JP2013251286A - Bypass diode device and method for inspecting the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that a conventional bypass diode device has poor working efficiency and difficulties in reducing operation time because diodes are individually attached to cells of a photovoltaic device.SOLUTION: In a bypass diode device 1, a plurality of diodes 5a-5i are formed and connected in series on an upper surface of a support substrate 2. A plurality of terminal connection portions 4 connected to the diodes 5a-5i are disposed correspondingly to outer connection electrodes of individual cells of the photovoltaic device. According to this structure, the plurality of diodes 5a-5i are respectively connected to the individual cells of the photovoltaic device by a single attachment operation, and working efficiency of the attachment is improved to reduce attachment time.

Description

  The present invention relates to a bypass diode device in which a plurality of diodes are arranged on an upper surface of a support substrate, and an inspection method thereof.

  As an example of a conventional bypass diode device, a structure shown in FIGS. 7A and 7B is known. First, as shown in FIG. 7A, the solar cell module 31 has a plurality of solar cells 32 connected in series, and output electrodes (not shown) are connected to both ends of the solar cells connected in series. Power is taken from the output electrode. On the other hand, the terminal box 33 has external connection cables 34 and 35, and connectors 36 and 37 are connected to the tips of the external connection cables 34 and 35. And the terminal box 33 connected to each photovoltaic cell 32 is electrically connected via connectors 36 and 37. In addition, the terminal box 33 is arrange | positioned in the back surface center part and peripheral part of the photovoltaic cell 32. FIG.

  Next, as shown in FIG. 7B, an N-type external connection terminal plate 39, intermediate terminal plates 40 and 41, and a P-type partial connection terminal plate 42 are arranged in the casing 38 of the terminal box 33. . And the output electrode 43 of the photovoltaic cell 32 is connected to those terminal boards 39-42, and the external connection cables 34 and 35 are connected to the edge part of the external connection terminals 39 and 42, respectively. Further, two diodes 44 are connected between the N-type external connection terminal plate 39 and the intermediate terminal plate 40, and two diodes 45 are connected between the intermediate terminal plates 40, 41, Two diodes 46 are also connected between the terminal plate 41 and the P-type external connection terminal plate 42 (see, for example, Patent Document 1).

JP 2007-329319 A (page 5-7, FIG. 1-2)

  As described above, in the solar cell module 31 shown in FIG. 7A, a plurality of solar cells 32 are connected in series, and a terminal box 33 in which a bypass diode device is configured is connected to each individual solar cell 32. Is done. With this structure, the same number of terminal boxes 33 as the solar cells 32 are required, and the terminal boxes 33 are individually manufactured. Therefore, there is a problem that it is difficult to reduce the manufacturing cost of the terminal boxes 33. Furthermore, since the terminal box 33 needs to be individually installed for each solar battery cell 32, there is a problem that the installation work time is difficult to be shortened and the work cost is difficult to reduce.

  Further, the terminal box 33 is installed on the back surface side of the solar battery cell 32, so that the terminal box 33 protrudes with respect to the back surface of the solar battery cell 32. With this structure, when the solar cell module 31 is installed on the roof of a building or the like, there is also a problem that the projecting terminal box 33 becomes an obstacle and the workability deteriorates. For example, there is a problem that the terminal box 33 is caught by an operator or a work tool during installation work of the solar battery module 31 and detached from the solar battery cell 32. Similarly, the external connection cables 34 and 35 that electrically connect the terminal boxes 33 to each other are exposed to the outside of the solar cell module 31, so that the external connection cables 34 and 35 are disconnected or disconnected during the installation work or the like. There is a problem.

  Therefore, in order to form a thinner bypass diode device, it has been studied to integrate a thin film solar cell and a bypass diode.

  The manufacturing method will be described below. First, as shown in FIG. 8A, a transparent substrate 51 is prepared, and a transparent electrode 52 is formed on the upper surface of the transparent substrate 51. Next, for example, a groove 53 is formed in the transparent electrode 52 by a laser scribing method, and the transparent electrode 52 is divided into cells. Then, a photoelectric conversion layer 54 is formed on the transparent substrate 51 so as to cover the transparent electrode 52. Here, as the photoelectric conversion layer 54, for example, a semiconductor layer made of a silicon material is used, and the inside of the groove 53 that partitions the transparent electrode 52 is also buried.

