting the outer peripheral edge portion of the lower surface of the substrate accommodated in the first through-hole And a second through hole penetrating in the thickness direction so that the substrate can pass therethrough, and disposed above the main body portion so that the substrate support portion of the main body portion is exposed through the second through hole when viewed from above A cover portion made of a material not containing carbon, and a tray that can be carried into and out of the chamber;
A dielectric provided in the chamber and provided with a tray support portion for supporting the lower surface of the tray, a substrate placement portion on which the lower surface of the substrate is placed, and a recess for accommodating the substrate support portion of the main body portion of the tray. Members,
An electrode built in the dielectric member and having at least an electrode for electrostatically adsorbing the substrate to the substrate mounting portion;
When transporting the substrate, the outer peripheral edge portion of the lower surface of the substrate housed in the first through hole of the main body is supported by the substrate support portion of the tray,
During plasma processing of the substrate, the lower surface of the tray is supported by the tray support portion of the dielectric member, and the substrate is placed on the substrate placement portion of the dielectric member in a state of being separated from the substrate support portion of the main body portion of the tray, There is provided a plasma processing apparatus configured such that a substrate support portion of a main body portion of a tray is accommodated in a concave portion of a dielectric member.

According to a fifth aspect of the present invention,
The plasma processing according to the fourth aspect, wherein the opening edge on the lower side of the second through hole of the cover portion of the tray is located inside the opening edge on the upper side of the first through hole of the main body portion when viewed from above. An apparatus is provided.

According to a sixth aspect of the present invention,
The plasma processing according to the fourth aspect, wherein the cover portion of the tray extends downward from the opening edge on the lower side of the second through hole and covers a part of the inner peripheral surface of the first through hole of the main body portion. An apparatus is provided.

According to a seventh aspect of the present invention,
A plasma processing method for plasma processing a substrate in a chamber,
A main body made of a carbon-containing material, having a first through-hole penetrating in the thickness direction and accommodating a substrate, and a substrate support portion supporting the outer peripheral edge portion of the lower surface of the substrate accommodated in the first through-hole And a second through hole penetrating in the thickness direction so that the substrate can pass therethrough, and disposed above the main body portion so that the substrate support portion of the main body portion is exposed through the second through hole when viewed from above And a cover portion made of a material not containing carbon, and a tray that can be carried into and out of the chamber is prepared,
The substrate is accommodated in the first through hole of the main body portion of the tray and supported by the substrate support portion,
A chamber provided with a dielectric member comprising a tray support portion for supporting the lower surface of the tray, a substrate placement portion on which the lower surface of the substrate is placed, and a recess for accommodating the substrate support portion of the main body portion of the tray Into the tray that contains the substrate,
During plasma processing of the substrate, the lower surface of the tray is supported by the tray support portion of the dielectric member, and the substrate is placed on the substrate placement portion of the dielectric member in a state of being separated from the substrate support portion of the main body portion of the tray, Plasma processing in which the substrate support part of the main body of the tray is housed in the concave part of the dielectric member, and the substrate is electrostatically adsorbed to the substrate mounting part of the dielectric member by applying a voltage to the electrode built in the dielectric member A method is provided.

According to an eighth aspect of the present invention,
A tray made of a carbon-containing material, having a first through hole that penetrates in the thickness direction and accommodates the substrate, and a substrate support that supports the outer peripheral edge portion of the lower surface of the substrate accommodated in the first through hole A cover member for covering
Made from carbon-free material,
A second through-hole penetrating in the thickness direction so that the substrate can pass through,
A cover member is provided that is configured to be detachable from the tray so that the substrate support portion of the tray is exposed through the second through hole when viewed from above.

  According to the present invention, the outer peripheral edge portion of the upper surface of the substrate can be accommodated even if the tray that contains the substrate and contains the carbon component is contained in the chamber in which the plasma processing of the substrate is performed. The shape abnormality can be suppressed.

