JP2016065287A - Production method of semiconductor device, substrate treatment apparatus and program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technology capable of obtaining excellent in-plane film thickness uniformity in formation of a metal film.SOLUTION: A production method of a semiconductor device has a step for forming a film on a substrate by performing in prescribed number of times by time sharing, steps for: performing in prescribed number of times by time sharing, a step for supplying raw material gas to the substrate, and a step for supplying reaction gas to be reacted with the raw material gas to the substrate; and supplying processing gas having the same composition as a by-product formed by reacting the raw material gas with the reaction gas to the substrate.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a semiconductor device manufacturing method, a substrate processing apparatus, and a program.

  With the high integration and high performance of semiconductor devices such as MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), various types of metal films are used as electrodes and wirings. Among these, metal carbide-based or metal nitride-based metal films are often used from the viewpoint of oxidation resistance, electrical resistivity, work function, etc., for gate electrodes and DRAM (Dynamic Random Access Memory) capacitor electrodes ( Patent Document 1).

JP 2011-6783 A

  As the metal film, for example, a titanium nitride film (TiN film) is often used, but the formation of the film is hindered in the substrate surface due to the influence of by-products generated when the TiN film is formed. It may be difficult to obtain in-plane film thickness uniformity.

  An object of the present invention is to provide a technique capable of obtaining good in-plane film thickness uniformity in the formation of a metal film.

According to one aspect of the invention,
Supplying a source gas to the substrate;
Supplying a reactive gas that reacts with the source gas to the substrate;
Performing a predetermined number of times in a time-sharing manner,
Supplying a processing gas having the same composition as a by-product formed by reacting the source gas and the reaction gas to the substrate;
Is performed in a time-division manner for a predetermined number of times, thereby providing a method for manufacturing a semiconductor device having a step of forming a film on the substrate.

  ADVANTAGE OF THE INVENTION According to this invention, the technique which can obtain favorable in-plane film thickness uniformity in formation of a metal film can be provided.

It is a figure which shows the in-plane film thickness distribution of the film | membrane formed by the prior art. It is a schematic block diagram of the processing furnace of the substrate processing apparatus used suitably by embodiment of this invention, and is a figure which shows a processing furnace part with a longitudinal cross-sectional view. It is the sectional view on the AA line of FIG. It is a block diagram which shows the structure of the controller which the substrate processing apparatus shown in FIG. 1 has. It is a figure which shows the sequence in the 1st Embodiment of this invention. It is a figure which shows the film thickness ratio of the film | membrane formed by the prior art and this invention. It is a schematic block diagram of the processing furnace of the substrate processing apparatus used suitably by other embodiment of this invention, and is a figure which shows a processing furnace part with a longitudinal cross-sectional view. It is a schematic block diagram of the processing furnace of the substrate processing apparatus used suitably by other embodiment of this invention, and is a figure which shows a processing furnace part with a longitudinal cross-sectional view.

  Conventionally, for example, a TiN film, for example, is formed as a metal film by a method in which, for example, a titanium (Ti) -containing gas and a nitrogen (N) -containing gas are supplied to a substrate a predetermined number of times in a time division manner. However, as shown in FIG. 1, it can be seen that in the conventional method, the thickness of the outer peripheral portion of the substrate is increased. This is because the gas supply amount to the central portion of the substrate is small, whereas the gas supply amount is large at the outer peripheral portion of the substrate, and the influence of by-products generated by the reaction of the Ti-containing gas and the N-containing gas. Is considered to be caused by the fact that it is large at the center of the substrate but small at the outer periphery of the substrate. Therefore, as a result of extensive research, the inventors have solved this problem by supplying a processing gas having the same composition as the by-product generated by the reaction of the Ti-containing gas and the N-containing gas to the outer peripheral portion of the substrate. It has been found that the in-plane film thickness uniformity can be obtained by solving the problem.

<First Embodiment of the Present Invention>
Hereinafter, a preferred first embodiment of the present invention will be described with reference to FIGS. The substrate processing apparatus 10 is configured as an example of an apparatus used in a substrate processing process, which is a process of manufacturing a semiconductor device (device).

(1) Configuration of Processing Furnace The processing furnace 202 is provided with a heater 207 as a heating means (heating mechanism, heating system). The heater 207 is configured in a cylindrical shape whose upper side is closed.

Inside the heater 207, a reaction tube 203 constituting a reaction vessel (processing vessel) concentrically with the heater 207 is disposed. The reaction tube 203 is made of a heat-resistant material or the like (for example, quartz (SiO ₂ ) or silicon carbide (SiC)), and is formed in a cylindrical shape with the upper end closed and the lower end opened.

  A manifold 209 made of a metal material such as stainless steel is attached to the lower end of the reaction tube 203. The manifold 209 is formed in a cylindrical shape, and its lower end opening is airtightly closed by a seal cap 219 serving as a lid. O-rings 220 are provided between the reaction tube 203 and the manifold 209 and between the manifold 209 and the seal cap 219, respectively. A processing container is mainly constituted by the reaction tube 203, the manifold 209, and the seal cap 219, and a processing chamber 201 is formed inside the processing container. The processing chamber 201 is configured to be able to accommodate wafers 200 as substrates in a state where they are aligned in multiple stages in a vertical posture in a horizontal posture by a boat 217 described later.

  A rotation mechanism 267 that rotates the boat 217 is provided on the side of the seal cap 219 opposite to the processing chamber 201. A rotation shaft 255 of the rotation mechanism 267 passes through the seal cap 219 and is connected to the boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The boat elevator 115 is configured so that the boat 217 can be carried in and out of the processing chamber 201 by moving the seal cap 219 up and down. That is, the boat elevator 115 is configured as a transfer device (transfer mechanism) that transfers the boat 217, that is, the wafers 200 into and out of the processing chamber 201.

  The boat 217 as a substrate holder is configured to support a plurality of, for example, 25 to 200, wafers 200 in a horizontal posture and in a multi-stage by aligning them in the vertical direction with their centers aligned. Are arranged so as to be spaced apart. The boat 217 is made of a heat resistant material or the like (for example, quartz or SiC). Under the boat 217, heat insulating plates 218 made of a heat-resistant material or the like (for example, quartz or SiC) are supported in multiple stages in a horizontal posture. With this configuration, heat from the heater 207 is not easily transmitted to the seal cap 219 side. However, this embodiment is not limited to the above-mentioned form. For example, instead of providing the heat insulating plate 218 in the lower portion of the boat 217, a heat insulating cylinder configured as a cylindrical member made of a heat resistant material such as quartz or SiC may be provided. The heater 207 can heat the wafer 200 accommodated in the processing chamber 201 to a predetermined temperature.

