JP2013206983A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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JP2013206983A
JP2013206983A JP2012072206A JP2012072206A JP2013206983A JP 2013206983 A JP2013206983 A JP 2013206983A JP 2012072206 A JP2012072206 A JP 2012072206A JP 2012072206 A JP2012072206 A JP 2012072206A JP 2013206983 A JP2013206983 A JP 2013206983A
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substrate
cleaning
liquid
peripheral
scrub
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JP2012072206A
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JP5955601B2 (en
Inventor
Masahiro Miyagi
雅宏 宮城
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Dainippon Screen Mfg Co Ltd
大日本スクリーン製造株式会社
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Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus in which a scrub member can be cleaned without providing a cleaning unit for exclusive use, and to provide a substrate processing method.SOLUTION: A substrate processing apparatus 1 includes a spin chuck 2 having a holding pin 11 in contact with the peripheral end face of a substrate W, a rotary drive mechanism 13 for rotating the spin chuck 2 about the axis of rotation 8, a scrub member 15 which comes into contact with the main surface of the substrate W held by the spin chuck 2 and performs scrub cleaning thereof, a spray nozzle 25 for spraying a liquid to a cleaning object area set to match the peripheral region of the substrate W, and a scrub member drive mechanism 16 for moving the scrub member 15, in parallel with the cleaning of the peripheral region of a substrate by means of the spray nozzle 25, so as to perform scrub cleaning of the substrate W. The scrub member 15 moves along a travel path passing through the center of rotation of the substrate W and the cleaning object area, and is cleaned by means of the spray nozzle 25 in the cleaning object area.

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for cleaning a main surface of a substrate while holding a peripheral end surface of the substrate with a holding member. Substrates to be cleaned include, for example, semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, Photomask substrates, ceramic substrates, solar cell substrates and the like are included.

  Patent Document 1 discloses a spin chuck that rotates while holding a substrate in a horizontal state, a cleaning brush that scrubs the surface of the substrate W held by the spin chuck, and a two-fluid nozzle that performs a cleaning process on the periphery of the substrate. A substrate cleaning apparatus provided is disclosed. The spin chuck includes support pins that support a plurality of locations on the periphery of the substrate. With this configuration, the peripheral edge of the substrate is cleaned by the two-fluid nozzle, and at the same time, the substrate is cleaned by oscillating the region other than the peripheral edge of the cleaning brush.

JP 2003-1199 A

  The cleaning brush is a member that directly contacts the surface of the substrate and scrubs the surface of the substrate, and cleans the surface of the substrate by rubbing off foreign matters (contaminants) on the surface of the substrate. Accordingly, foreign substances on the surface of the substrate adhere to the cleaning member, and if the foreign substances are accumulated, the foreign substances may be transferred from the cleaning brush to the substrate, and the cleanliness of the substrate may be deteriorated. Therefore, it is necessary to periodically replace the cleaning brush. In order to lengthen the replacement period of the cleaning brush, it is necessary to provide a brush cleaning unit for cleaning the cleaning brush. Therefore, there is a problem that the running cost or the apparatus cost is high.

  Therefore, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can clean a scrub member without providing a dedicated cleaning unit, thereby reducing running costs and apparatus costs.

  In order to achieve the above-mentioned object, the invention according to claim 1 includes a substrate holding means having a holding member that abuts on a peripheral end surface of the substrate, a rotating means for rotating the substrate holding means around a predetermined rotation axis, and A scrub member for scrub cleaning the main surface of the substrate held by the substrate holding means, and a cleaning target area set so as to be aligned with the peripheral area of the substrate held by the substrate holding means A peripheral region cleaning means for cleaning the peripheral region of the substrate by the kinetic energy of the liquid, and supplying the liquid to which the kinetic energy is applied to the cleaning target region, and the peripheral region cleaning unit to the substrate During the period in which the peripheral area of the substrate is being cleaned, a range that is radially inward of the holding member along the movement path passing through the center of rotation of the substrate and the area to be cleaned , While abutting the scrubbing member on the main surface of the substrate, including a scrubbing member moving means for moving along a radial direction of the substrate, a substrate processing apparatus.

  According to this configuration, the main surface of the substrate is scrubbed by rotating the substrate holding means around the rotation axis by the rotating means and moving the scrub member while abutting the main surface of the substrate by the scrub member moving means. can do. Since the substrate holding means has a holding member that comes into contact with the peripheral end surface of the substrate, the scrub member that physically contacts the main surface of the substrate is more in the radial direction of rotation than the holding member so as not to interfere with the holding member. It is moved within the range. On the other hand, in order to clean the peripheral region of the substrate, peripheral region cleaning means is provided, and the peripheral region of the substrate is cleaned in parallel with the cleaning of the main surface of the substrate by the scrub member. The peripheral region cleaning means is configured to supply the liquid to which the kinetic energy is applied to the cleaning target region, thereby cleaning the peripheral region of the substrate. Therefore, it is possible to satisfactorily clean the region near the portion where the holding member abuts in the peripheral region of the substrate without using a member that physically interferes with the holding member. In this way, scrub cleaning of the main surface of the substrate and non-contact cleaning of the peripheral region of the substrate can be performed in parallel, so that the entire surface of the substrate can be thoroughly cleaned in a short time.

  Further, in the present invention, the movement path of the scrub member is set so as to pass through the rotation center of the substrate and the area to be cleaned by the peripheral area cleaning means. Therefore, when the scrubbing member reaches the cleaning target area, the scrubbing member comes into contact with the liquid to which kinetic energy is applied, thereby cleaning the scrubbing member. That is, even if the foreign matter scraped off from the surface of the substrate is accumulated in the scrub member, the foreign matter is detached from the scrub member by the kinetic energy of the liquid in the cleaning target area of the peripheral area cleaning means. As a result, the scrub member becomes clean. In particular, if the scrub member is repeatedly reciprocated between the center of rotation of the substrate and the region to be cleaned a plurality of times, the scrub member can be periodically cleaned. The surface can be scrubbed. As a result, the substrate can be cleaned with a high degree of cleanliness, and in addition, the scrub member replacement cycle can be lengthened to reduce running costs. In addition, since a dedicated cleaning unit is not required for cleaning the scrub member, the configuration of the substrate processing apparatus can be simplified, and the apparatus cost can be reduced.

