JP2013183129A - Substrate for mounting light emitting element and light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate for mounting a light emitting element which achieves excellent heat dissipation, suppresses reflection light on a surface of the substrate, and improves the directivity of obtained light.SOLUTION: A substrate for mounting a light emitting element 1 includes: a substrate body 2 which is formed by a sintered body of a glass ceramic composition containing glass powder and a ceramic filler and has a mounting part 22 of the light emitting element; and a light absorption layer 8 that is formed in a region enclosing the mounting part 22 and absorbs light emitted from the light emitting element. The light absorption layer 8 is formed by a glass powder sintered body containing a light absorptive material.

Description

  The present invention relates to a light emitting element mounting substrate and a light emitting device.

  In recent years, light emitting devices using light emitting diode elements have been used as backlights for mobile phones and large liquid crystal TVs as light emitting diode elements (hereinafter referred to as LEDs) become brighter and whiter. In recent years, the use of light-emitting devices using LEDs as light sources for automobile headlights, projectors, floodlights, and the like that require higher luminance has been studied. However, the amount of heat generation increases as the brightness of the LED increases, and the temperature rises excessively, so that sufficient light emission brightness cannot always be obtained. For this reason, what is required as a light emitting element mounting substrate for mounting a light emitting element such as an LED is one that can quickly dissipate heat generated from the light emitting element and obtain sufficient light emission luminance. Hereinafter, the “light emitting element mounting substrate” is also referred to as “LED substrate”.

  Conventionally, for example, an alumina substrate is used as the LED substrate. In addition, since the thermal conductivity of the alumina substrate is not necessarily as high as about 15 to 20 W / m · K, the use of an aluminum nitride substrate having a higher thermal conductivity has been studied.

  Among the light-emitting devices described above, for example, in a headlight of an automobile, when the light source is viewed from the front, it may feel very dazzling (glare) and cause discomfort to the eyes. For this reason, for example, in a headlight for a low beam, the amount of light emitted toward the front of the light source is secured to some extent, while the reflected light emitted toward directions other than the front of the light source is suppressed, and the light beam direction Therefore, it is required to obtain light with high directivity. Such characteristics are also required for, for example, projectors in addition to automobile headlights.

  However, since the aluminum nitride substrate has a reflectance of about 60% with respect to visible light, a part of light emitted from the light emitting element to the substrate side is reflected on the surface of the aluminum nitride substrate. As shown in FIG. 12, the amount of light L emitted in a direction other than the front surface of the light emitting element is increased, and light having a desired light distribution characteristic with high directivity in the front direction cannot be obtained. There is.

  In recent years, use of a low-temperature co-fired ceramic substrate (hereinafter referred to as an LTCC substrate) has been studied as an LED substrate. The LTCC substrate is lower in cost than the aluminum nitride substrate, and by forming through conductors inside the substrate, heat dissipation equivalent to that of aluminum nitride can be obtained. It is possible to emit light.

  However, the LTCC substrate is made of glass and ceramic filler, and light emitted toward the substrate is reflected in various directions due to the difference in refractive index between the glass and ceramic filler. There is a problem that the obtained light is scattered as a whole and light having high directivity cannot be obtained.

  As an optical semiconductor device that suppresses the glare on the upper side, a device in which a ring-shaped side wall is provided so as to surround the periphery of a submount substrate made of aluminum nitride on which an LED is mounted has been proposed ( For example, see Patent Document 1).

  However, in the optical semiconductor device of Patent Document 1, since a part of the light reflected on the surface of the submount substrate 2 is emitted in an oblique direction beyond the side wall 10, the directivity of light in the front direction is sufficiently enhanced. There wasn't.

  On the other hand, a light-emitting element array device in which a light absorption layer made of oil-based ink is provided on the upper surface of a transparent resin formed from the upper surface of the LED to the upper surface side of the substrate as a means for suppressing the incidence of scattered light on the substrate side Has been proposed (see, for example, Patent Document 2). In addition, the light-reflective first covering member surrounds the light-transmitting member side surface and the light-emitting element so as to suppress stray light components such as return light while increasing the luminance of the light emitted from the light-emitting element, In addition, a light-emitting device in which a light-absorbing second covering member is provided has been proposed (see, for example, Patent Document 3).

  However, even in Patent Documents 2 and 3, it is difficult to completely block the incident light on the substrate surface, and variations in the direction of the light beam remain due to the reflected light on the substrate surface, and the directivity of the obtained light is sufficient. Could not be increased.

  Further, as a means for reducing scattered light emitted to the outside, a light emitting device is proposed in which the surface of the lead frame excluding the periphery of the light emitting element is covered with an antireflection material (see, for example, Patent Document 4). ).

  However, in the light emitting device described in Patent Document 4, since the antireflection material 16 is formed of a black resin, sufficient durability is obtained when applied to a light source that requires light emission with high luminance as described above. It was difficult to put it to practical use.

JP 2011-77263 A JP-A-7-251525 JP 2010-157638 A Utility Model Registration No. 2556821

  The present invention has been made in order to solve the above-described problem, and is for mounting a light-emitting element that is excellent in heat dissipation, has little reflected light on the substrate surface, and can enhance the directivity of the obtained light. The purpose is to provide a substrate. Another object of the present invention is to obtain a light emitting device using the light emitting element mounting substrate.

  The substrate for mounting a light emitting element of the present invention comprises a sintered body of a glass ceramic composition containing glass powder and a ceramic filler, and includes a substrate body having a light emitting element mounting portion, and a light emitting element mounting portion of the substrate body. And a light absorbing layer that absorbs light emitted from the light emitting element, and the light absorbing layer is made of a glass powder sintered body containing a light absorbing material.

  The light emitting device of the present invention includes the above-described light emitting element mounting substrate of the present invention and a light emitting element mounted on a mounting portion of the light emitting element mounting substrate.

  ADVANTAGE OF THE INVENTION According to this invention, it can be set as the light emitting element mounting substrate which can reduce the reflected light on the board | substrate surface, has high directivity to a front direction, and can obtain high-intensity light. Further, according to the present invention, by mounting a light emitting element on such a light emitting element mounting substrate, a light emitting device having high directivity in the front direction and high luminance light can be obtained.

