JP2013171997A - Light-emitting device and lighting equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device which can effectively utilize light emitted by a semiconductor light-emitting element, and provide lighting equipment having the light-emitting device.SOLUTION: A light-emitting device comprises: a metal base substrate 5; a light-emitting part 2 arranged on the metal base substrate 5; a cylindrical reflection member 3 arranged on the metal base substrate 5 for surrounding the light-emitting part 2; and a resin body 4 surrounding the reflection member 3. The cylindrical reflection member 3 and the resin body 4 reflect at least a part of light emitted by the light-emitting part 2 for radiating the light in a direction toward an opening.

Description

  The present invention relates to a light-emitting device and a lighting fixture, and more particularly to a light-emitting device and a lighting fixture that improve the reflectance of light emitted from a semiconductor light-emitting element.

  Semiconductor light-emitting elements represented by LEDs are widely used as light sources for various light-emitting devices and lighting fixtures. It is preferable that the light emitted from the semiconductor light emitting element is efficiently emitted from such a light emitting device or lighting fixture. Patent Document 1 describes a semiconductor light emitting device in which a reflector is installed around a semiconductor light emitting element in order to improve the light directivity and front luminance of the semiconductor light emitting device.

  Patent Document 2 describes a transmitter for optical communication in which a semiconductor light emitting element is installed in a recess of a package body. In the transmitter for optical communication described in Patent Document 2, the semiconductor light-emitting element is conductively connected to the connecting portion through a metal coating provided on the bottom of the recessed portion, and is electrically connected to the connecting portion through a bonding wire. It is connected.

JP 2007-81430 A JP-T-2006-514434

  In the semiconductor light emitting device described in Patent Document 1, the reflector is provided with a notch through which a wiring conductor used for connecting the semiconductor light emitting element in the reflector and the external conductor outside the reflector passes. Yes. For this reason, the light emitted from the semiconductor light emitting element leaks from the notch, and the light emitted by the semiconductor light emitting element is not effectively utilized.

  Moreover, the transmitter for optical communication described in Patent Document 2 is provided with a protruding portion on the wall of the recessed portion in order to connect to the connecting portion via a bonding wire. Therefore, the light emitted from the semiconductor light emitting element is emitted to the bay portion, and the light cannot be emitted in a desired direction, and the light emitted by the semiconductor light emitting element is not effectively utilized.

  This invention is made | formed in view of such a subject, The place made into the objective is providing the light-emitting device and lighting fixture which can utilize effectively the light which the semiconductor light-emitting element emitted.

  To achieve the above object, a light emitting device according to the present invention includes a substrate, a semiconductor light emitting element disposed on the substrate, a cylindrical reflecting member disposed on the substrate and surrounding the semiconductor light emitting element, and a reflecting member. The cylindrical reflecting member and the resin body reflect at least a part of the light emitted by the semiconductor light emitting element and radiate it in the opening direction.

  The resin body is preferably formed so as to surround the reflecting member up to a height higher than the height from the position in contact with the surface of the substrate in the reflecting member to the opening end. According to such a configuration, the resin body surrounds the periphery of the semiconductor light emitting element to a higher position, and the light emitted by the semiconductor light emitting element is satisfactorily suppressed from leaking to the outside, and is emitted by the semiconductor light emitting element. Since at least a part of the light is reflected and emitted in the opening direction of the reflecting member, the light emitted by the semiconductor light emitting element can be used more effectively and the light emission efficiency of the light emitting device can be improved.

  The resin body includes a notch that is a gap formed from the opening end of the reflecting member toward the substrate, and an electric wire that passes through the notch from the semiconductor light emitting element and is connected to a predetermined electrical connection terminal. The reflective member is preferably formed so as to close the gap formed by the notch. According to such a configuration, among the light emitted from the semiconductor light emitting element, the light that passes through the notch and goes to the outside of the cylinder of the reflecting member is reflected by the resin body and returned to the inside of the cylinder. Light emitted by the light emitting element can be used more effectively, and the light emission efficiency of the light emitting device can be improved.

  In the light emitting device, a first terminal and a second terminal are formed as electrical connection terminals, and a first electric wire for connecting the semiconductor light emitting element and the first terminal as an electric wire, and the semiconductor light emitting element and the second terminal are provided. A second electric wire to be connected may be provided, and a first cutout portion through which the first electric wire passes and a second cutout portion through which the second electric wire passes may be provided as the cutout portions. According to such a configuration, even in the case where a plurality of notches are provided, out of the light emitted from the semiconductor light emitting element, the light passes through each notch and travels outside the cylinder of the reflecting member. Since the light is reflected by the resin body and returned to the cylinder, the light emitted by the semiconductor light emitting element can be used more effectively and the light emission efficiency of the light emitting device can be improved.

  In the light emitting device, a plurality of semiconductor light emitting elements are disposed in a region surrounded by the reflecting member on the substrate, and first and second terminals corresponding to each semiconductor light emitting element are formed as electrical connection terminals, respectively. Each of the electric wires includes a first electric wire that connects each semiconductor light emitting element and the corresponding first terminal, and a second electric wire that connects each semiconductor light emitting element and the corresponding second terminal. A first cutout portion through which one electric wire passes and a second cutout portion through which each second electric wire passes may be provided. With such a configuration, when a plurality of semiconductor light emitting elements are arranged on the substrate, a plurality of notches are provided corresponding to the plurality of first electric wires and the plurality of second electric wires, respectively. Even if it exists, since the light of the direction which goes through each notch part and goes to the cylinder outside of a reflection member among the light which a semiconductor light emitting element emitted, it is reflected by a resin body and is returned in a cylinder. The light emitted by can be used more effectively, and the light emission efficiency of the light emitting device can be improved.

