JP2013218901A - Sample holding device and sample analysis device - Google Patents

Sample holding device and sample analysis device Download PDF

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JP2013218901A
JP2013218901A JP2012088918A JP2012088918A JP2013218901A JP 2013218901 A JP2013218901 A JP 2013218901A JP 2012088918 A JP2012088918 A JP 2012088918A JP 2012088918 A JP2012088918 A JP 2012088918A JP 2013218901 A JP2013218901 A JP 2013218901A
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sample
hole
stage
sample stage
holding device
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JP5851318B2 (en
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Toshiaki Suzuki
木 俊 明 鈴
Hideki Matsushima
島 英 輝 松
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Jeol Ltd
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Jeol Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a sample holding device capable of performing crystal orientation analysis of a sample without taking time and effort.SOLUTION: In performing EBSD measurement of a sample, an operator extracts a sample table 1 with sample 13 fixed from a first hole 7, and inserts the sample table into a second hole 8. In this state, a sample analysis surface 13a is inclined by 70° with respect to a horizontal plane. When sample holder 6 is attached to a sample stage of an electron beam irradiation device having an option axis in a vertical direction, a satisfactory backscattering electron diffraction pattern can be acquired without performing inclination adjustment of the sample stage.

Description

本発明は、ＥＢＳＤ（Electron Back Scatter Diffraction）装置のような試料解析装置に関する。   The present invention relates to a sample analysis apparatus such as an EBSD (Electron Back Scatter Diffraction) apparatus.

図１に示すように、ＥＢＳＤ装置は、水平面から７０°傾いた試料解析面に鉛直方向から電子線を照射し、試料から放出した後方散乱電子の回折パターンをＥＢＳＤ検出器で検出して、試料の結晶方位を解析する装置である（例えば、特許文献１参照）。   As shown in FIG. 1, the EBSD device irradiates an electron beam from a vertical direction onto a sample analysis surface tilted by 70 ° from a horizontal plane, detects a diffraction pattern of backscattered electrons emitted from the sample with an EBSD detector, Is an apparatus for analyzing the crystal orientation (see, for example, Patent Document 1).

このようなＥＢＳＤ装置の中にはイオンビーム照射手段を備えたものがあり、イオンビーム照射手段を備えたＥＢＳＤ装置（「３次元ＥＢＳＤ装置」と呼ぶ）は、イオンビームで試料の端面をスライス加工する毎に加工面の結晶方位情報を取得し、取得した結晶方位情報に基づいて試料の３次元情報を取得する装置である。   Some of these EBSD apparatuses are equipped with ion beam irradiation means. The EBSD apparatus equipped with ion beam irradiation means (referred to as “three-dimensional EBSD apparatus”) slices the end face of the sample with the ion beam. This is an apparatus that acquires crystal orientation information of a processed surface every time it performs, and acquires three-dimensional information of a sample based on the acquired crystal orientation information.

特開２００５−２９４１２９号公報JP 2005-294129 A

さて、３次元ＥＢＳＤ装置において厚い試料のイオンビーム加工が進むと、図２に示すように、試料にイオンビーム加工による段差が生じてしまう。すると、この段差部分によって後方散乱電子のＥＢＳＤ検出器への入射が遮られてしまい、試料加工面の結晶方位情報が得られなくなる。   Now, when ion beam processing of a thick sample proceeds in the three-dimensional EBSD apparatus, a step due to ion beam processing occurs in the sample as shown in FIG. Then, the stepped portion blocks the backscattered electrons from entering the EBSD detector, and the crystal orientation information on the sample processed surface cannot be obtained.

そこで、試料の段差を生じなくするために、試料全域をイオンビームで一度にスキャン加工しきれる大きさに試料を小さく作製する方法がある。この方法では、図３に示すように、試料を直径２０〜３０μｍ程度のピラー状に加工して結晶方位の３次元情報を取得している。   Therefore, in order to prevent the step of the sample from occurring, there is a method in which the sample is made small enough to be scanned with the ion beam all at once with the ion beam. In this method, as shown in FIG. 3, the sample is processed into a pillar shape having a diameter of about 20 to 30 μm, and three-dimensional information on the crystal orientation is acquired.

