JP2013213269A - Film forming method and storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film forming method of a Co-containing film excellent in smoothness, the carbon content in the film being small.SOLUTION: A film forming method for a cobalt-containing film includes: a step of storing an object to be processed in a processing chamber 1; and a step where a cobalt material that contains cyclopentane and an oxygen gas is introduced, in vapor phases, into the processing chamber in an atmosphere that does not contain a hydrogen gas and an ammonia gas. The oxygen partial pressure within the processing chamber is from 10 Pa to 40 Pa inclusive.

Description

  The present invention relates to a film forming method for forming a film containing metal cobalt (Co) on a substrate and a storage medium storing a program for executing the film forming method.

  A multilayer wiring structure of a semiconductor device is usually formed by embedding a metal cylinder (Cu) wiring in an interlayer insulating film groove by electrolytic plating or the like. Co may be used as a seed for Cu wiring by electrolytic plating from the viewpoint of improving embedding.

In addition, CoSi _x formed after forming a Co film or the like into a contact with silicon (Si) to a source / drain electrode and a gate electrode in a MOS type semiconductor may be used.

  As a method for forming the Co film, a thermal decomposition reaction of a source gas containing Co, a chemical vapor deposition (CVD) method for forming a Co film by a reduction reaction of the source gas with a reducing gas, or the like is used. (For example, patent document 1).

JP 2011-63848 A

  However, the method of Patent Document 1 uses a raw material containing amidinate, and there is a problem of deterioration of smoothness due to Co aggregation or the like.

  Film formation by CVD or atomic layer deposition (ALD) using a raw material containing cyclopentadiene (Cp) has a relatively high vapor pressure of the raw material gas and has an advantage in terms of raw material supply, but the resulting film There was a problem that carbon derived from the raw material remained therein and hindered subsequent silicidation.

  The present invention has been made in view of such circumstances, and is a method for forming a Co-containing film by CVD or ALD using a raw material containing Cp, which is excellent in smoothness and has a low carbon content in the film. An object of the present invention is to provide a method for forming a Co-containing film.

Storing the object to be processed in the processing container;
Introducing a cobalt raw material containing cyclopentane and oxygen gas in a gas phase state in an atmosphere not containing hydrogen gas and ammonia gas into the processing vessel;
Including
The oxygen partial pressure of the processing container is 10 Pa or more and 40 Pa or less,
A method for forming a cobalt-containing film is provided.

  According to the present invention, it is possible to provide a method for forming a Co-containing film that has excellent smoothness and a low carbon content in the film.

FIG. 1 is a schematic configuration diagram of an example of a vacuum film forming apparatus that can implement the method for forming a Co-containing film according to the present invention. FIG. 2 is an example of the results of XRD analysis of the Co-containing film obtained in this embodiment. FIG. 3 is an example of an SEM photograph for explaining the smoothness of the film forming method of the present embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

≪Film deposition system≫
Next, an example of a film forming apparatus capable of performing the film forming method of the present invention will be described. Here, a case where a Co-containing film is formed on a semiconductor wafer as an object to be processed will be described, but the present invention is not limited in this respect.

  FIG. 1 shows a schematic configuration diagram of an example of a vacuum film forming apparatus that can implement the method for forming a Co-containing film of the present invention.

  The film forming apparatus 100 includes a processing container 1 formed into a cylindrical shape or a box shape from, for example, aluminum. In the processing container 1, a mounting table 2 on which a semiconductor wafer W as a substrate to be processed is mounted is provided. The mounting table 2 is made of a carbon material such as a graphite plate or a graphite plate covered with SiC having a thickness of about 1 mm, ceramics having excellent thermal conductivity such as aluminum nitride, and the like.

  On the outer peripheral side of the mounting table 2, a cylindrical partition wall 3 made of, for example, aluminum is formed standing from the bottom of the processing container 1. The mounting table 2 is supported by one or more, for example, three (two examples are shown in FIG. 1) support arms 4 extending from the upper inner wall of the partition wall 3.

