JP2013236142A - Non-reciprocal circuit element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a non-reciprocal circuit element which has a wide-band operating frequency even when miniaturized.SOLUTION: The non-reciprocal circuit element includes: a first central conductor constituting a first inductance element L1 arranged between a first input/output port P1 and a second input/output port P2; a second central conductor constituting a second inductance element L2 arranged between the second input/output port P2 and a ground; and a third capacitance element C3 which is connected in parallel to part of the second central conductor and is connected to the second input/output port P2.

Description

  The present invention relates to a nonreciprocal circuit device having a nonreciprocal transmission characteristic for a high-frequency signal, and more particularly to a nonreciprocal circuit device that is used in a mobile communication system such as a mobile phone and is generally called an isolator or a circulator.

  Non-reciprocal circuit elements such as isolators are used in mobile communication devices that use frequency bands of several hundreds of MHz to several tens of GHz, such as mobile phone base stations and terminals. For example, the isolator is disposed between the power amplifier and the antenna in the transmission stage of the mobile communication device, prevents backflow of unnecessary signals to the power amplifier, and stabilizes the impedance on the load side of the power amplifier. Therefore, the isolator is required to have excellent insertion loss characteristics, reflection loss characteristics, and isolation characteristics.

  As such an isolator, a two-terminal pair isolator whose equivalent circuit is shown in FIG. 10 is known (Patent Document 1).

  This two-terminal pair isolator 1 is electrically insulated from the first center electrode L1 and the first center conductor L1 electrically connected between the first input / output port P1 and the second input / output port P2. A second center electrode L2 which is arranged to intersect and is electrically connected between the second input / output port P2 and the ground, and electrically between the first input / output port P1 and the second input / output port P2. The first center electrode L1 and the first capacitance element C1 constituting the first parallel resonance circuit, the resistance element R, the second input / output port P2, and the ground are electrically connected, and the second center electrode L2 and a second capacitance element C2 constituting a second parallel resonant circuit.

  The frequency at which the isolation characteristic (reverse damping characteristic) is maximized is set in the first parallel resonant circuit, and the frequency at which the insertion loss characteristic is minimized is set in the second parallel resonant circuit. When a high frequency signal propagates from the first input / output port P1 to the second input / output port P2, the first parallel resonance circuit between the first input / output port P1 and the second input / output port P2 does not resonate, but the second parallel resonance. Since the circuit resonates, there is little transmission loss and good insertion loss characteristics. On the other hand, the current flowing back from the second input / output port P2 to the first input / output port P1 is absorbed by the resistance element R connected between the first input / output port P1 and the second input / output port P2. Therefore, it is possible to prevent unnecessary reflected waves accompanying the impedance variation of the antenna from entering back into the power amplifier or the like.

  By the way, in order to cope with the increasing number of subscribers, the cellular phone has a wider frequency band (wide band) and handles a plurality of transmission / reception systems (WCDMA, PDC, PHS, GSM (registered trademark), etc.). Accordingly, non-reciprocal circuit elements are also required to have a wider operating frequency. For example, there is EDGE (Enhanced Data GSM Environment) as one of data transmission technologies using GSM and TDMA mobile phone networks. When two bands of GSM850 / 900 are used, the pass frequency band required for the nonreciprocal circuit element is 824 to 915 MHz.

  In order to obtain a broadband non-reciprocal circuit element, it is necessary to consider various manufacturing variations such as inductance caused by a connection line connecting reactance elements and stray capacitance caused by interference between electrode patterns. However, since an unnecessary reactance component is connected to the first and second parallel resonant circuits, the input impedance deviates from a desired value. As a result, impedance mismatch with other circuits connected to the nonreciprocal circuit element occurs, and the insertion loss characteristic and the isolation characteristic deteriorate.

  Although it is not impossible to determine the inductance and capacitance constituting the first and second parallel resonant circuits in view of unnecessary reactance components, the input impedances of the first and second input / output ports P1 and P2 are determined. It was difficult to adjust independently, and it was practically impossible to obtain an optimum matching condition with an external circuit. In particular, a shift in the input impedance of the first input / output port P1 must be avoided because it causes an increase in insertion loss.