  The light emitting device may be configured to include an electric wire connected to a predetermined electrical connection terminal across the reflective member from the semiconductor light emitting element. According to such a configuration, the reflecting member reflects at least a part of the light emitted by the semiconductor light emitting element and emits it in the opening direction of the reflecting member, and the light emitted by the semiconductor light emitting element leaks to the outside. Since the notch is not provided, the light emitted by the semiconductor light emitting element can be used more effectively and the light emission efficiency of the light emitting device can be improved.

  The light emitting device may include a sealing material that fills a region surrounded by the reflecting member and covers the semiconductor light emitting element, and the electric wire may be covered with the sealing material and the resin body. According to such a structure, an electric wire can be protected with a sealing material and a resin body.

  The sealing material may be filled in a region surrounded by the reflecting member and the resin body. Moreover, the sealing material may contain at least one of a phosphor, a scattering agent, and a thixotropic agent.

  The resin body may include a reflective material that reflects light. According to such a configuration, at least a part of the light emitted by the semiconductor light emitting element is reflected by the reflecting material and radiated in the opening direction of the reflecting member, so that the light emitted by the semiconductor light emitting element can be used more effectively. In addition, the light emission efficiency of the light emitting device can be improved.

  The substrate may be a metal plate.

  The metal plate and the reflection member may be configured to reflect light at a higher rate than when the high reflection processing is performed and the high reflection processing is not performed. According to such a configuration, at least a part of the light emitted by the semiconductor light emitting element is reflected by the highly reflective metal plate and the reflecting member, thereby improving the light emission efficiency of the light emitting device. Can do.

  The light emitting device includes an insulating layer that covers at least a part of a region outside the reflecting member on a surface of the substrate on which the reflecting member is installed, and an insulating resin that is formed on the insulating layer and covers the electric wiring formed on the insulating layer The insulating resin may be configured to include a reflective material that reflects light. Light emitted by the semiconductor light emitting element can be used more effectively, and the light emission efficiency of the light emitting device can be improved. According to such a configuration, at least a part of the light emitted by the semiconductor light emitting element is reflected by the reflecting material, so that the light emission efficiency of the light emitting device can be improved.

  The peak wavelength of light emitted from the semiconductor light emitting element may be configured to be 380 nm or more and 420 nm or less.

  It is preferable that the light emitting device includes a heat dissipation member fixed to a position corresponding to a position where the semiconductor light emitting element is disposed on a surface of the substrate opposite to the surface where the semiconductor light emitting element is disposed. With such a configuration, the heat generated by the semiconductor light emitting device can be dissipated well.

  Moreover, the lighting fixture by this invention for achieving the said objective has a light-emitting device as described above, It is characterized by the above-mentioned.

  According to the present invention, since the reflecting member and the resin body reflect at least a part of the light emitted by the semiconductor light emitting element and radiate it in the opening direction of the reflecting member, the light emitted by the semiconductor light emitting element is more effective. The light emission efficiency of the light emitting device can be improved.

It is a schematic top view which shows the structural example of the light-emitting device of 1st Embodiment of this invention. It is a schematic sectional drawing which follows the II-II line in FIG. It is a graph which shows the example of the reflectance of the light of the base material used for a metal base board | substrate. It is a schematic perspective view which shows the structure of a thermal radiation member. It is a schematic perspective view which shows a reflecting member. It is a schematic top view which shows the structure of the modification of a light-emitting device. It is a schematic perspective view which shows the modification of a reflecting member. It is a schematic top view which shows the structural example of the light-emitting device of 2nd Embodiment of this invention. It is a schematic sectional drawing which follows the IX-IX line in FIG. It is a schematic perspective view which shows the reflection member of 2nd Embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, this invention is not limited to the content demonstrated below, In the range which does not deviate from the summary, it can change arbitrarily and can implement. In addition, the drawings used in the description of the present embodiment all schematically show the characteristics of the light emitting device 1 and the like according to the present invention, and in order to deepen the understanding, partial emphasis, enlargement and reduction are made as necessary. , Or may be omitted. Furthermore, the various numerical values used are merely examples, and can be changed variously as necessary.

  FIG. 1 is a schematic top view illustrating a configuration example of the light emitting device 1 according to the first embodiment. FIG. 2 is a schematic cross-sectional view showing a configuration example of the light-emitting device 1 according to the first embodiment of the present invention, and shows a cross section taken along the line II-II in FIG. As shown in FIGS. 1 and 2, the light emitting device 1 according to the first embodiment of the present invention includes a light emitting unit (semiconductor light emitting element) 2, a reflecting member 3, a resin body 4, and a metal base substrate (substrate) 5. .

(overall structure)
The light emitting unit 2 is installed on the upper surface 5 a on the metal base substrate 5 that has been subjected to high reflection processing. The reflecting member 3 is formed in a cylindrical shape, and at least the inner wall 3a and one end surface 3b are subjected to high reflection processing. The reflecting member 3 is installed on the upper surface 5a of the metal base substrate 5 so that the inner wall 3a surrounds the periphery of the light emitting unit 2, and the other end surface 3c is fixed to the upper surface 5a. In the present embodiment, the light emitting device 1 is provided as a light source of a lighting fixture, and dissipates heat generated by the light emitting unit 2 on the lower surface 5b that is the surface opposite to the upper surface 5a of the metal base substrate 5. The heat radiating member 30 is fixed. That is, in this embodiment, the light emitting device 1 including the heat dissipation member 30 and the external wiring (not shown) constitute a lighting fixture.

