JP2013239592A - Light source device, method for manufacturing light source device, and image formation device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light source device in which a conductive part can be prevented from protruding, and a method for manufacturing a light source device.SOLUTION: A light source device 1 includes: a light emitting element including an emitter face emitting light emitted from an element, an optical waveguide guiding the light to the emitter face, and an electrode; a support substrate including a wiring part; a silicone-containing molecular bonding film bonding the light emitting element and the support substrate; and a conductive part electrically connecting the wiring part and the electrode and formed of a conductive paste. The light source device 1 has a groove formed by blocking the end part on the emitter face side through the extension of the silicone-containing molecular bonding film, and the conductive part is provided in the groove.

Description

  The present invention relates to a light source device, a method for manufacturing the light source device, and an image forming apparatus.

  A light source device having a light emitting element such as a semiconductor laser is known. The light source device includes a support substrate having a wiring portion, an emitter surface provided on the support substrate, emitting light, an optical waveguide that generates light and guides the light to the emitter surface, and light emission having electrodes. Element (see, for example, Patent Document 1). Further, when the support substrate and the light emitting element are bonded, the wiring portion of the support substrate and the electrode of the light emitting element are electrically connected by a conductive portion formed of silver paste, solder, or the like.

By the way, the wiring part may be formed by silver paste or the like so as to correspond to the pattern of the optical waveguide. This wiring portion extends to the vicinity of the emitter surface of the light emitting element.
Further, since the light emitting element is easily affected by heat, a cooling means for cooling the light emitting element is provided below the support substrate. In order to enhance the cooling effect, the emitter surface is arranged below, that is, in the vicinity of the support substrate.

However, in such a conventional light source device, when the support substrate and the light emitting element are bonded, the silver paste may protrude from the end on the emitter surface side. And since the emitter surface is located in the vicinity of the support substrate, there is a problem that the protruding silver paste covers part or all of the emitter surface.
Further, between the support substrate and the light emitting element, the silver paste protrudes from a region where the conductive portion is to be formed, and the protruding silver paste may cause a problem such as a short circuit.

JP 2007-27572 A

  An object of the present invention is to provide a light source device, a method of manufacturing the light source device, and an image forming apparatus that can prevent the conductive portion from protruding.

Such an object is achieved by the present invention described below.
A light source device of the present invention includes an emitter surface that emits light emitted from the element, a light guide that guides the light to the emitter surface, and an electrode;
A support substrate having a wiring portion;
A silicone-containing molecular bonding film for bonding the light emitting element and the support substrate;
Electrically connecting the wiring part and the electrode, and comprising a conductive part formed of a conductive paste,
The extension of the silicone-containing molecular bonding film has a groove whose end on the emitter surface side is closed,
The conductive portion is provided in the groove.

Thereby, when the light emitting element and the support substrate are bonded via the silicone-containing molecular bonding film, it is possible to prevent the conductive paste from protruding due to the wall portion that forms the groove of the silicone-containing molecular bonding film. it can. Thereby, it is possible to prevent the conductive paste from covering the emitter surface of the light emitting element, and it is possible to prevent a short circuit of the circuit due to the conductive paste.
Further, since the silicone-containing molecular bonding film also serves as the wall portion, the configuration can be simplified as compared with the case where a dedicated wall portion is provided.

In the light source device of the present invention, the silicone-containing molecular bonding film formed on the support substrate and having a bonding surface for bonding the light emitting element and the support substrate, and the silicone-containing molecular bonding film are the support substrate. It is preferable that the groove is formed on the conductive portion filled with the conductive paste, and the light emitting element and the support substrate are bonded to each other.
Thereby, when a light emitting element and a support substrate are joined via a silicone containing molecular junction film, it can prevent more reliably that a conductive paste protrudes.

The light source device of the present invention preferably has the silicone-containing molecular bonding film that exhibits adhesiveness by applying energy.
Thereby, a light emitting element and a support substrate can be joined more firmly.
In the light source device of the present invention, the silicone-containing molecular bonding film has a unit structure represented by a chemical formula “R—Si—X ₃ ” at a branch portion, and a chemical formula “R ₂ —Si—X ₂ ” at a connecting portion. And having a branched polyorganosiloxane skeleton having a unit structure represented by the chemical formula “R ₃ —Si—X” at the terminal portion.
[Wherein, each R independently represents a methyl group, a phenyl group or a hydroxyl group, and X represents a siloxane residue. ]
Thereby, the silicone-containing molecular bonding film exhibits particularly excellent film strength, and the light-emitting element and the support substrate can be bonded more firmly.

In the light source device of the present invention, it is preferable that the emitter surface is disposed closer to the support substrate than the center of the side surface of the light emitting element.
Thereby, when the cooling means is provided on the side of the support substrate opposite to the light emitting element, the optical waveguide and the emitter surface can be more reliably cooled by the cooling means.
In the light source device according to the aspect of the invention, it is preferable that the light source device includes a cooling unit that is provided on the opposite side of the support substrate from the light emitting element and cools the light emitting element through the support substrate.
Accordingly, the light emitting element can be cooled, and thereby the light emitting element can emit light efficiently.

In the light source device of the present invention, it is preferable that at least a part of the groove is provided along the optical waveguide.
Thereby, a conductive part can be easily and reliably formed along the optical waveguide.
In the light source device of the present invention, it is preferable that at least a part of the groove has a region not covered with the silicone-containing molecular bonding film.
Thereby, a groove | channel can be easily formed in a silicone containing molecular junction film.

A light source device manufacturing method of the present invention includes an emitter surface that emits light emitted from an element, an optical waveguide that guides the light to the emitter surface, and a light emitting element having an electrode;
A support substrate having a wiring portion;
A silicone-containing molecular bonding film for bonding the light emitting element and the support substrate;
A method of manufacturing a light source device comprising a conductive portion that electrically connects the wiring portion and the electrode,
Forming the wiring part on the support substrate;
Forming the silicone-containing molecular bonding film on the support substrate;
Forming a groove whose end is closed at a portion where the conductive part of the silicone-containing molecular bonding film is formed;
Providing energy to the silicone-containing molecular bonding film to develop adhesiveness on and near the surface of the silicone-containing molecular bonding film, and supplying a conductive paste into the groove;
The light emitting element is disposed on the support substrate through the silicone-containing molecular bonding film so that the end of the groove is located on the emitter surface side, heated, and the conductive portion is removed from the conductive paste. Forming and electrically connecting the wiring part and the electrode by the conductive part, and joining the light emitting element and the support substrate through the silicone-containing molecular bonding film. To do.

