JP2013239730A5 - Optical semiconductor device manufacturing method and optical semiconductor device - Google Patents

Optical semiconductor device manufacturing method and optical semiconductor device Download PDF

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JP2013239730A5
JP2013239730A5 JP2013147204A JP2013147204A JP2013239730A5 JP 2013239730 A5 JP2013239730 A5 JP 2013239730A5 JP 2013147204 A JP2013147204 A JP 2013147204A JP 2013147204 A JP2013147204 A JP 2013147204A JP 2013239730 A5 JP2013239730 A5 JP 2013239730A5
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本発明の実施形態は、光半導体装置の製造方法及び光半導体装置に関する。   Embodiments described herein relate generally to an optical semiconductor device manufacturing method and an optical semiconductor device.

本発明の実施形態は、低コストで大量生産が可能であり、半導体発光素子と同程度に小型化することも可能な光半導体装置の製造方法及び光半導体装置を提供する。   Embodiments of the present invention provide an optical semiconductor device manufacturing method and an optical semiconductor device that can be mass-produced at low cost and can be downsized to the same extent as a semiconductor light emitting element.

実施形態によれば、基板の上に複数の発光層を形成する工程と、前記発光層を発光させる電流を流すための複数の導電部を前記複数の発光層のそれぞれの上に形成する工程と、前記複数の導電部の間に封止材料を供給して封止層を形成する工程と、前記導電部と前記封止層とを支持体として前記基板を取り除く工程と、を備えたことを特徴とする光半導体装置の製造方法が提供される。   According to the embodiment, a step of forming a plurality of light emitting layers on a substrate, and a step of forming a plurality of conductive parts for flowing a current for causing the light emitting layer to emit light on each of the plurality of light emitting layers, And a step of supplying a sealing material between the plurality of conductive portions to form a sealing layer, and a step of removing the substrate using the conductive portions and the sealing layer as a support. A method for manufacturing an optical semiconductor device is provided.

Claims (55)

基板の上に複数の発光層を形成する工程と、
前記発光層を発光させる電流を流すための複数の導電部を前記複数の発光層のそれぞれの上に形成する工程と、
前記複数の導電部の間に封止材料を供給して封止層を形成する工程と、
前記導電部と前記封止層とを支持体として前記基板を取り除く工程と、
を備えたことを特徴とする光半導体装置の製造方法。 Forming a plurality of light emitting layers on a substrate;
Forming a plurality of conductive portions for flowing a current for causing the light emitting layer to emit light on each of the plurality of light emitting layers;
Supplying a sealing material between the plurality of conductive portions to form a sealing layer;
Removing the substrate using the conductive portion and the sealing layer as a support;
An optical semiconductor device manufacturing method comprising: 前記複数の導電部のそれぞれは、正極と負極のいずれかを含み、
前記基板を取り除く工程の後に、少なくとも前記正極及び負極を含むように個片化を行う工程をさらに備えたことを特徴とする請求項１記載の光半導体装置の製造方法。 Each of the plurality of conductive parts includes either a positive electrode or a negative electrode,
The method of manufacturing an optical semiconductor device according to claim 1, further comprising a step of separating the substrate so as to include at least the positive electrode and the negative electrode after the step of removing the substrate. 前記基板を取り除く工程の後に、隣接する前記発光層の間で個片化する工程をさらに備えたことを特徴とする請求項１記載の光半導体装置の製造方法。   2. The method of manufacturing an optical semiconductor device according to claim 1, further comprising a step of separating the light emitting layers adjacent to each other after the step of removing the substrate. 前記基板を取り除く工程の後に、少なくとも、一つの前記発光層を含むように個片化を行う工程をさらに備えたことを特徴とする請求項１記載の光半導体装置の製造方法。   2. The method of manufacturing an optical semiconductor device according to claim 1, further comprising a step of separating the substrate so as to include at least one light emitting layer after the step of removing the substrate. 前記個片化する工程において、隣接する前記発光層の間をダイサによりダイシングすることを特徴とする請求項２〜４のいずれか１つに記載の光半導体装置の製造方法。   5. The method of manufacturing an optical semiconductor device according to claim 2, wherein in the step of dividing into pieces, dicing is performed between adjacent light emitting layers by a dicer. 