  Below the mounting table 2, one or more, for example, three (two examples are shown in FIG. 1) L-shaped lifter pins 5 are provided so as to protrude upward from the ring-shaped support member 6. The support member 6 can be moved up and down by a lifting rod 7 provided penetrating from the bottom of the processing container 1.

  A clamp ring member 8 is provided on the periphery of the mounting table 2 in order to fix the semiconductor wafer W to the mounting table 2 while holding the peripheral edge of the semiconductor wafer W. The clamp ring member 8 is formed of a substantially ring-shaped ceramic along the contour shape of the semiconductor wafer W, for example, ceramic such as aluminum nitride. The clamp ring member 8 is connected to the support member 6 via a connecting rod 9 and is moved up and down integrally with the lifter pin 5. The lifter pins 5 and the connecting rods 9 are formed of ceramics such as alumina, for example.

    A transmission window 10 made of a heat ray transmitting material such as quartz is airtightly provided immediately below the mounting table 2 at the bottom of the processing container 1. Further below, a box-shaped heating chamber 11 is provided so as to surround the transmission window 10. In the heating chamber 11, a plurality of heating lamps 12 are attached as a heating means to a turntable 13 that also serves as a reflecting mirror. The turntable 13 is rotated by a rotary motor 14 provided at the bottom of the heating chamber 11 via a rotating shaft. The heat rays emitted by the heating lamp 12 pass through the transmission window 10 and irradiate the lower surface of the mounting table 2 to heat it.

  An exhaust port 15 is provided at the peripheral edge of the bottom of the processing container 1, and an exhaust pipe 16 connected to a vacuum pump (not shown) is connected to the exhaust port 15. By exhausting through the exhaust port 15 and the exhaust pipe 16, the inside of the processing container 1 can be maintained at a predetermined degree of vacuum. Further, a loading / unloading port 17 for loading / unloading the semiconductor wafer W and a gate valve 18 for opening / closing the loading / unloading port 17 are provided on the side wall of the processing chamber 1.

  A shower head 20 for introducing source gas or the like into the processing container 1 is provided on the ceiling of the processing container 1 facing the mounting table 2. The shower head 20 is made of aluminum or the like, for example, and has a disk-shaped head body having a space 21a inside. A gas inlet 22 is provided in the ceiling of the head body 21. A processing gas supply mechanism 30 that supplies a processing gas necessary for forming the Co-containing film is connected to the gas introduction port 22 by a pipe 31.

  A large number of gas injection holes 23 for discharging the gas supplied into the head main body 21 to the processing space in the processing container 1 are arranged over the entire surface at the bottom of the head main body 21. Gas can be released over the entire surface. A diffusion plate 24 having a large number of gas dispersion holes 25 is disposed in the space 21 a in the head main body 21, and gas can be supplied more evenly to the surface of the semiconductor wafer W. Further, cartridge heaters 26 and 27 for temperature adjustment are installed in the side wall of the processing container 1 and the side wall of the shower head 20. With the cartridge heaters 26 and 27, the side wall in contact with the source gas and the shower head can be maintained at a predetermined temperature.

The processing gas supply mechanism 30 has a Co raw material storage unit 32 that stores Co raw materials described later. The processing gas supply mechanism 30 also includes a pressure adjusting gas supply source 34 for supplying a dilution gas such as argon gas for diluting the gas in the processing container 1 for pressure adjustment, and O ₂ 5% as a reaction gas. A diluted O ₂ gas supply source 36 for supplying Ar dilution gas. In FIG. 1, an H ₂ gas supply source 35 that supplies hydrogen (H ₂ ) gas and ammonia (NH ₃ ) gas, which are reaction gases used in the comparative example, for the purpose of explaining a comparative example to be described later. shows a configuration having a NH ₃ gas supply source 33 nH ₃ gas supply source 33, a.