  In the processing chamber 201, nozzles 410, 420, and 430 are provided so as to penetrate the side wall of the manifold 209. Gas supply pipes 310, 320, and 330 as gas supply lines are connected to the nozzles 410, 420, and 430, respectively. As described above, the reaction tube 203 is provided with the three nozzles 410, 420, and 430 and the three gas supply pipes 310, 320, and 330. The gas (processing gas, raw material) can be supplied through a dedicated line.

  The gas supply pipes 310, 320, and 330 are provided with mass flow controllers (MFCs) 312, 322, and 332 that are flow rate controllers (flow rate control units) and valves 314, 324, and 334 that are on-off valves in order from the upstream side. . Nozzles 410, 420, and 430 are connected to the distal ends of the gas supply pipes 310, 320, and 330. The nozzles 410, 420, and 430 are configured as L-shaped long nozzles, and the horizontal portion thereof is provided so as to penetrate the side wall of the manifold 209. The vertical portions of the nozzles 410, 420, and 430 are in an annular space formed between the inner wall of the reaction tube 203 and the wafer 200, and upward (upward in the stacking direction of the wafer 200) along the inner wall of the reaction tube 203. It is provided so as to rise upward (that is, so as to rise from one end side to the other end side of the wafer arrangement region). That is, the nozzles 410, 420, and 430 are provided along the wafer arrangement region in a region that horizontally surrounds the wafer arrangement region on the side of the wafer arrangement region where the wafers 200 are arranged.

  Gas supply holes 410a, 420a, and 430a that supply (spout) gas are provided on the side surfaces of the nozzles 410, 420, and 430. The gas supply holes 410a, 420a, and 430a are opened to face the center of the reaction tube 203. A plurality of the gas supply holes 410a, 420a, 430a are provided from the lower part to the upper part of the reaction tube 203, have the same opening area, and are provided at the same opening pitch.

  As described above, the gas supply method according to the present embodiment is an annular vertically long space defined by the inner wall of the reaction tube 203 and the ends of the stacked wafers 200, that is, a cylindrical shape. Gas is transferred via nozzles 410, 420, and 430 disposed in the space, and is first in the reaction tube 203 from the gas supply holes 410 a, 420 a, and 430 a opened in the nozzles 410, 420, and 430, respectively, in the vicinity of the wafer 200. The main flow of gas in the reaction tube 203 is in a direction parallel to the surface of the wafer 200, that is, in the horizontal direction. With such a configuration, there is an effect that the gas can be supplied uniformly to each wafer 200 and the thickness of the thin film formed on each wafer 200 can be made uniform. A gas flowing on the surface of each wafer 200, that is, a gas remaining after the reaction (residual gas) flows toward an exhaust port, that is, an exhaust pipe 231 to be described later. The direction is appropriately specified depending on the position of the exhaust port, and is not limited to the vertical direction.

  Further, carrier gas supply pipes 510, 520, and 530 for supplying a carrier gas are connected to the gas supply pipes 310, 320, and 330. Carrier gas supply pipes 510, 520, 530 are provided with MFCs 512, 522, 523 and valves 514, 524, 534.

As an example of the above configuration, a raw material gas containing a metal element (metal-containing gas) is supplied from the gas supply pipe 310 into the processing chamber 201 through the MFC 312, the valve 314, and the nozzle 410 as a processing gas. As the source gas, for example, a titanium tetrachloride (TiCl ₄ ) gas as a halogen-based source gas (also referred to as a halide or a halogen-based titanium source) containing titanium (Ti) as a metal element is used. Ti is classified as a transition metal element. The halogen-based material is a material containing a halogen group. The halogen group includes chloro group, fluoro group, bromo group, iodo group and the like. That is, the halogen group includes halogen elements such as chlorine (Cl), fluorine (F), bromine (Br), iodine (I) and the like.

From the gas supply pipe 320, N-containing gas as a reaction gas containing nitrogen (N) is supplied into the processing chamber 201 through the MFC 322, the valve 324, and the nozzle 420 as the processing gas. As the N-containing gas, a metal element-free N-containing gas such as ammonia (NH ₃ ) gas can be used.

From the gas supply pipe 330, a film thickness adjusting gas having the same composition as a by-product generated by a reaction between a TiCl ₄ gas as a source gas and an NH ₃ gas as a reaction gas is used as a processing gas. It is supplied into the processing chamber 201 through a valve 334 and a nozzle 430. As the film thickness adjusting gas, for example, hydrogen chloride (HCl) gas as a halogen-based gas (also referred to as a halide or a halogen-based titanium raw material) is used.

From the carrier gas supply pipes 510, 520, and 530, for example, nitrogen (N ₂ ) gas as an inert gas is processed through MFCs 512, 522, 532, valves 514, 524, 534, and nozzles 410, 420, 430, respectively. It is supplied into the chamber 201.

Here, in the present specification, the raw material gas is a gaseous raw material, for example, a gas obtained by vaporizing or sublimating a raw material in a liquid state or a solid state under normal temperature and normal pressure, or a gaseous state under normal temperature and normal pressure. It is the raw material etc. which are. In the present specification, when the term “raw material” is used, it means “liquid raw material in a liquid state”, “solid raw material in a solid state”, “source gas in a gaseous state”, or a combination thereof. There is. When using a liquid raw material that is in a liquid state at normal temperature and normal pressure, such as TiCl ₄ or a solid raw material that is in a solid state at normal temperature and normal pressure, the liquid raw material or solid raw material can be converted into a vaporizer, bubbler, or sublimator system. It is vaporized or sublimated and supplied as a source gas (TiCl ₄ gas or the like).

  When the processing gas as described above is allowed to flow from the gas supply pipes 310, 320, and 330, a processing gas supply system is mainly configured by the gas supply pipes 310, 320, 330, MFCs 312, 322, 332, and valves 314, 324, and 334. Is done. The nozzles 410, 420, and 430 may be included in the processing gas supply system. The processing gas supply system can be simply referred to as a gas supply system.

When flowing the metal-containing gas as the source gas as described above from the gas supply pipe 310, the metal-containing gas supply system as the source gas supply system is mainly configured by the gas supply pipe 310, the MFC 312 and the valve 314. The nozzle 410 may be included in the source gas supply system. The source gas supply system can also be referred to as a source supply system. When flowing a halogen-based source gas as a metal-containing gas from a gas supply pipe, the metal-containing gas supply system can also be referred to as a halogen-based source gas supply system. The halogen-based source gas supply system can also be referred to as a halogen-based source supply system. Further, when flowing TiCl ₄ gas from the gas supply pipe 310, it may be referred to as the halogen-based source gas supply system and TiCl ₄ gas supply system. The TiCl ₄ gas supply system can also be referred to as a TiCl ₄ supply system.

