JP2013253183A - Prior supply type liquid semiconductor-encapsulating resin composition - Google Patents

Prior supply type liquid semiconductor-encapsulating resin composition Download PDF

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JP2013253183A
JP2013253183A JP2012130366A JP2012130366A JP2013253183A JP 2013253183 A JP2013253183 A JP 2013253183A JP 2012130366 A JP2012130366 A JP 2012130366A JP 2012130366 A JP2012130366 A JP 2012130366A JP 2013253183 A JP2013253183 A JP 2013253183A
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resin composition
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liquid
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semiconductor chip
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Atsushi Saito
篤志 齋藤
Yosuke Sakai
洋介 酒井
Toyokazu Hacchi
豊和 発地
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Namics Corp
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Namics Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a prior supply type encapsulating resin composition which is in a liquid state to achieve workability, easy handling and narrowing of a pitch, satisfactorily fills a space between a semiconductor chip and a substrate, is curable in a short time, and is capable of controlling a void between the semiconductor chip and the substrate.SOLUTION: A prior supply type liquid semiconductor-encapsulating resin composition contains: (A) at least one liquid epoxy resin selected from the group consisting of epoxy resins of liquid bisphenol A type, liquid bisphenol F type and liquid naphthalene type; (B) a curing agent; (C) a pre-gelling agent; and (D) a curing accelerator. The curing accelerator equivalent of the component (B) is 0.6-1.1 time of the epoxy equivalent of the component (A), and the component (C) is 6-11 pts mass based on 100 pts.mass of the total of the components (A), (B), (C) and (D).

Description

本発明は、先供給型液状半導体封止樹脂組成物に関し、特に、ボイド低減性に優れた非導電性のアンダーフィル剤に関する。   The present invention relates to a pre-feed type liquid semiconductor encapsulating resin composition, and more particularly to a non-conductive underfill agent excellent in void reduction.

近年、電子機器のさらなる配線等の高密度化、高周波化に対応可能な半導体チップの実装方式として、フリップチップボンディングが利用されている。一般的に、フリップチップボンディングでは、半導体チップと基板の間隙を、アンダーフィルと呼ばれる材料で封止する。   In recent years, flip chip bonding has been used as a semiconductor chip mounting method that can cope with higher wiring density and higher frequency of electronic devices. Generally, in flip chip bonding, a gap between a semiconductor chip and a substrate is sealed with a material called underfill.

通常、フリップチップボンディングでは、半導体チップと基板をはんだ付け等で接合した後、半導体チップと基板の間隙に、熱硬化性の半導体樹脂封止組成物であるアンダーフィル剤を充填する(以下、「後供給型」という)。しかしながら、近年では、まず、アンダーフィル剤を基板に塗布し、半導体チップを載せた後、アンダーフィル剤の硬化と、半導体チップと基板の接続とを同時に行うことにより、工程の短縮および硬化時間の短縮を可能とし、その結果、低コストかつ低エネルギーで作製できる、先供給型フリップチップボンディングプロセスが注目され、このプロセス向けの封止材樹脂組成物(以下、「先供給型封止樹脂組成物」という)への要求が高まっている。なお、後供給型の場合には、封止材樹脂組成物を注入するとき、注入時間を短縮するために、通常、基板等の温度を80℃程度に上げるため、この注入温度では硬化しないことが求められ、半導体樹脂封止組成物の硬化時間の短縮とはトレードオフが生じている。   Usually, in flip chip bonding, after bonding a semiconductor chip and a substrate by soldering or the like, a gap between the semiconductor chip and the substrate is filled with an underfill agent, which is a thermosetting semiconductor resin sealing composition (hereinafter, “ Called post-feed type). However, in recent years, first, after applying an underfill agent to a substrate and placing a semiconductor chip, curing the underfill agent and connecting the semiconductor chip and the substrate at the same time shortens the process and reduces the curing time. A pre-supplied flip chip bonding process that can be shortened and, as a result, can be manufactured at low cost and low energy has attracted attention. An encapsulant resin composition for this process (hereinafter referred to as “pre-supplied encapsulating resin composition”). ") Is growing. In the case of the post-feed type, in order to shorten the injection time when injecting the encapsulant resin composition, the temperature of the substrate or the like is usually raised to about 80 ° C., so that it does not cure at this injection temperature. Therefore, there is a trade-off between shortening the curing time of the semiconductor resin sealing composition.

先供給型封止樹脂組成物には、作業性、ハンドリングの容易性、狭ピッチ化への対応から液状であること、すなわち室温での粘性が低いこと、短時間(一例としては5秒以内)での硬化が可能であること、短時間で半導体チップ−基板間のボイドを無くすことが要求される。   The pre-supplied encapsulating resin composition is liquid from the viewpoint of workability, ease of handling, and response to narrow pitch, that is, it has a low viscosity at room temperature, and is a short time (for example, within 5 seconds) Therefore, it is required to eliminate the void between the semiconductor chip and the substrate in a short time.

低弾性、強靱性等を目的として、エポキシ樹脂、所定のフェノキシ樹脂、エポキシ樹脂の硬化剤、フェノキシ樹脂の硬化剤を含有してなるエポキシ樹脂組成物の液状封止材が開示されている(特許文献1)。   For the purpose of low elasticity, toughness, etc., an epoxy resin, a predetermined phenoxy resin, an epoxy resin curing agent, and an epoxy resin composition liquid sealing material containing a phenoxy resin curing agent are disclosed (patents). Reference 1).

しかしながら、上記のエポキシ樹脂組成物を、先供給型プロセスで使用すると、以下の問題点があることがわかった。第1に、半導体チップ−基板間にボイドが発生してしまう。この原因としては、フェノキシ樹脂をエポキシ樹脂の2倍以上の質量で含むため、有機溶剤が必要となること、ブロックイソシアネートを用いるため、アウトガスが出ること等が考えられる。第2に、硬化速度が遅く、生産性を向上させることができない。第3に、粘度が高いので(第0034段落参照)、狭ピッチ化に対応することができない、等である。   However, it has been found that when the above epoxy resin composition is used in a pre-feed type process, there are the following problems. First, voids are generated between the semiconductor chip and the substrate. This may be due to the fact that the phenoxy resin is contained in a mass twice or more that of the epoxy resin, so that an organic solvent is required, and outgassing occurs due to the use of blocked isocyanate. Secondly, the curing rate is slow and productivity cannot be improved. Third, since the viscosity is high (see paragraph 0034), it is not possible to cope with narrow pitch.