In the middle of a pipe 31 connected to the shower head 20 and extending from the pressure adjusting gas supply source 34, a pipe 38 extending from the Co raw material reservoir 32, a pipe 39 extending from the diluted O ₂ gas supply source 36, and an H ₂ gas supply source A pipe 40 extending from 35 and a pipe 41 extending from the NH ₃ gas supply source 33 are connected.

The NH ₃ gas supply source 33 is provided with a mass flow controller (MFC) 42 as a flow rate controller and open / close valves 43 and 44 before and after the mass flow controller (MFC) 42. The pressure adjusting gas supply source 34 is provided with a mass flow controller (MFC) 45 as a flow rate controller, and opening / closing valves 46 and 47 before and after the mass flow controller (MFC) 45. The H ₂ gas supply source 35 is provided with a mass flow controller (MFC) 48 as a flow rate controller and open / close valves 49 and 50 before and after the mass flow controller (MFC) 48. The dilution O ₂ gas supply source 36 is provided with a mass flow controller (MFC) 51 as a flow rate controller and open / close valves 52 and 53 before and after the mass flow controller (MFC) 51.

  A carrier gas supply source 37 that supplies a carrier gas for bubbling of Ar or the like is connected to the Co raw material storage unit 32 via a pipe 54. The pipe 54 is provided with a mass flow controller (MFC) 55 as a flow rate controller and open / close valves 56 and 57 before and after the mass flow controller (MFC) 55.

  The Co raw material storage unit 32 is provided with a heater 58. The Co raw material stored in the Co raw material storage unit 32 is supplied into the processing container 1 by bubbling, for example, while being heated by the heater 58. In order to supply the Co raw material in a vaporized state, the piping to the processing container 1 and the mass flow controller are usually provided with a heater (not shown).

Although FIG. 1 shows a configuration in which the Co raw material is supplied by bubbling, a configuration in which the raw material is supplied using a mass flow controller may be used. Moreover, the structure which sends the raw material of a liquid state to a vaporizer by carrying out flow control with a liquid mass flow controller, and vaporizes and supplies there may be sufficient. Further, the raw material gas, dilution gas, diluted O ₂ gas, an example of introducing from one pipe 31 to the shower head 20, the present invention is not limited to this structure.

  As shown in FIG. 1, the pipe 38 and the pipe 54 are connected via an open / close valve 59. In addition, an opening / closing valve 60 is provided on the side of the Co raw material reservoir 32 with respect to the opening / closing valve 59 of the piping 54, and an opening / closing valve 61 on the side of the Co raw material storage portion 32 of the piping 38 with respect to the opening / closing valve 59. Is provided. When supplying the Co raw material by the bubbling method, the opening / closing valve 59 is closed and the opening / closing valves 60 and 61 are opened.

  The film forming apparatus 100 includes a process controller 70 including a microprocessor (computer), and each component of the film forming apparatus 100 is controlled by the process controller 70. Further, the process controller 70 is connected to a user interface 71 including a display or the like on which an operator visualizes and displays the operation status of each component of the film forming apparatus 100. Further, the process controller 70 has a control program for realizing various processes executed by the film forming apparatus 100 and a control for causing each component of the film forming apparatus 100 to execute a predetermined process according to the processing conditions. A storage unit 72 that stores a program (that is, a processing recipe) and various databases is connected. The processing recipe is stored in a storage medium (not shown) in the storage unit 72. The storage medium may be fixedly provided, such as a hard disk, or may be a portable medium such as a CDROM, DVD, flash memory or the like. Moreover, the structure which transmits a recipe suitably from another apparatus via a dedicated line, for example may be sufficient.

  If necessary, a predetermined processing recipe is called from the storage unit 72 by an instruction from the user interface 71 and the like, and is executed by the process controller 70, thereby performing a desired process in the film forming apparatus 100.