The block diagram of the plasma processing apparatus which concerns on one embodiment of this invention Schematic perspective view of tray, substrate, and stage Schematic perspective view of tray, substrate, and stage (tray placement state) Partial sectional view of tray and stage Partial sectional view of tray and stage (tray placement state) Partial cross-sectional enlarged view of the tray Partial cross-sectional enlarged view of a tray according to another embodiment Partial cross-sectional enlarged view of a tray according to another embodiment Partial cross-sectional enlarged view of a tray according to another embodiment Partial cross-sectional view of another embodiment of the stage and corresponding tray Stage of another embodiment and corresponding sectional view of a tray (tray placement state) 9A is a partial cross-sectional view of the stage shown in FIG. 9A and a corresponding tray in another embodiment. Partial cross-sectional view of the stage shown in FIG. 4A and the corresponding tray of another embodiment

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a configuration diagram of a plasma processing apparatus according to an embodiment of the present invention, and specifically shows a configuration of an ICP (inductively coupled plasma) type dry etching apparatus which is an example of a plasma processing apparatus. ing.

  The dry etching apparatus 10 includes a chamber (vacuum container) 12 constituting a processing chamber for performing plasma processing on a substrate W, and a top plate 14 made of a dielectric such as quartz by closing an upper end opening of the chamber 12. And an ICP coil 16 disposed on the top plate 14.

  The ICP coil 5 is electrically connected to a first high frequency power supply unit 18 having a matching circuit.

  A stage 20 functioning as a lower electrode to which a bias voltage is applied and functioning as a holding table for holding the substrate W is disposed at the bottom of the chamber 12 facing the top plate 14.

  The chamber 12 is provided with an openable / closable loading / unloading port (not shown) that communicates with, for example, a load dock chamber (not shown). Through this loading / unloading port, the tray 22 in a state where the substrate W is accommodated is loaded into and unloaded from the chamber 12 by a tray transfer mechanism (not shown).

Further, the chamber 12 is provided with a gas inlet 24 for introducing an etching gas into the chamber 12. For example, a gas such as BCl ₃ , Cl ₂ , Ar, O ₂ , or CF ₄ is introduced into the chamber 12 through the gas introduction port 24. Further, the chamber 3 is provided with an exhaust port 26, and a pressure control unit 28 including a vacuum pump, a pressure control valve, and the like is connected to the exhaust port 26.

  From here, the detail of the tray 22 which accommodated the board | substrate W and the stage 20 in which the tray 22 is mounted is demonstrated.

  2 and 3 are schematic perspective views of the substrate W, the tray 22, and the stage 20. FIG. 4A and 4B are partial cross-sectional views of the tray 22 and the stage 20.

  2 and 4A show a state before the tray 22 containing the substrate W is placed on the stage 20. As shown in FIG. 2, in the case of the present embodiment, the substrate W has a disk shape. The tray 22 is also disk-shaped. The shape of the substrate W and the tray 22 is not limited to a disk shape, and may be a polygonal shape such as a rectangular shape.

  The tray 22 penetrates from the upper surface 22a to the lower surface 22b of the tray 22, and includes a substrate accommodation hole 22c that accommodates the substrate W, and a plurality of claw-shaped substrate support portions that support the substrate W accommodated in the substrate accommodation hole 22c. 22d.

  The tray substrate receiving hole 22c is formed in a size that can accommodate the substrate W. The plurality of substrate support portions 22d are formed so as to protrude from the inner peripheral surface of the substrate accommodation hole 22c toward the center thereof. The substrate support portion 22d includes a tapered portion 22e that comes into contact with the outer peripheral edge portion of the lower surface Wa of the substrate W. The tapered portion 22e is configured by an inclined surface that extends from the upper surface 22a side of the tray 22 toward the lower surface 22b side and extends toward the center of the substrate accommodation hole 22c.

  When the substrate W is transported by the tray 22, the plurality of substrate support portions 22 d support the outer peripheral edge portion of the lower surface Wa of the substrate W, so that the substrate W can be accommodated without passing through the substrate accommodation hole 22 c of the tray 22. It is accommodated in the hole 22c. Further, the taper portion 22e of the substrate support portion 22d supports the substrate W, so that the center of the substrate W can be aligned (centered) with the center of the substrate accommodation hole 22c.

  Further details of the tray 22 will be described later.

  On the other hand, as shown in FIG. 2, the stage 20 is made of a dielectric material such as ceramics on the upper portion thereof, and a dielectric member 30 on which the substrate W and the tray 22 are placed, and a tray 22 that accommodates the substrate W. And a guide ring 32 for aligning the horizontal position with respect to the dielectric member 30.