It is the top view which looked at one Embodiment of the board | substrate for LED of this invention from the top. It is XX sectional drawing of the board | substrate for LED shown in FIG. It is the sectional view on the AA line of the board | substrate for LED shown in FIG. It is the YY sectional view taken on the line of the board | substrate for LED shown in FIG. It is the top view which looked at the board | substrate for LED shown in FIG. 1 from the bottom. It is sectional drawing of one Embodiment of the light-emitting device of this invention. It is sectional drawing which shows an example of the manufacturing method of the board | substrate for LED. It is a figure which shows the light distribution curve of the light-emitting device which concerns on one Embodiment of this invention. It is a figure which shows the light distribution curve of the light-emitting device which has the board | substrate for LED of the conventional structure used for the comparison in the Example. It is a figure which shows the light distribution curve of the light-emitting device which has the board | substrate for LED of the conventional structure used for the comparison in the Example. It is a figure which shows typically the method of measuring the light distribution characteristic of the light obtained from a light-emitting device. It is a figure which shows the cross section of the light-emitting device which has the board | substrate for LED of a conventional structure.

  FIG. 1 is a plan view of an embodiment of an LED substrate as a light-emitting element mounting substrate according to the present invention as viewed from above, and FIG. 2 is a cross-sectional view of the LED substrate shown in FIG. 3 is a cross-sectional view taken along line AA of the LED substrate shown in FIG. 1, FIG. 4 is a cross-sectional view taken along line YY of the LED substrate shown in FIG. 1, and FIG. It is the top view which looked at the board | substrate for LED shown to from the bottom.

The LED substrate 1 has a substantially flat plate-like substrate body 2 having a rectangular planar shape. In the present specification, “substantially flat plate” means a flat plate at the visual level. Hereinafter, “substantially” indicates a visual level.
In addition, in this specification, the “wiring conductor” included in the element substrate is an electric circuit provided so as to be electrically connected to the wiring circuit of the circuit board through the electrode included in the light emitting element to be mounted. All conductors related to wiring, for example, element connection terminals connected to electrodes of light emitting elements, inner layer wiring (including through conductors penetrating the board) provided inside the board, and external connected to the wiring circuit of the circuit board It is used as a generic term for connection terminals and the like.

  The substrate body 2 is made of a sintered body of a glass ceramic composition containing glass powder and a ceramic filler, and has a frame 3 on the peripheral edge of one surface of the substrate body 2.

  The shape, thickness, size and the like of the substrate body 2 are not particularly limited, and can be changed according to the design of the light emitting device, such as the number of light emitting elements to be mounted and the arrangement method. Moreover, the raw material composition, sintering conditions, etc. of the sintered body of the glass ceramic composition containing the glass powder and the ceramic filler constituting the substrate body 2 will be described in the method for manufacturing the LED substrate 1 described later. The substrate body 2 preferably has a bending strength of, for example, 250 MPa or more from the viewpoint of suppressing damage or the like when the light-emitting element is mounted or after use.

  In the substrate main body 2, a cavity having a substantially rectangular planar shape is formed by the frame body 3, and the bottom surface of the cavity is a mounting surface 21 on which the light emitting element is mounted. Three mounting portions 22 on which the light emitting elements are actually mounted are connected in the horizontal direction at a substantially central portion of the mounting surface 21. The other surface of the mounting surface 21 is a non-mounting surface 23 on which no light emitting element is mounted. In addition, although the material which comprises the frame 3 is not specifically limited, The same thing as the material which comprises the board | substrate body 2 is preferable.

  On the mounting surface 21, a pair of element connection terminals 4 respectively electrically connected to a pair of electrodes included in the light emitting element to be mounted are arranged so as to face both sides across each mounting portion 22, On the non-mounting surface 23, a pair of external electrodes 5 that are electrically connected to an external circuit when facing the light emitting device are provided so as to face the longitudinal direction of the substrate body 2. These external electrodes 5 are electrically connected to the element connection terminals 4 formed on the mounting surface 21 of the substrate body 2 via connection vias 6 and inner wiring layers 13 formed inside the substrate body 2 and the like, respectively. ing.

The inner wiring layer 13 is embedded in the substrate body 2 in, for example, a rectangular shape below each of the three element connection terminals 4 connected in the longitudinal direction of the mounting surface 21.
This will be described with reference to FIGS. The connection via 6 is composed of an upper connection via 6 a formed from the mounting surface 21 to the upper surface of the inner wiring layer 13 and a lower connection via 6 b formed from the lower surface of the inner wiring layer 13 to the non-mounting surface 23. The upper connection via 6a is electrically connected to the inner wiring layer 13, and the inner wiring layer 13 is electrically connected to the lower connection via 6b.

  The arrangement positions and shapes of the element connection terminals 4, the external electrodes 5 and the connection vias 6 are shown in FIG. 1 as long as they are electrically connected to one of the element connection terminal 4 → the connection via 6 → the external electrode 5. It is not limited to a thing, It can adjust suitably.

  The constituent materials of the element connection terminals 4, the external electrodes 5, the connection vias 6 and the inner layer wiring layer 13 which are wiring conductors are usually used without particular limitation as long as they are the same constituent materials as the wiring conductors used for the element substrate. it can. Specifically, the constituent material of these wiring conductors is a metal material mainly containing at least one of copper, silver, gold and the like. Among such metal materials, a metal material composed of silver, silver and platinum, or silver and palladium is preferable.

  In the external electrode 5, a conductive protective layer (not shown) that protects the layer from oxidation and sulfurization and has conductivity on the metal conductor layer made of the metal material can be formed. The conductive protective layer is not particularly limited as long as it is a conductive material having a function of protecting the metal conductor layer, but a nickel plating layer, a nickel / gold plating layer, a silver plating layer, a nickel / silver plating layer, A chromium plating layer or the like is preferable, and a nickel / gold plating layer is particularly preferable.

  Further, from the viewpoint of obtaining good bonding with a bonding wire to be described later, a conductive protective layer such as a gold plating layer or a nickel / gold plating layer obtained by performing gold plating on the nickel plating (see FIG. (Not shown) is preferred.

  A thermal via 7 for reducing the thermal resistance of the substrate body 2 is embedded in the substrate body 2 (see FIG. 2). The thermal via 7 is, for example, a pillar having a cross-sectional area substantially the same as the area of the mounting portion 22, and is not mounted from the mounting surface 21 so as not to reach the non-mounting surface 23 at a position immediately below the mounting portion 22. A plurality are provided in the vicinity of the surface 23.

  In the LED substrate 1 of the present invention, the position, shape, size, number, etc., of the thermal vias 7 are not limited to those shown in FIG.

  In a region surrounding the mounting portion 22 of the substrate body 2, the light absorption layer 8 is provided except for the position where the element connection terminals 4 are formed.

  The light absorption layer 8 is composed of a glass powder sintered body containing a light absorption material, and is formed so as to cover substantially the entire mounting surface 21 except for the mounting region 22 and the region where the element connection terminals 4 are formed. Yes.