  Next, as shown in FIG. 8B, a groove 55 is formed in the photoelectric conversion layer 54 by, for example, a laser scribing method, and the photoelectric conversion layer 54 is divided into cells. Then, a first back electrode 56 is formed on the transparent substrate 51 so as to cover the photoelectric conversion layer 54, and the first back electrode 56 is also embedded in the groove 55 that partitions the photoelectric conversion layer 54.

  Next, as shown in FIG. 8C, a groove 57 is formed in the first back electrode 56 and the photoelectric conversion layer 54 by, for example, a laser scribing method, and the thin film solar cell 58 formed on the transparent substrate 51 is formed into a cell. Divide into each. Next, a thin film diode 59 is formed on the transparent substrate 51 so as to cover the thin film solar cell 58. Here, the thin film diode is formed of a PN junction diode, and is embedded in the groove 57 that separates the thin film solar cell 58.

  Next, as shown in FIG. 8D, the groove 60 is formed in the thin film diode 59 by, for example, a laser scribing method, and the thin film diode 59 is divided so as to correspond to the cells of the individual thin film solar cells 58. . Then, a second back electrode 61 is formed on the transparent substrate 51 so as to cover the thin film diode 59, and the second back electrode 61 is also embedded in the groove 60 that separates the thin film diode 59.

  Finally, as shown in FIG. 8E, a groove 62 is formed in the second back electrode 61 by, for example, a laser scribing method, and the bypass diode 63 is divided so as to correspond to each thin film solar cell 58. (For example, JP-A-2005-268719 (see page 7-9, Fig. 1-2).

  As a result, as shown in FIG. 8E, the thin film solar cell 58 and the bypass diode 63 are laminated and formed integrally on the upper surface of the same transparent substrate 51. And since the bypass diode 63 is arrange | positioned corresponding to every cell of the thin film solar cell 58, the grooves 60 and 62 are formed by the laser scribing method. Therefore, for example, if the transparent electrode 52 disposed on the lower surface of the grooves 60 and 62 is cut due to an adjustment error such as the laser output amount or the scribe time, the series connection structure between the cells of the thin film solar cell 58 is destroyed. End up. As a result, when the bypass diode 63 is formed, a part of the thin film solar cell 58 is destroyed, so that there is a problem that all the thin film solar cells 58 and the bypass diode 63 on the transparent substrate 51 are handled as defective products. Similarly, since the thin film solar cell 58 and the bypass diode 63 are formed on the same transparent substrate 51 on the same production line, if a problem occurs when the bypass diode 63 is formed, the thin film solar cell 58 is formed. Will be treated as defective.

  Further, since the thin-film solar cell 58 and the bypass diode 63 are formed as an integrated type, when one of them fails during use, it is necessary to replace the entire device, which causes a cost problem.

  In the bypass diode device of the present invention, a support substrate, a first electrode layer formed on the support substrate, and a junction that covers the first electrode layer and is formed on the support substrate and functions as a diode. A semiconductor layer having a region; a second electrode layer formed on the semiconductor layer, at least partially facing the first electrode layer; the first electrode layer; the semiconductor layer; and the second electrode layer. A slit for opening the electrode layer, a first conductive resin layer embedded in the slit and formed on the second electrode layer, a light-shielding resin layer formed on the semiconductor layer, A terminal connection portion electrically connected to the second electrode layer through an opening region of the light-shielding resin layer, the second electrode layer being made of a transparent metal material; The first conductive resin layer formed on the terminal connection portion A main electrode portion arranged downward, characterized in that it consists of the branch electrode section extending in a comb-like from the main electrode portion.

  In the inspection method for a bypass diode device according to the present invention, the first conductive resin layer is formed, and the measurement terminal of the measuring device is applied to the first conductive resin layer before forming the light-shielding resin layer. The characteristics of the semiconductor layer are measured by irradiating the semiconductor layer with light for measurement from above the first conductive resin layer.