  The high reflection process performed on at least the inner wall 3a and one end surface 3b of the reflecting member 3 and at least the region 5a1 of the upper surface 5a of the metal base substrate 5 will be described. The high reflection process is a process performed to reflect the irradiated light at a higher rate than the case where the high reflection process is not performed. Specifically, for example, the reflection member 3 and the metal base substrate 5 are used. A process of laminating and forming a plurality of antioxidant films having different refractive indexes on the surface of the base material, a process of forming an aluminum or silver layer, and a process of polishing the surfaces of the reflecting member 3 and the metal base substrate 5 Etc. In addition, since the reflectance of light falls when the surface is oxidized, the high reflection treatment generally includes a treatment for exhibiting an antioxidant effect.

  FIG. 3 is a graph showing an example of the light reflectance of the base material used for the metal base substrate 5. Generally, copper or aluminum is used for the base material of the metal base substrate 5. However, it is known that the surface of copper or aluminum is likely to be oxidized unless a treatment for exhibiting an antioxidant effect is performed. In FIG. 3, an example of the light reflectivity by the base material whose surface is oxidized without performing the treatment for exhibiting the antioxidant effect is shown by a broken line. Moreover, in FIG. 3, the example of the reflectance of the light by the base material by which the high reflection process which also exhibits an antioxidant effect was made is shown as the continuous line. As shown in FIG. 3, the base material that has been subjected to the high reflection treatment reflects light at a higher rate than the base material that has not been subjected to the high reflection treatment.

(Light emitting part)
The light emitting unit 2 includes an LED chip 21 and a fluorescent member 22. The LED chip 21 is provided with an anode side connection terminal 21a that is an electrical connection terminal on the anode side and a cathode side connection terminal 21b that is an electrical connection terminal on the cathode side. The LED chip 21 is bonded to the upper surface 5 a of the metal base substrate 5 with a die bond agent 6. The fluorescent member 22 is filled in the cylinder of the reflecting member 3 and covers the LED chip 21.

  The LED chip 21 is preferably a purple LED chip that emits light having a maximum peak wavelength of 380 nm or more and 420 nm or less. The LED chip 21 may be a blue LED chip that emits light having a maximum peak wavelength of 350 nm or more and 520 nm or less, more preferably light having a maximum peak wavelength of 420 nm or more and 480 nm or less.

The general purple and blue LED chip 21 is, for example, a GaN-based semiconductor represented by the general formula Al _a In _b Ga _1-ab N (0 ≦ a ≦ 1, 0 ≦ b ≦ 1, 0 ≦ a + b ≦ 1). A pn junction type light emitting structure formed using The general purple and blue LED chips 21 are manufactured through a process of epitaxially growing a GaN-based semiconductor on the sapphire substrate by the MOVPE method. In this step, an n-type conductive layer is formed on the sapphire substrate via a buffer layer, and an active layer and a p-type conductive layer are sequentially formed on the n-type conductive layer. The electrodes are respectively formed on the surface of the p-type conductive layer and the surface of the n-type conductive layer exposed to the p-type conductive layer side.

As a substrate preferably used, a single substrate made of sapphire, spinel, silicon carbide, zinc oxide, magnesium oxide, GaN, AlGaN, AlN, NGO (NdGaO ₃ ), LGO (LiGaO ₂ ), LAO (LaAlO ₃ ), or the like. A crystal substrate is mentioned. Further, the LED chip 21 can be mounted on the package face-up or face-down (flip chip).

  The fluorescent member 22 includes at least a phosphor and a filler made of, for example, a silicone resin. Instead of the fluorescent member 22 containing a phosphor, an enclosing member containing either a scattering agent or a thixo material may be used. The semiconductor light emitting element may be realized by the enclosing member and the LED chip 21. When the fluorescent member 22 contains a phosphor, one type is selected depending on the correlated color temperature of the light emitted from the light emitting device 1 and whether the LED chip 21 is a purple LED chip or a blue LED chip. Or a mixture of a plurality of types of phosphors. Specifically, when the LED chip 21 is a purple LED chip, for example, the blue phosphor, the red phosphor, the green phosphor, and the yellow phosphor correspond to the correlated color temperature of light emitted from the light emitting device 1. It is mixed in proportion and included in the fluorescent member 22. In addition, when the LED chip 21 is a blue LED chip, for example, a red phosphor, a green phosphor, and a yellow phosphor are mixed at a ratio corresponding to the correlated color temperature of light emitted from the light emitting device 1 to be a fluorescent member. 22.

  Examples of the phosphor used are described below. These phosphors are examples of suitable phosphors in the present embodiment, but applicable phosphors are not limited to the following, and various types can be used without departing from the gist of the present invention. It is possible to apply these phosphors and combinations of these phosphors.

(Red phosphor)
When a red phosphor is used, it contains a crystal phase having a chemical composition represented by the following formula [1], and the ratio of Mn to the total number of moles of M4 and Mn is 0.1 mol% or more and 40 mol%. The following phosphors may be used.
M ¹ ₂ M ⁴ F ₆ : R (1)
(In Formula [1], M ¹ contains one or more elements selected from the group consisting of K and Na, M ⁴ is a metal element containing Si, and R is an attachment containing at least Mn. Represents an active element.)

In the above formula [1], M ¹ contains an element selected from the group consisting of potassium (K) and sodium (Na). Any one of these elements may be contained alone, or two of them may be contained in any ratio. In addition to the above, as long as the performance is not affected, an alkali metal element such as Li, Rb, Cs, or (NH 4) may be partially contained. Li, Rb, Cs, 10 mol% or less relative to the normal total M ¹ weight content of the (NH4).