前記封止層を形成する工程において、隣接する前記発光層の間を前記封止層が埋めるように前記封止層を形成することを特徴とする請求項１〜５のいずれか１つに記載の光半導体装置の製造方法。   The said sealing layer is formed in the process of forming the said sealing layer, The said sealing layer is formed so that the said sealing layer may fill between the said light emitting layers adjacent. Manufacturing method of the optical semiconductor device. 前記基板を取り除く工程の後に、前記発光層の前記導電部が存在する面とは反対の面側に、前記発光層からの光を透過させる透光層を形成する工程をさらに備えたことを特徴とする請求項１〜６のいずれか１つに記載の光半導体装置の製造方法。   After the step of removing the substrate, the method further comprises a step of forming a light-transmitting layer that transmits light from the light emitting layer on the side of the light emitting layer opposite to the surface on which the conductive portion exists. The manufacturing method of the optical semiconductor device as described in any one of Claims 1-6. 前記透光層は、前記発光層よりもはみ出て形成されることを特徴とする請求項７記載の光半導体装置の製造方法。   8. The method of manufacturing an optical semiconductor device according to claim 7, wherein the light transmitting layer is formed so as to protrude beyond the light emitting layer. 前記透光層は、隣接する前記発光層の間を覆うように形成されることを特徴とする請求項７記載の光半導体装置の製造方法。   8. The method of manufacturing an optical semiconductor device according to claim 7, wherein the light transmissive layer is formed so as to cover between the adjacent light emitting layers. 前記基板を取り除く工程の後であって、前記個片化する工程の前に、前記発光層の前記導電部が存在する面とは反対の面側に、前記発光層からの光を透過させる透光層を形成する工程をさらに備えたことを特徴とする請求項２〜６のいずれか１つに記載の光半導体装置の製造方法。   After the step of removing the substrate and before the step of dividing into pieces, a light transmitting layer that transmits light from the light emitting layer to the surface of the light emitting layer opposite to the surface on which the conductive portion is present. The method for manufacturing an optical semiconductor device according to claim 2, further comprising a step of forming an optical layer. 前記透光層は、隣接する前記発光層の間を覆うように形成されることを特徴とする請求項１０記載の光半導体装置の製造方法。   The method of manufacturing an optical semiconductor device according to claim 10, wherein the light transmitting layer is formed so as to cover between the adjacent light emitting layers. 前記個片化する工程の後に、前記透光層の側面と前記封止層の側面とは面一になっていることを特徴とする請求項１１記載の光半導体装置の製造方法。   12. The method of manufacturing an optical semiconductor device according to claim 11, wherein the side surface of the translucent layer and the side surface of the sealing layer are flush with each other after the step of dividing into pieces. 前記個片化する工程において、前記透光層と前記封止層を一括で切断することを特徴とする請求項７〜１２のいずれか１つに記載の光半導体装置の製造方法。   13. The method of manufacturing an optical semiconductor device according to claim 7, wherein, in the step of dividing into pieces, the light transmitting layer and the sealing layer are cut together. 前記基板を取り除く工程の後に、前記発光層の前記導電部が存在する面とは反対の面側に、蛍光体を含んだ蛍光層を形成する工程をさらに備えたことを特徴とする請求項１〜１３のいずれか１つに記載の光半導体装置の製造方法。   2. The method according to claim 1, further comprising a step of forming a phosphor layer containing a phosphor on the surface of the light emitting layer opposite to the surface where the conductive portion exists after the step of removing the substrate. The manufacturing method of the optical semiconductor device as described in any one of -13. 前記蛍光層は、前記発光層よりもはみ出て形成されることを特徴とする請求項１４記載の光半導体装置の製造方法。   15. The method of manufacturing an optical semiconductor device according to claim 14, wherein the fluorescent layer is formed so as to protrude beyond the light emitting layer. 前記蛍光層は、隣接する前記発光層の間を覆うように形成されることを特徴とする請求項１４記載の光半導体装置の製造方法。   15. The method of manufacturing an optical semiconductor device according to claim 14, wherein the fluorescent layer is formed so as to cover between the adjacent light emitting layers. 前記蛍光層は、前記封止層よりも厚さが薄いことを特徴とする請求項１４〜１６のいずれか１つに記載の光半導体装置の製造方法。   The method of manufacturing an optical semiconductor device according to claim 14, wherein the fluorescent layer is thinner than the sealing layer. 