Thereby, when the light emitting element and the support substrate are bonded via the silicone-containing molecular bonding film, it is possible to prevent the conductive paste from protruding due to the wall portion that forms the groove of the silicone-containing molecular bonding film. it can. Thereby, it is possible to prevent the conductive paste from covering the emitter surface of the light emitting element, and it is possible to prevent a short circuit of the circuit due to the conductive paste.
Further, since the silicone-containing molecular bonding film also serves as the wall portion, the manufacturing process can be reduced and the configuration can be simplified as compared with the case where a dedicated wall portion is provided.
The image forming apparatus of the present invention includes the light source device of the present invention.
Thereby, an image forming apparatus having the effects of the present invention can be provided.

It is a perspective view which shows 1st Embodiment of the light source device of this invention. It is sectional drawing in the AA of the light source device shown in FIG. It is sectional drawing in the BB line of the light emitting element of the light source device shown in FIG. It is a perspective view which shows the support substrate of the light source device shown in FIG. 1, the optical waveguide of a light emitting element, and a joining film. It is sectional drawing for demonstrating the manufacturing method of the light source device shown in FIG. It is sectional drawing for demonstrating the manufacturing method of the light source device shown in FIG. It is a top view which shows 2nd Embodiment of the light source device of this invention. 1 is a diagram schematically illustrating an embodiment in which an image forming apparatus of the present invention is applied to a projector.

Hereinafter, a light source device, a method for manufacturing the light source device, and an image forming apparatus of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
<First Embodiment>
1 is a perspective view showing a first embodiment of the light source device of the present invention, FIG. 2 is a cross-sectional view of the light source device shown in FIG. 1 taken along line AA, and FIG. 3 is a diagram of the light source device shown in FIG. FIG. 4 is a perspective view showing the support substrate of the light source device shown in FIG. 1, the optical waveguide of the light emitting element, and the bonding film, and FIGS. 5 and 6 show FIG. It is sectional drawing for demonstrating the manufacturing method of a light source device.

1 to 6, the left side is “left”, the right side is “right”, the upper side is “upper”, and the lower side is “lower”. In FIG. 1, the optical waveguide 39 of the light emitting element 3 is indicated by a broken line. In FIG. 1, illustration of the electrode 38 of the light emitting element 3, the wiring portion of the support substrate 2, the prism 41, the lens 42, and the like is omitted.
As shown in FIGS. 1 and 2, the light source device 1 includes a support substrate 2, a light emitting element 3 provided on the support substrate 2, and a support substrate 2, that is, on the opposite side of the support substrate 2 from the light emitting element 3. And a cooling means 8 for cooling the light emitting element 3 through the support substrate 2. A bonding film 7 having a bonding surface for bonding the light emitting element 3 and the support substrate 2 is interposed between the light emitting element 3 and the support substrate 2, and the light emitting element 3 and the support substrate are provided by the bonding film 7. 2 are joined. As the bonding film 7, a silicone-containing molecular bonding film is used. The bonding film 7 will be described later in detail.

  First, the light emitting element 3 will be described. In the present embodiment, a case where an InGaAlP-based (red) super luminescent diode (hereinafter also referred to as “SLD”) is typically used as the light-emitting element 3 will be described. Unlike a semiconductor laser, an SLD can prevent laser oscillation by suppressing the formation of a resonator due to end face reflection. Therefore, speckle noise can be reduced.

2 and 3, the light-emitting element 3 includes an electrode 37, an insulating layer 36, a contact layer 35, a cladding layer 34, an active layer 33, a cladding layer 32, a substrate 31, and an electrode 38. Have a laminated body laminated toward the upper side in FIG. The light emitting element 3 includes an electrode 37.
As the substrate 31, for example, a first conductivity type (eg, n-type) GaAs substrate or the like can be used.

The clad layer 32 is formed under the substrate 31. For example, an n-type AlGaInP layer can be used as the cladding layer 32. A buffer layer (not shown) may be formed between the substrate 31 and the cladding layer 32. As the buffer layer, for example, an n-type GaAs layer, an InGaP layer, or the like can be used.
The active layer 33 is formed under the cladding layer 32. The active layer 33 is provided on the support substrate 2 side in the light emitting element 3. That is, the active layer 33 is provided below the middle of the light emitting element 3 in the thickness direction (on the side opposite to the substrate 31 side). Thereby, emitter surfaces 301 a and 301 b, which will be described later, that emit light are arranged closer to the support substrate 2 than the center of the side surface of the light emitting element 3. Thereby, the optical waveguide 39 and the emitter surfaces 301a and 301b of the light emitting element 3 can be more reliably cooled by the cooling means 8. Thereby, the light emitting element 3 can emit light efficiently.

The active layer 33 is sandwiched between the clad layer 32 and the clad layer 34. The active layer 33 has, for example, a multiple quantum well (MQW) structure in which three quantum well structures each composed of an InGaP well layer and an InGaAlP barrier layer are stacked. That is, the active layer 33 sandwiched between the clad layer 32 and the clad layer 34 constitutes a laminated structure, for example.
The shape of the active layer 33 is, for example, a rectangular parallelepiped (including a cube) in the illustrated configuration.

A part of the active layer 33 constitutes a gain region 331 that becomes a current path of the active layer 33. The gain region 331 can generate light, and this light can receive gain in the gain region 331.
In this embodiment, the shape of the gain region 331 is a shape obtained by removing one side of a rectangle (including a square) when viewed in a plan view, that is, from the stacking direction of the light-emitting elements 3 (hereinafter referred to as “U-shape”) In other words, it has a shape formed by bending a straight line 90 ° twice in the same direction. The shape of the gain region 331 is also the shape of the optical waveguide 39 described later.

In addition, one gain region 331 is provided in the present embodiment. Note that the number of gain regions 331 is not limited to this, and may be two or more, for example.
The clad layer 34 is formed under the active layer 33. As the clad layer 34, for example, a second conductivity type (for example, p-type) AlGaInP layer or the like can be used.
For example, the p-type cladding layer 34, the active layer 33 not doped with impurities, and the n-type cladding layer 32 constitute a pin diode. Each of the cladding layer 32 and the cladding layer 34 is a layer having a larger forbidden band width and a smaller refractive index than the active layer 33. The active layer 33 has a function of amplifying light. The clad layer 34 and the clad layer 32 have a function of confining injected carriers (electrons and holes) and light with the active layer 33 interposed therebetween.

