JP2013175528A - Light emitting device and manufacturing method of the same - Google Patents

Light emitting device and manufacturing method of the same Download PDF

Info

Publication number
JP2013175528A
JP2013175528A JP2012038161A JP2012038161A JP2013175528A JP 2013175528 A JP2013175528 A JP 2013175528A JP 2012038161 A JP2012038161 A JP 2012038161A JP 2012038161 A JP2012038161 A JP 2012038161A JP 2013175528 A JP2013175528 A JP 2013175528A
Authority
JP
Japan
Prior art keywords
light emitting
substrate
emitting device
adhesive
peripheral wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012038161A
Other languages
Japanese (ja)
Inventor
Tsutomu Okubo
努 大久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP2012038161A priority Critical patent/JP2013175528A/en
Publication of JP2013175528A publication Critical patent/JP2013175528A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75264—Means for applying energy, e.g. heating means by induction heating, i.e. coils
    • H01L2224/75265—Means for applying energy, e.g. heating means by induction heating, i.e. coils in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device which enables a process where high temperature is generated for joining a light emitting element to a substrate to be used while using an inexpensive resin substrate in the manufacturing and makes the degradation and the deterioration of the luminous efficiency less likely to be caused by the usage.SOLUTION: A light emitting device which includes: a silicon resin based substrate 11; a conductor part 13 formed on the substrate; a light emitting element 17 disposed on the conductor part through a metal joining material 18; and a peripheral wall body 21 joined onto the substrate through an adhesive material 21A and enclosing the light emitting element. The conductor part is disposed so as to be separated from the adhesive material.

Description

本発明は、発光ダイオード（ＬＥＤ：Light Emitting Diode）等の発光素子を搭載した半導体発光装置及びその製造方法に関する。   The present invention relates to a semiconductor light emitting device including a light emitting element such as a light emitting diode (LED) and a method for manufacturing the same.

ＬＥＤ素子を配線基板に搭載した発光装置が、照明、バックライト、産業機器等に従来から用いられてきた。このような発光装置には、２枚のエポキシ基板を貼り合わせてキャビティを形成し、キャビティの内部に発光素子を配置しているものがある。例えば、平板状のエポキシ樹脂からなる基板と、基板上に形成される第１および第２パターンと、発光ダイオードチップと、第１及び第２パターン上に形成される絶縁層と、発光ダイオードチップを囲うように絶縁層を介して基板上に設けられているエポキシ樹脂からなる周壁体と、を有する発光装置がある（特許文献１）。   A light-emitting device in which an LED element is mounted on a wiring board has been conventionally used for lighting, backlights, industrial equipment, and the like. In such a light emitting device, there is one in which two epoxy substrates are bonded together to form a cavity, and a light emitting element is disposed inside the cavity. For example, a substrate made of a flat epoxy resin, first and second patterns formed on the substrate, a light emitting diode chip, an insulating layer formed on the first and second patterns, and a light emitting diode chip There is a light emitting device having a peripheral wall made of an epoxy resin provided on a substrate through an insulating layer so as to surround (Patent Document 1).

特開２００１−１４４３３３号公報JP 2001-144333 A

上述したような発光装置においては、発光素子を収容するパッケージが安価で加工の容易な２枚のエポキシ樹脂からなる基板で形成されており、かつパッケージを形成する２枚の基板同士の接着にもエポキシ樹脂からなる接着剤を用いている。しかし、エポキシ樹脂は熱によって劣化しやすいので、発光素子の固定時等の工程において、パッケージに形成されている導電パターンに発光素子を搭載する際に、金属の共晶を用いた接合（共晶接合）等の高温を伴うプロセスを使用するとパッケージが熱によって劣化し、発光装置の発光効率または信頼性が低下してしまうという問題があった。従って、発光素子と導電パターンとの接合はエポキシ樹脂をバインダとする銀ペーストを用いた比較的低温な処理で行われていた。   In the light emitting device as described above, the package for housing the light emitting element is formed of two inexpensive and easily processable substrates made of epoxy resin, and the two substrates forming the package are also bonded to each other. An adhesive made of epoxy resin is used. However, since epoxy resin is easily deteriorated by heat, when a light emitting element is mounted on a conductive pattern formed on a package in a process such as fixing the light emitting element, bonding using a metal eutectic (eutectic crystal). When a process involving a high temperature such as bonding) is used, there is a problem that the package is deteriorated by heat, and the light emission efficiency or reliability of the light emitting device is lowered. Therefore, the bonding between the light emitting element and the conductive pattern is performed by a relatively low temperature treatment using a silver paste having an epoxy resin as a binder.