  The guide ring 32 is annular and includes a tapered inner peripheral surface 32a in which the diameter of the lower end opening is smaller than the diameter of the upper end opening. The tapered inner peripheral surface 32 a of the guide ring 32 is engaged with the side surface 22 f of the tray 22 formed in a tapered shape, so that the tray 22 is placed in a state of being aligned with the dielectric member 30. . The orientation of the tray 22 with respect to the center of the tray 22 is aligned based on a characteristic part (mark) such as a notch 22g formed on the outer periphery of the tray 22 detected by a sensor or the like.

  The dielectric member 30 of the stage 20 includes a tray support portion 30a configured on the upper surface thereof to support the tray 22, and an island-shaped (convex) substrate formed on the upper surface and on which the lower surface Wa of the substrate W is placed. The mounting part 30b and the recessed part 30c for accommodating the board | substrate support part 22d of the tray 22 are provided. The recess 30c is formed on the outer peripheral surface of the substrate platform 30b.

  3 and 4B show a state where the tray 22 is placed on the dielectric member 30 while being aligned by the guide ring 32 (for example, a state during plasma processing of the substrate W).

  When the tray 22 is placed on the dielectric member 30 while being aligned by the guide ring 32 as shown in FIG. 3, the tray support portion 30a of the dielectric member 30 is as shown in FIG. 4B. The tray 22 is configured to support the lower surface 22b. Further, the substrate mounting portion 30 b of the dielectric member 30 is configured to enter the substrate accommodation hole 22 c of the tray 22 from the lower surface 22 b side and support the lower surface Wa of the substrate W. Further, the recess 30 c of the dielectric member 30 is configured to accommodate the substrate support portion 22 d of the tray 22.

  The height from the tray support portion 30a to the upper end of the substrate placement portion 30b (the end on which the lower surface Wa of the substrate W is placed) is such that the substrate support portion 22d of the tray 22 supported by the tray support portion 30a is the substrate. The height is set so as to be separated from the lower surface Wa of the substrate W placed on the placement unit 30.

  Further, as shown in FIG. 1, the stage 20 includes an ESC electrode (electrostatic attracting electrode) 34 for electrostatically attracting the substrate W placed on the substrate placing portion 30 b of the dielectric member 30. The ESC electrode 34 is built in the vicinity of the upper end of the substrate mounting portion 30 b of the dielectric member 30. An ESC drive power supply unit 36 that applies a DC voltage to the ESC electrode 34 is provided in the dry etching apparatus 10. When the ESC drive power supply unit 36 applies a DC voltage to the ESC electrode 34, an electrostatic adsorption force is generated, and the substrate W is held on the substrate mounting unit 30b of the dielectric member 30 in which the ESC electrode 34 is built. .

  Note that the tray 22 may be electrostatically attracted to the dielectric member 30 by disposing the ESC electrode near the upper end of the tray support portion 30a of the dielectric member 30 on which the tray 22 is placed. Accordingly, heat is easily transferred from the tray 22 in a high temperature state to the dielectric member 30 by the plasma processing, and cooling of the tray 22 is promoted.

  Further, as shown in FIG. 1, the stage 20 is configured to cool the substrate W held on the substrate platform 30 b of the dielectric member 30 during the plasma processing. For this purpose, the stage 20 has a cooling gas supply / recovery path 38 for filling a cooling gas (for example, helium gas as a heat transfer gas) between the substrate W and the substrate mounting portion 30b of the dielectric member 30. The cooling gas supply / recovery path 38 is connected to a cooling gas control unit 40 that controls the amount of cooling gas supplied between the substrate W and the substrate platform 30b.

  Furthermore, the stage 20 has a plurality of push-up rods 42 that push up the tray 22 placed on the tray support portion 30 a of the dielectric member 30 from below and lift the substrate W together with the tray 22. A drive mechanism 44 that moves the plurality of push-up rods 42 up and down is provided.

  When the tray 22 in a state where the substrate W before the plasma processing is accommodated by the tray transport mechanism (not shown) is carried into the chamber 12, the drive mechanism 44 has the tip of the push-up rod 42 of the dielectric member 30. The push-up rod 42 is advanced upward so as to protrude from the upper surface (tray support portion 30a). When the tray transport mechanism places the tray 22 on the tip of the push-up rod 42, the drive mechanism 44 retracts the push-up rod 42 into the dielectric member 30 of the stage 20. As a result, the tray 22 is placed on the tray support portion 30a of the dielectric member 30, and the substrate W is placed on the substrate placement portion 30b.