The contact layer 35 is formed under the cladding layer 34. As the contact layer 35, a layer in ohmic contact with the electrode 37 can be used. The contact layer 35 is made of, for example, a second conductivity type semiconductor. As the contact layer 35, for example, a p-type GaAs layer can be used.
The insulating layer 36 is formed under the contact layer 35 other than below the gain region 331. That is, the insulating layer 36 has an opening below the gain region 331, and the surface of the contact layer 35 is exposed in the opening. As the insulating layer 36, for example, a SiN layer, Si
An O ₂ layer, a polyimide layer, or the like can be used.

  The electrode 37 is formed under the exposed contact layer 35. The electrode 37 is electrically connected to the cladding layer 34 via the contact layer 35. The electrode 37 is one electrode for driving the light emitting element 3. As the electrode 37, for example, a stacked body in which a Cr layer, an AuZn layer, and an Au layer are stacked in this order from the contact layer 35 side can be used. The shape of the electrode 37, that is, the shape of the contact portion between the electrode 37 and the contact layer 35 is the same as that of the gain region 331 in a plan view, that is, a shape formed by removing one side of the rectangle. The shape of the contact portion between the electrode 37 and the contact layer 35 determines the current path between the electrodes 37 and 38. As a result, the shape of the gain region 331 in plan view is determined.

  The electrode 38 is formed on the substrate 31. The electrode 38 can be in contact with a layer (substrate 31 in the illustrated example) that is in ohmic contact with the electrode 38. The electrode 38 is electrically connected to the cladding layer 32 via the substrate 31. The electrode 38 is the other electrode for driving the light emitting element 3. As the electrode 38, for example, a stacked body in which a Cr layer, an AuGe layer, a Ni layer, and an Au layer are stacked in this order from the substrate 31 side can be used. The shape of the electrode 38 is the same as that of the gain region 331 in plan view, that is, a shape formed by removing one side of the rectangle. Further, the electrode 38 is disposed so as to overlap the gain region 331 in plan view. A second contact layer (not shown) is provided between the clad layer 32 and the substrate 31, the clad layer 32 side of the second contact layer is exposed by dry etching or the like, and an electrode 38 is provided below the second contact layer. You can also. Thereby, a single-sided electrode structure can be obtained. For example, an n-type GaAs layer can be used as the second contact layer.

Needless to say, the electrode 37 and the electrode 38 may be formed on the entire surface.
The light emitting element 3 further includes a window portion 30 having light transparency. As shown in FIG. 2, the window portion 30 includes the electrode 37, the insulating layer 36, the contact layer 35, the cladding layer 34, the active layer 33, the cladding layer 32, the substrate 31, and the electrode 38. 2 is formed on the right side in FIG. 2, that is, on the light emission side. As this window part 30, a ZnO layer etc. can be used, for example.

  In the light emitting element 3, when a forward bias voltage of a pin diode is applied between the electrode 37 and the electrode 38, recombination of electrons and holes occurs in the gain region 331 of the active layer 33. This recombination causes light emission. Starting from this generated light, stimulated emission occurs in a chain, and the light travels in the gain region 331, during which the light intensity is amplified and enters the window 30 from one end face of the gain region 331, The light is emitted from the surface of the portion corresponding to the one end face of the gain region 331 of the window 30, that is, from the emitter face (outgoing face) 301 a. Similarly, the light enters the window portion 30 from the other end face of the gain region 331, and the surface of the portion corresponding to the other end face of the gain region 331 of the window portion 30, that is, an emitter surface (outgoing surface). It exits from 301b.

The gain region 331 of the active layer 33 and the portions corresponding to the gain regions 331 of the cladding layers 32 and 34 form an optical waveguide 39 that generates light and guides the light to the emitter surface.
As shown in FIGS. 1 and 2, the support substrate 2 includes a substrate body 20 and a wiring portion 21 formed on the substrate body 20.

Grooves 201 are formed in the vicinity of the emitter surfaces 301 a and 301 b of the light emitting element 3 of the substrate body 20. The light source device 1 has two prisms 41 and two lenses that collect light, and the prisms 41 are inserted in positions corresponding to the emitter surfaces 301a and 301b in the groove 201, respectively. A lens 42 is provided above each prism 41.
Thereby, the light emitted from the emitter surfaces 301 a and 301 b is bent upward by the corresponding prism 41 and condensed by the corresponding lens 42.

  The constituent material of the substrate body 20 is not particularly limited. For example, a semiconductor such as Si, Cu, Al, Mo, W, Si, C, Be, Au, or a compound thereof (for example, AlN, BeO). Or an alloy (for example, CuMo). Moreover, the support substrate 2 can also be comprised with what combined these illustrations, for example, the laminated body of a copper (Cu) layer and a molybdenum (Mo) layer.

Moreover, it does not specifically limit as a constituent material of the wiring part 21, For example, Cu, its alloy, etc. can be used.
As shown in FIGS. 2 and 4, the light source device 1 includes a conductive portion 6 that electrically connects the wiring portion 21 and the electrode 37 and is formed of a conductive paste.
In the present embodiment, the conductive portion 6 has the same shape as that of the gain region 331 in a plan view, that is, a shape formed by removing one side of the rectangle. The conductive portion 6 is disposed so as to overlap with the gain region 331 in plan view. That is, the conductive portion 6 is provided along the optical waveguide 39.

In addition, it does not specifically limit as a conductive paste which forms the electroconductive part 6, For example, a silver paste etc. can be used.
The bonding film 7 has a groove 71. In this case, at least a part of the groove 71 may have a region that the bonding film 7 does not cover. That is, the groove 71 may be bottomless or bottomed, but is bottomless in this embodiment. Thereby, the groove 71 can be easily formed in the bonding film 7.