前記基板を取り除く工程の後に、前記発光層の前記導電部が存在する面とは反対の面側に、蛍光体を含んだ蛍光層を形成する工程をさらに備えたことを特徴とする請求項２〜５のいずれか１つに記載の光半導体装置の製造方法。   3. The method according to claim 2, further comprising a step of forming a phosphor layer containing a phosphor on the surface of the light emitting layer opposite to the surface where the conductive portion exists after the step of removing the substrate. The manufacturing method of the optical semiconductor device as described in any one of -5. 前記蛍光層は、隣接する前記発光層の間を覆うように形成されることを特徴とする請求項１８記載の光半導体装置の製造方法。   19. The method of manufacturing an optical semiconductor device according to claim 18, wherein the fluorescent layer is formed so as to cover between the adjacent light emitting layers. 前記個片化する工程の後、前記蛍光層の側面と前記封止層の側面とは面一になっていることを特徴とする請求項１８または１９に記載の光半導体装置の製造方法。   20. The method of manufacturing an optical semiconductor device according to claim 18, wherein the side surface of the fluorescent layer and the side surface of the sealing layer are flush with each other after the step of dividing into individual pieces. 前記個片化する工程において、前記蛍光層と前記封止層とを一括で切断することを特徴とする請求項１８〜２０のいずれか１つに記載の光半導体装置の製造方法。   21. The method of manufacturing an optical semiconductor device according to claim 18, wherein the fluorescent layer and the sealing layer are collectively cut in the dividing step. 前記個片化する工程において、前記蛍光層の少なくとも一部分と前記封止層の少なくとも一部分とを一括で切断することを特徴とする請求項１８〜２０のいずれか１つに記載の光半導体装置の製造方法。   21. The optical semiconductor device according to claim 18, wherein in the step of dividing into pieces, at least a part of the fluorescent layer and at least a part of the sealing layer are collectively cut. Production method. 前記導電部は、金属で形成されることを特徴とする請求項１〜２２のいずれか１つに記載の光半導体装置の製造方法。   The method for manufacturing an optical semiconductor device according to claim 1, wherein the conductive portion is made of a metal. 前記複数の導電部のそれぞれは、電極、再配線層及びピラーのうち少なくとも一つを含むことを特徴とする請求項１〜２３のいずれか１つに記載の光半導体装置の製造方法。   24. The method of manufacturing an optical semiconductor device according to claim 1, wherein each of the plurality of conductive portions includes at least one of an electrode, a redistribution layer, and a pillar. 前記封止材料は、樹脂を含むことを特徴とする請求項１〜２４のいずれか１つに記載の光半導体装置の製造方法。   The method for manufacturing an optical semiconductor device according to claim 1, wherein the sealing material includes a resin. 前記封止材料は、熱硬化性樹脂を含むことを特徴とする請求項１〜２５のいずれか１つに記載の光半導体装置の製造方法。   The method for manufacturing an optical semiconductor device according to claim 1, wherein the sealing material includes a thermosetting resin. 前記封止層は、複数の前記発光層と、複数の前記導電部と、を連続して封止するように形成されることを特徴とする請求項１〜２６のいずれか１つに記載の光半導体装置の製造方法。   27. The sealing layer according to any one of claims 1 to 26, wherein the sealing layer is formed so as to continuously seal the plurality of light emitting layers and the plurality of conductive portions. Manufacturing method of optical semiconductor device. 前記封止層は、前記発光層と、前記導電部と、を覆うように形成されることを特徴とする請求項１〜２６のいずれか１つに記載の光半導体装置の製造方法。   27. The method of manufacturing an optical semiconductor device according to claim 1, wherein the sealing layer is formed so as to cover the light emitting layer and the conductive portion. 前記封止層から前記導電部の端面を露出させる工程をさらに備えたことを特徴とする請求項１〜２８のいずれか１つに記載の光半導体装置の製造方法。   The method of manufacturing an optical semiconductor device according to claim 1, further comprising a step of exposing an end face of the conductive portion from the sealing layer. 前記露出した端面に金属層を形成する工程をさらに備えたことを特徴とする請求項２９記載の光半導体装置の製造方法。   30. The method of manufacturing an optical semiconductor device according to claim 29, further comprising a step of forming a metal layer on the exposed end face. 基板と、前記基板の上に設けられた複数の発光層と、前記複数の発光層のそれぞれの上に設けられ前記発光層を発光させる電流を流すための複数の導電部と、前記導電部の間に設けられた封止層と、を含む積層構造を形成する工程と、
前記導電部と前記封止層とにより前記発光層を支持しつつ前記基板を取り除く工程と、