  The light absorption layer 8 is not particularly limited as long as it is mainly composed of a glass powder sintered body and contains a light absorption material. From the viewpoint of obtaining good light absorption characteristics for light in the visible light range, the light absorption layer 8 is black. The body is preferred.

  By providing such a light absorption layer 8 in a region surrounding the mounting portion 22 of the substrate body 2, the light absorption layer 8 is emitted from the light emitting element 9 toward the substrate body 2 side and enters the light absorption layer 8 as shown in FIG. 6. Since the light L1 thus absorbed is absorbed by the light absorption layer 8 including the light absorbing material, the light reaching the main surface of the substrate body 2, that is, the mounting surface 21, can be significantly reduced. Thereby, in the board | substrate body 2, the reflected light in the area | region surrounding the mounting part 22 can be reduced significantly, there is little quantity of the light radiate | emitted toward directions other than directly above a light emitting element, ie, directions other than a front, and light source It is possible to obtain light with high directivity in which the ratio of the light L2 emitted toward the front direction is increased.

  The light absorption layer 8 may be formed in a region surrounding the mounting portion 22 of the substrate body 2. However, as shown in FIG. 1, the mounting portion 22 and the element connection terminals 4 are formed so as to surround the mounting portion 22. By forming the light absorption layer 8 over the entire mounting surface 21 excluding the region, most of the light L1 emitted from the light emitting element to the substrate body 2 side can be absorbed by the light absorption layer 8 as shown in FIG. . For this reason, the reflected light on the main surface (mounting surface 21) of the substrate body 2 can be reduced over the entire region, and there is little variation in the direction of the light beam, and light with high directivity can be obtained.

The light absorption layer 8 can be obtained, for example, by baking a composition for a light absorption layer containing a glass powder having the following composition and a light absorption material.
The reflectance of the light absorption layer 8 is preferably 5% or less in the visible light region. When the reflectance of the light absorption layer 8 exceeds 5%, the effect of suppressing reflected light emitted in a direction other than directly above the light emitting element is small, and the directivity of the obtained light may not be sufficiently improved. The reflectance of the light absorption layer 8 is more preferably 3% or less.

As the glass powder for the light absorption layer 8, for example, it is expressed in mol% based on oxide, SiO ₂ is 58 to 84%, B ₂ O ₃ is 10 to 25%, Al ₂ O ₃ is 0 to 6%, At least one selected from Na ₂ O and K ₂ O is contained in a total of 1 to 5%, the total content of SiO ₂ and Al ₂ O ₃ is 65 to 84%, MgO is 0 to 10%, CaO, It is preferable to use a borosilicate glass containing 0 to 15% in total of at least one of SrO.

The glass transition point (Tg) of the borosilicate glass is preferably 550 to 630 ° C. When glass having a glass transition point (Tg) of less than 550 ° C. is used, degreasing becomes difficult, or the glass flows too much to maintain a predetermined area as the light absorption layer 8, so that element connection is possible. There is a possibility that glass flows and adheres on the terminal 4 or the mounting portion 22, thereby reducing the electrical connectivity of the element connection terminal 4 or the solderability of the mounting portion 22.
Moreover, when the glass whose glass transition point (Tg) exceeds 630 degreeC is used, there exists a possibility that shrinkage | contraction start temperature may become high and the dimensional accuracy of the light absorption layer 8 may fall.

  Further, the softening point (Ts) of the borosilicate glass is preferably 900 ° C. or less. When the glass softening point (Ts) exceeds 900 ° C., a firing temperature exceeding 900 ° C. is required to obtain a dense sintered body by firing this glass powder. For example, a silver paste is used. The formed wiring conductor may be deformed. By using a glass powder for forming the light absorption layer 8 having a softening point (Ts) of 900 ° C. or lower, there is no deformation of the wiring conductor mainly composed of silver, and these can be fired simultaneously.

  Next, each component of the borosilicate glass of the composition for light absorption layers is demonstrated. In the following description, unless otherwise specified, the composition is expressed in mol% on the basis of oxide, and is simply expressed as%.

SiO ₂ is a glass network former, and is a component that increases chemical durability, particularly acid resistance, and is an essential component. If it is less than 58%, the acid resistance may be insufficient. If it exceeds 84%, the glass softening point (Ts) tends to be high, or the glass transition point (Tg) tends to be too high.

B ₂ O ₃ is a glass network former and is an essential component. If it is less than 10%, the glass melting temperature tends to be high, and the glass may become unstable. Preferably it is 12% or more. If it exceeds 25%, not only is it difficult to obtain stable glass, but chemical durability may be reduced.

Al ₂ O ₃ is not an essential component, but may be contained in a range of 6% or less in order to enhance the stability or chemical durability of the glass. If it exceeds 6%, the transparency of the glass may decrease.

The total content of SiO ₂ and Al ₂ O ₃ is 65 to 84%. If it is less than 65%, chemical durability may be insufficient. If it exceeds 84%, the glass melting temperature becomes high, or the glass transition point (Tg) becomes too high.

Na ₂ O and K ₂ O are components that lower the glass transition point (Tg), and at least one of them is an essential component. It can contain up to 5% in total. If it exceeds 5%, chemical durability, particularly acid resistance, may deteriorate. Moreover, there exists a possibility that the electrical insulation of a sintered compact may fall. Na ₂ O, containing any one or more of _{K 2 O,} Na 2 O, the total content of _{K 2} O is at least 1% is preferred.

  MgO is not an essential component, but may be contained up to 10% in order to lower the glass transition point (Tg) or stabilize the glass. Preferably it is 8% or less.

  Neither CaO nor SrO is an essential component, but may be contained up to 15% in total in order to lower the glass softening point (Ts) or stabilize the glass. If it exceeds 15%, the acid resistance may decrease.

  The glass that is the main component of the light absorbing layer 8 preferably consists essentially of the above components, but may contain other components within a range not impairing the object of the present invention. When other components are contained, the total content of these components is preferably 10% or less. However, lead oxide is not contained.

  The glass powder used for the light absorption layer 8 can be obtained by producing glass having the glass composition as described above by a melting method and pulverizing by a dry pulverization method or a wet pulverization method. In the case of the wet pulverization method, it is preferable to use water as a solvent. For the pulverization, for example, a pulverizer such as a roll mill, a ball mill, or a jet mill can be used.