しかし、このようなピラー状試料の作製には、試料母材の全体を研磨などで加工する必要があり、非常に手間がかかる。また、この方法では、図３に示すように非解析部分も時間をかけてピラー状に加工しており、このような加工作業は無駄である。   However, manufacturing such a pillar-shaped sample requires processing the entire sample base material by polishing or the like, which is very laborious. In this method, as shown in FIG. 3, the non-analyzed portion is also processed into a pillar shape over time, and such a processing operation is useless.

本発明は、このような点に鑑みてなされたものであり、その目的は、試料の結晶方位解析を手間をかけずに行える試料保持装置を提供することにある。   The present invention has been made in view of the above points, and an object of the present invention is to provide a sample holding device capable of analyzing a crystal orientation of a sample without taking time and effort.

上記目的を達成する本発明の試料保持装置は、後方散乱電子回折を利用して結晶性試料の方位解析を行うときに用いられる試料台であって、試料取り付け面を有する試料台と、前記試料台を保持するための第１および第２の保持部を有する試料ホルダとを備えた試料保持装置であり、前記試料台が前記第１保持部に保持されたときには前記試料取り付け面が水平状態となり、前記試料台が前記第２保持部に保持されたときには前記試料取り付け面が水平状態から所定角度傾いた状態となるように構成されていることを特徴とする。   The sample holding device of the present invention that achieves the above object is a sample stage used when performing orientation analysis of a crystalline sample using backscattered electron diffraction, the sample stage having a sample mounting surface, and the sample A sample holder having a first and a second holder for holding the stage, and when the sample stage is held by the first holder, the sample mounting surface is in a horizontal state. The sample mounting surface is configured to be inclined at a predetermined angle from a horizontal state when the sample stage is held by the second holding unit.

本発明によれば、試料の結晶方位解析を手間をかけずに行える試料保持装置を提供できる。   ADVANTAGE OF THE INVENTION According to this invention, the sample holding device which can perform the crystal orientation analysis of a sample without taking an effort can be provided.

従来のＥＢＳＤ装置を説明するために示したものである。It is shown in order to explain the conventional EBSD device. 従来の問題点を説明するために示したものである。It is shown in order to explain the conventional problems. 従来の試料作製方法を説明するために示したものである。It is shown in order to explain the conventional sample preparation method. 本発明の試料台の一例を示したものである。An example of the sample stand of this invention is shown. 本発明の試料ホルダの一例を示したものである。An example of the sample holder of this invention is shown. 本発明を説明するために示したものである。It is shown in order to demonstrate this invention. 本発明を説明するために示したものである。It is shown in order to demonstrate this invention. 本発明の試料解析装置の一例を示したものである。1 shows an example of a sample analyzer of the present invention.

以下、図面を用いて本発明の実施例の形態について説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図４は本発明の試料台の一例を示したものである。図４において、１は試料台であり、その形状は棒状である。２は先端面であり、後述する１０μｍ×１０μｍ×１０μｍ程度の小さい試料はこの先端面２で支持される。試料取り付け面である先端面２は、試料台１の長手方向（図４の矢印Ａの方向）に垂直な端面である。   FIG. 4 shows an example of the sample stage of the present invention. In FIG. 4, 1 is a sample stage, and the shape is a rod shape. Reference numeral 2 denotes a tip surface, and a small sample of about 10 μm × 10 μm × 10 μm, which will be described later, is supported by the tip surface 2. The front end surface 2 which is a sample mounting surface is an end surface perpendicular to the longitudinal direction of the sample stage 1 (the direction of arrow A in FIG. 4).

試料台１は、先端面２を上面とする円柱状の試料支持部３と、鍔状の突出部４と、円柱状の被保持部５とがつながって構成されており、これら試料支持部３と突出部４と被保持部５の中心軸は同じ軸上に位置している。試料支持部３と被保持部５の間に位置している突出部４の平面４ａ,４ｂ（平面４ｂは平面４ａの反対側の面）は、先端面２に平行である。また、円柱状の試料支持部３の直径は２０〜３０μｍ程度である。   The sample stage 1 is configured by connecting a columnar sample support portion 3 having a front end surface 2 as an upper surface, a bowl-shaped protruding portion 4 and a column-shaped held portion 5, and these sample support portions 3. The central axis of the protruding portion 4 and the held portion 5 is located on the same axis. The flat surfaces 4 a and 4 b (the flat surface 4 b is a surface opposite to the flat surface 4 a) of the protruding portion 4 positioned between the sample support portion 3 and the held portion 5 are parallel to the tip surface 2. Moreover, the diameter of the columnar sample support part 3 is about 20-30 micrometers.