  Note that the rotation center of the substrate is an intersection of the main surface of the substrate and the rotation axis. The rotation radius is a radius of a circle defined by a region through which the main surface of the substrate passes when the substrate rotates around the rotation axis. The rotation radius direction is a direction along the rotation radius, and is a radial direction along the main surface of the substrate from the rotation center. The inward direction of the rotation radius is a direction closer to the center of rotation than a certain reference point. On the contrary, the outward direction in the rotation radius is a direction away from the center of rotation rather than a certain reference point.

The scrubbing member or the like is a member that directly contacts the main surface of the substrate and scrapes off foreign matter on the surface of the substrate, and may be a sponge or a brush.
“Move the scrub member along the rotational radius” means to change the rotational radial position of the scrub member, and means that the movement trajectory of the scrub member exactly matches one rotational radius. I don't mean. More specifically, the movement path of the scrub member on the main surface of the substrate may draw an arcuate locus passing through the center of rotation of the substrate. When the scrub member is moved along such an arcuate locus, the range of movement of the scrub member may be limited to a range on one side of the rotation center, or may extend over ranges on both sides of the rotation center. .

  The peripheral region of the substrate to be cleaned by the peripheral region cleaning means may be set outside the half of the rotation radius from the rotation center of the substrate, and includes at least the peripheral edge of the substrate. The region to be cleaned of the peripheral region cleaning means may be set so as to clean such a peripheral region exclusively. The outer peripheral portion (outside the half of the radius) may be scanned, or only the edge portion may be scanned.

  The scrub cleaning region on the main surface of the substrate that is cleaned by the movement of the scrub member and the rotation of the substrate is a circular region having a radius larger than half the rotation radius of the substrate with the rotation center of the substrate as the center. The scrub cleaning region is preferably in contact with the peripheral region to be cleaned by the peripheral region cleaning means, and more preferably has an overlapping portion in the rotational radius direction.

  The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein the peripheral area includes an area in contact with the holding member. According to this configuration, since the liquid to which kinetic energy is applied is supplied to the region in contact with the holding member on the substrate surface by the peripheral region cleaning means, the region in contact with the holding member can be cleaned. become. Thereby, the entire area of the substrate surface can be cleaned without any residue.

  A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the peripheral region includes a peripheral end surface of the substrate. According to this configuration, the peripheral region cleaning means can clean the region of the peripheral end surface of the substrate. Thereby, the surface of the substrate can be thoroughly cleaned without leaving foreign matter on the peripheral end surface of the substrate. The substrate has a pair of main surfaces (a front surface and a back surface) parallel to each other, and the pair of main surfaces are coupled to each other via a peripheral end surface. That is, the peripheral end surface is a surface (side surface) that joins between the peripheral edges of the pair of main surfaces of the substrate over the entire circumference. The peripheral end surface may be a surface parallel to the rotational axis, or may be a curved surface curved with respect to the rotational axis (for example, a curved surface bulging outward in the rotational radius direction).

  A fourth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects, wherein the peripheral region cleaning means includes a spray nozzle that sprays a liquid onto the cleaning target region. According to this structure, the peripheral area | region of a board | substrate can be wash | cleaned by spraying a liquid (droplet) from a spray nozzle to a washing | cleaning target area. Further, when the scrub member reaches the cleaning target area, a liquid (droplet) is sprayed onto the scrub member, thereby removing the foreign matter attached to the scrub member. Thereby, a scrub member can be washed.

“Spraying the liquid” means that the liquid in the form of droplets is carried to the area to be cleaned by the gas flow. More specifically, it means that a gas-liquid mixed fluid in which minute droplets are dispersed almost uniformly in a gas is sprayed onto a region to be cleaned.
One specific example of the spray nozzle is a two-fluid nozzle that generates a gas-liquid mixed fluid by mixing gas and liquid and injects the gas-liquid mixed fluid (injects droplets). As a two-fluid nozzle, an internal mixing type that mixes gas and liquid in the nozzle body to generate droplets, and a gas and liquid collide outside the nozzle body and mix them to generate droplets. There is an external mixed type. Either type of two-fluid nozzle is applicable.

  According to a fifth aspect of the present invention, in the substrate processing according to the fourth aspect, the spray nozzle has a discharge port outward in the rotational radius direction from the peripheral end surface of the substrate held by the substrate holding means. Device. According to this configuration, the spray nozzle sprays the liquid toward the cleaning target region set in the peripheral region of the substrate from the discharge port provided on the outer side in the rotational radius direction from the peripheral end surface of the substrate. Therefore, the sprayed liquid reaches not only the region in the vicinity of the periphery of the main surface of the substrate but also the peripheral end surface of the substrate, and drops the foreign matter adhering to the peripheral end surface. As a result, the peripheral end surface of the substrate can be cleaned.

  A sixth aspect of the present invention is the substrate processing apparatus according to the fourth or fifth aspect, wherein the spray nozzle is disposed with a discharge port directed toward a peripheral end surface of the substrate held by the substrate holding means. . According to this configuration, since the discharge port of the spray nozzle is directed to the peripheral end surface of the substrate, the foreign matter attached to the peripheral end surface of the substrate can be reliably washed and removed. In other words, since the kinetic energy of the droplet can be efficiently transmitted to the foreign matter adhering to the peripheral end surface of the substrate, it is possible to promote the removal of the foreign matter.

  According to a seventh aspect of the invention, the substrate holding means is configured to hold the substrate horizontally, and the central axis of the discharge profile of the spray nozzle is from the outer side in the rotational radius direction of the substrate to the inner side. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus is inclined so as to face. With this configuration, droplets discharged from the discharge port of the spray nozzle are incident on the peripheral end surface of the substrate at a relatively large angle, and give large kinetic energy to the foreign matter adhering to the peripheral end surface of the substrate. Thereby, since the foreign material adhering to the peripheral end surface of the substrate is easily dropped, the peripheral end surface of the substrate can be effectively cleaned.