また、エポキシ樹脂は、短波長の光によっても劣化してしまう。従って、発光装置の使用に際し、パッケージに使用されているエポキシ樹脂及び発光素子と導電パターンとの接合に使用されている銀ペースト中のエポキシ樹脂の劣化が発生して、発光効率及び発光装置各部の接合強度等が低下するために発光装置の信頼性が低いという問題があった。   In addition, the epoxy resin is deteriorated by light having a short wavelength. Therefore, when the light emitting device is used, the epoxy resin used in the package and the epoxy resin in the silver paste used for joining the light emitting element and the conductive pattern are deteriorated, and the light emission efficiency and each part of the light emitting device are reduced. There is a problem that the reliability of the light emitting device is low due to a decrease in bonding strength and the like.

本発明は、上述した点に鑑みてなされたものであり、製造において安価な樹脂基板を用いつつ発光素子と基板との接合に高温を伴うプロセス使用することが可能であり、かつ使用による劣化または発光効率の低下の少ない発光装置及びその製造方法を提供することを目的とする。   The present invention has been made in view of the above-described points, and can be used in a process involving a high temperature in joining a light-emitting element and a substrate while using an inexpensive resin substrate in manufacturing, and deterioration or It is an object of the present invention to provide a light emitting device with little reduction in luminous efficiency and a method for manufacturing the same.

本発明の発光装置は、シリコーン樹脂系の基板と、基板上に形成された導電部と、導電部上に金属接合材を介して配置された発光素子と、基板上に接着材を介して接合されて発光素子を囲繞する周壁体と、を含み、導電部は接着材から離間して配されていることを特徴とする。   The light emitting device of the present invention is bonded to a silicone resin substrate, a conductive portion formed on the substrate, a light emitting element disposed on the conductive portion via a metal bonding material, and an adhesive on the substrate. And a peripheral wall body surrounding the light emitting element, wherein the conductive portion is disposed away from the adhesive.

また、本発明の発光装置の製造方法は、シリコーン樹脂系の基板上に導電部を形成するステップと、基板上に、導電部と離間させて接着材を塗布するステップと、導電部を露出させる貫通孔を有する周壁体を接着材上に配置するステップと、導電部上に金属接合材を介して発光素子を接合するステップと、を有し、接合するステップは、金属接合材を誘導加熱で加熱するステップを含むことを特徴とする。   The method for manufacturing a light emitting device of the present invention includes a step of forming a conductive portion on a silicone resin substrate, a step of applying an adhesive on the substrate so as to be separated from the conductive portion, and exposing the conductive portion. A step of disposing a peripheral wall body having a through hole on an adhesive material; and a step of bonding a light emitting element to the conductive portion via a metal bonding material. The bonding step includes induction heating of the metal bonding material. It is characterized by including the step of heating.

本発明の発光装置及びその製造方法では、製造時に、熱に弱い基板接合部と離間している部分のみが誘導加熱によって加熱される。このような構成によって、発光装置の歩留まり及び信頼性が向上する。   In the light emitting device and the method for manufacturing the same according to the present invention, only the portion separated from the heat-sensitive substrate bonding portion is heated by induction heating during manufacturing. With such a structure, the yield and reliability of the light emitting device are improved.

本発明の発光装置の平面図である。It is a top view of the light-emitting device of the present invention. 本発明の発光装置の断面図である。It is sectional drawing of the light-emitting device of this invention. 本発明の発光装置の製造方法の各工程における断面図である。It is sectional drawing in each process of the manufacturing method of the light-emitting device of this invention. 本発明の発光装置の製造方法の各工程における断面図である。It is sectional drawing in each process of the manufacturing method of the light-emitting device of this invention. 本発明の発光装置の製造方法の各工程における断面図である。It is sectional drawing in each process of the manufacturing method of the light-emitting device of this invention. 本発明の発光装置の製造方法の各工程における断面図である。It is sectional drawing in each process of the manufacturing method of the light-emitting device of this invention.

以下に、本発明の発光装置１について、図１ａ、ｂを参照しつつ説明する。図１ａは、本発明の実施例に係る発光装置１の光放射面側からみた平面図である。図１ｂは、図１ａにおける１ｂ−１ｂ線に沿った断面図である。   Below, the light-emitting device 1 of this invention is demonstrated, referring FIG. FIG. 1A is a plan view of a light emitting device 1 according to an embodiment of the present invention as viewed from the light emitting surface side. 1b is a cross-sectional view taken along line 1b-1b in FIG. 1a.

基板１１は、シリコーン樹脂からなる矩形の平面形状を有する基板である。基板１１の上面すなわち素子搭載面には、素子搭載ランド１３Ａ及びボンディングランド１３Ｂからなる導電部１３が形成されている。素子搭載ランド１３Ａ及びボンディングランド１３Ｂは、基板１１の上面の周縁部には形成されていない。また、素子搭載ランド１３Ａ及びボンディングランド１３Ｂは、各々スルーホール１５を介して基板１１の下面まで導通している。   The substrate 11 is a substrate having a rectangular planar shape made of silicone resin. On the upper surface of the substrate 11, that is, the element mounting surface, a conductive portion 13 including an element mounting land 13A and a bonding land 13B is formed. The element mounting land 13 </ b> A and the bonding land 13 </ b> B are not formed on the peripheral edge of the upper surface of the substrate 11. The element mounting land 13A and the bonding land 13B are electrically connected to the lower surface of the substrate 11 through the through holes 15, respectively.