を備えたことを特徴とする光半導体装置の製造方法。 A substrate, a plurality of light emitting layers provided on the substrate, a plurality of conductive portions provided on each of the plurality of light emitting layers for passing a current that causes the light emitting layers to emit light, and A step of forming a laminated structure including a sealing layer provided therebetween,
Removing the substrate while supporting the light emitting layer with the conductive portion and the sealing layer;
An optical semiconductor device manufacturing method comprising: 基板の上に発光層を形成する工程と、
前記発光層を発光させる電流を流すための複数の導電部を前記発光層の上に形成する工程と、
前記複数の導電部の間に樹脂を含む材料を供給して封止層を形成する工程と、
前記導電部と前記封止層とを支持体として前記基板を取り除く工程と、
を備えたことを特徴とする光半導体装置の製造方法。 Forming a light emitting layer on the substrate;
Forming a plurality of conductive portions on the light emitting layer for passing a current for causing the light emitting layer to emit light;
Supplying a material containing a resin between the plurality of conductive portions to form a sealing layer;
Removing the substrate using the conductive portion and the sealing layer as a support;
An optical semiconductor device manufacturing method comprising: 基板と、前記基板の上に設けられた発光層と、前記発光層の上に設けられ前記発光層を発光させる電流を流すための複数の導電部と、前記導電部の間に設けられた封止層と、を含む積層構造を形成する工程と、
前記導電部と前記封止層とにより前記発光層を支持しつつ前記基板を取り除く工程と、
を備えたことを特徴とする光半導体装置の製造方法。 A substrate, a light-emitting layer provided on the substrate, a plurality of conductive portions provided on the light-emitting layer for passing a current that emits light from the light-emitting layer, and a seal provided between the conductive portions A step of forming a laminated structure including a stop layer;
Removing the substrate while supporting the light emitting layer with the conductive portion and the sealing layer;
An optical semiconductor device manufacturing method comprising: 複数の発光層と、
前記発光層上に設けられ前記発光層を発光させる電流を流すための複数の導電部と、
前記導電部の間に設けられた封止層と、
を備え
前記導電部と前記封止層とを支持体として基板が取り除かれたことを特徴とする光半導体装置。 A plurality of light emitting layers;
A plurality of conductive portions provided on the light emitting layer for flowing a current for causing the light emitting layer to emit light;
A sealing layer provided between the conductive portions;
An optical semiconductor device, wherein the substrate is removed using the conductive portion and the sealing layer as a support. 隣接する前記発光層の間を前記封止層が埋めるように設けられていることを特徴とする請求項３４記載の光半導体装置。   35. The optical semiconductor device according to claim 34, wherein the sealing layer is provided so as to fill a space between the adjacent light emitting layers. 前記発光層の前記導電部が存在する面とは反対の面側に設けられ、前記発光層からの光を透過させる透光層をさらに備えたことを特徴とする請求項３４または３５に記載の光半導体装置。   36. The light-emitting layer according to claim 34, further comprising a light-transmitting layer that is provided on a surface opposite to the surface on which the conductive portion is present and transmits light from the light-emitting layer. Optical semiconductor device. 前記透光層は、前記発光層よりもはみ出していることを特徴とする請求項３６記載の光半導体装置。   37. The optical semiconductor device according to claim 36, wherein the light transmitting layer protrudes beyond the light emitting layer. 前記透光層は、隣接する前記発光層の間を覆うように形成されていることを特徴とする請求項３６記載の光半導体装置。   37. The optical semiconductor device according to claim 36, wherein the translucent layer is formed so as to cover between the adjacent light emitting layers. 前記透光層の側面と前記封止層の側面とは、面一になっていることを特徴とする請求項３６記載の光半導体装置。   37. The optical semiconductor device according to claim 36, wherein a side surface of the light transmitting layer and a side surface of the sealing layer are flush with each other. 前記発光層の前記導電部が存在する面とは反対の面側に設けられ、蛍光体を含んだ蛍光層をさらに備えたことを特徴とする請求項３４または３５に記載の光半導体装置。   36. The optical semiconductor device according to claim 34, further comprising a fluorescent layer provided on a surface opposite to the surface on which the conductive portion of the light emitting layer is present, and including a fluorescent material. 前記蛍光層は、前記発光層よりもはみ出していることを特徴とする請求項４０記載の光半導体装置。   41. The optical semiconductor device according to claim 40, wherein the fluorescent layer protrudes beyond the light emitting layer. 