Further, the groove 71 is formed at least at a site where the conductive portion 6 of the support substrate 2 is formed. In the present embodiment, the groove 71 is formed along the optical waveguide 39 and extends to the vicinity of the emitter surfaces 301a and 301b, and the end portions on the emitter surfaces 301a and 301b side are closed. Note that each end of the groove 71 is closed.
The conductive portion 6 is formed in the groove 71. In this case, as will be described later, the bonding film 7 is formed on the support substrate 2 before the light emitting element 3 and the support substrate 2 are bonded, and the conductive portion 6 is supported by the light emitting element 3 and the support substrate 2. Before the substrate 2 is bonded, the conductive paste is formed in the groove 71 on the support substrate 2. The bonding film 7 and the light emitting element 3 are bonded to each other by the adhesiveness developed on the surface of the bonding film 7 and in the vicinity of the surface by applying energy to the bonding film 7 formed on the support substrate 2.

  Thereby, when the light emitting element 3 and the support substrate 2 are bonded via the bonding film 7, it is possible to prevent the conductive paste from protruding due to the wall portion that forms the groove 71 of the bonding film 7. . Thus, it is possible to prevent the conductive paste from covering the emitter surfaces 301a and 301b of the light emitting element 3, and it is possible to prevent a short circuit of the circuit due to the conductive paste.

Further, since the bonding film 7 also serves as the wall portion, the configuration can be simplified and the manufacturing process can be reduced as compared with the case where a dedicated wall portion is provided.
Further, as described above, the light source device 1 includes the cooling unit 8 that is provided under the support substrate 2, that is, on the opposite side of the support substrate 2 from the light emitting element 3, and cools the light emitting element 3 through the support substrate 2. ing. Thereby, heat generation of the light emitting element 3 can be prevented or suppressed, and the light emitting element 3 can emit light efficiently.
The cooling means 8 is not particularly limited, and examples thereof include a heat sink, a blower, a water-cooled cooling device, and a Peltier element.

Next, an example of a method for manufacturing the light source device 1 will be described.
First, the substrate body 20 of the support substrate 2 and the light emitting element 3 are prepared. As the substrate body 20, for example, a Si substrate or the like can be used.
Next, as shown in FIG. 5A, the upper surface of the substrate body 20 is heated to form an oxide film 23 on the upper surface of the substrate body 20.

Next, as shown in FIG. 5B, a base film 51 for electrolytic plating is formed on the upper surface of the oxide film 23. As the base film 51, for example, a stacked body in which a TiW layer and a Cu layer are stacked in this order from the oxide film 23 side can be used.
Next, as shown in FIG. 5C, a resist film 52 is formed on the upper surface of the base film 51, and the resist film 52 in a region where the wiring part 21 is formed on the upper surface of the base film 51 is removed. That is, the resist film 52 is patterned so as to cover a region other than the region where the wiring portion 21 is formed on the upper surface of the base film 51.

Next, as shown in FIG. 5D, electroplating is performed using the resist film 52 as a mask to form the wiring part 21 on the base film 51.
Next, as shown in FIG. 5E, the resist film 52 is removed. Further, a region of the base film 51 where the wiring portion 21 is not formed on the upper surface thereof is etched. Thereby, the support substrate 2 is obtained.

As an etching method, for example, one or more of physical etching methods such as plasma etching, reactive ion etching, beam etching, and light-assisted etching, and chemical etching methods such as wet etching are used in combination. be able to.
Next, as shown in FIG. 5 (f), a liquid material containing a silicone material that is a constituent material of the bonding film 7 is formed on the upper surface of the support substrate 2, that is, on the upper surface of the oxide film 23 and the upper surface of the wiring portion 21. Supply and form a liquid film.

Examples of the method for applying the liquid material include an immersion method, a droplet discharge method (for example, an ink jet method), a spin coating method, a doctor blade method, a bar coating method, a brush coating method, and the like. Species or a combination of two or more can be used.
This liquid material contains a silicone material. However, when the silicone material alone is liquid and has a desired viscosity range, the silicone material can be used as it is as a liquid material. When the silicone material alone forms a solid or highly viscous liquid, a solution or dispersion of the silicone material can be used as the liquid material.

  Examples of the solvent or dispersion medium for dissolving or dispersing the silicone material include inorganic solvents such as ammonia, water, hydrogen peroxide, carbon tetrachloride, and ethylene carbonate, and ketone solvents such as methyl ethyl ketone (MEK) and acetone. Alcohol solvents such as methanol, ethanol and isobutanol, ether solvents such as diethyl ether and diisopropyl ether, cellosolve solvents such as methyl cellosolve, aliphatic hydrocarbon solvents such as hexane and pentane, toluene, xylene, benzene, etc. Aromatic hydrocarbon solvents, aromatic heterocyclic compound solvents such as pyridine, pyrazine, furan, amide solvents such as N, N-dimethylformamide (DMF), halogen compound solvents such as dichloromethane and chloroform, ethyl acetate Esters such as methyl acetate Various organic solvents such as solvents, sulfur compound solvents such as dimethyl sulfoxide (DMSO), sulfolane, nitrile solvents such as acetonitrile, propionitrile, acrylonitrile, organic acid solvents such as formic acid, trifluoroacetic acid, or the like A mixed solvent containing can be used.

Further, in the next step, when the liquid film is cured by dehydrating and condensing hydroxyl groups contained in the silicone material, a catalyst for promoting the dehydrating and condensing reaction may be added to the liquid material. Good. The catalyst is not particularly limited. For example, a titanium-based catalyst such as tetrabutyl orthotitanate and tetraisopropyl orthotitanate, an aluminum-based catalyst such as aluminum tris (acetylacetonate), and phosphoric acid, metaphosphoric acid, Examples include phosphoric acid-based catalysts such as polyphosphoric acid.
The silicone material is contained in the liquid material and becomes the main material of the bonding film 7 formed by drying and / or curing the liquid material in the next step.

  In the following, the liquid film (liquid material) provided on the support substrate 2 is dried and / or cured, that is, the silicone material contained in the liquid film (liquid material) is cured and the liquid film ( When the solvent or dispersion medium is contained in the liquid material), drying the liquid film (liquid material) with the solvent removal or dedispersion medium is simply referred to as “drying / curing of the liquid film (liquid material)”. Sometimes.