When flowing the N-containing gas as the reaction gas as described above from the gas supply pipe 320, the N-containing gas supply system as the reaction gas supply system is mainly configured by the gas supply pipe 320, the MFC 322, and the valve 324. The nozzle 420 may be included in the reaction gas supply system. When N-containing gas is allowed to flow as a reaction gas from the gas supply pipe 320, the reaction gas supply system can also be referred to as an N-containing gas supply system. Further, when flowing the NH ₃ gas from the gas supply pipe 320, it may also be referred to as NH ₃ gas supply system the N-containing gas supply system. The reaction gas supply system can also be referred to as an NH ₃ supply system.

  When a halogen-based gas is allowed to flow from the gas supply pipe 330 as the film thickness adjusting gas, a halogen-based gas supply system as a film thickness adjusting gas supply system is mainly configured by the gas supply pipe 330, the MFC 332, and the valve 334. The nozzle 430 may be included in the film thickness adjusting gas supply system. When HCl gas is allowed to flow from the gas supply pipe 330, the film thickness adjusting gas supply system can also be referred to as an HCl gas supply system. The film thickness adjusting gas supply system can also be referred to as an HCl supply system.

  In addition, a carrier gas supply system is mainly configured by carrier gas supply pipes 510, 520, 530, MFCs 512, 522, 523, and valves 514, 524, 534. When an inert gas is allowed to flow as the carrier gas, the carrier gas supply system can also be referred to as an inert gas supply system. Since this inert gas also acts as a purge gas, the inert gas supply system can also be referred to as a purge gas supply system.

  The manifold 209 is provided with an exhaust pipe 231 that exhausts the atmosphere in the processing chamber 201. The exhaust pipe 231 is provided so as to penetrate the side wall of the manifold 209, similarly to the nozzles 410, 420, and 430. As shown in FIG. 3, the exhaust pipe 231 is provided at a position facing the nozzles 410, 420, and 430 across the wafer 200 in a plan view. With this configuration, the gas supplied from the gas supply holes 410a, 420a, and 430a to the vicinity of the wafer 200 in the processing chamber 201 flows in the horizontal direction, that is, in the direction parallel to the surface of the wafer 200 and then downward. Then, the air flows through the exhaust pipe 231. As described above, the main flow of gas in the processing chamber 201 is a flow in the horizontal direction.

  The exhaust pipe 231 includes, in order from the upstream side, a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201, an APC (Auto Pressure Controller) valve 243, and a vacuum pump as a vacuum exhaust device. 246 is connected. The APC valve 243 is an exhaust valve and functions as a pressure adjustment unit. The exhaust pipe 231 includes a trap device that captures reaction by-products and unreacted processing gas in the exhaust gas, and a detoxification device that removes corrosive components and toxic components contained in the exhaust gas. May be connected. An exhaust system, that is, an exhaust line, is mainly configured by the exhaust pipe 231, the APC valve 243, and the pressure sensor 245. Note that the vacuum pump 246 may be included in the exhaust system. Furthermore, a trap device or a detoxifying device may be included in the exhaust system.

  Note that the APC valve 243 can open and close the vacuum pump 246 while the vacuum pump 246 is operated, thereby performing vacuum evacuation and stop of the vacuum exhaust in the processing chamber 201. Further, the APC valve 243 is in a state where the vacuum pump 246 is operated. Thus, the pressure in the processing chamber 201 can be adjusted by adjusting the valve opening. The APC valve 243 constitutes a part of the exhaust flow path of the exhaust system, and not only functions as a pressure adjusting unit, but also closes or further seals the exhaust flow path of the exhaust system. It also functions as a possible exhaust flow path opening / closing part, that is, an exhaust valve. That is, the exhaust system adjusts the opening degree of the APC valve 243 based on the pressure information detected by the pressure sensor 245 while operating the vacuum pump 246, thereby “actual pressure” in the processing chamber 201. Can be brought close to a predetermined “set pressure”. For example, to change the actual pressure in the processing chamber 201 when there is no change in the flow rate of the gas supplied into the processing chamber 201 or when the gas supply to the processing chamber 201 is stopped, etc. Then, the set pressure in the processing chamber 201 is changed, and the opening degree of the APC valve 243 is changed to an opening degree corresponding to the above set pressure. As a result, the exhaust capacity of the exhaust line is changed, and the actual pressure in the processing chamber 201 gradually (curvedly) approaches the set pressure described above. As described above, the “set pressure” in the processing chamber 201 can be considered to be synonymous with the “target pressure” when the pressure control in the processing chamber 201 is performed. The "pressure" will follow. Further, “changing the set pressure in the processing chamber 201” is substantially synonymous with “changing the opening degree of the APC valve 243 in order to change the exhaust capacity of the exhaust line”. It can be considered as “a command for changing the opening degree of the APC valve 243”.

  A temperature sensor 263 as a temperature detector is installed in the reaction tube 203, and the temperature in the processing chamber 201 is adjusted by adjusting the energization amount to the heater 207 based on the temperature information detected by the temperature sensor 263. It is configured to have a desired temperature distribution. The temperature sensor 263 is configured in an L shape like the nozzles 410, 420, and 430, and is provided along the inner wall of the reaction tube 203.

  As shown in FIG. 4, the controller 121, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. Has been. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via an internal bus. For example, an input / output device 122 configured as a touch panel or the like is connected to the controller 121.

  The storage device 121c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 121c, a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of the substrate processing described later, and the like are stored in a readable manner. The process recipe is a combination of instructions so that the controller 121 can execute each procedure in the substrate processing process described later and obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, the control program, and the like are collectively referred to as simply a program. When the term “program” is used in this specification, it may include only a process recipe alone, only a control program alone, or both. The RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily stored.

  The I / O port 121d includes the above-described MFC 312, 322, 332, 512, 522, 532, valves 314, 324, 334, 514, 524, 534, APC valve 243, pressure sensor 245, vacuum pump 246, heater 207, temperature The sensor 263, the rotation mechanism 267, the boat elevator 115 and the like are connected.