The 50% particle size (D ₅₀ ) of the glass powder used for the light absorption layer 8 is preferably 0.5 μm or more and 4 μm or less. When the 50% particle size of the glass powder is less than 0.5 μm, the glass powder tends to aggregate, making handling difficult, and the time required for pulverization may be too long. On the other hand, when the 50% particle size of the glass powder exceeds 4 μm, the glass softening temperature may increase or the sintering may be insufficient. The adjustment of the particle diameter can be performed by classification as necessary after pulverization, for example. In the present specification, the 50% particle size (D ₅₀ ) refers to a value measured using a laser diffraction / scattering particle size distribution analyzer.

  The maximum particle size of the glass powder is preferably 20 μm or less. When the maximum particle size exceeds 20 μm, the sinterability of the glass powder is lowered, and undissolved components remain in the sintered body, and the light absorption characteristics of the light absorption layer 8 may be uneven. The maximum particle size of the glass powder is more preferably 10 μm or less.

As the light absorbing material, a black pigment capable of coloring the glass powder sintered body to black can be used. Examples of the black pigment include metal oxide pigments or composite metal oxide pigments containing at least one metal selected from Cr, Co, Ni, Fe, Mn, and Cu, carbon pigments such as carbon black and graphite, and various organic pigments. Examples thereof include mixed organic pigments made black by mixing pigments, and titanium-based black pigments represented by TiO _x or TiO _x N _y . Specific examples of the composite metal oxide pigment include, for example, Co—Fe—Cr black pigment, Cu—Cr—Mn black pigment, Mn—Bi black pigment, Mn—Y black pigment, Fe—Cr. Black pigments, Cr—Cu pigments, and Mn—Fe pigments can be used, and these can be used alone or in combination of two or more. Among these, Cu-Cr-Mn black pigments, Cr-Cu pigments, and Mn-Fe pigments have high blackness, and the light absorption layer 8 has excellent light absorption characteristics for light in the visible light range. Since it is obtained, it is preferable. Here, the blackness is “blackness” and indicates the degree of black.

The 50% particle size (D ₅₀ ) of the light absorbing material is preferably 2 μm or more and 10 μm or less.
If the light-absorbing material has a 50% particle size (D ₅₀ ) of less than 2 μm, the light-absorbing material is difficult to uniformly disperse in the film, so that the light-absorbing layer 8 has a sufficient light-absorbing characteristic for incident light. The ratio of incident light that reaches the surface of the substrate body 2 is not increased, and the reflected light on the surface of the substrate body 2 may not be sufficiently reduced. Moreover, when it is set as a paste body, thixotropy tends to rise and there exists a possibility that a handleability may fall. In addition, the applicability in screen printing is hindered. On the other hand, if the 50% particle size (D ₅₀ ) of the light absorbing material exceeds 10 μm, it becomes difficult to contain the light absorbing material densely in the light absorbing layer 8 when the paste body is thinned. 8, it becomes difficult to obtain uniform light absorption characteristics. By setting the 50% particle size (D ₅₀ ) of the light absorbing material to 2 μm or more and 4 μm or less, the light absorbing layer 8 can obtain excellent light absorption characteristics with respect to the incident light, and the reflected light on the surface of the substrate body 2 can be obtained. It can be reduced sufficiently.

The light absorption layer glass powder and the light absorption material are blended and mixed so that the content of the light absorption material with respect to the light absorption layer 8 is, for example, 1% by mass or more and 15% by mass or less. A layer composition can be obtained.
When the content of the light absorbing material is less than 1% by mass, the light absorbing layer 8 cannot obtain sufficient light absorption characteristics with respect to incident light from the light emitting element, and the amount of light reaching the surface of the substrate body 2 increases. The reflected light on the surface of the substrate body 2 may not be sufficiently reduced. On the other hand, when the content of the light absorbing material exceeds 15% by mass, the strength of the light absorbing layer 8 is lowered, the damage due to the external pressure is likely to occur, and the baking property may be lowered. By making the content of the light absorbing material with respect to the light absorbing layer 8 3% by mass or more and 10% by mass or less, it is possible to sufficiently reduce the reflected light on the surface of the substrate body 2 while maintaining the strength of the light absorbing layer 8. It is possible to obtain light having high directivity with little variation in the light beam direction. The content of the light absorbing material is preferably 4% by mass or more.

  The light absorption layer 8 can be formed by adding, for example, a binder to the above-described composition for a light absorption layer to form a paste, screen-printing this on the substrate body 2 and baking.

Although the thickness of the light absorption layer 8 is not specifically limited, 10-50 micrometers is preferable.
When the thickness of the light absorption layer 8 is less than 10 μm, the distance from the upper surface of the light absorption layer 8 to the surface of the substrate body 2 is too short, and the amount of the light absorption material contained in the light absorption layer 8 is in the thickness direction. In this case, the light incident on the light absorption layer 8 may not be efficiently absorbed. On the other hand, if the thickness of the light absorption layer 8 exceeds 50 μm, the volume of the light absorption layer 8 itself becomes excessively large, the balance of firing shrinkage is lost, and the warpage of the substrate increases, or mounting due to softening flow during firing. There is a possibility that the constituent material of the light absorption layer 8 may enter the portion 22. The thickness of the light absorption layer 8 is more preferably 15 μm or more and 30 μm or less.

  The reflectance of the light absorption layer 8 with respect to visible light is preferably 5% or less.

  The embodiment of the LED substrate that is the light emitting element mounting substrate of the present invention has been described above by way of example, but the light emitting element mounting substrate of the present invention is not limited thereto. As long as it does not contradict the spirit of the present invention, the configuration can be changed as necessary.

For example, the light emitting device shown in FIG. 6 can be manufactured by mounting the light emitting element 9 on the mounting portion 22 using the LED substrate 1 of the present invention.
The light-emitting device 10 shown in FIG. 6 has a light-emitting element 9 such as an LED mounted on the mounting portion 22 of the LED substrate 1. The light emitting element 9 is fixed to the mounting portion 22 using an adhesive, and an electrode (not shown) is electrically connected to the element connection terminal 4 by a bonding wire 11. And the sealing layer 12 by a molding material is provided so that the light emitting element 9 and the bonding wire 11 may be covered, and the light-emitting device 10 is comprised.

  According to the light emitting device 10 using the LED substrate 1 of the present invention, since the light absorption layer 8 is provided in the region surrounding the mounting portion 22 of the substrate body 2, among the light emitted from the light emitting element 9, Light absorption on the main surface of the substrate body 2 can be suppressed by absorbing the light L1 emitted toward the substrate body 2 side by the light absorption layer 8. For this reason, light emitted in an extra direction other than the front direction of the light emitting element 9 can be reduced, light with little variation in the direction of light, and light with high directivity with a reduced aperture can be obtained. Such a light emitting device 10 can be suitably used as, for example, a low beam headlight of an automobile, a projector or other light source.