特開平10−120761号公報JP-A-10-120761

本発明は、上記問題点を解決することを課題とする。すなわち、本発明は、作業性、ハンドリングの容易性、狭ピッチ化対応のため、液状であり、半導体チップ−基板間への充填性がよく、短時間での硬化が可能で、短時間で半導体チップ−基板間のボイドを抑制することができる先供給型封止材樹脂組成物を提供することを目的とする。   An object of the present invention is to solve the above problems. That is, the present invention is liquid for workability, ease of handling, and narrow pitch correspondence, has a good filling property between the semiconductor chip and the substrate, can be cured in a short time, and can be cured in a short time. An object of the present invention is to provide a pre-supplied encapsulant resin composition capable of suppressing voids between a chip and a substrate.

本発明は、以下の構成を有することによって上記問題を解決した先供給型封止材樹脂組成物に関する。
〔1〕(A)液状ビスフェノールA型エポキシ樹脂、液状ビスフェノールF型エポキシ樹脂および液状ナフタレン型エポキシ樹脂からなる群より選択される少なくとも1種の液状エポキシ樹脂、
(B)硬化剤、
(C)プレゲル剤、ならびに
(D)硬化促進剤
を含有し、
(B)成分の硬化剤当量が、(A)成分のエポキシ当量の0.6〜1.1倍であり、かつ(C)成分が、(A)成分と(B)成分と(C)成分と(D)成分との合計:100質量部に対して、6〜11質量部であることを特徴とする、先供給型液状半導体封止樹脂組成物。
〔2〕(C)成分が、メタクリル酸メチル・メタクリル酸ブチル共重合体である、上記〔1〕記載の先供給型液状半導体封止樹脂組成物。
〔3〕さらに、(E)充填剤を含有する、上記〔1〕または〔2〕記載の先供給型液状半導体封止樹脂組成物。
〔4〕上記〔1〕〜〔3〕のいずれか記載の先供給型液状半導体封止樹脂組成物を用いて封止されたフリップチップ型半導体素子を有する、半導体装置。
The present invention relates to a pre-feed type encapsulant resin composition that has solved the above problems by having the following configuration.
[1] (A) at least one liquid epoxy resin selected from the group consisting of a liquid bisphenol A type epoxy resin, a liquid bisphenol F type epoxy resin, and a liquid naphthalene type epoxy resin,
(B) a curing agent,
(C) contains a pregel agent, and (D) a curing accelerator,
The curing agent equivalent of the component (B) is 0.6 to 1.1 times the epoxy equivalent of the component (A), and the component (C) is the components (A), (B), and (C). And (D) component: 6 to 11 parts by mass with respect to 100 parts by mass, a pre-supplied liquid semiconductor encapsulating resin composition.
[2] The pre-feed type liquid semiconductor encapsulating resin composition according to [1], wherein the component (C) is a methyl methacrylate / butyl methacrylate copolymer.
[3] The pre-supplied liquid semiconductor encapsulating resin composition according to [1] or [2], further comprising (E) a filler.
[4] A semiconductor device having a flip-chip type semiconductor element encapsulated with the pre-supplied liquid semiconductor encapsulating resin composition according to any one of [1] to [3].

本発明〔1〕によれば、作業性、ハンドリングの容易性、狭ピッチ化対応に優れ、短時間での硬化が可能で、半導体チップ−基板間への充填性がよく、短時間で半導体チップ−基板間のボイドを抑制することができる先供給型液状半導体封止材樹脂組成物が得られる。   According to the present invention [1], it is excellent in workability, handling ease, and narrow pitch reduction, can be cured in a short time, has a good filling property between a semiconductor chip and a substrate, and can be manufactured in a short time. -The pre-feed type liquid semiconductor sealing material resin composition which can suppress the void between board | substrates is obtained.

本発明〔4〕によれば、低コストで、低エネルギーの先供給型フリップチップボンディングプロセスで製造できる半導体装置を提供することができる。   According to the present invention [4], it is possible to provide a semiconductor device that can be manufactured at a low cost by a low-energy first-feed flip-chip bonding process.

本発明の先供給型液状半導体封止樹脂組成物(以下、封止樹脂組成物という)は、(A)液状ビスフェノールA型エポキシ樹脂、液状ビスフェノールF型エポキシ樹脂および液状ナフタレン型エポキシ樹脂からなる群より選択される少なくとも1種の液状エポキシ樹脂、
(B)硬化剤、
(C)プレゲル剤、ならびに
(D)硬化促進剤
を含有し、
(B)成分の硬化剤当量が、(A)成分のエポキシ当量の0.6〜1.1倍であり、かつ(C)成分が、(A)成分と(B)成分と(C)成分と(D)成分との合計:100質量部に対して、6〜11質量部であることを特徴とする。
The pre-supplied liquid semiconductor encapsulating resin composition (hereinafter referred to as encapsulating resin composition) of the present invention is a group consisting of (A) liquid bisphenol A type epoxy resin, liquid bisphenol F type epoxy resin and liquid naphthalene type epoxy resin. At least one liquid epoxy resin selected from
(B) a curing agent,
(C) contains a pregel agent, and (D) a curing accelerator,
The curing agent equivalent of the component (B) is 0.6 to 1.1 times the epoxy equivalent of the component (A), and the component (C) is the components (A), (B), and (C). And (D) component: 6 to 11 parts by mass with respect to 100 parts by mass.

(A)成分である液状ビスフェノールA型エポキシ樹脂、液状ビスフェノールF型エポキシ樹脂および液状ナフタレン型エポキシ樹脂からなる群より選択される少なくとも1種の液状エポキシ樹脂は、室温で液状のものをいい、封止樹脂組成物に、硬化性、耐熱性、接着性を付与し、硬化後の封止樹脂組成物に、耐久性を付与する。なお、封止樹脂組成物としたときに、室温で流動性を保てることができれば、液状エポキシ樹脂と固形エポキシ樹脂を併用してもよい。また、(A)成分のエポキシ当量は、粘度調整の観点から、80〜250g/eqが好ましい。市販品としては、新日鐵化学製ビスフェノールA型エポキシ樹脂(品名:YD−128、YD−825GS)、新日鐵化学製ビスフェノールF型エポキシ樹脂(品名:YDF870GS)、DIC製ナフタレン型エポキシ樹脂(品名:HP4032D)等が挙げられる。   The component (A) is at least one liquid epoxy resin selected from the group consisting of liquid bisphenol A type epoxy resin, liquid bisphenol F type epoxy resin and liquid naphthalene type epoxy resin. Curability, heat resistance, and adhesiveness are imparted to the stopping resin composition, and durability is imparted to the cured sealing resin composition. In addition, when it is set as sealing resin composition, if a fluidity | liquidity can be maintained at room temperature, you may use together a liquid epoxy resin and a solid epoxy resin. The epoxy equivalent of the component (A) is preferably 80 to 250 g / eq from the viewpoint of adjusting the viscosity. Commercially available products include Nippon Steel Chemical's bisphenol A type epoxy resin (product names: YD-128, YD-825GS), Nippon Steel Chemical's bisphenol F type epoxy resin (product name: YDF870GS), DIC naphthalene type epoxy resin ( Product name: HP4032D) and the like.