Of these, M ¹ preferably contains at least K. Usually, K is accounted for more than 90 mol% based on the total M ¹ amount, a case preferably account for more than 97 mol%, more preferably if the account for at least 98 mol%, more preferably at least 99 mol% It is particularly preferable to use only K.

In the above formula [1], M ⁴ contains at least Si. Usually, Si accounts for 90 mol% or more, preferably 97 mol% or more, more preferably 98 mol% or more, and more preferably 99 mol% or more, based on the total amount of M ^4. It is particularly preferable to use only Si. That is, the phosphor containing a crystal phase having a chemical composition represented by the formula [1] particularly preferably contains a crystal phase having a chemical composition represented by the following formula [2].
M ¹ ₂ SiF ₆ : R ... [2]
(In Formula [2], M ¹ contains one or more elements selected from the group consisting of K and Na, and R represents an activation element containing at least Mn.)

In the above formula [1], elements that may be contained in addition to Si as M ⁴ are Ti, Zr, Ge, Sn, Al, Ga, B, In, Nb, Mo, Zn, Ta, W 1 type, or 2 types or more selected from the group consisting of, Re, and Mg.

  In the above formulas [1] and [2], R is an activator element containing at least Mn, and as the activator element that may be contained in addition to Mn as R, Cr, Fe, Co, Ni, 1 type, or 2 or more types chosen from the group which consists of Cu, Ru, and Ag is mentioned.

  R preferably contains 90 mol% or more of Mn relative to the total amount of R, more preferably 95 mol% or more, particularly preferably 98 mol% or more, and particularly preferably contains only Mn.

When a red phosphor is used, the ratio of Mn to the total number of moles of M ⁴ and Mn (in the present invention, this ratio is hereinafter referred to as “Mn concentration”) is 0.1 mol% or more and 40 mol% or less. It may be a phosphor. If this Mn concentration is too low, the absorption efficiency of the excitation light by the phosphor will be low, so the luminance tends to decrease. If it is too high, the absorption efficiency will be high, but the internal quantum efficiency and luminance will decrease due to concentration quenching. Tend to. The lower limit of the Mn concentration is more preferably 0.4 mol% or more, further preferably 1 mol% or more, and particularly preferably 2 mol% or more. Further, the upper limit of the Mn concentration is more preferably 20 mol% or less, further preferably 8 mol% or less, and particularly preferably 6 mol% or less.

A red phosphor having an emission peak wavelength of usually 570 nm or more, preferably 580 nm or more, more preferably 585 nm or more, and usually 780 nm or less, preferably 700 nm or less, more preferably 680 nm or less is suitable. It is. Among them, as the red phosphor, for example, (Ca, Sr, Ba) AlSi (N, O) ₃ : Eu, (Sr, Ba) ₃ SiO ₅ : Eu, SrAlSi ₄ N ₇ : Eu, (La, Y) ₂ O ₂ S: Eu, K ₂ SiF ₆ : Mn are preferred, (Sr, Ca) AlSi (N, O) ₃ : Eu, SrAlSi ₄ N ₇ : Eu, (La, Y) ₂ O ₂ S: Eu, K ₂ SiF ₆ : Mn is more preferable, and K ₂ SiF ₆ : Mn satisfying the above formulas [1] and [2] is particularly preferable.

(Green phosphor)
When a green phosphor is used, the emission peak wavelength is usually 500 nm or more, preferably 510 nm or more, more preferably 515 nm or more, and usually 550 nm or less, preferably 542 nm or less, more preferably 535 nm or less. A green phosphor in the range is preferably used. Among them, as the green phosphor, for example, CaSc ₂ O ₄ : Ce, Ca ₃ (Sc, Mg) ₂ Si ₃ O ₁₂ : Ce, (Si, Al) ₆ (O, N) ₈ : Eu (β-sialon) ), (Ba, Sr) ₃ Si ₆ O ₁₂ N ₂ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, Mn are preferable.

(Yellow phosphor)
When a yellow phosphor portion is used, the emission peak wavelength is usually 530 nm or more, preferably 540 nm or more, more preferably 550 nm or more, and usually 620 nm or less, preferably 600 nm or less, more preferably 580 nm or less. It is preferable to use a yellow phosphor in the wavelength range. Among them, as a yellow phosphor, for _{example, Y 3 Al 5 O 12:} Ce, (Y, Gd) 3 Al 5 O 12: Ce, (Sr, Ca, Ba, Mg) 2 SiO 4: Eu, (Ca, Sr) Si ₂ N ₂ O ₂ : Eu (α-sialon), La ₃ Si ₆ N ₁₁ : Ce (however, a part thereof may be substituted with Ca or O) are preferred.

(Blue phosphor)
When a blue phosphor is used, the emission peak wavelength is usually 420 nm or more, preferably 430 nm or more, more preferably 440 nm or more, and usually less than 500 nm, preferably 490 nm or less, more preferably 480 nm or less, More preferably, a blue phosphor having a wavelength range of 470 nm or less, particularly preferably 460 nm or less, is used. Among them, as a blue phosphor, for example, (Ca, Sr, Ba) MgAl 10 O 17: Eu, (Ca, Sr, Ba) 10 (PO 4) 6 (Cl, F) 2: Eu is preferred.