  In the present invention, the bypass diode device is formed separately from the photovoltaic device, and a plurality of diodes connected in series are formed in the bypass diode device, thereby improving the handleability of the bypass diode device.

  In the present invention, the cathode electrode layer is formed of a transparent metal material, and the conductive resin layer is formed on the upper surface thereof, whereby the characteristic inspection of the semiconductor layer is easily performed.

  Further, in the present invention, the terminal connection portion of the bypass diode device is arranged with high positional accuracy with respect to the cell of the photovoltaic device, and the diode is installed for a plurality of cells in one installation operation, and the installation operation thereof Time is greatly reduced.

  Further, in the present invention, the support substrate is formed using a film material, the thinning of the bypass diode device is realized, the mounting property of the bypass diode device of the photovoltaic device is improved, and the flatness of the mounting surface is realized. Is done.

  In the present invention, the characteristic inspection of the semiconductor layer can be performed before the light shielding resin layer of the bypass diode device is formed, and the manufacturing cost for the subsequent steps can be reduced.

  Further, in the present invention, the conductive layer is disposed in the slit forming region for connecting adjacent diodes in series, thereby preventing the slit from reaching the support substrate.

  In the present invention, since the material for burying the slit and the conductive layer are made of the same material, the connectivity between the two is improved, and the contact property of the electrode portion of the diode is improved.

  In the present invention, the bypass diode device is covered with a light-shielding resin, so that the diode is prevented from independently operating due to sunlight or the like.

  Moreover, in this invention, after forming a several diode in the surface side of a polyimide layer, the moisture resistance of a bypass diode apparatus is improved by bonding a film substrate on the back surface side of a polyimide layer.

It is a top view explaining the bypass diode device in an embodiment of the present invention. It is (A) sectional drawing and (B) top view explaining the bypass diode device in an embodiment of the invention. It is sectional drawing explaining the installation condition of the bypass diode apparatus in embodiment of this invention, (A), (B) Circuit diagram. It is sectional drawing explaining the manufacturing method of the bypass diode apparatus in embodiment of this invention. It is sectional drawing explaining the manufacturing method of the bypass diode apparatus in embodiment of this invention. It is sectional drawing explaining the manufacturing method of the bypass diode apparatus in embodiment of this invention. It is the (A) perspective view and (B) top view explaining the bypass diode device in the conventional embodiment. It is (A) sectional drawing, (B) sectional drawing, (C) sectional drawing, (D) sectional drawing, (E) sectional drawing explaining the manufacturing method of the bypass diode apparatus in conventional embodiment.

  Hereinafter, a bypass diode device according to an embodiment of the present invention will be described. FIG. 1 is a plan view for explaining a bypass diode device according to the present embodiment. 2A is a cross-sectional view of the bypass diode device shown in FIG. FIG. 2B is a plan view for explaining an electrode structure of each diode of the bypass diode device shown in FIG. FIG. 3A is a cross-sectional view illustrating a situation where the bypass diode device is installed in the photovoltaic device. FIG. 3B is a circuit diagram in which the bypass diode device is installed in the photovoltaic device.

  First, as shown in FIG. 1, the bypass diode device 1 is configured as a module in which a plurality of diodes are arranged in a matrix on a support substrate 2. Although details will be described later, the bypass diode device 1 is bonded to a photovoltaic device such as a solar cell, thereby preventing the cells of the photovoltaic device from being destroyed by, for example, a hot spot phenomenon.

  Specifically, FIG. 1 shows a surface to be bonded to the photovoltaic device of the bypass diode device 1, and a light-shielding resin layer 3 is formed on the upper surface of the support substrate 2. Then, from the resin layer 3 on the support substrate 2, 30 terminal connection portions 4 in 3 rows (paper surface X-axis direction) and 10 columns (paper surface Y-axis direction) are exposed. In the bypass diode device 1, for example, one diode 5 a to 5 i is formed between the terminal connection portions 4 in the paper surface Y-axis direction, and one row of 10 diodes 5 a to 5 i arranged in the paper Y-axis direction includes: They are connected in series by the electrode structure. Similarly, in the other two rows, ten diodes arranged in the Y-axis direction on the paper surface are connected in series. As indicated by the alternate long and short dash line, in the bypass diode device 1, for example, a diode connected in series in the Y-axis direction on the paper surface is one module, and three modules are formed. And the shape of each diode 5a-5i of the bypass diode apparatus 1 is formed according to the shape of each cell of a photovoltaic apparatus. Further, the bypass diode device 1 has a sheet shape having a thickness of about 0.4 mm, for example, and is excellent in flexibility.