以上、図４を用いて試料台１を説明した。次に、この試料台１がセットされる試料ホルダを図５を用いて説明する。図５において、図５(a)は試料ホルダ６の正面図であり、図５(b)は試料ホルダ６の上面図（図５(a)のＢ側から見た図）であり、図５(c)は試料ホルダ６の側面図（図５(a)のＣ側から見た図）である。   The sample table 1 has been described above with reference to FIG. Next, a sample holder on which the sample stage 1 is set will be described with reference to FIG. 5, FIG. 5 (a) is a front view of the sample holder 6, and FIG. 5 (b) is a top view of the sample holder 6 (viewed from the B side in FIG. 5 (a)). (c) is a side view of the sample holder 6 (viewed from the C side in FIG. 5 (a)).

試料ホルダ６の外形は、四角錐の上部をその底面に平行に切り落とした形状となっており、試料ホルダ６の上面６ａは水平状態にある。また、試料ホルダ６の側面６ｂは、水平面に対して７０°傾斜している。   The outer shape of the sample holder 6 is a shape obtained by cutting off the upper part of the quadrangular pyramid parallel to the bottom surface thereof, and the upper surface 6a of the sample holder 6 is in a horizontal state. Further, the side surface 6b of the sample holder 6 is inclined by 70 ° with respect to the horizontal plane.

試料ホルダ６には、第１保持部である第１の穴７と、第２保持部である第２の穴８が開けられている。第１の穴７は、図５(ａ)に示すように、試料ホルダ上面６ａから鉛直方向に開けられた丸穴である。一方、第２の穴８は、試料ホルダ側面６ｂ側から試料ホルダ側面６ｃ側に貫通する真っすぐな丸穴である。この第２の穴８は前記第１の穴７とつながっており、第２の穴８は第１の穴７に対して７０°傾斜している。また、第１の穴７と第２の穴８の直径は、前記試料台１の被保持部５の直径よりも少しだけ大きく形成されており、被保持部５を穴７又は８に差し込んでセットできるようになっている。   The sample holder 6 is provided with a first hole 7 as a first holding part and a second hole 8 as a second holding part. As shown in FIG. 5A, the first hole 7 is a round hole opened in the vertical direction from the sample holder upper surface 6a. On the other hand, the second hole 8 is a straight round hole penetrating from the sample holder side surface 6b side to the sample holder side surface 6c side. The second hole 8 is connected to the first hole 7, and the second hole 8 is inclined by 70 ° with respect to the first hole 7. Further, the diameters of the first hole 7 and the second hole 8 are formed to be slightly larger than the diameter of the held portion 5 of the sample stage 1, and the held portion 5 is inserted into the hole 7 or 8. It can be set.

また、図５において６ｄは取付台であり、この取付台６ｄは、後述するＥＢＳＤ装置の試料ステージに取り付けられる部分である。   In FIG. 5, reference numeral 6d denotes a mounting base, and this mounting base 6d is a portion that is attached to a sample stage of an EBSD device to be described later.

以上、図５を用いて試料ホルダ６を説明した。この試料ホルダ６と図４の試料台１とで、本発明における試料保持装置９が形成される。   The sample holder 6 has been described above with reference to FIG. The sample holder 6 and the sample stage 1 in FIG. 4 form a sample holding device 9 in the present invention.

次に、試料台１を試料ホルダ６にセットし、上述した１０μｍ×１０μｍ×１０μｍ程度の試料を試料台１の先端面２に固定することについて説明する。   Next, setting the sample stage 1 on the sample holder 6 and fixing the above-described sample of about 10 μm × 10 μm × 10 μm to the front end surface 2 of the sample stage 1 will be described.