  When the tray 22 containing the substrate W after being plasma-treated by a tray transport mechanism (not shown) is unloaded from the chamber 12, the drive mechanism 44 advances the push-up rod 42 upward. After the tray 22 is separated from the dielectric member 30 of the stage 20, the tray transport mechanism is raised to a height at which the tray 22 is collected.

  In addition, as shown in FIG. 1, the stage 20 is disposed below the dielectric member 30 and functions as a lower electrode to which a bias voltage is applied, and the dielectric member 30 and the metal block 46. The insulating member 48 covering the outer periphery of the insulating member 48 and a metal shield member 50 covering the outer periphery of the insulating member 48 are provided.

  The metal block 46 of the stage 20 is a lower electrode for performing plasma processing of the substrate W in the chamber 12 in cooperation with the ICP coil 16, and is electrically connected to the second high-frequency power supply unit 52 including a matching circuit. Connected. The second high frequency power supply unit 52 applies a bias voltage to the metal block 46.

  In addition, a coolant channel 46 a through which a coolant for cooling the metal block 46 flows is formed in the metal block 46 in which the dielectric member 30 is disposed above. The cooling unit 54 supplies the temperature-adjusted refrigerant to the refrigerant channel 46 a of the metal block 46. Thereby, the substrate W and the tray 22 placed on the dielectric member 30 of the stage 20 are cooled.

  According to such a dry etching apparatus 10, the substrate W is carried into the chamber 12 while being accommodated in the tray 22 and placed on the stage 20. Specifically, as shown in FIG. 4B, the substrate W is placed on the substrate platform 30b in a state of being separated from the tray 22 placed on the tray support 30a of the dielectric member 30.

  The substrate W placed on the substrate placement unit 30b of the dielectric member 30 is subjected to electrostatic attraction generated by the ESC electrode 34 to which the DC voltage output from the ESC drive power supply unit 36 is applied. Adsorbed and held at 30b. The substrate W is subjected to plasma processing while being sucked and held on the substrate platform 30b.

  The plasma-treated substrate W is lifted together with the tray 22 by the push-up rod 42, transferred to the tray transport mechanism, and unloaded from the chamber 12 by the tray transport mechanism.

  From here, further details of the tray 22 will be described.

  As illustrated in FIG. 4A, the tray 22 includes a main body portion (main body member) 50 and a cover portion (cover member) 52 that covers the main body portion 50.

  The main body portion 50 of the tray 22 has a thin disc shape, and has high rigidity by being made of a material containing carbon (carbon-containing material) such as silicon carbide (SiC). The main body 50 includes a through hole (first through hole) 50a that penetrates in the thickness direction and forms a part (lower part) of the substrate accommodation hole 22c of the tray 22. A plurality of substrate support portions 22d are provided on the inner peripheral surface of the through hole 50a.

The cover portion 52 of the tray 22 has a thin disk shape, and the reason will be described later. Unlike the main body portion 50 made of a carbon-containing material, quartz (silicon dioxide: SiO ₂ ), silicon nitride (SiN), etc. It is made from a material that does not contain carbon.

  Further, the cover portion 52 of the tray 22 includes a through hole (second through hole) 52a that forms a part (upper part) of the substrate accommodation hole 22c and penetrates in the thickness direction. The cover portion 52 of the tray 22 is disposed above the main body portion 50 so that only the substrate support portion 22d of the main body portion 50 is exposed through the through hole 52a of the cover portion 52 when viewed from above.

  Specifically, as shown in FIG. 4B, when the tray 22 is placed on the tray support portion 30 a of the dielectric member 30 of the stage 20, the cover member 52 includes the main body portion 50 of the tray 22 and the chamber 12. So that the portion of the main body 50a that is exposed when viewed from above (when viewed from the top plate 14 side) is as small as possible. The main body 50 is covered. Therefore, the through-hole 52a of the cover part 52 is made the smallest possible size through which the substrate W can pass.