  Invention of Claim 8 includes the ultrasonic vibration liquid supply means in which the said peripheral area | region washing | cleaning means supplies the liquid to which the ultrasonic vibration was provided to the said washing | cleaning object area, Any one of Claims 1-3. The substrate processing apparatus according to claim 1. According to this configuration, the ultrasonic vibration can be applied to the foreign matter adhering to the peripheral area of the substrate by supplying the liquid to which the ultrasonic vibration is applied to the cleaning target area. Thereby, the foreign substance can be removed from the substrate, and the peripheral area of the substrate can be cleaned without contact.

A ninth aspect of the present invention is the substrate processing apparatus according to the eighth aspect, wherein the ultrasonic vibration liquid supply means includes a nozzle for discharging a liquid to which ultrasonic vibration is applied. According to this configuration, the liquid to which the ultrasonic vibration is applied is ejected from the nozzle, the liquid reaches the peripheral area of the substrate, and the foreign matter adhering to the peripheral area is dropped from the substrate surface.
According to a tenth aspect of the present invention, in the ultrasonic vibration liquid supply means, a liquid supply means for supplying a liquid to the cleaning target area and an ultrasonic wave on the main surface of the substrate to the liquid supplied to the cleaning target area The substrate processing apparatus according to claim 8, further comprising an ultrasonic vibration applying unit that applies vibration.

According to this configuration, the liquid is supplied to the cleaning target area set in the peripheral area on the substrate main surface, and ultrasonic vibration is applied to the liquid on the substrate main surface. More specifically, a liquid film may be formed in the peripheral area of the substrate, and ultrasonic vibration may be applied to the liquid film. This ultrasonic vibration propagates to the foreign substance on the substrate surface via the liquid film, and drops the foreign substance from the substrate surface.
According to an eleventh aspect of the present invention, the substrate is rotated by holding the substrate by the substrate holding means having a holding member that contacts the peripheral end surface of the substrate, and rotating the substrate by rotating the substrate holding means around a predetermined rotation axis. Supplying the liquid to which the kinetic energy is applied in parallel with the process and the substrate rotating process to the cleaning target area set so as to be aligned with the peripheral area of the substrate held by the substrate holding means. And a peripheral region cleaning step for cleaning the peripheral region of the substrate by the kinetic energy of the liquid and a peripheral path cleaning step, which are performed in parallel with the rotation center of the substrate and the movement path passing through the cleaning target region. Thus, the scrub member is moved along the rotational radius direction of the substrate while being in contact with the main surface of the substrate within a range radially inward of the holding member. By including a scrubbing step of scrubbing the main surface of the substrate, a substrate processing method.

According to the present invention, the same effect as that of the first aspect of the invention can be attained.
The substrate processing method invention can be modified in the same manner as the substrate processing apparatus invention.

FIG. 1 is a conceptual diagram for explaining the configuration of a substrate processing apparatus according to a first embodiment of the present invention. FIG. 2 is a view for explaining an arrangement example of spray nozzles in the first embodiment. FIG. 3 is a plan view for explaining the moving path of the scrub member and the cleaning target area of the peripheral area cleaning unit. It is a conceptual diagram for demonstrating the structure of the substrate processing apparatus which concerns on 2nd Embodiment of this invention. FIG. 5 is a plan view for explaining the relationship between the moving path of the scrub member and the cleaning target area by the ultrasonic nozzle in the second embodiment. FIG. 6 is a view for explaining the configuration of the substrate processing apparatus according to the third embodiment of the present invention. FIG. 7 is a plan view for explaining the relationship between the moving path of the scrub member and the cleaning target area of the ultrasonic cleaning unit in the third embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a conceptual diagram for explaining the configuration of a substrate processing apparatus according to a first embodiment of the present invention. The substrate processing apparatus 1 includes a spin chuck 2, a scrub cleaning unit 3, a peripheral region cleaning unit 4, and a control unit 5. The spin chuck 2 is a substrate holding unit that holds a circular substrate W such as a semiconductor wafer in a horizontal posture and can rotate around a vertical rotation axis 8. More specifically, the spin chuck 2 includes a disk-shaped spin base 10 arranged along a horizontal plane, and a plurality of holding pins 11 (holding members) provided at intervals around the periphery of the spin base 10. ) And a rotation shaft 12 coupled to the center of the lower surface of the spin base 10 and extending along the rotation axis 8. The rotary shaft 12 is applied with a rotational force from a rotary drive mechanism 13 as a rotating means. The operation of the rotation drive mechanism 13 is controlled by the control unit 5.

  The spin chuck 2 is covered with a scattering prevention cup 6 from below and from the side. The anti-scattering cup 6 is formed in a bottomed container shape, and is configured to be moved up and down by an elevating mechanism (not shown). The splash prevention cup 6 is used to receive and collect or drain the liquid splashed from the substrate W held on the spin chuck 2. When the unprocessed substrate W is transferred to the spin chuck 2 or when the processed substrate W is taken out from the spin chuck 2, the scattering prevention cup 6 is lowered. Thereby, a hand of a substrate transfer robot (not shown) can access the spin chuck 2.

  The scrub cleaning unit 3 is a unit for scrub cleaning the surface of the substrate W by bringing the scrub member 15 into sliding contact with the upper surface of the substrate W held and rotated by the spin chuck 2. The scrub cleaning unit 3 includes a scrub member 15 that contacts the upper surface of the substrate W and a scrub member drive mechanism 16 that drives the scrub member 15. The scrub member driving mechanism 16 is an example of a scrub member moving means, and moves the scrub member 15 between a retracted position where the scrub member 15 is retracted from above the spin chuck and a processing position contacting the substrate W held by the spin chuck 2. If necessary, the scrub member 15 is rotated about a vertical rotation axis. More specifically, the scrub member drive mechanism 16 includes a swing arm 17 that holds the scrub member 15 at the tip, and a pivot shaft that is coupled to the base end of the swing arm 17 and extends along the vertical direction. 18, a swinging mechanism 19 that swings the swinging arm 17 in the horizontal direction by rotating the rotating shaft 18 around its axis, a lifting mechanism 20 that moves the swinging arm 17 up and down, and a scrub member 15. And a rotation mechanism 21 that rotates around the vertical axis. The rotation mechanism 21 includes, for example, an electric motor 22 and a rotation transmission mechanism 23 that transmits the rotation of the electric motor 22 to the scrub member 15. The rotation transmission mechanism 23 may be configured using a pulley and a belt built in the swing arm 17.