≪Film formation method≫
Next, an example of a method for forming a Co-containing film will be described. As described above, the Co-containing film of the present invention can be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD). First, the Co raw material and the raw material gas in the film forming method according to the present invention will be described.

(Co raw material)
First, a Co raw material (also referred to as a precursor or a precursor) for forming a Co-containing film using CVD will be described.

The Co raw material that can be used in the present embodiment is not particularly limited as long as it is a Co raw material containing cyclopentadiene (Cp). Specifically, a compound represented by the following general formula (1) can be used.
(R ₁ -Cp) (R ₂ -Cp) Co (1)
(In General Formula (1), R ₁ and R ₂ are each independently a methyl group, an ethyl group, or a hydrogen atom.)
(Raw material gas and other gases)
In this embodiment, oxygen gas (in this embodiment, O ₂ 5% Ar dilution gas is used from the viewpoint of ease of handling, etc.) is used as the source gas. By using the above Co raw material and O ₂ gas, the CVD reaction proceeds and metal Co can be obtained. Although details of the reaction formula in this reaction are not clarified, in addition to metal Co, various by-products (biproduct) containing metal Co, water vapor (H ₂ O), and the like are generated. it is conceivable that.

The content of O ₂ gas is preferably adjusted so that the oxygen partial pressure P _O2 in the system is 10 Pa or more and 40 Pa or less. At this time, as the pressure adjusting gas, for example, an inert gas such as Ar gas can be used. When the oxygen partial pressure _{P O2} in the system is less than 10 Pa, does not proceed CVD reaction, there is a metal Co can not be obtained. On the other hand, if the oxygen partial pressure P _O2 in the system exceeds 40 Pa, in some cases most of the resulting metal Co is oxidized by oxygen in the system, resulting in a cobalt oxide (CoO). By the oxygen partial pressure _{P O2} in the system is adjusted to be 10Pa or 40Pa or less is preferable because it is possible to obtain a (mixture of Co and CoO depending deposition conditions) metal Co.

Further, it is preferable that the CVD reaction proceed in an atmosphere in which hydrogen (H ₂ ) gas and ammonia (NH ₃ ) gas are not present. Although details are not clarified, when hydrogen (H ₂ ) gas and ammonia (NH ₃ ) gas are present in the system, the bond between Co atoms and other atoms in the Co raw material is not broken, and CVD is performed. The reaction may not proceed.

  The total pressure in the system is usually 2 kPa or less, preferably 1 kPa or less, although it depends on other film formation conditions (type of source gas, oxygen partial pressure, film formation temperature, film formation time, etc.). . When the total pressure in the system exceeds 2 kPa, it may be difficult to control the reaction. Although details are not clarified, it is experimentally shown that the lower the total pressure in the system, the more the equilibrium is inclined in the direction in which metallic Co is generated (that is, the obtained Co-containing film has a lower resistance). I know (see embodiments below).

  In addition, the reaction temperature in the CVD reaction is not particularly limited as long as it is a temperature at which Co raw material can be supplied as a gas and can be decomposed on the substrate, but it is usually preferably 300 ° C. to 600 ° C., preferably 400 ° C. to 500 ° C. More preferably, it is performed at a temperature of 410 ° C. to 460 ° C. In the range of film forming conditions in the present embodiment, a metal Co-containing film having a small specific resistance is obtained at a film forming temperature of 300 ° C. to 600 ° C., and a specific resistance is further increased at a film forming temperature of 410 ° C. to 460 ° C. A small metallic Co-containing film was obtained.

  In the case of forming a Co-containing film by CVD, first, the gate valve 18 is opened, and an object to be processed is introduced into the processing container 1 by a transfer device (not shown) and placed on the mounting table 2.

When the Co-containing film is used as a seed for Cu wiring by electrolytic plating, the object to be processed is usually formed by forming an underlying SiO _{x Cy} insulating film or organic insulating film on the surface of the wafer W. use. When used as a contact layer, the wafer W is usually used with a silicon substrate that becomes a source / drain electrode exposed or a polysilicon film formed on the surface.