Here, the “silicone material” is not particularly limited. In the present invention, the “silicone material” includes the main material of the bonding film 7 included in the liquid material and formed by drying and curing the liquid material in the next step. The branched portion has a unit structure represented by the chemical formula “R—Si—X ₃ ”, the connecting portion has a unit structure represented by the chemical formula “R ₂ —Si—X ₂ ”, Those having a branched polyorganosiloxane skeleton having a unit structure represented by the chemical formula “R ₃ —Si—X” in the part are preferably used.
[Wherein, each R independently represents a methyl group, a phenyl group or a hydroxyl group, and X represents a siloxane residue. ]
In the following, the chemical formula “R—Si—X ₃ ” is represented by the general formula (chemical formula) (1), the chemical formula “R ₂ —Si—X ₂ ” is represented by the general formula (chemical formula) (2), and the chemical formula “R ₃ —Si—X”. Is referred to as a general formula (chemical formula) (3).

The siloxane residue is a substituent that is bonded to a silicon atom of an adjacent structural unit through an oxygen atom and forms a siloxane bond. Specifically, it has an —O— (Si) structure (Si is a silicon atom of an adjacent structural unit).
Since the silicone material, that is, the polyorganosiloxane skeleton is thus branched, in the next step, the bonding film 7 is formed so that the branched chains of this compound contained in the liquid material are entangled with each other. Since it is formed, the obtained bonding film 7 is particularly excellent in film strength and light resistance. A silicone material having a trifunctional silicone molecule (chemical formula “R—Si—X ₃ ”) as a basic structural unit is a bifunctional silicone molecule (chemical formula “R ₂ —Si—X ₂ ”) and a monofunctional silicone. It is harder than the molecule (chemical formula “R ₃ —Si—X ₂ ”). Furthermore, a silicone material having a bifunctional silicone molecule as a basic structural unit is harder than a monofunctional silicone molecule.

Further, the silicone material preferably has a molecular weight of 1 × 10 ⁴ or more and 1 × 10 ⁶ or less, more preferably 1 × 10 ⁵ or more and 1 × 10 ⁶ or less. By setting the molecular weight within such a range, the viscosity of the liquid material can be relatively easily set within the above-described range.
In addition, the silicone material has a plurality of silanol groups by forming a unit structure represented by the general formula (2) or the general formula (3) in the compound, that is, at the connecting portion or the terminal portion. . As a result, when the bonding film 7 is obtained by drying and curing the liquid film in the next step [2], the hydroxyl groups contained in the silanol groups remaining in the silicone material are bonded to each other, and the resulting bonding is obtained. The film strength of the film 7 is further improved.

  In addition, as described above, when the support substrate 2 having a hydroxyl group exposed from the bonding surface (surface) is used, the hydroxyl group remaining in the silicone material and the hydroxyl group provided in the support substrate 2 are used. Therefore, the silicone material can be bonded to the support substrate 2 not only by physical bonding but also by chemical bonding. As a result, the bonding film 7 is firmly bonded to the bonding surface of the support substrate 2.

  In the compound, the silicone material has a unit structure represented by the general formula (1), the general formula (2), and the general formula (3), and at least one of R is a phenyl group. Is preferred. Thereby, since the reactivity of a silanol group improves more, the coupling | bonding of the hydroxyl groups which an adjacent silicone material has comes to be performed more smoothly. Further, by adopting a configuration in which the bonding film 7 includes a phenyl group, there is also an advantage that the bonding film 7 to be formed can have higher film strength.

  Furthermore, R which is not a phenyl group in R included in the unit structures represented by the general formula (1), the general formula (2) and the general formula (3) is a methyl group. A compound in which the group R is a methyl group is relatively easily available and inexpensive, and in the subsequent step, energy is applied to the bonding film 7 so that the methyl group is easily cleaved. The bonding film 7 can surely exhibit adhesiveness.

  Further, the silicone material is a material having a relatively high flexibility. Therefore, when the light emitting element 3 is bonded to the support substrate 2 via the bonding film 7 in the subsequent process, the stress accompanying thermal expansion generated between the support substrate 2 and the light emitting element 3 can be reliably relieved. . Thereby, in the finally obtained light source device 1, it is possible to reliably prevent peeling at the interface between the support substrate 2, the light emitting element 3, and the bonding film 7.

  Furthermore, since the silicone material is excellent in chemical resistance, it can be effectively used for joining members that are exposed to chemicals and the like for a long time. Specifically, for example, when manufacturing a droplet discharge head of an industrial inkjet printer that uses an organic ink that easily erodes a resin material, if the bonding film 7 is used for bonding, the durability can be ensured. Can be improved. Moreover, since the said silicone material is excellent also in heat resistance, it can be used effectively also at the time of joining of the member exposed to high temperature. Furthermore, it has excellent light resistance and has characteristics that are resistant to deterioration by ultraviolet rays and the like.

The silicone material may be a “polyester-modified silicone material” obtained by a dehydration condensation reaction of a polyester resin with the above-described branched polyorganosiloxane skeleton.
In the present specification, “polyester resin” means a compound obtained by an esterification reaction of trimethylolpropane and terephthalic acid, and preferably has at least two hydroxyl groups in one molecule. Used.

When such a polyester resin is subjected to a condensation reaction with the above-described silicone material, a hydroxyl group of the polyester resin and a silanol group (hydroxyl group) of the silicone material undergo a dehydration condensation reaction, whereby the polyester resin is linked to the silicone material. A polyester-modified silicone material is obtained.
In addition, each content at the time of carrying out esterification reaction of a terephthalic acid and a trimethylol propane is set so that it may become more than the hydroxyl group which a trimethylol propane has rather than the carboxyl group which a terephthalic acid has. Thereby, the synthesized polyester resin has at least two hydroxyl groups in one molecule.
Considering the above, examples of the polyester resin obtained from terephthalic acid and trimethylolpropane include compounds represented by the following general formula (4).

Such a polyester resin contains a phenylene group derived from terephthalic acid in its molecule. When the bonding film 7 is formed using the polyester-modified silicone material containing the polyester resin having such a structure, the bonding film 7 formed has a particularly excellent film strength because the polyester resin contains a phenylene group. Will be demonstrated.
Further, when such a polyester resin is provided in the polyester-modified silicone material, the polyester-modified silicone material usually exists in a state where the polyester resin is exposed from the polyorganosiloxane skeleton having a spiral structure. Will be. Therefore, in the next step, when the liquid film is dried and cured to obtain the bonding film 7, the chance that the polyester resins included in the adjacent polyester-modified silicone materials come into contact with each other increases. As a result, in the adjacent polyester-modified silicone material, the polyester resins are entangled with each other, or the hydroxyl groups included in these are dehydrated and condensed and chemically bonded, so that the strength of the resulting bonding film 7 is more sure. Can be improved.