(B)成分は、(A)成分の硬化能を有するものであればよく、封止樹脂組成物としたときに、室温で流動性を保てることができれば、固形状でも使用可能である。(B)成分としては、酸無水物、フェノール系硬化剤、カルボン酸ジヒドラジド硬化剤、アミン系硬化剤が挙げられ、封止樹脂組成物の流動性、半導体チップと基板の接続性の観点から、酸無水物が好ましい。酸無水物としては、テトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、メチルナジック酸無水物、水素化メチルナジック酸無水物、トリアルキルテトラヒドロ無水フタル酸、メチルシクロヘキセンテトラカルボン酸二無水物、無水フタル酸、無水トリメリット酸、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸二無水物、エチレングリコールビスアンヒドロトリメリテート、グリセリンビス(アンヒドロトリメリテート)モノアセテート、ドデセニル無水コハク酸、脂肪族二塩基酸ポリ無水物、クロレンド酸無水物、メチルブテニルテトラヒドロフタル酸無水物、アルキル化テトラヒドロフタル酸無水物、メチルハイミック酸無水物、アルケニル基で置換されたコハク酸無水物、グルタル酸無水物等が挙げられ、メチルブテニルテトラヒドロフタル酸無水物が好ましい。フェノール系硬化剤としては、フェノールノボラック、クレゾールノボラック等が挙げられ、フェノールノボラックが好ましい。カルボン酸ジヒドラジド硬化剤としては、アジピン酸ジヒドラジド、イソフタル酸ジヒドラジド、セバチン酸ジヒドラジド、ドデカン酸ジヒドラジド等が挙げられ、アジピン酸ジヒドラジドが好ましい。アミン系硬化剤としては、鎖状脂肪族アミン、環状脂肪族アミン、脂肪芳香族アミン、芳香族アミン等が挙げられ、芳香族アミンが好ましい。市販品としては、三菱化学製酸無水物(グレード:YH306、YH307)、日立化成工業製3 or 4−メチル−ヘキサヒドロ無水フタル酸(品名:HN−5500)、日本ファインケム製アジピン酸ジヒドラジド(品名:ADH)、明和化成製フェノール硬化剤(品名:MEH8000、MEH8005)、日本化薬製アミン硬化剤(品名:カヤハードA−A)等が挙げられる。(B)成分は、単独でも2種以上を併用してもよい。   The component (B) only needs to have the curability of the component (A), and can be used in solid form as long as it can maintain fluidity at room temperature when used as a sealing resin composition. Examples of the component (B) include acid anhydrides, phenolic curing agents, carboxylic acid dihydrazide curing agents, and amine curing agents. From the viewpoint of the fluidity of the sealing resin composition and the connectivity between the semiconductor chip and the substrate, Acid anhydrides are preferred. Acid anhydrides include tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic acid anhydride, hydrogenated methylnadic acid anhydride, trialkyltetrahydrophthalic anhydride, Methylcyclohexene tetracarboxylic dianhydride, phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic dianhydride, ethylene glycol bisanhydro trimellitate, glycerin bis (anhydro trimellitate) mono Substituted with acetate, dodecenyl succinic anhydride, aliphatic dibasic polyanhydride, chlorendic anhydride, methylbutenyl tetrahydrophthalic anhydride, alkylated tetrahydrophthalic anhydride, methyl hymic anhydride, alkenyl group Succinic anhydride was, glutaric anhydride and the like, methyl butenyl tetrahydrophthalic acid anhydride are preferred. Examples of the phenolic curing agent include phenol novolak and cresol novolak, and phenol novolak is preferable. Examples of the carboxylic acid dihydrazide curing agent include adipic acid dihydrazide, isophthalic acid dihydrazide, sebacic acid dihydrazide, dodecanoic acid dihydrazide, and adipic acid dihydrazide is preferable. Examples of amine-based curing agents include chain aliphatic amines, cycloaliphatic amines, aliphatic aromatic amines, aromatic amines, and the like, and aromatic amines are preferred. Commercially available products include acid anhydrides (grade: YH306, YH307) manufactured by Mitsubishi Chemical, 3 or 4-methyl-hexahydrophthalic anhydride (product name: HN-5500) manufactured by Hitachi Chemical, and adipic acid dihydrazide manufactured by Nippon Finechem (product name: ADH), Meiwa Kasei's phenolic curing agents (product names: MEH8000, MEH8005), Nippon Kayaku's amine curing agent (product name: Kayahard AA), and the like. (B) A component may be individual or may use 2 or more types together.

(C)成分は、封止樹脂組成物のボイドを抑制する。また、基板に半導体チップを搭載するステージ上に、封止樹脂組成物を長時間放置した後であっても、半導体チップと基板の接続を阻害しないものが好ましい。特に、封止樹脂組成物を60℃以上で長時間放置した後であっても、半導体チップと基板の接続を阻害しないものが、より好ましい。ここで、プレゲル剤とは、室温では固体で、加熱時に(A)成分であるエポキシ樹脂マトリックス中に膨潤または溶解することにより、封止樹脂組成物の粘度を増加させる作用がある有機物をいう。(C)成分としては、メタクリル酸メチル・メタクリル酸ブチル共重合体、メタクリル酸メチル・メタクリル酸イソブチル・メタクリル酸ブチル共重合体、メタクリル酸メチル重合体、エポキシ基含有メタクリル酸メチル重合体、コアシェル型メタクリル酸メチル・メタクリル酸ブチル共重合体が挙げられ、ボイド抑制の観点から、メタクリル酸メチル・メタクリル酸ブチル共重合体が好ましい。市販品としては、ガンツ化成製メタクリル酸メチル・メタクリル酸ブチル共重合体微粒子(品名:F303)、三菱レーヨン製メタクリル酸メチル・メタクリル酸イソブチル・メタクリル酸ブチル共重合体(品名:JF−001)、三菱レーヨン製メタクリル酸メチル重合体(品名:JF−003)等が挙げられる。(C)成分は、単独でも2種以上を併用してもよい。   (C) A component suppresses the void of a sealing resin composition. Further, it is preferable that the sealing resin composition is not left on the stage on which the semiconductor chip is mounted on the substrate for a long time and does not hinder the connection between the semiconductor chip and the substrate. In particular, it is more preferable that the sealing resin composition does not hinder the connection between the semiconductor chip and the substrate even after leaving the sealing resin composition at 60 ° C. or more for a long time. Here, the pregel agent is an organic substance that is solid at room temperature and has an action of increasing the viscosity of the sealing resin composition by swelling or dissolving in the epoxy resin matrix as the component (A) when heated. As component (C), methyl methacrylate / butyl methacrylate copolymer, methyl methacrylate / isobutyl methacrylate / butyl methacrylate copolymer, methyl methacrylate polymer, epoxy group-containing methyl methacrylate polymer, core-shell type Examples thereof include methyl methacrylate / butyl methacrylate copolymer, and methyl methacrylate / butyl methacrylate copolymer is preferable from the viewpoint of suppressing voids. Commercially available products include Gantsu Kasei methyl methacrylate / butyl methacrylate copolymer fine particles (product name: F303), Mitsubishi Rayon methyl methacrylate / isobutyl methacrylate / butyl methacrylate copolymer (product name: JF-001), Examples include methyl methacrylate polymer (product name: JF-003) manufactured by Mitsubishi Rayon. (C) A component may be individual or may use 2 or more types together.