Next, an inert gas such as Ar, N ₂ or the like is introduced as the dilution gas 55 into the processing apparatus 1 through the piping 31 and the shower head 20 while being controlled by the MFC 45, and the inside of the processing container is decompressed by an exhaust pump (not shown). Then, it is maintained at a predetermined film forming pressure.

Thereafter, a carrier gas (for example, Ar gas) is supplied through the pipe 54 to the Co raw material storage section 32 heated to, for example, 70 ° C. by the heater 58. The vapor of the Co raw material is introduced into the processing container 1 through the pipes 38 and 31 and the shower head 20 by bubbling. Further, as a reaction gas, O ₂ gas (O ₂ 5% Ar dilution gas in the embodiment) is introduced into the processing vessel 1 through the pipes 39 and 31 and the shower head 20 to form a Co-containing film. To start. Furthermore, depending on the film forming conditions, an inert gas (for example, Ar gas) of the dilution gas 34 is introduced into the processing vessel 1 through the pipe 31 and the shower head 20 while adjusting the flow rate with the MFC 45 as a pressure adjusting gas. The pressure in the processing apparatus during film formation and the partial pressure of various gases are adjusted.

In addition, as a film-forming sequence, the case of normal CVD which supplies Co raw material and reaction gas simultaneously was demonstrated. However, ALD that alternately supplies Co raw material and reaction gas may be used. In the case of using ALD, an inert gas purge may be sandwiched between the supply of the Co raw material and the reactive gas. For purging the inert gas, for example, by closing the on-off valves 60 and 61 and opening the on-off valve 59, the carrier gas (for example, Ar gas) is passed through the processing container 1 without passing through the Co raw material storage section 32. May be performed. Or it may be performed by supplying an inert gas (e.g., Ar or N ₂ gas) to the processing chamber 1 as a diluting gas. In addition, the purge process is performed after the Co-containing film is formed. Also in this purge process, the open / close valves 60 and 61 are closed and the open / close valve 59 is opened, so that the carrier gas is supplied to the Co raw material storage section 32. You may carry out by passing to the processing container 1 without letting it pass. Or it may be performed by supplying an inert gas (e.g., Ar or N ₂ gas) to the processing chamber 1 as a diluting gas. In the purge after the film formation, the diluted O ₂ gas 36 may be circulated simultaneously in order to sufficiently advance the reaction.

  After the purge process is completed, the gate valve 18 is opened and the object to be processed is carried out by a transfer device (not shown).

  As described above, the method for forming a Co-containing film described above uses a Co source gas containing Cp. Since the Co source gas containing Cp has a higher vapor pressure than the Co source gas containing conventional amidinate, it is suitable for film formation by CVD or ALD. In addition, the film forming method of the present embodiment has a low carbon content in the obtained cobalt. Therefore, when used as a contact layer, it can be easily silicided after forming a Co-containing film on the surface of the silicon substrate or the surface of the polysilicon film as described above. Furthermore, the film forming method of this embodiment is a Co-containing film that is less likely to cause Co agglomeration, has small crystal grains, and is excellent in smoothness as compared with a film forming method that uses a Co source gas containing a conventional amidinate. Can be obtained.

<< First Embodiment >>
Next, an embodiment that demonstrates the effects of the present invention will be described.

In the present embodiment, for the sake of simplicity, a horizontal quartz reaction tube is used instead of the processing apparatus 1 and the shower head 20 of FIG. As the quartz tube, an inner quartz tube whose inside is a reaction field and an outer quartz tube covering the inner quartz tube are used. Between the outer quartz tube and the inner quartz tube, 20 sccm nitrogen ( N ₂ ) gas was flowed. A heater capable of applying a temperature gradient in the axial direction of the quartz tube was installed outside the outer quartz tube. Except for using the above-described horizontal quartz reaction tube instead of the processing apparatus 1 and the shower head 20, the supply method and the exhaust method of the processing gas such as the raw material gas and the carrier gas have the same principle as the above-described FIG. It was used.