  The swing mechanism 19, the elevating mechanism 20, and the rotation mechanism 21 are controlled by the control unit 5. By operating the swing mechanism 19, the swing arm 17 swings along a horizontal plane, whereby the scrub member 15 is moved between the side retracted position of the spin chuck 2 and the processing position on the spin chuck 2. Move horizontally between. Further, if the elevating mechanism 20 is operated when the scrub member 15 is positioned above the substrate W held by the spin chuck 2, the processing height at which the scrub member 15 contacts the upper surface of the substrate W, and the substrate W It moves up and down between retreat heights spaced upward from the top surface of the. The scrub member 15 is in direct contact with the upper surface of the substrate W held by the spin chuck 2 and is moved along a predetermined movement path passing through the center of rotation of the substrate W. Thereby, the position in contact with the substrate W changes in the rotational radius direction of the substrate W. Therefore, if the scrub member 15 is moved along the movement path while rotating the substrate W by the spin chuck 2, scrub cleaning can be performed while the main surface of the substrate W is scanned by the scrub member 15. However, since the holding pin 11 of the spin chuck 2 is in contact with the peripheral end surface of the substrate W, the range of movement of the scrub member 15 is inside the holding pin 11 and does not interfere with the holding pin 11. Limited to

The rotation center of the substrate W is an intersection of the main surface of the substrate W and the rotation axis 8. The rotation radius is a radius of a circle defined by a region through which the main surface of the substrate W passes when the substrate W rotates around the rotation axis 8. The rotation radius direction is a direction along the rotation radius, and is a radial direction along the main surface of the substrate W from the rotation center.
As the scrub member 15, a sponge-like member such as PVA (polyvinyl alcohol) may be applied, or a brush-like member (cleaning brush) may be applied. When the scrub member 15 is moved in the radial direction by swinging the swing arm 17, the scrub member 15 may be rotated by operating the rotation mechanism 21. Further, the scrub cleaning of the substrate W may be performed while moving the scrub member 15 in the rotational radius direction without performing the rotation of the scrub member 15 as described above.

  The peripheral area cleaning unit 4 includes a spray nozzle 25 that sprays liquid and a nozzle moving mechanism 26 that moves the spray nozzle 25. The nozzle moving mechanism 26 includes a swing arm 27 extending along the horizontal direction, a pivot shaft 28 coupled to the base end of the swing arm 27 and extending along the vertical direction, and the pivot shaft 28 as an axis thereof. A swing mechanism 29 that rotates around and a lifting mechanism 30 that moves the swing arm 27 up and down are included. A spray nozzle 25 is coupled to the tip of the swing arm 27. When the swing mechanism 29 is operated, the rotation shaft 28 rotates about its axis, and the swing arm 27 swings in the horizontal direction. Thereby, the spray nozzle 25 moves in the horizontal direction. Further, if the swing arm 27 is moved up and down by the lifting mechanism 30, the spray nozzle 25 can be moved up and down. The swing mechanism 29 and the elevating mechanism 30 are controlled by the control unit 5.

  Due to the action of the nozzle moving mechanism 26, the spray nozzle 25 has a retracted position retracted to the side of the spin chuck 2 and a processing position for spraying liquid onto the peripheral area of the substrate W held by the spin chuck 2. It can be moved between. The spray nozzle 25 is configured to spray the liquid toward the peripheral area of the upper surface of the substrate W held by the spin chuck 2 at the processing position. The peripheral region of the substrate W is a region located outside the half of the rotation radius from the rotation center of the substrate W, and includes a region in the vicinity of a portion where the holding pin 11 and the substrate W are in contact with each other. In particular, the liquid discharged from the spray nozzle 25 also reaches the peripheral region of the substrate W that cannot be scrubbed by the scrub member 15.

  The spray nozzle 25 may have a form of a two-fluid nozzle that generates a gas-liquid mixed fluid generated by mixing a liquid and a gas, for example. That is, the spray nozzle 25 generates a gas-liquid mixed fluid (droplet jet) in which a large number of minute droplets are dispersed almost uniformly in the gas, and the minute droplet group is carried by the gas flow to the substrate W. It is preferable that the liquid is sprayed so as to reach.

  The spray nozzle 25 has a nozzle body 33, and a discharge port 34 formed at the tip of the nozzle body 33 is directed toward the peripheral region of the substrate W. The spray nozzle 25 may be an internal mixing type two-fluid two-fluid nozzle that mixes a liquid and a gas inside the nozzle body 33, or a droplet that collides the gas and the liquid outside the nozzle body 33. An external mixing type two-fluid nozzle that forms a jet may also be used. A gas (for example, an inert gas such as nitrogen gas) is supplied to the nozzle body 33 from a gas supply source 35 via a gas supply path 36. In the middle of the gas supply path 36, a flow rate controller 37 and a gas valve 38 are interposed. The flow rate controller 37 is controlled by the control unit 5 and is configured to adjust the flow rate of the gas passing through the gas supply path 36. The gas valve 38 is configured to open and close a gas flow path in the gas supply path 36, thereby switching supply / stop of gas to the nozzle body 33. The gas valve 38 is controlled by the control unit 5.

The nozzle body 33 is further supplied with liquid from a liquid supply source 40 via a liquid supply path 41. A liquid valve 42 is interposed in the middle of the liquid supply path 41. The liquid valve 42 is controlled by the control unit 5 and opens and closes the liquid flow path in the liquid supply path 41. The liquid supply source 40 supplies pure water (deionized water), for example.
When the gas valve 38 and the liquid valve 42 are opened, the gas and the liquid are mixed in the spray nozzle 25 to form a droplet jet (gas-liquid mixed fluid), and the droplet jet flows from the discharge port 34 to the spin chuck 2. The spray is discharged toward the peripheral area of the substrate W held on the substrate. The jet of droplets is a set of droplets having kinetic energy toward the peripheral region of the substrate W, and foreign matter attached to the peripheral region of the substrate W is dropped by the kinetic energy of the droplets. As a result, the cleaning of the peripheral region of the substrate W can be performed in a non-contact state without any contact of members (particularly rigid bodies).