まずオペレータは、図６に示すように、試料台１の被保持部５を第１の穴７に差し込む。すると、試料台１の突出部４が試料ホルダ上面６ａで受け止められて試料台１は試料ホルダ６に保持される。第１の穴７は試料ホルダ６の上面６ａから鉛直方向に延びた穴なので、棒状の試料台１は垂直に立って保持される。この時、試料台１の先端面２は水平状態となる。   First, the operator inserts the held portion 5 of the sample stage 1 into the first hole 7 as shown in FIG. Then, the protrusion 4 of the sample stage 1 is received by the sample holder upper surface 6 a and the sample stage 1 is held by the sample holder 6. Since the first hole 7 is a hole extending in the vertical direction from the upper surface 6a of the sample holder 6, the rod-shaped sample table 1 is held in a vertical position. At this time, the front end surface 2 of the sample stage 1 is in a horizontal state.

こうして試料台１を試料ホルダ６の第１の穴７に差し込むと、次にオペレータは、その試料ホルダを図６に示すようにガラスプローブ付光学顕微鏡下に配置する。このガラスプローブ付光学顕微鏡は、鉛直方向に焦点を合わせられる光学顕微鏡１１と、ガラスプローブ１２をＸ，Ｙ，Ｚ方向に移動させることができるマニピュレータ（図示せず）とを備えている。そして、ガラスプローブ１２先端には、試料１３が静電気によってトラップされている。この試料１３は集束イオンビーム加工装置によって試料母材から小さく切り出されたものであり、その大きさは、上述したように１０μｍ×１０μｍ×１０μｍ程度である。この大きさは、その試料全域を集束イオンビーム加工装置によるビームスキャンで一度に加工できる大きさである。   When the sample stage 1 is thus inserted into the first hole 7 of the sample holder 6, the operator next places the sample holder under the optical microscope with a glass probe as shown in FIG. This optical microscope with a glass probe includes an optical microscope 11 that is focused in the vertical direction, and a manipulator (not shown) that can move the glass probe 12 in the X, Y, and Z directions. A sample 13 is trapped by static electricity at the tip of the glass probe 12. This sample 13 is cut out from a sample base material by a focused ion beam processing apparatus, and its size is about 10 μm × 10 μm × 10 μm as described above. This size is such that the entire sample can be processed at once by beam scanning by a focused ion beam processing apparatus.

オペレータは、光学顕微鏡１１で像を観察しながらマニピュレータを操作し、ガラスプローブ１２先端に保持されている試料１３の固定面１３ｂを試料台１の先端面２に固定する。この時、先端面２には予めエポキシ樹脂が塗布されており、また、試料１３はその固定面１３ｂが水平状態となるようにプローブ先端に保持されていたので、試料１３はプローブから離れて、その固定面１３ｂは水平状態にある先端面２に容易に固定される。また、このように先端面２は水平状態にあるので、その直上に配置された光学顕微鏡１の焦点を先端面２に合わせることも容易である。   The operator operates the manipulator while observing the image with the optical microscope 11, and fixes the fixing surface 13 b of the sample 13 held at the tip of the glass probe 12 to the tip surface 2 of the sample stage 1. At this time, an epoxy resin is applied to the tip surface 2 in advance, and the sample 13 is held at the tip of the probe so that the fixed surface 13b is in a horizontal state. The fixing surface 13b is easily fixed to the distal end surface 2 in a horizontal state. Further, since the tip surface 2 is in a horizontal state in this way, it is easy to focus the tip of the optical microscope 1 disposed immediately above the tip surface 2.

以上、図６を用いて、試料１３を試料台１の先端面２に固定することについて説明した。   The fixing of the sample 13 to the tip surface 2 of the sample stage 1 has been described above with reference to FIG.