  Further, as described above, in the case where the support substrate 2 having a hydroxyl group exposed from the bonding surface (surface) is used, the hydroxyl group remaining in the polyester resin, the hydroxyl group provided in the support substrate 2, and Since these are bonded by a dehydration condensation reaction, the polyester-modified silicone material can be bonded to the support substrate 2 not only by physical bonding but also by chemical bonding. As a result, the bonding film 7 is firmly bonded to the bonding surface of the support substrate 2. Furthermore, since a hydrogen bond is generated between the ketone group included in the polyester resin and the hydroxyl group included in the support substrate 2, the bonding film 7 is firmly bonded to the bonding surface of the support substrate 2 even by such bonding. Will be.

The silicone material may be an “epoxy-modified silicone material” obtained by an addition reaction of an epoxy resin with the above-described branched polyorganosiloxane skeleton.
In the present specification, “polyester resin” refers to a compound having an epoxy group at its end, and may be any of a monomer, an oligomer or a polymer having an epoxy group, and at least two in one molecule. Those having an epoxy group are preferably used.

When such an epoxy resin is subjected to an addition reaction with a silicone material, an epoxy group possessed by the epoxy resin and a silanol group (hydroxyl group) possessed by the silicone material undergo an addition reaction, whereby an epoxy resin in which the epoxy resin is linked to the silicone material. A modified silicone material is obtained.
The epoxy resin preferably has a phenylene group in its molecule. When the bonding film 7 is formed using an epoxy-modified silicone material containing an epoxy resin having such a structure, the bonding film 7 formed has a particularly excellent film strength due to the fact that the epoxy resin contains a phenylene group. Will be demonstrated.

  Furthermore, it is preferable that the epoxy resin has a linear structure in its molecular structure. Here, the silicone material to which the epoxy resin is connected usually has a polyorganosiloxane skeleton which is the main skeleton having a helical structure. Therefore, the epoxy resin connected to the silicone material exists in a state where it is exposed (protruded) from the spiral silicone material. Therefore, when the molecular structure of the epoxy resin is linear, in the next step, when the liquid film is dried and cured to obtain the bonding film 7, the epoxy resins included in the adjacent epoxy-modified silicone materials are mutually connected. The chance of contact can be increased. As a result, in the epoxy-modified silicone material, the epoxy resins are entangled with each other, or the epoxy groups included in these are ring-opening polymerized and chemically bonded to each other. Can be improved.

In addition, as described above, when the support substrate 2 is a substrate in which a hydroxyl group is exposed from the bonding surface (surface), the epoxy resin included in the epoxy-modified silicone material is linear. Since the reaction rate of the addition reaction between the epoxy group remaining in the epoxy resin and the hydroxyl group of the support substrate 2 is improved, the epoxy-modified silicone material is not only physically bonded but also chemically. The support substrate 2 can also be securely bonded by bonding. As a result, the bonding film 7 is more firmly bonded to the bonding surface of the support substrate 2.
Considering the above, as the epoxy resin, for example, a bisphenol type epoxy resin is preferably used, and specifically, a bisphenol A type epoxy resin represented by the following general formula (5) can be mentioned.

［式中、ｎは、０または１以上の整数を表す。］

[Wherein n represents 0 or an integer of 1 or more. ]

  In addition, since the bisphenol type epoxy resin is excellent in chemical resistance, the bonding film 7 including the bisphenol type epoxy resin as the epoxy resin is effectively used for bonding members that are exposed to chemicals for a long time. It is done. Moreover, since the bisphenol-type epoxy resin is also excellent in heat resistance, it is effectively used for joining members that are exposed to high temperatures.

  The liquid material may contain an additive in addition to the epoxy-modified silicone material. Examples of such additives include various amine compounds and various acid compounds. If such an additive is contained, this additive will be bonded to the epoxy group of the epoxy resin. If this additive contains two or more amino groups or carboxyl groups, It becomes possible to bond the epoxy groups through the agent. Therefore, since the above-described bonding between the epoxy groups is more likely to occur, the film strength of the obtained bonding film 7 can be more reliably improved.

  Among these, the additive is preferably an acid compound containing a carboxyl group. Thereby, in the next step, a ketone group is contained in the bonding film 7 obtained by drying and curing the liquid film. Therefore, as described above, when the support substrate 2 having a hydroxyl group exposed from the bonding surface (surface) thereof is used, between the ketone group included in the bonding film 7 and the hydroxyl group included in the support substrate 2. Since hydrogen bonding occurs, the bonding film 7 is more strongly bonded to the bonding surface of the first support substrate 2 by such bonding.

Next, the liquid material supplied on the support substrate 2, that is, the liquid film is dried and / or cured. That is, when a solvent or a dispersion medium is contained in the liquid material, the liquid film is dried and the silicone material contained in the liquid film is cured. Thereby, the bonding film 7 is formed on the support substrate 2 as shown in FIG.
The method for drying and curing the liquid film is not particularly limited, but a method for heating the liquid film is preferably used. According to this method, the liquid film can be easily dried and cured by a simple method of heating the liquid film.

Next, as illustrated in FIG. 6A, a resist film 53 is formed on the upper surface of the bonding film 7, and the resist film 53 in a region where the conductive portion 6 is formed on the upper surface of the support substrate 2 is removed. That is, the resist film 53 is patterned so as to cover a region other than the region where the conductive portion 6 of the support substrate 2 is formed.
Next, as shown in FIG. 6B, etching is performed using the resist film 53 as a mask. Thereby, the bonding film 7 in the region where the conductive portion 6 is formed on the upper surface of the support substrate 2 is removed, and the groove 71 is formed.

Next, as illustrated in FIG. 6C, a resist film 53 is further formed, and the resist film 53 in a region where the groove 201 is formed on the upper surface of the support substrate 2 is removed. That is, the resist film 53 is patterned so as to cover a region other than the region where the groove 201 of the support substrate 2 is formed.
Then, the resist film 53 is removed by etching using the resist film 53 as a mask. Thereby, the groove 201 is formed in the support substrate 2.

Next, as shown in FIG. 6D, energy is applied to the surface of the bonding film 7 formed on the support substrate.
When energy is applied to the bonding film 7, in the bonding film 7, a part of molecular bonds (for example, Si—CH ³ bond or Si—Phe) near the surface is cut and the surface is activated. And the adhesiveness with respect to the light emitting element 3 expresses in the surface vicinity.
The support substrate 2 in such a state can be firmly bonded to the light emitting element 3 based on chemical bonding.