JP 2004-88743 A

  Accordingly, an object of the present invention is to obtain a non-reciprocal circuit device having a wide operating frequency even if it is downsized.

  The nonreciprocal circuit device of the present invention includes a first central conductor L1 disposed between the first input / output port P1 and the second input / output port P2, and a first central conductor L1 connected in parallel to the first central conductor L1. The first capacitance element C1 constituting the resonance circuit, the resistance element R connected in parallel to the first parallel resonance circuit, and the second input / output port P2 of the first resonance circuit and the ground. A second center conductor L2, a second capacitance element C2 connected in parallel with the second center conductor L2 to form a second resonance circuit, and a part of the second center conductor L2, connected in parallel; The non-reciprocal circuit device includes a third capacitance device C3 connected to the input / output port P2.

  Furthermore, it is preferable to include a third inductance element L3 disposed between the second resonance circuit and the ground.

  In the nonreciprocal circuit device of the present invention, the first center conductor and the second center conductor are configured as a center conductor assembly using microwave ferrite in an electrode pattern, and the first or second capacitance element C1. , C2, at least a part of the second capacitance element C2 is constituted by an electrode pattern in the multilayer substrate, and the central conductor assembly and the multilayer substrate are overlapped to form one electrode pattern of the second central conductor. The third capacitance element C3 is preferably formed by a portion and a part of the electrode pattern of the second capacitance element C2.

  The third inductance element L3 is preferably formed by an electrode pattern in the multilayer substrate, a chip inductor mounted on the multilayer substrate, or an air-core coil so as not to cause electromagnetic coupling with the first inductance element L1. I have to.

  At least a part of the first or second capacitance element is formed by an electrode pattern in the laminated substrate. At least a part of the first or second capacitance element may be constituted by a chip capacitor or a single plate capacitor. Here, the “single plate capacitor” is a capacitor formed by forming electrode patterns on opposing main surfaces of a dielectric substrate.

  According to the nonreciprocal circuit device of the present invention, a wide operating frequency band (pass band) can be obtained even if the circuit is reduced in size. In its passband, it has excellent insertion loss characteristics and reflection characteristics, and it is easy to adjust the input impedance. Therefore, when it is placed between the power amplifier and the antenna in the transmitter of mobile communication equipment, it is an unnecessary signal to the power amplifier. In addition to preventing reverse current flow, the impedance on the load side of the power amplifier is stabilized. If the nonreciprocal circuit device of the present invention is used, the battery life of a mobile phone or the like is extended.

It is a figure which shows the equivalent circuit of the nonreciprocal circuit device by one embodiment of this invention. 1 is a perspective view showing a non-reciprocal circuit device according to a first embodiment of the present invention. It is a disassembled perspective view which shows the internal structure of the nonreciprocal circuit device of FIG. It is an expanded view which shows the center conductor assembly used for the nonreciprocal circuit device by the 1st embodiment of this invention. It is an expanded view which shows the laminated substrate used for the nonreciprocal circuit device by the 1st embodiment of this invention. It is a figure which shows another equivalent circuit of the nonreciprocal circuit device by one embodiment of this invention. It is a top view which shows the bottom pattern of the center conductor assembly used for the nonreciprocal circuit device by the 1st embodiment of this invention. It is a graph which shows the input side VSWR characteristic and insertion loss characteristic of the nonreciprocal circuit element of Example 1 and Comparative Example 1. It is a graph which shows the output side VSWR characteristic and isolation characteristic of the nonreciprocal circuit element of Example 1 and Comparative Example 1. It is a figure which shows the equivalent circuit of the conventional nonreciprocal circuit element.