こうして試料１３が試料台１に固定されると、次にオペレータは、図７に示すように、試料１３を固定した試料台１を第１の穴７から抜いて、試料ホルダ側面６ｂ側からＥＢＳＤ測定用の第２の穴８に差し込む。試料台１の突出部４は試料ホルダ側面６ｂで受け止められ、試料台１は試料ホルダ６に保持される。また、試料台１は、第１の穴７から嵌め込まれたネジ（固定部材）１５によって試料ホルダ６に強固に固定される。これにより、後方散乱電子回折パターンを得る際に振動やずれの影響を少なくできる。この保持状態においては、先端面２は、水平面１４に対して７０°傾斜した状態となる。また、試料１３の解析面１３ａは前記固定面１３ｂと平行になるように集束イオンビーム加工装置によって切り出されているので、試料解析面１３ａは先端面２に平行となる。したがって、試料解析面１３ａは、水平面１４に対して７０°傾斜した状態となる。   When the sample 13 is fixed to the sample table 1 in this way, the operator next removes the sample table 1 to which the sample 13 is fixed from the first hole 7 as shown in FIG. Insert into the second hole 8 for measurement. The protrusion 4 of the sample stage 1 is received by the sample holder side surface 6 b, and the sample stage 1 is held by the sample holder 6. Further, the sample stage 1 is firmly fixed to the sample holder 6 by screws (fixing members) 15 fitted from the first holes 7. Thereby, when obtaining a backscattered electron diffraction pattern, the influence of vibration and deviation can be reduced. In this holding state, the front end surface 2 is inclined by 70 ° with respect to the horizontal plane 14. Further, since the analysis surface 13a of the sample 13 is cut out by the focused ion beam processing apparatus so as to be parallel to the fixed surface 13b, the sample analysis surface 13a is parallel to the tip surface 2. Therefore, the sample analysis surface 13a is inclined by 70 ° with respect to the horizontal plane 14.

このように本発明の試料保持装置９を用いれば、試料台１を第１の穴７から第２の穴８に差し換えるだけの作業で、試料１３の解析面１３ａをＥＢＳＤ測定に最適な７０°に設定できる。   As described above, when the sample holding device 9 of the present invention is used, the analysis surface 13a of the sample 13 can be optimized for EBSD measurement by simply replacing the sample stage 1 from the first hole 7 to the second hole 8. Can be set to °.

以上のようにして試料台１がＥＢＳＤ測定用の第２の穴８にセットされると、オペレータは、試料台１を保持した試料ホルダ６を図８に示すＥＢＳＤ装置（試料解析装置）１６の試料ステージ２７にセットする。ＥＢＳＤ装置１６は、電子線２０を鉛直方向に照射する電子線照射手段１９と、イオンビーム２２を照射するイオンビーム照射手段２１と、後方散乱電子２４を検出する検出手段であるＥＢＳＤ検出器２３と、これらの手段を制御する制御装置２５と、検出結果を表示するモニタ２６と、試料室チャンバ１７内の試料室１８を排気する真空ポンプ（図示せず）を備えている。   When the sample stage 1 is set in the second hole 8 for EBSD measurement as described above, the operator attaches the sample holder 6 holding the sample stage 1 to the EBSD apparatus (sample analysis apparatus) 16 shown in FIG. Set on the sample stage 27. The EBSD device 16 includes an electron beam irradiation unit 19 that irradiates an electron beam 20 in a vertical direction, an ion beam irradiation unit 21 that irradiates an ion beam 22, and an EBSD detector 23 that is a detection unit that detects backscattered electrons 24. A control device 25 for controlling these means, a monitor 26 for displaying the detection result, and a vacuum pump (not shown) for exhausting the sample chamber 18 in the sample chamber 17 are provided.

このようなＥＢＳＤ装置１６において、鉛直方向に光軸を持つ電子線照射手段１９から電子線２０が試料１３の解析面１３ａに照射される。上述したように、解析面１３ａの水平面からの角度はＥＢＳＤ測定に最適な７０°に設定されている。すなわち、電子線２０が解析面１３ａに入射する角度は最適な２０°である。このため、試料ステージ２７の傾斜調整を行わなくても、試料解析面１３ａから放出される後方散乱電子２４の後方散乱電子回折パターンをＥＢＳＤ検出器２３で検出するだけで良好な後方散乱電子回折パターンを得てモニタ２６に表示させることができる。   In such an EBSD device 16, the electron beam 20 is irradiated onto the analysis surface 13 a of the sample 13 from the electron beam irradiation means 19 having an optical axis in the vertical direction. As described above, the angle of the analysis surface 13a from the horizontal plane is set to 70 °, which is optimal for EBSD measurement. That is, the angle at which the electron beam 20 is incident on the analysis surface 13a is an optimal 20 °. Therefore, an excellent backscattered electron diffraction pattern can be obtained by simply detecting the backscattered electron diffraction pattern of the backscattered electrons 24 emitted from the sample analysis surface 13a with the EBSD detector 23 without adjusting the inclination of the sample stage 27. Can be obtained and displayed on the monitor 26.