  With this structure, the positions of the terminal connection portions 4 of the respective diodes of the bypass diode device 1 and the external connection electrodes of the respective cells of the photovoltaic device can be made to correspond to each other. By attaching to the electromotive force device side, the mounting operation of the bypass diode device 1 is completed. As in the prior art, the work of individually attaching the diode to each cell of the photovoltaic device can be omitted, and the workability is improved. Furthermore, even when the bonding surface with the photovoltaic device is a curved surface, the bypass diode device 1 has flexibility, so that the bypass diode device 1 can be bonded to the curved surface. And each terminal connection part 4 of the bypass diode apparatus 1 is arrange | positioned with a sufficient positional accuracy with respect to the external connection electrode of each cell of a photovoltaic apparatus, and the bypass diode apparatus 1 and a photovoltaic apparatus are favorable. A connection structure is realized.

  Each diode of the bypass diode device 1 is not limited to the rectangular shape shown in FIG. 1 and can be changed to any shape according to the cell shape of the photovoltaic device. is there. For example, when the cell shape of the photovoltaic device is a round shape, a polygonal shape, or the like, each diode of the bypass diode device 1 is also formed in the same shape, and the terminal connection portion 4 is also an external connection electrode of each cell. Arranged according to the position. Further, in the bypass diode device 1, for example, three diodes arranged in the X-axis direction on the paper surface may be connected in series to form one module, and any design change may be made according to the cell arrangement of the photovoltaic device. Is possible.

  Next, FIG. 2A shows the diode 5 a in the bypass diode device 1.

  First, the support substrate 2 is formed by bonding an insulating layer 7 made of, for example, a polyimide coat film to the upper surface of a film substrate 6 having excellent heat resistance such as polyethylene naphthalate, polycarbonate, polyethylene terephthalate, and polyvinyl petital. .

  Next, for example, a conductive resin layer 8 made of a silver paste is formed on the upper surface of the support substrate 2, and the film thickness is, for example, about 10 to 30 μm. The conductive resin layer 8 is provided in order to improve the contact property between the electrodes of the adjacent diodes 5 a and 5 b, and is disposed below the formation region of the terminal connection portion 4. Specifically, as shown in FIG. 1, the conductive resin layer 8 is arranged in the same shape, for example, below the 30 terminal connection portions 4. The conductive resin layer 8 is also used as a penetration preventing layer for laser processing when the slit 12 is formed.

  Next, the anode electrode layer 9 is formed on the support substrate 2 so as to cover the conductive resin layer 8. The film thickness of the anode electrode layer 9 is, for example, about 200 nm, and is disposed over a wider area than the conductive resin layer 8. The anode electrode layer 9 is made of a metal film such as tungsten, aluminum, titanium, nickel, or copper. The anode electrode layer 9 may be made of a transparent material such as tin-added indium oxide (ITO).

  Next, the semiconductor layer 10 is formed on the support substrate 2 so as to cover the anode electrode layer 9. The film thickness of the semiconductor layer 10 is, for example, about 500 nm. The semiconductor layer 10 is formed using amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, or the like, and a PN junction or PIN junction is formed in the semiconductor layer 10.

  Next, the cathode electrode layer 11 is formed on the semiconductor layer 10. The thickness of the cathode electrode layer 11 is, for example, about 100 nm. The cathode electrode layer 11 is formed of a metal layer that transmits light, such as zinc oxide, indium tin oxide, tin oxide, or tin-added indium oxide (ITO). As will be described in detail later, since the cathode electrode layer 11 is formed of a transparent metal material, the inspection light is transmitted through the cathode electrode layer 11 to the semiconductor layer in the characteristic inspection process of the semiconductor layer 10. It becomes possible to enter.