The nonreciprocal circuit device of the present invention will be described below.
FIG. 1 shows an equivalent circuit of a broadband non-reciprocal circuit device according to an embodiment of the present invention. The nonreciprocal circuit element includes a first center conductor L1 disposed between the first input / output port P1 and the second input / output port P2, and a first resonance circuit connected in parallel with the first center conductor L1. The first capacitance element C1 constituting the first, the resistance element R connected in parallel to the first parallel resonance circuit, and the second capacitance input between the second input / output port P2 of the first resonance circuit and the ground. A central conductor L2, a second capacitance element C2 connected in parallel with the second central conductor L2 to form a second resonance circuit, and a part of the second central conductor L2, connected in parallel, and the second input / output A third capacitance element C3 connected to the port P2.

  A feature of the present invention is that it includes a third capacitance element C3 connected in parallel to a part of the second center conductor L2 and connected to the second input / output port P2.

In the conventional non-reciprocal circuit device, the first resonant circuit arranged between the first input / output port P1 and the second input / output port P2 in an equivalent circuit functions as a high-pass filter, Since the second resonance circuit arranged between the ground and the ground functions as a low-pass filter, it exhibits characteristics like a band-pass filter and has a relatively large attenuation outside the pass band.
In contrast, the non-reciprocal circuit element of the present invention is the same as the conventional non-reciprocal circuit element in that it exhibits characteristics like a bandpass filter, but because the third capacitance element C3 is connected, The input-side VSWR characteristic and the output-side VSWR characteristic are bimodal characteristics. In particular, this tendency is conspicuous in the input-side VSWR characteristics, and has a broadband transmission characteristic as compared with the conventional non-reciprocal circuit device.

  FIG. 6 shows an equivalent circuit of the nonreciprocal circuit device according to an example of the embodiment of the present invention. This embodiment is different from the equivalent circuit of the nonreciprocal circuit device shown in FIG. 1 in that a third inductance element L3 is disposed between the second resonance circuit and the ground. The third inductance element L3 functions as a harmonic trap circuit with the second resonance circuit, and is provided when a harmonic attenuation amount is required. The other configuration of this equivalent circuit is the same as that shown in FIG.

  FIG. 2 shows the external appearance of the non-reciprocal circuit device 1, and FIG. 3 shows its structure. The non-reciprocal circuit device 1 includes a microwave conductor, a center conductor assembly 30 including a first center conductor and a second center conductor, and a first center conductor. The first inductance element L1 configured and the second inductance element L2 configured by the second central conductor, a part of the first capacitance element C1 configuring the resonance circuit, the multilayer substrate 40 having the second capacitance element C2, and the multilayer Chip components (resistive element 50, capacitance element 55 constituting a part of first capacitance element C1), metal frame 10b (lower yoke), and input terminal 65 electrically connected to laminated substrate 40 mounted on substrate 40 (IN), a DC magnetic field is applied to the resin base 60 having the output terminal 65 (OUT) and the microwave ferrite that is a ferrimagnetic material. The permanent magnet 20, the upper yoke 10a (sometimes referred to as the upper case), and the permanent magnet 20, the central conductor assembly 30, and the multilayer substrate are formed in the space formed by the resin base 60 and the upper case 10a. 40, etc. The upper yoke 10a and the metal frame 10b are made of a ferromagnetic material such as soft iron to constitute a magnetic circuit.

FIG. 4 shows the internal structure of the center conductor assembly 30. The center conductor assembly 30 includes a first line 36a to 36c, a second line 37a to 37c and a third line 38a to 38c that form a first center conductor constituting the first inductance element L1, and a second inductance. A fourth line 35a, a fifth line 35b, and a sixth line 35c forming a second central conductor constituting the element L2 are provided.
On the layer 4, the first lines 36a to 36c and the third lines 38a to 38c are disposed on both sides of the fourth line 35a and the sixth line 35c of the second central conductor. The second lines 37a to 37c formed on the layer 3 are connected to one end of the first lines 36a to 36c and one end of the third lines 38a to 38c through via holes provided in the layer 4. Yes. As a result, the second lines 37a to 37c intersect with the fourth line 35a and the sixth line 35c constituting the second center conductor in the vicinity of several μm to several tens μm through the magnetic layer. The first center conductor and the second center conductor preferably intersect at an angle of 80 to 110 °. Since the input impedance of the nonreciprocal circuit element changes depending on the crossing angle, the crossing angle is adjusted as appropriate so that the optimum impedance matching condition is obtained.