  FIG. 2 is a diagram for explaining the arrangement example of the spray nozzle 25 in more detail. The spray nozzle 25 has a substantially rotationally symmetrical discharge profile 45. More specifically, the discharge profile 45 may have a conical shape. A central axis 46 defined by the symmetry axis of the discharge profile 45 is inclined so as to be directed inward in the rotational radius direction of the substrate W held and rotated by the spin chuck 2. It intersects the upper surface of the substrate W slightly inward of the holding pins 11. The substrate W has an upper surface Wa and a lower surface Wb, which are a pair of main surfaces parallel to each other, and a peripheral end surface Wc that joins the peripheral edges of the upper surface Wa and the lower surface Wb over the entire circumference. In this embodiment, the peripheral end surface Wc is a curved surface that bulges in the rotational radius direction. The discharge port 34 of the nozzle body 33 is located outward in the rotational radius direction from the peripheral end surface Wc of the substrate W, and faces the peripheral end surface Wc of the substrate W. Accordingly, the discharge profile 45 overlaps the peripheral edge portion of the upper surface Wa of the substrate W and the peripheral end surface Wc of the substrate W. Therefore, the droplet jet (gas-liquid mixed fluid) discharged from the discharge port 34 of the spray nozzle 25 reaches the peripheral portion of the upper surface Wa of the substrate W and the peripheral end surface Wc of the substrate W, and the peripheral region including these regions Collide with.

  FIG. 3 is a plan view for explaining the moving path of the scrub member 15 and the cleaning target area of the peripheral area cleaning unit 4. When the spray nozzle 25 is disposed at the processing position, a cleaning target region 48 is defined in a region where the upper surface of the substrate W and the discharge profile 45 intersect. The moving path 50 of the scrub member 15 is set so as to pass through the rotation center 51 of the substrate W and the cleaning target area 48. On the moving path 50, the scrub member 15 is in the scan range 53 between the rotation center 51 and the scan end position 52 set in the cleaning target area 48 and inward in the radial direction of rotation than the holding pin 11. Go back and forth with (half scan). However, the scan range may be set to a range 55 up to another scan end position 54 set on the opposite side of the scan end position 52 with respect to the rotation center 51 (full scan). The scan end position 54 is set in the peripheral area of the substrate W on the side opposite to the cleaning target area 48 with respect to the rotation center 51. The scanning end positions 52 and 54 are set at positions where the holding pin 11 and the scrub member 15 do not interfere with each other. The scan end position 52 located in the cleaning target area 48 is preferably set so that at least a part (preferably all) of the scrub member 15 enters the cleaning target area 48.

  The control unit 5 controls the scrub member drive mechanism 16 to reciprocate within the scan ranges 53 and 55 while the scrub member 15 is in contact with the upper surface of the substrate W held by the spin chuck 2. At the same time, the control unit 5 controls the nozzle moving mechanism 26, the gas valve 38, and the liquid valve 42 to spray the liquid from the spray nozzle 25 toward the cleaning target area 48. In this way, scrub cleaning for the central region and a part of the peripheral region of the substrate W by the scrub member 15 and spray cleaning for the peripheral region by the spray nozzle 25 are simultaneously performed. When the scrub member 15 moves along the movement path 50, when the scan end position 52 is reached, the droplet jet discharged from the spray nozzle 25 toward the cleaning target region 48 also collides with the scrub member 15. As a result, the foreign matter accumulated in the scrub member 15 is removed from the scrub member 15 and the scrub member 15 is cleaned.

The control unit 5 may rotate the scrub member 15 by the rotation mechanism 21 when the scrub member 15 reaches the cleaning target area 48 or at all times. Accordingly, since the entire circumference of the scrub member 15 can be spray-cleaned in the cleaning target area 48, the contaminants attached to the scrub member 15 can be efficiently removed.
As described above, according to this embodiment, scrub cleaning for the central region and a part of the peripheral region of the substrate W by the scrub member 15 and spray cleaning of the peripheral region by the spray nozzle 25 can be performed in parallel. Therefore, the cleaning of the entire surface of the substrate W can be completed in a short time. In addition, the peripheral region of the substrate W can be cleaned without being left unwashed by the non-contact cleaning by spray cleaning without bringing another member into contact with the holding pin 11. Furthermore, since the scan ranges 53 and 55 of the scrub member 15 are determined so as to overlap with the region 48 to be cleaned, the scrub member 15 can be cleaned by the droplet jet from the spray nozzle 25. That is, the scrub member 15 can be kept in a clean state without providing a dedicated cleaning unit for the scrub member 15, and precise substrate cleaning with high cleanliness can be realized. Further, since the scrub member 15 can be maintained in a clean state, the replacement cycle of the scrub member 15 can be lengthened, so that the running cost can be reduced. In addition, since a cleaning unit for the scrub member 15 is not required, the apparatus cost can be reduced.
According to this configuration, the peripheral region cleaning means can clean the region of the peripheral end surface of the substrate. Thereby, the surface of the substrate can be thoroughly cleaned without leaving foreign matter on the peripheral end surface of the substrate.

  Further, in this embodiment, the spray nozzle 25 sprays and discharges liquid from the discharge port 34 provided on the outer side in the rotational radius direction from the peripheral end surface Wc of the substrate W, and the central axis 46 of the discharge profile 45 is The discharge port 34 is directed toward the peripheral end surface Wc of the substrate W so as to incline from the outside in the rotation radius direction of W toward the inside. Therefore, the droplet jet discharged from the discharge port 34 is incident on the peripheral end surface Wc of the substrate W at a relatively large angle, and gives large kinetic energy to the foreign matter adhering to the peripheral end surface Wc. Thereby, since the foreign material adhering to the peripheral end surface Wc is likely to drop off, the peripheral end surface Wc can be effectively cleaned.