  Next, the slit 12 is formed so as to penetrate the anode electrode layer 9, the semiconductor layer 10, and the cathode electrode layer 11 by, for example, a laser scribing method. As shown in FIG. 2B, the slit 12 extends, for example, the cathode electrode layer 11 in the X-axis direction on the paper surface. A part of the anode electrode layer 9 of the adjacent diode is disposed below the formation region of the cathode electrode layer 11, and both are electrically connected via the slit 12 structure.

  Next, a conductive resin layer 13 made of, for example, silver paste is formed on the upper surface of the cathode electrode layer 11 and is disposed below the formation region of the terminal connection portion 4 (see FIG. 1), similarly to the conductive resin layer 8. . The conductive resin layer 13 is also embedded in the slit 12 and connected to the anode electrode layer 9 and the conductive resin layer 8 exposed from the slit 12. With this structure, the conductive resin layer 13 is also connected to the conductive resin layer 8, and the conductive electrode layer 8 functions as a part of the anode electrode layer 9. As illustrated, the cathode electrode layer 11 of the diode 5 a is electrically connected to the anode electrode layer 9 of the adjacent diode 5 b through the conductive resin 13. As described above with reference to FIG. 1, a row of ten diodes 5a to 5i arranged in the Y-axis direction on the paper surface are connected in series by this electrode structure.

  Here, FIG. 2B shows the arrangement of the anode electrode layer 9, the cathode electrode layer 11, and the conductive resin layer 13. A solid line indicates an arrangement region of the conductive resin layer 13, a one-dot chain line indicates an arrangement region of the anode electrode layer 9, and a two-dot chain line indicates an arrangement region of the cathode electrode layer 11. As shown by a solid line, the conductive resin layer 13 is in a comb-teeth state from the main electrode portion 13a disposed below the formation region of the terminal connection portion 4 (see FIG. 1) and from the main electrode portion 13a to the Y-axis direction on the paper surface. The branch electrode portion 13b is disposed on the branch electrode portion 13b. By laminating the conductive resin layer 13 and the cathode electrode 11, the current from the cathode electrode layer 11 can flow more efficiently, and the current characteristics of the bypass diode device 1 are improved. Further, since the conductive resin layer 13 has a comb shape, light for characteristic inspection of the semiconductor layer 10 can enter the semiconductor layer 10 through the gap.

  On the other hand, as indicated by the alternate long and short dash line, the anode electrode layer 9 and the cathode electrode layer 11 are plate-like bodies, and the opposing region of the anode electrode layer 9 and the cathode electrode layer 11 is mainly used as a diode. This is a functional area. This structure can facilitate the inspection of the bypass diode device 1 as will be described later.

  Next, the resin layer 3 is formed so as to cover the cathode electrode layer 11 and the semiconductor layer 10. The resin layer 3 is formed of an epoxy resin or the like excellent in light shielding properties, and the film thickness of the resin layer 3 is, for example, about 15 to 20 μm. As illustrated by the arrows, the resin layer 3 prevents sunlight or the like incident from the photovoltaic device side from entering the semiconductor layer 10, and the diodes of the photovoltaic device are caused by the incidence of sunlight or the like. To prevent it from working. An opening 14 is formed in a region where the terminal connection portion 4 of the resin layer 3 is formed.

  Next, the terminal connection portion 4 is embedded in the opening 14 and formed on the upper surface of the conductive resin layer 13. The terminal connection portion 4 is formed, for example, by screen-curing Cu paste and then thermosetting. And the bypass diode apparatus 1 is installed in a photovoltaic apparatus because the terminal connection part 4 electrically connects with the electrode for external connection of each cell of a photovoltaic apparatus.

  Next, FIG. 3A shows a structure in which the bypass diode device 1 is installed in the photovoltaic device 15.

  The photovoltaic device 15 is mainly composed of a glass substrate 16, a transparent electrode layer 17, a semiconductor photoactive layer 18, and a metal electrode layer 19. In addition, the opposing area | region of the transparent electrode layer 17 and the metal electrode layer 19 within the cell of the photovoltaic apparatus 15 mainly functions as a diode.