  The reason for configuring the cover portion 52 of the tray 22 in this way will be described. When the main body 50 of the tray 22 made of a carbon-containing material such as silicon carbide (SiC) is directly exposed to plasma in the chamber 12 by plasma processing, the main body 50 is consumed and the main body 50 of the tray 22 is exhausted. The reaction product (carbon-containing product) containing the carbon component is generated. Most of the reaction product of the carbon-containing product adheres to the outer peripheral edge portion of the upper surface Wb of the substrate W located in the vicinity of the tray 22 placed on the dielectric member 30 of the stage 20. When the reaction product containing the carbon component of the main body 50 of the tray 22 adheres to the outer peripheral edge portion of the upper surface Wb of the substrate W, for example, PR (photoresist) is formed on the outer peripheral edge portion of the upper surface Wb of the substrate W during the plasma processing. ) The mask-to-mask selection ratio in the mask or metal mask increases. As a result, shape abnormalities such as the outer peripheral edge portion of the upper surface Wb of the substrate W becoming higher than the central portion are likely to occur. Or, for example, in a plasma processing step of an LED element, a PR mask is provided on the substrate W, which is a sapphire substrate, and a high aspect ratio PSS (Pattern Sapphire Substrate) processing of a cone-shaped pattern (convex triangular triangular shape pattern) is performed. In the case of performing the above, shape abnormalities such as a trapezoidal pattern having a flat tip rather than a cone-shaped pattern having a desired sharp tip are likely to occur at the outer peripheral edge portion of the upper surface Wb of the substrate W.

  As a countermeasure, the cover 52 is disposed above the main body 50 of the tray 22 to suppress the main body 50 from being exposed to plasma, that is, to prevent wear of the main body 50 due to plasma. As a result, the generation amount of the reaction product containing the carbon component of the main body 50 is reduced.

  As a matter of course, the cover portion 52 is exposed to plasma instead of the main body portion 50 made of a carbon-containing material and having high rigidity, and is consumed. However, since the cover portion 52 is made of a material that does not contain carbon such as quartz, a reaction product containing carbon that adheres to the upper surface Wb of the substrate W even if the cover portion 52 is exposed to plasma. Does not occur.

  With the tray 22 having such a configuration, it is possible to obtain the substrate W in which the shape abnormality of the outer peripheral edge portion of the upper surface Wb of the substrate W such as having a flat upper surface Wb by plasma processing is suppressed.

  As shown in FIG. 5, which is an enlarged partial cross-sectional view of the tray 22, the opening edge on the lower side (the main body portion 50 side) of the through hole 52 a of the cover portion 52 is above the through hole 50 a of the main body portion 50 ( It is preferable to be located on the inner side (center side of the substrate accommodation hole 22c) from the opening edge on the cover part 5 side. Thereby, until the opening edge of the lower side of the through hole 52a of the cover part 52 reaches the opening edge of the upper side of the through hole 50a of the main body part 50 by the consumption of the cover part 52 by the plasma (until it spreads), Exposure of the opening edge of the through hole 50 to the plasma is suppressed.

  Furthermore, as shown in FIG. 4B, when the tray 22 is placed on the tray support portion 30a of the dielectric member 30 of the stage 20, and the substrate W is placed on the substrate placement portion 30b, The upper surface Wb of W is preferably located in the through hole 52 a of the cover portion 52 of the tray 22.

  As described above, the through hole 52a of the cover portion 52 of the tray 22 is made as small as possible so that the substrate W can pass therethrough. Therefore, as shown in FIG. 4B, when the upper surface Wb of the substrate W is positioned in the through hole 52a of the cover portion 52, it is formed between the inner peripheral surface of the through hole 52a of the cover portion 52 and the side surface of the substrate W. The gap D is small (the gap D is, for example, 0.1 to 0.2 mm). Therefore, it is difficult for the plasma to reach the main body 50 of the tray 22 made of the carbon-containing material. Further, even if the main body 50 is consumed by the plasma passing through the gap D and a reaction product containing the carbon component of the main body 50 is generated, the reaction product is difficult to pass through the small gap D, and the substrate It is difficult to adhere to the upper surface Wb of W.

According to the present embodiment, the upper part of the main body part 50 containing the carbon component having the substrate support part 22d for supporting the substrate W is made of quartz (SiO ₂ ) or silicon nitride (SiN) containing no carbon. In addition, the plasma processing that suppresses the shape abnormality of the outer peripheral edge portion of the upper surface Wb of the substrate W can be executed by the tray 22 having the configuration in which the cover portion 52 is disposed.