(D)成分により、保存安定性と、適度の硬化性が付与され、(D)成分としては、マイクロカプセル化されたイミダゾール化合物硬化剤、アミンアダクト型硬化促進剤が、保存安定性の観点から好ましく、液状ビスフェノールA型等の液状エポキシ樹脂中に分散された、マイクロカプセル化イミダゾール化合物硬化剤が、作業性、硬化速度、保存安定性の点からより好ましい。イミダゾール硬化剤としては、2−メチルイミダゾール、2−ウンデシルイミダゾール、2−ヘプタデシルイミダゾール、2−エチル−4−メチルイミダゾール、2−フェニルイミダゾール、2−フェニル−4−メチルイミダゾール、2,4−ジアミノ−6−〔2’−メチルイミダゾリル−(1’)]エチル−s−トリアジン、2−フェニル−4,5−ジヒドロキシメチルイミダゾール、2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾール、2,3−ジヒドロ−1H−ピロロ[1,2−a]ベンズイミダゾール等を挙げることができ、2,4−ジアミノ−6−〔2’−メチルイミダゾリル−(1’)]エチル−s−トリアジン、2,4−ジアミノ−6−[2’−ウンデシルイミダゾリル−(1)−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−エチル−4’−メチルイミダゾリル−(1’)]−エチル−s−トリアジン等が、硬化速度、作業性、耐湿性の観点から好ましい。(D)成分の市販品としては、旭化成イーマテリアルズ製マイクロカプセル化イミダゾール化合物硬化促進剤(品名:HX3722、HX3932HP)、味の素ファインテクノ製アミンアダクト型硬化促進剤(品名:PN−40J)等が挙げられる。ここで、封止樹脂組成物の成分を配合した後、メッシュサイズ1μmのフィルタを用いて配合物をろ過する場合には、(D)成分の粒径が1μm未満のものを用いると好ましい。(D)成分は、単独でも2種以上を併用してもよい。   Storage stability and moderate curability are imparted by component (D). As component (D), a microencapsulated imidazole compound curing agent and an amine adduct type curing accelerator are used from the viewpoint of storage stability. Preferably, a microencapsulated imidazole compound curing agent dispersed in a liquid epoxy resin such as liquid bisphenol A type is more preferable from the viewpoint of workability, curing speed, and storage stability. Examples of imidazole curing agents include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2,4- Diamino-6- [2'-methylimidazolyl- (1 ')] ethyl-s-triazine, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2, 3-dihydro-1H-pyrrolo [1,2-a] benzimidazole can be mentioned, and 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)] ethyl-s-triazine, 2 , 4-Diamino-6- [2'-undecylimidazolyl- (1) -ethyl-s-triazine, 2, - diamino-6- [2'-ethyl-4'-methylimidazolyl- - (1 ')] - ethyl -s- triazine, and curing rate, workability, preferable from the viewpoint of moisture resistance. (D) Component commercial products include microencapsulated imidazole compound curing accelerators (product names: HX3722 and HX3932HP) manufactured by Asahi Kasei E-materials, amine adduct-type curing accelerators (product name: PN-40J) manufactured by Ajinomoto Fine Techno, and the like. Can be mentioned. Here, after compounding the components of the sealing resin composition, when the compound is filtered using a filter having a mesh size of 1 μm, it is preferable to use a component (D) having a particle size of less than 1 μm. (D) A component may be individual or may use 2 or more types together.

(B)成分の硬化剤当量は、(A)成分のエポキシ当量の0.6〜1.1倍であり、0.6倍未満では、(A)成分の硬化が不十分になる、またはボイド発生やリフローテスト後の封止樹脂組成物のデラミネーションの発生が起きてしまう。一方、(B)成分の硬化剤当量が1.1倍を超えても、ボイド発生、リフローテスト後の封止樹脂組成物のデラミネーションの発生が起きてしまう。ここで、(B)成分の硬化剤当量は、例えば、(B)成分が酸無水物のときには酸無水当量、フェノール系硬化剤のときにはフェノール当量、カルボン酸ジヒドラジド硬化剤の場合にはヒドラジド当量である。   The curing agent equivalent of the component (B) is 0.6 to 1.1 times the epoxy equivalent of the component (A), and if it is less than 0.6 times, the curing of the component (A) becomes insufficient or a void. Generation | occurrence | production and generation | occurrence | production of the delamination of the sealing resin composition after a reflow test will occur. On the other hand, even if the curing agent equivalent of the component (B) exceeds 1.1 times, void generation and delamination of the encapsulating resin composition after the reflow test occur. Here, the curing agent equivalent of the component (B) is, for example, an acid anhydride equivalent when the component (B) is an acid anhydride, a phenol equivalent when the component is a phenolic curing agent, and a hydrazide equivalent when the component is a carboxylic acid dihydrazide curing agent. is there.