(Heat dissipation member)
On the lower surface 5b of the metal base substrate 5, the position corresponding to the position where the light emitting unit 2 is installed on the upper surface 5a (specifically, for example, the position behind the position where the light emitting unit 2 is installed on the upper surface 5a). A heat radiating member 30 for dissipating the heat generated by the light emitting unit 2 is fixed to the head. FIG. 4 is a schematic perspective view showing the configuration of the heat dissipation member 30. 2 and FIG. 4 is a heat sink provided with a plurality of fins 31. The heat generated by the light emitting unit 2 is transmitted to the heat radiating member 30 through the metal base substrate 5. And the fin 31 of the heat radiating member 30 dissipates the transmitted heat. Therefore, in the light emitting unit 2, the temperature rise due to the heat generated by the light emitting unit 2 (more specifically, the LED chip 21) can be satisfactorily suppressed. The heat radiating member 30 may be fixed to the lower surface 5b of the metal base substrate 5 with a conductive adhesive having a higher thermal conductivity than the insulating adhesive. In the example shown in FIGS. 2 and 4, the fins 31 are provided on the heat dissipation member 30, but the fins 31 may not be provided. Moreover, the shape of the fin 31 shown in FIG. 2 and FIG. 4 is an example, and can be appropriately set according to necessary heat dissipation characteristics, installation conditions, and the like. A fan for heat dissipation may be installed.

(Glass epoxy base material)
As shown in FIG. 2, a glass epoxy base material 7 is bonded to the upper surface 5 a of the metal base substrate 5. The glass epoxy base material 7 is provided with an opening 7k that has a size corresponding to the outer peripheral shape of the cylindrical reflecting member 3 and reaches the upper surface 5a of the metal base substrate 5. On the upper surface 5a of the metal base substrate 5, the reflecting member 3 is installed in the region 5a1 that is in the opening 7k of the glass epoxy base material 7, and the region 5a2 outside the region in which the reflecting member 3 is installed is glass epoxy. Covered by the substrate 7.

  Further, as shown in FIG. 2, on the upper surface 7 a of the glass epoxy substrate 7, an anode-side power supply terminal 9 a connected to the anode-side connection terminal 21 a of the LED chip 21 via the electric wire 8 a, and the LED chip 21 The cathode side power supply terminal 9b connected to the cathode side connection terminal 21b via the electric wire 8b is provided. The LED chip 21 of the light emitting unit 2 is connected to the anode side power supply terminal 9a and the cathode side power supply terminal 9b. A wiring pattern (not shown) for supplying power is formed. For example, an external wiring connected to a commercial power source is connected to the wiring pattern, and power is supplied through the external wiring. The anode side connection terminal and the cathode side connection terminal are collectively referred to as a set of connection terminals. Moreover, the electric wire which connects an anode side connection terminal and an anode side power supply terminal, and the electric wire which connects a cathode side connection terminal and a cathode side power supply terminal are named generically, and it is also called 1 set of electric wires. The anode side power supply terminal and the cathode side power supply terminal are collectively referred to as a pair of power supply terminals. Therefore, on the upper surface 7a of the glass epoxy substrate 7, a set of power supply terminals 9a and 9b connected to the set of connection terminals 21a and 21b of the LED chip 21 is provided. The set of connection terminals 21a, 21b and a set of power supply terminals 9a, 9b are connected by a set of electric wires 8a, 8b, respectively. In addition, each electric wire 8a, 8b and each electric power supply terminal 9a, 9b are each comprised with gold | metal | money, for example.

  As shown in FIG. 2, the lower surface 7 b of the glass epoxy base material 7 is in contact with the upper surface 5 a of the metal base substrate 5. Further, on the upper surface 7 a of the glass epoxy base material 7, the peripheral region 7 a 1 of the reflecting member 3 including the region where the anode side power supply terminal 9 a and the cathode side power supply terminal 9 b are provided is covered with the resin body 4. Yes. On the upper surface 7a of the glass epoxy substrate 7, a region 7a2 that is a region other than the region 7a1 is covered with an insulating resin 10 for protecting the wiring pattern formed in the region 7a2. As the insulating resin 10, a material selected from white ink, a composite resin containing a filler in the resin, or the like may be used. For example, in order to improve the light reflectivity and improve the light extraction efficiency of the light emitting part 2, a white pigment such as alumina powder, silica powder, magnesium oxide, titanium oxide and the like, and an insulating silicone resin should be used. Is preferred.

(Reflective member)
FIG. 5 is a schematic perspective view showing the reflecting member 3. As shown in FIG. 5, the reflecting member 3 is provided with a set of notches 3ka and 3kb. The notches 3ka and 3kb are notches formed on the peripheral wall of the reflecting member 3 from the end surface 3b toward the end surface 3c. The reflecting member 3 is formed so that the widths of the notches 3ka and 3kb are at least twice the diameter of the electric wires 8a and 8b. In the example shown in FIG. 5, the peripheral wall of the reflecting member 3 is cut out in a curved shape to form the cutout portions 3 ka and 3 kb, but at least one portion of the peripheral wall of the reflecting member 3 is cut out in a rectangular shape. Cutout portions 3ka and 3kb may be formed. That is, the shape of the notches 3ka and 3kb can be changed as appropriate.

  An example of a manufacturing process constituting the positional relationship between the resin body 4 and the fluorescent member 22 in the notches 3ka and 3kb will be described. First, when the resin body 4 is disposed on the outer periphery of the reflecting member 3, a part of the resin body 4 enters the notches 3ka and 3kb. Next, when the fluorescent member 22 is filled into the cylinder of the reflecting member 3, the fluorescent member 22 enters the portion where the resin body 4 does not enter in the notches 3ka and 3kb. Therefore, in the example shown in FIG. 2, the notches 3ka and 3kb are closed by the fluorescent member 22 and the resin body 4, and the lower portion of the notches 3ka and 3kb has a wider range than the upper portion. The upper part is covered with the fluorescent member 22 in a wider range than the lower part.