  FIG. 4 is a conceptual diagram for explaining the configuration of a substrate processing apparatus according to the second embodiment of the present invention. In FIG. 4, the same reference numerals are assigned to the corresponding parts in FIG. Similar to the substrate processing apparatus 1 of the first embodiment, the substrate processing apparatus 60 includes a spin chuck 2, a scrub cleaning unit 3, and a control unit 5. Further, the substrate processing apparatus 60 includes a peripheral region cleaning unit 64 having a configuration different from that of the peripheral region cleaning unit 4 of the first embodiment. The peripheral area cleaning unit 64 includes an ultrasonic nozzle 65 instead of the spray nozzle 25. The ultrasonic nozzle 65 is an example of an ultrasonic vibration liquid supply unit, and is configured to discharge a liquid to which ultrasonic vibration is applied toward the peripheral region on the upper surface of the substrate W held by the spin chuck 2. And is coupled to the tip of the swing arm 27. That is, the ultrasonic nozzle 65 is configured to be swung horizontally and moved up and down by the nozzle moving mechanism 26. The ultrasonic nozzle 65 is supplied with the liquid from the liquid supply source 40 via the liquid supply path 41, and the liquid supply path 41 is provided with a liquid valve 42. The ultrasonic nozzle 65 includes a nozzle body 66 and an ultrasonic vibrator 67 incorporated in the nozzle body 66. The ultrasonic vibrator 67 applies ultrasonic vibration to the liquid passing through the liquid flow path 68 formed in the nozzle body 66. The liquid channel 68 is coupled to the liquid supply channel 41. The ultrasonic vibrator 67 is driven by electric power supplied from the drive circuit 62. The drive circuit 62 is controlled by the control unit 5. A discharge port 69 is formed in the nozzle body 66 of the ultrasonic nozzle 65, and a liquid to which ultrasonic vibration is applied from the discharge port 69 toward the peripheral region of the upper surface of the substrate W held by the spin chuck 2. Is supplied.

  FIG. 5 is a plan view for explaining the relationship between the moving path of the scrub member 15 and the region 70 to be cleaned by the ultrasonic nozzle 65. In FIG. 5, the corresponding parts in FIG. The liquid discharged from the discharge port 69 of the ultrasonic nozzle 65 is supplied to the cleaning target area 70 set so as to overlap the peripheral area on the upper surface of the substrate W held by the spin chuck 2. The cleaning target area 70 extends from the peripheral edge of the upper surface of the substrate W to the peripheral end surface of the substrate W. The liquid supplied to the upper surface of the substrate W is carried downstream in the rotation direction as the substrate W rotates. Therefore, the cleaning target area 70 has a shape extending from the liquid landing position to the downstream side in the rotation direction of the substrate W. The liquid ejected from the ultrasonic nozzle 65 is supplied to the cleaning target area 70, and the foreign matter attached to the surface of the substrate W is dropped and removed by the ultrasonic vibration applied to the liquid. .

  The movement path 50 of the scrub member 15 is set so as to pass through the rotation center 51 of the substrate W and the cleaning target area 70, and the scan end position 52 of the scan range 53 is located within the cleaning target area 70. Yes. Therefore, as in the case of the first embodiment, the scrub member 15 can be cleaned when the scrub member 15 reaches the cleaning target area 70. More specifically, when the scrub member 15 comes into contact with the liquid to which ultrasonic vibration is applied, the ultrasonic vibration is applied to the foreign matter adhering to the scrub member 15, and the foreign matter is removed from the scrub member 15 by the ultrasonic vibration. Falls off. In this way, the scrub member 15 is cleaned. The scan end position 52 located in the cleaning target area 70 is preferably set so that at least a part (preferably all) of the scrub member 15 enters the cleaning target area 70.

  FIG. 6 is a view for explaining the configuration of a substrate processing apparatus according to the third embodiment of the present invention, and an ultrasonic cleaning unit 75 that can be used in place of the ultrasonic nozzle 65 in the second embodiment. The configuration of is shown. FIG. 7 is a plan view for explaining the relationship between the moving path 50 of the scrub member 15 and the cleaning target area 85 of the ultrasonic cleaning unit 75. 6 and 7, parts corresponding to those shown in FIGS. 4 and 5 are denoted by the same reference numerals.

  The ultrasonic cleaning unit 75 is an example of ultrasonic vibration liquid supply means, and includes a bracket 76 held by the swing arm 27, a liquid nozzle 77 (liquid supply means) held by the bracket 76, and an ultrasonic head 78 ( Ultrasonic vibration imparting means). The liquid nozzle 77 is a straight nozzle that supplies liquid (for example, pure water) in the form of a continuous flow toward the peripheral region of the substrate W, and the liquid is supplied from the liquid supply source 40 via the liquid supply path 41. It has become. A liquid valve 42 is interposed in the middle of the liquid supply path 41. The ultrasonic head 78 includes an ultrasonic vibrator 79 and a vibrating body 80 that is vibrated by the ultrasonic vibrator 79. The ultrasonic transducer 79 is configured to vibrate ultrasonically upon receiving power supply from the drive circuit 73 controlled by the control unit 5. The vibrating body 80 has a substrate facing surface 81 facing the substrate W held by the spin chuck 2, and the substrate facing surface 81 forms a flat surface along a horizontal plane so as to be parallel to the upper surface of the substrate W. Yes. The vibrating body 80 may be made of quartz, for example.