素子搭載ランド１３上には、ＬＥＤ素子１７が搭載されている。ＬＥＤ素子１７は、例えば、一辺が３５０μｍの正方形を底辺とする高さが１００μｍの直方体であり、青色光（４３０ｎｍ〜４７０ｎｍ程度）を発する青色発光ダイオードである。ＬＥＤ素子１７は、素子搭載ランド１３Ａと対向する下面に電極１７Ａを有し、電極１７Ａと素子搭載ランド１３Ａとを金属接合材（例えば、金錫、はんだ等）１８等を用いた金属共晶によって接合（共晶接合）させることで素子搭載ランド１３Ａ上に固定されている。金属接合材１８は、予めＬＥＤ素子の底面に接合用膜として形成されてもよく、ＬＥＤ素子の搭載の際に素子搭載ランド１３Ａ上に供給されてもよく、その両方としてもよい。ＬＥＤ素子１７の底面に接合用膜として形成する場合には、例えば、金錫や金などを用いることができる。ＬＥＤ素子１７は、例えば、上面にＰ電極（図示せず）、下面にＮ電極１７Ａを有しており、Ｐ電極は、金（銅、白金、アルミウムの導電体等でもよい）のボンディングワイヤ１９を介してボンディングランド１３Ｂに電気的に接続されており、Ｎ電極は上述の共晶接合により素子搭載ランド１３Ａに電気的に接続されている。   An LED element 17 is mounted on the element mounting land 13. The LED element 17 is a blue light emitting diode that emits blue light (about 430 nm to 470 nm), for example, a rectangular parallelepiped having a height of 100 μm with a square having a side of 350 μm as a base. The LED element 17 has an electrode 17A on the lower surface facing the element mounting land 13A, and the electrode 17A and the element mounting land 13A are formed by metal eutectic using a metal bonding material (for example, gold tin, solder, etc.) 18 or the like. It is fixed on the element mounting land 13A by bonding (eutectic bonding). The metal bonding material 18 may be formed in advance as a bonding film on the bottom surface of the LED element, or may be supplied onto the element mounting land 13A when mounting the LED element, or both. In the case of forming as a bonding film on the bottom surface of the LED element 17, for example, gold tin or gold can be used. The LED element 17 has, for example, a P electrode (not shown) on the upper surface and an N electrode 17A on the lower surface, and the P electrode is a bonding wire 19 of gold (copper, platinum, aluminum conductor or the like). The N electrode is electrically connected to the element mounting land 13A by the eutectic bonding described above.

周壁体２１は、基板１１の上面の外縁に沿って形成され、中央に導電部１３が形成されている領域よりも大きい平面形状を有する矩形の貫通孔を有している。当該貫通孔の内壁は基板１１の上面とともに、ＬＥＤ素子１７及び導電部１３を囲む凹部２３を形成している。周壁体２１は、シリコーン樹脂からなり、エポキシ樹脂からなる接着材２１Ａによって基板１１上に固定されている。ここで、接着材２１Ａは、素子搭載ランド１３Ａ及びボンディングランド１３Ｂとは離間している。凹部２３は、例えば、ＬＥＤ素子１７から発光を基板上方に向けて配光するように機能したり、次に説明する封止部２５を形成する封止樹脂を収容する容器の一部として機能したりする。   The peripheral wall 21 is formed along the outer edge of the upper surface of the substrate 11, and has a rectangular through hole having a planar shape larger than the region where the conductive portion 13 is formed at the center. The inner wall of the through hole forms a recess 23 surrounding the LED element 17 and the conductive portion 13 together with the upper surface of the substrate 11. The peripheral wall body 21 is made of a silicone resin, and is fixed on the substrate 11 by an adhesive 21A made of an epoxy resin. Here, the adhesive 21A is separated from the element mounting land 13A and the bonding land 13B. The concave portion 23 functions, for example, to distribute light emitted from the LED element 17 toward the upper side of the substrate, or functions as a part of a container that contains a sealing resin that forms a sealing portion 25 described below. Or

封止部２５は、凹部２３内に、ＬＥＤ素子１７及びボンディングワイヤ１９を埋設するように充填されている。封止部２５は、透光性のある樹脂、例えば、シリコーン樹脂、エポキシ樹脂またはシリコーン及びエポキシ樹脂のハイブリッド樹脂を、凹部２３内に注入して硬化させることにより形成される。封止部２５は、例えば、ＬＥＤ素子１７及びボンディングワイヤ１９を湿気及び衝撃等の外的要因から保護する機能を果たす。なお、図１ａにおいては、図面の明快さのために封止部２５を省略している。   The sealing portion 25 is filled so that the LED element 17 and the bonding wire 19 are embedded in the recess 23. The sealing portion 25 is formed by injecting a resin having translucency, for example, a silicone resin, an epoxy resin, or a hybrid resin of silicone and an epoxy resin into the recess 23 and curing the resin. The sealing portion 25 functions to protect the LED element 17 and the bonding wire 19 from external factors such as moisture and impact, for example. In FIG. 1a, the sealing portion 25 is omitted for clarity of the drawing.