  The CPU 121a is configured to read out and execute a control program from the storage device 121c, and to read out a process recipe from the storage device 121c in response to an operation command input from the input / output device 122 or the like. In accordance with the read process recipe, the CPU 121a adjusts the flow rates of various gases by the MFCs 312, 322, 332, 512, 522, and 532, opens and closes the valves 314, 324, 334, 514, 524, and 534, and opens and closes the APC valve 243. And pressure adjustment operation based on the pressure sensor 245 by the APC valve 243, temperature adjustment operation of the heater 207 based on the temperature sensor 263, start and stop of the vacuum pump 246, rotation and rotation speed adjustment operation of the boat 217 by the rotation mechanism 267, boat elevator 115 is configured to control the lifting and lowering operation of the boat 217 by 115.

  The controller 121 is not limited to being configured as a dedicated computer, and may be configured as a general-purpose computer. For example, an external storage device (such as a magnetic tape, a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory or a memory card) that stores the above program 123 And installing the program in a general-purpose computer using the external storage device 123, the controller 121 according to the present embodiment can be configured. However, the means for supplying the program to the computer is not limited to supplying the program via the external storage device 123. For example, the program may be supplied without using the external storage device 123 by using communication means such as the Internet or a dedicated line. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. When the term “recording medium” is used in this specification, it may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both.

(2) Substrate processing process (film formation process)
As an example of the manufacturing process of the semiconductor device (device), an example of a process of forming a metal film constituting a gate electrode on the substrate will be described with reference to FIG. The step of forming the metal film is performed using the processing furnace 202 of the substrate processing apparatus 10 described above. In the following description, the operation of each part constituting the substrate processing apparatus 10 is controlled by the controller 121.

(First embodiment of the present invention)
A preferred film forming sequence (also simply referred to as a sequence) of the present embodiment is a process of supplying a source gas (for example, TiCl ₄ gas) to the wafer 200 and reacts with the source gas to the wafer 200. Supplying a reaction gas (for example, NH ₃ gas), performing a predetermined number of times in a time-sharing manner (asynchronously, intermittently, and pulsed), and supplying the source gas and the reaction gas to the wafer 200 And a process of supplying a processing gas (for example, HCl gas) having the same composition as the by-product formed by the reaction of the film, time-division is performed a predetermined number of times, thereby forming a film (for example, a TiN film) on the wafer 200 Forming a step.

  In this specification, when the term “wafer” is used, it means “wafer itself” or “a laminate (aggregate) of a wafer and a predetermined layer or film formed on the surface thereof”. "(That is, a wafer including a predetermined layer or film formed on the surface). In addition, when the term “wafer surface” is used in this specification, it means “the surface of the wafer itself (exposed surface)” or “the surface of a predetermined layer or film formed on the wafer”. That is, it may mean “the outermost surface of the wafer as a laminated body”.

  Therefore, in the present specification, the phrase “supplying a predetermined gas to the wafer” means “supplying a predetermined gas directly to the surface (exposed surface) of the wafer itself”. , It may mean that “a predetermined gas is supplied to a layer, a film, or the like formed on the wafer, that is, to the outermost surface of the wafer as a laminated body”. Further, in this specification, when “describe a predetermined layer (or film) on the wafer” is described, “determine a predetermined layer (or film) directly on the surface (exposed surface) of the wafer itself”. This means that a predetermined layer (or film) is formed on a layer or film formed on the wafer, that is, on the outermost surface of the wafer as a laminate. There is a case.

  Note that the term “substrate” in this specification is the same as the term “wafer”. In that case, in the above description, “wafer” is replaced with “substrate”. Good.

  Further, in this specification, the term “metal film” means a film made of a conductive substance containing a metal atom, which includes a conductive metal nitride film (metal nitride film), a conductive metal. Oxide film (metal oxide film), conductive metal oxynitride film (metal oxynitride film), conductive metal composite film, conductive metal alloy film, conductive metal silicide film (metal silicide film), conductive A conductive metal carbide film (metal carbide film), a conductive metal carbonitride film (metal carbonitride film), and the like. The TiN film (titanium nitride film) is a conductive metal nitride film.

(Wafer charge and boat load)
When a plurality of wafers 200 are loaded into the boat 217 (wafer charge), as shown in FIG. 1, the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and processed in the processing chamber 201. It is carried in (boat loading). In this state, the seal cap 219 closes the lower end opening of the reaction tube 203 via the O-ring 220.

(Pressure adjustment and temperature adjustment)
The processing chamber 201 is evacuated by a vacuum pump 246 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 243 is feedback-controlled based on the measured pressure information (pressure adjustment). The vacuum pump 246 keeps operating at least until the processing on the wafer 200 is completed. Further, the processing chamber 201 is heated by the heater 207 so as to have a desired temperature. At this time, the energization amount to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the processing chamber 201 has a desired temperature distribution (temperature adjustment). The heating of the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed. Subsequently, the rotation mechanism 267 starts the rotation of the boat 217 and the wafer 200. The rotation of the boat 217 and the wafer 200 by the rotation mechanism 267 is continuously performed at least until the processing on the wafer 200 is completed.

(TiN film formation step)
Subsequently, a step of forming a TiN film is performed. The TiN film forming step includes a metal-containing gas supply step, a residual gas removal step, a reactive gas supply step, and a residual gas removal step, which will be described below.

(Metal-containing gas supply step)
The valve 314 is opened, and TiCl ₄ gas that is a metal-containing gas is caused to flow into the gas supply pipe 310. The flow rate of the TiCl ₄ gas that has flowed through the gas supply pipe 310 is adjusted by the MFC 312. The flow-adjusted TiCl ₄ gas is supplied into the processing chamber 201 from the gas supply hole 410 a of the nozzle 410 and is exhausted from the exhaust pipe 231. At this time, TiCl ₄ gas is supplied to the wafer 200. That is, the surface of the wafer 200 is exposed to TiCl ₄ gas. At the same time, the valve 514 is opened, and an inert gas such as N ₂ gas is allowed to flow into the carrier gas supply pipe 510. The flow rate of the N ₂ gas flowing through the carrier gas supply pipe 510 is adjusted by the MFC 512. The N ₂ gas whose flow rate has been adjusted is supplied into the processing chamber 201 together with the TiCl ₄ gas, and is exhausted from the exhaust pipe 231. At this time, in order to prevent the TiCl ₄ gas from entering the nozzles 420 and 430, the valves 524 and 534 are opened, and N ₂ gas is allowed to flow into the carrier gas supply pipe 520 and the carrier gas supply pipe 530. The N ₂ gas is supplied into the processing chamber 201 through the gas supply pipe 320, the gas supply pipe 330, the nozzle 420, and the nozzle 430 and is exhausted from the exhaust pipe 231. At this time, the temperature of the heater 207 is set to such a temperature that the temperature of the wafer 200 becomes a temperature within a range of 200 to 500 ° C., for example. The gases flowing into the processing chamber 201 are only TiCl ₄ gas and N ₂ gas. By supplying the TiCl ₄ gas, on the wafer 200 (surface underlayer film), for example, less than one atomic layer to several atomic layers. A Ti-containing layer having a thickness is formed.