  As mentioned above, although the board | substrate for LED 1 of this invention and embodiment of the light-emitting device 10 using the same were described taking the example shown by FIGS. 1-6, the board | substrate for LED and light-emitting device of this invention are limited to these. Is not to be done. As long as it does not contradict the spirit of the present invention, the configuration can be changed as necessary.

  The LED substrate 1 of the present invention can be manufactured, for example, as follows. In the following description, the members used for the manufacture will be described with the same reference numerals as those of the finished product.

  The LED substrate 1 is made of a plurality of plate-like green sheets (for example, two sheets of an upper layer green sheet 2a and a lower layer green sheet 2b) for forming the substrate body 2, and a frame body. Can be obtained by superposing these to form an unfired LED substrate 1 and degreasing and firing.

  Specifically, the unfired LED substrate 1 is, for example, as shown in FIG. 7, unfired connection vias 6 (not shown in FIG. 7) so as to penetrate both main surfaces of the upper layer green sheet 2 a, The unfired thermal via 7 is formed, the unfired element connection terminals 4 (not shown in FIG. 7) are formed on the mounting surface 21, and the lower green sheet 2b is not penetrated through both main surfaces. After forming the firing connection via 6 (not shown in FIG. 7) and forming the unfired external electrode 5 on the non-mounting surface 23, the upper layer green sheet 2a is laminated on the lower layer green sheet 2b, and the upper layer The frame green sheet 3 (not shown in FIG. 7) can be laminated on the upper surface of the green sheet 2a.

(1) Production of Green Sheet The green sheet 2 for the main body is a slurry obtained by adding a binder, and if necessary, a plasticizer and a solvent to a glass ceramic composition containing glass powder (glass powder for the substrate main body) and a ceramic filler. Can be manufactured by forming it into a sheet by the doctor blade method or the like and drying it. The frame green sheet 3 is produced by hollowing out a portion that becomes a cavity from a plurality of green sheets having the same size as the main body green sheet 2.

  As a glass powder for main bodies for producing the green sheet for main bodies, a glass transition point (Tg) is preferably 550 ° C. or higher and 700 ° C. or lower. When the glass transition point (Tg) is less than 550 ° C., degreasing may be difficult, and when it exceeds 700 ° C., the shrinkage start temperature increases, and the dimensional accuracy may decrease.

  Further, the glass powder for main body is preferably one in which crystals are precipitated when fired at 800 ° C. or higher and 930 ° C. or lower. In the case where crystals do not precipitate, there is a possibility that sufficient mechanical strength cannot be obtained. Furthermore, the crystallization peak temperature (Tc) measured by DTA (differential thermal analysis) is preferably 880 ° C. or less. When Tc exceeds 880 ° C., the dimensional accuracy may be reduced.

As such a glass powder for a main body, it is 57 to 65% of SiO ₂ , 13 to 18% of B ₂ O ₃ , 9 to 23% of CaO, and 3 of Al ₂ O ₃ in terms of mol% based on oxide. 8%, those containing from 0.5 to 6% of at least one of them in total selected from _{K 2} O and Na ₂ O are preferred. By using such a composition, the surface flatness of the substrate body 2 can be easily improved.

Here, SiO ₂ becomes a glass network former. When the content of SiO ₂ is less than 57%, it is difficult to obtain a stable glass and the chemical durability may be lowered. On the other hand, when the content of SiO ₂ exceeds 65%, the glass melting temperature and the glass transition point (Tg) may be excessively high. The content of SiO ₂ is preferably 58% or more, more preferably 59% or more, and particularly preferably 60% or more. Further, the content of SiO ₂ is preferably 64% or less, more preferably 63% or less.

B ₂ O ₃ is a glass network former. When the content of B ₂ O ₃ is less than 13%, the glass melting temperature and the glass transition point (Tg) may be excessively high. On the other hand, when the content of B ₂ O ₃ exceeds 18%, it is difficult to obtain a stable glass, and the chemical durability may be lowered. The content of B ₂ O ₃ is preferably 14% or more, more preferably 15% or more. Further, the content of B ₂ O ₃ is preferably 17% or less, more preferably 16% or less.

Al ₂ O ₃ is added to increase the stability, chemical durability, and strength of the glass. If the content of Al ₂ O ₃ is less than 3%, the glass may become unstable. On the other hand, when the content of Al ₂ O ₃ exceeds 8%, the glass melting temperature and the glass transition point (Tg) may be excessively high. The content of Al ₂ O ₃ is preferably 4% or more, more preferably 5% or more. Further, the content of Al ₂ O ₃ is preferably 7% or less, more preferably 6% or less.

  CaO is added to increase glass stability and crystal precipitation, and to lower the glass melting temperature and the glass transition point (Tg). When the content of CaO is less than 9%, the glass melting temperature may be excessively high. On the other hand, when the content of CaO exceeds 23%, the glass may become unstable. The content of CaO is preferably 12% or more, more preferably 13% or more, and particularly preferably 14% or more. Further, the content of CaO is preferably 22% or less, more preferably 21% or less, and particularly preferably 20% or less.

K ₂ O and Na ₂ O are added to lower the glass transition point (Tg). When the total content of K ₂ O and Na ₂ O is less than 0.5%, the glass melting temperature and the glass transition point (Tg) may be excessively high. On the other hand, when the total content of K ₂ O and Na ₂ O exceeds 6%, chemical durability, particularly acid resistance may be lowered, and electrical insulation may be lowered. The total content of K ₂ O and Na ₂ O is preferably 0.8% or more and 5% or less.

  In addition, the glass powder for main bodies is not necessarily limited to what consists only of the said component, Other components can be contained in the range with which various characteristics, such as a glass transition point (Tg), are satisfy | filled. When other components are contained, the total content is preferably 10% or less.

  The glass powder for the main body is obtained by manufacturing glass having the above composition by a melting method and pulverizing it by a dry pulverization method or a wet pulverization method. In the case of the wet pulverization method, it is preferable to use water or ethyl alcohol as a solvent. Examples of the pulverizer include a roll mill, a ball mill, and a jet mill.

The 50% particle size (D ₅₀ ) of the glass powder for main body is preferably 0.5 μm or more and 2 μm or less. If D ₅₀ of the glass powder is less than 0.5 [mu] m, handling the glass powder is likely to agglomerate are not only difficult, uniform dispersion becomes difficult. On the other hand, if the D ₅₀ of the glass powder exceeds 2μm, there is a possibility that increase and insufficient sintering of the glass softening temperature (Ts) is generated. The particle diameter may be adjusted by classification as necessary after pulverization, for example.