  Specifically, the transparent electrode layer 17 is selectively formed on the upper surface of the glass substrate 16 and is formed of zinc oxide, indium tin oxide, tin oxide, tin-added indium oxide (ITO), or the like. The semiconductor photoactive layer 18 is formed on the upper surface of the glass substrate 16 so as to cover the transparent electrode layer 17. The semiconductor photoactive layer 18 is formed using amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, or the like, and the semiconductor photoactive layer 18 is formed with a PN junction or a PIN junction.

  Next, the semiconductor photoactive layer 18 is divided for each cell by the slit 20, and a part of the transparent electrode layer 17 is exposed from the slit 20. The metal electrode layer 19 is selectively formed on the upper surface of the semiconductor photoactive layer 18, and the metal electrode layer 19 is embedded in the slit 20 and electrically connected to the transparent electrode layer 17 of the adjacent diode. The metal electrode layer 19 is made of, for example, tungsten, aluminum, titanium, nickel, copper or the like. In the illustrated photovoltaic device 15, three cells partitioned by the slit 20 are illustrated and connected in series by the electrode structure described above.

  As shown in the figure, the terminal connection 4 of each diode of the bypass diode device 1 is connected corresponding to the metal electrode layer 19 of each cell of the photovoltaic device 15, and each cell of the photovoltaic device 15 is connected to the diode. Thus, a structure that is individually protected is realized. And the terminal connection part 4 of the bypass diode apparatus 1 and the metal electrode layer 19 of the photovoltaic apparatus 15 are connected by heating, after aligning both. With this structure, it becomes possible to connect the diode of the bypass diode device 1 to a plurality of cells of the photovoltaic device 15 at one time, the mounting workability is greatly improved, and the working time is also greatly shortened. The

  Next, in FIG. 3B, a circuit diagram of the structure shown in FIG. 3A is shown. A region indicated by a one-dot chain line is the bypass diode device 1, and a region indicated by a two-dot chain line is a photovoltaic device. 15. The cell of the photovoltaic device 15 is, for example, a thin film photoelectric conversion cell, and the photovoltaic device 15 is integrated by connecting a plurality of cells in series. In the photovoltaic device 15, for example, bird droppings or tree leaves adhere to the glass substrate 16 that is the light receiving surface of the cell and is shielded from light so that the amount of photovoltaic power in the shielded cell is reduced. To do. In this case, the cell in which the amount of photovoltaic power is reduced becomes a diode connected in the opposite direction to the direction of the generated current indicated by the arrow, and acts as a very large resistor. As a result, in the photovoltaic device 15 having a large number of integrated stages, a large reverse voltage is applied to a cell having a reduced amount of photovoltaic power, a hot spot phenomenon occurs, and local destruction occurs.

  However, when the amount of photovoltaic power decreases in the cell indicated by the dotted line 21 of the photovoltaic device 15, the generated current flows to the diode side of the bypass diode device 1 connected in parallel with the cell, and the hot spot phenomenon. Is prevented from occurring.

  In the bypass diode device 1 according to the present embodiment, the case where the insulating layer 7 made of the polyimide coat film is bonded to the upper surface of the film substrate 6 as the support substrate 2 has been described. However, the present invention is not limited to this case. For example, a metal substrate whose surface is covered with an insulating film such as a glass substrate or a resin film may be used as the support substrate 2, and the insulating layer 7 is not a polyimide coat film, but ensures insulation, and the support substrate If 2 has flexibility, other insulating resins such as liquid crystal polymer may be formed.

  In FIG. 3, the cell of the photovoltaic device 15 and the terminal connection portion 4 of the bypass diode device 1 correspond one-to-one, but one bypass diode can be associated with a plurality of cells. is there. That is, the interval between the terminal connection portions 4 of the bypass diode device 1 may be an integer multiple of the interval between cells of the photovoltaic device. In addition, various modifications can be made without departing from the scope of the present invention.

  Next, a method for manufacturing a bypass diode device according to another embodiment of the present invention will be described. 4-6 is sectional drawing for demonstrating the manufacturing method of a bypass diode apparatus. In this embodiment, in order to describe the manufacturing method of the bypass diode device shown in FIGS. 1 to 3, the same reference numerals are given to the same constituent members, and FIGS. refer.