  A terminal electrode 31 (IN) of the first central conductor and a terminal electrode 32 (OUT) common to the first and second central conductors are formed on the back surface of the layer 1, and the first central conductor constituting the first central conductor is formed. The other ends of the lines 36a to 36c are connected to the common terminal electrode 31 through via holes (indicated by black circles) provided in the layers 1 to 4, and the other ends of the third lines 38a to 38c are connected to the layer 1. Are connected to the terminal electrode 32 through via holes provided in .about.4.

  One end of the fourth line 35a constituting the second center conductor is connected to the terminal electrode 32 (OUT) on the back surface of the layer 1 through a via hole, and one end of the sixth line 35c constituting the second center conductor. Is connected to the terminal electrode 33 (GND) on the back surface of the layer 1 through a via hole. The other ends of the fourth and sixth lines 35a and 35c constituting the second center conductor were connected to the fifth line 35b formed on the back surface of the layer 1 via a via hole and wound. It becomes a single track configuration. The fifth line 35b constitutes a third capacitance element C3 with an electrode pattern formed on the laminated substrate 40 described later.

The microwave ferrite constituting the central conductor assembly 30 may be a magnetic material that functions as a nonreciprocal circuit element with respect to a DC magnetic field from the permanent magnet 20. The microwave ferrite 10 preferably has a garnet structure and is made of YIG (yttrium, iron, garnet) or the like. A part of Y in YIG may be substituted with Gd, Ca, V, or the like, and a part of Fe may be substituted with Al, Ga, or the like. Depending on the frequency used, Ni-based ferrite may be used. Center conductor assembly 30
Has an outer dimension of, for example, 1.5 mm × 1.2 mm × 0.2 mm, each line has a width of 0.1 mm and a thickness of 20 μm, and the distance between the centers of the first line to the third line (pitch ) Is 0.1 to 0.3 mm. The via hole has a circular cross section with a diameter of 0.1 mm to 0.2 mm, but may have a different cross sectional shape.

In order to form the central conductor assembly 30 having a laminated structure, a green sheet of magnetic ceramic powder such as garnet ferrite is first produced by a doctor blade method.
The composition of the magnetic ceramic powder is, for example, (Y _1.45 Bi _0.85 Ca _0.7 ) (Fe _3.95 In _0.3 Al _0.4 V _0.35 ) O ₁₂ (atomic ratio). In order to produce a green sheet having this composition, for example, a starting material composed of Y ₂ O ₃ , Bi ₂ O ₃ , CaCO ₃ , Fe ₂ O ₃ , In ₂ O ₃ , Al ₂ O ₃ and V ₂ O 5 is used with a ball mill. After wet mixing, the resulting slurry is dried, calcined at 850 ° C., wet-ground with a ball mill, and the resulting polycrystalline magnetic ceramic powder is mixed with an organic binder (for example, polyvinyl butyral), a plasticizer (for example, butylphthalyl, Butyl glycolate) and an organic solvent (for example, ethanol or butanol) are mixed with a ball mill to adjust the viscosity, and then formed into a sheet by a doctor blade method.
The thickness of the green sheet is, for example, 40 μm and 80 μm after sintering. On each green sheet, a conductive paste such as Ag, Cu or the like is printed in a predetermined pattern to form an electrode pattern including the first and second center conductors, and through holes are filled with the conductive paste to form via holes. . The green sheets on which the electrode patterns are formed are stacked and thermocompression bonded, and a slit is formed in a predetermined size with a dicing saw or a steel blade, followed by firing to produce an aggregate substrate having a plurality of central conductor assemblies.

  The aggregate substrate is divided by slits to form individual central conductor assemblies, and the exposed portions of the via holes, the lines appearing on the surface, and the terminal electrodes are plated. In addition, the division | segmentation of an aggregate substrate may be performed before sintering, a slit may be formed after sintering, and it may not be further plated.