  As the ceramic powder for the main body for producing the green sheet for the main body, those conventionally used for manufacturing LTCC substrates can be used. For example, alumina powder, zirconia powder and the like can be preferably used. A mixture of alumina powder and ceramic powder having a higher refractive index than alumina can also be used.

Examples of the ceramic powder having a refractive index higher than that of alumina include titania powder, zirconia powder, and stabilized zirconia powder. While the refractive index of alumina is about 1.8, the refractive index of titania is about 2.7 and the refractive index of zirconia is about 2.2, which is higher than that of alumina. . The D ₅₀ of these ceramic powders is preferably 0.5 μm or more and 4 μm or less.

  The main body glass powder and the main body ceramic powder are blended in, for example, 30% by mass to 50% by mass of the main body glass powder, and 50% by mass to 70% by mass of the main body ceramic powder. A glass ceramic composition for use is obtained. In addition, a slurry can be obtained by adding a binder and, if necessary, a plasticizer, a dispersant, a solvent, and the like to the glass ceramic composition for main body.

  As the binder resin, for example, polyvinyl butyral, acrylic resin and the like can be suitably used. As the plasticizer, for example, dibutyl phthalate, dioctyl phthalate, butyl benzyl phthalate, di-2-ethylhexyl phthalate and the like can be used. As the solvent, organic solvents such as toluene, xylene, 2-propanol and 2-butanol can be suitably used.

  The slurry is formed into a sheet by a doctor blade method or the like and dried, whereby the upper layer green sheet 2a, the lower layer green sheet 2b, and the frame green sheet 3 can be manufactured.

(2) Formation of wiring conductor paste layer and heat dissipating metal paste layer A through-hole for forming a connection via is usually formed in a predetermined cross-sectional shape and size at a predetermined position of the upper layer green sheet 2a and the lower layer green sheet 2b. It forms by the method of. In addition, through holes for forming thermal vias are formed at a position corresponding to the mounting portion 21 of the upper layer green sheet 2a by a normal method with a predetermined cross-sectional shape and size.

Next, the connection via conductor paste layer 6 is formed in the through-holes for forming the connection vias of the upper layer green sheet 2a and the lower layer green sheet 2b, respectively, and one surface to be the mounting surface 21 of the upper layer green sheet 2a The three pairs of element connection terminal conductor paste layers 4 are formed in a predetermined size and shape so as to be connected to the connection via conductor paste layers 6, respectively. Further, the inner layer wiring layer conductor paste layer 13 (not shown in FIG. 7) is formed at a predetermined position on the main surface of the upper layer green sheet 2a facing the element connection terminal conductor paste layer 4 formation surface.
Also, a pair of external electrode conductor paste layers 5 are connected to one surface of the lower layer green sheet 2b which is the non-mounting surface 23, and each connection via conductor paste layer 6 is connected to the external electrode conductor paste layer 5. Thus, it forms with a predetermined | prescribed magnitude | size and shape.
The element connection terminal conductor paste layer 4, the connection via conductor paste layer 6, the external electrode conductor paste layer 5, and the inner wiring layer conductor paste layer 13 are collectively referred to as a wiring conductor paste layer.

  As the wiring conductor paste constituting these wiring conductor paste layers, for example, a conductive metal powder containing at least one of copper, silver, gold and the like as a main component, a vehicle such as ethyl cellulose, and a solvent as necessary are added. The paste is used. The conductive metal powder is preferably a metal powder made of silver or a metal powder made of silver and platinum or palladium.

  In order to form the wiring conductor paste layer, for example, the conductor paste is applied and filled by screen printing. The thickness of the formed wiring conductor paste layer is adjusted so that the finally obtained element connection terminals 4 and external electrodes 5 have a predetermined film thickness.

Further, the thermal via paste layer 7 is formed in the through hole for forming the thermal via in the upper layer green sheet 2a.
In order to form the thermal via paste layer 7, the heat dissipating metal paste can be prepared in the same manner as the wiring conductor paste using metal powder as a heat dissipating material. Examples of the metal powder that is a heat dissipating material include silver, a silver palladium mixture, and a silver platinum mixture.
Thus, when using silver, a silver palladium mixture, a silver platinum mixture, etc. preferable for the wiring conductor paste as the heat-dissipating metal powder, one kind of paste is used for the element connection terminal conductor paste layer 4 and the external electrode. The conductor paste layer 5, the connection via conductor paste layer 6, and the thermal via paste layer 7 can all be formed. In order to form the thermal via paste layer 7, for example, a heat radiating metal paste is applied and filled by screen printing.

(3) Formation of light absorption layer In the upper layer green sheet 2a on which the wiring conductor paste layer is formed, the mounting portion 22 on one main surface to be the mounting surface 21, and the three pairs formed in the step (2) The light absorbing layer glass paste layer 8 is formed in a region excluding the element connection terminal conductor paste layer 4 so as not to overlap the position where the frame green sheet 3 is laminated.

  A glass paste for a light absorbing layer is a composition for a light absorbing layer formed by mixing the glass powder for the light absorbing layer 8 and a light absorbing material, and a vehicle such as ethyl cellulose, and a solvent as required are added. The paste is used.

  In order to form the glass paste layer 8 for light absorption layers, it apply | coats by screen printing, for example.

(4) Lamination of green sheet The wiring conductor paste obtained in the steps (2) and (3) on the lower layer green sheet 2b with the wiring conductor paste layer obtained in the step (2). And the upper green sheet 2a with the thermal via paste layer and the light absorbing layer glass paste layer, and the frame obtained in the step (1) above the mounting surface 21 of the upper green sheet 2a. The green sheet 3 is laminated. Thus, a green sheet laminate having a cavity on the mounting surface 21 and a bottom surface of the cavity having the mounting portion 22 is obtained as the unfired LED substrate 1.

(5) Firing For firing the unfired LED substrate 1 obtained in the step (4), after degreasing to remove a binder or the like, if necessary, for sintering a glass ceramic composition or the like. Firing is performed.

  Degreasing is performed, for example, under the condition of holding at a temperature of 500 ° C. to 600 ° C. for 1 hour to 10 hours. When the degreasing temperature is less than 500 ° C. or the degreasing time is less than 1 hour, the binder or the like may not be sufficiently removed. On the other hand, if the degreasing temperature is about 600 ° C. and the degreasing time is about 10 hours, the binder and the like can be sufficiently removed, and if it exceeds this, productivity and the like may be lowered.