  First, as shown in FIG. 4, an auxiliary substrate 22 made of, for example, a glass substrate or a stainless steel substrate is prepared, and an insulating layer 7 made of a polyimide coating film is formed on the surface side of the auxiliary substrate 22 by, for example, a coating method. Next, the conductive resin layer 8 is screen-printed on the front surface side (insulating layer 7 side) of the auxiliary substrate 22 and, for example, as shown in FIG. 1, 3 rows (paper surface X-axis direction) 10 columns (paper surface Y-axis direction). The conductive resin layer 8 is formed at 30 locations.

  Next, the anode electrode layer 9 is formed by sputtering, for example, so as to cover the conductive resin layer 8 on the surface side of the auxiliary substrate 22. Then, the groove 23 is formed by a method such as laser processing or etching, and processed into a shape that separates the adjacent diodes 5a and 5b. In addition, as a material of the anode electrode layer 9, tungsten, aluminum, titanium, nickel, copper, etc. are used, The film thickness is about 200 nm, for example.

  Next, as shown in FIG. 5, the semiconductor layer 10 is formed on the surface side of the auxiliary substrate 22 by, for example, the CVD method so as to cover the anode electrode layer 9. As the semiconductor layer 10, amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, or the like is deposited. For example, an impurity is implanted and diffused in the semiconductor layer 10 to form a PN junction or a PIN junction. The film thickness of the semiconductor layer 10 is, for example, about 500 nm.

  Next, the cathode electrode layer 11 is formed by sputtering, for example, so as to cover the semiconductor layer 10 on the surface side of the auxiliary substrate 22. Then, the groove 24 is formed by a method such as laser processing or etching, and the cathode electrode layer 11 is processed into a plate-like body indicated by a two-dot chain line in FIG. Further, the slit 12 is formed below the formation region of the terminal connection portion 4 (see FIG. 6) by a laser scribing method. The slit 12 is formed through the anode electrode layer 9, the semiconductor layer 10, and the cathode electrode layer 11. The conductive resin layer 8 is used as a laser beam penetration preventing layer when the slit 12 is formed, and prevents the insulating layer 7 from being cut by the laser beam.

  Next, as shown in FIG. 6, the conductive resin layer 13 made of, for example, silver paste is formed on the surface side of the auxiliary substrate 22 by screen printing. The conductive resin layer 13 is used to electrically connect the cathode electrode layer 11 and the anode electrode layer 9 of the adjacent diode. Therefore, like the conductive resin layer 8, the conductive resin layer 13 is disposed below the region where the terminal connection portion 4 is formed, and is embedded in the slit 12.

  Next, the resin layer 3 is formed on the surface side of the auxiliary substrate 22 by screen printing. The resin layer 3 is, for example, an epoxy resin excellent in light shielding properties, and the film thickness thereof is, for example, about 300 nm. An opening 14 is formed in the resin layer 3 so that the conductive resin layer 13 is exposed, and a Cu paste is screen-printed on the surface side of the auxiliary substrate 22 so as to embed the inside of the opening 14, thereby connecting terminals. Part 4 is formed.

  Next, the auxiliary substrate 22 is peeled off from the interface with the insulating layer 7. Then, a film substrate 6 having a size equal to or larger than that of the insulating layer 7 is prepared, and the film substrate 6 and the insulating layer 7 are bonded together to form the support substrate 2 of the bypass diode device 1. Thereafter, the support substrate 2 and the like are cut into a desired shape, and the bypass diode device 1 is completed. In addition, as shown with the dashed-dotted line of FIG. 1, when the several module is formed on the support substrate 2, the bypass diode apparatus 1 is cut | disconnected by the cutting line, and it goes to each bypass diode apparatus 1. It may be classified as As a material of the film substrate 6, for example, a film material having excellent heat resistance such as polyethylene naphthalate, polycarbonate, polyethylene terephthalate, polyvinyl petital, and the like is used.