  FIG. 5 shows the structure of the laminated substrate 40. The laminated substrate 40 is also formed of a laminated body that is integrally sintered, and capacitive electrodes (electrode patterns) 81 to 86, ground electrodes (electrode patterns) 95, and first electrodes forming the first and second capacitance elements C1 and C2 therein. It has a line electrode 87 that forms a three-inductance element L3. Electrodes 45a to 45e connected to the terminal electrodes 31 to 33 of the central conductor assembly 30 are formed on the top surface of the multilayer substrate 40, and mounting terminals 65 (IN) formed on the resin base 60 are formed on the back surface. Mounting terminals P1 (IN), P2 (OUT), and 95 (GND) that are connected to 65 (OUT), 66 (GND), and 70 (GND) are provided. Here, P1 and P2 correspond to the first and second input / output ports P1 and P2 of the equivalent circuit shown in FIG. The mounting terminal 70 (GND) is connected to the mounting terminal 95 (GND) of the multilayer substrate 40 through the metal frame 10b serving as a lower yoke.

  The first capacitance element C1 is formed of electrode patterns 82 to 86, and the electrode pattern 82 is shared with the second capacitance element C2. The terminal electrode P1 (IN) is connected to the electrode patterns 83 and 85 and the electrode 45c of the layer 7 through via holes formed in the layers 1 to 7. The electrode 45 c is connected to the terminal electrode 31 (IN) of the central conductor assembly 30. The terminal electrode P2 (OUT) is connected to the electrode patterns 82, 84, 86 and the electrode 45a of the layer 7 through via holes formed in the layers 1-7. The electrode 45 a is connected to the terminal electrode 32 (OUT) of the central conductor assembly 30.

  The second capacitance element C2 is formed by the electrode patterns 81 and 82, and the line electrode 87 formed together with the electrode pattern 81 formed in the layer 1 forms the third inductance element L3. The line electrode 87 is connected to the electrode 45 b of the layer 7 through the electrode pattern 94 formed in the layer 2 and the via hole formed in the layers 2 to 7. The electrode 45 b is connected to the terminal electrode 33 (GND) of the central conductor assembly 30.

The laminated substrate 40 is made of a seven-layer dielectric sheet. A conductive paste is printed on each dielectric sheet to form an electrode pattern. The electrode patterns on each dielectric sheet are electrically connected by via holes (indicated by black circles in the figure) filled with a conductive paste.
The ceramic used for the dielectric sheet is preferably low-temperature sintered ceramics (LTCC) that can be fired simultaneously with a conductive paste such as Ag. From an environmental point of view, the low-temperature sintered ceramics preferably do not contain lead. The composition of such low-temperature sintered ceramics is 10-60 mass% (Al ₂ O ₃ conversion) Al, 25-60 mass% (SiO ₂ conversion) Si, 7.5-50 mass% (SrO conversion). And 0.1 to 10% by mass (in terms of Bi ₂ O ₃ ) of Bi as a subcomponent with respect to 100% by mass of the main component consisting of Sr of less than 20% by mass and less than 20% by mass (in terms of TiO ₂ ). Selected from the group consisting of 0.1 to 5% by mass (converted to Na ₂ O), 0.1 to 5% by weight (converted to K ₂ O), and 0.1 to 5% by weight (converted to CoO) At least the one member, selected from the group consisting of Mn, and the group consisting of 0.01 to 5 mass% of Ag of 0.01 to 5 mass% Cu of (CuO equivalents), 0.01 to 5 mass% (MnO ₂ equivalent) It is preferable to contain at least one of them. When the laminated substrate 50 is made of a low-temperature sintered ceramic having a high Q value, a highly conductive metal such as Ag, Cu, Au or the like can be used for the electrode pattern, so that an extremely low loss nonreciprocal circuit device can be configured.

  The ceramic mixture having the above composition is calcined at 700 to 850 ° C., finely pulverized to an average particle size of 0.6 to 2 μm, binder such as ethyl cellulose, olefin-based thermoplastic elastomer, polyvinyl butyral (PVB), butylphthalyl butyl, etc. A dielectric green sheet is produced by a doctor blade method or the like by mixing with a plasticizer such as glycolate (BPBG) and a solvent to form a slurry. Via holes are formed in each green sheet, conductive paste is printed to form an electrode pattern, and the via holes are filled with the same conductive paste. Then, the laminated sheet 40 is produced by laminating | stacking and baking a green sheet.