発光装置１を白色発光させる場合、封止部２５を波長変換層として使用してもよい。この場合、封止部２５には、例えば、ＹＡＧ（イットリウム・アルミニウム・ガーネット：Ｙ３Ａｌ５Ｏ１２）に付活剤としてＣｅ（セリウム）を導入したＹＡＧ：Ｃｅ蛍光体が分散されていてもよい。この蛍光体は、ＬＥＤ素子１７から発せられる、例えば、波長約４６０ｎｍの青色光を吸収して、約５６０ｎｍの発光ピーク波長を有する黄色光を発する。従って、ＬＥＤ素子１７から発せられて蛍光体に吸収されなかった青色光と蛍光体から発せられる黄色光とが混ざり合うことによって白色光が得られる。 When the light emitting device 1 emits white light, the sealing portion 25 may be used as a wavelength conversion layer. In this case, for example, a YAG: Ce phosphor in which Ce (cerium) is introduced as an activator in YAG (yttrium, aluminum, garnet: Y 3 Al 5 O 12 ) is dispersed in the sealing portion 25. Good. The phosphor emits yellow light having an emission peak wavelength of about 560 nm, for example, by absorbing blue light emitted from the LED element 17 and having a wavelength of about 460 nm. Accordingly, white light is obtained by mixing the blue light emitted from the LED element 17 and not absorbed by the phosphor and the yellow light emitted from the phosphor.

また、封止部２５には、発光装置の用途に応じて、例えば、二酸化ケイ素、酸化チタン、酸化アルミナ、酸化亜鉛等の散乱材が分散されていてもよい。   Moreover, scattering materials such as silicon dioxide, titanium oxide, alumina oxide, and zinc oxide may be dispersed in the sealing portion 25 according to the use of the light emitting device.

以下に、上述した発光装置１を製造する方法について、図２ａ−ｄを用いて説明する。図２ａ−ｄは、本発明の実施例に係る発光素子の製造方法の各工程における断面図である。尚図２ａ−ｄにおいては、１つの発光装置の断面を示しているが、実際の製造時は、複数の発光装置が配列されたシート状態で製造され、最後にダイシング等で個々の発光装置に個片化されてもよい。   Below, the method to manufacture the light-emitting device 1 mentioned above is demonstrated using FIG. 2 a-d. 2a to 2d are cross-sectional views in each step of the light emitting device manufacturing method according to the embodiment of the present invention. 2A to 2D show a cross section of one light emitting device, but in actual manufacturing, the light emitting device is manufactured in a sheet state in which a plurality of light emitting devices are arranged, and finally, the individual light emitting devices are formed by dicing or the like. It may be divided into pieces.

まず、図２ａに示すように、シリコーン樹脂基板１１の両面に銅箔が貼り合わされた銅貼基板に、当該基板の上面から下面に貫通する貫通孔（後述の上下の銅箔を電気的に接続するスルーホール１５またはビアに相当）を例えばドリルまたはパンチ等で形成する。その後、フォトリソグラフィ技術を用いて銅箔をエッチング処理し、基板上面の素子搭載ランド１３Ａ及びボンディングランド１３Ｂ、基板裏面の外部端子からなる導電領域のパターン形成を行う。さらに、パターン形成した銅箔上及び貫通孔内に銅メッキ等を施し、導電部１３、外部端子及び上下の導電部１３を電気的に接続するスルーホール１５を完成する。素子搭載ランド１３Ａは、基板１１の上面のＬＥＤ素子１７を搭載する領域に亘って形成され、ボンディングランド１３Ｂは、基板１１の上面に素子搭載ランド１３Ａと電気的に接続されずに離間して形成される。素子搭載ランド１３Ａ及びボンディングランド１３Ｂは、各々スルーホール１５を通って、基板１１の裏面まで形成される。従って、素子搭載ランド１３Ａ及びボンディングランド１３Ｂは、後に搭載されるＬＥＤ素子１７に、基板１１の裏面から電力を供給可能なように形成される。導電部１３は、基板１１の上面において、後に接着材２１Ａが配置される基板１１の周縁部に沿った周縁領域ＳＲ以外の領域に形成される。   First, as shown in FIG. 2a, through-holes (upper and lower copper foils described later are electrically connected to a copper-clad substrate in which copper foils are bonded to both surfaces of the silicone resin substrate 11 from the upper surface to the lower surface of the substrate. For example, a drill or a punch. Thereafter, the copper foil is etched using a photolithography technique to form a pattern of a conductive region including the element mounting lands 13A and bonding lands 13B on the upper surface of the substrate and external terminals on the back surface of the substrate. Further, copper plating or the like is performed on the patterned copper foil and in the through hole, thereby completing the through hole 15 that electrically connects the conductive portion 13, the external terminal, and the upper and lower conductive portions 13. The element mounting land 13A is formed over a region on the upper surface of the substrate 11 where the LED elements 17 are mounted, and the bonding land 13B is formed on the upper surface of the substrate 11 so as not to be electrically connected to the element mounting land 13A. Is done. The element mounting land 13 </ b> A and the bonding land 13 </ b> B are formed through the through holes 15 to the back surface of the substrate 11. Therefore, the element mounting land 13A and the bonding land 13B are formed so that power can be supplied from the back surface of the substrate 11 to the LED element 17 to be mounted later. The conductive portion 13 is formed on the upper surface of the substrate 11 in a region other than the peripheral region SR along the peripheral portion of the substrate 11 where the adhesive 21A is disposed later.