  Further, since the cover portion 50 of the tray 22 includes the through hole 52a having a small gap D with the side surface of the substrate W, for example, 0.1 to 0.2 mm, the outer peripheral edge portion of the upper surface Wb of the substrate W can be more stably provided. Plasma processing that suppresses shape abnormality can be performed.

  Although the present invention has been described with reference to the above-described embodiment, the present invention is not limited to the above-described embodiment.

  For example, the tray according to the present invention can have various forms.

  FIG. 6 is a partially enlarged view of a tray according to another embodiment. The tray 122 shown in FIG. 6 is different from the tray 22 shown in FIG. 5 in that the cover portion 152 of the tray 122 extends downward from the opening edge on the lower side (the main body portion 150 side) of the through hole 152a. It is to cover a part of the inner peripheral surface of the through-hole 150a of the portion 150. In the tray 122 shown in FIG. 6, the shape of the cover 152 is more complicated than the shape of the cover 52 of the tray 22 shown in FIG. 5, but the main body 150 is exposed to plasma compared to the tray 22 shown in FIG. It can be suppressed more. That is, the inner peripheral surface of the through hole 150a of the main body 150 can be prevented from being exposed to plasma.

  FIG. 7 is an enlarged partial cross-sectional view of a tray according to still another embodiment. A tray 222 shown in FIG. 7 is different from the tray 122 shown in FIG. The difference between the tray 222 shown in FIG. 7 and the tray 122 shown in FIG. 6 is that the surface 222e that contacts the outer peripheral edge portion of the lower surface Wa of the substrate W of the substrate support portion 222d provided in the main body 250 is not tapered but flat. Is formed. In this case, the main body 250 of the tray 222 shown in FIG. 7 is easier to manufacture than the main body 150 of the tray 122 shown in FIG.

  FIG. 8 is an enlarged partial cross-sectional view of a tray according to another embodiment. The tray 322 shown in FIG. 8 has an opening edge on the lower side (the main body part 350 side) of the through hole 352a of the cover part 352 and an opening edge on the upper side (the cover part 352 side) of the through hole 350a of the main body part 350 when viewed from above. Is different from the trays 22 to 222 shown in FIGS.

  Thus, various forms of the tray according to the present invention can be considered. The tray according to the present invention is, in a broad sense, a substrate storage tray that is transported and placed together with a substrate in a chamber of a plasma processing apparatus in which plasma processing of the substrate is performed, and penetrates in the thickness direction. A first through hole that accommodates the substrate and a substrate support portion that supports an outer peripheral edge portion of the lower surface of the substrate accommodated in the first through hole, and a main body portion made of a carbon-containing material; It has a second through-hole penetrating in the thickness direction so as to be able to pass through, and is disposed above the main body so as to expose the substrate support portion of the main body through the second through-hole when viewed from above, and contains carbon And a cover portion made of a material that does not.

  Further, as shown in FIGS. 2, 4A, and 4B, the dielectric member 30 of the stage 20 on which the tray 22 and the substrate W are placed has an island shape (convex shape) on the upper surface (tray support portion 30a). The substrate mounting portion 30b is provided. In the present invention, the shape of the dielectric member is not limited to this.

  For example, in the dielectric member 430 shown in FIGS. 9A and 9B, both the tray support portion 430a on which the tray 422 is placed and the substrate placement portion 430b on which the substrate W is placed have the same height as the dielectric member 430. It differs from the dielectric member 30 shown to FIG. 4A and FIG. 4B by the point comprised by this upper surface.

  In the tray 422 corresponding to the dielectric member 430, a plurality of substrate support portions 422 that support the outer peripheral edge portion of the lower surface Wa of the substrate W accommodated in the substrate accommodation hole 422c are attached to the lower surface 422b of the tray 422. ing. Specifically, the plurality of substrate support portions 422 are exposed through the through holes 452a of the cover portion 452 along the edge of the lower opening of the through holes 450a of the main body portion 450 of the tray 422 when viewed from above. The tray 422 is attached to the lower surface 422b.

In order to bring the lower surface 422b of the tray 422 into contact with the upper surface (substrate support portion 430a) of the dielectric member 430, a concave portion 430c capable of accommodating the substrate support portion 422d attached to the lower surface 422b of the tray 422 is a dielectric member. It is formed on the upper surface side of 430.

  Such a dielectric member 430 and a tray 422 are also included in the present invention.