(C)成分は、(A)成分と(B)成分と(C)成分と(D)成分との合計:100質量部に対して、6〜11質量部であり、6質量部未満では、ボイド抑制効果が十分ではなく、11質量部を超えると、半導体チップと基板の接続不良が発生し、また、ボイド抑制効果も十分ではなくなる。   Component (C) is a total of (A) component, (B) component, (C) component, and (D) component: 6 to 11 parts by mass with respect to 100 parts by mass, and less than 6 parts by mass, If the void suppression effect is not sufficient and exceeds 11 parts by mass, poor connection between the semiconductor chip and the substrate occurs, and the void suppression effect is not sufficient.

封止樹脂組成物は、(A)成分と(B)成分と(C)成分と(D)成分との合計:100質量部に対して、(D)成分を3〜6質量部含有すると好ましく、4〜5質量部含有すると、より好ましい。3質量部未満になると、反応性の低下となることによりボンディング性が悪くなり易く、6質量部を超えると、イオン性不純物の増加となり、信頼性が悪くなり易くなってしまう。   The encapsulating resin composition preferably contains 3 to 6 parts by mass of component (D) with respect to 100 parts by mass of component (A), component (B), component (C) and component (D). It is more preferable to contain 4 to 5 parts by mass. When the amount is less than 3 parts by mass, the bonding property is likely to deteriorate due to a decrease in reactivity, and when the amount exceeds 6 parts by mass, the ionic impurities increase and the reliability is likely to deteriorate.

封止樹脂組成物は、さらに、(E)充填剤を含有すると、硬化後の封止樹脂組成物の弾性率、熱膨張係数調整の観点から、好ましい。(E)成分としては、コロイダルシリカ、疎水性シリカ、微細シリカ、ナノシリカ等のシリカ、アクリルビーズ、ガラスビーズ、ウレタンビーズ、ベントナイト、アセチレンブラック、ケッチェンブラック等が挙げられる。また、(E)成分としてのフィラーの平均粒径(粒状でない場合は、その平均最大径)は、特に限定されないが、0.05〜50μmであることが、半導体樹脂封止剤中にフィラーを均一に分散させるうえで好ましく、また、半導体封止剤をアンダーフィルとして使用した際の注入性に優れる等の理由から好ましい。0.05μm未満だと、半導体樹脂封止剤の粘度が上昇して、アンダーフィルとして使用した際に流動性が悪化するおそれがある。50μm超だと、半導体樹脂封止剤中半導体チップと基板の隙間にフィラーを均一に存在させることが困難になるおそれがある。(E)成分としてのフィラーの平均粒径は、0.1〜30μmであることがより好ましく、0.1〜5μmであることがさらに好ましい。市販品としては、アドマテックス製シリカ(製品名:SO−E2、平均粒径:0.5μm)、日本アエロジル製疎水性フュームドシリカ(製品名:R805、平均粒径:20nm)、扶桑化学工業製(製品名:SP03B、平均粒径:300nm)等が挙げられる。ここで、(E)成分の平均粒径は、動的光散乱式ナノトラック粒度分析計により測定する。(E)成分は、単独でも2種以上を併用してもよい。   It is preferable that the sealing resin composition further contains (E) a filler from the viewpoint of adjusting the elastic modulus and thermal expansion coefficient of the cured sealing resin composition. Examples of the component (E) include silica such as colloidal silica, hydrophobic silica, fine silica, and nano silica, acrylic beads, glass beads, urethane beads, bentonite, acetylene black, and ketjen black. Moreover, the average particle diameter of the filler as the component (E) (or the average maximum diameter when not granular) is not particularly limited, but it is 0.05 to 50 μm, and the filler is contained in the semiconductor resin sealant. It is preferable for uniform dispersion, and is preferable for reasons such as excellent injectability when a semiconductor sealing agent is used as an underfill. If it is less than 0.05 μm, the viscosity of the semiconductor resin encapsulant increases, and the fluidity may deteriorate when used as an underfill. If it exceeds 50 μm, it may be difficult to make the filler uniformly exist in the gap between the semiconductor chip and the substrate in the semiconductor resin sealant. (E) As for the average particle diameter of the filler as a component, it is more preferable that it is 0.1-30 micrometers, and it is further more preferable that it is 0.1-5 micrometers. Commercially available products include Admatex silica (product name: SO-E2, average particle size: 0.5 μm), Nippon Aerosil hydrophobic fumed silica (product name: R805, average particle size: 20 nm), Fuso Chemical Industries (Product name: SP03B, average particle size: 300 nm) and the like. Here, the average particle diameter of the component (E) is measured by a dynamic light scattering nanotrack particle size analyzer. (E) A component may be individual or may use 2 or more types together.

(E)成分は、線膨張係数の観点から、封止樹脂組成物:100質量部に対して、好ましくは0.1〜90質量部、より好ましくは10〜65質量部含有される。1〜30質量部であると、線膨張係数を下げられ、かつ半導体チップ−基板間への充填性の悪化をさけることができる。   (E) From a viewpoint of a linear expansion coefficient, Preferably it is 0.1-90 mass parts with respect to 100 mass parts sealing resin composition: More preferably, 10-65 mass parts is contained. When the content is 1 to 30 parts by mass, the linear expansion coefficient can be lowered, and deterioration of the filling property between the semiconductor chip and the substrate can be avoided.

封止樹脂組成物には、本発明の目的を損なわない範囲で、更に必要に応じ、密着性付与調整のためのシランカップリング剤等のカップリング剤;塗布適性、流動適性調整のためのレオロジー調整剤;着色のための着色剤;充填剤、着色剤の分散性向上、沈降防止のための分散剤、沈降防止剤;はんだ接続が必要である場合に使用し得るフラックス剤;消泡性調整のための消泡剤;封止樹脂組成物の表面状態調製、濡れ性調整のための表面調整剤;弾性率、応力調整のためのエラストマー類;粘度、靭性等の調整のため組成物として液状を保てる範囲内で使用可能な固形樹脂等を、含有させることができる。   In the encapsulating resin composition, a coupling agent such as a silane coupling agent for adjusting adhesion, if necessary, rheology for adjusting coating suitability and flow suitability, as long as the object of the present invention is not impaired. Adjusting agent; coloring agent for coloring; filler, improving dispersibility of coloring agent, dispersing agent for preventing settling, anti-settling agent; flux agent that can be used when solder connection is required; Defoaming agent for surface preparation; surface condition adjustment for sealing resin composition, surface adjustment agent for wettability adjustment; elastomers for elastic modulus and stress adjustment; liquid as composition for adjustment of viscosity, toughness, etc. A solid resin that can be used within a range that can be maintained can be contained.