  Here, in this specification, the state where the surface is “activated” means a part of the molecular bond on the surface of the bonding film 7 as described above, specifically, for example, a methyl group included in the silicone material. In addition to a state in which a bond part (hereinafter also referred to as “unbonded hand” or “dangling bond”) that is not terminated in the bonding film 7 is generated due to part of the phenyl group being cut off, The bonding film 7 is referred to as an “activated” state including a state in which the bond is terminated by a hydroxyl group (OH group) and a state in which these states are mixed.

The energy applied to the bonding film 7 may be applied using any method. For example, a method of bringing plasma into contact with the bonding film 7 (applying plasma energy), an energy beam is applied to the bonding film 7. Examples include a method of irradiating, a method of heating the bonding film 7, a method of applying a compressive force (physical energy) to the bonding film 7, and a method of exposing the bonding film 7 to ozone gas (applying chemical energy). Thereby, the surface of the bonding film 7 can be activated efficiently.
Among these, it is particularly preferable to apply energy to the bonding film 7 by using a method in which plasma is brought into contact with the bonding film 7.
In this step, as shown in FIG. 6 (d), it is preferable to bring the plasma into contact with not only the bonding film 7 but also the insulating layer 36 of the light emitting element 3.

Next, as shown in FIG. 6E, a conductive paste 61 is supplied into the groove 71.
Next, as illustrated in FIG. 6F, the support substrate 2 and the light emitting element 3 are overlapped so that the bonding film 7 and the light emitting element 3 are in close contact with each other. And it heats and the support substrate 2 and the light emitting element 3 are joined via the joining film | membrane 7. FIG. At this time, the conductive portion 6 is formed by the conductive paste 61. The light source device 1 is manufactured as described above.

Second Embodiment
FIG. 7 is a plan view showing a second embodiment of the light source device of the present invention.
In the following description, the left side in FIG. 7 is “left”, the right side is “right”, the upper side is “upper”, and the lower side is “lower”. In FIG. 7, for the light emitting element 3, only the optical waveguide 39 is indicated by a two-dot chain line, and the illustration of the electrode 38, the prism 41, the lens 42, and the like of the support substrate light emitting element 3 is omitted.

Hereinafter, the second embodiment will be described with a focus on the differences from the first embodiment described above, and the description of the same matters will be omitted.
As shown in FIG. 7, the light source device 1 of the second embodiment has twelve optical waveguides 39. The optical waveguides 39 are arranged in a matrix.
According to the light source device 1, the same effect as that of the first embodiment can be obtained.
The use of the light source device 1 as described above is not particularly limited, and can be suitably applied to, for example, an image forming apparatus.

<Embodiment of projector>
Next, an embodiment when the image forming apparatus of the present invention is applied to a projector (projection display apparatus) will be described.
FIG. 8 is a diagram schematically showing an embodiment when the image forming apparatus of the present invention is applied to a projector.

A projector 300 shown in FIG. 8 includes the light source device 1 described above, an illumination optical system including integrator lenses 302 and 303, a color separation optical system (light guide optical system), and a liquid crystal light corresponding to red (for red). A bulb 84, a liquid crystal light valve 85 corresponding to green (for green), a liquid crystal light valve 86 corresponding to blue (for blue), a dichroic mirror surface 811 reflecting only red light, and reflecting only blue light A dichroic prism (color combining optical system) 81 on which a dichroic mirror surface 812 is formed, and a projection lens (projection optical system) 82.
The color separation optical system includes mirrors 304, 306, and 309, a dichroic mirror 305 that reflects blue light and green light (transmits only red light), a dichroic mirror 307 that reflects only green light, and a dichroic that reflects only blue light. A mirror 308 and condensing lenses 310, 311, 312, 313, and 314 are included.

The liquid crystal light valve 85 includes a liquid crystal panel 16, a first polarizing plate (not shown) bonded to the incident surface side of the liquid crystal panel 16, and a second polarizing plate bonded to the output surface side of the liquid crystal panel 16. (Not shown). The liquid crystal light valves 84 and 86 have the same configuration as the liquid crystal light valve 85. The liquid crystal panels 16 of the liquid crystal light valves 84, 85 and 86 are respectively connected to drive circuits (not shown).
In the projector 300, the liquid crystal light valves 84, 85, 86 and the drive circuit constitute a main part of a modulation device that modulates the light emitted from the light source device 1 based on image information. The main part of the projection apparatus which projects the light modulated by the modulation apparatus is comprised.

Next, the operation of the projector 300 will be described.
First, white light (white light flux) emitted from the light source device 1 passes through the integrator lenses 302 and 303. The light intensity (luminance distribution) of this white light is made uniform by the integrator lenses 302 and 303.
White light transmitted through the integrator lenses 302 and 303 is reflected to the left side in FIG. 8 by the mirror 304, and blue light (B) and green light (G) of the reflected light are respectively reflected by the dichroic mirror 305 in FIG. The red light (R) is reflected downward and passes through the dichroic mirror 305.

The red light transmitted through the dichroic mirror 305 is reflected downward in FIG. 8 by the mirror 306, and the reflected light is shaped by the condenser lens 310 and enters the liquid crystal light valve 84 for red.
Green light of blue light and green light reflected by the dichroic mirror 305 is reflected to the left in FIG. 8 by the dichroic mirror 307, and the blue light passes through the dichroic mirror 307.

The green light reflected by the dichroic mirror 307 is shaped by the condenser lens 311 and enters the green liquid crystal light valve 85.
Further, the blue light transmitted through the dichroic mirror 307 is reflected to the left side in FIG. 8 by the dichroic mirror 308, and the reflected light is reflected to the upper side in FIG. 8 by the mirror 309. The blue light is shaped by the condenser lenses 312, 313 and 314 and enters the blue liquid crystal light valve 86.

As described above, the white light emitted from the light source device 1 is separated into the three primary colors of red, green, and blue by the color separation optical system, and is guided to the corresponding liquid crystal light valves 84, 85, and 86, respectively, and enters. .
At this time, each pixel of the liquid crystal panel 16 of the liquid crystal light valve 84 is switching-controlled (on / off) by a drive circuit that operates based on the image signal for red, and the liquid crystal panel 16 of the liquid crystal light valve 85 is controlled. Each pixel is controlled by a drive circuit that operates based on a green image signal, and each pixel of the liquid crystal panel 16 of the liquid crystal light valve 86 is controlled by a drive circuit that operates based on a blue image signal. The switching is controlled.