前記蛍光層は、隣接する前記発光層の間を覆うように形成されていることを特徴とする請求項４０記載の光半導体装置。   41. The optical semiconductor device according to claim 40, wherein the fluorescent layer is formed to cover between the adjacent light emitting layers. 前記蛍光層の側面と前記封止層の側面とは、面一になっていることを特徴とする請求項４０記載の光半導体装置。   41. The optical semiconductor device according to claim 40, wherein a side surface of the fluorescent layer and a side surface of the sealing layer are flush with each other. 前記蛍光層は、前記封止層よりも厚さが薄いことを特徴とする請求項４０〜４３のいずれか１つに記載の光半導体装置。   44. The optical semiconductor device according to claim 40, wherein the fluorescent layer is thinner than the sealing layer. 前記導電部は、金属で形成されていることを特徴とする請求項３４〜４４のいずれか１つに記載の光半導体装置。   45. The optical semiconductor device according to claim 34, wherein the conductive portion is made of metal. 前記複数の導電部のそれぞれは、電極、再配線層及びピラーのうち少なくとも一つを含むことを特徴とする請求項３４〜４５のいずれか１つに記載の光半導体装置。   46. The optical semiconductor device according to claim 34, wherein each of the plurality of conductive portions includes at least one of an electrode, a redistribution layer, and a pillar. 前記封止層は、樹脂材料を含むことを特徴とする請求項３４〜４６のいずれか１つに記載の光半導体装置。   47. The optical semiconductor device according to claim 34, wherein the sealing layer includes a resin material. 前記封止層は、熱硬化性樹脂を含むことを特徴とする請求項３４〜４７のいずれか１つに記載の光半導体装置。   48. The optical semiconductor device according to claim 34, wherein the sealing layer includes a thermosetting resin. 前記封止層は、複数の前記発光層と、複数の前記導電部と、を連続して封止するように形成されていることを特徴とする請求項３４〜４８のいずれか１つに記載の光半導体装置。   49. The sealing layer according to any one of claims 34 to 48, wherein the sealing layer is formed so as to continuously seal the plurality of light emitting layers and the plurality of conductive portions. Optical semiconductor device. 前記封止層は、前記発光層と、前記導電部と、を覆うように形成されていることを特徴とする請求項３４〜４９のいずれか１つに記載の光半導体装置。   50. The optical semiconductor device according to claim 34, wherein the sealing layer is formed so as to cover the light emitting layer and the conductive portion. 前記導電部の端面は、前記封止層から露出していることを特徴とする請求項３４〜５０のいずれか１つに記載の光半導体装置。   51. The optical semiconductor device according to claim 34, wherein an end surface of the conductive portion is exposed from the sealing layer. 前記露出した端面に設けられた金属層をさらに備えたことを特徴とする請求項５１記載の光半導体装置。   52. The optical semiconductor device according to claim 51, further comprising a metal layer provided on the exposed end face. 支持基板を用いずに基板が取り除かれた光半導体装置であって、
複数の発光層と、
前記発光層の上に設けられ前記発光層を発光させる電流を流すための複数の導電部と、
前記導電部の間に設けられた封止層と、
を備えたことを特徴とする光半導体装置。 An optical semiconductor device in which a substrate is removed without using a support substrate,
A plurality of light emitting layers;
A plurality of conductive portions provided on the light emitting layer for flowing a current for causing the light emitting layer to emit light;
A sealing layer provided between the conductive portions;
An optical semiconductor device comprising: 発光層と、
前記発光層上に設けられ前記発光層を発光させる電流を流すための複数の導電部と、
前記導電部の間に設けられた封止層と、
を備え、
前記導電部と前記封止層とを支持体として基板が取り除かれたことを特徴とする光半導体装置。 A light emitting layer;
A plurality of conductive portions provided on the light emitting layer for flowing a current for causing the light emitting layer to emit light;
A sealing layer provided between the conductive portions;
With
An optical semiconductor device, wherein the substrate is removed using the conductive portion and the sealing layer as a support. 支持基板を用いずに基板が取り除かれた光半導体装置であって、
発光層と、
前記発光層上に設けられ前記発光層を発光させる電流を流すための複数の導電部と、
前記導電部の間に設けられた封止層と、
を備えたことを特徴とする光半導体装置。 An optical semiconductor device in which a substrate is removed without using a support substrate,
A light emitting layer;
A plurality of conductive portions provided on the light emitting layer for flowing a current for causing the light emitting layer to emit light;
A sealing layer provided between the conductive portions;
An optical semiconductor device comprising:
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