次に、図２ｂに示すように、基板１１の上面の導電部１３が形成されていない周縁領域ＳＲに配置した接着材２１Ａを介して、基板１１上に周壁体２１を固定する。   Next, as shown in FIG. 2 b, the peripheral wall body 21 is fixed on the substrate 11 through an adhesive 21 </ b> A disposed in the peripheral region SR where the conductive portion 13 is not formed on the upper surface of the substrate 11.

本実施例では、シート状の接着材２１Ａが接着された周壁体２１を基板１１の上面の導電部１３が形成されていない周縁領域に載置し、熱圧着することにより接着材２１Ａを硬化させ、周壁体２１と基板１１とを固定した。具体的には、接着材２１Ａとして半硬化状態のエポキシ樹脂系の接着シートを貫通孔形成前の周壁体２１に貼り合わせ、周壁体２１及び接着シートの二層に同時に貫通孔を形成後、シート状の接着材２１Ａが接着された周壁体２１を基板１１の上面の導電部１３が形成されていない周縁領域ＳＲに載置し、熱圧着することにより接着材２１Ａを硬化させて周壁体２１と基板１１とを固定した。   In this embodiment, the peripheral wall body 21 to which the sheet-like adhesive material 21A is bonded is placed on the peripheral region of the upper surface of the substrate 11 where the conductive portion 13 is not formed, and the adhesive material 21A is cured by thermocompression bonding. The peripheral wall 21 and the substrate 11 were fixed. Specifically, a semi-cured epoxy resin adhesive sheet as the adhesive 21A is bonded to the peripheral wall body 21 before forming the through hole, and the through hole is simultaneously formed in the two layers of the peripheral wall body 21 and the adhesive sheet. The peripheral wall body 21 to which the adhesive material 21A is bonded is placed on the peripheral region SR on the upper surface of the substrate 11 where the conductive portion 13 is not formed, and the adhesive material 21A is cured by thermocompression bonding, so that the peripheral wall body 21 and The substrate 11 was fixed.

接着材２１Ａは、上記した方法以外に、スクリーン印刷等で塗布したり、半硬化状態の接着樹脂フィルムからなるシート状の接着シートを所望の形状（周壁体２１とほぼ同形状）に加工したものを配置したりすることとしてもよい。このように、筐体である基板１１及び周壁体２１を短波長光に対して劣化しにくいシリコーン樹脂で形成することで、使用による発光装置１の筐体の劣化を低減し、発光装置の信頼性を向上させることができる。   In addition to the method described above, the adhesive 21A is applied by screen printing or the like, or a sheet-like adhesive sheet made of a semi-cured adhesive resin film is processed into a desired shape (substantially the same shape as the peripheral wall 21). It is good also as arranging. Thus, by forming the substrate 11 and the peripheral wall body 21 which are the casings with a silicone resin which is not easily deteriorated with respect to short wavelength light, the deterioration of the casing of the light emitting device 1 due to use can be reduced, and the reliability of the light emitting device can be reduced. Can be improved.

次に、図２ｃに示すように、基板１１の上面に形成された素子搭載ランド１３Ａ上に、金錫またははんだペースト等のペースト状の金属接合材１８を、例えばポッティング等で塗布する。そして、金属接合材１８上に、素子搭載ランド１３Ａと対向した下面に電極１７Ａを有するＬＥＤ素子１７を載置し、下方から、コイルによって電磁波を発する誘導加熱装置ＩＨによって誘導加熱を行う。   Next, as shown in FIG. 2c, a paste-like metal bonding material 18 such as gold tin or solder paste is applied onto the element mounting land 13A formed on the upper surface of the substrate 11 by, for example, potting. Then, the LED element 17 having the electrode 17A on the lower surface facing the element mounting land 13A is placed on the metal bonding material 18, and induction heating is performed from below by an induction heating device IH that emits electromagnetic waves by a coil.