  In addition, the firing can be performed by appropriately adjusting the time in a temperature range of 800 ° C. to 930 ° C. in consideration of obtaining a dense structure of the substrate body 2 and the frame body 3 and productivity. Specifically, it is preferable to hold at a temperature of 850 ° C. or higher and 900 ° C. or lower for 20 minutes or longer and 60 minutes or shorter, particularly preferably at a temperature of 860 ° C. or higher and 880 ° C. or lower. If the firing temperature is less than 800 ° C., the substrate body may not be obtained as a dense structure. On the other hand, if the firing temperature exceeds 930 ° C., the productivity may be lowered due to deformation of the substrate body 2. In addition, when a metal paste containing a metal powder containing silver as a main component is used as the wiring conductor paste or the heat dissipating metal paste, when the firing temperature exceeds 880 ° C., a predetermined shape is required to soften excessively. May not be able to maintain.

  In this way, the unfired LED substrate 1 is fired to obtain the LED substrate 1. After firing, the element connection terminal 4 is used for protecting a conductor on a normal element substrate such as a gold plating layer and the external electrode 5 a nickel plating layer so as to cover the surfaces of the element connection terminal 4 and the external electrode 5. A conductive protective layer can be formed.

  Although the method for manufacturing the LED substrate 1 has been described above, the upper layer green sheet 2a, the lower layer green sheet 2b, and the frame green sheet 3 do not necessarily have to be formed of a single green sheet, and a plurality of green sheets are provided. May be laminated. Further, the order of forming each part can be changed as appropriate as long as the LED substrate 1 can be manufactured.

  Examples of the present invention will be described below. The present invention is not limited to these examples.

[Example 1]
The LED substrate 1 shown in FIG. 1 was manufactured by the method shown below. First, main body green sheets (upper layer green sheet and lower layer green sheet) for manufacturing the substrate body 2 of the LED substrate 1 were prepared. In the production of the green sheet for the main body, in terms of mol% based on oxide, SiO ₂ is 60.4%, B ₂ O ₃ is 15.6%, Al ₂ O ₃ is 6%, CaO is 15%, K _{2 O} 1%, blending the Na 2 _O 2% of the raw materials, mixing, after the raw material mixture was melted for 60 minutes at placed in 1600 ° C. in a platinum crucible and glass was cast and cooled in a molten state. This glass was pulverized with an alumina ball mill for 40 hours to produce a glass powder for a main body. In addition, ethyl alcohol was used as a solvent for pulverization.

  Next, 38% by mass of this glass powder, 38% by mass of alumina powder (manufactured by Showa Denko KK, trade name: AL-45H), zirconia filler (manufactured by Daiichi Rare Element Chemical Industries, trade name: HSY-3F-J) ) Was mixed at 24% by mass and mixed to produce a glass ceramic composition for the main body. 50 g of this glass ceramic composition, 15 g of an organic solvent (toluene, xylene, 2-propanol, 2-butanol mixed at a mass ratio of 4: 2: 2: 1), plasticizer (di-2-ethylhexyl phthalate) 2.5 g of polyvinyl butyral (trade name: PVK # 3000K, manufactured by Denka) as a binder and 5 g of a dispersant (trade name: BYK180, manufactured by Big Chemie) were further blended and mixed to prepare a slurry.

  This slurry was applied onto a PET film by a doctor blade method, and dried green sheets were laminated so that the thickness after firing was 0.5 mm, and green sheets for main bodies (green sheets for upper layers and green sheets for lower layers) ) Was manufactured. Further, green sheets manufactured in the same manner as these green sheets for main bodies were processed into a predetermined shape to produce green sheets for frames.

  On the other hand, conductive metal powder (manufactured by Daiken Chemical Industry Co., Ltd., trade name: S550) and ethyl cellulose as a vehicle are blended in a mass ratio of 85:15, and the solid content is 85 mass% after being dispersed in α-terpineol as a solvent. Then, the mixture was kneaded for 1 hour in a porcelain mortar, and further dispersed three times with three rolls to produce a conductor paste.

  The conductor paste is screen-printed on the upper surface of the upper layer green sheet to form an element connection terminal conductor paste layer, and a diameter corresponding to the connection via and the thermal via is 0.15 mm and A through hole having a diameter of 1 mm was formed, and the conductive paste was filled by a screen printing method to form a connection via conductor paste layer and a thermal via conductor paste layer.

  Further, the conductor paste is screen-printed on the upper surface of the lower layer green sheet to form a conductor paste layer for the inner wiring layer, and a through hole having a diameter of 0.15 mm is formed using a hole puncher in a portion corresponding to the connection via. Each hole was formed and filled with the conductive paste by a screen printing method to form a conductive paste layer for connection via. Further, the conductor paste was screen-printed on the lower surface of the lower body green sheet to form a conductor paste layer for external electrodes.

Next, the glass paste for light absorption layers was prepared as follows.
That is, first, raw materials of 81.6% of SiO ₂ , 16.6% of B ₂ O _{3 and} 1.8% of K ₂ O are blended and mixed in terms of mol% based on oxide, and this raw material mixture is mixed. After putting in a platinum crucible and melting at 1600 ° C. for 60 minutes, molten glass was poured out and cooled. This glass was pulverized with an alumina ball mill for 20 hours to produce a glass powder for a light absorption layer. In addition, ethyl alcohol was used as a solvent for pulverization.

The 50% particle size (D ₅₀ ) of the obtained glass powder for light absorption layer was measured using a laser diffraction / scattering type particle size distribution analyzer (manufactured by Shimadzu Corporation, trade name: SALD2100). Met.

Next, the light absorbing layer glass powder and the black pigment (trade name: BLACK3702 manufactured by Asahi Sangyo Co., Ltd.) are blended at a ratio of 95% by weight of the glass powder for the light absorbing layer and 5% by weight of the black pigment. The composition for light absorption layers was manufactured by mixing.
The composition for light absorption layer and the resin component are blended at a ratio of 80% by mass of the composition for light absorption layer and 20% by mass of the resin component, kneaded in a porcelain mortar for 1 hour, and further three Dispersion was performed three times with a roll to prepare a light absorbing layer glass paste. As the resin component, ethyl cellulose and α-terpineol were prepared and dispersed at a mass ratio of 85:15.

  Then, the light prepared as described above so as not to overlap the area of the upper surface of the green sheet for upper layer 2a excluding the mounting portion 22 and the element connection terminal conductor paste layer and the position where the green sheet for frame is laminated. The glass paste for absorption layer was screen-printed so that the thickness after baking became 20 micrometers, and the glass paste layer for light absorption layers was formed.