  Further, the tray may be configured so that the cover part can be attached to and detached from the main body part. For example, in the tray 22 (122, 222, 322, 422), the cover part 52 (152, 252, 352, 452) can be attached to and detached from the main body part 50 (150, 250, 350, 450).

  If the tray is configured so that the cover part can be attached to and detached from the main body part, and the cover part is replaced before the parts other than the substrate support part of the main body part are exposed in the upper view due to the exhaustion of the cover part by plasma, The main body can be used for a long time. Since the cost of the tray main body is made of a material having a high hardness (high rigidity) containing a carbon component such as silicon carbide (SiC), the cover part made of a material not containing carbon such as quartz is used. High compared to the cost of Therefore, the running cost of the dry etching apparatus can be reduced by replacing the cover part periodically and using the main body part for a long time. In addition, when a tray is configured by laminating a main body portion made of silicon carbide and a cover portion made of quartz in the thickness direction, the thickness of the tray is reduced to half or less compared to the case where the tray is mainly made of quartz. It is possible.

  Further, the tray main body is composed of a material that does not contain a carbon component, and is prepared from a material containing a carbon component, and a substrate support that supports the outer peripheral edge portion of the lower surface of the substrate is provided on the tray main body. Also good.

  For example, the tray 522 shown in FIG. 10 corresponds to the dielectric member 430 of the stage shown in FIG. 9A, that is, the tray support of the dielectric member 430 where the tray support portion 430a and the substrate mounting portion 430b are the same height. It has a main body portion 552 that can be placed on the portion 430a and is made of a material that does not contain a carbon component, such as quartz or silicon nitride (SiN). A substrate support portion 552d made of a material containing a carbon component, such as silicon carbide (SiC), and housed in the recess 430c of the dielectric member 430 is attached to the lower surface 522b of the main body portion 552 of the tray 522.

  Further, for example, the tray 622 shown in FIG. 11 corresponds to the dielectric member 30 of the stage shown in FIG. 4A, that is, the dielectric member in which the tray support portion 30a is disposed at a lower position than the substrate mounting portion 430b. The main body portion 652 can be placed on the 30 tray support portions 30a and made of a material not containing a carbon component, such as quartz or silicon nitride (SiN). For example, a substrate support portion 622d made of silicon carbide (SiC) and accommodated in the recess 30c of the dielectric member 30 is attached to the lower portion of the main body portion 652 of the tray 622 so as not to protrude downward from the lower surface 622b. Yes.

  Substrate support portions 522d and 622d made of a material containing a carbon component, for example, silicon carbide (SiC), are connected to body portions 552 and 652 made of a material not containing a carbon component, for example, quartz or silicon nitride (SiN). Compared with high hardness and high rigidity, the thickness can be reduced. Thereby, the substrate support portions 522d and 622d supporting the substrate W can be made compact. Further, as described above, the size of the through holes 552a and 652a of the main body portions 552 and 652 of the trays 522 and 622 is configured to be as small as possible so that the substrate W can pass, so that the plasma processing of the substrate W is performed. Intrusion of plasma into the substrate support portions 522d and 622d containing the carbon components of the trays 522 and 622 can be suppressed. Furthermore, the main body portions 552 and 652 of the trays 522 and 622 are made of a material that does not contain a carbon component, whereby generation of a reaction product containing a carbon component can be suppressed. Shape abnormality can be suppressed in the outer peripheral edge portion of Wb. Note that the main body portion of a tray manufactured from a material that does not contain a carbon component, such as the main body portion 552 of the tray 522 and the main body portion 652 of the tray 622, is a main body portion of a tray that is manufactured from a material that contains a carbon component. In comparison, a sufficient thickness is required to ensure high rigidity.

  The present invention can be applied to any plasma processing apparatus that contains a carbon component in a tray that accommodates a substrate and is placed together with the substrate in a chamber in which plasma processing is performed.