Thereby, red light, green light, and blue light are modulated by the liquid crystal light valves 84, 85, and 86, respectively, and a red image, a green image, and a blue image are formed, respectively.
The red image formed by the liquid crystal light valve 84, that is, the red light from the liquid crystal light valve 84, is incident on the dichroic prism 81 from the incident surface 813, and is reflected by the dichroic mirror surface 811 to the left in FIG. The light passes through the mirror surface 812 and exits from the exit surface 816.

Further, the green image formed by the liquid crystal light valve 85, that is, the green light from the liquid crystal light valve 85, enters the dichroic prism 81 from the incident surface 814, and passes through the dichroic mirror surfaces 811 and 812, respectively. The light exits from the exit surface 816.
Further, the blue image formed by the liquid crystal light valve 86, that is, the blue light from the liquid crystal light valve 86, enters the dichroic prism 81 from the incident surface 815, and is reflected by the dichroic mirror surface 812 to the left in FIG. Then, the light passes through the dichroic mirror surface 811 and exits from the exit surface 816.

Thus, the light of each color from the liquid crystal light valves 84, 85 and 86, that is, the images formed by the liquid crystal light valves 84, 85 and 86 are synthesized by the dichroic prism 81, thereby forming a color image. The This image is projected (enlarged projection) onto the screen 320 installed at a predetermined position by the projection lens 82.
According to the projector 300 described above, since the light source device 1 described above is included, a high-quality image can be displayed.

The light source device, the method for manufacturing the light source device, and the image forming apparatus of the present invention have been described based on the illustrated embodiment. However, the present invention is not limited to this, and the configuration of each part has the same function. Can be replaced with any structure having Moreover, other arbitrary structures and processes may be added to the present invention.
Further, the present invention may be a combination of any two or more configurations (features) of the above embodiments.

  DESCRIPTION OF SYMBOLS 1 ... Light source device 2 ... Supporting substrate 20 ... Substrate body 201 ... Groove 21 ... Wiring part 22 ... Conductive part 23 ... Oxide film 3 ... Light emitting element 30 ... Window part 301a, 301b ... Emitter surface 31 ... Substrate 32, 34 ... Grad layer 33 ... Active layer 331 ... Gain region 35 ... Contact layer 36 ... Insulating layer 37, 38 ... Electrode 39 ... Optical waveguide 41 ... Prism 42 ... Lens 51 ... Underlayer 52, 53 ... Resist film 6 ... Conductive part 61 ... Conductive paste DESCRIPTION OF SYMBOLS 7 ... Bonding film 71 ... Groove 8 ... Cooling means 16 ... Liquid crystal panel 81 ... Dichroic prism 811, 812 ... Dichroic mirror surface 813-815 ... Incident surface 816 ... Output surface 82 ... Projection lens 84-86 ... Liquid crystal light valve 300 ... Projector 302, 303 ... integrator lens 304, 306, 309 Mirror 305,307,308 ... dichroic mirror 310 to 314 ... condenser lens 320 ... screen

Claims (10)

A light emitting device having an emitter surface that emits light emitted from the device, an optical waveguide that guides the light to the emitter surface, and an electrode;
A support substrate having a wiring portion;
A silicone-containing molecular bonding film for bonding the light emitting element and the support substrate;
Electrically connecting the wiring part and the electrode, and comprising a conductive part formed of a conductive paste,
The extension of the silicone-containing molecular bonding film has a groove whose end on the emitter surface side is closed,
The light source device, wherein the conductive portion is provided in the groove.   The silicone-containing molecular bonding film formed on the support substrate and having a bonding surface for bonding the light-emitting element and the support substrate; and in the groove formed by the silicone-containing molecular bonding film on the support substrate The light source device according to claim 1, further comprising: the conductive portion filled with the conductive paste, wherein the light emitting element and the support substrate are joined.   The light source device according to claim 2, comprising the silicone-containing molecular bonding film that exhibits adhesiveness by applying energy. The silicone-containing molecular bonding film has a unit structure represented by the chemical formula “R—Si—X ₃ ” at the branch portion and a unit structure represented by the chemical formula “R ₂ —Si—X ₂ ” at the connecting portion. 4. The light source device according to claim 1, wherein the light source device has a branched polyorganosiloxane skeleton having a unit structure represented by a chemical formula “R ₃ —Si—X” at a terminal portion. 5.
[Wherein, each R independently represents a methyl group, a phenyl group or a hydroxyl group, and X represents a siloxane residue. ]   5. The light source device according to claim 1, wherein the emitter surface is disposed closer to the support substrate than a center of a side surface of the light emitting element.   6. The light source device according to claim 1, further comprising a cooling unit that is provided on a side opposite to the light emitting element of the support substrate and cools the light emitting element through the support substrate.   The light source device according to claim 1, wherein at least a part of the groove is provided along the optical waveguide.   The light source device according to claim 1, wherein at least a part of the groove has a region not covered with the silicone-containing molecular bonding film. A light emitting device having an emitter surface that emits light emitted from the device, an optical waveguide that guides the light to the emitter surface, and an electrode;
A support substrate having a wiring portion;
A silicone-containing molecular bonding film for bonding the light emitting element and the support substrate;
A method of manufacturing a light source device comprising a conductive portion that electrically connects the wiring portion and the electrode,
Forming the wiring part on the support substrate;
Forming the silicone-containing molecular bonding film on the support substrate;
Forming a groove whose end is closed at a portion where the conductive part of the silicone-containing molecular bonding film is formed;
Providing energy to the silicone-containing molecular bonding film to develop adhesiveness on and near the surface of the silicone-containing molecular bonding film, and supplying a conductive paste into the groove;
The light emitting element is disposed on the support substrate through the silicone-containing molecular bonding film so that the end of the groove is located on the emitter surface side, heated, and the conductive portion is removed from the conductive paste. Forming and electrically connecting the wiring part and the electrode by the conductive part, and joining the light emitting element and the support substrate through the silicone-containing molecular bonding film. A method for manufacturing a light source device.   An image forming apparatus comprising the light source device according to claim 1.

Images