この誘導加熱によって、基板１１上の導電部材である導電部１３、電極１７Ａ及びペースト状の金属接合材１８が、選択的かつ瞬間的に金錫またははんだ共晶反応等の接合熱処理に必要な温度（約３００℃）に加熱される。ペースト状の金属接合材１８は、誘導加熱を開始すると瞬時に、素子搭載ランド１３及び電極１７Ａの表面に濡れ広がり、その後、誘導加熱を停止すると冷却されて固化する。このようにして、素子搭載ランド１３Ａの上面とＬＥＤ素子１７下面の電極とが金属接合材１８によって接合固定され、ＬＥＤ素子１７の下面にある電極１７Ａと素子搭載ランド１３Ａとが金属接合材１８を介して電気的に接続される。   Due to this induction heating, the conductive portion 13, the electrode 17A and the paste-like metal bonding material 18 which are conductive members on the substrate 11 are selectively and instantaneously required for a bonding heat treatment such as gold-tin or solder eutectic reaction. (About 300 ° C.). The paste-like metal bonding material 18 instantly spreads on the surfaces of the element mounting lands 13 and the electrodes 17A when induction heating is started, and then is cooled and solidified when induction heating is stopped. In this way, the upper surface of the element mounting land 13A and the electrode on the lower surface of the LED element 17 are bonded and fixed by the metal bonding material 18, and the electrode 17A and the element mounting land 13A on the lower surface of the LED element 17 connect the metal bonding material 18 to each other. Electrically connected.

この工程において、金属接合材１８を反応させるための加熱は電磁波を用いた誘導加熱によって行われるので、直接加熱されるのは、導電性を有する導電部１３、電極１７Ａ及び金属接合材１８のみである。また、導電性を有するこれらの部材と、周壁体２１及び熱に脆弱なエポキシ樹脂を含む接着材２１Ａとは離間されている。従って、このＬＥＤ素子１７の搭載工程は、周壁体２１及び熱に脆弱なエポキシ樹脂からなる接着材２１Ａに直接熱を加えることなく行うことが可能である。   In this step, since the heating for reacting the metal bonding material 18 is performed by induction heating using electromagnetic waves, only the conductive portion 13, the electrode 17A and the metal bonding material 18 having conductivity are directly heated. is there. In addition, these conductive members are separated from the peripheral wall body 21 and the adhesive 21A containing an epoxy resin that is vulnerable to heat. Therefore, the mounting step of the LED element 17 can be performed without directly applying heat to the peripheral wall body 21 and the adhesive 21A made of an epoxy resin that is vulnerable to heat.

その後、図２ｄに示すように、ＬＥＤ素子１７の上面にある電極（図示せず）とボンディングランド１３Ｂとをボンディングワイヤ１９を用いて接続し、凹部２３内にＬＥＤ素子１７及びボンディングワイヤ１９が埋設されるように透光性のある樹脂を充填して、封止部２５を形成し、発光装置１が完成する。   Thereafter, as shown in FIG. 2 d, an electrode (not shown) on the upper surface of the LED element 17 and the bonding land 13 </ b> B are connected using a bonding wire 19, and the LED element 17 and the bonding wire 19 are embedded in the recess 23. As described above, a light-transmitting resin is filled to form the sealing portion 25, whereby the light emitting device 1 is completed.

このように、本発明の発光装置及びその製造方法によれば、基板１１及び周壁体２１に熱及び青色等の短波長光に対して劣化しにくいシリコーン樹脂材料を使用している。従って、基板１１及び周壁体２１の劣化の発生が低減でき、発光装置の信頼性を向上させることができる。   As described above, according to the light emitting device and the manufacturing method thereof of the present invention, the substrate 11 and the peripheral wall body 21 are made of a silicone resin material that hardly deteriorates against short wavelength light such as heat and blue. Therefore, the occurrence of deterioration of the substrate 11 and the peripheral wall body 21 can be reduced, and the reliability of the light emitting device can be improved.

また、本発明発光装置及びその製造方法によれば、基板１１と周壁体２１との接合部に存在する接着材２１Ａと導電部１３とを離間させて形成し、かつ素子搭載ランド１３ＡとＬＥＤ素子１７との間の接合部材である金属接合材１８を誘導加熱で瞬間的に加熱して、素子搭載ランド１３ＡとＬＥＤ素子１７との接合を行う。このため、素子搭載ランド１３ＡとＬＥＤ素子１７との接合において、熱に脆弱なエポキシ樹脂からなる接着材２１Ａは直接加熱されない。従って、接着材２１Ａの劣化を考慮せずに、素子搭載ランド１３ＡとＬＥＤ素子１７との接合において高温を要する接合処理を用いることが可能である。   In addition, according to the light emitting device and the method for manufacturing the same of the present invention, the adhesive 21A and the conductive portion 13 existing at the joint portion between the substrate 11 and the peripheral wall body 21 are formed apart from each other, and the element mounting land 13A and the LED element are formed. The metal bonding material 18, which is a bonding member between the element mounting land 17 and the LED element 17, is instantaneously heated by induction heating to bond the element mounting land 13 </ b> A and the LED element 17. For this reason, in joining the element mounting land 13 </ b> A and the LED element 17, the adhesive 21 </ b> A made of an epoxy resin vulnerable to heat is not directly heated. Therefore, it is possible to use a bonding process that requires a high temperature in bonding the element mounting land 13A and the LED element 17 without considering deterioration of the adhesive 21A.