  The electrode pattern on the surface of the multilayer substrate 40 is preferably subjected to Au plating with Ni plating as a base. Since the Au plating has high conductivity and good solder wettability, the lossy circuit element can be reduced in loss. Ni plating improves the adhesion strength between the electrode pattern such as Ag, Cu, Ag-Pd and the Au plating. The thickness of the electrode pattern including plating is usually about 5 to 20 μm, and is preferably at least twice as thick as the skin effect can be obtained.

  Since the multilayer substrate 40 is as small as about 1.9 mm × 1.6 mm × 0.18 mm or less, first, a mother multilayer substrate in which a plurality of multilayer substrates 40 are connected via the division grooves is manufactured, and along the division grooves It is preferable to fold and separate into individual laminated substrates 40. Of course, the mother laminated substrate may be cut with a dicer or a laser without providing the dividing groove.

  When the central conductor assembly 30 is mounted on the surface of the multilayer substrate 40, the second lines 35b constituting the second central conductor are arranged at positions that do not interfere with the electrodes 45a to 45e on the surface of the multilayer substrate 40. An electrode pattern 86 connected to the second input / output port P2 is formed on the layer 6 of the multilayer substrate 40, and is opposed to the second line 35b via the layer 7 with an interval of several tens of μm. With such a configuration, a third capacitance element C3 connected in parallel to a part of the second central conductor and connected to the second input / output port P2 is formed. Note that the third capacitance element C <b> 3 can be configured by a chip capacitor mounted on the main surface of the multilayer substrate 40.

  The resistor element 50 (R) is connected between the electrode 45c and the electrode 45e of the layer 1 and the chip capacitor 55 constituting a part of the first capacitance element C1 is soldered between the electrode 45c and the electrode 45d. . The electrode 45d and the electrode 45e are connected to the electrode pattern 86 formed in the layer 6 through a via hole provided in the layer 7.

  The resin base 60 includes an input terminal 65 (IN) (first input / output port P1 of an equivalent circuit) and an output terminal 65 (OUT) (second input / output of an equivalent circuit) made of a conductive thin plate such as a Cu plate of about 0.1 mm. Port P2) is insert-molded. In FIG. 3, the resin base 60 shows only one surface side, but mounting terminals 65 (IN), 65 (OUT), and 66 (GND) are also formed on the back surface side in a similar arrangement. The conductor thin plate is preferably, for example, a surface of SPCC having a thickness of about 0.15 mm subjected to 1 to 3 μm Cu plating and 2 to 4 μm thick Ag plating. High frequency characteristics are improved by the plating process.

The permanent magnet 20 for applying a DC magnetic field to the central conductor assembly 30 is fixed to the inner wall surface of the substantially box-shaped upper case 10a with an adhesive or the like. The permanent magnet 20 is preferably formed of a ferrite magnet (SrO.nFe ₂ O ₃ ) that is inexpensive and has good temperature characteristics compatibility with the microwave ferrite. Particularly, a part of Sr and / or Ba is replaced with an R element (at least one kind of rare earth elements including Y), and a part of Fe is at least selected from the group consisting of Co, Mn, Ni and Zn. A ferrite magnet having a magnetoplumbite type crystal structure substituted with 1 type) and added in the pulverization step after calcining in the state of R element and / or M element is a general ferrite magnet (SrO.nFe ₂ O ₃ ), which has a higher magnetic flux density, and is preferable because the nonreciprocal circuit device can be made smaller and thinner. The ferrite magnet preferably has a residual magnetic flux density Br of 420 mT or more and a coercive force iHc of 300 kA / m or more. Rare earth magnets such as Sm—Co magnets, Sm—Fe—N magnets, Nd—Fe—B magnets can also be used.

  Such component parts are stacked as shown in FIG. 3 and are electrically connected as appropriate by soldering to form a nonreciprocal circuit element.