  Here, the inspection method of the bypass diode device 1 according to the present invention will be described. The bypass diode device 1 includes an anode electrode layer 9, a semiconductor layer 10, and a cathode electrode layer 11 without the resin layer 3. When light is applied from the transparent cathode electrode layer 11 side, the semiconductor layer 10 becomes photoelectric. It plays the role of a conversion layer and operates as a solar cell. Therefore, as shown in FIG. 2B, after forming the comb-like branch electrode portion 13b on the conductive resin layer 13, before forming the resin layer 3, the measurement terminal of the measuring device is connected to the conductive resin layer 13. By making light incident from the contact cathode electrode 11 side and measuring current and voltage characteristics, the characteristics of the semiconductor layer 10 can be measured, and the bypass diode device 1 can be inspected. In other words, it is possible to measure the characteristics of the bypass diode device 1 with the same measuring device as a film-type solar cell that also serves many devices in the manufacturing process, and there is no need to purchase a new measuring device, thus reducing manufacturing costs. Is done. Further, by measuring the characteristics of the semiconductor layer at this stage, it is possible to remove those that do not satisfy a certain quality condition, and the subsequent process becomes unnecessary, so that the manufacturing cost is suppressed.

  As described above, the bypass diode device 1 is formed as a structure different from that of the photovoltaic device 15 and then bonded to the photovoltaic device 15. With this configuration, compared to the case where the photovoltaic device and the bypass diode device are formed on the same substrate, the photovoltaic device is not defective when the bypass diode device is formed. Further, when the bypass diode device is broken when used as a photovoltaic device, it can be dealt with by replacing only the bypass diode device, and the product maintenance cost can be suppressed.

  In the present embodiment, after the bypass diode device 1 is formed on the auxiliary substrate 22 using the auxiliary substrate 22 such as glass, the auxiliary substrate 22 is peeled from the insulating layer 7 made of a polyimide coat film, and the insulating layer 7 Although the case where the film substrate 6 is bonded together was described, it is not limited to this case. For example, the bypass diode device 1 described above is formed on a metal substrate or film substrate whose surface is covered with an insulating film such as a glass substrate or a resin film, and used as the bypass diode device 1 without peeling off the glass substrate or the like. It may be done. In addition, various modifications can be made without departing from the scope of the present invention.

DESCRIPTION OF SYMBOLS 1 Bypass diode apparatus 2 Support substrate 3 Resin layer 4 Terminal connection part 5a Diode 6 Film material 7 Insulating layer 8, 13 Conductive resin layer 9 Anode electrode layer 10 Semiconductor layer 11 Cathode electrode layer 12 Slit 15 Photovoltaic device 22 Auxiliary substrate 23 24 slits

Claims (5)

A support substrate, a first electrode layer formed on the support substrate, a semiconductor layer covering the first electrode layer, formed on the support substrate, and having a junction region functioning as a diode; A second electrode layer partially opposed to the first electrode layer and formed on the semiconductor layer; a slit opening the first electrode layer, the semiconductor layer, and the second electrode layer; A first conductive resin layer embedded in the slit and formed on the second electrode layer; a light-blocking resin layer formed on the semiconductor layer; and an opening region of the light-blocking resin layer. A terminal connection portion electrically connected to the second electrode layer via
The second electrode layer is made of a metal material that transmits light, and the first conductive resin layer formed on the second electrode layer is disposed below the terminal connection portion. And a bypass diode device comprising a branch electrode portion extending like a comb from the main electrode portion. A second conductive resin layer is disposed between the first electrode layer and the support substrate, and the second conductive resin layer is disposed at least between the slit and the support substrate. The bypass diode device according to claim 1. 3. The bypass diode device according to claim 2, wherein the second electrode layer is formed of zinc oxide, indium tin oxide, tin oxide, or tin-added indium oxide. 4. The bypass diode device according to claim 2, wherein the first and second conductive resin layers are formed of a conductive resin obtained by curing a silver paste. 5. In the measuring method of the bypass diode device according to any one of claims 1 to 4,
Before the first conductive resin layer is formed and the light-shielding resin layer is formed, a measurement terminal of a measuring device is applied to the first conductive resin layer, and measurement is performed from above the first conductive resin layer. A method for measuring a bypass diode device, wherein the characteristics of the semiconductor layer are measured by irradiating the semiconductor layer with the light.

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