封止樹脂組成物は、例えば、(A)成分〜(D)成分、およびその他の添加剤等を同時にまたは別々に、必要により加熱処理を加えながら、撹拌、溶融、混合、分散させることにより得ることができる。これらの混合、撹拌、分散等の装置としては、特に限定されるものではないが、撹拌、加熱装置を備えたライカイ機、3本ロールミル、ボールミル、プラネタリーミキサー、ビーズミル等を使用することができる。また、これら装置を適宜組み合わせて使用してもよい。   The encapsulating resin composition is obtained, for example, by stirring, melting, mixing, and dispersing the components (A) to (D) and other additives simultaneously or separately, with heat treatment as necessary. be able to. The mixing, stirring, dispersing and the like devices are not particularly limited, and a raikai machine equipped with a stirring and heating device, a three-roll mill, a ball mill, a planetary mixer, a bead mill and the like can be used. . Moreover, you may use combining these apparatuses suitably.

封止樹脂組成物は、温度:25℃での粘度が0.5〜200Pa・s以下であると、塗布性の観点から好ましく、1.0〜100Pa・s以下であると、より好ましい。ここで、粘度は、東機産業製粘度計(型番:E型)で測定する。また、封止樹脂組成物は、室温で24時間放置した後の増粘倍率が、1〜2倍であると、保存後の塗布適性の観点から好ましい。   The sealing resin composition preferably has a viscosity at 25 ° C. of 0.5 to 200 Pa · s from the viewpoint of applicability, and more preferably 1.0 to 100 Pa · s. Here, the viscosity is measured with a viscometer manufactured by Toki Sangyo (model number: E type). Moreover, it is preferable from a viewpoint of the applicability after storage that the sealing resin composition is 1 to 2 times the thickening ratio after being left at room temperature for 24 hours.

封止樹脂組成物は、ディスペンサー、印刷等で基板の所望の位置に形成することができる。   The sealing resin composition can be formed at a desired position on the substrate by a dispenser, printing or the like.

封止樹脂組成物の硬化は、180〜260℃で、1〜10秒間行うことが好ましく、特に5秒以内で硬化させると生産性向上の観点から好ましい。   Curing of the sealing resin composition is preferably performed at 180 to 260 ° C. for 1 to 10 seconds. In particular, curing within 5 seconds is preferable from the viewpoint of improving productivity.

このように、本発明の先供給型液状半導体封止樹脂組成物は、作業性、ハンドリングの容易性、狭ピッチ化対応に優れ、短時間での硬化が可能で、短時間で半導体チップ−基板間のボイドを抑制することができる。このため、低コストで、低エネルギーの先供給型で、フリップチップ型半導体素子を有する半導体装置を得ることができる。   Thus, the pre-supplied liquid semiconductor encapsulating resin composition of the present invention is excellent in workability, ease of handling, and adaptability to narrow pitch, and can be cured in a short time, and can be cured in a short time. The voids in between can be suppressed. Therefore, it is possible to obtain a low-cost, low-energy first-supply type semiconductor device having a flip-chip type semiconductor element.

本発明について、実施例により説明するが、本発明はこれらに限定されるものではない。なお、以下の実施例において、部、%はことわりのない限り、質量部、質量%を示す。   The present invention will be described with reference to examples, but the present invention is not limited thereto. In the following examples, parts and% indicate parts by mass and mass% unless otherwise specified.

〔実施例1〜13、比較例1〜5〕
表1〜3に示す配合で、封止樹脂組成物を調製した。実施例1〜13のいずれも液状樹脂組成物であり、作業性、ハンドリングの容易性、狭ピッチ化対応に優れていた。なお、エポキシ樹脂/マイクロカプセル型促進剤であるHX3932HPに含有されているエポキシ樹脂は、「液状ビスフェノールF型エポキシ/液状ビスフェノールA型エポキシ樹脂」が「54/13」の質量比で混合された状態でのエポキシ当量が、170g/eqであったので、「(B)成分当量/(A)成分当量」を求めるときには、「液状ビスフェノールF型エポキシ+液状ビスフェノールA型エポキシ樹脂」で170g/eqとして計算した。
[Examples 1 to 13, Comparative Examples 1 to 5]
Sealing resin compositions were prepared with the formulations shown in Tables 1 to 3. Each of Examples 1 to 13 was a liquid resin composition, and was excellent in workability, ease of handling, and adaptability to narrow pitch. The epoxy resin contained in HX3932HP, which is an epoxy resin / microcapsule type accelerator, is a state where “liquid bisphenol F type epoxy / liquid bisphenol A type epoxy resin” is mixed in a mass ratio of “54/13”. Since the epoxy equivalent at 170 was 170 g / eq, when calculating “(B) component equivalent / (A) component equivalent”, “liquid bisphenol F type epoxy + liquid bisphenol A type epoxy resin” was 170 g / eq. Calculated.

〔ゲルタイムの評価〕
樹脂組成物のゲルタイムは、150℃に熱した熱板上に、樹脂組成物:5±1mgを供給し、ニードル先端で円を描くようにして攪拌しながら攪拌棒を持ち上げて引き離した場合に、糸引きがなくなるまでの時間を、ストップウォッチで測定した。ゲルタイムの適正範囲は、10〜100秒である。表1〜表3に、測定結果を示す。
[Evaluation of gel time]
The gel time of the resin composition is when the resin composition: 5 ± 1 mg is supplied on a hot plate heated to 150 ° C., and the stirring bar is lifted and pulled away while stirring in a circle at the tip of the needle. The time until stringing disappeared was measured with a stopwatch. The proper range of gel time is 10 to 100 seconds. Tables 1 to 3 show the measurement results.

〔半導体チップを実装した試験片の作製〕
30μmのバンプが、50μmピッチで544個形成された幅:7.3mm、長さ:7.3mm、高さ:125μmの半導体チップ(Siチップ)を準備した。バンプは、SnAgはんだめっきされた銅ピラーである。また、半導体チップのバンプパターンに対応した電極を有する厚さ:360μmのFR−4基板を準備した。この基板を60℃のステージに載置し、この基板の電極上に、23Gのニードルのディスペンサーを用いて、封止樹脂組成物を塗布し、その上から、パナソニックファクトリーソリューションズ製フリップチップボンダー(型番:FCB3)を用いて、160℃から260℃へ2秒で昇温させた後260℃×2秒温度保持、荷重:22Nの条件で半導体チップを圧接し、評価サンプルを作製した。その後、150℃で1時間加熱処理を行い、半導体チップを実装した試験片を作製した。
[Fabrication of test piece mounted with semiconductor chip]
A semiconductor chip (Si chip) having a width: 7.3 mm, a length: 7.3 mm, and a height: 125 μm in which 544 bumps of 30 μm were formed at a pitch of 50 μm was prepared. The bumps are SnAg solder plated copper pillars. In addition, an FR-4 substrate having a thickness of 360 μm having electrodes corresponding to the bump pattern of the semiconductor chip was prepared. This substrate was placed on a stage at 60 ° C., and a sealing resin composition was applied onto the electrode of this substrate using a 23G needle dispenser, and then a flip chip bonder manufactured by Panasonic Factory Solutions (model number) Using FCB3), the temperature was raised from 160 ° C. to 260 ° C. in 2 seconds, and then the semiconductor chip was pressed under the conditions of 260 ° C. × 2 seconds, maintained at a load of 22 N, and an evaluation sample was produced. Thereafter, a heat treatment was performed at 150 ° C. for 1 hour to produce a test piece on which a semiconductor chip was mounted.