Examples of the present invention will be described. The non-reciprocal circuit device of the example includes the equivalent circuit shown in FIG. 6 and has the structure shown in FIGS. Further, since the processes and materials including the component parts are the same, the description thereof is omitted.
The outer dimensions of the resin base 60 used are 2 mm × 2 mm × 0.2 mm, the laminated substrate 40 is 1.9 mm × 1.6 mm × 0.18 mm, and the central conductor assembly 30 is 1.5 mm × 1.2 mm. × 0.16 mm. As an example, a center conductor assembly in which the width A of the fifth line 35b constituting the second center conductor shown in FIG. 6 is 0.18 mm to 0.24 mm is manufactured, and the capacitance of the third capacitance element C3 is different. A nonreciprocal circuit device was produced.
As a comparative example, the electrode pattern constituting the first capacitance element C1 in which the width A of the fifth line 35b is 0.14 mm and the overlapping part with the fifth line 35 is removed is used for the layer 6 of the multilayer substrate 40. The non-reciprocal circuit device was manufactured. The capacitance value of the first capacitance element C1 is adjusted so as to be the same as that of the embodiment by other electrode patterns.

  The obtained nonreciprocal circuit element corresponds to an external dimension of 2.0 mm × 2.0 mm × 1.2 mm and a frequency of 824 to 915 MHz. With respect to this nonreciprocal circuit device, out-of-band attenuation characteristics, insertion loss, isolation, input side and output side VSWR were measured by a network analyzer. Table 1 shows the measured values of each sample at frequencies 817 MHz, 833 MHz, and 849 MHz. 8 shows the input side VSWR characteristics and insertion loss characteristics, and FIG. 9 shows the output side VSWR characteristics and isolation characteristics, respectively, in Example 3: A = 0.24 mm and Comparative Example: A = 0.14 mm. The waveform is shown as a graph.

  As shown in the insertion loss characteristic of FIG. 8, the non-reciprocal circuit element of the embodiment has a bimodal characteristic in the insertion loss characteristic. For this reason, the peak value of the insertion loss is slightly lower than that of the comparative example, but the band is widened, and the frequency band in which the insertion loss is 0.6 dB or less is a 15% wide band. In addition, as shown in Table 1 and FIG.

1 Non-reciprocal circuit device 10a Upper yoke (upper case)
10b Metal frame 10b (lower yoke)
20 permanent magnet 30 central conductor assembly 40 laminated substrate 60 resin base 35a fourth line 35b fifth line 35c sixth line 36a-36c first line 37a-37c second line 38a-38c third line P1 First input / output port P2 Second input / output port L1 First inductance element (first central conductor)
L2 Second inductance element (second center conductor)
L3 Third inductance element C1 First capacitance element C2 Second capacitance element C3 Third capacitance element R Resistance element

Claims (3)

  A first center conductor constituting a first inductance element L1 disposed between the first input / output port P1 and the second input / output port P2, and a first resonance circuit connected in parallel with the first inductance element L1. The first capacitance element C1 constituting the first, the resistance element R connected in parallel to the first parallel resonance circuit, and the second capacitance input between the second input / output port P2 of the first resonance circuit and the ground. A second central conductor constituting the inductance element L2, a second capacitance element C2 constituting a second resonance circuit connected in parallel with the second inductance element L2, and a part of the second central conductor are connected in parallel. And a third capacitance element C3 connected to the second input / output port P2.   A nonreciprocal circuit device comprising a third inductance element L3 disposed between the second resonance circuit and ground. The non-reciprocal circuit device according to claim 1 or 2,
In the center conductor assembly using microwave ferrite, the first center conductor and the second center conductor are configured with electrode patterns,
Among the first or second capacitance elements C1 and C2, at least a part of the second capacitance element C2 is constituted by an electrode pattern in the multilayer substrate,
The third capacitance element C3 is formed by overlapping the central conductor assembly and the multilayer substrate, and using a part of the electrode pattern of the second central conductor and a part of the electrode pattern of the second capacitance element C2. A non-reciprocal circuit device characterized by the above.

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