  As shown in FIGS. 1 and 2, the electric wire 8a passes through the notch 3ka. Moreover, the electric wire 8b passes through the notch 3kb. Moreover, as shown in FIG. 1 and FIG. 2, the notches 3ka and 3kb are closed by the fluorescent member 22 and the resin body 4, respectively. And the part which passes through notch part 3ka, 3kb among the full length of each electric wire 8a, 8b is each supported by the fluorescent member 22 and the resin body 4 so that the reflecting member 3 may not be contacted. Further, at least a portion of the electric wires 8 a and 8 b outside the reflecting member 3 is supported and protected by the resin body 4. In the example shown in FIG. 2, the notches 3ka and 3kb are blocked by the fluorescent member 22 and the resin body 4 from the upper surface 5a of the metal base substrate 5 to a position lower than the height of the end surface 3b. However, the entire region of the notches 3ka and 3kb may be closed by the fluorescent member 22 and the resin body 4.

(Resin body)
The resin body 4 is made of a resin having a higher light reflectance than gold, and is, for example, a white silicone resin that reflects light. As described above, the power supply terminals 9a and 9b and the electric wires 8a and 8b are made of gold, but at least a portion of the entire length of the electric wires 8a and 8b outside the reflecting member 3 and the power supply terminals 9a and 9b are The resin body 4 has a higher light reflectance than gold.

  As described above, the light emitting device 1 is configured so that the fluorescent member 22 and the resin body 4 having a higher light reflectance than gold block the cutout portions 3ka and 3kb, so that the cutout portions 3ka and 3kb are formed. The light in the direction of passing through the outside of the cylinder of the reflecting member 3 is reflected by the resin body 4 and returned to the cylinder. As the resin body 4, a material selected from a composite resin containing a filler in the resin may be used. For example, in order to improve the light reflectivity and improve the light extraction efficiency of the light emitting section 2, it is preferable to use a silicone resin containing a white pigment such as alumina powder, silica powder, magnesium oxide, titanium oxide or the like.

(Modification)
FIG. 6 is a schematic top view showing the configuration of a modification of the light emitting device 1. Although the light emitting device 1 of the example described above has one LED chip, the light emitting device 1 of the present modification has two LED chips. In addition, the light emitting device 1 of the present modification includes a reflective member 13 instead of the reflective member 3.

  The light-emitting device 1 shown in FIG. 1 and FIG. 2 described above corresponds to one LED chip 21, one set of notches 3ka and 3kb, one set of connection terminals 21a and 21b, and one set of electric wires 8a and 8b. And a set of power supply terminals 9a and 9b.

  On the other hand, the light emitting device 1 of this modification shown in FIG. 6 corresponds to one LED chip 21-1, one set of notches 3kc, 3kd, one set of connection terminals 21c, 21d, one set. Electric wires 8c and 8d and a pair of power supply terminals 9c and 9d are provided. 6 corresponds to one LED chip 21-2, one set of notches 3ke and 3kf, one set of connection terminals 21e and 21f, and one set of electric wires. 8e, 8f and a set of power supply terminals 9e, 9f are provided.

  Therefore, the light-emitting device 1 of this modification shown in FIG. 6 corresponds to the two LED chips 21-1 and 21-2, and includes two sets of notches 3kc, 3kd, 3ke, 3kf, and two sets of connection terminals. 21c, 21d, 21e, 21f, two sets of electric wires 8c, 8d, 8e, 8f, and two sets of power supply terminals 9c, 9d, 9e, 9f are provided. Therefore, the reflection member 13 of this modification is provided with two sets of cutout portions 3kc, 3kd, 3ke, and 3kf.

  In the configuration of the light emitting device 1 according to this modification, the same configurations as those in the light emitting device 1 shown in FIGS. 1 and 2 are denoted by the same reference numerals as those in FIGS.

  FIG. 7 is a schematic perspective view showing the reflecting member 13 of this modification. As shown in FIG. 7, the reflecting member 13 of this modification is provided with two sets of notches 3kc, 3kd, 3ke, 3kf. The cutout portions 3kc, 3kd, 3ke, and 3kf are cutouts from the end surface 3b toward the end surface 3c on the peripheral wall of the reflecting member 13. In the example shown in FIG. 5, the peripheral wall of the reflection member 13 is cut out in a curved shape to form the cutout portions 3 kc, 3 kd, 3 ke, and 3 kf. Cutout portions 3kc, 3kd, 3ke, and 3kf may be formed by cutting. That is, the shape of the notches 3kc, 3kd, 3ke, 3kf can be changed as appropriate.

  As shown in FIG. 6, the electric wire 8c passes through the notch 3kc. Moreover, the electric wire 8d passes through the notch 3kd. The electric wire 8e passes through the notch 3ke. Moreover, the electric wire 8f passes through the notch 3kf. Further, as shown in FIG. 6, the notches 3kc, 3kd, 3kc, and 3kd are closed by the fluorescent member 22 and the resin body 4, respectively. As in the example shown in FIG. 2, the notches 3kc, 3kd, 3ke, 3kf may be blocked by the fluorescent member 22 and the resin body 4 to a position lower than the height of the end surface 3b. The entire region of the notches 3kc, 3kd, 3ke, 3kf may be blocked by the fluorescent member 22 and the resin body 4.

[Second Embodiment]
FIG. 8 is a schematic top view illustrating a configuration example of the light emitting device 100 according to the second embodiment of the present invention. FIG. 9 is a schematic cross-sectional view showing a configuration example of the light emitting device 100 according to the second embodiment of the present invention. FIG. 9 shows a cross section taken along line IX-IX in FIG. In the light emitting device 1 according to the first embodiment shown in FIGS. 1 and 2, the electric wires 8 a and 8 b are configured to pass through the notches 3 ka and 3 kb provided in the reflecting member 3. On the other hand, in the light emitting device 100 of the second embodiment shown in FIGS. 8 and 9, the reflecting member 3 is not provided with a notch, and the electric wires 8 a and 8 b are located above the end surface 3 b of the reflecting member 3. pass.