また、試料解析面１３ａをイオンビーム加工して試料の３次元情報を取得する場合には、
イオンビーム照射手段２１からのイオンビーム２２が試料解析面１３ａに照射され、解析面１３ａは繰り返しスライス加工される。この時、上述したように、試料解析面１３ａの大きさは１度のイオンビームスキャンでその全域が加工される大きさとなっているので、従来のような段差がイオンビーム加工によって解析面１３ａに生じることはない。 When the sample analysis surface 13a is ion beam processed to acquire three-dimensional information of the sample,
The ion beam 22 from the ion beam irradiation means 21 is irradiated to the sample analysis surface 13a, and the analysis surface 13a is repeatedly sliced. At this time, as described above, since the size of the sample analysis surface 13a is such that the entire region is processed by one ion beam scan, a conventional step is formed on the analysis surface 13a by ion beam processing. It does not occur.

そして、スライス加工する毎に加工面の後方散乱電子回折パターンが取得され、制御装置２５は、取得した結晶方位情報に基づいて３次元情報を取得する。上述したように本発明では解析面１３ａに段差は生じないので、加工面からの後方散乱電子は何物にも遮られることなくＥＢＳＤ検出器２３で検出され、制御装置２５は良好な３次元結晶方位情報を得ることができる。   Then, each time the slice processing is performed, a backscattered electron diffraction pattern of the processed surface is acquired, and the control device 25 acquires three-dimensional information based on the acquired crystal orientation information. As described above, in the present invention, since no step is generated on the analysis surface 13a, backscattered electrons from the processing surface are detected by the EBSD detector 23 without being obstructed by anything, and the control device 25 has a good three-dimensional crystal. Direction information can be obtained.

また、本発明の試料台１を用いれば、図３に示したようなピラー状試料を作製する手間が省かれる。   Further, if the sample stage 1 of the present invention is used, the labor for producing the pillar-shaped sample as shown in FIG. 3 can be saved.

１…試料台
２…先端面
３…試料支持部
４…突出部
５…被保持部
６…試料ホルダ
６ａ…試料ホルダ上面
６ｂ…試料ホルダ側面
６ｃ…試料ホルダ側面
６ｄ…取付台
７…第１の穴
８…第２の穴
９…試料保持装置
１１…光学顕微鏡
１２…ガラスプローブ
１３…試料
１３ａ…解析面
１３ｂ…固定面
１４…水平面
１５…ネジ
１６…ＥＢＳＤ装置
１７…試料室チャンバ
１８…試料室
１９…電子線照射手段
２０…電子線
２１…イオンビーム照射手段
２２…イオンビーム
２３…ＥＢＳＤ検出器
２４…後方散乱電子
２５…制御装置
２６…モニタ
２７…試料ステージ DESCRIPTION OF SYMBOLS 1 ... Sample stand 2 ... Front end surface 3 ... Sample support part 4 ... Projection part 5 ... Held part 6 ... Sample holder 6a ... Sample holder upper surface 6b ... Sample holder side surface 6c ... Sample holder side surface 6d ... Mounting stand 7 ... First Hole 8 ... Second hole 9 ... Sample holder 11 ... Optical microscope 12 ... Glass probe 13 ... Sample 13a ... Analysis surface 13b ... Fixed surface 14 ... Horizontal surface 15 ... Screw 16 ... EBSD device 17 ... Sample chamber chamber 18 ... Sample chamber DESCRIPTION OF SYMBOLS 19 ... Electron beam irradiation means 20 ... Electron beam 21 ... Ion beam irradiation means 22 ... Ion beam 23 ... EBSD detector 24 ... Backscattered electrons 25 ... Controller 26 ... Monitor 27 ... Sample stage

Claims (7)

