JP2013179404A5 - - Google Patents
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- Publication number
- JP2013179404A5 JP2013179404A5 JP2012041226A JP2012041226A JP2013179404A5 JP 2013179404 A5 JP2013179404 A5 JP 2013179404A5 JP 2012041226 A JP2012041226 A JP 2012041226A JP 2012041226 A JP2012041226 A JP 2012041226A JP 2013179404 A5 JP2013179404 A5 JP 2013179404A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- protective film
- diaphragm
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 230000001681 protective Effects 0.000 claims 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 5
- 239000012071 phase Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000007791 liquid phase Substances 0.000 claims 1
- 230000000149 penetrating Effects 0.000 claims 1
Claims (4)
前記基板上に形成された第1絶縁膜と、
前記第1絶縁膜の一部に形成された凹部と、
前記凹部の側面および底部に形成された第1保護膜と、
前記凹部を覆い前記第1絶縁膜上に形成された第2保護膜と、
前記第2保護膜上に形成された振動板と、
前記凹部の上方の前記振動板に形成された第1電極と、
前記第1電極を覆って形成された圧電体層と、
前記圧電体層上に形成された第2電極と、
前記振動板と前記第2保護膜を前記凹部まで貫通された孔部と、
を備え、
前記基板の板厚方向の平面視において、前記孔部は前記第2電極の外縁と前記凹部の外縁との間に配置された
ことを特徴とする超音波アレイセンサー。 A substrate ,
A first insulating film formed before SL on the substrate,
A recess formed in a part of the first insulating film;
A first protective film formed on the side and bottom of the recess;
A second protective film covering the recess and formed on the first insulating film;
A diaphragm formed on the second protective film;
A first electrode formed on the diaphragm above the recess;
A piezoelectric layer formed to cover the first electrode;
A second electrode formed on the piezoelectric layer;
A hole penetrating the diaphragm and the second protective film to the recess ;
With
Ultrasonic array sensor in a plan view of the plate thickness direction of the substrate, before Kiana unit, characterized in that disposed between the outer periphery of the outer edge of the second electrode recess.
前記孔部は複数設けられ、前記凹部の中心から同じ距離であり、かつ前記凹部の中心から点対称の位置に配置されている
ことを特徴とする請求項1に記載の超音波アレイセンサー。 In plan view in the thickness direction of the substrate,
2. The ultrasonic array sensor according to claim 1, wherein a plurality of the hole portions are provided, are arranged at the same distance from the center of the concave portion, and are point-symmetrical from the center of the concave portion.
前記第1絶縁膜の一部を除去し、前記第1絶縁膜に複数の凹部を形成する工程と、
複数の前記凹部に気相弗酸でエッチングされない第1保護膜を形成する工程と、
複数の前記凹部を第1絶縁膜で埋める工程と、
前記第1絶縁膜上及び前記第1絶縁膜上に気相弗酸でエッチングされない第2保護膜を形成する工程と、
前記第2保護膜上に振動板を形成する工程と、
前記振動板上に複数の圧電体層を形成する工程と、
前記第2保護膜及び前記振動板の一部を除去し、前記第2絶縁膜を露出させる孔を形成する工程と、
気相弗酸または液相により前記第2絶縁膜を除去する工程と、
を含むことを特徴とする超音波アレイセンサーの製造方法。 Forming a first insulating film on the substrate;
Removing a part of the first insulating film and forming a plurality of recesses in the first insulating film;
Forming a first protective film that is not etched with vapor-phase hydrofluoric acid in the plurality of recesses;
Filling the plurality of recesses with a first insulating film;
Forming a second protective film that is not etched with vapor hydrofluoric acid on the first insulating film and on the first insulating film;
Forming a diaphragm on the second protective film;
Forming a plurality of piezoelectric layers on the diaphragm;
Removing a part of the second protective film and the diaphragm, and forming a hole exposing the second insulating film;
Removing the second insulating film by vapor phase hydrofluoric acid or liquid phase;
A method for producing an ultrasonic array sensor, comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012041226A JP5982868B2 (en) | 2012-02-28 | 2012-02-28 | Ultrasonic sensor, ultrasonic array sensor, and method of manufacturing ultrasonic sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012041226A JP5982868B2 (en) | 2012-02-28 | 2012-02-28 | Ultrasonic sensor, ultrasonic array sensor, and method of manufacturing ultrasonic sensor |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013179404A JP2013179404A (en) | 2013-09-09 |
JP2013179404A5 true JP2013179404A5 (en) | 2015-04-09 |
JP5982868B2 JP5982868B2 (en) | 2016-08-31 |
Family
ID=49270688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012041226A Active JP5982868B2 (en) | 2012-02-28 | 2012-02-28 | Ultrasonic sensor, ultrasonic array sensor, and method of manufacturing ultrasonic sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5982868B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6476633B2 (en) * | 2014-07-31 | 2019-03-06 | セイコーエプソン株式会社 | Piezoelectric device |
JP6849483B2 (en) | 2017-03-03 | 2021-03-24 | キヤノンメディカルシステムズ株式会社 | Ultrasonic transducer and ultrasonic probe |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005051690A (en) * | 2003-07-31 | 2005-02-24 | Matsushita Electric Works Ltd | Ultrasonic array sensor and method of manufacturing the same |
JP4688070B2 (en) * | 2006-03-31 | 2011-05-25 | 宇部興産株式会社 | Piezoelectric thin film resonator, piezoelectric thin film device, and manufacturing method thereof |
JP4986216B2 (en) * | 2006-09-22 | 2012-07-25 | 富士フイルム株式会社 | Method for manufacturing liquid discharge head and image forming apparatus |
JP4895323B2 (en) * | 2006-10-27 | 2012-03-14 | 宇部興産株式会社 | Thin film piezoelectric resonator |
JP5671876B2 (en) * | 2009-11-16 | 2015-02-18 | セイコーエプソン株式会社 | Ultrasonic transducer, ultrasonic sensor, method for manufacturing ultrasonic transducer, and method for manufacturing ultrasonic sensor |
-
2012
- 2012-02-28 JP JP2012041226A patent/JP5982868B2/en active Active
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