Ti-containing layers rarely become Ti layers containing only Ti single atoms, and actually contain other atoms derived from each raw material in many cases. Therefore, in the metal-containing gas supply step, Cl, which is a halogen-based element, is used. Often included. That is, it can be said Ti-containing layer is TiCl ₄ layer is substantially adsorbed layer of TiCl _4. The TiCl ₄ layer includes a continuous adsorption layer of TiCl ₄ molecules as well as a discontinuous adsorption layer. That is, the TiCl ₄ layer includes an adsorption layer having a thickness of less than one molecular layer composed of TiCl ₄ molecules. TiCl ₄ molecules constituting the TiCl ₄ layers, including those bonds between Ti and Cl is partially broken. That is, the TiCl ₄ layer includes a physical adsorption layer and a chemical adsorption layer of TiCl ₄ . However, under the above-described processing conditions, chemical adsorption is more dominant than physical adsorption of TiCl ₄ on the wafer 200.

  Here, a layer having a thickness of less than one atomic layer means an atomic layer formed discontinuously, and a layer having a thickness of one atomic layer means an atomic layer formed continuously. Means. A layer having a thickness of less than one molecular layer means a molecular layer formed discontinuously, and a layer having a thickness of one molecular layer means a molecular layer formed continuously. ing. This also applies to the examples described later.

(Residual gas removal step)
After the Ti-containing film is formed, the valve 314 is closed and the supply of TiCl ₄ gas is stopped. At this time, the APC valve 243 of the exhaust pipe 231 is kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and TiCl ₄ after contributing to the formation of unreacted or Ti-containing film remaining in the processing chamber 201. The gas is removed from the processing chamber 201. That is, the unreacted or remaining TiCl ₄ gas that contributes to the formation of the Ti-containing layer remaining in the space where the wafer 200 on which the Ti-containing layer is formed is removed. At this time, the valves 514, 524, and 534 remain open, and the supply of N ₂ gas into the processing chamber 201 is maintained. The N ₂ gas acts as a purge gas, and can enhance the effect of removing the unreacted or residual TiCl ₄ gas that has contributed to the formation of the Ti-containing film from the processing chamber 201.

At this time, the gas remaining in the processing chamber 201 may not be completely removed, and the inside of the processing chamber 201 may not be completely purged. If the amount of gas remaining in the processing chamber 201 is very small, no adverse effect will occur in the subsequent steps. The flow rate of the N ₂ gas supplied into the processing chamber 201 does not need to be large. For example, by supplying an amount similar to the volume of the reaction tube 203 (processing chamber 201), there is an adverse effect in subsequent steps. Purge that does not occur can be performed. Thus, by not completely purging the inside of the processing chamber 201, the purge time can be shortened and the throughput can be improved. In addition, consumption of N ₂ gas can be minimized.

(Reactive gas supply step)
After the residual gas in the processing chamber 201 is removed, the valve 324 is opened, and NH ₃ gas that is a reaction gas is caused to flow into the gas supply pipe 320. The flow rate of the NH ₃ gas flowing through the gas supply pipe 320 is adjusted by the MFC 322. The NH ₃ gas whose flow rate has been adjusted is supplied into the processing chamber 201 from the gas supply hole 420 a of the nozzle 420. The NH ₃ gas supplied into the processing chamber 201 is activated by heat and then exhausted from the exhaust pipe 231. At this time, NH ₃ gas activated by heat is supplied to the wafer 200. That is, the surface of the wafer 200 is exposed to heat activated NH ₃ gas. At the same time, the valve 524 is opened, and N ₂ gas is caused to flow into the carrier gas supply pipe 520. The flow rate of the N ₂ gas flowing through the carrier gas supply pipe 520 is adjusted by the MFC 522. The N ₂ gas is supplied into the processing chamber 201 together with the NH ₃ gas, and is exhausted from the exhaust pipe 231. At this time, in order to prevent the NH ₃ gas from entering the nozzles 410 and 430, the valves 514 and 534 are opened, and the N ₂ gas is caused to flow into the carrier gas supply pipes 510 and 530. The N ₂ gas is supplied into the processing chamber 201 through the gas supply pipes 310 and 330, the nozzle 410 and the nozzle 430, and is exhausted from the exhaust pipe 231. The temperature of the heater 207 at this time is set to the same temperature as in the metal-containing gas supply step.

At this time, the gases flowing into the processing chamber 201 are only NH ₃ gas and N ₂ gas. The NH ₃ gas undergoes a substitution reaction with at least a part of the Ti-containing layer formed on the wafer 200 in the metal-containing gas supply step. In the substitution reaction, Ti contained in the Ti-containing layer and N contained in the NH ₃ gas are combined to form a TiN layer containing Ti and N on the wafer 200. At the same time, in the processing chamber 201, Cl contained in the Ti-containing layer and NH ₃ gas are combined to form reaction by-products such as HCl and NHxCl (also simply referred to as by-products). At the center of the wafer 200, the influence of reaction byproducts (simply referred to as byproducts) such as HCl and NHxCl is large, and at the outer periphery of the wafer 200, reaction byproducts (simply referred to as byproducts) such as HCl and NHxCl. ) Is small, the in-plane film thickness distribution of the wafer 200 may be concave.

(Residual gas removal step)
After forming the TiN layer, the valve 324 is closed and the supply of NH ₃ gas is stopped. At this time, the APC valve 243 of the exhaust pipe 231 is kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and NH ₃ after contributing to the formation of the unreacted or TiN layer remaining in the processing chamber 201 Gases and reaction byproducts are removed from the processing chamber 201. At this time, the valves 514, 524, and 534 remain open, and the supply of N ₂ gas into the processing chamber 201 is maintained. The N ₂ gas acts as a purge gas, and it is possible to enhance the effect of removing NH ₃ gas and reaction by-products remaining in the processing chamber 201 and contributing to the formation of the TiN layer from the processing chamber 201. .

  At this time, similarly to the residual gas removal step after the metal-containing gas supply step, the gas remaining in the processing chamber 201 may not be completely removed, and the processing chamber 201 may not be completely purged.