  In the configuration of the light emitting device 100 of the present embodiment, the same configuration as the configuration of the light emitting device 1 of the first embodiment is denoted by the same reference numerals as those in FIG. 1 and FIG. In the present embodiment, the light emitting device 100 including the heat radiating member 30 and an external wiring (not shown) constitute a lighting fixture.

  The light emitting unit 2 is installed on the upper surface 5a on the metal base substrate 5 on which high reflection processing is performed, similarly to the configuration in the first embodiment. Similar to the configuration of the reflecting member 3 in the first embodiment, the reflecting member 23 is formed in a cylindrical shape, and at least the inner wall 3a and one end surface 3b are subjected to high reflection processing. And the reflection member 23 has the other end surface 3c installed on the upper surface 5a of the metal base substrate 5 so that the inner wall 3a surrounds the periphery of the light emitting section 2 in the same manner as the configuration of the reflection member 3 in the first embodiment. .

  The glass epoxy base material 7 is joined to the upper surface 5a of the metal base substrate 5 similarly to the structure in 1st Embodiment. The glass epoxy base material 7 is provided with an opening 7k having a size corresponding to the outer peripheral shape of the cylindrical reflecting member 23, similarly to the configuration in the first embodiment. On the upper surface 5a of the metal base substrate 5, a reflective member 23 is installed in a region 5a1 in the opening 7k of the glass epoxy base material 7, and a region 5a2 outside the region where the reflective member 23 is installed is a glass epoxy group. It is covered with a material 7.

  On the upper surface 7a of the glass epoxy substrate 7, as in the configuration in the first embodiment, the anode side power supply terminal 9a connected to the anode side connection terminal 21a of the LED chip 21 via the electric wire 8a, and the LED chip 21 And a cathode side power supply terminal 9b connected to the cathode side connection terminal 21b via the electric wire 8b.

  The lower surface 7 b of the glass epoxy substrate 7 is in contact with the upper surface 5 a of the metal base substrate 5. Further, the region excluding the anode side power supply terminal 9 a and the cathode side power supply terminal 9 b on the upper surface 7 a of the glass epoxy base material 7 is covered with the insulating resin 10.

  FIG. 10 is a schematic perspective view showing the reflecting member 23 of the second embodiment. As shown in FIG. 10, unlike the reflecting member 3 of 1st Embodiment shown in FIG. 5 or FIG. 7, the reflecting member 23 of 2nd Embodiment is not provided with the notch part.

  As shown in FIG. 9, the electric wires 8 a and 8 b pass above the end surface 3 b of the reflecting member 23. In the present embodiment, the resin body 4 is formed so as to surround the reflecting member 23 up to a position higher than the height from the upper surface 5 a of the metal base substrate 5 to the end surface 3 b of the reflecting member 23. The fluorescent member 22 of the light emitting unit 2 is located at a position higher than the height from the upper surface 5a of the metal base substrate 5 to the end surface 3b of the reflective member 23 and lower than the top of the resin body 4. The region surrounded by the cylinder and the resin body 4 is filled.

  The example of the manufacturing process which comprises the positional relationship of the resin body 4 and the fluorescent member 22 in this embodiment is demonstrated. First, the resin body 4 is disposed on the outer periphery of the reflecting member 23 and the outer region on the end surface 3b. Next, the fluorescent member 22 is surrounded by the resin body 4 in the region surrounded by the resin body 4 disposed in the cylinder and on the end surface 3b of the reflecting member 23, that is, in the cylinder and on the end surface 3b of the reflecting member 23. The inner area is filled. Therefore, in the example shown in FIG. 9, the upper end surface 3 b of the reflecting member 23 is covered with the fluorescent member 22 and the resin body 4.

  As shown in FIG. 9, the electric wires 8 a and 8 b are supported above the end surface 3 b of the reflecting member 23 so as not to contact the reflecting member 23 by the fluorescent member 22 and the resin body 4. The electric wires 8a and 8b are covered and protected by the fluorescent member 22 and the resin body 4.

  According to the present embodiment, instead of providing the notch in the reflecting member 23 for the purpose of facilitating the connection between the power supply terminals 9a, 9b and the connection terminals 21a, 21b by the electric wires 8a, 8b, the metal base Even if the height from the upper surface 5a of the substrate 5 to the end surface 3b of the reflecting member 23 is lowered, the diffusion of light emitted from the light emitting portion 2 by the resin body 4 can be satisfactorily suppressed. Then, when a lens is provided in the opening direction of the reflecting member 23, the light emitted by the light emitting unit 2 can be incident on the lens at a high rate.

  Further, according to the present embodiment, the electric wires 8 a and 8 b can be protected by the fluorescent member 22 and the resin body 4.

  In the first embodiment, both the electric wires 8a and 8b pass through the notch, and in the second embodiment, both the electric wires 8a and 8b pass above the end surface 3b of the reflecting member 23. However, a notch is provided in the reflecting member so that one of the electric wires 8a and 8b passes, the one electric wire passes through the notch, and the other electric wire passes above the reflecting member. It may be configured to.

  The height of the resin body 4 is not limited to the height of the light emitting device 1 of the first embodiment shown in FIG. 2 or the height of the light emitting device 100 of the second embodiment shown in FIG. Specifically, in the light emitting device 1 of the first embodiment shown in FIG. 2, the resin body 4 is disposed on the outer periphery of the reflecting member 3 at a height lower than the height of the end surface 3 b of the reflecting member 3. For example, the resin body 4 may be disposed on the outer periphery of the reflecting member 3 at a height higher than the height of the end surface 3 b of the reflecting member 3.