後方散乱電子回折を利用して結晶性試料の方位解析を行うときに用いられる試料台であって、試料取り付け面を有する試料台と、
前記試料台を保持するための第１および第２の保持部を有する試料ホルダと
を備えた試料保持装置であり、
前記試料台が前記第１保持部に保持されたときには前記試料取り付け面が水平状態となり、前記試料台が前記第２保持部に保持されたときには前記試料取り付け面が水平状態から所定角度傾いた状態となるように構成されている
ことを特徴とする試料保持装置。 A sample stage used when analyzing the orientation of a crystalline sample using backscattered electron diffraction, the sample stage having a sample mounting surface;
A sample holding device comprising a sample holder having first and second holding portions for holding the sample stage,
When the sample stage is held by the first holding unit, the sample mounting surface is in a horizontal state, and when the sample stage is held by the second holding unit, the sample mounting surface is inclined at a predetermined angle from the horizontal state. It is comprised so that it may become. The sample holding device characterized by the above-mentioned. 前記試料台は、先端面で試料を支持する棒状の試料台であり、試料取り付け面である前記先端面は、試料台の長手方向に垂直な端面であることを特徴とする請求項１記載の試料保持装置。   2. The sample stage according to claim 1, wherein the sample stage is a rod-shaped sample stage that supports a sample on a tip surface, and the tip surface that is a sample mounting surface is an end surface perpendicular to the longitudinal direction of the sample table. Sample holder. 前記第１保持部は、前記棒状の試料台が差し込まれる第１の穴であって、鉛直方向に延びる第１の穴であり、
前記第２保持部は、前記棒状の試料台が差し込まれる第２の穴であって、前記第１の穴に対して所定角度傾いた第２の穴であり、
前記棒状の試料台が前記第１の穴に差し込まれたときには前記棒状の試料台が垂直に立って前記先端面が水平状態となり、前記棒状の試料台が前記第２の穴に差し込まれたときには前記先端面が水平状態から前記所定角度傾いた状態となる
ことを特徴とする請求項２記載の試料保持装置。 The first holding part is a first hole into which the rod-shaped sample table is inserted, and is a first hole extending in a vertical direction.
The second holding part is a second hole into which the rod-shaped sample table is inserted, and is a second hole inclined at a predetermined angle with respect to the first hole,
When the rod-shaped sample table is inserted into the first hole, the rod-shaped sample table stands vertically and the tip surface is in a horizontal state, and when the rod-shaped sample table is inserted into the second hole The sample holding device according to claim 2, wherein the tip end surface is inclined at the predetermined angle from a horizontal state. 前記第１の穴と前記第２の穴はつながっており、
前記第１の穴に嵌め込まれる固定部材を更に有しており、
前記第２の穴に差し込まれた試料台は、前記固定部材によって試料ホルダに固定される
ことを特徴とする請求項３記載の試料保持装置。 The first hole and the second hole are connected,
A fixing member that is fitted into the first hole;
The sample holder according to claim 3, wherein the sample stage inserted into the second hole is fixed to the sample holder by the fixing member. 前記所定角度は７０°であることを特徴とする請求項１または３記載の試料保持装置。   4. The sample holding device according to claim 1, wherein the predetermined angle is 70 degrees. 試料室に配置され、前記試料台が前記第２保持部に保持された請求項５記載の試料保持装置と、
鉛直方向の光軸を有し、前記試料台に取り付けられた試料に電子線を照射する電子線照射手段と、
前記試料に電子線を照射することによって得られる後方散乱電子回折パターンを検出する検出手段と
を備えたことを特徴とする試料解析装置。 The sample holding device according to claim 5, wherein the sample holding device is disposed in a sample chamber, and the sample stage is held by the second holding unit;
An electron beam irradiating means having a vertical optical axis and irradiating the sample mounted on the sample stage with an electron beam;
A sample analyzing apparatus comprising: a detecting means for detecting a backscattered electron diffraction pattern obtained by irradiating the sample with an electron beam. 前記試料にイオンビームを照射して試料を加工するイオンビーム照射手段を更に備えたことを特徴とする請求項６記載の試料解析装置。   7. The sample analyzer according to claim 6, further comprising ion beam irradiation means for processing the sample by irradiating the sample with an ion beam.
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