(Performed times)
By performing the above-described metal-containing gas supply step, residual gas removal step, reaction gas supply step, and residual gas supply step in a time-division sequence one or more times (predetermined number of times), that is, a metal-containing gas supply step, The processes of the residual gas removal step, the reactive gas supply step, and the residual gas supply step are set as one cycle, and these processes are executed for n ₁ cycles (n ₁ is an integer equal to or greater than ₁ ). A TiN film having a thickness is formed. The above cycle is preferably repeated multiple times.

  When the cycle is performed a plurality of times, at least in each step after the second cycle, the portion described as “supplying gas to the wafer 200” is “to the layer formed on the wafer 200, that is, This means that a predetermined gas is supplied to the outermost surface of the wafer 200 as a laminated body, and a portion that “forms a predetermined layer on the wafer 200” is “formed on the wafer 200. It means that a predetermined layer is formed on a certain layer, that is, on the outermost surface of the wafer 200 as a laminate. This also applies to the examples described later.

(Thickness adjustment step)
Subsequently, a step of adjusting the film thickness is performed. The film thickness adjustment step includes a film thickness adjustment gas supply step and a residual gas removal step described below.

(Thickness adjustment gas supply step)
The valve 334 is opened, and HCl gas which is a film thickness adjusting gas is caused to flow in the gas supply pipe 330. The flow rate of the HCl gas flowing through the gas supply pipe 330 is adjusted by the MFC 332. The flow-adjusted HCl gas is supplied from the gas supply hole 430 a of the nozzle 430 into the processing chamber 201 and is exhausted from the exhaust pipe 231. At this time, HCl gas is supplied to the wafer 200. That is, the surface of the wafer 200 is exposed to HCl gas. The supply flow rate of the HCl gas is set so that the supply flow rate mainly affects the outer peripheral portion of the wafer 200 and has little influence on the central portion of the wafer 200. At the same time, the valve 534 is opened, and N ₂ gas is caused to flow into the carrier gas supply pipe 530. The flow rate of the N ₂ gas flowing through the carrier gas supply pipe 530 is adjusted by the MFC 532. The N ₂ gas whose flow rate is adjusted is supplied into the processing chamber 201 together with the HCl gas, and is exhausted from the exhaust pipe 231. At this time, in order to prevent HCl gas from entering the nozzles 410 and 420, the valves 514 and 524 are opened, and N ₂ gas is allowed to flow into the carrier gas supply pipe 510 and the carrier gas supply pipe 520. The N ₂ gas is supplied into the processing chamber 201 through the gas supply pipes 310 and 320 and the nozzles 410 and 420 and is exhausted from the exhaust pipe 231. The temperature of the heater 207 at this time is set to the same temperature as in the metal-containing gas supply step. The gases flowing into the processing chamber 201 are only HCl gas and N ₂ gas, and react with the TiN film formed mainly on the outer peripheral portion of the wafer 200 to etch the TiN film, and in the outer peripheral portion of the wafer 200. The thickness of the TiN film is reduced.

(Residual gas removal step)
Thereafter, the valve 334 is closed to stop the supply of HCl gas. At this time, the APC valve 243 of the exhaust pipe 231 is kept open, the processing chamber 201 is evacuated by the vacuum pump 246, and the unreacted residual in the processing chamber 201 or after contributing to the etching of the TiN film described above HCl gas is removed from the processing chamber 201. At this time, the valves 510, 520, and 530 remain open, and the supply of N ₂ gas into the processing chamber 201 is maintained. The N ₂ gas acts as a purge gas, and this can enhance the effect of removing the unreacted HCl gas remaining in the processing chamber 201 or the HCl gas after contributing to the etching of the TiN film from the processing chamber 201.

  At this time, similarly to the residual gas removal step after the metal-containing gas supply step, the gas remaining in the processing chamber 201 may not be completely removed, and the processing chamber 201 may not be completely purged.

(Performed times)
The above-described TiN film forming step and the above-described film thickness adjusting step are executed in a time-sharing manner n ₂ times (n ₂ is an integer equal to or greater than 1). A TiN film having in-plane uniformity is formed. The above steps are preferably repeated multiple times. Note that the film thickness uniformity of the finally formed TiN film can be adjusted by the number of times of performing the TiN film forming step (n ₁ described above) and the supply flow rate of HCl in the film thickness adjusting step.

(Purge and return to atmospheric pressure)
The valves 514, 524 and 534 are opened, N ₂ gas is supplied into the processing chamber 201 from the gas supply pipes 510, 520 and 530, and exhausted from the exhaust pipe 231. The N ₂ gas acts as a purge gas, whereby the inside of the processing chamber 201 is purged with an inert gas, and the gas and by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (purge). Thereafter, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).

(Boat unload and wafer discharge)
Thereafter, the seal cap 219 is lowered by the boat elevator 115 and the lower end of the reaction tube 203 is opened. The processed wafer 200 is unloaded from the lower end of the reaction tube 203 to the outside of the reaction tube 203 while being supported by the boat 217 (boat unloading). Thereafter, the processed wafer 200 is taken out from the boat 217 (wafer discharge).

(3) Effects according to this embodiment According to this embodiment, one or more of the following effects can be obtained.

  In this embodiment, by supplying a processing gas having the same composition as the by-product generated by the reaction of the Ti-containing gas and the N-containing gas to the outer peripheral portion of the substrate, the thickness of the outer peripheral portion of the substrate is increased. It is possible to solve the problem of increasing the in-plane film thickness uniformity.

The above effect is obtained when a metal-containing gas other than TiCl ₄ gas is used as the source gas, or when a N-containing gas other than NH ₃ gas is used as the reaction gas, a halogen-based gas other than HCl gas is used as the film thickness adjusting gas. In the case, it plays similarly.

<Other Embodiments of the Present Invention>
Each above-mentioned embodiment can be used in combination as appropriate. Furthermore, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

In the above-described embodiment, the example in which the TiN film having a certain thickness using the TiCl ₄ gas and the NH ₃ gas and the film thickness adjusting step are performed in a time-sharing manner a predetermined number of times has been described. When the number of times is one, the metal-containing gas supply step, the residual gas removal step, the reaction gas supply step, the residual gas supply step, the film thickness adjustment gas supply step, and the residual gas removal step are sequentially performed in a time-division manner for a predetermined number of times. It becomes. That is, TiCl ₄ gas supply, residual gas removal, NH ₃ gas supply, residual gas removal, HCl gas supply, and residual gas removal are sequentially performed in a time-sharing manner and performed a predetermined number of times.