上述した実施例においては、周壁体２１の材料をシリコーン樹脂からなる材料としたが、周壁体２１の材料をエポキシ樹脂からなる材料としてもよい。上記実施例においては、接着材２１Ａのみならず周壁体２１も、加熱される導電体から離間されているので直接熱が加わらず、周壁体２１の材料おいても熱による劣化が発生しないからである。   In the embodiment described above, the material of the peripheral wall body 21 is made of a silicone resin, but the material of the peripheral wall body 21 may be made of an epoxy resin. In the above embodiment, not only the adhesive material 21A but also the peripheral wall body 21 is separated from the conductor to be heated, so heat is not directly applied, and the material of the peripheral wall body 21 is not deteriorated by heat. is there.

また、ＬＥＤ素子１７は、２本のボンディングワイヤによって電気的接続を得るタイプでもよく、ボンディングワイヤを用いないフリップチップ型の素子であってもよい。   Further, the LED element 17 may be of a type that obtains electrical connection with two bonding wires, or may be a flip chip type element that does not use bonding wires.

また、上述した実施例においては、ＬＥＤ素子１７は、両電極が上面と下面に形成されている構成としたが、両電極が上面に形成され、下面に電極が形成されていないものを用いてもよい。この場合も、金属接合材１８は、ＬＥＤ素子１７の下面に形成しても、素子搭載ランド１３Ａ上に素子搭載時に供給されても、その両方であってもよいが、ＬＥＤ素子１７の下面に金属層が形成されていることが好ましい。   In the above-described embodiment, the LED element 17 has a configuration in which both electrodes are formed on the upper surface and the lower surface. However, both electrodes are formed on the upper surface and no electrode is formed on the lower surface. Also good. Also in this case, the metal bonding material 18 may be formed on the lower surface of the LED element 17, supplied to the element mounting land 13 </ b> A when the element is mounted, or both. A metal layer is preferably formed.

上述した実施例における種々の数値、寸法、材料等は、例示に過ぎず、用途及び使用される発光素子等に応じて、適宜選択することができる。   Various numerical values, dimensions, materials, and the like in the above-described embodiments are merely examples, and can be appropriately selected according to the application and the light-emitting element used.

１ 発光装置
１１ 基板
１３ 導電部
１３Ａ 素子搭載ランド
１３Ｂ ボンディングランド
１５ スルーホール
１７ ＬＥＤ素子
１７Ａ 電極
１８ 金属接合材
１９ ボンディングワイヤ
２１ 周壁体
２１Ａ 接着材
２３ 凹部
２５ 封止部
ＳＲ 周縁領域
ＩＨ 誘導加熱装置 DESCRIPTION OF SYMBOLS 1 Light-emitting device 11 Board | substrate 13 Conductive part 13A Element mounting land 13B Bonding land 15 Through hole 17 LED element 17A Electrode 18 Metal bonding material
19 Bonding wire 21 Peripheral wall 21A Adhesive 23 Recess 25 Sealing portion SR Peripheral region IH Induction heating device

Claims (6)

シリコーン樹脂系の基板と、
前記基板上に形成された導電部と、
前記導電部上に金属接合材を介して配置された発光素子と、
前記基板上に接着材を介して接合されて前記発光素子を囲繞する周壁体と、
を含み、前記導電部は前記接着材から離間して配されていることを特徴とする発光装置。 A silicone resin substrate;
A conductive portion formed on the substrate;
A light emitting device disposed on the conductive portion via a metal bonding material;
A peripheral wall body that is bonded to the substrate via an adhesive and surrounds the light emitting element;
The light emitting device is characterized in that the conductive portion is disposed apart from the adhesive. 前記金属接合材は、共晶材料であることを特徴とする請求項１に記載の発光装置。   The light emitting device according to claim 1, wherein the metal bonding material is a eutectic material. 前記接着材は、エポキシ樹脂系材料からなることを特徴とする請求項１または２に記載の発光装置。   The light emitting device according to claim 1, wherein the adhesive is made of an epoxy resin material. シリコーン樹脂系の基板上に導電部を形成するステップと、
前記導電部を露出させる貫通孔を有する周壁体を前記基板上に接着材を介して配置するステップと、
前記導電部上に金属接合材を介して発光素子を接合するステップと、を有し、
前記周壁体を配置するステップにおいて、前記接着材は、前記導電部と離間して配置され、 前記接合するステップは、前記金属接合材を誘導加熱で加熱するステップを含むことを特徴とする発光装置の製造方法。 Forming a conductive portion on a silicone resin substrate;
Disposing a peripheral wall body having a through hole exposing the conductive portion on the substrate via an adhesive;
Bonding a light emitting element on the conductive part via a metal bonding material,
In the step of disposing the peripheral wall body, the adhesive material is disposed apart from the conductive portion, and the bonding step includes a step of heating the metal bonding material by induction heating. Manufacturing method. 前記金属接合材は、共晶材料であることを特徴とする請求項４に記載の製造方法。   The manufacturing method according to claim 4, wherein the metal bonding material is a eutectic material. 前記接着材は、エポキシ樹脂系材料からなることを特徴とする請求項４または５に記載の製造方法。   The manufacturing method according to claim 4, wherein the adhesive is made of an epoxy resin material.
JP2012038161A 2012-02-24 2012-02-24 Light emitting device and manufacturing method of the same Pending JP2013175528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012038161A JP2013175528A (en) 2012-02-24 2012-02-24 Light emitting device and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012038161A JP2013175528A (en) 2012-02-24 2012-02-24 Light emitting device and manufacturing method of the same