  Two 10 mm × 120 mm wafers were placed in series on the inner quartz tube so that the 120 mm side coincided with the axial direction of the heater, and heated by the heater from the outside. The temperature of the wafer is measured by measuring the temperature in the inner quartz tube for each 10 mm zone along the heater axial direction, and the temperature is taken as the wafer temperature (that is, the temperature varies along the heater axial direction). The wafer, quartz reaction tube and heater were installed so that 24 zones were formed).

As the Co raw material, (Me—Cp) ₂ Co (Me is a methyl group and Cp is cyclopentadiene) was used. Further, the Co raw material was supplied by a bubbling method by flowing Ar gas (carrier gas) at a predetermined flow rate into a Co raw material reservoir (bottle) heated to 70 ° C.

  Next, by supplying a predetermined source gas and a pressure adjusting gas at a predetermined flow rate, the CVD reaction was allowed to proceed for a predetermined film formation time to form a Co-containing film. The total pressure in the system was adjusted by installing a valve on the exhaust side and controlling the operation of this valve.

As a reaction gas, an O ₂ 5% Ar diluted gas was used as an example, and as a comparative example, a mixed gas of H ₂ gas, NH ₃ gas, and H ₂ gas and O ₂ 5% Ar diluted gas was used.

  Detailed film formation conditions are shown in Table 1.

The obtained thin film was evaluated for film formation by visually confirming the presence or absence of coloring derived from metal Co. In some examples, the film formation state was confirmed by the presence or absence of a peak derived from Co using an X-ray diffractometer (XRD). Furthermore, the sheet resistance of each zone of the obtained thin film was measured by a four-terminal method. Furthermore, the film thickness of the obtained thin film was obtained by SEM, and the specific resistance was obtained from the measured film thickness and sheet resistance. In addition, the sheet resistance, film thickness, and specific resistance in Table 1 are, as an example, specific resistance values and sheet resistance values in the zones where the minimum specific resistance is obtained in each example, and the corresponding film formation temperatures. As a reference.

From Table 1, O ₂ 5% Ar dilution gas as the reaction gas is controlled so that the oxygen partial pressure P _O2 is in the range of 10 Pa or more and 40 Pa or less, and the film is formed in an atmosphere where H ₂ gas and NH ₃ gas do not exist. In this example, the coloration derived from the metal Co could be confirmed.

  FIG. 2 shows an example of the result of XRD analysis of the Co-containing film obtained in the present embodiment. 2A is an example of the results of XRD analysis of the Co-containing film obtained in the zone of 436 ° C. in Example 1, and FIG. 2B is the example 1 in which 459 It is an example of the result of the XRD analysis of the Co containing film | membrane obtained in the zone of ° C.

  As shown in FIG. 2, in the execution condition of Example 1, the Co-containing film obtained in the zone of 459 ° C. also showed a peak derived from CoO, but by the film forming method of the present embodiment, It was confirmed that metal Co could be formed.

  Table 1 shows a specific resistance value and a sheet resistance value in a zone where the minimum specific resistance is obtained and a film forming temperature corresponding to the specific resistance value in some examples. In Table 1, only values in some examples are shown, but in Example 1, the specific resistance (200 μohm) is lower than that in other zones in the embodiment of the film forming temperature of 430 ° C. to 460 ° C. In Example 2, in the embodiment of the film formation temperature of 410 ° C. to 440 ° C., the metal Co having a specific resistance (1000 μohm cm or less) lower than that of the other zones is obtained. A containing film was obtained.

  Moreover, it was found from the comparison between Example 1 and Example 2 that the Co-containing film having a lower specific resistance can be obtained in the embodiment having a lower total pressure.