  Next, the green sheet for the lower layer with the conductor paste layer thus produced is overlaid with the glass sheet for the light absorbing layer and the upper layer green sheet with the conductor paste layer, and the frame body is placed on the upper layer of the green sheet. After the green sheets for use were stacked, they were integrated by thermocompression bonding. Thus, an unfired LED substrate was obtained.

  The obtained unfired LED substrate is degreased by holding at 550 ° C. for 5 hours, and further held and fired at 870 ° C. for 30 minutes, followed by electrolytic plating to mount part 22, element connection terminal 4, external electrode 5. A 10 μm nickel film and a 0.3 μm gold film were formed on the respective surfaces of the LED substrate 1 to manufacture an LED substrate 1.

  Next, a 2-wire type LED (manufactured by Epistar, trade name: ES-CEBLV45) is gold-tin eutectic solder (manufactured by Mitsubishi Materials Corporation, trade name: The pair of electrodes included in the LED were electrically connected to the element connection terminals 4 by bonding wires 11. Furthermore, the sealing layer 12 is formed using a silicone sealing material (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: SCR-1016A) and a wavelength conversion phosphor (manufactured by Mitsubishi Chemical, trade name P46-Y3) as a molding material. A light emitting device was obtained.

[Comparative Example 1]
A copper foil having a thickness of 35 μm is used at the same position as shown in FIG. 1 by using a so-called DBC (direct bond copper) method on one main surface of the aluminum nitride substrate. The LED substrate 1 was manufactured by forming external electrodes at the same positions as shown in FIG. 1 on the other main surface in the same manner as the element connection terminals. . Then, using this LED substrate 1, a light emitting device was prepared by mounting a light emitting element in the same manner as in Example 1.

[Comparative Example 2]
An LED substrate 1 was produced in the same manner as in Example 1 except that the light absorbing layer glass paste layer was not formed on the upper surface of the upper layer green sheet. Then, using this LED substrate 1, a light emitting device was prepared by mounting a light emitting element in the same manner as in Example 1.

[Light distribution evaluation]
The light distribution curves of the light emitting devices of Example 1 and Comparative Examples 1 and 2 are shown in FIGS. 8 is a diagram showing a light distribution curve of the light emitting device of Example 1, FIG. 9 is a diagram showing a light distribution curve of the light emitting device of Comparative Example 1, and FIG. 10 is a light emitting device of Comparative Example 2. It is a figure which shows no light distribution curve.
The light distribution curves shown in FIGS. 8 to 10 have a radius of 0.1 [m] centered on the optical center C, with the front direction (directly above) T from the optical center C being 180 °, as shown in FIG. The illuminance [cd] at the position is measured over 90 ° on both sides, and the relative value when the luminous intensity of the immediately above T (180 °) is 100 is shown as a graph. Here, the optical center C refers to the point that can be regarded as the center of the light emitting portion in the light emitting device. In this embodiment, the central portion of the light emitting element disposed in the center among the three light emitting elements mounted on the mounting portion 22. Say.

As is clear from FIG. 8, in the light emitting device of Example 1 using the LED substrate provided with the light absorption layer, when the top T of the light emitting element is 180 °, the light emitting device is 90 to 140 ° and 220 to 270 °. In the range, the illuminance is suppressed, while in the range of 140 to 220 ° including T immediately above the light emitting element, high illuminance is obtained, and there is little variation in the light beam direction, and light with high directivity can be obtained. Was recognized.
On the other hand, in the light-emitting device of Comparative Example 1 using an aluminum nitride substrate that does not have a light absorption layer as the LED substrate, as shown in FIG. 9, 125 to 140 ° when T directly above the light-emitting element is 180 °. In the light emitting device of Comparative Example 2 using a glass ceramic substrate (LTCC substrate) having no light absorption layer as the LED substrate, the illuminance is high in the range of 220 to 235 °. As shown, when the top T of the light emitting element is 180 degrees, the illuminance is high in a wide range of 100 to 140 ° and 220 to 260 °, and in any light emitting device, the variation in the light beam direction is large, It was recognized that the directivity of the light obtained was low.

  According to the light emitting device using the LED substrate of the present invention, since the light absorption layer is provided in the region surrounding the light emitting element mounting portion in the substrate main body, the reflected light on the main surface of the substrate main body is suppressed. In addition, there is little variation in the direction of light rays, and high directivity directly above the light source, that is, high directivity in the front direction, and high brightness can be obtained. Such a light emitting device can be suitably used as, for example, a low beam headlight, a projector, floodlighting and other light sources for automobiles.

DESCRIPTION OF SYMBOLS 1 ... LED board (light emitting element mounting board | substrate), 2 ... Board | substrate body, 2a ... Upper layer green sheet, 2b ... Lower layer green sheet, 21 ... Mounting surface, 22 ... Mounting part, 23 ... Non-mounting surface, 3 ... Frame: 4 ... Element connection terminal, 5 ... External electrode, 6 ... Connection via, 6a ... Upper connection via, 6b ... Lower connection via, 7 ... Thermal via, 8 ... Light absorption layer, 9 ... Light emitting element, 10: Light emission Device: 11 ... bonding wire, 12 ... sealing layer, 13 ... inner wiring layer

Claims (7)

  A sintered body of a glass ceramic composition containing glass powder and a ceramic filler, formed on a substrate body having a light emitting element mounting portion, and a region surrounding the light emitting element mounting portion of the substrate body, from the light emitting element A light-absorbing layer that absorbs emitted light, and the light-absorbing layer is made of a glass powder sintered body containing a light-absorbing material.   The light emitting element mounting substrate according to claim 1, wherein the light absorption layer is a black body.   The light-emitting element mounting according to claim 1, wherein the light absorbing material contains at least one selected from the group consisting of a Cu—Cr—Mn oxide, a Cr—Cu oxide, and a Mn—Fe oxide. Substrate.   The light emitting element mounting substrate according to any one of claims 1 to 3, wherein the light emitting element mounting substrate is formed by simultaneously firing the light absorption layer and the substrate body.   The light emitting element mounting substrate according to any one of claims 1 to 4, wherein the light emitting element mounting substrate has a thermal via embedded in the substrate body.   The light emitting element mounting substrate according to any one of claims 1 to 5, wherein a reflectance of the light absorption layer is 5% or less.   A light emitting device comprising: the light emitting element mounting substrate according to claim 1; and a light emitting element mounted on a mounting portion of the light emitting element mounting substrate.

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