In the above-described embodiment, the example in which the HCl gas is supplied after the NH ₃ gas is supplied has been described. However, the present invention is not limited thereto, and the HCl gas may be supplied after the TiCl ₄ gas is supplied. That is, the metal-containing gas supply step, the residual gas removal step, the film thickness adjusting gas supply step, the residual gas removal step, the reactive gas supply step, and the residual gas supply step may be performed in a predetermined number of times in order. In other words, TiCl ₄ gas supply, residual gas removal, HCl gas supply, residual gas removal, NH ₃ gas supply, and residual gas removal are sequentially performed in a time-division manner and performed a predetermined number of times.

Further, the HCl gas may be supplied to the wafer 200 simultaneously with both or one of the TiCl ₄ gas and the NH ₃ gas.

FIG. 6 shows a case where the thickness of the TiN film formed by the prior art in which the TiN film is formed only by the TiN film forming step without performing the film thickness adjusting step is normalized as 1, and the film thickness after the supply of TiCl ₄ gas. The film thicknesses when the adjustment step is performed and when the film thickness adjustment step is performed after the supply of NH ₃ gas are compared. From FIG. 6, it can be seen that there is an effect of reducing the film thickness both when the film thickness adjusting step is performed after supplying the TiCl ₄ gas and when the film thickness adjusting step is performed after supplying the NH ₃ gas.

In the above-described embodiment, an example in which TiCl ₄ gas, NH ₃ gas, and HCl gas are supplied into the processing chamber 201 from different nozzles has been described. However, the present invention is not limited to this, and the HCl gas is TiCl ₄ gas, NH _3. You may supply from the same nozzle as gas. That is, it may be supplied from the same nozzle as the TiCl ₄ gas, or may be supplied from the same nozzle as the NH ₃ gas.

In the above-described embodiment, the example in which the TiCl ₄ gas containing Ti as the metal element is used as the source gas has been described. The present invention is not limited to the above-described embodiment, and is applicable to the case of using a source gas containing a metal element such as W, tantalum (Ta), molybdenum (Mo), or zinc (Zn), or an element such as silicon (Si). Is possible. Also, an example has been described using the NH ₃ gas is N-containing gas as a reaction gas, the present invention is not limited to the embodiment described above, oxygen (O), in the case of using a reaction gas containing carbon (C), etc. Is also applicable.

  For example, as applicable films, for example, applicable metal nitride films and metal carbide films include WN films, TaN films, MoN films, ZnN films, WC films, TiC films, TaC films, MoC films, ZnC films. , WCN films, TiCN films, TaCN films, MoCN films, ZnCN films and other metal nitride films, metal carbide films, SiO films, SiN films, SiON films, insulating films such as SiOCN films, and combinations thereof Film.

Examples of the source gas include, in addition to TiCl ₄ , titanium tetrafluoride (TiF ₄ ), tungsten hexachloride (WCl ₆ ), tungsten hexafluoride (WF ₆ ), tantalum pentachloride (TaCl ₅ ), and pentafluoride. Tantalum (TaF ₅ ), molybdenum pentafluoride (MoF ₅ ), molybdenum pentachloride (MoCl ₅ ), zinc dichloride (ZnCl ₂ ), zinc difluoride (ZnF ₂ ), silicon tetrachloride (SiCl ₄ ), dichlorosilane (SiH ₂ Cl ₂ ), disilicon hexachloride (Si ₂ Cl ₆ ), or the like can also be used.

As the reaction gas, for example, triethylamine (TEA), diethylamine (DEA), dimethylamine (DMA), tertiary butylamine (TBA) and the like can be used in addition to NH ₃ .

As the film thickness adjusting gas, for example, a halogen-based gas such as chlorine (Cl ₂ ) can be used in addition to HCl.

In the above-described embodiment, an example in which N ₂ gas is used as the inert gas is described. However, the present invention is not limited to this, and a rare gas such as Ar gas, He gas, Ne gas, or Xe gas may be used. Good.

  Further, in the above-described embodiment, the example applied to the gate electrode of the MOSFET or the capacitor electrode of the DRAM has been described. However, the present invention is not limited thereto, and the present invention can be applied to a barrier metal, a hard mask, and the like.

  In the above-described embodiment, the substrate processing apparatus is a batch type vertical apparatus that processes a plurality of substrates at a time, and a nozzle for supplying a processing gas is erected in one reaction tube. Although an example of forming a film using a processing furnace having a structure in which an exhaust port is provided in the lower part has been described, the present invention can also be applied to a case where a film is formed using a processing furnace having another structure. For example, there are two reaction tubes having a concentric cross section (the outer reaction tube is called an outer tube and the inner reaction tube is called an inner tube), and a side wall of the outer tube is provided from a nozzle standing in the inner tube. However, the present invention can also be applied to a case where a film is formed using a processing furnace having a structure in which a processing gas flows to an exhaust port that opens to a position (axisymmetric position) facing the nozzle with the substrate interposed therebetween. Further, the processing gas may be supplied from a gas supply port that opens in a side wall of the inner tube, instead of being supplied from a nozzle standing in the inner tube. At this time, the exhaust port opened to the outer tube may be opened according to the height at which there are a plurality of substrates stacked and accommodated in the processing chamber. Further, the shape of the exhaust port may be a hole shape or a slit shape.

  In the above-described embodiment, an example of forming a film using a substrate processing apparatus which is a batch type vertical apparatus that processes a plurality of substrates at a time has been described, but the present invention is not limited thereto, The present invention can also be suitably applied to the case of forming a film using a single-wafer type substrate processing apparatus that processes one or several substrates at a time. In the above-described embodiment, an example in which a thin film is formed using a substrate processing apparatus having a hot wall type processing furnace has been described. However, the present invention is not limited to this, and a cold wall type processing furnace is provided. The present invention can also be suitably applied when forming a thin film using a substrate processing apparatus. Even in these cases, the processing conditions can be the same processing conditions as in the above-described embodiment, for example.

  For example, the present invention can be suitably applied to the case where a film is formed using a substrate processing apparatus including the processing furnace 302 shown in FIG. The processing furnace 302 includes a processing container 303 that forms the processing chamber 301, a shower head 303s that supplies gas into the processing chamber 301 in a shower shape, and a support base 317 that supports one or several wafers 200 in a horizontal posture. And a rotating shaft 355 that supports the support base 317 from below, and a heater 307 provided on the support base 317. A gas supply port 332a for supplying the above-described source gas and a gas supply port 332b for supplying the above-described reaction gas are connected to an inlet (gas introduction port) of the shower head 303s. A source gas supply system similar to the source gas supply system of the above-described embodiment is connected to the gas supply port 332a. A reaction gas supply system similar to the reaction gas supply system of the above-described embodiment is connected to the gas supply port 332b. At the outlet (gas outlet) of the shower head 303s, a gas dispersion plate that supplies gas into the processing chamber 301 in a shower shape is provided. The processing vessel 303 is provided with an exhaust port 331 for exhausting the inside of the processing chamber 301. An exhaust system similar to the exhaust system of the above-described embodiment is connected to the exhaust port 331.