And each of the examples, from the comparison between Comparative Examples 1, 2 and 6, as the reaction gas, when using the O 2 _5% Ar dilution gas and H ₂ gas, it was found that the film can not be formed of metal Co. This is thought to be due to the fact that the presence of H ₂ gas in the system caused the bond of Co atoms and other atoms in the Co raw material to not break and the CVD reaction did not proceed. Is under investigation.

And each of the examples, from the comparison with Comparative Example 3, if the oxygen partial pressure P _O2 is more than 40 Pa, it was found that the film can not be formed of metal Co. This is because the oxygen partial pressure in the system is too high, and a part or all of the obtained metal Co may be oxidized to become all CoO, but the details are under investigation.

From Comparative Examples 4, 5, and 7 to 9, it was found that when H ₂ gas or NH ₃ gas was used as the reaction gas, metal Co could not be formed. It is considered that this is also due to the fact that the presence of H ₂ gas in the system caused the bond of Co atoms and other atoms in the Co raw material to not break and the CVD reaction did not proceed.

  FIG. 3 shows an example of an SEM photograph for explaining the smoothness of the film forming method of the present embodiment. FIG. 3A is an example of an SEM photograph of the workpiece 200 having the Co-containing film 201 formed on the wafer 202 in the present embodiment (Example 2), and FIG. As a reference example, it is an example of the SEM photograph of the to-be-processed object 200 which formed Co containing film | membrane by CVD using Co raw material containing amidinate.

  As apparent from FIG. 3, it was found that the Co-containing film obtained by the film forming method of the present embodiment has small crystal grains and excellent smoothness as compared with the conventional method.

According to this embodiment, by using an oxygen gas as a Co raw material containing Cp and a reactive gas, controlling an oxygen partial pressure, and advancing a CVD reaction in an atmosphere in which no H ₂ gas and NH ₃ gas exist, A Co-containing film could be formed. However, the present invention is not limited to this embodiment, and can be formed by ALD, for example.

  Further, the film forming method of the present embodiment uses a Co source gas containing Cp having a higher vapor pressure than a Co source gas containing a conventional amidinate, and thus is suitable for film formation by CVD or ALD. .

  Furthermore, as compared with a film forming method using a Co raw material containing a conventional amidinate, the film forming method according to the present invention is less likely to cause Co aggregation and can provide a Co-containing film having excellent smoothness.

1 the processing chamber 2 table 20 the shower head 30 the processing gas supply mechanism 32 Co material reservoir 34 pressure control gas supply source 37 carrier gas supply source 36 dilution _{O 2} gas supply source 70 process controller 72 storage unit 100 deposition apparatus W semiconductor Wafer

Claims (5)

Storing the object to be processed in the processing container;
Introducing a cobalt raw material containing cyclopentane and oxygen gas in a gas phase state in an atmosphere not containing hydrogen gas and ammonia gas into the processing vessel;
Including
The oxygen partial pressure of the processing container is 10 Pa or more and 40 Pa or less,
A method for forming a cobalt-containing film. The cobalt raw material containing cyclopentane is
A compound represented by the general formula (R ₁ -Cp) (R ₂ -Cp) Co,
The method for forming a cobalt-containing film according to claim 1.
(In the general formula, R ₁ and R ₂ are each independently a methyl group, an ethyl group, or a hydrogen atom.)   3. The method for forming a cobalt-containing film according to claim 1, wherein in the introducing step, the temperature of the processing substrate is 410 ° C. or higher and 460 ° C. or lower.   4. The method for forming a cobalt-containing film according to claim 1, wherein in the introducing step, the total pressure in the processing chamber is 1 kPa or less. 5.   A storage medium that operates on a computer and stores a program for controlling a film forming apparatus, wherein the program performs the film forming method according to any one of claims 1 to 4 at the time of execution. And a storage medium that causes the computer to control the film forming apparatus.