10 Dry etching equipment (plasma processing equipment)
12 Chamber 22 Tray 22d Substrate support part 50 Main part 50a First through hole (through hole)
52 Cover portion 52a Second through hole (through hole)
W Substrate Wa Bottom

Claims (8)

A tray for accommodating a substrate that is transported and placed with a substrate in a chamber of a plasma processing apparatus in which plasma processing of the substrate is performed,
A main body made of a carbon-containing material, having a first through-hole penetrating in the thickness direction and accommodating a substrate, and a substrate support portion supporting the outer peripheral edge portion of the lower surface of the substrate accommodated in the first through-hole And
A second through hole penetrating in the thickness direction so that the substrate can pass therethrough, and is disposed above the main body so that the substrate support portion of the main body is exposed through the second through hole when viewed from above; And a cover portion made of a material that does not contain a tray.   2. The tray according to claim 1, wherein an opening edge on a lower side of the second through hole of the cover portion is located inside an opening edge on an upper side of the first through hole of the main body portion when viewed from above.   The tray according to claim 1, wherein the cover portion extends downward from an opening edge on the lower side of the second through hole and covers a part of the inner peripheral surface of the first through hole of the main body portion. A plasma processing apparatus for plasma processing a substrate,
A chamber;
A main body made of a carbon-containing material, having a first through-hole penetrating in the thickness direction and accommodating a substrate, and a substrate support portion supporting the outer peripheral edge portion of the lower surface of the substrate accommodated in the first through-hole And a second through hole penetrating in the thickness direction so that the substrate can pass therethrough, and disposed above the main body portion so that the substrate support portion of the main body portion is exposed through the second through hole when viewed from above A cover portion made of a material not containing carbon, and a tray that can be carried into and out of the chamber;
A dielectric provided in the chamber and provided with a tray support portion for supporting the lower surface of the tray, a substrate placement portion on which the lower surface of the substrate is placed, and a recess for accommodating the substrate support portion of the main body portion of the tray. Members,
An electrode built in the dielectric member and having at least an electrode for electrostatically adsorbing the substrate to the substrate mounting portion;
When transporting the substrate, the outer peripheral edge portion of the lower surface of the substrate housed in the first through hole of the main body is supported by the substrate support portion of the tray,
During plasma processing of the substrate, the lower surface of the tray is supported by the tray support portion of the dielectric member, and the substrate is placed on the substrate placement portion of the dielectric member in a state of being separated from the substrate support portion of the main body portion of the tray, A plasma processing apparatus configured such that a substrate support portion of a main body portion of a tray is accommodated in a concave portion of a dielectric member.   5. The plasma processing apparatus according to claim 4, wherein an opening edge on a lower side of the second through hole of the cover portion of the tray is located inside an opening edge on an upper side of the first through hole of the main body portion when viewed from above. .   The plasma processing apparatus according to claim 4, wherein the cover portion of the tray extends downward from an opening edge on the lower side of the second through hole and covers a part of the inner peripheral surface of the first through hole of the main body portion. . A plasma processing method for plasma processing a substrate in a chamber,
A main body made of a carbon-containing material, having a first through-hole penetrating in the thickness direction and accommodating a substrate, and a substrate support portion supporting the outer peripheral edge portion of the lower surface of the substrate accommodated in the first through-hole And a second through hole penetrating in the thickness direction so that the substrate can pass therethrough, and disposed above the main body portion so that the substrate support portion of the main body portion is exposed through the second through hole when viewed from above And a cover portion made of a material not containing carbon, and a tray that can be carried into and out of the chamber is prepared,
The substrate is accommodated in the first through hole of the main body portion of the tray and supported by the substrate support portion,
A chamber provided with a dielectric member comprising a tray support portion for supporting the lower surface of the tray, a substrate placement portion on which the lower surface of the substrate is placed, and a recess for accommodating the substrate support portion of the main body portion of the tray Into the tray that contains the substrate,
During plasma processing of the substrate, the lower surface of the tray is supported by the tray support portion of the dielectric member, and the substrate is placed on the substrate placement portion of the dielectric member in a state of being separated from the substrate support portion of the main body portion of the tray, Plasma processing in which the substrate support part of the main body of the tray is housed in the concave part of the dielectric member, and the substrate is electrostatically adsorbed to the substrate mounting part of the dielectric member by applying a voltage to the electrode built in the dielectric member Method. A tray made of a carbon-containing material, having a first through hole that penetrates in the thickness direction and accommodates the substrate, and a substrate support that supports the outer peripheral edge portion of the lower surface of the substrate accommodated in the first through hole A cover member for covering
Made from carbon-free material,
A second through-hole penetrating in the thickness direction so that the substrate can pass through,
A cover member configured to be detachable from the tray so that the substrate support portion of the tray is exposed through the second through hole when viewed from above.

Images