Publications (1)

Publication Number Publication Date
JP2013175528A true JP2013175528A (en) 2013-09-05

Family

ID=49268202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012038161A Pending JP2013175528A (en) 2012-02-24 2012-02-24 Light emitting device and manufacturing method of the same

Country Status (1)

Country Link
JP (1) JP2013175528A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108134001A (en) * 2017-12-25 2018-06-08 河源市富宇光电科技有限公司 A kind of packaging method and light emitting diode of light emitting diode pole

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258644A (en) * 1985-09-06 1987-03-14 Mitsubishi Electric Corp Assembling semiconductor device
JP2004289106A (en) * 2003-01-27 2004-10-14 Kyocera Corp Package for accommodating light emitting element and light emitting device
JP2005244228A (en) * 2004-02-23 2005-09-08 Asm Assembly Automation Ltd Device and method of mounting die
WO2010150754A1 (en) * 2009-06-22 2010-12-29 日亜化学工業株式会社 Light-emitting device
WO2011118108A1 (en) * 2010-03-23 2011-09-29 株式会社朝日ラバー Silicone resin reflective substrate, manufacturing method for same, and base material composition used in reflective substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258644A (en) * 1985-09-06 1987-03-14 Mitsubishi Electric Corp Assembling semiconductor device
JP2004289106A (en) * 2003-01-27 2004-10-14 Kyocera Corp Package for accommodating light emitting element and light emitting device
JP2005244228A (en) * 2004-02-23 2005-09-08 Asm Assembly Automation Ltd Device and method of mounting die
WO2010150754A1 (en) * 2009-06-22 2010-12-29 日亜化学工業株式会社 Light-emitting device
WO2011118108A1 (en) * 2010-03-23 2011-09-29 株式会社朝日ラバー Silicone resin reflective substrate, manufacturing method for same, and base material composition used in reflective substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108134001A (en) * 2017-12-25 2018-06-08 河源市富宇光电科技有限公司 A kind of packaging method and light emitting diode of light emitting diode pole

Similar Documents

Publication Publication Date Title
TWI505519B (en) Light-emitting diode light bar and the method for manufacturing the same
JP2011249501A (en) Light-emitting device
TW201225359A (en) LED package
JP5940799B2 (en) Electronic component mounting package, electronic component package, and manufacturing method thereof
JP2013110210A (en) Semiconductor optical device
JP5294902B2 (en) Manufacturing method of surface mounted light emitting device
KR101181224B1 (en) Led package and fabricating method of the same
JP6280710B2 (en) WIRING BOARD, LIGHT EMITTING DEVICE AND WIRING BOARD MANUFACTURING METHOD
JP2009283653A (en) Light-emitting device and production method therefor
TW201511347A (en) LED package structure and manufacturing method thereof
US8461614B2 (en) Packaging substrate device, method for making the packaging substrate device, and packaged light emitting device
WO2018105448A1 (en) Light emitting device
WO2011083703A1 (en) Led module device and method for manufacturing same
US10174914B2 (en) Light-emitting-element mounting substrate, light emitting device, and light emitting module
JP2012216726A (en) Semiconductor light-emitting device
JP6802620B2 (en) Manufacturing method of semiconductor light emitting device and semiconductor light emitting device
JP2006073699A (en) Light emitting element accommodating package
KR101115403B1 (en) Light emitting apparatus
JP2013254810A (en) Metal substrate with feedthrough terminal and surface-mounted device using the same
JP4655735B2 (en) LED unit
JP2013175528A (en) Light emitting device and manufacturing method of the same
JP7048228B2 (en) Semiconductor light emitting device
JP6192377B2 (en) LED light source module
JP2006013465A (en) Semiconductor device and its manufacturing method
JP5880025B2 (en) Light emitting device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150212

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20151118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151201

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160120

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20160628