〔実装状態の評価〕
《SAT(Scanning Acoustic Tomoguraph)試験》
半導体チップを実装した試験片(試験片数:2)を、パナソニックファクトリーソリューションズ製超音波探傷装置(型番:FCB3)により画層観察した。半導体チップ下に、封止樹脂組成物にボイドが発生しているか、封止樹脂組成物が全面に充填されているか、を観察した。封止樹脂組成物にボイドが確認されたものを、ボイド:「×」、封止樹脂組成物が全面に充填されていないものを、充填:「×」とした。表1〜表3の「SAT」の「ボイド」の行に、〔(ボイドが「×」と評価された試験片数)/(試験片数:2)〕を、表1〜表3の「SAT」の「充填」の行に〔(充填が「×」と評価された試験片数)/(試験片数:2)〕を、示す。
[Evaluation of mounting status]
<< SAT (Scanning Acoustic Tomograph) Test >>
A test piece (number of test pieces: 2) on which a semiconductor chip was mounted was observed with an ultrasonic flaw detector (model number: FCB3) manufactured by Panasonic Factory Solutions. It was observed whether a void was generated in the sealing resin composition under the semiconductor chip or whether the sealing resin composition was filled over the entire surface. The case where void was confirmed in the sealing resin composition was designated as void: “x”, and the case where the sealing resin composition was not filled on the entire surface was designated as filling: “x”. In the row of “Void” of “SAT” in Tables 1 to 3, [(number of test pieces in which the void was evaluated as “×”) / (number of test pieces: 2)] was added to “ [(Number of test pieces evaluated as “×” for filling) / (Number of test pieces: 2)] is shown in the “fill” row of “SAT”.

《平面研磨試験》
半導体チップを実装した試験片(試験片数:2)のチップ部分を、研磨により除去し、ソルダーレジスト開口部を観察した。半導体チップ周辺のソルダーレジスト開口部と、半導体チップ搭載部のボイドを光学顕微鏡により観察した。ソルダーレジスト開口部では、金めっきされた銅の配線が、配線幅:30μm、配線ピッチ:50μmで形成されていた。まず、試験片のボイドの有無を観察した。表1〜3の「平面研磨」の「ボイド」の行に、〔(ボイドが観察された試験片数)/(試験片数:2)〕を示す。詳細には、試験片の半導体チップ周辺のソルダーレジスト開口部でのボイド、特に配線間に跨るボイドに注意をして観察した。表1〜3の「平面研磨」の「チップ周辺のボイド」の行に、〔(ソルダーレジスト開口部でボイドが観察された試験片数)/(試験片数:2)〕を示す。同様に、半導体チップ搭載部のボイドを確認した。表1〜3の「平面研磨」の「半導体チップ搭載部のボイド」の行に、〔(半導体チップ搭載部でボイドが観察された試験片数試験片数)/(試験片数:2)〕を示す。
<Surface polishing test>
The chip part of the test piece (number of test pieces: 2) on which the semiconductor chip was mounted was removed by polishing, and the solder resist opening was observed. The solder resist opening around the semiconductor chip and the void on the semiconductor chip mounting portion were observed with an optical microscope. In the solder resist opening, gold-plated copper wiring was formed with a wiring width of 30 μm and a wiring pitch of 50 μm. First, the presence or absence of voids in the test piece was observed. [(Number of test pieces in which voids were observed) / (Number of test pieces: 2)] is shown in the “void” row of “Surface polishing” in Tables 1 to 3. Specifically, observation was made with attention to voids at the opening of the solder resist around the semiconductor chip of the test piece, particularly voids straddling the wiring. In the row of “Void around the chip” of “Surface polishing” in Tables 1 to 3, [(number of test pieces in which voids were observed at the opening of the solder resist) / (number of test pieces: 2)] is shown. Similarly, the void of the semiconductor chip mounting part was confirmed. In the row of “Semiconductor chip mounting portion voids” of “Surface polishing” in Tables 1 to 3, [(number of test pieces with voids observed on semiconductor chip mounting portion) / (number of test pieces: 2)] Indicates.

〔リフローテスト〕
半導体チップを実装した試験片(試験片数:5)を、パナソニックファクトリーソリューションズ製超音波探傷装置(型番:FCB3)により画層観察した。その後、高温高湿層(温度:30℃、湿度:60%rh)中にて196時間吸湿させた。吸湿後、最高温度260℃のリフロー炉を3回繰り返し通過させ、再度同様の画像観察を行った。吸湿、リフロー後に、封止樹脂組成物のデラミネーションが発生しているものを「×」とした。表1〜表3に、試験結果を示す。
[Reflow test]
A test piece (number of test pieces: 5) on which a semiconductor chip was mounted was observed with an ultrasonic flaw detector (model number: FCB3) manufactured by Panasonic Factory Solutions. Then, it was made to absorb moisture in a high temperature and high humidity layer (temperature: 30 ° C., humidity: 60% rh) for 196 hours. After moisture absorption, the reflow furnace having a maximum temperature of 260 ° C. was repeatedly passed three times, and the same image observation was performed again. A sample in which delamination of the encapsulating resin composition occurred after moisture absorption and reflow was designated as “x”. Tables 1 to 3 show the test results.

〔導通テスト〕
半導体チップを実装した試験片の抵抗値測定パッド間の抵抗値を測定した。半導体チップ−基板間の接続が良好な試験片の抵抗値測定パッド間の抵抗の設計値は、42Ωであった。抵抗値測定パッド間の抵抗値が50Ω以上のものを「×」とした。表1〜表3に、試験結果を示す。
[Continuity test]
The resistance value between the resistance value measurement pads of the test piece on which the semiconductor chip was mounted was measured. The design value of the resistance between the resistance value measurement pads of the test piece with good connection between the semiconductor chip and the substrate was 42Ω. A resistance value between the resistance measurement pads of 50Ω or more was designated as “x”. Tables 1 to 3 show the test results.