  When processing the substrate W, the control unit 5 controls the nozzle moving mechanism 26 so that the substrate facing surface 81 of the vibrating body 80 faces the peripheral region of the substrate W. At this time, a gap G larger than the height of the head of the holding pin 11 with respect to the upper surface of the substrate W is opened between the substrate facing surface 81 and the substrate W. That is, the substrate facing surface 81 is disposed at a position higher than the head of the holding pin 11. The gap G between the substrate facing surface 81 and the substrate W is set such that a liquid meniscus 83 supplied from the liquid nozzle 77 is formed between them. The liquid nozzle 77 is supported by the bracket 76 so as to discharge liquid toward the upper surface of the substrate W upstream of the substrate facing surface 81 in the rotation direction. When the ultrasonic vibrator 79 is driven while the liquid valve 42 is opened and liquid is discharged from the liquid nozzle 77 to the peripheral region of the substrate W, the vibrating body 80 generates ultrasonic vibration, and the substrate-facing surface 81 and the substrate W are separated. Ultrasonic vibration is applied to the meniscus 83 formed in the above. Therefore, the foreign matter adhering to the peripheral portion of the substrate W is dropped by the ultrasonic vibration of the liquid constituting the meniscus 83, and thereby the cleaning of the peripheral region of the substrate W is achieved. The substrate facing surface 81 is disposed so as to face a range including the peripheral end surface of the substrate W, whereby the meniscus 83 is also formed in a region near the contact portion between the holding pin 11 and the substrate W. Accordingly, the peripheral region of the substrate W is not left in the region near the holding pin 11 by the liquid to which the ultrasonic vibration is applied without bringing another member into contact with the holding pin 11. Can be washed.

  As shown in FIG. 7, the movement path 50 of the scrub member 15 is set so as to pass through the rotation center 51 and the cleaning target area 85 of the ultrasonic cleaning unit 75, and the scan end position 52 of the scrub member 15 is cleaned. It is located in the target area 85. More specifically, since the substrate W is rotated by the spin chuck 2, the cleaning target area 85 of the ultrasonic cleaning unit 75 is not limited to just below the vibrating body 80, but from the area directly below the vibrating body 80. It spreads downstream in the direction of rotation. Although the meniscus 83 is not formed on the downstream side of the vibrating body 80, ultrasonic vibrations remain in the liquid that flows out from the meniscus 83 to the downstream side in the rotation direction of the substrate W. A region covered with the liquid in which such ultrasonic vibration remains is included in the cleaning target region 85. The scan end position 52 of the scrub member 15 is located in the cleaning target area 85 on the downstream side in the rotation direction of the substrate W with respect to the vibrating body 80. The scan end position 52 located in the cleaning target area 85 is preferably set so that at least a part (preferably all) of the scrub member 15 enters the cleaning target area 85.

With such a configuration, when the scrub member 15 is reciprocally scanned in the scan ranges 53 and 55, the liquid to which ultrasonic vibration is applied can be supplied to the scrub member 15 in the cleaning target region 85. Thereby, since the foreign material adhering to the scrub member 15 falls off by ultrasonic vibration, the scrub member 15 can be periodically cleaned.
As mentioned above, although embodiment of this invention was described, this invention can also be implemented with another form. For example, in the above-described first embodiment, the spray nozzle 25 is arranged such that the central axis 46 of the discharge profile 45 is inclined with respect to the main surface of the substrate W. However, the spray nozzle 25 may be arranged such that the central axis 46 of the discharge profile 45 is perpendicular to the main surface of the substrate W. Furthermore, when the spray nozzle 25 is disposed at an inclination, the central axis 46 of the discharge profile 45 does not need to be inclined toward the rotation center 51 of the substrate W. For example, the central axis 46 rotates in a plan view. The direction may deviate from the center 51. More preferably, the spray nozzle 25 may be inclined toward the peripheral end surface of the substrate W and may be inclined toward the downstream side in the rotation direction of the substrate W. Thereby, since the foreign material which peeled from the peripheral end surface of the board | substrate W can be pushed away to the rotation direction downstream side, a smooth foreign material removal is attained.

In the above-described embodiment, the peripheral region cleaning unit using the spray nozzle 25, the ultrasonic nozzle 65, or the ultrasonic head 78 is shown. However, in addition to these, a high-pressure jet nozzle that discharges a liquid flow at high pressure is also used. As described above, the cleaning unit that removes the foreign matter on the substrate by the kinetic energy of the liquid is applicable as the peripheral region cleaning unit.
In the above-described embodiment, the cleaning target area of the peripheral area cleaning unit is set to be substantially stationary on the substrate W. However, the spray nozzle 25, the ultrasonic nozzle 65, or the ultrasonic head 78 is illustrated. May be reciprocated in a minute range along the rotational radius direction of the substrate W.

  In addition, various design changes can be made within the scope of matters described in the claims.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Spin chuck 3 Scrub cleaning unit 4 Peripheral area cleaning unit 5 Control unit 6 Spattering prevention cup 8 Rotating axis 10 Spin base 11 Holding pin 12 Rotating shaft 13 Rotation driving mechanism 15 Scrub member 16 Scrub member driving mechanism 17 Oscillation Arm 17 Oscillating mechanism 18 Rotating shaft 19 Oscillating mechanism 20 Elevating mechanism 21 Auto rotating mechanism 22 Electric motor 23 Rotation transmission mechanism 25 Spray nozzle 26 Nozzle moving mechanism 27 Oscillating arm 28 Rotating shaft 29 Oscillating mechanism 30 Elevating mechanism 33 Nozzle Body 34 Discharge port 35 Gas supply source 36 Gas supply path 37 Flow rate controller 38 Gas valve 40 Liquid supply source 41 Liquid supply path 42 Liquid valve 45 Discharge profile 46 Central axis 48 Cleaning target area 50 Movement path 51 Rotation center 52 Scan end position 53 scan range (half scan)
54 Scan end position 55 Scan range (full scan)
DESCRIPTION OF SYMBOLS 60 Substrate processing apparatus 62 Drive circuit 64 Peripheral area | region washing | cleaning unit 65 Ultrasonic nozzle 66 Nozzle body 67 Ultrasonic vibrator 68 Liquid flow path 69 Ejection port 70 Cleaning object area 73 Drive circuit 75 Ultrasonic washing unit 76 Bracket 77 Liquid nozzle 78 Super Sonic head 79 Ultrasonic vibrator 80 Vibrating body 81 Substrate facing surface 83 Meniscus 85 Area to be cleaned G Interval W Substrate Wa Upper surface Wb Lower surface Wc Peripheral end surface

Claims (11)

