JP2013211010A5 - - Google Patents

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Publication number
JP2013211010A5
JP2013211010A5 JP2013046622A JP2013046622A JP2013211010A5 JP 2013211010 A5 JP2013211010 A5 JP 2013211010A5 JP 2013046622 A JP2013046622 A JP 2013046622A JP 2013046622 A JP2013046622 A JP 2013046622A JP 2013211010 A5 JP2013211010 A5 JP 2013211010A5
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JP
Japan
Prior art keywords
wafer
surface image
wafer surface
site
image
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JP2013046622A
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English (en)
Japanese (ja)
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JP2013211010A (ja
JP6265608B2 (ja
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Priority claimed from US13/779,947 external-priority patent/US9177370B2/en
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JP2013046622A 2012-03-12 2013-03-08 ウェーハ表面計測のための高度化されたサイトベースのナノトポグラフィシステム及び方法 Active JP6265608B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261609487P 2012-03-12 2012-03-12
US61/609,487 2012-03-12
US13/779,947 2013-02-28
US13/779,947 US9177370B2 (en) 2012-03-12 2013-02-28 Systems and methods of advanced site-based nanotopography for wafer surface metrology

Publications (3)

Publication Number Publication Date
JP2013211010A JP2013211010A (ja) 2013-10-10
JP2013211010A5 true JP2013211010A5 (cg-RX-API-DMAC7.html) 2016-04-21
JP6265608B2 JP6265608B2 (ja) 2018-01-24

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JP2013046622A Active JP6265608B2 (ja) 2012-03-12 2013-03-08 ウェーハ表面計測のための高度化されたサイトベースのナノトポグラフィシステム及び方法

Country Status (3)

Country Link
US (1) US9177370B2 (cg-RX-API-DMAC7.html)
EP (1) EP2639575B1 (cg-RX-API-DMAC7.html)
JP (1) JP6265608B2 (cg-RX-API-DMAC7.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2011253779A1 (en) * 2011-12-01 2013-06-20 Canon Kabushiki Kaisha Estimation of shift and small image distortion
US8917930B2 (en) * 2012-05-08 2014-12-23 Hewlett-Packard Development Company, L.P. Selecting metrics for substrate classification
US9355440B1 (en) * 2012-10-10 2016-05-31 Kla-Tencor Corp. Detection of selected defects in relatively noisy inspection data
DE102014106290A1 (de) * 2014-05-06 2015-11-12 Fries Research & Technology Gmbh Verfahren zum Messen der Nanotopographie eines Objekts
US9377416B2 (en) 2014-05-17 2016-06-28 Kla-Tencor Corp. Wafer edge detection and inspection
US10062158B2 (en) 2015-07-10 2018-08-28 Globalwafers Co., Ltd. Wafer nanotopography metrology for lithography based on thickness maps
JP6489999B2 (ja) 2015-11-19 2019-03-27 東芝メモリ株式会社 位置合わせ方法およびパターン形成システム
NL2017860B1 (en) 2015-12-07 2017-07-27 Ultratech Inc Systems and methods of characterizing process-induced wafer shape for process control using cgs interferometry
US9767537B1 (en) * 2016-04-20 2017-09-19 Applied Materials Israel Ltd. System and method for inspection using programmable filters
TWI743176B (zh) 2016-08-26 2021-10-21 美商應用材料股份有限公司 獲得代表在基板上的層的厚度的測量的方法,及量測系統和電腦程式產品
CN110622287B (zh) * 2017-05-22 2023-11-03 科磊股份有限公司 用于配方优化及测量的区域分析
TWI677233B (zh) * 2018-08-02 2019-11-11 瑞昱半導體股份有限公司 決定濾波器係數的方法
CN111832610A (zh) * 2020-06-01 2020-10-27 成都飞机工业(集团)有限责任公司 一种3d打印组织预测的方法、系统、介质以及终端设备
JP7694469B2 (ja) * 2021-07-21 2025-06-18 信越化学工業株式会社 マスクブランクス用基板及びその製造方法
US20250111494A1 (en) * 2023-09-28 2025-04-03 Siemens Industry Software Inc. Contour extraction of images with selection-based auto tuning

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06325181A (ja) * 1993-05-17 1994-11-25 Mitsubishi Electric Corp パターン認識方法
TW513772B (en) * 2000-09-05 2002-12-11 Komatsu Denshi Kinzoku Kk Apparatus for inspecting wafer surface, method for inspecting wafer surface, apparatus for judging defective wafer, method for judging defective wafer and information treatment apparatus of wafer surface
WO2002040970A1 (en) * 2000-11-15 2002-05-23 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
US6873938B1 (en) * 2003-09-17 2005-03-29 Asml Netherlands B.V. Adaptive lithographic critical dimension enhancement
JP4400331B2 (ja) * 2004-06-17 2010-01-20 信越半導体株式会社 ウエーハの形状評価方法及び管理方法
CN101095036A (zh) * 2004-11-17 2007-12-26 数据色彩控股股份公司 有集成染料滤波器的三原色比色计
EP2324495A4 (en) * 2008-08-28 2013-06-05 Kla Tencor Corp LOCALIZED CHARACTERIZATION OF THE GEOMETRY OF A SUBSTRATE

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