Figure 2013253183
Figure 2013253183

Figure 2013253183
Figure 2013253183

Figure 2013253183
Figure 2013253183

試験結果をまとめると、実施例1〜13の全てで、先供給型フリップチップボンディングプロセスに適した低粘度であり、封止樹脂組成物が半導体チップ全面に充填され、短時間での硬化が可能であった。また、半導体チップ周辺のソルダーレジスト開口部および半導体チップ搭載部でボイドが確認されなかった。さらに、リフローテスト、導通テストの結果も良好であった。これに対して、(C)成分を含まない比較例1は、SAT試験と平面研磨でボイドが観察された。(B)成分の硬化剤当量が少なすぎる比較例2は、SAT試験でボイドが観察され、リフローテストの結果も悪かった。(B)成分の硬化剤当量が多すぎる比較例3は、SAT試験と平面研磨でボイドが観察され、リフローテストの結果も悪かった。(C)成分の含有量が少なすぎる比較例4は、平面研磨でボイドが観察された。(C)成分の含有量が多すぎる比較例5は、平面研磨でボイドが観察され、導通テストの結果が悪かった。   To summarize the test results, all of Examples 1 to 13 have a low viscosity suitable for the pre-feed type flip chip bonding process, the entire surface of the semiconductor chip is filled with the sealing resin composition, and can be cured in a short time. Met. In addition, no voids were confirmed in the solder resist opening around the semiconductor chip and in the semiconductor chip mounting portion. Furthermore, the results of the reflow test and the continuity test were also good. On the other hand, in Comparative Example 1 containing no component (C), voids were observed in the SAT test and the surface polishing. In Comparative Example 2 in which the amount of the curing agent equivalent of the component (B) was too small, voids were observed in the SAT test, and the results of the reflow test were also poor. In Comparative Example 3 in which the amount of the curing agent equivalent of the component (B) was too large, voids were observed in the SAT test and surface polishing, and the results of the reflow test were also poor. In Comparative Example 4 in which the content of the component (C) was too small, voids were observed by planar polishing. In Comparative Example 5 in which the content of the component (C) was too large, voids were observed by planar polishing, and the result of the continuity test was poor.

上記のように、本発明の先供給型液状半導体封止樹脂組成物は、半導体チップ−基板間への充填性がよく、短時間での硬化が可能で、封止樹脂組成物のボイドが無く、先供給型フリップチップボンディングプロセス向けに大変有用である。   As described above, the pre-feed type liquid semiconductor encapsulating resin composition of the present invention has a good filling property between the semiconductor chip and the substrate, can be cured in a short time, and has no voids in the encapsulating resin composition. Very useful for pre-supplied flip chip bonding processes.

Claims (4)

(A)液状ビスフェノールA型エポキシ樹脂、液状ビスフェノールF型エポキシ樹脂および液状ナフタレン型エポキシ樹脂からなる群より選択される少なくとも1種の液状エポキシ樹脂、
(B)硬化剤、
(C)プレゲル剤、ならびに
(D)硬化促進剤
を含有し、
(B)成分の硬化剤当量が、(A)成分のエポキシ当量の0.6〜1.1倍であり、かつ(C)成分が、(A)成分と(B)成分と(C)成分と(D)成分との合計:100質量部に対して、6〜11質量部であることを特徴とする、先供給型液状半導体封止樹脂組成物。
(A) at least one liquid epoxy resin selected from the group consisting of a liquid bisphenol A type epoxy resin, a liquid bisphenol F type epoxy resin, and a liquid naphthalene type epoxy resin,
(B) a curing agent,
(C) contains a pregel agent, and (D) a curing accelerator,
The curing agent equivalent of the component (B) is 0.6 to 1.1 times the epoxy equivalent of the component (A), and the component (C) is the components (A), (B), and (C). And (D) component: 6 to 11 parts by mass with respect to 100 parts by mass, a pre-supplied liquid semiconductor encapsulating resin composition.
(C)成分が、メタクリル酸メチル・メタクリル酸ブチル共重合体である、請求項1記載の先供給型液状半導体封止樹脂組成物。   The pre-feed type liquid semiconductor sealing resin composition according to claim 1, wherein the component (C) is a methyl methacrylate / butyl methacrylate copolymer. さらに、(E)充填剤を含有する、請求項1または2記載の先供給型液状半導体封止樹脂組成物。   The pre-feed type liquid semiconductor sealing resin composition according to claim 1 or 2, further comprising (E) a filler. 請求項1〜3のいずれか1項記載の先供給型液状半導体封止樹脂組成物を用いて封止されたフリップチップ型半導体素子を有する、半導体装置。
The semiconductor device which has a flip chip type semiconductor element sealed using the pre-supplied liquid semiconductor sealing resin composition of any one of Claims 1-3.
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JP2017082022A (en) * 2015-10-22 2017-05-18 ナガセケムテックス株式会社 Epoxy resin adhesive
JP2018190911A (en) * 2017-05-11 2018-11-29 ナミックス株式会社 Die Bonding Agent

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WO2010090246A1 (en) * 2009-02-05 2010-08-12 三菱レイヨン株式会社 Powdery vinyl polymer, curable resin composition, and cured object
JP2011084597A (en) * 2009-10-13 2011-04-28 Asahi Kasei E-Materials Corp Sealing liquid-like epoxy resin composition, underfill material, and semiconductor device using them
WO2013094759A1 (en) * 2011-12-21 2013-06-27 三菱レイヨン株式会社 Polymer powder, curable resin composition, and cured product thereof

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JP2003049050A (en) * 2001-08-06 2003-02-21 Nagase Chemtex Corp Epoxy resin composition containing pre-gelatinizing agent
WO2010090246A1 (en) * 2009-02-05 2010-08-12 三菱レイヨン株式会社 Powdery vinyl polymer, curable resin composition, and cured object
JP2011084597A (en) * 2009-10-13 2011-04-28 Asahi Kasei E-Materials Corp Sealing liquid-like epoxy resin composition, underfill material, and semiconductor device using them
WO2013094759A1 (en) * 2011-12-21 2013-06-27 三菱レイヨン株式会社 Polymer powder, curable resin composition, and cured product thereof

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JP2017082022A (en) * 2015-10-22 2017-05-18 ナガセケムテックス株式会社 Epoxy resin adhesive
JP2018190911A (en) * 2017-05-11 2018-11-29 ナミックス株式会社 Die Bonding Agent

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