  Further, for example, the present invention can be suitably applied to the case where a film is formed using a substrate processing apparatus including the processing furnace 402 shown in FIG. The processing furnace 402 includes a processing container 403 that forms a processing chamber 401, a support base 417 that supports one or several wafers 200 in a horizontal position, a rotating shaft 455 that supports the support base 417 from below, and a processing container. A lamp heater 407 that irradiates the wafer 200 with light 403 and a quartz window 403w that transmits light from the lamp heater 407 are provided. The processing vessel 403 is connected to a gas supply port 432a for supplying the above-described source gas and a gas supply port 432b for supplying the above-described reaction gas. A source gas supply system similar to the source gas supply system of the above-described embodiment is connected to the gas supply port 432a. A reaction gas supply system similar to the reaction gas supply system of the above-described embodiment is connected to the gas supply port 432b. The processing container 403 is provided with an exhaust port 431 for exhausting the inside of the processing chamber 401. An exhaust system similar to the exhaust system of the above-described embodiment is connected to the exhaust port 431.

  Even when these substrate processing apparatuses are used, film formation can be performed under the same sequence and processing conditions as those of the above-described embodiments and modifications.

The process recipes (programs describing processing procedures and processing conditions) used to form these various thin films are the contents of the substrate processing (film type, composition ratio, film quality, film thickness, processing procedure, processing of the thin film to be formed) It is preferable to prepare individually (multiple preparations) according to the conditions. And when starting a substrate processing, it is preferable to select a suitable process recipe suitably from several process recipes according to the content of a substrate processing. Specifically, the substrate processing apparatus includes a plurality of process recipes individually prepared according to the contents of the substrate processing via an electric communication line or a recording medium (external storage device 123) on which the process recipe is recorded. It is preferable to store (install) in the storage device 121c in advance. When starting the substrate processing, the CPU 121a included in the substrate processing apparatus appropriately selects an appropriate process recipe from a plurality of process recipes stored in the storage device 121c according to the content of the substrate processing. Is preferred. With this configuration, thin films with various film types, composition ratios, film qualities, and film thicknesses can be formed for general use with good reproducibility using a single substrate processing apparatus. In addition, it is possible to reduce the operation burden on the operator (such as an input burden on the processing procedure and processing conditions), and to quickly start the substrate processing while avoiding an operation error.

  The present invention can also be realized by changing a process recipe of an existing substrate processing apparatus, for example. When changing a process recipe, the process recipe according to the present invention is installed in an existing substrate processing apparatus via a telecommunication line or a recording medium recording the process recipe, or input / output of the existing substrate processing apparatus It is also possible to operate the apparatus and change the process recipe itself to the process recipe according to the present invention.

  Hereinafter, desirable modes of the present invention will be additionally described.

[Appendix 1]
According to one aspect of the invention,
Supplying a source gas to the substrate;
Supplying a reactive gas that reacts with the source gas to the substrate;
Performing a predetermined number of times in a time-sharing manner,
Supplying a processing gas having the same composition as a by-product formed by reacting the source gas and the reaction gas to the substrate;
Is performed in a time-division manner for a predetermined number of times, thereby providing a method for manufacturing a semiconductor device having a step of forming a film on the substrate.

[Appendix 2]
The method according to appendix 1, preferably,
The source gas is a halogen-based gas.

[Appendix 3]
The method according to appendix 1 or appendix 2, preferably,
The processing gas is a halogen-based gas.

[Appendix 4]
According to another aspect of the invention,
A processing chamber for accommodating the substrate;
A gas supply system for supplying a source gas, a reaction gas that reacts with the source gas, and a processing gas having the same composition as a by-product formed by the reaction of the source gas and the reaction gas to the substrate When,
A process of supplying the source gas and a process of supplying the reaction gas to the substrate accommodated in the processing chamber in a time-sharing manner a predetermined number of times, and a process of supplying the process gas. A controller configured to form a film on the substrate by performing time division and performing a predetermined number of times;
A substrate processing apparatus is provided.

[Appendix 5]
According to another aspect of the invention,
A procedure for supplying a source gas to the substrate;
Supplying a reaction gas that reacts with the source gas to the substrate;
To perform a predetermined number of times in a time-sharing manner,
A procedure for supplying a processing gas having the same composition as a by-product formed by reacting the source gas and the reaction gas to the substrate;
By performing a predetermined number of times in a time-sharing manner, a program for causing a computer to execute a procedure for forming a film on the substrate, or a computer-readable recording medium on which the program is recorded is provided.

  As described above, the present invention can be used for, for example, a method for manufacturing a semiconductor device, a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate, and the like.

DESCRIPTION OF SYMBOLS 10 ... Substrate processing apparatus 200 ... Wafer 201 ... Processing chamber 202 ... Processing furnace

Claims (5)

Supplying a source gas to the substrate;
Supplying a reactive gas that reacts with the source gas to the substrate;
Performing a predetermined number of times in a time-sharing manner,
Supplying a processing gas having the same composition as a by-product formed by reacting the source gas and the reaction gas to the substrate;
A method of manufacturing a semiconductor device having a step of forming a film on the substrate by performing a predetermined number of times in a time-sharing manner.   The method of manufacturing a semiconductor device according to claim 1, wherein the source gas is a halogen-based gas.   The method for manufacturing a semiconductor device according to claim 1, wherein the processing gas is a halogen-based gas. A processing chamber for accommodating the substrate;
A gas supply system for supplying a source gas, a reaction gas that reacts with the source gas, and a processing gas having the same composition as a by-product formed by the reaction of the source gas and the reaction gas to the substrate When,
A process of supplying the source gas and a process of supplying the reaction gas to the substrate accommodated in the processing chamber in a time-sharing manner a predetermined number of times, and a process of supplying the process gas. A controller configured to form a film on the substrate by performing time division and performing a predetermined number of times;
A substrate processing apparatus. A procedure for supplying a source gas to the substrate;
Supplying a reaction gas that reacts with the source gas to the substrate;
To perform a predetermined number of times in a time-sharing manner,
A procedure for supplying a processing gas having the same composition as a by-product formed by reacting the source gas and the reaction gas to the substrate;
A program for causing a computer to execute a procedure for forming a film on the substrate by performing a predetermined number of times in a time-sharing manner.