  For example, the ratio of the height from the upper surface 5a of the substrate 5 to the top of the resin body 4 and the height from the upper surface 5a of the substrate 5 to the end surface 3b of the reflecting member 3 is, for example, 2: 1. (That is, as compared with the example shown in FIG. 9, the height of the reflective member 3 may be low and the resin body 4 may be configured to surround the fluorescent member 22), for example, 10: 9 (that is, compared to the example shown in FIG. 9, the height of the reflecting member 3 is high and the proportion of the resin body 4 surrounding the fluorescent member 22 is low). May be) That is, if the fluorescent member 22 is surrounded by the reflecting member 3 and the resin body 4, the height from the upper surface 5 a of the substrate 5 to the top of the resin body 4 and from the upper surface 5 a of the substrate 5 to the end surface 3 b of the reflecting member 3. The ratio to the height may be any ratio. According to such a configuration, the height of the reflecting member 3 and the amount of the resin body 4 can be adjusted according to the amount of the fluorescent member 22.

DESCRIPTION OF SYMBOLS 1,100 Light-emitting device 2 Light-emitting part 3,13,23 Reflective member 3a Inner wall 3b, 3c End part 3ka, 3kb, 3kc, 3kd, 3ke, 3kf Notch part 4 Resin material 5 Metal base substrate 5a Upper surface 5a1, 5a2 Area | region 5b Lower surface 6 Die bond agent 7 Glass epoxy base material 7a Upper surface 7a1, 7a2 region 7b Lower surface 7k Opening 8a, 8b, 8c, 8d, 8e, 8f Electric wire 9a Anode side power supply terminal 9b Cathode side power supply terminal 9c, 9d, 9e, 9f Power supply terminal 10 Insulating resin 21, 21-1, 21-2 LED chip 21a Anode side connection terminal 21b Cathode side connection terminal 21c, 21d, 21e, 21f Connection terminal 22 Fluorescent member 30 Heat radiation member 31 Fin

Claims (16)

A substrate,
A semiconductor light emitting device disposed on the substrate;
A cylindrical reflecting member disposed on the substrate and surrounding the semiconductor light emitting element;
A resin body surrounding the reflection member,
The cylindrical reflection member and the resin body reflect at least a part of light emitted by the semiconductor light emitting element and radiate it in an opening direction. The said resin body is formed so that the said reflection member may be enclosed to the height higher than the height from the position which contact | connects the surface of the said board | substrate in the said reflection member to an opening edge part. Light emitting device. A notch that is a gap formed from the opening end of the reflecting member toward the substrate;
An electric wire connected to a predetermined electrical connection terminal through the notch from the semiconductor light emitting element,
The light emitting device according to claim 1, wherein the resin body is formed so as to close a gap formed by the notch in the reflecting member. As the electrical connection terminal, a first terminal and a second terminal are formed,
As the electric wire, the first electric wire connecting the semiconductor light emitting element and the first terminal, and the second electric wire connecting the semiconductor light emitting element and the second terminal,
The first notch part through which the first electric wire passes and the second notch part through which the second electric wire passes are provided as the notch parts, respectively. Light emitting device. A plurality of semiconductor light emitting elements are arranged in a region surrounded by the reflecting member on the substrate,
A first terminal and a second terminal corresponding to each semiconductor light emitting element are formed as the electrical connection terminals, respectively.
As the electric wires, respectively, a first electric wire that connects the first terminals corresponding to the semiconductor light emitting elements, and a second electric wire that connects the second terminals corresponding to the semiconductor light emitting elements, respectively.
The said notch part is provided with the 1st notch part through which each said 1st electric wire passes, and the 2nd notch part through which each said 2nd electric wire passes, respectively. The light emitting device described. The light emitting device according to claim 1, further comprising an electric wire connected to a predetermined electrical connection terminal across the reflective member from the semiconductor light emitting element. A sealing material that fills a region surrounded by the reflecting member and covers the semiconductor light emitting element;
The light emitting device according to claim 3, wherein the electric wire is covered with the sealing material and the resin body. The light emitting device according to claim 7, wherein the sealing material is filled in a region surrounded by the reflective member and the resin body. The light emitting device according to claim 7, wherein the sealing material includes at least one of a phosphor, a scattering agent, and a thixotropic agent. The light emitting device according to any one of claims 1 to 9, wherein the resin body includes a reflective material that reflects light. The light emitting device according to any one of claims 1 to 10, wherein the substrate is a metal plate. The light emitting device according to claim 11, wherein the metal plate and the reflection member are subjected to high reflection processing and reflect light at a higher rate than when the high reflection processing is not performed. An insulating layer covering at least a part of a region outside the reflecting member on a surface of the substrate on which the reflecting member is installed;
An insulating resin that is formed on the insulating layer and covers electrical wiring formed on the insulating layer;
The light-emitting device according to any one of claims 1 to 12, wherein the insulating resin includes a reflective material that reflects light. The light emitting device according to any one of claims 1 to 13, wherein a peak wavelength of light emitted from the semiconductor light emitting element is 380 nm or more and 420 nm or less. The heat dissipation member fixed to the position corresponding to the position where the said semiconductor light-emitting device is arrange | positioned in the surface on the opposite side to the surface where the said semiconductor light-emitting device is arrange | positioned of the said board | substrate is provided. The light emitting device according to claim 14.   A lighting fixture comprising the light emitting device according to any one of claims 1 to 15.

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