  1. Substrate holding means having a holding member in contact with the peripheral end surface of the substrate;
    Rotating means for rotating the substrate holding means around a predetermined rotation axis;
    A scrub member for scrubbing the main surface in contact with the main surface of the substrate held by the substrate holding means;
    Kinetic energy possessed by the liquid having a cleaning target area set so as to be aligned with the peripheral area of the substrate held by the substrate holding means and supplying the liquid to which the kinetic energy has been applied to the cleaning target area A peripheral region cleaning means for cleaning the peripheral region of the substrate by:
    During the period in which the peripheral region of the substrate is cleaned by the peripheral region cleaning means, in the range of the rotational radius inward of the holding member along the movement path passing through the rotation center of the substrate and the cleaning target region. And a scrubbing member moving means for moving along the radial direction of the substrate while the scrubbing member is brought into contact with the main surface of the substrate.
  2.   The substrate processing apparatus according to claim 1, wherein the peripheral area includes an area in contact with the holding member.
  3.   The substrate processing apparatus according to claim 1, wherein the peripheral region includes a peripheral end surface of the substrate.
  4.   The substrate processing apparatus according to claim 1, wherein the peripheral region cleaning unit includes a spray nozzle that sprays a liquid onto the cleaning target region.
  5.   5. The substrate processing apparatus according to claim 4, wherein the spray nozzle has a discharge port on the outer side in the rotational radial direction than the peripheral end surface of the substrate held by the substrate holding means.
  6.   The substrate processing apparatus according to claim 4, wherein the spray nozzle is disposed with a discharge port directed toward a peripheral end surface of the substrate held by the substrate holding means.
  7. The substrate holding means is configured to hold the substrate horizontally;
    The substrate processing apparatus according to claim 5, wherein a central axis of a discharge profile of the spray nozzle is inclined so as to be directed inward from an outer side in a rotational radius direction of the substrate.
  8.   The substrate processing apparatus according to claim 1, wherein the peripheral region cleaning unit includes an ultrasonic vibration liquid supply unit that supplies a liquid to which ultrasonic vibration is applied to the cleaning target region.
  9.   The substrate processing apparatus according to claim 8, wherein the ultrasonic vibration liquid supply unit includes a nozzle that discharges a liquid to which ultrasonic vibration is applied.
  10.   The ultrasonic vibration liquid supply means provides a liquid supply means for supplying a liquid to the cleaning target area, and an ultrasonic vibration application for applying an ultrasonic vibration on the main surface of the substrate to the liquid supplied to the cleaning target area. The substrate processing apparatus according to claim 8, further comprising: means.
  11. A substrate rotating step of holding the substrate with a substrate holding means having a holding member that contacts the peripheral end surface of the substrate, and rotating the substrate by rotating the substrate holding means around a predetermined rotation axis;
    By supplying the liquid, which is executed in parallel with the substrate rotation step and imparted kinetic energy, to the cleaning target area set so as to be aligned with the peripheral area of the substrate held by the substrate holding means, the liquid A peripheral region cleaning step of cleaning the peripheral region of the substrate by kinetic energy possessed by,
    The scrub member is executed in parallel with the peripheral region cleaning step, and the scrub member is moved inwardly in the rotational radial direction with respect to the holding member along the movement path passing through the rotation center of the substrate and the region to be cleaned. And a scrub cleaning step of scrub cleaning the main surface of the substrate by moving along the radial direction of rotation of the substrate while being in contact with the main surface of the substrate.
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Publication number Priority date Publication date Assignee Title
JP2016107272A (en) * 2014-12-02 2016-06-20 株式会社Screenホールディングス Substrate processing device and substrate processing method
WO2017154673A1 (en) * 2016-03-08 2017-09-14 株式会社荏原製作所 Substrate cleaning device, substrate cleaning method, substrate processing device, and substrate drying device
US9838575B2 (en) 2015-07-29 2017-12-05 SCREEN Holdings Co., Ltd. Flow-down determination method, flow-down determination apparatus and discharge apparatus
US9947555B2 (en) 2015-08-06 2018-04-17 Toshiba Memory Corporation Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
US9975247B2 (en) 2014-09-26 2018-05-22 SCREEN Holdings Co., Ltd. Position detection apparatus, substrate processing apparatus, position detection method and substrate processing method
US10065208B2 (en) 2015-11-10 2018-09-04 SCREEN Holdings Co., Ltd. Discharge determination method and discharge apparatus

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JPH11238713A (en) * 1998-02-20 1999-08-31 Tokyo Electron Ltd Cleaner
JP2001334221A (en) * 2000-05-26 2001-12-04 Dainippon Screen Mfg Co Ltd Substrate cleaning apparatus
JP2003001199A (en) * 2001-06-18 2003-01-07 Dainippon Screen Mfg Co Ltd Substrate washing unit
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JPH0786222A (en) * 1993-09-16 1995-03-31 Tokyo Ohka Kogyo Co Ltd Substrate cleaning device
JPH11238713A (en) * 1998-02-20 1999-08-31 Tokyo Electron Ltd Cleaner
JP2001334221A (en) * 2000-05-26 2001-12-04 Dainippon Screen Mfg Co Ltd Substrate cleaning apparatus
JP2003001199A (en) * 2001-06-18 2003-01-07 Dainippon Screen Mfg Co Ltd Substrate washing unit
JP2008198881A (en) * 2007-02-15 2008-08-28 Sokudo:Kk Substrate processing apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9975247B2 (en) 2014-09-26 2018-05-22 SCREEN Holdings Co., Ltd. Position detection apparatus, substrate processing apparatus, position detection method and substrate processing method
JP2016107272A (en) * 2014-12-02 2016-06-20 株式会社Screenホールディングス Substrate processing device and substrate processing method
US9838575B2 (en) 2015-07-29 2017-12-05 SCREEN Holdings Co., Ltd. Flow-down determination method, flow-down determination apparatus and discharge apparatus
US9947555B2 (en) 2015-08-06 2018-04-17 Toshiba Memory Corporation Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
US10065208B2 (en) 2015-11-10 2018-09-04 SCREEN Holdings Co., Ltd. Discharge determination method and discharge apparatus
WO2017154673A1 (en) * 2016-03-08 2017-09-14 株式会社荏原製作所 Substrate cleaning device, substrate cleaning method, substrate processing device, and substrate drying device

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